DE102012206180B4 - Radiation detector, method for producing a radiation detector and X-ray machine - Google Patents

Abstract

Radiation detector (10) for converting X-rays into electrical signals, comprising at least one first and one second electrode (12a, 12b), between which at least one scintillator element for converting X-rays into light pulses and at least one photoconductor (20) for converting light pulses into electrical ones Signals are arranged, characterized in that the radiation detector (10) comprises at least one between the first and the second electrode (12a, 12b) extending scintillator layer (14), wherein within the scintillator layer (14) at least one between the first and the second electrode (12a, 12b) extending cavity (18a-c) is provided, in which at least one photoconductor (20) is arranged.

Description

The invention relates to a radiation detector for the conversion of X-radiation into electrical signals. The invention further relates to a method for producing a radiation detector and to an x-ray device having such a radiation detector.

A radiation detector is for example from the DE 10 2008 029 782 A1 and comprises a layer of an organic photoconductor in which nanocrystalline scintillator particles of high packing density are incorporated for the absorption of X-rays. These scintillator particles absorb X-ray quanta and emit photons of the visible electromagnetic spectrum, which are absorbed in the organic photoconductor where they generate charge carriers (electrons and holes). The charge carriers can then be registered as current by applying an electric field via two electrodes of the radiation detector.

From the DE 103 13 602 A1 is a device for measuring a radiation dose, in particular an X-ray dose to take. The device absorbs radiation and provides an absorbance-dependent output signal representative of the dose, having at least one absorption structure of thin-film layers superimposed on a sheet-like support. The thin film layers comprise at least one output signal-providing thin-film diode structure.

From the US 2007/0272872 A1 For example, an X-ray detector is known which comprises one or more needle or columnar photoconductors present in a scintillator material.

Furthermore, radiation detectors are known which comprise scintillator bodies, which are formed as a powder layer, monocrystal or polycrystalline ceramic and are optically coupled to a layer of a photodetector such as a photodiode or a photomultiplier (photomultiplier).

Object of the present invention is to provide a radiation detector, which is inexpensive to produce and has a particularly long life. Another object of the invention is to provide an X-ray machine with such a radiation detector.

The objects are achieved by a radiation detector with the features of claim 1, by a method having the features of claim 12 and by an X-ray apparatus according to claim 18. Advantageous embodiments with expedient developments of the invention are specified in the respective subclaims.

A first aspect of the invention relates to a radiation detector for converting X-radiation into electrical signals, wherein it is provided according to the invention that the radiation detector comprises at least one scintillator layer extending between the first and second electrodes, at least one between the first and the second inside the scintillator layer second electrode extending cavity is provided, in which at least one photoconductor is arranged. In other words, in contrast to the prior art, it is provided that the scintillator element does not consist of nanoscale particles, but extends as a macroscopic scintillator between the electrodes, wherein in the scintillator one or more cavities are included, which are also between the electrodes extend. In the one or more cavities of the photoconductor, that is, a photoconductive compound or a photoconductive compound mixture is introduced, so that on the one hand, the required implementation of the scintillator layer generated photons in charge carriers directly, ie close to the origin, and on the other hand, the charge transport to the electrodes near the genesis the photoconductors arranged in the cavity or cavities can take place. The geometry of the cavity or cavities can basically be chosen freely. For example, the cavity may be channel-shaped or flat. In contrast to radiation detectors with nanoscale scintillator particles, the radiation detector according to the invention has no limitation of the packing density, so that higher layer thicknesses with correspondingly improved X-ray absorption are made possible. In addition, the charge transport can be perpendicular or at least substantially perpendicular to the electrodes, so that short transport paths and a correspondingly better time response of the radiation detector are given. Therefore, in principle, comparatively less expensive photoconductors can be used. Furthermore, a wide variety of scintillator materials can be used and easily processed to scintillator, so that the radiation detector according to the invention is particularly fast and inexpensive to produce. Furthermore, in contrast to the prior art, there is no risk that nanoscale scintillator particles change their arrangement between the electrodes by sedimentation or coagulation and thus also the detector properties. In addition, fundamental problems of nanoparticles such as an increased due to the large surface specific chemical reactivity and a poorly controlled spatial distributability with appropriate Unevenness of the structure and detector properties avoided from the outset. The scintillator layer of the radiation detector according to the invention has a high chemical and mechanical stability and thus a particularly long service life. In this case, the scintillator layer of the radiation detector according to the invention can be produced with low layer thicknesses or high packing densities with simultaneously high structural precision and creative freedom (design).

In an advantageous embodiment of the invention, it is provided that the scintillator layer comprises at least two scintillator bodies spaced apart from one another, between which at least one photoconductor is arranged in each case. In other words, it is provided that the scintillator layer comprises two or more scintillator bodies, between each of which one of the extending between the first and the second electrode cavity is arranged, wherein the cavity with the photoconductor, that is with the photoconductive compound or photoconductive compound mixture is filled. As a result, the radiation detector according to the invention can be designed to be particularly variable, since the number of Szintillatorkörper and photoconductor layers can be optimally adapted to the particular application. In principle, it may be provided that the radiation detector comprises n scintillator bodies and n-1 photoconductor layers, where n ≥ 2.

Further advantages result if the at least two scintillator bodies and the at least one photoconductor are arranged in the manner of a lamella between the first and the second electrode. In this case, a lamellar arrangement means an arrangement in which the scintillator body and the photoconductor layer (s) have at least substantially disc-shaped or cuboid geometries and are arranged at least approximately parallel to one another with their surfaces, the edges and cover surfaces the individual discs or cuboid are each in communication with the electrodes. Such lamellar structures have a very large surface measured on the cost of materials and a particularly high mechanical stability.

A further improvement of the mechanical stability is achieved in a further embodiment of the invention in that adjacent scintillator bodies are supported on each other.

It has been shown in a further embodiment to be advantageous if adjacent Szintillatorkörper be supported by means of a plurality of material bridges to each other, wherein the material bridges preferably have a distance between 5 microns and 15 microns from each other. The material bridges can basically consist of the same material as the scintillator body or of a different material. The use of material bridges offers the advantage that, on the one hand, the cavity or cavities for the photoconductor between adjacent scintillator bodies are at least predominantly retained and, on the other hand, the mechanical stability can be increased. Distances of 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm and 15 μm as well as corresponding intermediate values are particularly suitable at a distance between 5 μm and 15 μm understand.

In a further advantageous embodiment of the invention, it is provided that the scintillator layer comprises a single crystal and / or a doped and / or undoped ceramic material. Suitable ceramic materials include, for example, (Y. Gd) ₂ O ₃ , Y ₃ Al ₅ O ₁₂ and Lu ₂ SiO ₅ , which compounds may be doped with lanthanides such as europium, praseodymium, cerium. Also conceivable are ceramic materials of Lu-Tb-Al-O-Ce systems, Y-Gd-Eu-O-Pr systems, Lu-Tb-Al-O: Ce compounds, Y ₂ O ₃ -Gd ₂ O ₃ -Eu ₂ O ₃ mixtures, Gd ₂ O ₃ -Ga ₂ O ₃ : Cr, Gd ₂ O ₂ S: Pr / Ce, (Lu _x Tb _y ) ₃ Al ₅ O ₁₂ : Ce, CsI: Tl, CsI: Na and CdWO ₄ . As a result, the properties of the scintillator body can be optimally adapted to the respective intended use, in particular with regard to its absorption and emission behavior.

In a further advantageous embodiment of the invention it is provided that the photoconductor comprises an inorganic and / or organic electron acceptor compound and / or an inorganic and / or organic electron donor compound. This is a simple way to optimally adapt the absorption and emission properties of the photoconductor to the particular intended use of the radiation detector and to the properties of the scintillator body as well as to the material of the electrodes. For example, it may be provided that the photoconductor comprises inorganic compounds such as amorphous selenium, cadmium telluride (CdTe), cadmium zinc telluride (CdZnTe) and / or bismuth triiodide (BiI ₃ ). Alternatively or additionally, it may be provided that the photoconductor comprises an electrically conductive polymer, wherein the one or more electrically conductive polymers may additionally also be p-doped and / or n-doped.

Furthermore, it has proved to be advantageous if the photoconductor is selected from a group comprising substituted and / or unsubstituted fullerenes, polyacetylenes, poly (paraphenylenes), polyphenylenevinylenes, polythiophenes, polyethylenedioxythiophenes, polyanilines, polysulfonic acids, polysilanes, polycarbazoles and / or polypyrroles , The group members mentioned may additionally be p-doped and / or n-doped. Exemplary compounds for said group members are [6,6] -phenyl-C61-butyric acid methyl ester (PCBM), which is an n-type semiconductor or an electron acceptor material, poly (3-hexylthiophene) (P3HT), in which it is a p-type semiconductor, poly-3,4-ethylenedioxythiophene (PEDOT), polystyrene sulfonate (PSS), poly (1,4-phenylene) (PPP), poly (p-phenylene vinylene) (PPV), poly ( 2- (2-ethylhexyloxy) -5-methoxy-p-phenylenevinylene) (MEH-PPV), the cyano derivative thereof (CN-PPV), polythiophene (PT), polypyrrole (PPy), polyaniline (PANI) or polyacetylenes, which can in principle have a trans-transoid and / or a cis-transoid or trans-cisoid configuration.

By selecting one or more compounds from the groups mentioned, important properties of the photoconductor such as, for example, its solubility, its absorption behavior, its emission wavelengths and its thermal and chemical stability can be optimally adjusted. For example, a polymer blend of PEDOT and / or P3HF, which act as absorbers or hole transport components, with PCBM as an electron acceptor function as a so-called "bulk heterojunction", that is to say that the charge carriers separate at the interfaces of the individual materials. A polymer blend is understood to mean a macroscopically homogeneous mixture of two or more types of polymer, which can be prepared, for example, by mechanical mixing of molten polymers, resulting in a homogeneous material. Upon cooling of the melt, the individual polymer chains remain finely divided and ensure that the property profile of the polymer blend is composed of the properties of the polymers used.

In a further advantageous embodiment of the invention, it is provided that the first electrode and the second electrode consist of the same or different materials. In this way, in particular the discharge or entry work of the electrodes can be optimally adapted to the material of the scintillator body and / or of the photoconductor. Suitable materials for the electrodes are, for example, indium tin oxide (ITO), calcium or silver.

Further advantages result in that a distance between the first and the second electrode is between 80 μm and 2500 μm, in particular between 100 μm and 2000 μm. Distances between 80 μm and 90 μm, in particular distances of 80 μm, 90 μm, 110 μm, 130 μm, 150 μm, 170 μm, 190 μm, 210 μm, 230 μm, 250 μm, 270 μm, 290 μm, 310, 330, 350, 370, 390, 410, 430, 450, 470, 490, 510, 530, 550, 570, 590, 610, 630 , 650, 670, 690, 710, 730, 750, 770, 790, 810, 830, 850, 870, 890, 910, 930, 950, 970 μm, 990 μm, 1010 μm, 1030 μm, 1050 μm, 1070 μm, 1090 μm, 1110 μm, 1130 μm, 1150 μm, 1170 μm, 1190 μm, 1210 μm, 1230 μm, 1250 μm, 1270 μm, 1290 μm, 1310 μm, 1330 μm, 1350 μm, 1370 μm, 1390 μm, 1410 μm, 1430 μm, 1450 μm, 1470 μm, 1490 μm, 1510 μm, 1530 μm, 1550 μm, 1570 μm, 1590 μm, 1610 μm, 1630 μm , 1650, 1670, 1690, 1710, 1730, 1750, 1770, 1790, 1810, 1830, 1850, 1870, 1890, 1910, 1930, 1950, and 1970, respectively μm, 19 90 μm, 2010 μm, 2030 μm, 2050 μm, 2070 μm, 2090 μm, 2110 μm, 2130 μm, 2150 μm, 2170 μm, 2190 μm, 2210 μm, 2230 μm, 2250 μm, 2270 μm, 2290 μm, 2310 μm , 2330 μm, 2350 μm, 2370 μm, 2390 μm, 2410 μm, 2430 μm, 2450 μm, 2470 μm, 2490 μm and 2500 μm as well as corresponding intermediate values such as 100 μm, 101 μm, 102 μm, 103 μm, 104 μm, 105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 115, 116, 117, 118, 119, 120, and so on understand. As a result, in particular the sensitivity, absorption characteristics and mechanical stability of the radiation detector can be optimally adjusted. A particularly high sensitivity of the radiation detector is alternatively or additionally achieved in that the at least one photoconductor considered in the direction of extension of the electrodes has a width between 2 microns and 25 microns, in particular between 5 microns and 20 microns. Widths between 2 μm and 25 μm are widths of 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm , 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm and 25 μm as well as corresponding intermediate values.

A further optimization of the absorption behavior and the mechanical stability is achieved in a further embodiment of the invention in that the Szintillatorkörper viewed in the direction of extension of the electrodes have a width between 80 .mu.m and 250 .mu.m, in particular between 100 .mu.m and 200 .mu.m. Below a width of between 80 μm and 250 μm are widths of 80 μm, 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, 160 μm, 170 μm, 180 μm, 190 μm, 200 μm, 210 μm, 220 μm, 230 μm, 240 μm and 250 μm and corresponding intermediate values such as 100 μm, 101 μm, 102 μm, 103 μm, 104 μm, 105 μm, 106 μm, 107 μm, 108 μm, 109 μm , 110 microns, etc. to understand.

A second aspect of the invention relates to a method for producing a radiation detector for converting X-radiation into electrical signals, in which at least one scintillator element for converting X-radiation into light pulses and at least one photoconductor for converting light pulses into electrical signals be arranged between at least a first and a second electrode. In this case, it is provided according to the invention that at least one scintillator layer extending between the first and the second electrode is arranged between the first and the second electrode, wherein at least one cavity extending between the first and the second electrode is provided within the scintillator layer, in which at least a photoconductor is arranged. The resulting advantages are to be taken from the preceding descriptions of the first aspect of the invention, wherein advantageous embodiments of the first aspect of the invention are to be regarded as advantageous embodiments of the second aspect of the invention and vice versa.

In an advantageous embodiment of the invention, at least two green scintillator bodies made of a ceramic material are produced, stacked, laminated and sintered to form a scintillator layer for producing the scintillator layer. This allows a particularly simple and variable production of the radiation detector. Depending on the desired configuration and dimensioning of the scintillator layer can also be 3, 4, 5, 6 or more green, d. H. unsintered scintillator body can be used. Furthermore, it can be provided that scintillator bodies made of different materials are used. As a result, the absorption process of the radiation detector can be set particularly easily and precisely.

By using a ceramic film process, in particular film casting, the geometry of the individual Szintillatorkörper can be easily adjusted. In addition, this provides an easy way to produce by stacking different green sheets and individual Szintillatorkörper with particularly specific properties.

A further improvement in the mechanical stability of the scintillator layer is achieved in a further embodiment in that at least one of the green scintillator bodies is provided with at least one elevation and / or depression prior to stacking. In this way, it is particularly easy to form cavities and / or material bridges between adjacent scintillator bodies or in the sintered scintillator layer.

It is particularly quick and easy to produce several elevations and / or depressions at the same time by printing the green scintillator body with a dot matrix.

In a further embodiment of the invention, it has proven to be advantageous if the photoconductor is introduced in a flowable state in the at least one cavity of the scintillator and solidified in the cavity. This provides a particularly fast, easy and inexpensive way to place the photoconductor in the cavity (s) of the scintillator layer. Depending on the specific configuration of the photoconductor, it can be melted and / or mixed with a solvent in order to convert it into the flowable state. After cooling and / or the solvent has escaped, the photoconductor then remains in the cavity (s) of the scintillator layer. In the case of the use of organic polymers as photoconductors, in a further embodiment of the invention, moreover, there is the fundamental possibility of introducing the corresponding monomers or educts of the relevant polymers into the cavity (s) and polymerizing it out in the respective cavity in order to produce the photoconductor directly within the cavity.

A third aspect of the invention relates to an X-ray apparatus which, for the conversion of X-radiation into electrical signals, comprises a radiation detector according to the first aspect of the invention and / or a radiation detector obtainable or obtained by means of a method according to the second aspect of the invention. The resulting features and their advantages are shown in the comments on the radiation detector according to the invention and the method according to the invention and apply correspondingly for the X-ray machine. The X-ray device can be designed, for example, for medical X-ray imaging or X-ray control at airports, buildings and the like. However, it should be emphasized that the X-ray apparatus is not limited in terms of its design to the applications mentioned.

Further features of the invention will become apparent from the claims, the embodiment and the drawings. The features and feature combinations mentioned above in the description as well as the features and combinations of features mentioned below in the exemplary embodiment can be used not only in the respectively specified combination but also in other combinations without departing from the scope of the invention. Showing:

1 a schematic sectional side view of a radiation detector according to the invention; and

2 a schematic sectional view of the radiation detector along in 1 shown section plane II-II.

1 shows a schematic sectional side view of an inventive radiation detector 10 for the conversion of X-radiation into electrical signals and is described below in conjunction with 2 be explained, wherein 2 a schematic sectional view of the radiation detector 10 along the section plane II-II shows. The radiation detector 10 includes a first and a second electrode 12a . 12b , between which one is between the electrodes 12a . 12b extending scintillator layer 14 for the conversion of X-radiation into light pulses is arranged. The distance between the electrodes indicated by the arrows Ia 12a . 12b and thus the thickness of the scintillator layer 14 is in the illustrated embodiment between 100 microns and 2000 microns.

The scintillator layer 14 In the exemplary embodiment shown, four scintillator bodies are exemplified 16a -D, which under formation of appropriate cavities 18a C are spaced from each other. The scintillator body 16a -D point in the extension direction of the electrodes 12a . 12b considers a width indicated by the arrows Ib between 100 μm and 200 μm. The scintillator body 16a In the embodiment shown, in the exemplary embodiment shown, they consist of a doped ceramic material, wherein, for example, (Y, Gd) ₂ O ₃ : Eu, Y ₃ Al ₅ O ₁₂ : Ce or Lu ₂ SiO ₅ : Ce can be used.

The cavities 18a -C, which is perpendicular to the scintillator layer 14 between the first and second electrodes 12a . 12b are complete with an organic photoconductor 20 filled so that the required conversion of the scintillator layer 14 generated photons can be carried in charge carriers directly (close to the origin) and also the charge transport to the electrodes 12a . 12b through the entire thickness of the scintillator layer 14 can be done. The cavities 18a -C and thus also the layers of the photoconductor 20 in the embodiment shown in the direction of extension of the electrodes 12a . 12b considers a width between 5 μm and 20 μm. This width is indicated by the arrows Ic.

It can also be seen that the scintillator body 16a Are formed substantially cuboid and that with respect to the direction of extension of the electrodes 12a . 12b lateral, alternating arrangement of scintillator bodies 16a -D and photoconductors 20 corresponds to a lamellar structure.

und dem n-Typ-Halbleiter [6,6]-Phenyl-C61-buttersäuremethylester (PCBM) mit der Strukturformel

verwendet.For introducing the photoconductor 20 in the cavities 18a -C can be the photoconductor 20 for example, dissolved in a solvent and in the cavities 18a -C are filled. As a photoconductor 20 In the embodiment shown, a p / n polymer blend of the p-type semiconductor poly (3-hexylthiophene) (P3HT) with the structural formula

and the n-type semiconductor [6,6] -phenyl-C61-butyric acid methyl ester (PCBM) having the structural formula

used.

The scintillator body 16a For example, it can be made by a ceramic film process in which one or more unsintered ("green") ceramic films (not shown) are stacked into a so-called green body. The ceramic films used to form the green body can be produced, for example, by film casting a ceramic green sheet on a support. In this case, the carrier is subsequently removed from the ceramic green sheet, whereby an unsintered ceramic film is obtained. By varying the number and thickness of the ceramic sheets used, the resulting thickness of the individual scintillator bodies 16a And thus also the distance between the electrodes 12a . 12b be adjusted very easily and precisely. As already mentioned, the scintillator bodies shown have 16a -D thereby a thickness between about 100 microns and about 2000 microns. It should be emphasized, however, that the invention does not relate to the use of scintillator bodies made in this way 16a -D is limited, so that otherwise produced scintillator body 16a -D of non-ceramic materials for the preparation of the scintillator layer 14 can be used. The green body obtained by stacking the ceramic films is then at temperatures suitable for the respective material, for example at temperatures between 800 ° C and 1000 ° C for so-called Low Temperature Cofired Ceramics (LTCC) or at temperatures between about 1500 ° C and about 1800 ° C for so-called high temperature cofired ceramics (HTCC), sintered.

Furthermore, it can be provided that the ceramic films contain organic binders or that the green ceramic films are laminated with the aid of organic binders. The debinding then takes place before the sintering step at temperatures up to about 600 ° C.

One recognizes from the synopsis of 1 and 2 that between the scintillator bodies 16b and 16c several material bridges 22 are formed, by means of which the Szintillatorkörper 16b and 16c supported on each other. The material bridges 22 have in the embodiment shown uniform distances of about 10 microns from each other. It is important to emphasize that the material bridges 22 basically between all scintillator bodies 16a -D or, as shown, only between some of the scintillator bodies 16a -D can be trained. The material bridges 22 are cylindrical in the embodiment shown or circular in cross section, in principle, other geometries can be provided. With increasing number of material bridges 22 In principle, the mechanical stability of the scintillator layer increases 14 , so the number and arrangement of the material bridges 22 can be optimally adapted to the respective application. The production of material bridges 22 For example, in the context of the above-described Foliengießverfahrens done by the green Szintillatorkörper 16c and or 16b is printed with a dot matrix to form corresponding elevations and / or depressions. By the material bridges 22 of the same material as the scintillator body 16a -D exist, there is the advantage that the material bridges 22 also contribute to radiation detection. Alternatively or additionally, it may be provided that at least some material bridges 22 consist of another, preferably ceramic material, as this may result in manufacturing advantages.

The parameter values given in the documents for the definition of process and measurement conditions for the characterization of specific properties of the subject invention are also within the scope of deviations - for example due to measurement errors, system errors, Einwaagefehlern, DIN tolerances and the like - as included in the scope of the invention ,

Claims (18)

Radiation detector ( 10 ) for converting X-radiation into electrical signals, comprising at least a first and a second electrode ( 12a . 12b ) between which at least one scintillator element for converting X-radiation into light pulses and at least one photoconductor ( 20 ) are arranged for converting light pulses into electrical signals, characterized in that the radiation detector ( 10 ) at least one between the first and the second electrode ( 12a . 12b ) extending scintillator layer ( 14 ), wherein within the scintillator layer ( 14 ) at least one between the first and the second electrode ( 12a . 12b ) extending cavity ( 18a C) in which at least one photoconductor ( 20 ) is arranged. Radiation detector ( 10 ) according to claim 1, characterized in that the scintillator layer ( 14 ) at least two spaced scintillator bodies ( 16a D) between which in each case at least one photoconductor ( 20 ) is arranged. Radiation detector ( 10 ) according to claim 2, characterized in that the at least two scintillator bodies ( 16a -D) and the at least one photoconductor ( 20 ) lamellar between the first and the second electrode ( 12a . 12b ) are arranged. Radiation detector ( 10 ) according to claim 2 or 3, characterized in that adjacent scintillator bodies ( 16b . 16c ) are supported on each other. Radiation detector ( 10 ) according to claim 4, characterized in that adjacent scintillator bodies ( 16b . 16c ) by means of several material bridges ( 22 ) are supported on each other, wherein the material bridges ( 22 ) preferably have a distance between 5 microns and 15 microns from each other. Radiation detector ( 10 ) according to one of claims 1 to 5, characterized in that the scintillator layer ( 14 ) comprises a single crystal and / or a doped and / or undoped ceramic material. Radiation detector ( 10 ) according to one of claims 1 to 6, characterized in that the photoconductor ( 20 ) comprises an inorganic and / or organic electron acceptor compound and / or an inorganic and / or organic electron donor compound. Radiation detector ( 10 ) according to claim 7, characterized in that the photoconductor ( 20 ) is selected from a group comprising substituted and / or unsubstituted fullerenes, polyacetylenes, poly (para-phenylenes), polyphenylenevinylenes, polythiophenes, polyethylenedioxythiophenes, polyanilines, polysulfonic acids, polysilanes, polycarbazoles and / or polypyrroles. Radiation detector ( 10 ) according to one of claims 1 to 8, characterized in that the first electrode ( 12a ) and the second electrode ( 12b ) consist of the same or different materials. Radiation detector ( 10 ) according to one of claims 1 to 9, characterized in that a distance between the first and the second electrode ( 12a . 12b ) between 80 μm and 2500 μm, in particular between 100 μm and 2000 μm, and / or that the at least one photoconductor ( 20 ) in the direction of extension of the electrodes ( 12a . 12b ) considered a width between 2 microns and 25 microns, in particular between 5 microns and 20 microns. Radiation detector ( 10 ) according to one of claims 2 to 10, characterized in that the scintillator bodies ( 16a -D) in the direction of extension of the electrodes ( 12a . 12b ) considered a width between 80 microns and 250 microns, in particular between 100 microns and 200 microns have. Method for producing a radiation detector ( 10 ) for the conversion of X-radiation into electrical signals, in which at least one scintillator element for converting X-radiation into light pulses and at least one photoconductor ( 20 ) for converting light pulses into electrical signals between at least one first and one second electrode ( 12a . 12b ), characterized in that between the first and the second electrode ( 12a . 12b ) at least one between the first and the second electrode ( 12a . 12b ) extending scintillator layer ( 14 ), wherein within the scintillator layer ( 14 ) at least one between the first and the second electrode ( 12a . 12b ) extending cavity ( 18a C) in which at least one photoconductor ( 20 ) is arranged. Method according to claim 12, characterized in that for producing the scintillator layer ( 14 ) at least two green scintillator bodies ( 16a -D) made of a ceramic material, stacked, laminated and the scintillator layer ( 14 ) are sintered. Method according to claim 13, characterized in that the scintillator bodies ( 16a -D) are produced by a ceramic film process. Method according to claim 13 or 14, characterized in that at least one of the green scintillator bodies ( 16b , c) is provided before stacking with at least one elevation and / or depression. Method according to claim 15, characterized in that the at least one green scintillator body ( 16b , c) for producing a plurality of elevations and / or depressions is printed with a dot matrix. Method according to one of claims 12 to 16, characterized in that the photoconductor ( 20 ) in a flowable state in the at least one cavity ( 18a -C) the scintillator layer ( 14 ) and in the cavity ( 18a -C) is solidified. X-ray apparatus which converts X-radiation into electrical charge into a radiation detector ( 10 ) according to one of claims 1 to 11 and / or a radiation detector obtainable by means of a method according to one of claims 12 to 17 ( 10 ).

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