DE102010046300A1 - lighting module - Google Patents

Abstract

A lighting module is specified which has a first light-emitting semiconductor component (1) which emits red light (901) during operation, a second light-emitting semiconductor component (2) which emits green light (902) during operation, and a third light-emitting component Semiconductor component (3), which emits blue or cold white light (903) during operation, the second semiconductor component (2) having a blue-emitting second semiconductor chip and a second wavelength conversion element which has a proportion of greater than or equal to 90% of that of the second semiconductor chip emits blue light into green light (902), and a superposition of the light emitted by the first, second and third semiconductor component (1, 2, 3) results in warm white light (904).

Description

An illumination module with light-emitting semiconductor components is specified.

Lighting devices are known which are based on light emitting diodes (LEDs) and which in operation produce a warm white light desired for lighting purposes.

Efficient warm white LED lighting devices can be achieved, for example, by combining one or more red emitting LEDs with one or more so-called conversion LEDs that emit blue light, which in one conversion layer is converted to light of a different wavelength, such as yellow light , The respective operating current of the LEDs used is adapted such that the superimposition of the light emitted by all the LEDs gives white light on the white curve of a Planckian black body radiator. In this case, for example, it can be assumed that the red wavelength to which the color coordinates of the conversion LEDs are adapted in order to obtain the desired chromaticity coordinates and the desired color temperature of the illumination device. However, due to unavoidable variations in the color coordinates of the conversion LEDs, for example, variations in the dye concentration and / or wavelength variations of the blue emitting LED chips, it can not be avoided that warm white LED lighting devices having different color temperatures are obtained. In most cases, it can not be avoided that at least some of the warm white LED lighting devices are outside desired specifications, which may be in the form of so-called color bins, resulting in production losses late in the value chain.

From the publication DE 10 2008 057 347 Measures are known to regulate the operating currents of conversion LEDs and red LEDs at certain operating temperatures.

However, for a combination of red LEDs and conversion LEDs, it is generally necessary to sort the LED chips in terms of their brightness and wavelength as well as their color locus to minimize production waste. However, due to measurement errors and simplified models that can not accurately predict the outcome of a particular combination of LED chip and conversion layer, typically, no 100% production yield can be achieved.

Furthermore, it is also known to achieve each chromaticity coordinate by combining three colors within the triangle spanned by their respective chromaticity coordinates in the CIE diagram. For this purpose, monochromatic so-called RGB illumination devices which emit monochromatic light in the red, green and blue spectral range are adjusted with regard to the respectively emitted color in such a way that a desired chromaticity coordinate and a desired color temperature on the white curve can be achieved. However, the monochromatic light of such RGB illuminators produces white light with a low color rendering index (CRI).

Furthermore, it is also known to supplement the abovementioned approach of a red-emitting LED and a white-emitting conversion LED with another low-power blue-emitting LED which can be used for color correction. As a result, however, only one chromaticity coordinate of the mixed light can be corrected if too little blue light is contained in the mixed light. However, if the conversion LED emits too much blue light, the addition of another blue emitting LED can not improve the color coordinate towards the desired color coordinate.

At least one object of certain embodiments is to specify a lighting module for emitting light with a plurality of light-emitting semiconductor components.

This object is achieved by an object having the features of the independent claim. Advantageous embodiments and further developments of the subject matter are characterized in the dependent claims and will become apparent from the following description and the drawings.

An illumination module according to at least one embodiment has in particular a plurality of light-emitting semiconductor components.

The semiconductor components may each be arranged in the form of semiconductor chips or in the form of semiconductor chips in their own housings on the carrier element.

Here and below, "light" may refer in particular to electromagnetic radiation having one or more wavelengths or wavelength ranges from an ultraviolet to infrared spectral range. In particular, light may be visible light and may include wavelengths or wavelength ranges from a visible spectral range between about 350 nm and about 800 nm. Visible light can be here and in the The following can be characterized, for example, by its color locus having cx and cy chromaticity coordinates in accordance with the so-called CIE 1931 color locus or CIE standard chromaticity diagram known to a person skilled in the art.

As white light or light with a white luminous or color impression, here and below light with a color locus corresponding to the color locus of a blackbody radiator can be referred to, or by less than 0.1 and preferably less than 0.05 in cx and / or cy chromaticity coordinates deviates from the color locus of a black plank body radiator. Furthermore, a luminous impression referred to here and hereinafter as a white luminous impression can be caused by light having a color rendering index (CRI) of greater than or equal to 60, preferably greater than or equal to 80, and particularly preferably greater than or equal to equal to 90.

Furthermore, as "warm white" here and hereinafter a luminous impression may be designated, which has a color temperature of less than or equal to 4000 K, which may also be referred to as "neutral white", and preferably less than or equal to 3500 K. Furthermore, a color temperature lower than or equal to the aforementioned values and greater than or equal to 2000 K and particularly preferably greater than or equal to 2700 K can be designated as a warm white color temperature. As "cool white" can here and below be designated a white luminous impression, which has a color temperature of greater than 5500 K. The term "color temperature" may here and below designate the color temperature of a blackbody planckers or else the so-called correlated color temperature (CCT) known to the person skilled in the art in the case of a white luminous impression in the sense described above, which are characterized by chromaticity coordinates may deviate from the chromaticity coordinates of the Planck blackbody radiators.

Each of the plurality of light-emitting semiconductor components may have a semiconductor chip with an epitaxial layer sequence, that is to say an epitaxially grown semiconductor layer sequence. For example, at least one of the semiconductor components may have a semiconductor chip with a semiconductor layer sequence based on InGaAlN. InGaAlN-based semiconductor layer sequences are in particular those in which the epitaxially produced semiconductor layer sequence generally has a layer sequence of different individual layers which contains at least one single layer comprising a material made of the III-V compound semiconductor material system In _x Al _y Ga _{1. xy} N with 0 ≤ x <1, 0 <y <1 and x + y ≤ 1. Semiconductor chips and semiconductor layer sequences which have at least one active layer based on InGaAlN, for example, can preferably emit electromagnetic radiation in an ultraviolet to green wavelength range and particularly preferably in a blue wavelength range.

Furthermore, at least one semiconductor component can also have a semiconductor chip with a semiconductor layer sequence based on InGaAlP, which means that the semiconductor layer sequence can have different individual layers, of which at least one individual layer is a material made from the III-V compound semiconductor material system In _x Al _y Ga _{1. xy} P with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x + y ≤ 1. Semiconductor chips and semiconductor layer sequences which have at least one active layer based on InGaAlP, for example, can preferably emit electromagnetic radiation with one or more spectral components in a red wavelength range.

Furthermore, at least one of the light-emitting semiconductor components may comprise a wavelength conversion substance which is applied on or above a semiconductor chip. The wavelength conversion substance may be suitable for converting at least part of the light emitted by the semiconductor chip into longer-wave light. The conversion can relate only to a part of the light emitted by the semiconductor chip, so that the semiconductor component can emit an overlay of converted and unconverted light. Furthermore, the conversion can also relate essentially to the entire light emitted by the semiconductor chip, so that the semiconductor component essentially emits only converted light. In this case, "substantially the entire light" may designate at least a portion of greater than or equal to 90% of the light emitted by the semiconductor chip. Such a semiconductor device may also be referred to as a so-called full conversion device.

According to a further embodiment, the illumination module has at least one first light-emitting semiconductor component which emits red light during operation. In addition, the illumination module has at least one second light-emitting semiconductor component which emits green light during operation and at least one third light-emitting semiconductor component which emits blue or cool-white light during operation.

According to a further embodiment, the red light emitted by the first semiconductor component has a maximum wavelength, that is to say a so-called peak wavelength, of greater than or equal to 595 nm and particularly preferably greater than or equal to 605 nm. The term "red light" implies that the peak wavelength in the visible Wavelength range is and thus less than or equal to a wavelength of about 750 nm.

According to a further embodiment, the first semiconductor component has a first semiconductor chip which emits red light. For this purpose, the first semiconductor chip can have a semiconductor layer sequence which is based on a phosphite compound semiconductor material, that is to say in particular an InGaAlP compound semiconductor material described above.

According to a further embodiment, the first semiconductor component has a first semiconductor chip which is based on a nitride compound semiconductor material, that is to say in particular an InGaAlN compound semiconductor material system described above. In particular, the first semiconductor chip may emit blue light in this embodiment. Furthermore, the first semiconductor component has a first wavelength conversion element which converts substantially all the blue light emitted by the first semiconductor chip, that is to say a proportion of greater than or equal to 90%, into red light. Particularly preferably, the first wavelength conversion element has an Eu-doped wavelength conversion substance. In particular, the first wavelength conversion substance is a ceramic material, particularly preferably (Sr, Ba) ₂ Si ₅ N ₈ : Eu, that is to say, for example, Sr ₂ Si ₅ N ₈ : Eu and / or Ba ₂ Si ₅ N ₈ : Eu, and / or CaAlSiN ₃ : Eu.

A first semiconductor component with the first wavelength conversion element designed as a full conversion component can be of advantage over a red emitting semiconductor chip, especially at operating temperatures of 100 ° C. or more.

According to a further embodiment, the second semiconductor component has a second semiconductor chip which emits blue light. For this purpose, the second semiconductor chip can in particular have a semiconductor layer sequence based on a nitride compound semiconductor material system, that is to say an InGaAlN compound semiconductor material system described above. Furthermore, the second semiconductor component has a second wavelength conversion element which converts substantially all the radiation emitted by the second semiconductor chip, that is to say in particular a proportion of greater than or equal to 90%, into green light. Thus, the second semiconductor device radiates green light. In particular, green light may be referred to here and below as light with chromaticity coordinates cx and cy, for which the following applies: cx> 0.25 and cy> 0.45. Thus, the term "green light" may also include whitish green to yellowish green light in the aforementioned chromaticity coordinate area.

According to a further embodiment, the second wavelength conversion element comprises a Ce-doped garnet-based ceramic material and / or an Eu-doped ceramic material based on a silicon oxynitride. In particular, the garnet-based ceramic material YAG: Ce (yttrium-aluminum-garnet) and / or LuAG: Ce (lutetium-aluminum-garnet), wherein the constituents yttrium or lutetium and / or aluminum are at least partially replaced by Ga and / or Gd and / or Sc can be replaced. Particularly suitable as wavelength conversion material in the form of a ceramic material based on a silicon oxynitride are Sr-SiON: Eu and / or Ba-SiON: Eu. Wavelength conversion elements based on ceramic materials advantageously have high efficiency for high conversion rates in comparison to other wavelength conversion materials, which makes it possible, in particular with advantage, to make full conversion components possible.

According to a further embodiment, a semiconductor component with a wavelength conversion element, that is to say in particular the second semiconductor component with the second wavelength conversion element, has light emitted during operation which has a spectral width, in particular a full width at half maximum (FWHM) of greater than or equal to 70 nm up. If a first semiconductor chip is used in combination with the first wavelength conversion element described above for the at least one first semiconductor component, then the light emitted by the first semiconductor component can likewise have such a spectral width.

According to a further embodiment, the third semiconductor component has a third semiconductor chip which is based on a nitride compound semiconductor material, that is to say an InGaAlN compound semiconductor material described above, and which emits blue light during operation. In addition, the third semiconductor device may also include a third wavelength conversion element that converts a portion of the light emitted by the third semiconductor chip into longer wavelength light, such as green, yellow, and / or red, such that an overlay of the light emitted from the third semiconductor chip with the converted light is cool white Light results.

According to a further embodiment, the light emitted by the third semiconductor component has chromaticity coordinates cx and cy, for which the following applies: cx <0.35 and cy <0.4. Thus, under the term "blue light" and / or "cold white light" also greenish blue, whitish blue and / or reddish blue light fall. The third wavelength conversion element may be an Eu-doped ceramic material, for example, Sr-SiO 2: Eu, or an upper one have described on a garnet-based Ce-doped ceramic material. In contrast to the second semiconductor component with the second wavelength conversion element, which is preferably designed in the form of a full conversion component, the third wavelength conversion element is designed such that only a part of the blue light emitted by the third semiconductor chip is converted.

According to a further embodiment, the superimposition of the light emitted by the first, second and third semiconductor component respectively gives warm white light. In particular, the warm white light may have a color temperature or a correlated color temperature of greater than or equal to 2000 and less than or equal to 4000, and most preferably about 3000K.

The lighting module may include a support member such as a housing or a printed circuit board on which the semiconductor devices are disposed. For example, the housing may comprise a plastic, in particular a thermoplastic or a duroplastic, which can be produced for example by a molding process such as transfer molding, injection molding, compression molding, or a combination thereof. The plastic may have a silicone and / or an epoxy resin or a silicone-epoxy hybrid material.

In order to achieve a high degree of color homogeneity of the light emitted by the lighting module, the lighting module can furthermore have an optical element which is arranged downstream of the first, second and third semiconductor components and which effects thorough mixing of the respectively emitted light. The optical element can, for example, be a light-refracting element, for example an optical diffuser in the form of a scattering plate or scattering film with scattering volume and / or surface elements, such as scattering particles and / or surface roughening.

If, for example, the illumination module has a housing in which the semiconductor components are arranged, then the optical element can serve in particular as a cover of the semiconductor components.

In particular, it may be advantageous for producing warm white light if at least a first light-emitting semiconductor component according to one of the above-mentioned embodiments is combined with a third semiconductor component which emits cold-white light. Alternatively, in combination with the first semiconductor light-emitting device described above, the third semiconductor device may emit blue light. In both cases, the second semiconductor component can advantageously have a second wavelength conversion element with a garnet-based ceramic material doped with Ce and / or an Eu-doped ceramic material based on a silicon oxynitride according to the embodiments described above.

By changing the operating temperature and / or the ambient temperature and, for example, also by aging effects, the wavelength range of a light emitted by a semiconductor component can change. For example, the peak wavelength of a red emitting InGaAlP semiconductor chip may shift toward longer wavelengths with increasing temperature. In addition, it is also possible that, with increasing temperature, the color locus of a semiconductor component with a wavelength conversion element shifts in the direction of blue color coordinates, since the wavelength conversion substance can be less efficient with increasing temperature. For this reason, it may be advantageous if the operating current of at least one of the semiconductor components of the illumination module can be regulated as a function of a temperature and / or a wavelength spectrum and / or a light intensity in order to stabilize the chromaticity coordinates of the mixed light against changes.

For this purpose, the lighting module can, for example, have at least one light- and / or temperature-sensitive current-regulating component which, during operation, regulates at least one operating current of a semiconductor component as a function of a light output and / or a temperature of the semiconductor component. The regulating component may, for example, have or be a resistance element with a positive temperature coefficient. This means that the electrical resistance of the regulating component increases with increasing temperature and the regulating component is designed as a so-called PTC thermistor or as a so-called PTC component (PTC: "positive temperature coefficient"). Such a regulating component can, for example, be connected in series with a semiconductor component which has a blue-emitting semiconductor chip. As the temperature increases, so does the resistance of the controlling device, so that less current flows through the semiconductor device connected in series with the regulating device, thereby reducing or compensating for the increase in blue of the mixed light emitted by the illumination module at higher temperatures.

Alternatively or additionally, a resistive element having a negative temperature coefficient, that is to say a so-called NTC resistance component ("negative temperature coefficient"), can also be used as a regulating component.

Alternatively or additionally, the regulating component may, for example, also have one or more temperature and / or light sensors and at least one actively regulating component, such as a microprocessor, by means of which a compensation of temperature- and / or age-dependent color location shifts of the mixed light can be compensated.

In conjunction with the description of the figures, advantageous illumination modules with regulating components are described.

The illumination module described here can have the advantage that it is no longer necessary to select only semiconductor chips or semiconductor components from certain narrow color location coordinate bins, but that semiconductor chips or semiconductor components can be selected from the abovementioned large color coordinate locations to produce a desired warm white mixed light. This may make it possible to achieve a production throughput of 100%. Since at least one semiconductor component in the form of a full conversion component is used in the form of the second semiconductor component, which has a broader emission spectrum, ie greater than or equal to 70 nm, compared to monochromatic LEDs, it is possible for the illumination module described here to have light with a high color rendering index of usually greater than or equal to 85 can radiate. Furthermore, simulations have shown that by using highly efficient green emitting full conversion devices in the form of the second semiconductor device described herein with a ceramic wavelength conversion element in combination with blue and / or cool white emitting semiconductor devices and red emitting semiconductor devices, up to 5% higher efficiency compared to known two-color solutions, as known in the art, can be achieved.

The chromaticity coordinates of the respectively used first, second and third semiconductor components can have significantly higher variations and thus significantly greater tolerances compared to known illumination devices without having to accept a corresponding variation of the color locus of the mixed light emitted by the illumination module. Thus, it may even be possible to use unsorted wavelength conversion elements for the semiconductor components described here, whereby the production throughput with respect to the wavelength conversion elements can be significantly increased, which can simultaneously lead to a reduction of production costs. If, for example, semiconductor chips are still coated together with the material of the wavelength conversion element in a wafer level coating process in the wafer assembly, then it may be possible for the illumination module described here to use all the semiconductor components resulting therefrom without having to limit themselves to such semiconductor components whose color locus is a narrow predetermined Farbortbereich (Bin) lie.

Further advantages and advantageous embodiments and developments of the invention will become apparent from the following in connection with the 1 to 4 described embodiments.

Show it:

1 FIG. 2 a schematic representation of color loci of semiconductor components of a lighting module according to an exemplary embodiment, FIG.

2 a schematic representation of Farbortbereichen of semiconductor devices of a lighting module according to another embodiment and

3 and 4 schematic representations of lighting modules according to further embodiments.

In the exemplary embodiments and figures, identical or identically acting components may each be provided with the same reference numerals. The illustrated elements and their proportions with each other are basically not to be regarded as true to scale, but individual elements, such as layers, components, components and areas, for better representability and / or better understanding exaggerated thick or large dimensions.

In conjunction with the 1 to 4 Embodiments of lighting modules are described that include a first light-emitting semiconductor device that emits red light in operation, a second light-emitting semiconductor device that emits green light during operation, and a third light-emitting semiconductor device that emits blue or cool-white light during operation. wherein a superposition of the light emitted by the semiconductor components in each case gives warm white light.

In the 1 and 2 In each case, the CIE standard color chart known to the person skilled in the art is shown with the chromaticity coordinate cx on the horizontal axis and the chromaticity coordinate cy on the vertical axis. This characterizes the line 900 the so-called white curve known to those skilled in the art Planck blackbody radiator at different temperatures this. These temperatures are also referred to as color temperature. The cross E denotes the (mathematical) white point with the chromaticity coordinates x = y = 1/3, which corresponds approximately to a color temperature of 5500 Kelvin.

For the first light-emitting semiconductor component, a first semiconductor chip or a first semiconductor chip is selected in conjunction with a first wavelength conversion element, so that the spectral distribution of the light emitted by the first semiconductor component has a maximum at a wavelength of greater than or equal to 595 nm, and particularly preferably greater than or equal to 605 nm. This wavelength is also referred to as peak wavelength.

If only a first semiconductor chip is used for the semiconductor component, it has an epitaxial layer sequence of an InGaAlP compound semiconductor material which has light with the aforementioned feature. Alternatively, the first semiconductor device can also be embodied as a full conversion semiconductor component and have a first semiconductor chip which is based on a nitride compound semiconductor material which emits blue light in operation. The first semiconductor chip is followed by a first wavelength conversion element which has an Eu-doped ceramic material, in particular (Sr, Ba) ₂ Si ₅ N ₈ : Eu. The first wavelength conversion element is designed with regard to its conversion efficiency such that a proportion of greater than or equal to 90% of the blue light emitted by the first semiconductor chip is converted into red light.

In particular, any first semiconductor device can be selected that emits light with chromaticity coordinates that in with 901 in 1 designated Farbortkoordinatenbereich lie. While the location of the color locus of the light emitted by the first semiconductor device along the spectral color line is substantially determined by the peak wavelength of the red light, the location perpendicular to the spectral color line is determined by the proportion of unconverted blue light of the first semiconductor chip when using a full conversion device.

Furthermore, a second semiconductor component is selected which is designed as a full conversion component and has a second semiconductor chip which emits blue light during operation. The second semiconductor chip is followed by a second wavelength conversion element which converts substantially all of the radiation emitted by the second semiconductor chip, that is to say a proportion of greater than or equal to 90%, into green light. The second semiconductor component is selected such that it has a color locus with chromaticity coordinates, which in the in 1 With 902 designated color coordinates range, for which in particular cx> 0.25 and cy> 0.45 applies.

The third semiconductor device has a third semiconductor chip which emits blue light during operation. In addition, the third semiconductor component can also have a third wavelength conversion element which converts a portion of the blue light emitted by the third semiconductor chip into light having a yellow, green and / or red color impression. In particular, a superimposition of the light emitted directly by the third semiconductor chip with the light converted by the third wavelength conversion element gives a cold-white luminous impression.

The third semiconductor component is selected such that it emits light with a color locus that is characterized by chromaticity coordinates that are in the in 1 With 903 are designated chromaticity coordinates range for which cx <0.35 and cy <0.4. If a third wavelength conversion element is used, it most preferably has a garnet-based ceramic-doped ceramic material and / or an Eu-doped ceramic material, as described above in the general part.

As a result of the aforementioned selection of the first, second and third semiconductor components, the setting of the respective operating current without further pre-selection of the semiconductor components makes it possible to select from the color coordinate ranges mentioned 901 . 902 and 903 each produce mixed light with a warm white light impression.

The following combinations of semiconductor chips and / or wavelength conversion elements for the first, second and third semiconductor components have proved to be particularly advantageous for this purpose.

Either an InGaAlP-based red-emitting semiconductor chip or a blue-emitting first semiconductor chip with a first wavelength conversion element comprising a ceramic material based on (Sr, Ba) ₂ Si ₅ N ₈ can be selected for the first semiconductor component.

The second semiconductor component has a blue emitting second semiconductor chip and a second semiconductor component based on a YAG: Ce ceramic material and derivatives thereof, which have Ga and / or Gd and / or Sc, based on LuAG: Ce and / or based on Sr-SiON: Eu- and / or Ba-SiON: Eu ceramic materials

The third semiconductor device has a third semiconductor chip which emits blue light. Alternatively, the third semiconductor device may include a third, blue emitting semiconductor chip in conjunction with a third wavelength conversion element so that the third semiconductor device emits cold white light.

Simulations have shown that the superposition of light emitted by such first, second and third semiconductor devices can always be achieved by slight variations of the respectively emitted blue and red light, always warm white mixed light with a CRI greater than 80.

In 2 becomes the color location 904 for the mixed light of a lighting module according to another embodiment, wherein as the first semiconductor device, a first semiconductor chip based on InGaAlP is selected, which has a peak wavelength of about 605 nm, as through the color locus 908 is indicated. Furthermore, a second semiconductor device is selected, the green light in the with 905 designated Farbortkoordinatenbereich radiates, while the third semiconductor device, a third semiconductor chip is selected in conjunction with a third wavelength conversion element, the cool white light in with 906 designated Farbortkoordinatenbereich radiates. The color loci 905 and 906 represent purely exemplary typical, production-related Farbortvariationen of unsorted cold white third semiconductor devices and unsorted green emitting second semiconductor devices.

The weighting of the relative intensities of the second and the third semiconductor component to each other can always be selected such that the resulting from the second and third semiconductor device mixed on the with 907 designated connecting line between the color location 908 the first semiconductor device and the desired color location 904 of the mixed light lies. By weighting the light intensity of the first semiconductor component in comparison to the light intensities of the second and third semiconductor component, the desired color locus can thus be used for the mixed light 904 for a warm white light impression in the range of about 3000 K can be achieved. As an alternative to the exemplary embodiment shown, the cool white-emitting third semiconductor component can also be replaced by a blue-emitting third semiconductor component.

In 3 is an equivalent circuit diagram for a lighting module 100 with first semiconductor devices 1 , second semiconductor devices 2 and third semiconductor devices 3 shown the purely exemplary light with the in conjunction with 2 Radiate described color location areas. Furthermore, the lighting module 100 two temperature-dependent current-regulating components 4 on, which are executed in the embodiment shown as PTC resistor elements.

To a desired light intensity of the illumination module 100 to reach radiated warm white mixed light with a color temperature of about 3000 K, has the lighting module 100 two first semiconductor devices 1 which, in the exemplary embodiment shown, are embodied as red-emitting semiconductor chips based on an InGaAlP compound semiconductor material.

Furthermore, the lighting module 100 three second semiconductor devices 2 and two third semiconductor devices 3 on that, as in 2 are so chosen with regard to their radiated light that they are on different sides of the in 2 With 907 Plotted connecting line between the color locus 908 the first semiconductor devices 1 and the desired color location 904 from the lighting module 100 radiated mixed light lie.

For the production of the lighting module 100 become the first, second and third semiconductor devices 1 . 2 . 3 as well as the current regulating elements 4 on a common support, for example a common housing or a printed circuit board, mounted and according to the interconnection shown between electrical connections 5 and 6 connected. In particular, the lighting module 100 a series circuit, which is a first subcircuit 91 and two second semiconductor devices 2 and a third semiconductor device 3 between the electrical connections 5 and 6 having. The first subcircuit 91 is achieved by a parallel connection of two series-connected first semiconductor devices 1 and a second subcircuit 92 educated. The second subcircuit 92 has a series connection of a current-regulating element 4 and a parallel connection with a second and a third semiconductor device 2 . 3 on. The parallel circuit further comprises a second current regulating element 4 depending on the light intensity of the second and third semiconductor device 2 . 3 the parallel circuit can be connected to one of the two branches of the parallel circuit, as indicated by the dotted line.

After mounting the semiconductor devices, they are measured in terms of their color, their luminous intensity and their operating voltage to allow accurate adjustment of the mixed light. As a current-regulating components 4 adjustable PTC resistor components are used, which can be adjusted in a known manner in the art, for example by means of laser ablation, at a certain temperature to a selected resistance value. This allows the Current regulating elements 4 be adjusted so that when applying a voltage between the terminals 5 and 6 that of the lighting module 100 radiated light emits a warm white light impression with a color temperature of about 3000 K. By setting the in the parallel circuit of the second and the third semiconductor device 2 . 3 contained current regulating device 4 can be a point on the in 2 With 907 designated line by a mixture of the second and the third semiconductor devices 2 and 3 radiated light can be achieved. By adjusting the current regulating device 4 , which is connected in series with said parallel connection, can adjust the relative brightness of the second and third semiconductor devices 2 . 3 in relation to the first semiconductor devices 1 be achieved, thereby creating the desired color location 904 can be achieved.

In order to achieve the most homogeneous color possible, the lighting module can 100 an optical element in the form of a scattering plate or a scattering film for mixing of the semiconductor components 1 . 2 . 3 each emitted light (not shown).

When using a LuAG: Ce ceramic material for the respective second wavelength conversion element of the second semiconductor devices 2 has been shown that the intensity of the second semiconductor devices 2 radiated light must be about twice as large as that of each of the first and third semiconductor devices radiated light.

Apart from the aforementioned features for the semiconductor devices 1 . 2 . 3 unsorted semiconductor devices can be used. Due to the interconnection of the semiconductor components shown 1 . 2 . 3 is always a lighting module 100 can be produced, the warm white light in the range of a color temperature of about 3000 K radiates. By using PTC resistor elements for the current regulating elements 4 color locus drifts caused by temperature changes can be compensated, so the lighting module shown 100 can emit light with the desired warm white light impression in a wide temperature range.

4 is an equivalent circuit diagram for a lighting module 200 according to a further embodiment, the first compared to the previous embodiment semiconductor devices 1 which, as described above, executed as Vollkonversionsbauelemente.

There are two first semiconductor devices 1 , a second semiconductor device 2 and a first subcircuit 91 between the electrical connections 5 and 6 connected in series.

The first subcircuit 91 is as a parallel connection of a second subcircuit 92 with a third semiconductor device 3 formed with a current regulating element 4 is connected in the form of a PTC resistor element. The third semiconductor device 3 can emit either blue or cool white light. Because in the embodiment shown the 4 in addition to the second semiconductor components designed as full conversion components 2 also the first semiconductor devices 1 are executed as Vollkonversionsbauelemente, each having a color locus shift in the direction of blue color loci on increasing the operating temperature, is a lesser additional proportion of blue light in the form of the third semiconductor device 3 necessary to achieve mixed light with the desired warm white color temperature. This makes it possible to use the first and second semiconductor components 1 . 2 in terms of their light intensity by means of the current-regulating element 4 against the light intensity of the third semiconductor device and due to the temperature dependence of the resistance of the current regulating element 4 constant over a wide temperature range.

Alternatively to the embodiments shown in the 3 and 4 can the lighting modules 100 and 200 in place of the current designed as PTC resistor elements regulating elements 4 For example, light and / or temperature sensors in conjunction with actively regulating components, for example in the form of a microcontroller, have.

If the color locus of the mixed light is desired only at a certain temperature, the lighting modules can 100 and 200 only the first, second and third semiconductor devices 1 . 2 . 3 without the additional electricity regulating elements 4 exhibit.

The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• DE 102008057347 [0004]

Claims (14)

A lighting module, comprising: a first light-emitting semiconductor device ( 1 ), which in operation is red light ( 901 ) radiates a second light-emitting semiconductor device ( 2 ), the green light ( 902 ) and a third light-emitting semiconductor device ( 3 ), which in operation is blue or cold white light ( 903 ), wherein the second semiconductor device ( 2 ) has a blue emitting second semiconductor chip and a second wavelength conversion element which has a proportion of greater than or equal to 90% of the blue light emitted by the second semiconductor chip into the green light ( 902 ), and wherein a superimposition of the first, second and third semiconductor components ( 1 . 2 . 3 ) each radiated light ( 901 . 902 . 903 ) warm white light ( 904 ). Illumination module according to claim 1, wherein that of the first semiconductor device ( 1 ) emitted red light ( 901 ) has a peak wavelength of greater than or equal to 595 nm, in particular greater than or equal to 605 nm. Illumination module according to claim 1 or 2, wherein that of the second semiconductor device ( 2 ) radiated green light ( 902 ) Color coordinate coordinates cx and cy with cx> 0.25 and cy> 0.45. Illumination module according to one of the preceding claims, wherein that of the third semiconductor device ( 3 ) radiated light ( 903 ) Color coordinate coordinates cx and cy with cx <0.35 and cy <0.4. Illumination module according to one of the preceding claims, wherein that of the second semiconductor device ( 2 ) radiated green light ( 902 ) has a spectral width of greater than or equal to 70 nm. Illumination module according to one of claims 1 to 5, wherein the third semiconductor device ( 3 ) cool white light ( 903 ) and the second wavelength conversion element comprises a Ce-doped garnet-based ceramic material and / or an Eu-doped ceramic material based on a silicon oxynitride. Illumination module according to one of claims 1 to 5, wherein the third semiconductor device ( 3 ) blue light ( 903 ) and the second wavelength conversion element comprises a Ce-doped garnet-based ceramic material and / or an Eu-doped ceramic material based on a silicon oxynitride. Illumination module according to one of claims 1 to 7, wherein the first semiconductor device ( 1 ) has a red emitting first semiconductor chip. Illumination module according to one of claims 1 to 7, wherein the first semiconductor device ( 1 ) has a blue emitting first semiconductor chip and a first wavelength conversion element which has a proportion of greater than or equal to 90% of the blue light emitted by the first semiconductor chip in red light ( 901 ) converts. Illumination module according to claim 9, wherein the first wavelength conversion element comprises an Eu-doped ceramic material, in particular (Sr, Ba) ₂ Si ₅ N ₈ : Eu and / or CaAlSiN ₃ : Eu. Lighting module according to one of the preceding claims, further comprising at least one light and / or temperature-sensitive current-regulating component ( 4 ) which, during operation, regulates at least one operating current of a semiconductor component as a function of a light output and / or a temperature of the semiconductor component. Illumination module according to one of the preceding claims, wherein the first, second and third semiconductor component ( 1 . 2 . 3 ) an optical element for mixing the radiated light ( 901 . 902 . 903 ) is subordinate. Lighting module according to one of claims 1 to 12, wherein the lighting module is a series circuit with a first sub-circuit ( 91 ), two second semiconductor devices ( 2 ) and a third semiconductor device ( 3 ), wherein the first subcircuit ( 91 ) two series-connected first semiconductor devices ( 1 ) and in parallel a second subcircuit ( 92 ), wherein the second subcircuit ( 92 ) at least one light and / or temperature-sensitive current-regulating component ( 4 ) and a parallel connection of a second and a third semiconductor device ( 2 . 3 ) and wherein the first semiconductor components ( 1 ) comprise red emitting first semiconductor chips. Lighting module according to one of claims 1 to 12, wherein the lighting module is a series circuit with a first sub-circuit ( 91 ), two first semiconductor devices ( 1 ) and a second semiconductor device ( 2 ), wherein the first subcircuit ( 91 ) a parallel connection with a third semiconductor device ( 3 ) in series with a light and / or temperature sensitive current regulating device ( 4 ) and parallel to a second subcircuit ( 92 ), wherein the second subcircuit ( 92 ) a first semiconductor device ( 1 ) and parallel thereto, a second semiconductor component ( 2 ) and wherein each of the first semiconductor devices ( 1 ) each having a blue emitting first semiconductor chip and a first wavelength conversion element, which has a proportion of greater than or equal to 90% of the light emitted by the respective first semiconductor chip blue light in red light ( 901 ) converts.

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