DE102010032807A1 - Heat derivative structure for LED construction, has LED crystals provided on metallic carrier, and base board provided with printed conductor layer, where LED crystals on metallic carrier are connected with conductor layer - Google Patents
Heat derivative structure for LED construction, has LED crystals provided on metallic carrier, and base board provided with printed conductor layer, where LED crystals on metallic carrier are connected with conductor layer Download PDFInfo
- Publication number
- DE102010032807A1 DE102010032807A1 DE201010032807 DE102010032807A DE102010032807A1 DE 102010032807 A1 DE102010032807 A1 DE 102010032807A1 DE 201010032807 DE201010032807 DE 201010032807 DE 102010032807 A DE102010032807 A DE 102010032807A DE 102010032807 A1 DE102010032807 A1 DE 102010032807A1
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- Prior art keywords
- emitting diode
- light
- metallic
- heat dissipation
- conductor layer
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- 239000004020 conductor Substances 0.000 title claims abstract description 26
- 239000013078 crystal Substances 0.000 title claims abstract description 21
- 238000010276 construction Methods 0.000 title description 2
- 239000002131 composite material Substances 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 4
- 239000010439 graphite Substances 0.000 claims abstract description 4
- 239000000919 ceramic Substances 0.000 claims abstract description 3
- 238000002844 melting Methods 0.000 claims abstract description 3
- 230000008018 melting Effects 0.000 claims abstract description 3
- 238000002604 ultrasonography Methods 0.000 claims abstract 2
- 230000017525 heat dissipation Effects 0.000 claims description 16
- 230000005611 electricity Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 239000011152 fibreglass Substances 0.000 claims 1
- 241001136792 Alle Species 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0323—Carbon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0285—Using ultrasound, e.g. for cleaning, soldering or wet treatment
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Device Packages (AREA)
Abstract
Description
Hintergrund der ErfindungBackground of the invention
(a) Bereich der Erfindung(a) Field of the invention
Die Erfindung betrifft eine Wärmeableitstruktur und die zu ihrer Herstellung angewandte Methode, wobei die Wärmeableitstruktur besonders eine Leuchtdiodenkonstruktion mit mehreren Kristallen auf einem metallischen Träger betrifft.The invention relates to a Wärmeableitstruktur and the method used for their preparation, wherein the Wärmeableitstruktur particularly relates to a light-emitting diode construction with a plurality of crystals on a metallic support.
(b) Beschreibung des derzeitigen Standes der Technik(b) Description of the current state of the art
Aus Umweltschutzgründen werden Glühlampen mehr und mehr von LEDs (Leuchtdioden) verdrängt. Um die Markterfordernisse zu erfüllen geht die Entwicklung dabei in Richtung von LEDs mit mehreren Kristallen. Dabei treten jedoch Probleme mit nicht ausreichender oder ungleichmäßiger Wärmeabfuhr auf, die zu verringerter Lichtausbeute und Lebensdauer führen.For environmental reasons, incandescent lamps are increasingly being replaced by LEDs (light emitting diodes). In order to meet the market requirements, the development is moving towards LEDs with multiple crystals. However, there are problems with insufficient or uneven heat dissipation, resulting in reduced luminous efficacy and lifetime.
Zusammenfassung der ErfindungSummary of the invention
Ziel der Erfindung ist eine Wärmeableitstruktur für eine Leuchtdiodenkonstruktion mit mehreren Kristallen auf metallischem Träger, die zu einer Verlängerung der Lebensdauer der LED beiträgt, sowie dabei hilft den Abfall der Lichtausbeute zu verringern und die zugehörige Herstellungsmethode.The object of the invention is a heat dissipation structure for a light-emitting diode structure with a plurality of crystals on a metallic support, which contributes to an extension of the life of the LED, as well as helps to reduce the decrease in the light output and the associated production method.
Wichtige Aspekte für die Erreichung des oben genannten Ziels sind:
- (A) Eine Basisplatte aus Verbundmaterial mit einer aufgedruckten Leiterschicht.
- (B) Mit der Leiterschicht verbundene Leuchtdiodenkristalle auf metallischem Träger.
- (C) Elektrisch mit der Leiterschicht verbundene Bondierdrähte,
- (A) A composite base plate having a printed conductor layer.
- (B) Light-emitting diode crystals connected to the conductor layer on a metal carrier.
- (C) Bonding wires electrically connected to the conductor layer,
Die Leuchtdiodenkonstruktion mit mehreren Kristallen auf metallischem Träger enthält eine Basisplatte aus Verbundmaterial, eine isolierende Wärmeleitschicht, eine gedruckte Leiterschicht, eine Wärme und Elektrizität leitende Schicht und eine LED mit mehreren Kristallen auf metallischem Träger. Basisplatte und Leiterschicht sind durch eine wärmeleitende Isolierschicht und Leiterschicht und metallischer Träger sind durch eine Wärme und Elektrizität leitende Schicht verbunden.The multi-crystal light-emitting diode structure on a metallic substrate includes a composite base plate, an insulating heat conducting layer, a printed wiring layer, a heat and electricity conducting layer, and a multi-crystal LED on a metallic substrate. Base plate and conductor layer are connected by a heat-conducting insulating layer and conductor layer and metallic carrier are connected by a heat and electricity conducting layer.
Kurze Beschreibung der ZeichnungenBrief description of the drawings
Detaillierte Beschreibung der bevorzugten AusführungDetailed description of the preferred embodiment
Zur Erreichung des oben genannten Ziels dienen die folgenden Schritte:
- (A) Eine Basisplatte aus Verbundmaterial wird mit einer gedruckten Leiterschicht versehen.
- (B) Leuchtdiodenkristalle auf metallischem Träger werden mit der Leiterschicht verbunden.
- (C) Ein Bondierdraht stellt die elektrische Verbindung mit der Leiterschicht her,
- (A) A composite base plate is provided with a printed wiring layer.
- (B) Light-emitting diode crystals on metallic carrier are connected to the conductor layer.
- (C) A bonding wire establishes the electrical connection with the conductor layer,
Bei Betrachten von
Die Erfindung bringt folgende Vorteile mit sich:
- 1. Durch die gleichmäßige Verteilung der Leuchtdioden ist die Wirkung der ersten Wärmeabfuhrstufe, bei der die Wärme von den Leuchtdioden an die Leiterschicht weitergegeben wird für alle gleich.
- 2. Von der Basisplatte aus einem Graphitverbundmaterial wird die Wärme in der zweiten Wärmeabfuhrstufe schnell in alle Richtungen abgegeben, wodurch die Lebensdauer der Leuchtdioden verlängert und der Abfall der Lichtleistung über die Lebensdauer verringert wird.
- 1. Due to the uniform distribution of the light-emitting diodes, the effect of the first heat dissipation stage, in which the heat is passed from the light-emitting diodes to the conductor layer, is the same for all.
- 2. From the graphite composite base plate, the heat in the second heat dissipation stage is rapidly dissipated in all directions, thereby extending the life of the LEDs and reducing the decrease in light output over the lifetime.
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201010032807 DE102010032807A1 (en) | 2010-07-30 | 2010-07-30 | Heat derivative structure for LED construction, has LED crystals provided on metallic carrier, and base board provided with printed conductor layer, where LED crystals on metallic carrier are connected with conductor layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201010032807 DE102010032807A1 (en) | 2010-07-30 | 2010-07-30 | Heat derivative structure for LED construction, has LED crystals provided on metallic carrier, and base board provided with printed conductor layer, where LED crystals on metallic carrier are connected with conductor layer |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102010032807A1 true DE102010032807A1 (en) | 2012-01-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE201010032807 Ceased DE102010032807A1 (en) | 2010-07-30 | 2010-07-30 | Heat derivative structure for LED construction, has LED crystals provided on metallic carrier, and base board provided with printed conductor layer, where LED crystals on metallic carrier are connected with conductor layer |
Country Status (1)
Country | Link |
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DE (1) | DE102010032807A1 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080179618A1 (en) * | 2007-01-26 | 2008-07-31 | Ching-Tai Cheng | Ceramic led package |
US20100176751A1 (en) * | 2008-05-20 | 2010-07-15 | Panasonic Corporation | Semiconductor light-emitting device as well as light source device and lighting system including the same |
-
2010
- 2010-07-30 DE DE201010032807 patent/DE102010032807A1/en not_active Ceased
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080179618A1 (en) * | 2007-01-26 | 2008-07-31 | Ching-Tai Cheng | Ceramic led package |
US20100176751A1 (en) * | 2008-05-20 | 2010-07-15 | Panasonic Corporation | Semiconductor light-emitting device as well as light source device and lighting system including the same |
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R082 | Change of representative |
Representative=s name: HORAK RECHTSANWAELTE, DE Representative=s name: HORAK RECHTSANWAELTE PARTNERSCHAFT MBB, DE |
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R082 | Change of representative |
Representative=s name: HORAK RECHTSANWAELTE, DE Representative=s name: HORAK RECHTSANWAELTE PARTNERSCHAFT MBB, DE |
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R002 | Refusal decision in examination/registration proceedings | ||
R003 | Refusal decision now final |
Effective date: 20130112 |