DE102016218451A1 - Power electronic circuit and method for its production - Google Patents
Power electronic circuit and method for its production Download PDFInfo
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- DE102016218451A1 DE102016218451A1 DE102016218451.2A DE102016218451A DE102016218451A1 DE 102016218451 A1 DE102016218451 A1 DE 102016218451A1 DE 102016218451 A DE102016218451 A DE 102016218451A DE 102016218451 A1 DE102016218451 A1 DE 102016218451A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/112—Mixed assemblies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Die Erfindung betrifft ein Verfahren zur Herstellung einer leistungselektronischen Schaltung, bei dem – ein Kühlkörper (11) durch Strangpressung hergestellt wird, – eine Isolationsschicht (12, 21) auf wenigstens eine erste Oberfläche des Kühlkörpers (11) aufgebracht wird, – eine elektrisch leitfähige Schicht (13, 22) auf die Isolationsschicht (12, 21) aufgebracht wird, – wenigstens ein leistungselektronisches Bauteil (14, 15, 23, 24) auf die elektrisch leitfähige Schicht (13, 22) aufgebracht wird.The invention relates to a method for producing a power electronic circuit in which - a heat sink (11) is produced by extrusion, - an insulation layer (12, 21) is applied to at least a first surface of the heat sink (11), - an electrically conductive layer (13, 22) is applied to the insulating layer (12, 21), - at least one power electronic component (14, 15, 23, 24) is applied to the electrically conductive layer (13, 22).
Description
Die Erfindung betrifft eine leistungselektronische Schaltung sowie ein Verfahren zur Herstellung einer leistungselektronischen Schaltung. The invention relates to a power electronic circuit and a method for producing a power electronic circuit.
Elektrische Wandler wie beispielsweise Wechselrichter bestehen aus Sicht des Leistungsteils im Wesentlichen aus Leistungsschaltern, einem Zwischenkreiskondensator sowie einem Kühlkörper. Da bei größeren Leistungen der Strom nicht mehr wirtschaftlich über die Leiterplatte geführt werden kann, kommen bei den Leistungsschaltern anstatt diskreter Transistoren typischerweise komplette Leistungsmodule mit integrierten Lastanschlüssen zum Einsatz. Zur Entwärmung werden die Leistungsmodule auf dem Kühlkörper montiert, der die Verlustleistung dort mittels eines Kühlmediums, häufig Wasser, abführt. Da sich die Leistungsmodule wiederum aus wirtschaftlichen Gründen nicht an die genauen Randbedingungen anpassen lassen, werden sie oft überdimensioniert oder verwenden ein nicht-optimales Design. Auch beim Kühler schränkt die begrenzte Auswahl die Entwicklung stark ein. Electrical converters such as inverters consist essentially of circuit breakers, an intermediate circuit capacitor and a heat sink, from the perspective of the power unit. Since the current can no longer be economically routed through the printed circuit board for larger outputs, the circuit breakers typically use complete power modules with integrated load connections instead of discrete transistors. For cooling, the power modules are mounted on the heat sink, which dissipates the power loss there by means of a cooling medium, often water. Again, because of economic reasons, the power modules can not be adapted to the exact boundary conditions, they are often oversized or use a non-optimal design. Even with the cooler, the limited choice greatly restricts the development.
Es ist Aufgabe der vorliegenden Erfindung, eine verbesserte leistungselektronische Schaltung sowie ein Verfahren zu deren Herstellung anzugeben, mit der die eingangs genannten Nachteile vermieden werden. Diese Aufgabe wird durch ein Verfahren mit den Merkmalen von Anspruch 1 gelöst. Eine weitere Lösung ist eine leistungselektronische Schaltung mit Merkmalen von Anspruch 10. Die Unteransprüche betreffen vorteilhafte Ausgestaltungen der leistungselektronischen Schaltung. It is an object of the present invention to provide an improved power electronic circuit and a method for their production, with which the disadvantages mentioned are avoided. This object is achieved by a method having the features of claim 1. Another solution is a power electronic circuit with features of claim 10. The dependent claims relate to advantageous embodiments of the power electronic circuit.
Bei dem erfindungsgemäßen Verfahren zur Herstellung einer leistungselektronischen Schaltung wird ein Kühlkörper durch Strangpressung hergestellt, eine Isolationsschicht auf wenigstens eine erste Oberfläche des Kühlkörpers aufgebracht, eine elektrisch leitfähige Schicht auf die Isolationsschicht aufgebracht und wenigstens ein leistungselektronisches Bauteil auf die elektrisch leitfähige Schicht aufgebracht. In the method according to the invention for producing a power electronic circuit, a heat sink is produced by extrusion, an insulation layer is applied to at least a first surface of the heat sink, an electrically conductive layer is applied to the insulation layer, and at least one power electronic component is applied to the electrically conductive layer.
Die erfindungsgemäße leistungselektronische Schaltung umfasst wenigstens ein leistungselektronisches Halbleiterbauelement, das auf einer elektrisch leitfähigen Schicht aufgebracht ist, wobei die elektrisch leitfähige Schicht auf einer Isolationsschicht angeordnet ist und die Isolationsschicht auf einem Kühlkörper angeordnet ist, wobei der Kühlkörper ein mittels Strangpressung hergestelltes Bauteil ist. The power electronic circuit according to the invention comprises at least one power electronic semiconductor component, which is applied to an electrically conductive layer, wherein the electrically conductive layer is disposed on an insulating layer and the insulating layer is disposed on a heat sink, wherein the heat sink is a manufactured by extrusion component.
Durch die Verwendung von IMS-Leiterpatten (Insulated Metal Substrate) können auch bei höheren Leistungen Standardbauelemente verwendet werden, da trotz der guten Wärmeleitfähigkeit nahezu alle Freiheitsgrade von Standardleiterplatten erhalten bleiben. Auf dieser Basis können optimierte Leistungsteile entwickelt werden die es erlauben, die Preisvorteile des Massenmarktes auch im Hochleistungsbereich zu verwenden. By using IMS Insulated Metal Substrates (PCBs) standard components can be used even at higher outputs, because despite the good thermal conductivity almost all degrees of freedom of standard PCBs are preserved. On this basis optimized power parts can be developed which allow to use the price advantages of the mass market also in the high performance range.
Da IMS-Leiterplatten auch auf Aluminium-Basis aufgebaut werden, ist es vorteilhaft, den IMS-Prozess selbst direkt auf einem Kühler anzuwenden. Hierdurch werden unnötige thermische Übergänge und die zusätzliche Montage von Kühler und Modul eingespart. Im Gegensatz zum Stand der Technik werden so die thermischen Übergänge auf ein Minimum reduziert und der Aufbau des Kühlers drastisch vereinfacht. Since IMS circuit boards are also built on an aluminum basis, it is advantageous to apply the IMS process itself directly to a cooler. This saves unnecessary thermal transitions and the additional installation of cooler and module. In contrast to the prior art, the thermal transitions are reduced to a minimum and drastically simplifies the construction of the cooler.
Für die Erfindung wurde erkannt, dass mittels der Strangpressung der Kühlkörper sehr einfach und kostengünstig herstellbar ist. For the invention it was recognized that by means of the extrusion of the heat sink is very easy and inexpensive to produce.
Vorteilhafte Ausgestaltungen der erfindungsgemäßen Einrichtung gehen aus den von Anspruch 1 abhängigen Ansprüchen hervor. Dabei kann die Ausführungsform nach Anspruch 1 mit den Merkmalen eines der Unteransprüche oder vorzugsweise auch mit denen aus mehreren Unteransprüchen kombiniert werden. Demgemäß können für den Stromwandler noch zusätzlich folgende Merkmale vorgesehen werden:
- – Der Kühlkörper kann aus einem Aluminium aufweisenden Material, insbesondere aus Aluminium, hergestellt werden. Aluminium ist leicht, günstig und gut mittels Strangpressung formbar.
- – Alternativ kann der Kühlkörper aus einem Kupfer oder Magnesium aufweisenden Material, insbesondere aus Kupfer oder Magnesium, hergestellt werden.
- – Es kann eine weitere Isolationsschicht auf eine zweite Oberfläche des Kühlkörpers, die von der ersten Oberfläche verschieden ist, aufgebracht werden und eine weitere elektrisch leitfähige Schicht auf die weitere Isolationsschicht aufgebracht werden. Ferner wird wenigstens ein weiteres leistungselektronisches Bauteil auf die weitere elektrisch leitfähige Schicht aufgebracht. Es wird mit anderen Worten eine weitere Oberfläche des Kühlkörpers für den leistungselektronischen Schaltungsaufbau verwendet. Vorteilhaft steht also mehr Fläche für die Elektronik zur Verfügung.
- – Dabei können die zweite und erste Oberfläche des Kühlkörpers einander entgegengesetzte Oberflächen sein. Somit wird der Kühlkörper also vorder- und rückseitig mit elektronischen Aufbauten versehen. Die doppelseitige Ausnutzung des Kühlkörpers ist besonders einfach möglich, da die Bauelemente nicht auf den Kühler „gepresst“ werden müssen.
- – Der Kühlkörper kann auch so geformt sein, dass er mehr als zwei nutzbare Oberfläche aufweist. Beispielsweise kann der Kühlkörper als Vierkantrohr mit im Wesentlichen quadratischem Querschnitt geformt sein. In diesem Fall weist der Kühlkörper vier nutzbare Oberflächen auf, von denen eine, zwei, drei oder vier Oberfläche für leistungselektronische Aufbauten verwendet werden können. Jede der Oberflächen, die verwendet wird, wird mit einer Isolationsschicht versehen und mit einem oder mehreren leistungselektronischen Bauteilen.
- – Besonders vorteilhaft ist es, wenn der Kühlkörper bei der Strangpressung so geformt wird, dass er einen oder mehrere Kühlkanäle zur Leitung eines Kühlmediums aufweist. Dadurch ist eine besonders einfache Anbindung der Wärmeabführung mittels beispielsweise Wasser möglich, da die Kühlkanäle bereits bei der Fertigung des Kühlkörpers mitgeformt werden.
- – Alternativ oder zusätzlich zu den Kühlkanälen kann der Kühlkörper bei der Strangpressung so geformt werden, dass er Kühlrippen aufweist. Hierdurch wird die Wärmeabfuhr weiter verbessert.
- - The heat sink can be made of an aluminum-containing material, in particular aluminum. Aluminum is light, cheap and well moldable by extrusion.
- - Alternatively, the heat sink can be made of a copper or magnesium-containing material, in particular copper or magnesium.
- It is possible to apply a further insulation layer to a second surface of the heat sink, which differs from the first surface, and to apply a further electrically conductive layer to the further insulation layer. Furthermore, at least one further power electronic component is applied to the further electrically conductive layer. In other words, another surface of the heat sink is used for power electronic circuitry. Advantageously, more space is available for the electronics.
- - In this case, the second and first surface of the heat sink may be opposite surfaces. Thus, the heat sink is therefore front and back provided with electronic structures. The double-sided utilization of the heat sink is particularly easy, since the components do not have to be "pressed" on the radiator.
- The heat sink may also be shaped to have more than two usable surfaces. For example, the heat sink can be shaped as a square tube with a substantially square cross-section. In this case, the heat sink has four usable surfaces, of which one, two, three or four surfaces can be used for power electronic assemblies. Each of the surfaces used is provided with an insulating layer and with one or more power electronic components.
- It is particularly advantageous if the heat sink is formed during extrusion in such a way that it has one or more cooling channels for conducting a cooling medium. As a result, a particularly simple connection of the heat dissipation by means of, for example, water is possible since the cooling channels are already formed during the production of the heat sink.
- - Alternatively or in addition to the cooling channels, the heat sink can be formed in the extrusion so that it has cooling fins. As a result, the heat dissipation is further improved.
Weitere vorteilhafte Ausgestaltungen des Stromwandlers gehen aus den vorstehend nicht angesprochenen Unteransprüchen hervor. Die Erfindung wird nachfolgend an Hand von bevorzugten Ausführungsbeispielen unter Bezugnahme auf die Zeichnung noch weiter erläutert. Dabei zeigen jeweils in schematisierter Form Ein bevorzugtes, jedoch keinesfalls einschränkendes Ausführungsbeispiel für die Erfindung wird nunmehr anhand der Figuren der Zeichnung näher erläutert. Dabei sind die Merkmale schematisiert dargestellt. Es zeigen Further advantageous embodiments of the current transformer will be apparent from the sub-claims not mentioned above. The invention will be explained below with reference to preferred embodiments with reference to the drawings. In each case in a schematic form A preferred, but by no means limiting embodiment of the invention will now be explained in more detail with reference to the figures of the drawing. The features are shown schematically. Show it
Auf einer Oberseite des Kühlkörpers
Auf der Isolationsschicht
Auf der metallischen Schicht
Auf der zweiten metallischen Schicht
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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DE102016218451.2A DE102016218451A1 (en) | 2016-09-26 | 2016-09-26 | Power electronic circuit and method for its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE102016218451.2A DE102016218451A1 (en) | 2016-09-26 | 2016-09-26 | Power electronic circuit and method for its production |
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DE102016218451A1 true DE102016218451A1 (en) | 2018-03-29 |
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DE102016218451.2A Withdrawn DE102016218451A1 (en) | 2016-09-26 | 2016-09-26 | Power electronic circuit and method for its production |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4287801A1 (en) | 2022-06-03 | 2023-12-06 | Dr. Ing. h.c. F. Porsche Aktiengesellschaft | Pulse inverter having a cooling device and motor vehicle having a pulse inverter |
WO2024187842A1 (en) * | 2023-03-10 | 2024-09-19 | 华为数字能源技术有限公司 | Circuit board, circuit board assembly, and electronic device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10140328A1 (en) | 2001-08-16 | 2003-04-03 | Siemens Ag | Cooling device for electronic components has outer surface sections facing away from hollow volume in different directions, to each of which electronic component(s) can be attached |
DE60202476T2 (en) | 2001-06-28 | 2005-12-29 | Lear Automotive (EEDS) Spain, S.L., Valls | PCB WITH AN INSULATED METALLIC SUBSTRATE WITH AN INTEGRATED COOLING SYSTEM |
-
2016
- 2016-09-26 DE DE102016218451.2A patent/DE102016218451A1/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60202476T2 (en) | 2001-06-28 | 2005-12-29 | Lear Automotive (EEDS) Spain, S.L., Valls | PCB WITH AN INSULATED METALLIC SUBSTRATE WITH AN INTEGRATED COOLING SYSTEM |
DE10140328A1 (en) | 2001-08-16 | 2003-04-03 | Siemens Ag | Cooling device for electronic components has outer surface sections facing away from hollow volume in different directions, to each of which electronic component(s) can be attached |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4287801A1 (en) | 2022-06-03 | 2023-12-06 | Dr. Ing. h.c. F. Porsche Aktiengesellschaft | Pulse inverter having a cooling device and motor vehicle having a pulse inverter |
DE102022114113A1 (en) | 2022-06-03 | 2023-12-14 | Dr. Ing. H.C. F. Porsche Aktiengesellschaft | Pulse inverter with a cooling device and motor vehicle with a pulse inverter |
WO2024187842A1 (en) * | 2023-03-10 | 2024-09-19 | 华为数字能源技术有限公司 | Circuit board, circuit board assembly, and electronic device |
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