DE102014227027A1 - Power semiconductor drive - Google Patents

Abstract

The invention relates to an intelligent power component with parallel aligned plates 1, 2, which are connected to the current inputs and the current outputs of power semiconductors 8. Thus, high currents 16, for example, for resistance welding, can be controlled without excessive heat loss.

Description

Technical area

The invention relates to a power component with power semiconductor, which is operable by means of an intelligent control. Power components are used to control high electrical currents, especially kA range electrical currents, such as those needed in industrial processes, powerful machinery and electric vehicles, or resistance welding.

State of the art

The starting point of the invention is an arrangement as in EP1921908B1 shown. The 1 here shows schematically in a side view a circuit arrangement with a generic power module. The power module and the printed circuit board are arranged between a heat sink and a pressing device. There is a desire to use such power modules as universally as possible in a wide variety of applications. For this purpose, the power modules should be compact, easily replaceable and configurable for specific applications.

The object of the invention is therefore the realization of a power device which is built as compact as possible and universally for a variety of applications, in particular the applications mentioned above, easily configurable and retrofittable.

Disclosure of the invention

The starting point of the invention is a power component for controlling an electrical high current.

Under a high current currents are understood, as used for example in resistance welding, for driving servomotors or for the operation of powerful machines or for the operation of vehicles. These are typically currents in the single-digit or double-digit kiloampere range at voltages> 50 volts, preferably from three-phase networks. In particular, there are applications in which a DC link voltage must be provided or a rectification of the current is required, for example, inverters and converters for operating electric motors, including electric vehicle engines.

The power component comprises at least one power semiconductor with a current input, a current output and a control connection. The power component additionally comprises an electrically conductive current input plate and an electrically conductive current output plate, the current input of the power semiconductor being connected to the current input plate and the current output of the power semiconductor being connected to the current output plate. As a plate material is for example copper or molybdenum in question. The current input plate and / or the current output plate may be formed in one piece or in several parts. The control terminal of the power semiconductor is arranged between two plates, which are preferably aligned parallel to one another. In addition, a connection possibility for a drive device from the power component is included, by means of which the control connection can be controlled.

The connection possibility can be realized by connecting means for a control device. The connection means can be realized in such a way that an integration of the drive device in the power component and / or the connection of an example external drive means to the power device is possible.

In order to integrate the drive device, a receiving device for the drive device can be provided between the two plates, for example on a first component carrier which is arranged in an insulated manner between the plates, preferably substantially parallel to the plates. The receiving device can be a base or a recess on the component carrier, by means of which or by means of which the components required for the realization of the drive device / drive device connection can be arranged on the component carrier. The advantage here is that the power device can be realized in a particularly compact and that the control device is protected by the plates from mechanical damage. Also, a drive device is so easy to retrofit or mountable. The control device can also be integrated in the production of the component carrier in this.

However, it would also be conceivable to arrange the drive device on the power component or component carrier in such a way that it is arranged outside the plates or only partially between the plates. The advantage here is that the drive device is easily accessible. For the mechanical protection of the control device, however, additional precautions would have to be taken. For example, a detachable plug connection could also be provided, by means of which the control device can be connected to the power component. Or the drive device may be arranged on a second component carrier, which is connected to the first component carrier.

The connection means could also be implemented as an industrial fieldbus interface (eg SERCOS, Profibus and the like), so that the connection of an external and / or internal control device to the power component is made possible by means of a fieldbus. This drive would then also have a compatible industrial fieldbus interface, z. As an Ethernet interface with appropriate fieldbuses.

The power component can also comprise a combination of the aforementioned connection possibilities, so that both an integrated solution and an external connection can be realized. An integrated drive device could also communicate with an external drive device and / or a higher-level (process) controller by means of the fieldbus interface.

As connecting means between the power semiconductor terminals and the plates joining means can be used, which are electrically conductive and which allow material connections. As a joining process, for example, soldering or sintering, possibly also welding in question. The control terminal is arranged between the two plates such that it has no electrical contact with the plates and remains accessible between the plates.

The power semiconductor may be a current-controlled or voltage-controlled semiconductor, such as a bipolar transistor, an IGBT, a FET or a MOSFET, or the like. The control of the semiconductor can be effected by means of the gate-source voltage. Analogously, the control of semiconductors of other types then takes place according to their data sheets. As power semiconductors also power semiconductors come with a flat (metal) housing in question. The housing protects the power semiconductor and, due to the flat shape, facilitates a flat connection to the plates. This improves the thermal conductivity of the overall arrangement and reduces the losses. The control connection is arranged essentially inside the plates parallel to the plates and can be controlled independently of the current input or current output.

The control device may be an integrated circuit, which preferably has enough computing power and memory available, so that, in addition to the pure control of the power semiconductor, further superordinate tasks for operating the power device can be fulfilled. In addition, external circuits such as drivers or fieldbus interfaces can be provided. However, these external circuits could also be included in the integrated circuit, so that minimal or no external circuitry is required.

Advantages of the invention

Means u. a. the connection means for connection and / or integration of a drive device, the feasibility of a compact and universally applicable power device is guaranteed, which can be operated largely autonomous when using a preferably programmable drive means and thus is easily configurable for a variety of applications. If a programmable control device with sufficient computing power and memory is used, it can be easily reprogrammed for special fields of application or extended in scope, program modules could be recharged or replaced. This could also be done via an internet connection or computer networks (eg cloud).

For example, in a resistance welding application, the power device for the resistance welding process could be optimized to be driven by a first drive program. In an application for the operation of battery-operated electric vehicles, the power component for this application could be optimized with a second drive program. If the power component is used in a supply module, then a corresponding third drive program could be provided. All or individual control programs could be retrievably stored in the memory of the control device or the control device could be implemented such that control programs are easily rechargeable or changeable, for example by means of a fieldbus interface. The mechanical design of the power component simplifies installation in mechanical component holders, such as those used for disc cells. This increases the flexibility in industrial applications, because the power component according to the invention is easily replaceable or easy to retrofit.

Preferably, the plates are connected to each other in their edge region by means of an electrically non-conductive connecting means, wherein plates and connecting means form a housing. As connecting agents, for example, resins in question. Materials made of hard plastic or soft plastic are also suitable. The housing realized by means of the plates and the connecting means surrounds and protects the components encompassed by the power component plates from external influences, in particular the power semiconductor and, in the case of the integrated variant, also the drive device. Especially in adverse environmental conditions - as they often occur in industrial environments - this is a great advantage. Even a splash protection according to the IP protection classes is thus very easy to implement.

If the power semiconductor and / or the drive device are arranged on a component carrier, then this component carrier can be provided substantially parallel between the two plates, wherein the control connection can be connected to a conductor track encompassed by the component carrier. The component carrier may preferably be a printed circuit board (PCB). The component carrier can have plated-through holes (eg so-called VIA's = "Vertical Interconnect Access") to the plates.

Preferably, an arrangement with power component and drive device is realized, wherein the drive means is connected by means of the connection means to the power component. In the case of an integrated solution, the drive device is at least partially, preferably completely, enclosed by the power component. In the case of a non-integrated solution, the control device is mechanically / electrically arranged on the power component or, preferably by means of a fieldbus interface, connected to the power component.

The drive device preferably comprises a drive pulse generation and preferably also a voltage supply for supplying the drive pulse generation. If the power semiconductor and the drive device are arranged on a common component carrier, then the transmission of the drive pulses can take place by means of conductor tracks attached to the component carrier.

Preferably, a fast driver stage is provided which is provided between the output of the drive pulse generation and the control terminal of the power semiconductor to decouple the Ansteuerimpulserzeugung from the control terminal of the power semiconductor and thus this can be controlled in terms of performance in no time. The driver stage can also be encompassed by the drive device or be arranged separately from the drive device, for example, on a common component carrier. By means of this arrangement, a largely self-sufficient operation of the power device is ensured.

When integrating the control device in the power component this can be used without additional higher-level measures, only the power supply must be guaranteed. This can be done depending on the application by means of a DC voltage source or by tapping a transformer coil and rectification of this tapped voltage. The latter is useful, for example, if the power component is used together with a transformer.

Preferably, the drive device and / or the power component is set up to output a status signal for the operating state of the power semiconductor, the power device or the drive device. It is thus possible to report to a higher-level process control a specific for the power device operating condition. Depending on the type of operating state, this process control can then initiate appropriate measures, eg. As interception of errors, initiation of cooling measures in case of overheating and the like. The status signal can be transmitted by means of a proprietary interface or by means of a standard interface (eg fieldbus interface).

The drive device preferably comprises a computing device for processing logic signals which might be required for operation of the power semiconductor and / or for executing programs suitable for the operation of the power device, such as, for example, the realization of lifetime monitoring. In this case, on the basis of the temperatures occurring during operation of the power semiconductor in the power semiconductor, voltages such as forward voltages and currents can be taken into account and compared with reference values. For example, value specifications with tolerance bands or reference values determined on new power semiconductors may be considered as reference values.

The results of these operating modes could also be further processed by a process controller by means of the aforementioned status signal. Especially by means of the lifetime monitoring measures could be taken early to ensure the further and safe operation of the arrangement.

Preferably, in particular also for the realization of the aforementioned lifetime monitoring, the detection device and / or the power component comprise a detection means for acquiring and / or monitoring measured values, in particular values related to the semiconductor temperature and / or to the semiconductor current and / or to the semiconductor voltage and / or or to the semiconductor input voltage.

In addition, the measures mentioned above are preferably expanded by the short circuit monitoring and / or an undervoltage monitoring for the voltage supply and / or the drive pulse generation being included by the drive device and / or the power component. It could also be provided that, depending on the application, external Voltages, such as, for example, a transformer voltage and / or a rectifier voltage and / or a DC link voltage, are additionally monitored and / or evaluated. In addition to the monitoring of the power semiconductor or of the power component itself, external application components would thus additionally be easily monitored with respect to the power component by means of the control device. Application components are components which are application-specific, eg. B. the welding transformer in a resistance welding application.

Particularly preferably, the activation device also includes an avalance monitoring system. This can be used to turn on the power semiconductor before the Avalance energy exceeds a given benchmark. The controlled avalanche behavior of the power semiconductor can be protected from destruction by overvoltages, especially when high currents and low transit times occur.

All these measures serve to ensure a smooth operation of the power component according to the invention, either by means of a higher-level process monitoring or by means of the control device itself.

The drive device or the power component is suitable for establishing a communication connection by means of a field bus with higher-level further devices (eg process control) ,

The above-mentioned status signals and comparison and monitoring results could thus also be transmitted to external devices by means of the fieldbus. A connection of additional components to be monitored to the control device could thus be realized. By means of the field bus interfaces, actual values such as voltages, currents, temperatures and all other values that can be detected by measurement in the power component or power semiconductor could be read out and processed substantially in real time, for example, by a higher-level device (control, process control and the like). An industrial field bus means all devices by means of which data can be exchanged between several bus users, for example also based on the Ethernet standard, preferably in real time. A wireless connection is also conceivable.

Particularly preferably, the drive device is set up to control a plurality of power semiconductors independently of one another, in particular a first power semiconductor independent of a second power semiconductor or a second power semiconductor independently of a first power semiconductor. If a plurality of power semiconductors are present, the above-mentioned measured values with respect to the further power semiconductors, i. H. for each power semiconductor separately and independently, read out, processed and taken into account in the control of the control inputs of each power semiconductor.

The drive device can therefore also be set up to take into account the operating state of a second power semiconductor during the generation of the drive pulses for driving a first power semiconductor.

By means of this measure, operation would also be possible without a higher-level control, which usually coordinates the operation of the power semiconductors. In this case, the control device now takes over the coordination of the drive pulses for the control inputs of a first power semiconductor depending on the operating conditions of at least one other existing power semiconductor. Thus, a completely self-sufficient operation of the power component can be realized even without higher-level control.

Especially in rectifier applications, the drive device could comprise means for realizing a comparison of a transformer voltage and / or a rectifier voltage or the blocking voltage, for example with reference voltages or with the voltages with one another or with additional voltages derived from the voltages.

Thus, a short circuit at the transformer or in a rectifier branch could easily and quickly be detected and reported, for example, by means of the aforementioned status output and / or a field bus connection to a higher-level device. Alternatively, the control device itself could initiate appropriate measures, such as the shutdown of a defective power semiconductor or a rectifier branch.

For the resistance welding application, the forward voltage of the power semiconductor (eg MOSFET) or the switch-on time could be detected. Thus, conclusions about the status of the welding gun are possible at any time (pliers open / closed or contact yes / no).

It is also advantageous in one of the control device or a memory included by the power device application specific data store. In the aforementioned application, for example, data or data relevant to the welding process of the welding tongs could be stored in the memory or made available retrievably. It would also be conceivable to store data of the power component itself in the integrated memory, so that the power component can be easily identified by a higher-level device by reading out the data. Thus, an electronic nameplate for the arrangement would be feasible.

Preferably, a transformer is equipped with a rectifier as described above, wherein the rectifier is connected to a secondary winding of the transformer and comprises of the transformer or is arranged on the transformer.

This arrangement offers, for example in the application resistance welding the advantage that a welding transformer for resistance welding already includes a smart rectifier and can be offered as a kit for resistance welding equipment. Similar kits with or without a transformer are available for other applications, such as servo motor or electric vehicle supply modules.

The supply module operates as an inverter or inverter and may comprise a power component according to the claims for generating a DC link voltage, which can then be reversed.

Also, by means of the solution according to the invention a complete drive device with control device and supply module can be realized. The use of the solution according to the invention for the operation of machines for the production or processing of products is also conceivable.

figure description

1 schematically shows a first embodiment.

2 schematically shows a further embodiment.

3 shows functional blocks of a first drive device.

4 shows functional blocks of a second control device.

5 shows a utility module application.

6 shows a resistance welding application.

1 shows a resistance welding diode with multiple semiconductors 8th , The aforementioned resistance welding diode comprises between both plates 1 . 2 the component carrier 9 in the form of a printed circuit board. The semiconductors 8th each have a metal case 7 connected to the current input of the semiconductor 8th connected is. Preferably comes a housing 7 used, which is the semiconductor 8th at least one-sided protection. The opposite current output 14 of the semiconductor 8th is without housing 7 freely accessible. A control connection 6 is also shown. However, semiconductors are also conceivable 8th without own housing 7 , Importantly, these semiconductors 8th have large current inputs and / or current outputs to reduce losses and power density. In addition, these semiconductors must 8th be suitable for the transmission of high currents in the kA range. As electrically conductive current input plate 1 is a copper plate 1 provided and as an electrically conductive current outlet plate 2 is also a copper plate 2 intended. Alternatively, molybdenum would be considered. The materials chosen should have good thermal and thermal conductivity and thermal expansion similar to that of silicon. The strength of the plates 1 . 2 may, for example, be in the millimeter range (eg 2 mm). In the embodiment shown here, the current input of several MOSFET components 8th with the power input plate 1 and the current output of the components 8th with the current outlet plate 2 connected. Both copper plates 1 . 2 are aligned parallel and at a small distance from each other. As a result, the arrangement is very compact. The current input is with the current input plate 1 directly electrically conductively connected by means of soldering or sintering. For this purpose, the current input of the semiconductor housing 7 solder 15 or sintered paste 15 applied flat. The outside of the semiconductor package 7 facing inner surface of the power input plate 1 is, apart from the contact points for the semiconductor package 7 , with a paint 10 provided, which lot 15 or sintered material 15 repels. The current output is with the current output plate 2 indirectly by means of electrical connection means 14 (VIAS - vertical vias through the PCB 9 ) by means of soldering and / or sintering and / or by means of copper domes (not shown) forming part of the current outlet plate 2 can be electrically connected. Again, a paint 10 be provided. The gate 6 of the components 8th is between the plates 1 . 2 accessible, so that it can be controlled by means of a drive device. The connection means (not shown) for the drive device may be on the component carrier 9 be provided and completely or partially from the plates 1 . 2 be surrounded. The connection means enables integration of the drive device into the power component. Alternatively or additionally, the connection means can also connect to a non-integrated or only partially integrated control device to the Power component provide, for example by means of a fieldbus.

The drive device is capable of the control inputs of all semiconductors 8th preferably by means of a driver (not shown) together or separately to control. The drive device is also capable of individual semiconductors 8th depending on the state of other semiconductors 8th head for.

The parallel and in their edge region flush with each other arranged copper plates 1 . 2 are at least in their edge region by means of an electrically non-conductive plate-connecting means 3 interconnected so that the copper plates 1 . 2 with the connecting means 3 a housing for between the plates 1 . 2 arranged components 6 . 7 . 8th . 9 form. The connecting means 3 may be a potting compound, but it may alternatively be realized by means of a plastic (eg., Hard plastic or soft plastic). Advantage is the achievable mechanical strength of the arrangement with improved heat conduction at reduced thermal expansion and the resulting better protection of the joints 14 . 15 and the semiconductor 8th ,

By means of the bonding agent 3 an arrangement can be realized, which also satisfies the IP protection required for use depending on the application. According to the detail of the 1 (see bottom left) may be on the edge of both copper plates 1 . 2 and at the connection means 3 be provided in form-locking engaging contact points, which a firm contact between connecting means 3 and plates 1 . 2 guarantee. A large-area casting of both plates is unnecessary, and the production is simplified by a few assembly steps.

The current occurring during operation of the device 16 can by means of the control connections 6 be controlled and so the default direction of the power input panel 1 to the current output plate 2 happen. The semiconductors 6 heat generated during operation 5 however, in both directions from the power input panel 1 and the power outlet plate 2 and thus of the semiconductors 8th be taken away yourself. This behavior is intended by means of the arrows shown in the figure 5 be indicated. The behavior is particularly advantageous in resistance welding, where very high currents are used and correspondingly much heat loss must be dissipated.

The picture shows four semiconductors 8th shown. The current inputs of these semiconductors are by means of the copper plate 1 connected with each other. Similarly, the current outputs by means of VIAS 14 and / or by means of the copper plate 2 enclosed copper dome (not shown) using the copper plate 2 connected with each other.

The 2 discloses a similar arrangement as already in 1 shown. Like reference numerals denote like features, unless otherwise indicated by the description and / or the drawing. The main difference to 1 is that the current inputs (eg top or bottom of the semiconductor 8th ) and the current outputs (eg top or bottom of the semiconductors 8th ) by soldering or sintering directly with the copper plates 1 . 2 directly connected (here no VIAS, housing o. Ä.). The control connections 6 are by means of conductors z. B. on a slide or on a rigid support 9 arranged accessible and can by means of a control device 17 be controlled. Another difference to 1 is that both copper plates 1 . 2 each with one with cooling channels 18 interspersed additional cooling plate 11 are connected. These cold plates 11 could also look at the 1 find known variant use. Also could only be a cooling plate 11 at the power input panel 1 or at the power output plate 2 be arranged. In principle, in both variants ( 1 and 2 ) also a power input plate 1 and / or a current output plate 2 with an integrated cooling channel 18 be used so that the separate auxiliary cooling plates 11 would be omitted. The possible variants depend primarily on the power requirement of the use case.

In the edge area on the right in the picture protrudes here by means of a recess in the connecting means 3 (not shown) a circuit board part 12 out of the arrangement. The circuit board part 12 could also be realized by means of a second circuit board (not shown), which with the first circuit board 9 by means of a plug connection 13 could be mechanically and / or electrically connected. This outstanding from the arrangement circuit board 12 includes the drive device 17 for controlling the between the plates 1 . 2 parallel connected semiconductor 8th , The connecting means 3 completes the entire arrangement around at least partially. In the region of the recess, the arrangement is encapsulated, so that the potting compound together with the encircling connection means forms a closure of the arrangement which protects against external adverse influences. When using suitable miniature components, it is also possible the drive device 17 on the first circuit board 9 to attach so that these too from the plates 1 . 2 and the connecting means 3 is completely enclosed. This variant is recommended for serial production of the arrangement. Alternatively or additionally, the attachment of suitable mechanical and / or electrical interfaces, for example, for a fieldbus conceivable (not shown).

Also recommended here is a thin printed circuit board 9 so that the mechanical properties for supporting the semiconductors and for stabilizing the arrangement are just sufficient, the heat dissipation is optimal and the mechanical stresses in the plate 9 minimal when heated.

3 shows roughly schematically the function blocks of the drive device according to the invention (eg reference numerals 17 in 2 ) for rectifier circuits. This can be a power supply 313 themselves, or be associated with such. The power supply 313 can ensure the supply of all or individual components of the power device, for example by means of a DC / DC converter 316 for generating a potential-separated DC voltage for the functions of the power semiconductor and / or by means of a bootstrap circuit 314 from a transformer voltage and / or by means of a transformer auxiliary winding 315 ,

The drive device comprises a drive pulse generation as a central functional unit 319 , this by means of the previously explained power supply 313 can be supplied. The drive pulses may preferably be to a driver module 32 be forwarded, which the control inputs of the power semiconductors 31a . 31b can drive a half bridge shown here only by way of example. This arrangement is not based on the control of only two power semiconductors 31a . 31b limited.

The drive device can also be set up to provide a status signal for the operating state of the power semiconductor by means of a status reporting device 318 issue. In addition, a computing device 33 for processing logic signals and / or for realizing lifetime monitoring for the power semiconductor.

Likewise, a detection means 36 for detecting and / or monitoring measured values, in particular for detecting temperatures, voltages at components, transformers and / or rectifiers and / or semiconductors, or for detecting currents at or in the installed components. All in all, the means of detection 36 ensure the recording of all conceivable and metrologically detectable actual values, which can occur during operation of the power device. In addition, a short-circuit monitoring and / or undervoltage monitoring 38 for the power supply 313 and / or the drive pulse generation 319 be provided. Likewise, an Avalance monitoring 39 and a second additional temperature control 310 be provided.

By means of these measures, an intensive monitoring of the internal processes of the power component is made possible. By way of example, the power component can transmit its own operating state in real time to higher-level locations or make it available for retrieval in the context of an application-specifically implemented condition monitoring. A functional block 317 For error generation or generation of error signals, the aforementioned monitoring can usefully supplement. Coolant media can be monitored and the functions of temperature switches can be realized based on this monitoring.

Further shown is a function block 37 , which allows identification of the power device, as well as a functional block 312 for providing or storing application-specific data, e.g. B. of welding tongs data, as well as a function block 311 for providing or storing application-specific data, e.g. B. welding data such as welding process data. It may also include a function that realizes the targeted query of such data.

The communication of the monitoring results is facilitated by means of a separate or from the power component or the control device included fieldbus interface 34 for connecting the control device or the power component to an industrial fieldbus. This fieldbus interface is preferably based 34 on the Ethernet standard, such as the SERCOS fieldbus, or on a wireless fieldbus standard. By means of a connection 35 can the power component or the control device to a higher-level control by means of the fieldbus interface 34 be connected. Process data (identification data, temperatures, actual current values, voltage actual values and the like) or the aforementioned collected data and / or the data of several power semiconductors can be transmitted or retrieved without high wiring costs.

Also, the drive means may be adapted to drive a first power semiconductor 31a and or 31b the operating state of another power semiconductor 321 optional to consider. The drive device can be set up to control the terminals of several power semiconductors 321 . 31a . 31b independently of each other and preferably initiate temperature-dependent switching operations 320 , The control device here is particularly suitable for the realization of power converters of all kinds, in particular based on full bridge circuits, half bridge circuits or center point circuits.

Depending on the application, the functional blocks shown in this figure may be completely or partially or in any desired combination of the power component and / or the control device, for example also in the form of programs executable on a computer. Some functional blocks like drivers 32 and / or power supply 313 or the fieldbus interface 34 can also be implemented as additional external components to the drive device. However, all components described here are preferably comprised by an integrated circuit, which represents the drive device.

The integrated circuit with / without external wiring is preferably on the in the 1 and 2 shown component carrier 9 arranged and preferably between the plates 1 . 2 intended.

4 shows roughly schematically the functional blocks of the drive device according to the invention, which is designed for the purpose of controlling an inverter. The associated inverter is in 5 shown. The function blocks shown here correspond to those in 3 explained function blocks with identical reference numerals. It is based on their description in the context of 3 directed. The reference numerals 51a to f are at 5 explained.

5 shows a section of a supply module for a three-phase servomotor 524 , preferably with position detection (not shown). The power semiconductors used in the three half-bridges shown 51a , d and 51b , e as well 51c , f can by means of the power components according to the invention according to the 1 and 2 be realized with appropriate description. The half bridges can be connected to a DC voltage intermediate circuit (+/-).

6 shows as an example of application a resistance welding system comprising a welding control 60 , a welding tongs 61 with welding transformer 62 and rectifier 63 , The rectifier 63 and the transformer 62 form a compact and of the pliers 61 separate unit because of the rectifier 63 at the transformer 62 usually already before mounting on the pliers 61 is arranged. The transformer 62 or rectifier 63 comprises as claimed the solution according to the invention and is here by means of a wired Ethernet connection 64 via SERCOS III protocol with the welding control 60 connected. Wireless solutions would also be possible.

All in the 1 to 6 The features shown can also be expertly summarized in a modified form for the realization of alternative embodiments. Also, alternative embodiments may include additional features mentioned in the description, which are not shown or mentioned in the description of the figures. The application examples shown here are not intended to represent any limitation on the use cases realizable by means of the invention. For example, a power component according to the invention can be integrated into a wide variety of rectifier applications and electronic circuits (full bridge, half bridge, center point circuit).

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• EP 1921908 B1 [0002]

Claims (13)

Power component for controlling an electric power current ( 16 ), comprising a power semiconductor ( 8th ) with current input, current output and control connection ( 6 ) comprising an electrically conductive current input plate ( 1 ) and comprising an electrically conductive current outlet plate ( 2 ), wherein the current input of the power semiconductor ( 8th ) with the power input plate ( 1 ) and the current output of the power semiconductor ( 8th ) with the current outlet plate ( 2 ), the control terminal ( 6 ) between the plates ( 1 . 2 ) and wherein a connection means for a drive device ( 17 ) by means of which the control connection ( 6 ) is controllable, wherein the connection means an integration of the drive device in the power component and / or the connection of the drive device ( 17 ) to the power component. Power component according to claim 1, wherein by means of the connection means a drive device ( 17 ), which generates a drive pulse generation ( 319 ) and preferably a power supply ( 313 . 314 . 315 . 316 ) is connected to or connected to such, wherein the power supply ( 313 . 314 . 315 . 316 ) also for the supply of the drive pulse generation ( 319 ) is set up. Power component according to claim 2, wherein the drive device ( 17 ) or the power component is set up a status signal for the operating state of the power component or the power semiconductor ( 8th ) or the control device ( 17 ). Power component according to one of the preceding claims 2 or 3, wherein the drive device ( 17 ) a computing device ( 33 ) for processing logic signals and / or the execution of programs such as a condition monitoring or a lifetime monitor for the power semiconductor. Power component according to one of the preceding claims 2 to 4, wherein the drive device ( 17 ) a detection means ( 36 ) for detecting and / or monitoring measured values, in particular with regard to temperatures and / or currents and / or voltages on or in the power semiconductor ( 8th ) or power component or other components included in the power component. Power component according to one of the preceding claims 2 to 5, wherein the drive device ( 17 ) a short circuit monitoring and / or an undervoltage monitoring ( 38 ) is included. Power component according to one of the preceding claims 2 to 6, wherein the drive device ( 17 ) an avalance monitoring ( 39 ) is included. Power component according to one of the preceding claims 2 to 7, wherein the drive device ( 17 ) or the power component a fieldbus interface ( 34 ) for the connection of the control device ( 17 ) or the power device to an industrial fieldbus, preferably an Ethernet standard based fieldbus such as the SERCOS fieldbus or a wireless fieldbus. Power component according to one of the preceding claims, wherein the drive device ( 17 ) the control terminals of several power semiconductors ( 8th ) independently of each other. Power component according to one of the preceding claims, wherein the drive device ( 17 ) is set up for the activation of a first power semiconductor ( 8th ) the operating state of a second power semiconductor ( 8th ). Power converter, in particular rectifier, comprising a power component according to one of the preceding claims. Transformer, in particular welding transformer for resistance welding, with power converter according to claim 11, wherein the power converter is connected to a secondary winding of the transformer. Device, in particular device, automation component, machine or vehicle, in particular electric vehicle, resistance welding device, supply module for servomotors, comprising a transformer according to claim 12 and / or a power converter according to claim 11.

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