DE102007001107A8 - Schaltungsanordnung mit einem Leistungstransistor und mit dessen Ansteuerschaltung - Google Patents
Schaltungsanordnung mit einem Leistungstransistor und mit dessen Ansteuerschaltung Download PDFInfo
- Publication number
- DE102007001107A8 DE102007001107A8 DE102007001107A DE102007001107A DE102007001107A8 DE 102007001107 A8 DE102007001107 A8 DE 102007001107A8 DE 102007001107 A DE102007001107 A DE 102007001107A DE 102007001107 A DE102007001107 A DE 102007001107A DE 102007001107 A8 DE102007001107 A8 DE 102007001107A8
- Authority
- DE
- Germany
- Prior art keywords
- power transistor
- circuit
- drive circuit
- circuit arrangement
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/18—Modifications for indicating state of switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007001107A DE102007001107B4 (de) | 2007-01-04 | 2007-01-04 | Schaltungsanordnung mit einem Leistungstransistor und mit dessen Ansteuerschaltung |
US11/968,853 US9425784B2 (en) | 2007-01-04 | 2008-01-03 | Circuit having a power transistor and a drive circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007001107A DE102007001107B4 (de) | 2007-01-04 | 2007-01-04 | Schaltungsanordnung mit einem Leistungstransistor und mit dessen Ansteuerschaltung |
Publications (3)
Publication Number | Publication Date |
---|---|
DE102007001107A1 DE102007001107A1 (de) | 2008-07-10 |
DE102007001107A8 true DE102007001107A8 (de) | 2008-10-16 |
DE102007001107B4 DE102007001107B4 (de) | 2009-06-10 |
Family
ID=39477657
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102007001107A Expired - Fee Related DE102007001107B4 (de) | 2007-01-04 | 2007-01-04 | Schaltungsanordnung mit einem Leistungstransistor und mit dessen Ansteuerschaltung |
Country Status (2)
Country | Link |
---|---|
US (1) | US9425784B2 (de) |
DE (1) | DE102007001107B4 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9939827B1 (en) * | 2011-12-16 | 2018-04-10 | Altera Corporation | Temperature dependent power supply circuitry |
US8854065B2 (en) * | 2012-01-13 | 2014-10-07 | Infineon Technologies Austria Ag | Current measurement in a power transistor |
US9728580B2 (en) * | 2013-05-13 | 2017-08-08 | Infineon Technologies Ag | Power transistor with integrated temperature sensor element, power transistor circuit, method for operating a power transistor, and method for operating a power transistor circuit |
DE102016104256B3 (de) * | 2016-03-09 | 2017-07-06 | Infineon Technologies Ag | Transistorzellen und Kompensationsstruktur aufweisende Halbleitervorrichtung mit breitem Bandabstand |
US10965281B2 (en) * | 2017-09-25 | 2021-03-30 | Dialog Semiconductor (Uk) Limited | Circuit based on a III/V semiconductor and a method of operating the same |
DE202018104567U1 (de) | 2018-08-08 | 2019-11-11 | Judo Wasseraufbereitung Gmbh | Wasseranschluss-Bauteil für wenigstens eine regenerierbare Wasserbehandlungseinheit |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5543632A (en) * | 1991-10-24 | 1996-08-06 | International Business Machines Corporation | Temperature monitoring pilot transistor |
US5656960A (en) * | 1995-05-30 | 1997-08-12 | National Semiconductor Corporation | Controlled slope output buffer |
DE10346307B3 (de) * | 2003-10-06 | 2004-12-30 | Infineon Technologies Ag | Verfahren zum schaltenden Ansteuern eines Halbleiterschaltelements |
DE102005014725B3 (de) * | 2005-03-31 | 2006-08-17 | Infineon Technologies Ag | Schutzanordnung für Leistungshalbleiterbauelement gegen Überstrom und Übertemperatur |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4276812B2 (ja) * | 2002-03-20 | 2009-06-10 | 株式会社リコー | 温度検出回路 |
GB0222553D0 (en) * | 2002-09-28 | 2002-11-06 | Koninkl Philips Electronics Nv | A semiconductor device with sense structure |
GB2404505B (en) * | 2003-07-31 | 2006-04-19 | Zetex Plc | A temperature dependent switching circuit |
JP5028748B2 (ja) * | 2005-04-15 | 2012-09-19 | 富士電機株式会社 | パワー半導体デバイスの温度計測装置 |
JP4768339B2 (ja) * | 2005-07-15 | 2011-09-07 | 株式会社リコー | 温度検出回路およびそれを用いた発振周波数補正装置 |
US7301746B2 (en) * | 2005-09-21 | 2007-11-27 | Texas Instruments Incorporated | Thermal shutdown trip point modification during current limit |
-
2007
- 2007-01-04 DE DE102007001107A patent/DE102007001107B4/de not_active Expired - Fee Related
-
2008
- 2008-01-03 US US11/968,853 patent/US9425784B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5543632A (en) * | 1991-10-24 | 1996-08-06 | International Business Machines Corporation | Temperature monitoring pilot transistor |
US5656960A (en) * | 1995-05-30 | 1997-08-12 | National Semiconductor Corporation | Controlled slope output buffer |
DE10346307B3 (de) * | 2003-10-06 | 2004-12-30 | Infineon Technologies Ag | Verfahren zum schaltenden Ansteuern eines Halbleiterschaltelements |
DE102005014725B3 (de) * | 2005-03-31 | 2006-08-17 | Infineon Technologies Ag | Schutzanordnung für Leistungshalbleiterbauelement gegen Überstrom und Übertemperatur |
Also Published As
Publication number | Publication date |
---|---|
DE102007001107A1 (de) | 2008-07-10 |
DE102007001107B4 (de) | 2009-06-10 |
US20080164497A1 (en) | 2008-07-10 |
US9425784B2 (en) | 2016-08-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ON | Later submitted papers | ||
OP8 | Request for examination as to paragraph 44 patent law | ||
8181 | Inventor (new situation) |
Inventor name: BORCKE, MATHIAS, DR., VON, 81545 MUENCHEN, DE |
|
8196 | Reprint of faulty title page (publication) german patentblatt: part 1a6 | ||
ON | Later submitted papers | ||
OP8 | Request for examination as to paragraph 44 patent law | ||
8364 | No opposition during term of opposition | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |