DE102006024175B3 - Light emitting diode primary multi-layer electrodes manufacturing method for e.g. backlight, involves masking epitaxial substrate with magnetizable mask that is hold by magnet, where magnetizable mask has contact windows - Google Patents
Light emitting diode primary multi-layer electrodes manufacturing method for e.g. backlight, involves masking epitaxial substrate with magnetizable mask that is hold by magnet, where magnetizable mask has contact windows Download PDFInfo
- Publication number
- DE102006024175B3 DE102006024175B3 DE200610024175 DE102006024175A DE102006024175B3 DE 102006024175 B3 DE102006024175 B3 DE 102006024175B3 DE 200610024175 DE200610024175 DE 200610024175 DE 102006024175 A DE102006024175 A DE 102006024175A DE 102006024175 B3 DE102006024175 B3 DE 102006024175B3
- Authority
- DE
- Germany
- Prior art keywords
- mask
- magnetizable
- epitaxial substrate
- magnet
- contact windows
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title description 11
- 230000000873 masking effect Effects 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 22
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002253 acid Substances 0.000 claims abstract description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 4
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 5
- 239000011888 foil Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- 229910002651 NO3 Inorganic materials 0.000 claims description 3
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001256 stainless steel alloy Inorganic materials 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 238000001459 lithography Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum-iron-boron Chemical compound 0.000 description 1
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229910001954 samarium oxide Inorganic materials 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical class [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Technisches Gebiettechnical area
Die Erfindung betrifft ein Verfahren zur Herstellung von primären Mehrschichtelektroden.The The invention relates to a process for the production of primary multilayer electrodes.
Stand der TechnikState of technology
Die Leuchtdiode ist ein elektronisches Festkörperelement mit einer P- und N-Elektrode. Wenn ein kleiner Strom durch die beiden Elektroden fließt, kann die Leuchtdiode leuchten. Da die Leuchtdiode durch die Rekombination von Elektronen und Löchern ein Licht erzeugt, das zu einem Kaltlicht gehört, ist die Leuchtdiode durch ein kleines Volumen, einen niedrigen Stromverbrauch, eine hohe Zuverlässigkeit und eine lange Lebensdauer gekennzeichnet. Daher wird die Leuchtdiode für z.B. Anzeigelampe, Hintergrundlicht usw. verwendet. Die Leuchtdiode weist üblicherweise ein Zweielement-Substrat, wie GaP-Substrat, oder ein Dreielement-Substrat, wie GaAsP-Substrat, und sogar ein Vierelement-Substrat, wie AlInGaP-Substrat, auf.The LED is an electronic solid state element with a P and N-electrode. If a small current through the two electrodes flows, can the LED lights up. Because the light-emitting diode through the recombination of electrons and holes generates a light that belongs to a cold light, the LED is through a small volume, low power consumption, high reliability and characterized a long life. Therefore, the light emitting diode for e.g. Indicator lamp, backlight, etc. used. The light-emitting diode usually has a two-element substrate, such as a GaP substrate, or a three-element substrate, such as GaAsP substrate, and even a four-element substrate, such as AlInGaP substrate, on.
Das Substrat der Leuchtdiode wird in der Regel nach dem Epitaxieverfahren hergestellt. Auf dem Substrat werden die Mehrschichtelektroden hergestellt. Wie ausThe Substrate of the light-emitting diode is usually after the Epitaxieverfahren produced. On the substrate, the multi-layer electrodes are produced. How out
Aus der US 2005/0191572 A1 ist eine magnetische Maske für strukturiertes Abscheiden für LCD, RFID, TFT's und OLED's bekannt, wobei als Abscheidesubstrate neben Glassubstraten auch Silizium erwähnt ist und als Abscheidematerialien neben Halbleitern und Dielektrika auch Leiter genannt sind. Um das Durchhängen der Maske zu vermeiden, soll die magnetische Maske durch einen Magneten an das Abscheidesubstrat angehalten werden.Out US 2005/0191572 A1 is a structured magnetic mask Depositing for LCD, RFID, TFT's and OLED's known wherein as deposition substrates in addition to glass substrates and silicon mentioned is and as deposition materials in addition to semiconductors and dielectrics also called ladder. To avoid sagging the mask, the magnetic mask is to be applied to the deposition substrate by a magnet be stopped.
Aus
der
Dokument US 2002/0025406 A1 betrifft das Anpressen von Abdeckmasken an Halbleiterplatten bei Bedampfungsvorgängen. Hierzu ist eine Nickelmaske, gegen die eine Halbleiterplatte mittels Federn gehalten wird, sowie eine weitere Halterung und ein Magnet vorgesehen.document US 2002/0025406 A1 relates to the pressing of Abdeckmasken on semiconductor plates at Bedampfungsvorgängen. For this purpose, a nickel mask, against which a semiconductor plate by means Springs is held, as well as another bracket and a magnet intended.
Dokument
Dokument
Dokument
Dokument JP 04-137620 A betrifft ein Verfahren zum Herstellen von Elektroden für LED's. Nach dem Ablagern von n- und p-Schichten sowie AuGe, Auge, Ti und Au wird das Werkstück mit einer Maske überzogen, die nur diejenigen Flächen frei lässt, an denen Elektroden verbleiben sollen. Anschließend wird das Werkstück in einer Stickstoffatmosphäre wärmebehandelt. Danach wird das Ti nitriert.document JP 04-137620 A relates to a method for producing electrodes for LED's. After depositing of n- and p-layers and AuGe, eye, Ti and Au, the workpiece is covered with a mask, the only ones surfaces free, where electrodes should remain. Subsequently, the workpiece is in one nitrogen atmosphere heat treated. Thereafter, the Ti is nitrided.
Aufgabe der Erfindungtask the invention
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren zur Herstellung von primären Mehrschichtelektroden zu schaffen, das auf eine Lithographie und ein Nassätzen verzichtet, wodurch der Herstellungsprozess vereinfacht wird, so dass die Herstellungskosten erheblich reduziert sind.Of the Invention is based on the object, a process for the preparation from primary To create multilayer electrodes, which are based on lithography and a wet etching omitted, whereby the manufacturing process is simplified, so that the production costs are considerably reduced.
Diese Aufgabe wird durch ein Verfahren der o.g. Art mit den in Anspruch 1 angegebenen Verfahrensschritten gelöst.These Task is performed by a method of o.g. Kind of claim 1 specified method steps solved.
Hierzu sind erfindungsgemäß folgende Verfahrensschritte vorgesehen:
- (a) das Epitaxiesubstrat wird gereinigt,
- (b) das Epitaxiesubstrat wird in einen Halter eingebracht und mit einer magnetisierbaren Maske, die Kontaktfenster aufweist, abgedeckt, wobei die magnetisierbare Maske durch einen Magneten gehalten wird,
- (c) auf dem Epitaxiesubstrat wird eine primäre Metallschichtfolge aus unterschiedlichen Metallquellen aufgedampft, wodurch in den Kontaktfenstern jeweils eine Mehrschichtelektrode gebildet ist, und
- (d) die Maske wird entfernt.
- (a) the epitaxial substrate is cleaned,
- (b) the epitaxial substrate is placed in a holder and covered with a magnetizable mask having contact windows, the magnetizable mask being held by a magnet,
- (c) a primary metal layer sequence of different metal sources is vapor-deposited on the epitaxial substrate, whereby a multi-layer electrode is formed in each of the contact windows, and
- (d) the mask is removed.
Die magnetisierbare Maske haftet durch die Anziehungskraft des Magnetes auf dem Epitaxiesubstrat, wodurch das Epitaxiesubstrat stabil in dem Halter liegt. Nach dem Aufdampfen bzw. nach Schritt (d) wird eine Wärmebehandlung durchgeführt, damit zwischen dem Epitaxiesubstrat und den Mehrschichtelektroden ein ohmscher Kontakt entsteht.The magnetizable mask adheres to the attraction of the magnet on the epitaxial substrate, whereby the epitaxial substrate is stable in the holder lies. After vapor deposition or after step (d) is a heat treatment carried out, thus between the epitaxial substrate and the multilayer electrodes an ohmic contact is created.
Zweckmäßigerweise wird das Epitaxiesubstrat mit Chemikalien, wie Säure oder Alkalie, gereinigt.Appropriately, The epitaxial substrate is cleaned with chemicals such as acid or alkali.
Die Chemikalien sind beispielsweise Schwefelsäure, Nitrat, Wasserstoffsuperoxydlösung, Phosphorsäure und Salzsäure.The Chemicals include sulfuric acid, nitrate, hydrogen peroxide solution, phosphoric acid and Hydrochloric acid.
In einer bevorzugten Weiterbildung der Erfindung wird das Epitaxiesubstrat in einen Ofen von 300°C bis 1000°C eingebracht und für 5 bis 50 Minuten erwärmt, damit zwischen dem Epitaxiesubstrat und den Mehrschichtelektroden ein ohmscher Kontakt entsteht.In A preferred embodiment of the invention is the epitaxial substrate in an oven of 300 ° C up to 1000 ° C introduced and for Heated for 5 to 50 minutes, thus between the epitaxial substrate and the multilayer electrodes an ohmic contact is created.
Die magnetisierbare Maske ist bevorzugt eine magnetisierbare, nichtrostende Stahl- oder Nickeleisenlegierungsfolie.The Magnetizable mask is preferably a magnetizable, stainless Steel or nickel-iron alloy foil.
Die magnetisierbare Maske besitzt eine Dicke von beispielsweise 10 μm bis 300 μm, insbesondere von 30 μm.The magnetizable mask has a thickness of, for example, 10 microns to 300 microns, in particular of 30 μm.
Die Metallquellen enthalten bevorzugt flüssiges Auge, Ti und Au, wobei die Metallquellen Auge, Ti und Au nacheinander auf dem Epitaxiesubstrat abgeschieden und dann mit einer obersten Au-Metallschicht abgedeckt werden.The Metal sources preferably contain liquid eye, Ti and Au, wherein the metal sources eye, Ti and Au successively on the epitaxial substrate deposited and then covered with a top Au metal layer become.
Kurze Beschreibung der Zeichnungenshort Description of the drawings
Wege zur Ausführung der ErfindungWays to execute the invention
Die Erfindung betrifft ein Verfahren zum Herstellen von primären Mehrschichtelektroden, das auf eine Lithographie und ein Nassätzen verzichtet und einen Halter in Verbindung mit einem Magnet und einer magnetisierbaren Maske verwendet.The The invention relates to a method for producing primary multilayer electrodes, that dispenses with lithography and wet etching and a holder in conjunction with a magnet and a magnetizable mask used.
Anschließend wird das Epitaxiesubstrat in einen Halter eingebracht und mit einer magnetisierbaren Maske abgedeckt (Schritt (b)). Danach wird eine primäre Metallschichtfolge auf dem Epitaxiesubstrat aufgedampft (Schritt (c)). Schließlich wird die magnetisierbare Maske und der Halter entfernt (Schritt (d)). Dadurch werden die Mehrschichtelektroden erhalten (Schritt (e)).Subsequently, will placed the epitaxial substrate in a holder and with a magnetizable Mask covered (step (b)). Thereafter, a primary metal layer sequence deposited on the epitaxial substrate (step (c)). Finally will the magnetizable mask and holder are removed (step (d)). Thereby the multilayer electrodes are obtained (step (e)).
Da die Metallquellen fast vertikal über dem Epitaxiesubstrat liegen, wird auf dem Epitaxiesubstrat eine homogene Metallschicht abgeschieden. Dafür kann die Länge und Breite der Prozesskammer vergrößert oder der Bogengrad des Schiffchens verkleinert werden, damit die Metallquellen vertikal auf dem Epitaxiesubstrat abgeschieden werden.There the metal sources almost vertically over the epitaxial substrate is on the epitaxial substrate a deposited homogeneous metal layer. This can be the length and Width of the process chamber enlarged or the bow degree of the shuttle will be reduced so that the metal sources be deposited vertically on the epitaxial substrate.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200610024175 DE102006024175B3 (en) | 2006-05-23 | 2006-05-23 | Light emitting diode primary multi-layer electrodes manufacturing method for e.g. backlight, involves masking epitaxial substrate with magnetizable mask that is hold by magnet, where magnetizable mask has contact windows |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200610024175 DE102006024175B3 (en) | 2006-05-23 | 2006-05-23 | Light emitting diode primary multi-layer electrodes manufacturing method for e.g. backlight, involves masking epitaxial substrate with magnetizable mask that is hold by magnet, where magnetizable mask has contact windows |
Publications (1)
Publication Number | Publication Date |
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DE102006024175B3 true DE102006024175B3 (en) | 2007-09-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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DE200610024175 Expired - Fee Related DE102006024175B3 (en) | 2006-05-23 | 2006-05-23 | Light emitting diode primary multi-layer electrodes manufacturing method for e.g. backlight, involves masking epitaxial substrate with magnetizable mask that is hold by magnet, where magnetizable mask has contact windows |
Country Status (1)
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DE (1) | DE102006024175B3 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013208223A1 (en) * | 2013-05-06 | 2014-11-06 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic component |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1160107B (en) * | 1961-03-04 | 1963-12-27 | Intermetall | Method for pressing masking masks onto semiconductor plates for the production of semiconductor components |
GB1010984A (en) * | 1963-08-28 | 1965-11-24 | Siemens Ag | Improvements in or relating to semiconductor devices |
DE1287400B (en) * | 1965-03-02 | 1973-09-13 | ||
US4915057A (en) * | 1985-10-23 | 1990-04-10 | Gte Products Corporation | Apparatus and method for registration of shadow masked thin-film patterns |
JPH04137620A (en) * | 1990-09-28 | 1992-05-12 | Victor Co Of Japan Ltd | Formation method for electrode |
US20020025406A1 (en) * | 2000-08-25 | 2002-02-28 | Nec Corporation | Metal mask structure and method for maufacturing thereof |
US20050191572A1 (en) * | 2002-02-14 | 2005-09-01 | 3M Innovative Properties Company | Aperture masks for circuit fabrication |
-
2006
- 2006-05-23 DE DE200610024175 patent/DE102006024175B3/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1160107B (en) * | 1961-03-04 | 1963-12-27 | Intermetall | Method for pressing masking masks onto semiconductor plates for the production of semiconductor components |
GB1010984A (en) * | 1963-08-28 | 1965-11-24 | Siemens Ag | Improvements in or relating to semiconductor devices |
DE1287400B (en) * | 1965-03-02 | 1973-09-13 | ||
US4915057A (en) * | 1985-10-23 | 1990-04-10 | Gte Products Corporation | Apparatus and method for registration of shadow masked thin-film patterns |
JPH04137620A (en) * | 1990-09-28 | 1992-05-12 | Victor Co Of Japan Ltd | Formation method for electrode |
US20020025406A1 (en) * | 2000-08-25 | 2002-02-28 | Nec Corporation | Metal mask structure and method for maufacturing thereof |
US20050191572A1 (en) * | 2002-02-14 | 2005-09-01 | 3M Innovative Properties Company | Aperture masks for circuit fabrication |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013208223A1 (en) * | 2013-05-06 | 2014-11-06 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic component |
US9911905B2 (en) | 2013-05-06 | 2018-03-06 | Osram Opto Semiconductors Gmbh | Method of producing an optoelectronic component |
DE102013208223B4 (en) | 2013-05-06 | 2021-09-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Method for producing an optoelectronic component |
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Legal Events
Date | Code | Title | Description |
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8364 | No opposition during term of opposition | ||
R082 | Change of representative | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |