CN2888786Y - Novel planar linear array radiation heater which can resist active oxygen corrosion - Google Patents
Novel planar linear array radiation heater which can resist active oxygen corrosion Download PDFInfo
- Publication number
- CN2888786Y CN2888786Y CN 200620003832 CN200620003832U CN2888786Y CN 2888786 Y CN2888786 Y CN 2888786Y CN 200620003832 CN200620003832 CN 200620003832 CN 200620003832 U CN200620003832 U CN 200620003832U CN 2888786 Y CN2888786 Y CN 2888786Y
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- China
- Prior art keywords
- heating wire
- active oxygen
- heater
- support plate
- linear array
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 15
- 239000001301 oxygen Substances 0.000 title claims abstract description 15
- 230000005855 radiation Effects 0.000 title claims abstract description 15
- 230000007797 corrosion Effects 0.000 title claims abstract description 11
- 238000005260 corrosion Methods 0.000 title claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 239000011888 foil Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000004804 winding Methods 0.000 claims abstract description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 15
- 230000012010 growth Effects 0.000 abstract description 11
- 229910002804 graphite Inorganic materials 0.000 abstract description 10
- 239000010439 graphite Substances 0.000 abstract description 10
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- 238000012423 maintenance Methods 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 11
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
本实用新型公开了一种耐活性氧腐蚀的新型平面线阵辐射加热器，它包括：加热丝支撑盘、加热丝和金属箔电极，加热丝支撑盘上分布有具一定几何排布规律绕线孔阵列，加热丝按照一定绕线规则穿过绕线孔阵列绕至支撑盘上，在支撑盘两端边缘对称分布有两个接线柱插孔，加热丝端线在此与金属箔电极相连形成良好电接触。本实用新型能提供高于800℃加热温度，且温场均匀。与传统加热丝型加热器相比，由于采用合理几何设计，具有最少的部件，使用及维护成本很低；与商用石墨体加热器相比，使用寿命长，且无碳污染，因此非常适宜氧化物薄膜的生长。
The utility model discloses a novel planar linear array radiation heater resistant to active oxygen corrosion, which comprises: a heating wire support plate, a heating wire and a metal foil electrode, and the heating wire support plate is distributed with winding wires with a certain geometric arrangement rule. Hole array, the heating wire passes through the winding hole array and winds to the support plate according to certain winding rules. There are two terminal sockets symmetrically distributed on both ends of the support plate, where the end line of the heating wire is connected with the metal foil electrode to form a good electrical contact. The utility model can provide a heating temperature higher than 800 DEG C, and the temperature field is uniform. Compared with traditional heating filament heaters, due to the rational geometric design, it has a minimum of parts, and the cost of operation and maintenance is very low; compared with commercial graphite body heaters, it has a long service life and no carbon pollution, so it is very suitable for oxidation growth of thin films.
Description
Technical field
The utility model relates to employed heater in a kind of high vacuum thin film growth process, especially uses the employed single resistance wire planar radiation linear array heater of radio-frequency plasma molecular beam epitaxy technology growing oxide film.
Background technology
In the vacuum film growth technology, (comprise vacuum vapour deposition, magnetron sputtering method, pulse laser method, chemical vapour deposition technique etc.), will heat so that be adsorbed to the atom acquisition of substrate surface substrate usually and enough move energy to obtain high-quality thin film.Particularly for using RF-MBE (radio-frequency plasma molecular beam epitaxy) growth refractory oxide film, must use sufficiently high growth temperature also at high temperature to anneal and improve into thin quality with further with the atomic layered growth pattern of assurance film.Because RF-MBE technology growth sull is under the active oxygen atom environment, heater is easier to be oxidized under the condition of high temperature, thereby influences the useful life and the efficiency of heating surface greatly simultaneously.Therefore, when being designed for the vacuum growing technology and preparing the heater of sull, must consider following factor:
1. can satisfy the required hot conditions of film growth;
2. heter temperature good uniformity, the temperature-controlled precision height;
3. long service life under the oxygen environment, good stability;
4. material therefor evaporation capacity when high temperature is few, pollutes little to film growth.
In addition, heater is satisfying on the performance outside the above-mentioned requirements, also must take all factors into consideration the simplification of use cost and maintenance.
The mode of heating kind that is used for film growth at present is more, as the Halogen lamp LED heating, and LASER HEATING and resistance-type heating etc., these methods differ from one another, but use maximum still resistance type heaters.It is big that resistance type heater has heating surface (area) (HS, and thermal uniformity is good, advantages such as heating-up temperature wide ranges.Can be divided into the resistive element heating by mode of heating, as patent 98101216.7 (metal plate heater of using in the preparation film apparatus), (95224595.7 being used to prepare the monocrystalline silicon radiant heater of two-side film membrane), (98101016.7 graphite body heater) and resistance wire heating, as patent 03263585.0 (heater in the hot filament chemical vapor deposition unit) and 200510088871.4 (novel plane radiation heaters), though satisfying, these heater types obtain higher temperature and warm field uniformity requirement, but be specifically designed to high vacuum oxide film growth environment and aspect the working service cost, still have big limitation.As metal plate heater as described in the patent 98101216.7, because metallic resistance is very little, its heater must use special strong current transformer, and (15V 500A) could obtain very high heating-up temperature.And patent 95224595.7 described monocrystalline silicon panel heaters are easy to be oxidized to the silicon oxide layer of insulation in the surface when using under the oxygen environment, cause electrode contact insulation to use, must under vacuum environment, at first prepare good contact electrode and should guarantee also that simultaneously electrode material can not pollute the high vacuum growing environment under hot conditions.Patent 03263585.0 and 200510088871.4 described resistance wire type heaters adopt many resistance wires and complicated support frame structure, all have sizable difficulty in processing and aspect safeguarding.
The employed graphite body heater of present commercial molecular beam epitaxy system heater is by being processed into circular graphite flake as shown in Figure 1 structure to obtain bigger resistance and temperature homogeneity.But in the active oxygen environment, graphite is easy to be oxidized into carbon dioxide, and experiment shows that under the active oxygen environment residual carbon dioxide air pressure can reach 10 in the heater hot operation long period final vacuum chamber
-8Mbar is great pollution to ultra-high vacuum environment, and surpasses service time after 1 year, and graphite flake attenuate degree is serious consequently can't be used.Commercial solution is to be coated with high-purity boron nitride (PBN) protective layer outside graphite heater, but costs an arm and a leg and can not use the protection of insulating nitride boron layer owing to electrically contact part, and the pollution of carbon still can't solve fully.
The utility model content
The purpose of this utility model is at the deficiencies in the prior art, a kind of new plane antenna radiation heater of anti-active oxygen corrosion is provided, advantages such as that this heater has is easy for installation, simple in structure, heating-up temperature is high, temperature homogeneity good, temperature-controlled precision is good, low pollution, resistance to oxidation, acid and alkali-resistance are especially suitable for use as the heater of vacuum oxide film growth.
For achieving the above object, the new plane antenna radiation heater of a kind of anti-active oxygen corrosion that the utility model proposes comprises: heater strip supporting disk, heater strip and metal foil electrode, be distributed with coiling hole array on the heater strip supporting disk, be symmetrically distributed with two terminal inserted holes in the supporting disk edges at two ends, described coiling hole array is as the criterion with two terminal inserted hole line of centres perpendicular bisectors, the coiling hole is being parallel to the hole row that the perpendicular bisector direction is a parallel arrangement, and with the perpendicular bisector left-right symmetric that is as the criterion; Spacing is respectively d with the row beginning of the most close perpendicular bisector hole between the row of Kong Lieyu hole, 2d, and d, 2d ... two hole column pitch of close perpendicular bisector are 2d, and total columns and d value and heater strip supporting disk size are suitable; Described heater strip equidistantly respectively passes coiling hole array formation heater strip cell array on the heater strip supporting disk in length and breadth, and this heater strip end line is installed on the described terminal inserted hole by metal foil electrode.
Further, described heater strip supporting disk is the disk that is made by the high-purity transparent quartz.
Further, described heater strip is made of tantalum wire, niobium silk or molybdenum filament.
Further, described metal foil electrode is made by tantalum piece, niobium sheet or molybdenum sheet.
Further, described hole column pitch near the plate edge part less than d.
The beneficial effects of the utility model are:
1. the utility model adopts single resistance heating wire and single heater strip supporting disk structure that minimum, the relative use of used unit and the minimum design of maintenance cost in heating wire type's plane heater of a kind of vacuum is provided;
2. the utility model adopts high-purity quartz as the heater strip supporting disk, utilized quartzy good transmitance to infrared emanation, make the effect of almost playing heated substrate around the heater strip at the back side, thereby improved heating uniformity and capacity usage ratio greatly with same efficient;
3. how much winding modes of the utility model heater strip have guaranteed that heater strip forms identical linear parallel little heating unit respectively on the supporting disk two sides, these identical little heating units constitute the plane heating array, and the linear heating electrodes direction on two sides is vertical mutually, make supporting disk two sides Wen Chang in length and breadth direction distribute more even;
4. the utility model heater strip is close than central distribution in the supporting disk edge distribution, greatly reduces the temperature field along the radially-arranged inhomogeneities of heater;
5. the utility model can obtain quite long winding length on a certain size heater strip supporting disk, and then significantly improve total work resistance value, with respect to aforementioned all resistance-type heater, especially resistive element heater, obtaining significantly to reduce operating current under the equal-wattage situation, reduce specification requirement greatly, utilize the PID control unit can accurately control underlayer temperature more easily power-supply device;
6. the utility model heater strip supporting disk material is a high purity quartz, and heater strip adopts High-purity Tantalum, niobium, and molybdenum, these material melting point are very high, and chemical stability is good, and vapour pressure is very little when high temperature uses, and pollutes minimum to vacuum environment;
7. the utility model can be according to actual needs determined the size of heater flexibly, is specially adapted to make diameter greater than 1 inch heater;
Adopt the heater of above-mentioned heater strip winding mode and heater strip supporting disk structure, in real work, be applied to direct current and alternate current operation pattern and at steady operation under＞800 ℃ of temperature for a long time under the oxygen environment, the temperature-controlled precision height, find that through the quadrupole mass spectrometer test carbon content declines to a great extent in the vacuum chamber, explanation can effectively solve graphite heater and bring the carbon contamination problem.Only need use acid corrosion can remove on the heater the sticking oxidation material of institute when safeguarding and do not damage heater itself.
Description of drawings:
Fig. 1 is present commercial graphite heater structural representation;
Fig. 2 a is the utility model plane antenna radiation heater structural representation, and Fig. 2 b is the structural representation that the utility model plane antenna radiation heater is put on heater strip.
Wherein,
1 quartzy heater strip supporting disk, 2 terminal inserted holes, 3 coiling holes, 4 tantalum heater strip cell arrays, 5 tantalum metal foil electrodes
Embodiment:
Below in conjunction with embodiment and accompanying drawing the utility model is elaborated, but can not be interpreted as restriction the utility model protection range.
The utility model plane antenna radiation heater as shown in Figure 2 comprises: quartzy heater strip supporting disk 1, terminal inserted hole 2, coiling hole 3, tantalum heater strip cell array 4, tantalum metal foil electrode 5; Supporting disk diameter 73mm wherein, thick 3mm; And terminal inserted hole 2 left-right symmetric are distributed on the supporting disk 1, diameter 4mm, and two hole heart distances are 62mm.The diameter in coiling hole 3 is 1mm, have 146 on the whole supporting disk 1, its rule of arranging is: coiling hole 3 is being parallel to the 16 row hole row that two terminal inserted holes, 2 line of centres perpendicular bisector directions form parallel arrangement, and with the perpendicular bisector left-right symmetric that is as the criterion, the hole column pitch is respectively 3mm with the row beginning of the most close perpendicular bisector hole, 6mm, 3mm, 6mm ... two hole column pitch of close perpendicular bisector are 6mm.Coiling hole 3 arrays are at the hole row that perpendicular to the perpendicular bisector direction are parallel arrangement, and with terminal inserted hole 2 lines of centres left-right symmetric that is as the criterion, middle column is positioned on terminal inserted hole 2 lines of centres, begin with middle column, the hole column pitch is 3mm, near plate edge part hole column pitch less than mid portion hole column pitch.Tantalum heater strip diameter is 0.5mm, earlier parallel two coilings hole, heater strip supporting disk 1 center of passing, equidistantly respectively pass coiling hole array formation heater strip cell array 4 on the heater strip supporting disk 1 more in length and breadth, each element length is 6mm, be 4mm or 5mm near the vertical heating unit length of supporting disk 1 edge, the closeer heating unit of edge is arranged and can be guaranteed that heater center temperature and lip temperature have the less temperature difference.Tantalum heater strip two ends and 5 welding of tantalum metal foil electrode, metal of the same race forms excellent electric contact, reduces contact resistance greatly.In vacuum chamber, use the molybdenum binding post to be connected＜10 with D.C. regulated power supply this heater cartridge
-8The mbar vacuum condition is tested with W-Re thermocouple and infrared radiation thermometer down, and the result shows that heating-up temperature can reach 800 ℃, central point and the edge temperature difference＜5 ℃ on diameter 73mm heater plane under 800 ℃ of conditions.
In vacuum chamber, use the molybdenum binding post to be connected, heater cartridge＜10 with AC power
-8The mbar vacuum condition uses Eurotherm 818 PID controllers to carry out the temperature control test down, and the result is as shown in the table:
| Room temperature～250 ℃ (15 ℃/min) | 250～500℃ (10℃/min) | 500～800℃ (10℃/min) | ||
| Temperature-controlled precision (± ℃) | Heating and cooling process | 2-3 | 1-1.5 | 0.5-1 |
| The set-point | 0.1 | 0.1 | 0.1 | |
| Set-point stabilization time (min) | ＜10 | ＜5 | ＜5 | |
The temperature control index reaches present commercial graphite heater standard fully.Test through mass spectrometer in the time of 800 ℃, in the chamber residual carbon dioxide air pressure＜10
-9Mbar, the carbon contamination degree reduces greatly.
Heater strip of the present utility model also can niobium silk or molybdenum filament, and metal foil electrode also can be made by niobium sheet or molybdenum sheet.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620003832 CN2888786Y (en) | 2006-02-16 | 2006-02-16 | Novel planar linear array radiation heater which can resist active oxygen corrosion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620003832 CN2888786Y (en) | 2006-02-16 | 2006-02-16 | Novel planar linear array radiation heater which can resist active oxygen corrosion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2888786Y true CN2888786Y (en) | 2007-04-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620003832 Expired - Lifetime CN2888786Y (en) | 2006-02-16 | 2006-02-16 | Novel planar linear array radiation heater which can resist active oxygen corrosion |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2888786Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100562196C (en) * | 2006-02-16 | 2009-11-18 | 中国科学院物理研究所 | A Planar Linear Array Radiant Heater Resistant to Active Oxygen Corrosion |
| US8841588B2 (en) | 2009-03-27 | 2014-09-23 | Tsinghua University | Heater |
-
2006
- 2006-02-16 CN CN 200620003832 patent/CN2888786Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100562196C (en) * | 2006-02-16 | 2009-11-18 | 中国科学院物理研究所 | A Planar Linear Array Radiant Heater Resistant to Active Oxygen Corrosion |
| US8841588B2 (en) | 2009-03-27 | 2014-09-23 | Tsinghua University | Heater |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Effective date of abandoning: 20091118 |
|
| AV01 | Patent right actively abandoned |
Effective date of abandoning: 20091118 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |