CN2796136Y - Substrate integrated waveguide broad band multiple path power distributor - Google Patents
Substrate integrated waveguide broad band multiple path power distributor Download PDFInfo
- Publication number
- CN2796136Y CN2796136Y CN 200520071951 CN200520071951U CN2796136Y CN 2796136 Y CN2796136 Y CN 2796136Y CN 200520071951 CN200520071951 CN 200520071951 CN 200520071951 U CN200520071951 U CN 200520071951U CN 2796136 Y CN2796136 Y CN 2796136Y
- Authority
- CN
- China
- Prior art keywords
- power divider
- integration wave
- substrate integration
- font
- guide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 239000002184 metal Substances 0.000 claims abstract description 20
- 230000010354 integration Effects 0.000 claims description 76
- 230000005855 radiation Effects 0.000 abstract description 2
- 238000003491 array Methods 0.000 abstract 1
- 238000005452 bending Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 2
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Images
Landscapes
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
本实用新型公开了一种微带天线阵列馈电用基片集成波导宽带多路功率分配器，包括双面覆有金属贴片的介质基片，其上设有“T”形功率分配器和“Y”形功率分配器，“T”形功率分配器由3个基片集成波导组成，“Y”形功率分配器由3个呈“Y”字形排列的基片集成波导组成，上述基片集成波导由设在介质基片上的2行金属化通孔构成；本实用新型具有能够在较宽的频带范围内实现等功率分配的作用，设计中易于集成，加工成本比也较低廉，具有较高的Q值，较低的损耗，几乎没有辐射，不会对系统中其他电路造成干扰，能够适合高频电路的设计等优点。
The utility model discloses a substrate-integrated waveguide broadband multi-channel power divider for feeding microstrip antenna arrays, which comprises a dielectric substrate covered with metal patches on both sides, on which a "T"-shaped power divider and "Y"-shaped power divider, "T"-shaped power divider is composed of 3 substrate-integrated waveguides, "Y"-shaped power divider is composed of 3 substrate-integrated waveguides arranged in a "Y" shape, the above-mentioned substrate The integrated waveguide is composed of two rows of metallized through-holes on the dielectric substrate; the utility model has the function of realizing equal power distribution in a wide frequency band range, and is easy to integrate in the design, and the processing cost is also relatively low. High Q value, low loss, almost no radiation, no interference to other circuits in the system, suitable for high-frequency circuit design and other advantages.
Description
Technical field
The utility model relates to an a kind of critical component of feeder system, relates in particular to a kind of aerial array feed chip integrated waveguide broad-band multipath power distributor.
Background technology
The microwave and millimeter wave power divider has obtained a large amount of application in the feeder line of microwave and millimeter wave antenna and microwave and millimeter wave instrument, it is a critical component of feeder system, particularly in the microwave and millimeter wave integrated circuit, the feed of micro-strip antenna array need be used low-loss, wide band power divider.Microstrip power divider commonly used its characteristic on centre frequency is comparatively desirable, in case but frequency is offset, and the performance of whole power divider is all with variation, thereby influences the performance of whole system.Utilize the microwave and millimeter wave metal waveguide can produce high Q value, low-loss, wide band power divider, but this power divider at first is difficult to processing, particularly at millimeter wave band, making this power divider needs very high machining accuracy; Secondly the production cost of this power divider is relatively more expensive; The 3rd this power divider volume ratio is huger, is difficult to be applied among the design of microwave, millimetre integrated circuit.
Summary of the invention
The utility model provides a kind of wide band chip integrated waveguide broad-band multipath power distributor that works in, and has that volume is little, easy of integration, processing cost is cheaper, is suitable for the design of microwave and millimeter wave integrated circuit, and it is high to have the Q value, the advantage that loss is low.
The utility model adopts following technical scheme:
A kind of micro-strip antenna array feed chip integrated waveguide broad-band multipath power distributor, comprise the two-sided dielectric substrate that is covered with metal patch, on dielectric substrate, be provided with "T"-shaped power divider and " Y " shape power divider, the horizontal head of " T " font two ends of "T"-shaped power divider are connected with " Y " font lower end of two " Y " shape power divider respectively, "T"-shaped power divider is made up of 3 substrate integration wave-guides, wherein 2 substrate integration wave-guide linear array also constitute the horizontal head of " T " font, one end of these 2 substrate integration wave-guides interconnects and is connected with an end of the substrate integration wave-guide of remainder, the other end of remaining substrate integration wave-guide is made as the I/O end, join domain at 3 substrate integration wave-guides forming "T"-shaped power divider is provided with plated-through hole, be respectively equipped with plated-through hole at the horizontal head of " T " of "T"-shaped power divider font two ends, " Y " shape power divider is by 3 that substrate integration wave-guide that " Y " font arranges is formed and the end connection of these 3 substrate integration wave-guides, the head of two " Y " fonts of " Y " shape power divider is made as output/input, join domain at 3 substrate integration wave-guides forming " Y " shape power divider is provided with plated-through hole, and above-mentioned substrate integration wave-guide is made of the 2 row metal through holes that are located on the dielectric substrate.
Compared with prior art, the utlity model has following advantage:
The utility model has utilized the rectangular metal waveguide to have high Q value, low-loss characteristics, has at first realized substrate integration wave-guide on the basis of dielectric substrate.This waveguide has transmission characteristic and the field distribution similar with the rectangular metal waveguide when working in main mould state.This power divider mainly is made up of three parts: substrate integration wave-guide T type two-way power divider, substrate integration wave-guide Y type two-way power divider, substrate integration wave-guide right-angle bending.The combination of three kinds of basic structures of user can form 2
N(N=1,2K) road power divider.In the structure of this chip integrated waveguide broad-band multipath power distributor, all structures all are to utilize to beat a series of metal throuth hole array realize on dielectric substrate, thereby help this power divider integrated in the microwave and millimeter wave circuit design; Substrate integration wave-guide T type two-way power divider is made of substrate integration wave-guide T shape structure and metal throuth hole wherein, this power divider can work in the bandwidth (relative bandwidth is greater than 20%) of broad, and its input and output substrate integration wave-guide has identical width; Substrate integration wave-guide Y type two-way power divider is made of substrate integration wave-guide Y shape knot and metal throuth hole wherein, this Y type power divider can work in the bandwidth (relative bandwidth is greater than 20%) of broad, and its input and output substrate integration wave-guide has identical width; Substrate integration wave-guide right-angle bending is made of substrate integration wave-guide right-angle bending and metal throuth hole wherein, and this bending can work in the bandwidth (relative bandwidth is greater than 20%) of broad, and its input and output substrate integration wave-guide has identical width; Whole chip integrated waveguide broad-band multipath power distributor can be by substrate integration wave-guide T type two-way power divider, substrate integration wave-guide Y type two-way power divider, and substrate integration wave-guide right-angle bending directly links to each other and combines.Concrete advantage of the present utility model is as follows:
1) can in the frequency band range of broad, (relative bandwidth is greater than 20%) realize the effect that constant power distributes;
2) this chip integrated waveguide broad-band multipath power distributor is easy to integratedly in the design of microwave and millimeter wave circuit, and processing cost is cheaper than also.This is because this power divider utilizes metal throuth hole to realize fully on dielectric substrate;
3) this chip integrated waveguide broad-band multipath power distributor has higher Q value, and lower loss does not almost have radiation, so it can not cause interference to other circuit in the system, so it can be fit to the design of high frequency (greater than 10.0GHz) circuit;
4) this chip integrated waveguide broad-band multipath power distributor is directly by substrate integration wave-guide T type two-way power divider, substrate integration wave-guide Y type two-way power divider, and substrate integration wave-guide right-angle bending three parts directly combine.Utilize this three part to constitute 2 very easily
N(N=1,2K) road power divider.
Description of drawings
Fig. 1 is the utility model structure T type two-way power divider front view.
Fig. 2 is the utility model structure T type two-way power divider vertical view.
Fig. 3 is the utility model structure Y type two-way power divider front view.
Fig. 4 is the utility model structure Y type two-way power divider vertical view.
Fig. 5 is the utility model structure substrate integration wave-guide right-angle bending front view.
Fig. 6 is the utility model structure substrate integration wave-guide right-angle bending vertical view.
Fig. 7 is the structural front view of the utility model embodiment (No. 8 power divider).
Fig. 8 is the utility model plated-through hole structural representation.
Fig. 9 is the utility model transmission parameter test result figure.
Figure 10 is the utility model input reflection parameters test result figure.
Embodiment
A kind of micro-strip antenna array feed chip integrated waveguide broad-band multipath power distributor, comprise the two-sided metal patch 2 that is covered with, 3 dielectric substrate 1, on dielectric substrate 1, be provided with "T"-shaped power divider 4 and " Y " shape power divider 5, the horizontal head of " T " font two ends of "T"-shaped power divider 4 are connected with " Y " font lower end of two " Y " shape power divider 5 respectively, "T"-shaped power divider 4 is made up of 3 substrate integration wave-guides, wherein 2 substrate integration wave-guide linear array also constitute the horizontal head of " T " font, one end of these 2 substrate integration wave-guides interconnects and is connected with an end of the substrate integration wave-guide of remainder, the other end of remaining substrate integration wave-guide is made as I/O end 7, join domain at 3 substrate integration wave-guides forming "T"-shaped power divider 4 is provided with plated-through hole 41, be respectively equipped with plated-through hole 42 at the horizontal head of " T " of "T"-shaped power divider 4 font two ends, 34, " Y " shape power divider 5 is by 3 that substrate integration wave-guide that " Y " font arranges is formed and the end connection of these 3 substrate integration wave-guides, the head of two " Y " fonts of " Y " shape power divider 5 is made as output/input 8, join domain at 3 substrate integration wave-guides forming " Y " shape power divider 5 is provided with plated-through hole 51, above-mentioned substrate integration wave-guide is made of the 2 row metal through holes that are located on the dielectric substrate 1, above-mentioned plated-through hole 41 is positioned on the substrate integration wave-guide center line as " T " font lower end of "T"-shaped power divider 4, is respectively equipped with plated-through hole 52 in the connection corner of two " Y " fonts of " Y " shape power divider 5,53.
The utility model can by increasing "T"-shaped power divider and " Y " shape power divider, realize 4 the tunnel, the 8 tunnel and even 2 according to the described basic structure of the foregoing description
N(N=1,2K) road power divider.Below be the concrete aforesaid way of No. 8 power dividers:
Present embodiment is on the basis of embodiment 1, between " Y " font lower end of " T " of "T"-shaped power divider 4 font horizontal head two ends and " Y " shape power divider 5, also be respectively equipped with another "T"- shaped power divider 91,92, and this another "T"-shaped power divider 91, " T " font lower end of 92 is connected with the horizontal head of " T " font two ends of above-mentioned "T"-shaped power divider 4 respectively, this another "T"-shaped power divider 91, horizontal head one end of " T " font of 92 is connected with " Y " font lower end of above-mentioned " Y " shape power divider 5 respectively, at this another "T"- shaped power divider 91,92 the horizontal head other end of " T " font also is connected with " Y " shape power divider 93 respectively, 94 and respectively with " Y " shape power divider 93, " Y " font lower end of 94 connects, above-mentioned another "T"- shaped power divider 91 or 92 also is made up of 3 substrate integration wave-guides, wherein 2 substrate integration wave-guide linear array also constitute the horizontal head of " T " font, one end of these 2 substrate integration wave-guides interconnects and is connected with an end of the substrate integration wave-guide of remainder, join domain at 3 substrate integration wave-guides forming "T"- shaped power divider 91 or 92 is provided with plated-through hole 911 or 921, the horizontal head of " T " font two ends in this another "T"- shaped power divider 911 or 921 are respectively equipped with plated-through hole 912,913 or 922,923, " Y " shape power divider 93 or 94 that is connected with this another "T"- shaped power divider 911 or 921, be by 3 that substrate integration wave-guide that " Y " font arranges is formed and the end connection of these 3 substrate integration wave-guides, join domain at 3 substrate integration wave-guides forming " Y " shape power divider 93 or 94 is provided with plated-through hole 931 or 941, above-mentioned another "T"- shaped power divider 911 or 921 and with it the substrate integration wave-guide in " Y " shape power divider 93 or 94 of connecting of the horizontal head other end of " T " font also constitute by the 2 row metal through holes that are located on the dielectric substrate 1, above-mentioned plated-through hole 911 or 921 is positioned on the substrate integration wave-guide center line as " T " font lower end of "T"- shaped power divider 91 or 92, is respectively equipped with plated-through hole 932 in the connection corner of two " Y " fonts of " Y " shape power divider 93 or 94,933 or 942,943."T"-shaped power divider in the present embodiment, " Y " shape power divider and substrate integration wave-guide thereof all can adopt identical structure, above-mentioned plated-through hole is to offer through hole on dielectric substrate, metallic sheath 6 is set on through-hole wall and metallic sheath and the metal patch that is overlying on the dielectric substrate bilateral are coupled together.
The utility model after tested, result following (referring to Fig. 6):
We have realized chip integrated waveguide broad-band No. 16 power dividers of above introduction at X-band, the diameter that is used for constituting the substrate integration wave-guide metal throuth hole is 0.8mm, spacing between the through hole is 0.8mm, below be test result: in 10.0GHZ～13.5GHz, S11 is less than-15dB, the output of each output port is about-13.0dB, and it is slightly less than-12dB, and this is because the loss that dielectric loss and metal loss are caused causes.
Claims (6)
1, a kind of micro-strip antenna array feed chip integrated waveguide broad-band multipath power distributor, it is characterized in that comprising the two-sided metal patch (2 that is covered with, 3) dielectric substrate (1), on dielectric substrate (1), be provided with "T"-shaped power divider (4) and " Y " shape power divider (5), the horizontal head of " T " font two ends of "T"-shaped power divider (4) are connected with " Y " font lower end of two " Y " shape power divider (5) respectively, "T"-shaped power divider (4) is made up of 3 substrate integration wave-guides, wherein 2 substrate integration wave-guide linear array also constitute the horizontal head of " T " font, one end of these 2 substrate integration wave-guides interconnects and is connected with an end of the substrate integration wave-guide of remainder, the other end of remaining substrate integration wave-guide is made as I/O end (7), join domain at 3 substrate integration wave-guides forming "T"-shaped power divider (4) is provided with plated-through hole (41), be respectively equipped with plated-through hole (42 at the horizontal head of " T " of "T"-shaped power divider (4) font two ends, 34), " Y " shape power divider (5) is by 3 that substrate integration wave-guide that " Y " font arranges is formed and the end connection of these 3 substrate integration wave-guides, the head of two " Y " fonts of " Y " shape power divider (5) is made as output/input (8), join domain at 3 substrate integration wave-guides forming " Y " shape power divider (5) is provided with plated-through hole (51), and above-mentioned substrate integration wave-guide is made of the 2 row metal through holes that are located on the dielectric substrate (1).
2, chip integrated waveguide broad-band multipath power distributor according to claim 1 is characterized in that plated-through hole (41) is positioned on the substrate integration wave-guide center line as " T " font lower end of "T"-shaped power divider (4).
3, chip integrated waveguide broad-band multipath power distributor according to claim 1 and 2 is characterized in that being respectively equipped with plated-through hole (52,53) in the connection corner of two " Y " fonts of " Y " shape power divider (5).
4, chip integrated waveguide broad-band multipath power distributor according to claim 3, it is characterized in that between " Y " font lower end of " T " of "T"-shaped power divider (4) font horizontal head two ends and " Y " shape power divider (5), also being respectively equipped with another "T"-shaped power divider (91,92), and this another "T"-shaped power divider (91,92) " T " font lower end is connected with the horizontal head of " T " font two ends of above-mentioned "T"-shaped power divider (4) respectively, this another "T"-shaped power divider (91,92) horizontal head one end of " T " font is connected with " Y " font lower end of above-mentioned " Y " shape power divider (5) respectively, at this another "T"-shaped power divider (91,92) the horizontal head other end of " T " font also is connected with " Y " shape power divider (93 respectively, 94) and respectively with " Y " shape power divider (93,94) " Y " font lower end connects, above-mentioned another "T"-shaped power divider (91 or 92) also is made up of 3 substrate integration wave-guides, wherein 2 substrate integration wave-guide linear array also constitute the horizontal head of " T " font, one end of these 2 substrate integration wave-guides interconnects and is connected with an end of the substrate integration wave-guide of remainder, join domain at 3 substrate integration wave-guides forming "T"-shaped power divider (91 or 92) is provided with plated-through hole (911 or 921), the horizontal head of " T " font two ends at this another "T"-shaped power divider (911 or 921) are respectively equipped with plated-through hole (912,913 or 922,923), " Y " shape power divider (93 or 94) that is connected with this another "T"-shaped power divider (911 or 921), be by 3 that substrate integration wave-guide that " Y " font arranges is formed and the end connection of these 3 substrate integration wave-guides, join domain at 3 substrate integration wave-guides forming " Y " shape power divider (93 or 94) is provided with plated-through hole (931 or 941), and the substrate integration wave-guide in " Y " shape power divider (93 or 94) of above-mentioned another "T"-shaped power divider (911 or 921) and the horizontal head other end connection of " T " font with it also is made of the 2 row metal through holes that are located on the dielectric substrate (1).
5, chip integrated waveguide broad-band multipath power distributor according to claim 4 is characterized in that plated-through hole (911 or 921) is positioned on the substrate integration wave-guide center line as " T " font lower end of "T"-shaped power divider (91 or 92).
6, chip integrated waveguide broad-band multipath power distributor according to claim 5 is characterized in that being respectively equipped with plated-through hole (932,933 or 942,943) in the connection corner of two " Y " fonts of " Y " shape power divider (93 or 94).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520071951 CN2796136Y (en) | 2005-05-30 | 2005-05-30 | Substrate integrated waveguide broad band multiple path power distributor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520071951 CN2796136Y (en) | 2005-05-30 | 2005-05-30 | Substrate integrated waveguide broad band multiple path power distributor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2796136Y true CN2796136Y (en) | 2006-07-12 |
Family
ID=36813883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520071951 Expired - Fee Related CN2796136Y (en) | 2005-05-30 | 2005-05-30 | Substrate integrated waveguide broad band multiple path power distributor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2796136Y (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100511833C (en) * | 2005-05-30 | 2009-07-08 | 东南大学 | Chip integrated waveguide broad-band multipath power distributor |
| CN104577353A (en) * | 2015-01-15 | 2015-04-29 | 哈尔滨工业大学 | X-band substrate integrated waveguide four-element array antenna |
| WO2017005000A1 (en) * | 2015-07-07 | 2017-01-12 | Huawei Technologies Co., Ltd. | Substrate integrated waveguide switch |
| CN106374179A (en) * | 2016-09-21 | 2017-02-01 | 哈尔滨工业大学 | A Half-mode Substrate Integrated Waveguide Power Divider Loaded Through Holes |
| CN110649388A (en) * | 2019-10-10 | 2020-01-03 | 东南大学 | Low-loss feed network and high-efficiency antenna equipment |
-
2005
- 2005-05-30 CN CN 200520071951 patent/CN2796136Y/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100511833C (en) * | 2005-05-30 | 2009-07-08 | 东南大学 | Chip integrated waveguide broad-band multipath power distributor |
| CN104577353A (en) * | 2015-01-15 | 2015-04-29 | 哈尔滨工业大学 | X-band substrate integrated waveguide four-element array antenna |
| WO2017005000A1 (en) * | 2015-07-07 | 2017-01-12 | Huawei Technologies Co., Ltd. | Substrate integrated waveguide switch |
| US9985331B2 (en) | 2015-07-07 | 2018-05-29 | Huawei Technologies Co., Ltd. | Substrate integrated waveguide switch |
| CN106374179A (en) * | 2016-09-21 | 2017-02-01 | 哈尔滨工业大学 | A Half-mode Substrate Integrated Waveguide Power Divider Loaded Through Holes |
| CN106374179B (en) * | 2016-09-21 | 2019-04-19 | 哈尔滨工业大学 | A Via-Loaded Half-Mode Substrate Integrated Waveguide Power Divider |
| CN110649388A (en) * | 2019-10-10 | 2020-01-03 | 东南大学 | Low-loss feed network and high-efficiency antenna equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106911011B (en) | An array antenna structure and design method | |
| CN100449864C (en) | Substrate Integrated Waveguide Comb Power Divider | |
| CN109037966B (en) | Endfire Multibeam Dual Circularly Polarized Antenna Array Using Dielectric Loaded Step Slots | |
| CN1838478A (en) | Microwave and millimeter wave substrate integrated waveguide dielectric resonator antenna | |
| CN103066367B (en) | Integration waveguide directional coupler | |
| CN108777343B (en) | Substrate integrated waveguide transmission structure, antenna structure and connection method | |
| CN206506028U (en) | An array antenna structure | |
| CN108172958A (en) | A Periodic Slow Wave Transmission Line Unit Based on Coplanar Waveguide | |
| CN207082637U (en) | Substrate integrated waveguide slot antenna based on high-order mode feed | |
| CN2796136Y (en) | Substrate integrated waveguide broad band multiple path power distributor | |
| CN1700513A (en) | Substrate-integrated waveguide broadband multi-channel power divider | |
| JP2020506603A (en) | Transmission line-waveguide transition device | |
| CN2888662Y (en) | High-performance waveguide filter with integrated microwave/millimeter wave substrate | |
| CN208173765U (en) | Substrate integration wave-guide transmission structure, antenna structure | |
| CN201174418Y (en) | Half-mode substrate integrated waveguide single-layer three-dimensional power divider | |
| CN1700515A (en) | Balanced feed broadband substrate integrated waveguide slot array antenna unit | |
| CN111697350B (en) | Broadband SIW slot antenna based on 77GHz balanced symmetrical formula feed | |
| CN114171872A (en) | Broadband miniaturized millimeter wave double-channel cross bridge | |
| CN201174416Y (en) | Substrate-integrated waveguide power splitter with step transition | |
| CN2793946Y (en) | Balanced-feeding and waveguiding gap array antenna unit with wideband integration | |
| CN111244619A (en) | Patch Array Antenna Based on Air-Substrate Integrated Waveguide | |
| CN2796133Y (en) | Electromagnetic band gap structure substate integrated wave guide cavity filter | |
| CN200965912Y (en) | Seminorm substrate integral waveguide 90 degree 3-dB directional coupler | |
| CN2789948Y (en) | Substrate integrated wave guide double-frequency wideband slot array antenna unit | |
| CN212011278U (en) | Leaky-wave antenna based on substrate integrated waveguide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060712 Termination date: 20110530 |