CN2438725Y

CN2438725Y - Oxidation film epitaxial equipment

Info

Publication number: CN2438725Y
Application number: CN 00254687
Authority: CN
Inventors: 咎育德; 林兰英
Original assignee: Institute of Semiconductors of CAS
Current assignee: Institute of Semiconductors of CAS
Priority date: 2000-09-22
Filing date: 2000-09-22
Publication date: 2001-07-11
Anticipated expiration: 2010-09-22

Abstract

The utility model belongs to oxidation film epitaxial equipment generated by strong oxidizing agent and strong reducing agent which are used as sources. The upper part of a reaction cover is provided with two air inlets which are respectively communicated with a gas source gas path and a liquid source gas path. A spacer plate for preventing two paths of source gas entering a reaction chamber space from meeting from a main path that gas source becomes liquid source is arranged between a turntable positioned in the quartz reaction cover and the two air inlets. The lower end of the quartz reaction cover is positioned on a base which is communicated with a reaction chamber cavity and is communicated with an air pump by an air pumping pipeline. A sample entering window is also arranged on one side of the base. A drive mechanism which enables a turning rod in the reaction chamber cavity to rotate is arranged on the base. The other path of two three-way valves is communicated with a thermal decomposition furnace, and then is communicated with the air pump.

Description

The oxide film epitaxial device

It is the epitaxial device that the source generates oxide film that the utility model belongs to strong oxidizer and strong reductant.

The compound that generates with strong oxidizer and strong reductant chemical combination has high-melting-point, high strength, and high insulation and the advantage that can have the good transparency in industry, especially obtain increasingly extensive application in machinery, chemical industry, electronic industry.Recently its growth method has expanded to the film place and has prolonged technical elements, as the AL that grows on silicon ₂O ₃(aluminium sesquioxide) and then prolong Si (silicon) outward even carry out the heterogeneous multi-layer extension and form semiconductor film-insulating film-semiconductor film-insulating film-silicon substrate multilayer hetero-structure material.But epitaxial device is comparatively backward at present, poor sealing performance in the reaction chamber, cause epitaxial film to form a large amount of microtwinnings, and chemical reaction takes place and generates oxide compound in advance in the unreasonable source of structure design gas in advance in reaction chamber, when reaching substrate surface the shape particulate can not make the extension success ratio low by growing single-crystal, cause the film quality of generation poor.

The purpose of this utility model provides a kind of epitaxial device of oxide film, makes it have good functions of use, improves quality and success ratio that oxide film generates.

For achieving the above object, the utility model is taked following design: the epitaxial device of this oxide film, by reaction chamber, off-gas pump, fluid supply and gas source are formed, two inlet mouths are arranged at the top of reaction hood, two two T-valve that inlet mouth is controlled by the time electric control box of being supplied gas respectively, a pressure controller, a flow director is communicated with gas source gas circuit and fluid supply gas circuit respectively, being provided with one between the turntable in the quartz reaction cover and two inlet mouths prevents from gas source, or the dividing plate that meets in the reaction chamber space of the two-way source gas that enters in the fluid supply gas circuit, quartz reaction cover lower end is positioned on the base, base is communicated with the reaction chamber and communicates with off-gas pump by pump-line, base one side also is provided with sample introduction product window, on the base if the transmission rig that bull stick rotates in the reaction chamber, another road of two T-valve thermal decomposition furnace off-gas pump that communicates again that communicates.

The utility model has the advantages that simple in structurely, reasonable in design, be suitable for various oxide film epitaxial materials and make that have good safe functions of use, success ratio height, quality that the oxide film compound generates are good.

The utility model is described in further detail below in conjunction with accompanying drawing.

Fig. 1 is a structural representation of the present utility model

Fig. 2 is the utility model reaction chamber structure synoptic diagram

Fig. 3 is the utility model drive mechanism synoptic diagram

Fig. 4 is a quartz reaction cover structure synoptic diagram

As shown in Figure 1 and Figure 2, reaction chamber 8 of the present utility model is main equipments of finishing epitaxy technique.Provided in the pyritous quartz reaction cover 13 by high frequency furnace to form reactor chamber, two inlet mouths are arranged at the top of quartz reaction cover.One is fluid supply inlet mouth 29, and the supplied gas T-valve 7 of time electric control box 16 circuit control and valve 15 and pressure controller 6 of communicating is communicated with the fluid supply gas circuits.Fluid supply is strong reductant and is generally trimethyl aluminium or triethyl aluminum.The fluid supply gas circuit is generally carries gas 1 and filters through gas purifier 3 by reducing valve 2 again and enter fluid supply 5 holder transport fluid body sources through flow director 4 and form.Another road of this T-valve thermal decomposition furnace 11 that communicates enters pyrolytic decomposition toxic gas in the thermal decomposition furnace to guarantee the operating bypassed exhaust gas of this gas circuit, prevents contaminate environment.The nontoxic gas that decomposes is discharged outdoor by the off-gas pump 10 that communicates with thermal decomposition furnace again.Communicate the supplied gas T-valve 17 of time electric control box control and valve 18 and pressure controller 19 of another inlet mouth 30 of quartz reaction cover is communicated with gas source gas circuits 12 by another valve 20 again, and gas source is a strong oxidizer, constitutes with oxygen or laughing gas usually.Another road direction of this T-valve 17 is communicated with thermal decomposition furnace 11, and its effect is identical so be not repeated.Obviously the utility model adopts double air road system, and the T-valve 7,17 that adopts the time electric control box 16 of supplying gas to control on two gas circuits, control two-way gas feeds reaction chamber simultaneously, or one the tunnel logical another road close, or close simultaneously after one tunnel ventilation to guarantee that source gas combination reaction does not take place and grow up at substrate surface in the space in reaction chamber.Electric control box can be controlled by computer program, and computer receives signal control electric control box assigned temperature and the pressure that is positioned on the equipment, various parts running controls.Computer program control and the insulation warming-up device in gas circuit and high frequency furnace warming-up device are traditional structure so be not repeated.

As shown in Figure 2, the utility model is provided with a dividing plate 34 that prevents that gas source and fluid supply from meeting in the reaction chamber space between the turntable in the quartz reaction cover 32 and two inlet mouths, to prevent that source gas from meeting in the reaction interior space, chemical reaction takes place in advance cause generating nucleus.Quartz reaction cover lower end is positioned on the base 22, base is communicated with the reaction chamber and communicates with off-gas pump 9 by pump-line 21, base one side also is provided with sample introduction product window 27, in order to picking and placeing sample and finished product, on the base if the drive mechanism 14 that bull stick 33 rotates in the reaction chamber.Also be provided with vacuum detection hole 28 on the base and be used to lay the detection instrument probe, vacuum information in the reaction chamber is provided.

Referring to Fig. 2, shown in Figure 3, transmission rig 14 of the present utility model is contactless magnetictransmission structure, bull stick lower end apical grafting is on the bearing 37 of fixing seal ladle bowl 24, bull stick bottom fixed permanent magnet rotor 34, be provided with PM rotor 35 outside the chamber outward with the sealing ladle bowl that is positioned at sealing ladle bowl PM rotor correspondence position, the PM rotor outer end connects transmitting gear 23 outside the chamber, and transmitting gear is taken turns with motor 25 by belt 26 and linked to each other, and the sealing ladle bowl is fixed on the base lower end by seal connector 36.PM rotor is connected by bearing support with seal connector outside the chamber.React under the condition of chamber in assurance vacuum-sealing like this, PM rotor rotates outside the sealing ladle bowl outside the motor driven gear drive chamber, thereby the permanent magnet that magnetic force drives and bull stick fuses rotation makes the bull stick rotation.

As shown in Figure 4, evenly finish epitaxy, guaranteeing under the turntable rotation situation, should realize also that simultaneously sample 31 can do rotation around the axis of self at sample surfaces for guaranteeing alumina.Guarantee the film quality unanimity of giving birth to.Hollow in the described turntable, turntable 32 lower ends and bull stick top are fixed as one, and the bull stick upper end is positioned at the hollow turntable for bull stick gear 41, establishes two sample table 45 on the turntable.The sample table lower end is positioned on the platform axostylus axostyle 43, and the platform axostylus axostyle is coupling by bearing 44 and turntable, and gear 42 and bull stick gear 41 toe joints are established in platform axostylus axostyle lower end, thereby realizes above-mentioned functions.

For reducing the high temperature of quartz reaction cover source gas inlet mouth effectively, establish in quartz reaction cover upper end and to add layer and form a water jacket 40, establish the cooling water inlet 38 that communicates with water jacket and hot water outlet 39 on the quartz reaction cover and finish with recirculated water inlet mouth is lowered the temperature.

In a word, with all cpds yield rate height of equipment making of the present utility model, quality is good, and cost is low, can extensively use in industry.

Claims

1, a kind of epitaxial device of oxide film, by reaction chamber, off-gas pump, fluid supply and gas source are formed, it is characterized in that: two inlet mouths are arranged at the top of reaction hood, two two T-valve that inlet mouth is controlled by the time electric control box of being supplied gas respectively, flow director of a pressure controller is communicated with gas source gas circuit and fluid supply gas circuit respectively, being provided with one between the turntable in the quartz reaction cover and two inlet mouths prevents from gas source, or the dividing plate that meets in the reaction chamber space of the two-way source gas that enters in the fluid supply main road, quartz reaction cover lower end is positioned on the base, base is communicated with the reaction chamber and communicates with off-gas pump by pump-line, base one side also is provided with sample introduction product window, on the base if the transmission rig that bull stick rotates in the reaction chamber, another road of two T-valve thermal decomposition furnace off-gas pump that communicates again that communicates.

2, the epitaxial device of oxide film according to claim 1, it is characterized in that: described transmission rig is contactless magnetictransmission structure, on the bearing of bull stick lower end apical grafting in the fixing seal ladle bowl, bull stick bottom fixed permanent magnet rotor, be provided with PM rotor outside the chamber outward with the sealing ladle bowl that is positioned at sealing ladle bowl PM rotor correspondence position, the PM rotor outer end connects transmitting gear outside the chamber, transmitting gear links to each other with the motor wheel by belt, and the sealing ladle bowl is fixed on the base lower end by seal connector.

3, the epitaxial device of oxide film according to claim 1, it is characterized in that: hollow in the described turntable, turntable lower end and bull stick top are fixed as one, the bull stick upper end is positioned at the hollow turntable for the bull stick gear, establish two sample table on the turntable, the sample table lower end is positioned on the platform axostylus axostyle, and the platform axostylus axostyle is coupling by bearing and turntable, and gear and bull stick gear toe joint are established in platform axostylus axostyle lower end.

4, the epitaxial device of oxide film according to claim 1 is characterized in that: described quartz reaction cover upper end is established and is added layer formation water jacket, establishes the cooling water inlet and the hot water outlet that communicate with water jacket on the quartz reaction cover.