CN221995445U - L-band high-power miniaturized transceiver module based on SIP technology - Google Patents
L-band high-power miniaturized transceiver module based on SIP technology Download PDFInfo
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- CN221995445U CN221995445U CN202323498210.1U CN202323498210U CN221995445U CN 221995445 U CN221995445 U CN 221995445U CN 202323498210 U CN202323498210 U CN 202323498210U CN 221995445 U CN221995445 U CN 221995445U
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- circuit
- power
- chip circuit
- receiving channel
- transceiver module
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- 238000005516 engineering process Methods 0.000 title claims abstract description 22
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- 230000003321 amplification Effects 0.000 claims description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
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- 238000007789 sealing Methods 0.000 claims description 4
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- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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- HOWHQWFXSLOJEF-MGZLOUMQSA-N systemin Chemical compound NCCCC[C@H](N)C(=O)N[C@@H](CCSC)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H](CC(O)=O)C(=O)OC(=O)[C@@H]1CCCN1C(=O)[C@H]1N(C(=O)[C@H](CC(O)=O)NC(=O)[C@H](CCCN=C(N)N)NC(=O)[C@H](CCCCN)NC(=O)[C@H](CO)NC(=O)[C@H]2N(CCC2)C(=O)[C@H]2N(CCC2)C(=O)[C@H](CCCCN)NC(=O)[C@H](CO)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@@H](NC(=O)[C@H](C)N)C(C)C)CCC1 HOWHQWFXSLOJEF-MGZLOUMQSA-N 0.000 description 1
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Abstract
The utility model discloses an L-band high-power miniaturized transceiver module based on an SIP technology, which comprises a metal tube shell, a bent needle insulator, a bent needle multi-core pin array, a high-power amplifier multi-chip circuit, a lower microwave multi-chip circuit, an upper microwave multi-chip circuit and a metal cover plate, wherein the metal tube shell is arranged on the upper microwave multi-chip circuit; the bent needle insulator, the bent needle multi-core pin header, the high-power amplifier multi-chip circuit, the lower microwave multi-chip circuit and the metal cover plate are all arranged on the metal tube shell, and the upper microwave multi-chip circuit is stacked on the lower microwave multi-chip circuit through the metal balls.
Description
Technical Field
The utility model relates to a SIP module design technology, in particular to an L-band high-power miniaturized transceiver module based on the SIP technology.
Background
With the increasing maturity of communication technology in the application of military and civil electronic equipment, the requirements on the complexity of Radio Frequency (RF) systems are also increasing. Under the holding of a three-dimensional system-in-package technology (3D Systemin Package,3D SIP), the circuit stacking in the Z-axis direction is realized through the Ball Grid Array (BGA) between the substrates, and the high-density radio frequency circuit consisting of a plurality of bare chips and passive devices is integrated in a limited space, so that the integrated circuit has the characteristics of miniaturization, low power consumption, high integration level, easiness in production and the like.
In the development process of the transceiver module, if the final-stage power amplifier circuit of the radio frequency output and the transceiver channel circuit can be integrated in the same packaging tube shell, the integration level of the device can be greatly improved, and the power consumption of the device can be reduced by means of high-density layout to improve the efficiency. However, most of the SIP package packages commonly used at present are ceramic substrates, and the heat dissipation capability of the SIP package packages is weak, so that the integration of the power device circuit cannot be realized. The high-power tube shell has a single structure, cannot be compatible with other complex circuits, is mostly a screw tube shell, and is complex in assembly process. Therefore, the design of the transceiver module which combines heat dissipation, functions and assembly has great engineering research value.
Disclosure of utility model
The utility model aims to provide an L-band high-power miniaturized transceiver module based on the SIP technology.
In order to achieve the above purpose, the present utility model adopts the following technical scheme: an L-band high-power miniaturized transceiver module based on the SIP technology comprises a metal tube shell, wherein a high-power amplification multi-chip circuit and a lower microwave multi-chip circuit are arranged at the bottom in a cavity of the metal tube shell, bent needle insulators are arranged on two opposite side walls of the metal tube shell, and bent needle multi-core pin bars are arranged on the other side wall between the two side walls of the metal tube shell; the bent end of the bent needle insulator and the bent needle multicore pin header face the outside of the metal tube shell, the bottom of the bent end is flush with the bottom of the metal tube shell, and the flat end of the bent end faces the inside of the metal tube shell and is welded on a lower substrate of the lower microwave multichip circuit; the high-power amplifier multi-chip circuit is connected to a lower substrate of the lower microwave multi-chip circuit through gold wire bonding; the lower microwave multi-chip circuit and the upper microwave multi-chip circuit are connected in a stacking mode through metal balls between the lower substrate and the upper substrate; the metal cover plate is arranged at the top of the metal tube shell, so that the sealing of the cavity is realized.
Compared with the prior art, the utility model has the remarkable advantages that: (1) The final stage power amplifier circuit is integrated in the transceiver module, so that the integration level is higher and the power consumption is smaller; (2) the surface mount module is easy to assemble; and (3) solving the problem of poor heat dissipation of the common SIP tube shell.
Drawings
Fig. 1 is a split view of a structure of an L-band high-power miniaturized transceiver module.
Fig. 2 is a diagram of a high power amplifier multi-chip circuit and an underlying microwave multi-chip circuit.
Fig. 3 is a diagram of an upper microwave multi-chip circuit.
Detailed Description
As shown in fig. 1, an L-band high-power miniaturized transceiver module based on SIP technology comprises a metal tube shell 1, a bent needle insulator 2, a bent needle multi-core pin header 3, a high-power amplification multi-chip circuit 4, a lower microwave multi-chip circuit 5, an upper microwave multi-chip circuit 6 and a metal cover plate 7; a high-power amplification multi-chip circuit 4 and a lower microwave multi-chip circuit 5 are arranged at the bottom in the cavity of the metal tube shell 1, bent needle insulators 2 are arranged on the left side wall and the right side wall of the metal tube shell 1, and bent needle multi-core pin arrays 3 are arranged on the rear side wall; the bent needle insulator 2 and the bent needle multicore pin header 3 face the outside of the metal tube shell 1, the bottom of the bent end is flush with the bottom of the metal tube shell 1, and the straight end faces the inside of the metal tube shell 1 and is welded on a lower substrate of the lower microwave multichip circuit 5; the high-power amplification multi-chip circuit 4 is bonded to the lower substrate 11 of the lower microwave multi-chip circuit 5 through gold wires to realize connection; the upper microwave multi-chip circuit 5 and the lower microwave multi-chip circuit 6 are connected in a stacked mode through metal balls between the lower substrate 11 and the upper substrate 16; the metal cover plate 7 is arranged at the top of the metal tube shell 1 to realize the sealing of the cavity.
In this embodiment, the definition of the left and right side walls and the rear side wall of the metal shell 1 is to keep the lower microwave multi-chip circuit 5 and the upper microwave multi-chip circuit 6 horizontal according to the placement positions in fig. 1.
The utility model realizes the transmission or the reception of external radio frequency signals through the bent needle insulator 2; the bent needle multi-core insulator 3 realizes the power-on and the control of the electric frequency transmission of the module.
In a further embodiment, the shell of the metallized tube 1 is made of oxygen-free copper and is surface-plated with gold, and the external dimension is 30 x 25 x 7mm.
In a further embodiment, the left side wall of the metal tube shell 1 is provided with a bent needle insulator 2 mounting hole, the right side wall is provided with three bent needle insulator 2 mounting holes, and the rear side wall is provided with two bent needle multi-core pin header 3 mounting holes.
In a further embodiment, the bent needle insulator 2 on the left side wall of the metal shell 1 is a signal output end of a transmitting channel or a signal input end of a receiving channel; the three bent needle insulators 2 on the right side wall of the metal tube shell 1 are respectively from top to bottom: a first receiving channel signal output end, a second receiving channel signal output end and a transmitting channel signal input end; two bent needle multi-core rows 3 on the upper side wall of the metal tube shell 1 are input ends of power-on and control signals.
In a further embodiment, as shown in fig. 2, the high-power amplification multi-chip circuit 4 is formed by cascading a boost stage amplifying circuit 8, a final stage amplifying circuit 9 and a high-power switch circuit 10.
In a further embodiment, the lower microwave multi-chip circuit 5 includes a lower substrate 11, a negative pressure protection circuit 12, a negative pressure bias circuit 13, a transmitting channel amplifying circuit 14, and a receiving channel limiting circuit 15.
In a further embodiment, the lower substrate 11 of the lower microwave multi-chip circuit 5 is grooved for placing the high-power amplifier multi-chip circuit 4; the signal input end of the transmitting channel receives the signal, and the signal sequentially passes through the transmitting channel amplifying circuit 14, the pushing stage amplifying circuit 8, the final stage amplifying circuit 9 and the high-power switch circuit 10 to reach the signal output end of the transmitting channel, so that the amplifying saturated output of the transmitting signal is realized.
In a further embodiment, as shown in fig. 3, the upper microwave multi-chip circuit 6 includes an upper substrate 16, a receiving channel amplifying circuit 17, a receiving channel power dividing circuit 18, and a receiving channel switch filter bank circuit 19.
In a further embodiment, the signal input end of the receiving channel receives the signal, and the signal is split into two after passing through the high-power switch circuit 10, the receiving channel amplitude limiting circuit 15, the receiving channel amplifying circuit 17 and the receiving channel power dividing circuit 18 in sequence, one path of the signal reaches the first signal output end of the receiving channel through the switch filter bank circuit 19, and the other path of the signal directly reaches the second signal output end of the receiving channel, so that amplification and filtering of the received signal are realized.
In a further embodiment, the material of the metal cover plate 7 is oxygen-free copper, and a laser seam welding technology is used for sealing.
In a further embodiment, the module has a frequency band of 1-2 GHz and a transmit power of 5W.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present utility model, not for limiting the same, wherein the parts not described in detail are common general knowledge of the person skilled in the art. The protection scope of the utility model is defined by the claims, and any equivalent changes based on the technical teaching of the utility model are also within the protection scope of the utility model.
Claims (10)
1. The L-band high-power miniaturized transceiver module based on the SIP technology comprises a metal tube shell (1) and is characterized in that a high-power amplification multi-chip circuit (4) and a lower microwave multi-chip circuit (5) are arranged at the bottom in a cavity of the metal tube shell (1), bent needle insulators (2) are arranged on two opposite side walls of the metal tube shell (1), and bent needle multi-core pin headers (3) are arranged on the other side wall between the two side walls of the bent needle insulators (2); the bent needle insulator (2) and the bent needle multi-core pin header (3) face the outside of the metal tube shell (1), the bottom of the bent end is flush with the bottom of the metal tube shell (1), and the flat end of the bent end faces the inside of the metal tube shell (1) and is welded on the lower substrate (11) of the lower-layer microwave multi-chip circuit (5); the high-power amplifier multi-chip circuit (4) is connected to a lower substrate (11) of the lower microwave multi-chip circuit (5) through gold wire bonding; the lower microwave multi-chip circuit (5) and the upper microwave multi-chip circuit (6) are connected in a stacking mode through metal balls between the lower substrate (11) and the upper substrate (16); the metal cover plate (7) is arranged at the top of the metal tube shell (1) to realize the sealing of the cavity.
2. The L-band high-power miniaturized transceiver module based on SIP technology according to claim 1, wherein the metal shell (1) is made of oxygen-free copper and is surface-plated, and the external dimension is 30 x 25 x 7mm.
3. The miniaturized transceiver module of L-band high power based on SIP technology according to claim 1, wherein a side wall of the metal shell (1) has a bent needle insulator (2) mounting hole, another side wall opposite to the side wall has three bent needle insulator (2) mounting holes, and one side wall between the two side walls has two bent needle multicore pin (3) mounting holes.
4. The miniaturized transceiver module of a high-power type of L-band based on SIP technology of claim 3, wherein the curved needle insulator (2) on the left sidewall of the said metal tube shell (1) is the signal output end of the transmitting channel or signal input end of the receiving channel; the three bent needle insulators (2) on the right side wall of the metal tube shell (1) are respectively from top to bottom: a first receiving channel signal output end, a second receiving channel signal output end and a transmitting channel signal input end; two bent-needle multi-core pin bars (3) on the upper side wall of the metal tube shell (1) are input ends of power-on and control signals.
5. The miniaturized L-band high-power transceiver module based on the SIP technology according to claim 4, wherein the high-power amplification multi-chip circuit (4) is formed by cascading a push-stage amplifying circuit (8), a final-stage amplifying circuit (9) and a high-power switch circuit (10).
6. The L-band high-power miniaturized transceiver module based on the SIP technology according to claim 5, wherein the lower microwave multi-chip circuit (5) comprises a lower substrate (11), a negative voltage protection circuit (12), a negative voltage bias circuit (13), a transmitting channel amplifying circuit (14) and a receiving channel limiting circuit (15).
7. The miniaturized transceiver module of L-band high power based on SIP technology of claim 6, wherein the lower substrate (11) of the lower microwave multi-chip circuit (5) is grooved for placing a high power amplifier multi-chip circuit (4); the signal input end of the transmitting channel receives signals, and the signals sequentially pass through the transmitting channel amplifying circuit (14), the pushing stage amplifying circuit (8), the final stage amplifying circuit (9) and the high-power switch circuit (10) to reach the signal output end of the transmitting channel, so that the amplifying saturated output of the transmitting signals is realized.
8. The L-band high-power miniaturized transceiver module based on SIP technology according to claim 7, wherein the upper microwave multi-chip circuit (6) comprises an upper substrate (16), a receiving channel amplifying circuit (17), a receiving channel power dividing circuit (18), and a receiving channel switch filter bank circuit (19).
9. The L-band high-power miniaturized transceiver module based on the SIP technology of claim 8, wherein the signal input end of the receiving channel receives the signal, and after passing through the high-power switch circuit (10), the receiving channel limiting circuit (15), the receiving channel amplifying circuit (17) and the receiving channel power dividing circuit (18) in sequence, the signal is divided into two parts, one part reaches the signal output end of the receiving channel through the switch filter bank circuit (19), and the other part directly reaches the signal output end of the receiving channel, so that amplification and filtering of the received signal are realized.
10. The miniaturized transceiver module of high power in L-band based on SIP technology according to claim 1, wherein the material of the metal cover plate (7) is oxygen-free copper, and the cover is sealed by laser seam welding technology.
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN221995445U true CN221995445U (en) | 2024-11-12 |
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