CN221961214U - Waveguide microstrip switching structure - Google Patents
Waveguide microstrip switching structure Download PDFInfo
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- CN221961214U CN221961214U CN202420544471.8U CN202420544471U CN221961214U CN 221961214 U CN221961214 U CN 221961214U CN 202420544471 U CN202420544471 U CN 202420544471U CN 221961214 U CN221961214 U CN 221961214U
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Abstract
The utility model discloses a waveguide microstrip switching structure, which comprises: the waveguide and the dielectric substrate are provided with an interface area on the upper surface of the dielectric substrate, a microstrip metal patch and a microstrip feeder which are connected with each other are arranged in the interface area on the upper surface of the dielectric substrate, a plurality of first through holes are formed in the top metal layer and the dielectric substrate, which are close to the interface area and are arranged along the periphery of the top metal layer and the dielectric substrate at intervals, a first metal layer which is respectively connected with the top metal layer and the bottom metal layer is arranged on the inner wall of the first through hole, a plurality of second through holes which penetrate through the dielectric substrate are formed in the microstrip metal patch, a second metal layer which is respectively connected with the microstrip metal patch and the bottom metal layer is arranged on the inner wall of the second through hole, and a plurality of second through holes are arranged along the diagonal of the microstrip metal patch at equal intervals. The waveguide microstrip switching structure excites a quasi TM21 working mode of the metal patch, changes the resonance field shape of the traditional metal patch, and enables the traditional metal patch to generate an electric field component in the vertical direction, thereby realizing the transmission of electromagnetic energy.
Description
Technical Field
The utility model relates to the technical field of microwave communication, in particular to a waveguide microstrip switching structure.
Background
The microstrip transmission line is composed of a single conductor strip on a dielectric substrate, is a transmission structure widely applied to microwave integrated circuits, and has the advantages of small volume, light weight, wide use band, high reliability, low manufacturing cost and the like compared with a metal waveguide. To optimize millimeter wave communication system performance, particularly during the feed or test phase, often a means is employed to convert the input and output portions of the millimeter wave circuit into a waveguide structure. The method can obviously reduce the loss of the signal in the transmission process and can improve the overall transmission efficiency of the system. The conventional switching structure forms comprise a waveguide-microstrip structure, a waveguide-strip line structure, a waveguide-substrate integrated coaxial line structure and the like. The waveguide-microstrip structure is widely focused due to the advantages of simple structure, low cost and the like.
At present, waveguide-microstrip structures are divided into two categories: the first type is an integrated switching structure along the long side of the waveguide; the second type is an integrated switching structure along the narrow side of the waveguide. The first type of switching structure can generate larger electromagnetic energy leakage due to the notch on the long side of the waveguide so as to increase the insertion loss, and the second type of switching structure can solve the problem, but has the problem of narrow bandwidth.
Disclosure of utility model
The utility model aims to provide a waveguide microstrip switching structure which excites a quasi TM21 working mode of a metal patch, changes the resonance field shape of the traditional metal patch, and enables the traditional metal patch to generate an electric field component in the vertical direction, thereby realizing electromagnetic energy transmission.
In order to achieve the above purpose, the utility model adopts the following technical scheme: a waveguide microstrip transition structure comprising: the waveguide and the dielectric substrate are arranged on the upper surface of the dielectric substrate, a top metal layer is arranged on the upper surface of the dielectric substrate and positioned at the periphery of the interface region, a bottom metal layer is arranged on the lower surface of the dielectric substrate, and the waveguide is arranged on the upper surface of the dielectric substrate and positioned above the interface region;
The microstrip metal patch comprises a dielectric substrate, wherein an interface area is arranged on the upper surface of the dielectric substrate, microstrip metal patches and microstrip feeder lines which are connected with each other are arranged in the interface area which is positioned on the upper surface of the dielectric substrate, a plurality of first through holes are formed in the top metal layer and the dielectric substrate, which are close to the interface area and are arranged along the periphery of the interface area at intervals, first metal layers which are respectively connected with the top metal layer and the bottom metal layer are arranged on the inner walls of the first through holes, a plurality of second through holes which are communicated with the dielectric substrate are formed in the microstrip metal patches, and a plurality of second metal layers which are respectively connected with the microstrip metal patches and the bottom metal layers are arranged on the inner walls of the second through holes at equal intervals along diagonal lines of the microstrip metal patches.
The further improved scheme in the technical scheme is as follows:
1. in the above scheme, the second through holes are arranged at intervals along the direction of the arc line.
2. In the above scheme, the plurality of second through holes are staggered on two sides of the diagonal of the microstrip metal patch.
3. In the above scheme, the diameter of the first through hole is 1.1-7.1 times of the diameter of the second through hole.
Due to the application of the technical scheme, compared with the prior art, the utility model has the following advantages:
The waveguide microstrip switching structure comprises a metal layer and a dielectric substrate, wherein a plurality of first through holes are formed in the metal layer and the dielectric substrate, close to an interface area, at intervals along the periphery of the metal layer and the dielectric substrate, first metal layers respectively connected with a top metal layer and a bottom metal layer are arranged on the inner walls of the first through holes, a plurality of second through holes penetrating through the dielectric substrate are formed in the microstrip metal patch, second metal layers respectively connected with the microstrip metal patch and the bottom metal layer are arranged on the inner walls of the second through holes, the second through holes are uniformly arranged at intervals along the diagonal of the microstrip metal patch, quasi TM21 working modes of the metal patch are excited, the resonance field shape of the traditional metal patch is changed, electric field components are generated in the vertical direction, electromagnetic energy transmission is further realized, and the whole working bandwidth is improved.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a waveguide microstrip switching structure of the present utility model;
FIG. 2 is a schematic cross-sectional view of the structure of the utility model at A-A' in FIG. 1;
FIG. 3 is a schematic view showing a partial structure of a first embodiment of the present utility model;
Fig. 4 is a schematic partial structure of a second embodiment of the present utility model.
In the above figures: 1. a waveguide; 2. a first through hole; 3. a microstrip metal patch; 4. a microstrip feed line; 5. a second through hole; 6. a top metal layer; 7. a dielectric substrate; 8. a bottom metal layer; 9. an interface region.
Detailed Description
The present patent will be further understood by the specific examples given below, which are not intended to be limiting:
Example 1: a waveguide microstrip transition structure, as shown in fig. 1 and fig. 2, comprising: the waveguide 1 and the dielectric substrate 7, the upper surface of the dielectric substrate 7 is provided with an interface area 12, a top metal layer 6 is arranged on the upper surface of the dielectric substrate 7 and positioned at the periphery of the interface area 12, the lower surface of the dielectric substrate 7 is provided with a bottom metal layer 8, and the waveguide 1 is arranged on the upper surface of the dielectric substrate 7 and positioned above the interface area 12;
The microstrip metal patch 3 and the microstrip feeder 4 which are mutually connected are arranged in an interface area 12 positioned on the upper surface of the dielectric substrate 7, a plurality of first through holes 2 are formed in the top metal layer 6 and the dielectric substrate 7, which are close to the interface area 12, at intervals along the periphery of the top metal layer and the dielectric substrate 7, a first metal layer which is respectively connected with the top metal layer 6 and the bottom metal layer 8 is arranged on the inner wall of the first through hole 2, a plurality of second through holes 5 which penetrate through the dielectric substrate 7 are arranged on the microstrip metal patch 3, a second metal layer which is respectively connected with the microstrip metal patch 3 and the bottom metal layer 8 is arranged on the inner wall of the second through holes 5, and a plurality of second through holes 5 are arranged at equal intervals along the diagonal line of the microstrip metal patch 3.
As shown in fig. 3, the second through holes 5 are spaced apart in the direction of the arc line.
The diameter of the second through holes 5 is 0.2mm, and the interval can be 0.5mm.
The diameter of the first through hole 2 is 1.5 times that of the second through hole 5, and the diameter of the first through hole 2 is 0.3mm.
Example 2: a waveguide microstrip transition structure, as shown in fig. 1 and fig. 2, comprising: the waveguide 1 and the dielectric substrate 7, the upper surface of the dielectric substrate 7 is provided with an interface area 12, a top metal layer 6 is arranged on the upper surface of the dielectric substrate 7 and positioned at the periphery of the interface area 12, the lower surface of the dielectric substrate 7 is provided with a bottom metal layer 8, and the waveguide 1 is arranged on the upper surface of the dielectric substrate 7 and positioned above the interface area 12;
The microstrip metal patch 3 and the microstrip feeder 4 which are mutually connected are arranged in an interface area 12 positioned on the upper surface of the dielectric substrate 7, a plurality of first through holes 2 are formed in the top metal layer 6 and the dielectric substrate 7, which are close to the interface area 12, at intervals along the periphery of the top metal layer and the dielectric substrate 7, a first metal layer which is respectively connected with the top metal layer 6 and the bottom metal layer 8 is arranged on the inner wall of the first through hole 2, a plurality of second through holes 5 which penetrate through the dielectric substrate 7 are arranged on the microstrip metal patch 3, a second metal layer which is respectively connected with the microstrip metal patch 3 and the bottom metal layer 8 is arranged on the inner wall of the second through holes 5, and a plurality of second through holes 5 are arranged at equal intervals along the diagonal line of the microstrip metal patch 3.
As shown in fig. 4, a plurality of the second through holes 5 are staggered on two sides of the diagonal line of the microstrip metal patch 3.
The diameter of the second through holes 5 is 0.3mm, and the interval can be 0.8mm.
The diameter of the first through hole 2 is 2 times that of the second through hole 5, and the diameter of the first through hole 2 is 0.6mm.
Example 2: a waveguide microstrip transition structure comprising: the microstrip antenna comprises a dielectric substrate 7, a microstrip feeder 4 arranged on the upper surface of the dielectric substrate 7 and a waveguide 1 arranged above the microstrip feeder 4, wherein a top metal layer 6 and a bottom metal layer 8 are respectively arranged on the upper surface and the lower surface of the dielectric substrate 7, a notch area 9 is arranged on the top metal layer 6, a notch groove 2 is vertically arranged on the lower surface of the waveguide 1 above the notch area 9, and the microstrip feeder 4 positioned in the notch area 9 is connected with a microstrip metal patch 3 arranged on the upper surface of the dielectric substrate 7 and positioned in the notch area 9;
The dielectric substrate 7 is provided with a plurality of first through holes 2 which are arranged along the gap region 9 at intervals and are positioned at the outer side of the gap region 9, each first through hole 2 which is vertically penetrated is provided with a metal coating which is respectively communicated with the top metal layer 6 and the bottom metal layer 8, the dielectric substrate 7 is provided with a plurality of second through holes 5 which are arranged at intervals and are positioned right below the microstrip metal patch 3, each second through hole 5 which is vertically penetrated is provided with a metal coating which is respectively communicated with the microstrip metal patch 3 and the bottom metal layer 8 on the inner wall of the second through hole 5, and two opposite corners on the microstrip metal patch 3 are respectively provided with a gap 301, and a plurality of second through holes 5 are arranged at intervals between the other two corners of the microstrip metal patch 3.
The second through holes 5 are arranged at intervals along the direction of the arc line.
The second through holes 5 are staggered on two sides of the diagonal of the microstrip metal patch 3.
The diameter of the first through hole 2 may be 0.3-0.6mm, and the interval thereof may be 0.5-1mm.
The diameter of the first through hole 2 is 7 times the diameter of the second through hole 5.
Working principle: when the waveguide microstrip switching structure is used for energy transmission, the plane of the dielectric substrate is used as the horizontal direction, TEM guided electromagnetic waves are transmitted into the microstrip patch along the microstrip line, and the electromagnetic field around the second through hole is weak, so that a quasi TM21 working mode of the microstrip patch is excited; meanwhile, the traditional resonance field shape of the microstrip patch is changed by introducing the second through hole, so that an electric field component exists in the vertical direction of the microstrip patch, thereby realizing the transmission of electromagnetic energy and being beneficial to improving the whole working bandwidth.
When the waveguide microstrip switching structure is adopted, the quasi TM21 working mode of the metal patch is excited, the resonance field shape of the traditional metal patch is changed, an electric field component is generated in the vertical direction, and then electromagnetic energy transmission is realized.
The above embodiments are provided to illustrate the technical concept and features of the present utility model and are intended to enable those skilled in the art to understand the content of the present utility model and implement the same, and are not intended to limit the scope of the present utility model. All equivalent changes or modifications made in accordance with the spirit of the present utility model should be construed to be included in the scope of the present utility model.
Claims (4)
1. A waveguide microstrip transition structure comprising: the waveguide structure comprises a waveguide (1) and a dielectric substrate (7), wherein the upper surface of the dielectric substrate (7) is provided with an interface area (12), a top metal layer (6) is arranged on the upper surface of the dielectric substrate (7) and positioned at the periphery of the interface area (12), a bottom metal layer (8) is arranged on the lower surface of the dielectric substrate (7), and the waveguide (1) is arranged on the upper surface of the dielectric substrate (7) and positioned above the interface area (12);
The method is characterized in that: be located interface district (12) of dielectric substrate (7) upper surface and be provided with interconnect's microstrip metal paster (3) and microstrip feeder (4), be close to interface district (12) and be provided with a plurality of first through-hole (2) along its periphery interval on top metal layer (6), dielectric substrate (7), be provided with the first metal layer of being connected with top metal layer (6), bottom metal layer (8) respectively on the inner wall of this first through-hole (2), be provided with second through-hole (5) of a plurality of link up dielectric substrate (7) on microstrip metal paster (3), all be provided with the second metal layer that is connected with microstrip metal paster (3), bottom metal layer (8) respectively on this second through-hole (5) inner wall, a plurality of second through-hole (5) are equidistant along the diagonal of microstrip metal paster (3).
2. The waveguide microstrip transition structure according to claim 1, wherein: the second through holes (5) are arranged at intervals along the direction of the arc line.
3. The waveguide microstrip transition structure according to claim 1, wherein: the second through holes (5) are staggered on two sides of the diagonal line of the microstrip metal patch (3).
4. The waveguide microstrip transition structure according to claim 1, wherein: the diameter of the first through hole (2) is 1.1-7.1 times of the diameter of the second through hole (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202420544471.8U CN221961214U (en) | 2024-03-20 | 2024-03-20 | Waveguide microstrip switching structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202420544471.8U CN221961214U (en) | 2024-03-20 | 2024-03-20 | Waveguide microstrip switching structure |
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| Publication Number | Publication Date |
|---|---|
| CN221961214U true CN221961214U (en) | 2024-11-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202420544471.8U Active CN221961214U (en) | 2024-03-20 | 2024-03-20 | Waveguide microstrip switching structure |
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| CN (1) | CN221961214U (en) |
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- 2024-03-20 CN CN202420544471.8U patent/CN221961214U/en active Active
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