CN220552918U - Dynamic grid electrode charge test circuit of gallium nitride power tube - Google Patents
Dynamic grid electrode charge test circuit of gallium nitride power tube Download PDFInfo
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Abstract
The utility model discloses a dynamic grid electrode charge testing circuit of a gallium nitride power tube. The circuit comprises: gallium nitride power tube to be measured; the high-voltage source module and the load module are connected in series between the source electrode and the drain electrode of the gallium nitride power tube to be tested; the driving module is electrically connected with the grid electrode and the source electrode of the gallium nitride power tube to be tested; the constant signal source module is connected in series between the grid electrode of the gallium nitride power tube to be tested and the driving module; the constant signal source module is used for providing a constant current signal or a constant voltage signal for the grid electrode of the gallium nitride power tube to be tested; the sampling module is electrically connected between the grid electrode and the source electrode of the gallium nitride power tube to be tested; the sampling module is used for collecting the gate-source voltage of the gallium nitride power tube to be tested. The embodiment of the utility model is beneficial to perfecting the dynamic characteristic test of the gallium nitride power tube.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a dynamic grid electrode charge testing circuit of a gallium nitride power tube.
Background
Gallium nitride (GaN) is used as an important semiconductor material of a third-generation power device, has the unique characteristics of large forbidden bandwidth, high breakdown electric field, high electron saturation drift speed, small dielectric constant, good chemical stability and the like, and has larger output power and better frequency characteristic.
The technical breakthrough of gallium nitride, which is a third-generation semiconductor material, enables the third-generation semiconductor to realize more scene applications, for example, a gallium nitride electronic device has the characteristics of high frequency, high conversion efficiency, high breakdown voltage and the like, and has infinite possibility of micro display, mobile phone quick charge, gallium nitride automobile and the like.
Gallium nitride has wide application range, such as main fields of 5G base stations, extra-high voltage, new energy charging piles, inter-city high-speed rails and the like. In addition, the high-efficiency electric energy conversion characteristic of gallium nitride can help to realize the high-efficiency electric energy conversion in the fields of photovoltaics, wind power (electric energy production), direct-current ultra-high voltage transmission (electric energy transmission), new energy automobiles, industrial power supplies, locomotive traction, consumption power supplies (electric energy use) and the like.
Gallium nitride devices have some defects, particularly, the characteristics of gallium nitride power devices are limited by the defects introduced by materials and device growth, the core is represented by the increase of on-resistance, the power loss of the devices in an on state is increased, and the power, the efficiency and the reliability of the devices are seriously affected. Therefore, the dynamic property test of gallium nitride is very important for the increase of the requirements of gallium nitride in different fields. However, the dynamic characteristic test of the gallium nitride power tube in the prior art is not perfect, and the dynamic characteristic monitoring means commonly used in the prior art is mainly dynamic resistance test.
Disclosure of Invention
The utility model provides a dynamic grid electrode charge testing circuit of a gallium nitride power tube, which is favorable for perfecting the dynamic characteristic test of the gallium nitride power tube.
The utility model provides a dynamic characteristic test circuit of a gallium nitride power tube, which comprises:
gallium nitride power tube to be measured;
the high-voltage source module and the load module are connected in series between the source electrode and the drain electrode of the gallium nitride power tube to be tested;
the driving module is electrically connected with the grid electrode and the source electrode of the gallium nitride power tube to be tested;
the constant signal source module is connected in series between the grid electrode of the gallium nitride power tube to be tested and the driving module; the constant signal source module is used for providing a constant current signal or a constant voltage signal for the grid electrode of the gallium nitride power tube to be tested;
the sampling module is electrically connected between the grid electrode and the source electrode of the gallium nitride power tube to be tested; the sampling module is used for collecting the gate-source voltage of the gallium nitride power tube to be tested.
Optionally, the constant signal source module includes: constant current devices or constant voltage devices.
Optionally, the constant signal source module includes a constant current device, and the constant current device includes:
the drain electrode of the MOS tube is used as the input end of the constant current device, and the grid electrode of the MOS tube is used as the output end of the constant current device;
the first resistor is electrically connected between the source electrode and the grid electrode of the MOS tube.
Optionally, the constant signal source module includes a constant voltage device, the constant voltage device includes:
and the first end of the second resistor is used as an input end of the constant voltage device, and the second end of the second resistor is used as an output end of the constant voltage device.
Optionally, the dynamic gate charge testing circuit of the gallium nitride power tube further comprises a gate current collecting device, and the gate current collecting device is connected to two ends of the second resistor in parallel.
Optionally, the sampling module includes: oscilloscopes or voltmeters or voltage acquisition devices.
Optionally, the high-voltage source module includes: and the energy storage capacitor and the high-voltage source are connected in parallel.
Optionally, the load module includes: load resistance and/or load inductance units connected in series; the load resistor is a fixed resistor or an adjustable resistor, and the load inductance unit is a fixed inductance or an adjustable inductance;
wherein, load inductance unit includes load inductance and freewheel diode that parallel connection.
The embodiment of the utility model provides a dynamic characteristic test circuit of a gallium nitride power tube, which comprises a constant signal source module, a driving module and a power supply module, wherein the constant signal source module is connected in series between a grid electrode of the gallium nitride power tube to be tested and the driving module; the constant signal source module is used for providing a constant current signal or a constant voltage signal for the grid electrode of the gallium nitride power tube to be tested. The circuit also comprises a sampling module electrically connected between the grid electrode and the source electrode of the gallium nitride power tube to be tested; the sampling module is used for collecting gate-source voltage of the gallium nitride power tube to be tested. Therefore, the dynamic characteristic test circuit of the gallium nitride power tube can provide a constant current signal or a constant voltage signal for the grid electrode of the gallium nitride power tube to be tested, and the sampling module is used for collecting the grid source voltage of the gallium nitride power tube to be tested, so that the dynamic grid charge quantity of the gallium nitride power tube to be tested is obtained, and the dynamic grid charge test is realized.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the utility model or to delineate the scope of the utility model. Other features of the present utility model will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a dynamic gate charge test circuit of a gan power tube according to an embodiment of the utility model;
FIG. 2 is a schematic diagram of a dynamic gate charge test circuit of another GaN power tube according to an embodiment of the utility model;
fig. 3 is a schematic circuit diagram of a constant current device according to an embodiment of the present utility model;
FIG. 4 is a timing diagram of a dynamic gate charge double pulse according to an embodiment of the present utility model;
FIG. 5 is a timing diagram of multiple pulses of dynamic gate charges according to an embodiment of the present utility model;
FIG. 6 is a schematic diagram of a dynamic gate charge test circuit of a GaN power tube according to an embodiment of the utility model;
FIG. 7 is a schematic diagram of a dynamic gate charge test circuit of a GaN power tube according to an embodiment of the utility model;
fig. 8 is a schematic circuit diagram of a constant voltage device according to an embodiment of the present utility model;
fig. 9 is a schematic diagram of calculating an amount of on-state charge in a constant voltage mode according to an embodiment of the present utility model.
Detailed Description
In order that those skilled in the art will better understand the present utility model, a technical solution in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present utility model without making any inventive effort, shall fall within the scope of the present utility model.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present utility model and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the utility model described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Fig. 1 is a schematic diagram of a dynamic gate charge test circuit of a gan power tube according to an embodiment of the utility model. Referring to fig. 1, the dynamic gate charge test circuit of the gallium nitride power tube comprises:
a gallium nitride power tube T1 to be tested;
the high-voltage source module 10 and the load module 20 are connected in series between the source electrode S and the drain electrode D of the gallium nitride power tube T1 to be tested;
the driving module 30 is electrically connected with the grid G and the source S of the gallium nitride power tube T1 to be tested; wherein the driving module 30 is a gate driver.
A constant signal source module 40 connected in series between the gate G of the gan power tube T1 to be tested and the driving module 30; the constant signal source module 40 is configured to provide a constant current signal or a constant voltage signal to the gate G of the gallium nitride power tube T1 to be tested;
the sampling module 50 is electrically connected between the grid G and the source S of the gallium nitride power tube T1 to be tested; the sampling module 50 is used for collecting the gate-source voltage of the gallium nitride power tube T1 to be tested.
The embodiment of the utility model can provide a constant current signal or a constant voltage signal for the grid G of the gallium nitride power tube T1 to be tested, so that the dynamic characteristic test circuit of the gallium nitride power tube can realize the dynamic grid charge test.
The method for testing the dynamic gate charge by adopting the dynamic characteristic test circuit of the gallium nitride power tube is that the driving module 30 and the constant signal source module 40 are used for driving the gate G of at least two pulses, the gallium nitride power tube T1 to be tested is driven to be respectively turned on and off once in a single pulse period, and the gate source voltage of the gallium nitride power tube T1 to be tested is collected by the sampling module 50 to form a dynamic time sequence diagram; recording the time difference between the initial voltage value and the set voltage value of the gate-source voltage; and calculating the dynamic gate charge quantity of the gallium nitride power tube T1 to be tested according to the time difference. And judging the dynamic characteristics of the gallium nitride power tube T1 to be tested according to the dynamic grid charge quantity obtained through calculation of at least two pulse periods. The initial voltage value may be 0V, or may be another preset voltage value, for example, 0.1V, and the set voltage value may be 6V, or may be another voltage value, which is not limited in this embodiment.
Fig. 2 is a schematic diagram of a dynamic gate charge test circuit of another gan power transistor according to an embodiment of the utility model. Referring to fig. 2, the constant signal source module 40 optionally includes a constant current device 41, where the constant current device 41 is configured to provide a constant current signal to the gate G of the gan power tube T1 to be tested.
The two ends of the constant current device can be provided with the grid current acquisition device, and the purpose of the grid current acquisition device is to verify whether the signal of the constant current device is constant current or not so as to improve the accuracy of dynamic grid charge test.
With continued reference to fig. 2, the input of the driving module 30 is optionally a digital control signal source, which is used in conjunction with the driving module 30 to provide a high-speed driving signal for the gate G, based on the above embodiments.
With continued reference to fig. 2, the high voltage source module 10, on the basis of the above embodiments, optionally includes: the energy storage capacitor C1 and the high voltage source HVI are connected in parallel. The energy storage capacitor C1 is a large capacitor, and the high voltage source HVI charges the energy storage capacitor C1 to obtain a rapid high voltage output.
Optionally, the sampling module 50 includes an oscilloscope for performing test sampling on the charge Qg of the gate G, based on the above embodiments. The comparison calculation is performed by converting the pulse waveform of the gate-source voltage VGS of the gallium nitride power transistor T1 to be measured into data, for example. In other alternative implementations, the sampling module 50 may also be a voltmeter or other voltage acquisition device, which is not limited in this embodiment.
Fig. 3 is a schematic circuit diagram of a constant current device according to an embodiment of the present utility model. Referring to fig. 3, in one embodiment of the present utility model, optionally, the constant current device 41 includes: MOS pipe T2 and first resistance R1. The drain electrode D of the MOS tube T2 is used as the input end of the constant current device 41, and the grid electrode G of the MOS tube is used as the output end of the constant current device; the first resistor R1 is electrically connected between the source S and the gate G of the MOS transistor. The constant current device 41 is simple in structure and easy to realize.
Illustratively, the dynamic gate charge test circuit shown in fig. 2 can be used to implement a dynamic gate charge test in a constant current mode, which is described in detail below in conjunction with a timing diagram.
Fig. 4 is a timing diagram of a dynamic gate charge double pulse according to an embodiment of the present utility model. Referring to fig. 2 and 4, in an embodiment of the present utility model, optionally, a method for dynamic gate charge double pulse test in a constant current mode is as follows: the high voltage source HVI charges the energy storage capacitor C1, and after the energy storage capacitor C1 reaches a preset voltage (for example, 6V), the test circuit is ready to be rapidly supplied with high voltage.
The driving module 30 is controlled by a digital control signal source, the constant current device 41 performs gate driving, and the on and off of the gallium nitride power tube T1 to be tested in a constant current mode are controlled, so that the double pulse test of the gallium nitride power tube T1 to be tested is realized. During the on and off periods of each time of the gan power tube T1 to be tested, the sampling module 50 collects the gate-source voltage of the gan power tube T1 to be tested, so as to form a dynamic timing diagram as shown in fig. 4.
Specifically, before time T0, the energy storage capacitor C1 provides high voltage for the gallium nitride power tube T1 to be tested, at this time, the gate G is not turned on, and the voltage VDS at both ends of the drain D and the source S is high voltage; at time t0, the digital control signal source inputs a high-level signal, and the grid G is conducted; after lasting for 10us, at the time t1', the digital control signal source becomes low level; at time T1, the gallium nitride power tube T1 to be tested is turned off, and the voltage VGS of the grid G and the source S is 0. After the time period T passes, the on and off processes of the gallium nitride power tube T1 to be tested are repeated, and a time sequence diagram comprising the time T2, the time T2', the time T3 and the time T3' is obtained, so that a double-pulse time sequence diagram is obtained.
The sampling module 50 collects the actual voltage waveforms of the voltages VGS of the gate G and the source S in this process. The dynamic gate charge qg=i×t of the gate G; wherein I is the current in the constant current mode, and T is the time difference between the voltage VGS of the gate G and the source S from 0 to the preset voltage (e.g., 6V) when the gallium nitride power tube T1 to be tested is turned on, or the time difference between the voltage VGS of the gate G and the source S from the preset voltage (e.g., 6V) to 0V when the gallium nitride power tube T1 to be tested is turned off.
Further, in the above embodiment, t0-t1 (e.g. 10 us) is the first pulse duration, t is the high voltage duration, and t2-t3 is the second pulse duration, and the dynamic gate charge amount Qg under different working conditions can be obtained by controlling the durations of t0-t1, t2-t 3.
Alternatively, the dynamic gate charge amount Qg includes an on charge amount qg_on and an off charge amount qg_off. The calculation of the dynamic gate charge amount for the double pulse may include an on charge amount qg1_on and an off charge amount qg1_off for the first pulse duration, and an on charge amount qg2_on and an off charge amount qg2_off for the second pulse duration. The on charge qg1_on is the dynamic gate charge of the gallium nitride power tube T1 to be tested at the turn-on time T0-T0', and the off charge qg1_off is the dynamic gate charge of the gallium nitride power tube T1 to be tested at the turn-off time T1-T1'. The on charge quantity Qg2_on is the dynamic gate charge quantity of the turn-on time T2-T2 'of the gallium nitride power tube T1 to be tested, and the off charge quantity Qg1_off is the dynamic gate charge quantity of the turn-off time T3-T3' of the gallium nitride power tube T1 to be tested.
In this embodiment, the dynamic characteristics of the gallium nitride power tube T1 to be tested when turned on may be represented by the difference or the ratio of the on-state charge qg1_on to the on-state charge qg2_on, and the dynamic characteristics of the gallium nitride power tube T1 to be tested when turned off may be represented by the difference or the ratio of the off-state charge qg1_off to the off-state charge qg2_off. It can be understood that in other implementation manners, other comparison calculation manners can be performed on the conducting charge amounts obtained by different pulses to characterize the dynamic characteristics of the gallium nitride power tube T1 when being started; the comparison calculation of other modes can be performed on the turn-off charge amounts obtained by different pulses to characterize the dynamic characteristics of the gallium nitride power tube T1 when turned off, and the embodiment is not limited by the dynamic characteristics.
Fig. 5 is a timing diagram of multiple pulses of dynamic gate charges according to an embodiment of the present utility model. Referring to fig. 2 and 5, in one embodiment of the present utility model, optionally, the circuit shown in fig. 2 may be used to perform a multi-pulse dynamic gate charge test in a constant current mode. Specifically, the method for performing the multi-pulse dynamic gate charge test and the double-pulse dynamic gate charge test is similar, t0-t1 is the first pulse duration, t is the high voltage duration, t2-t3 is the second pulse duration, t4-t5 is the third pulse duration, … …, and t (2X-2) -t (2X-1) is the xth pulse duration. The dynamic gate charge amount Qg1 (including the on charge amount qg1_on and the off charge amount qg1_off) in the first pulse period, the dynamic gate charge amount Qg2 (including the on charge amount qg2_on and the off charge amount qg2_off) in the second pulse period, the dynamic gate charge amount Qg3 (including the on charge amount qg3_on and the off charge amount qg3_off) in the third pulse period, the … …, and the dynamic gate charge amount Qg3 (including the on charge amount QgX _on and the off charge amount QgX _off) in the X-th pulse period are further calculated.
In one implementation, the dynamic characteristics of the gan power transistor T1 to be tested when turned on may be characterized by the difference or ratio between the conduction charge amounts qg1_on, qg2_on, and QgX _on, etc., for example, each conduction charge amount is compared with the conduction charge amount qg1_on. The difference or ratio of the off-charge amount qg1_off, the off-charge amount qg2_off, and the off-charge amount QgX _off, etc. are used to characterize the dynamic characteristics of the gallium nitride power tube T1 to be tested when turned off, for example, each off-charge amount is compared with the off-charge amount qg1_off. Thus, the dynamic characteristics of the device when on and off can be characterized by the amount of dynamic gate charge.
Fig. 6 is a schematic diagram of a dynamic gate charge test circuit of a gan power transistor according to another embodiment of the utility model. Referring to fig. 6, the constant signal source module 40 may optionally include a constant voltage device 42, where the constant voltage device 42 is configured to provide a constant voltage signal to the gate G of the gan power transistor T1 to be tested.
Fig. 7 is a schematic diagram of a dynamic gate charge test circuit of a gan power transistor according to another embodiment of the utility model. Referring to fig. 7, the test circuit may further include a gate current collecting device 80, where the gate current collecting device 80 is connected in parallel to two ends of the constant voltage device, and the gate current collecting device 80 is used for collecting the gate current.
Fig. 8 is a schematic circuit diagram of a constant voltage device according to an embodiment of the present utility model. Referring to fig. 8, in one embodiment of the present utility model, optionally, the constant pressure device 42 includes: the first end of the second resistor R2 is used as the input end of the constant voltage device 42, and the second end of the second resistor R2 is used as the output end of the constant voltage device 42. The constant pressure device 42 is simple in structure and easy to implement.
Illustratively, the dynamic gate charge test in the constant voltage mode can be implemented using the dynamic characteristic test circuit shown in fig. 7, which is described in detail below in conjunction with the timing diagrams. Specifically, since the timing charts measured in the constant current mode and the constant voltage mode are similar in shape, the timing charts shown in fig. 4 and 5 can also be used to represent the timing charts in the constant voltage mode.
Referring to fig. 7 and 4, in an embodiment of the present utility model, optionally, a method of dynamic gate charge double pulse test in a constant voltage mode is: the high voltage source HVI charges the energy storage capacitor C1, and after the energy storage capacitor C1 reaches a preset voltage (for example, 6V), the test circuit is ready to be rapidly supplied with high voltage.
The driving module 30 is controlled by a digital control signal source, the constant voltage device 42 performs gate driving, and controls the on and off of the gallium nitride power tube T1 to be tested in a constant voltage mode, so that the double pulse test of the gallium nitride power tube T1 to be tested is realized.
Specifically, before time T0, the energy storage capacitor C1 provides high voltage for the gallium nitride power tube T1 to be tested, at this time, the gate G is not turned on, and the voltage VDS at both ends of the drain D and the source S is high voltage; at time t0, the digital control signal source inputs a high-level signal, and the grid G is conducted; after lasting for 10us, at the time t1', the digital control signal source becomes low level; at time T1, the gallium nitride power tube T1 to be tested is turned off, and the voltage VGS of the grid G and the source S is 0. After the time period T passes, the on and off processes of the gallium nitride power tube T1 to be tested are repeated, and a time sequence diagram comprising the time T2, the time T2', the time T3 and the time T3' is obtained, so that a double-pulse time sequence diagram is obtained.
The sampling module 50 collects the actual voltage waveforms of the voltages VGS of the gate G and the source S in this process.
Fig. 9 is a schematic diagram of calculating an amount of on-state charge in a constant voltage mode according to an embodiment of the present utility model. The gate current acquisition device 80 acquires a waveform chart of the gate current IGS in real time, referring to fig. 9, at time T0-T0', an integral area of the gate current IGS with respect to time coordinates is an on charge amount qg_on of the gallium nitride power tube T1 to be tested under the first pulse duration, and at time T1-T1', an integral area of the gate current IGS with respect to time coordinates is an off charge amount qg_off of the gallium nitride power tube T1 to be tested under the first pulse duration. At the time T2-T2', the integral area of the grid current IGS and the time coordinate is the conduction charge quantity Qg_on of the gallium nitride power tube T1 to be tested under the first pulse duration, and at the time T3-T3', the integral area of the grid current IGS and the time coordinate is the turn-off charge quantity Qg_off of the gallium nitride power tube T1 to be tested under the first pulse duration.
Further, in the above embodiment, t0-t1 is the first pulse duration, t is the high voltage duration, and t2-t3 is the second pulse duration, and the dynamic gate charge amount Qg under different working conditions can be obtained by controlling the durations of t0-t1, t, and t2-t 3.
In an alternative implementation manner, the dynamic characteristics of the gallium nitride power tube T1 to be tested when turned on may be represented by the difference or the ratio of the on-state charge qg1_on to the on-state charge qg2_on, and the dynamic characteristics of the gallium nitride power tube T1 to be tested when turned off may be represented by the difference or the ratio of the off-state charge qg1_off to the off-state charge qg2_off.
Referring to fig. 7 and 5, in one embodiment of the present utility model, a multi-pulse dynamic gate charge test may also be performed in a constant voltage mode, optionally using the circuit shown in fig. 7. Specifically, the method for performing the multi-pulse dynamic gate charge test and the double-pulse dynamic gate charge test is similar, t0-t1 is the first pulse duration, t is the high voltage duration, t2-t3 is the second pulse duration, t4-t5 is the third pulse duration, … …, and t (2X-2) -t (2X-1) is the xth pulse duration. The dynamic gate charge amount Qg1 (including the on charge amount qg1_on and the off charge amount qg1_off) in the first pulse period, the dynamic gate charge amount Qg2 (including the on charge amount qg2_on and the off charge amount qg2_off) in the second pulse period, the dynamic gate charge amount Qg3 (including the on charge amount qg3_on and the off charge amount qg3_off) in the third pulse period, the … …, and the dynamic gate charge amount Qg3 (including the on charge amount QgX _on and the off charge amount QgX _off) in the X-th pulse period are further calculated.
The dynamic characteristics of the gallium nitride power tube T1 to be tested when turned on are characterized by the difference or the ratio between the conduction electric charge quantity qg1_on, the conduction electric charge quantities qg2_on and QgX _on, and the like, for example, each conduction electric charge quantity is compared with the conduction electric charge quantity qg1_on. The difference or ratio of the off-charge amount qg1_off, the off-charge amount qg2_off, and the off-charge amount QgX _off, etc. are used to characterize the dynamic characteristics of the gallium nitride power tube T1 to be tested when turned off, for example, each off-charge amount is compared with the off-charge amount qg1_off. Thus, the dynamic characteristics of the device when on and off can be characterized by the amount of dynamic gate charge.
With continued reference to fig. 2 and 7, the load module 20 may optionally include, based on the above embodiments: an adjustable load resistor R4 and/or an adjustable load inductance unit (not shown in the figures) connected in series. Wherein the adjustable load inductance unit comprises an adjustable load inductance and a freewheel diode connected in parallel.
Wherein, by adjusting the resistance value of the adjustable load resistor R4, the adjustment of different current values IDS can be realized. By adjusting the inductance value of the adjustable load inductance unit, adjustment of different current values IDS can be achieved.
In other embodiments, the load resistor may be set to be a fixed resistor and/or the load inductance unit may be a fixed inductance unit.
In summary, the dynamic characteristic test circuit of the gallium nitride power tube provided by the embodiment of the utility model comprises a constant signal source module connected in series between the grid electrode of the gallium nitride power tube to be tested and the driving module; the constant signal source module is used for providing a constant current signal or a constant voltage signal for the grid electrode of the gallium nitride power tube to be tested. The circuit also comprises a sampling module electrically connected between the grid electrode and the source electrode of the gallium nitride power tube to be tested; the sampling module is used for collecting gate-source voltage of the gallium nitride power tube to be tested. Therefore, the dynamic characteristic test circuit of the gallium nitride power tube can provide a constant current signal or a constant voltage signal for the grid electrode of the gallium nitride power tube to be tested, and the sampling module is used for collecting the grid source voltage of the gallium nitride power tube to be tested, so that the dynamic grid charge quantity of the gallium nitride power tube to be tested is obtained, and the dynamic grid charge test is realized.
The dynamic grid electrode charge testing circuit of the gallium nitride power tube provided by the embodiment of the utility model comprises the following steps:
the driving module 30 and the constant signal source module 40 are used for carrying out grid driving of at least two pulses, and the gallium nitride power tube T1 to be tested is driven to be respectively turned on and off once in a single pulse period;
during the on and off periods of the gallium nitride power tube T1 to be tested, the sampling module 50 is used for collecting the gate-source voltage of the gallium nitride power tube T1 to be tested to form a dynamic time sequence diagram; recording the time difference between the initial voltage value and the set voltage value of the gate-source voltage; calculating the dynamic gate charge quantity of the gallium nitride power tube T1 to be tested in a single pulse period according to the time difference;
and judging the dynamic characteristics of the gallium nitride power tube T1 to be tested according to the dynamic grid charge quantity obtained through calculation of at least two pulse periods.
In an alternative implementation manner, before the gallium nitride power tube T1 to be tested is driven in a pulse period, the high-voltage source HVI is controlled to charge the energy storage capacitor C1 for a certain period of time, and after the energy storage capacitor C1 is full of electric quantity, the gallium nitride power tube T1 to be tested is driven in a pulse period.
On the basis of the above embodiments, optionally, the constant signal source module 40 is a constant current device; the method for calculating the dynamic gate charge quantity of the gallium nitride power tube T1 to be measured according to the time difference comprises the following steps:
and multiplying the constant current value output by the constant current device by the time difference to obtain the dynamic gate charge quantity of the gallium nitride power tube T1 to be tested.
On the basis of the above embodiments, the constant signal source module 40 is optionally a constant voltage device; the method for calculating the dynamic gate charge quantity of the gallium nitride power tube T1 to be measured according to the time difference comprises the following steps:
the waveform area of the gate-source voltage in the time difference is the dynamic gate charge quantity of the gallium nitride power tube T1 to be tested.
On the basis of the above embodiments, optionally, the dynamic gate charge amount of the gallium nitride power tube T1 to be tested in a single pulse period includes an on charge amount and an off charge amount; the on charge quantity is calculated by data of the gallium nitride power tube T1 to be tested in an on period in a single pulse period, and the off charge quantity is calculated by data of the gallium nitride power tube T1 to be tested in an off period in the single pulse period.
The above method for testing the dynamic gate charges is specifically described in the circuit embodiments, and is not described herein again.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present utility model may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present utility model are achieved, and the present utility model is not limited herein.
The above embodiments do not limit the scope of the present utility model. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included in the scope of the present utility model.
Claims (8)
1. A dynamic gate charge test circuit for a gallium nitride power tube, comprising:
gallium nitride power tube to be measured;
the high-voltage source module and the load module are connected in series between the source electrode and the drain electrode of the gallium nitride power tube to be tested;
the driving module is electrically connected with the grid electrode and the source electrode of the gallium nitride power tube to be tested;
the constant signal source module is connected in series between the grid electrode of the gallium nitride power tube to be tested and the driving module; the constant signal source module is used for providing a constant current signal or a constant voltage signal for the grid electrode of the gallium nitride power tube to be tested;
the sampling module is electrically connected between the grid electrode and the source electrode of the gallium nitride power tube to be tested; the sampling module is used for collecting the gate-source voltage of the gallium nitride power tube to be tested.
2. The circuit of claim 1, wherein the constant signal source module comprises: constant current devices or constant voltage devices.
3. The circuit of claim 2, wherein the constant signal source module comprises a constant current device comprising:
the drain electrode of the MOS tube is used as the input end of the constant current device, and the grid electrode of the MOS tube is used as the output end of the constant current device;
the first resistor is electrically connected between the source electrode and the grid electrode of the MOS tube.
4. The circuit of claim 2, wherein the constant signal source module comprises a constant voltage device comprising:
and the first end of the second resistor is used as an input end of the constant voltage device, and the second end of the second resistor is used as an output end of the constant voltage device.
5. The circuit of claim 4, further comprising a gate current collector connected in parallel across the second resistor.
6. The circuit of claim 1, wherein the sampling module comprises: oscilloscopes or voltmeters or voltage acquisition devices.
7. The circuit of claim 1, wherein the high voltage source module comprises: and the energy storage capacitor and the high-voltage source are connected in parallel.
8. The dynamic gate charge test circuit of a gallium nitride power tube according to claim 1, wherein the load module comprises: load resistance and/or load inductance units connected in series; the load resistor is a fixed resistor or an adjustable resistor, and the load inductance unit is a fixed inductance or an adjustable inductance;
wherein, load inductance unit includes load inductance and freewheel diode that parallel connection.
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| CN202322126562.8U CN220552918U (en) | 2023-08-08 | 2023-08-08 | Dynamic grid electrode charge test circuit of gallium nitride power tube |
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| CN202322126562.8U CN220552918U (en) | 2023-08-08 | 2023-08-08 | Dynamic grid electrode charge test circuit of gallium nitride power tube |
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