CN213043651U - High-efficiency power amplifier based on grid tuning technology - Google Patents
High-efficiency power amplifier based on grid tuning technology Download PDFInfo
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- CN213043651U CN213043651U CN202022257121.8U CN202022257121U CN213043651U CN 213043651 U CN213043651 U CN 213043651U CN 202022257121 U CN202022257121 U CN 202022257121U CN 213043651 U CN213043651 U CN 213043651U
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Abstract
The utility model discloses a high-efficiency power amplifier based on grid tuning technology, which is provided with a plurality of power amplifier tube FETs connected with grids and arranged in parallel, and a resonant network connected with the grid of any power amplifier tube FET; the resonant network is composed of a capacitor C1 and an inductor L1, wherein one end of the capacitor C1 is connected with the grid electrode of the power amplifier FET after being connected in series, and the other end of the capacitor C1 is grounded. Through the scheme, the power amplifier has the advantages of simple structure, high efficiency of power amplification and the like, and has high practical value and popularization value in the technical field of power amplifiers.
Description
Technical Field
The utility model belongs to the technical field of the power amplifier technique and specifically relates to a high efficiency power amplifier based on grid tuning technique.
Background
At present, in a conventional harmonic tuning power amplifier, an inductor L and a capacitor C are combined to form specific impedances for second harmonic (2fo) and 3 th harmonic (3fo) at an output port of the power amplifier, so that a high-efficiency working state of the power amplifier is realized, but the conventional harmonic tuning power amplifier has the defect that the characteristic output port of an LC resonance network used at the output port can only be realized by aiming at a narrow central frequency section by using the inductor L and the capacitor C, and cannot realize wide-frequency-band working of the power amplifier.
Therefore, a high-efficiency power amplifier based on the grid tuning technology, which has a simple structure and high power amplification efficiency, is urgently needed to be provided.
SUMMERY OF THE UTILITY MODEL
To the above problem, an object of the utility model is to provide a high efficiency power amplifier based on grid tuning technique, the utility model discloses a technical scheme as follows:
a high-efficiency power amplifier based on a grid tuning technology is provided with a plurality of power amplifier tube FETs (field effect transistors) which are connected with grids and are arranged in parallel, and a resonant network connected with the grid of any power amplifier tube FET; the resonant network is composed of a capacitor C1 and an inductor L1, wherein one end of the capacitor C1 is connected with the grid electrode of the power amplifier FET after being connected in series, and the other end of the capacitor C1 is grounded.
Preferably, the capacitance C1 and the inductance L1 satisfy the oscillating frequency relationship of the resonant circuit, and the expression is as follows:
f is0Indicating the operating frequency of the power amplifier tube.
Compared with the prior art, the utility model discloses following beneficial effect has:
the utility model skillfully adds LC resonance network or resonance network composed of distributed elements such as transmission lines and the like into the grid of the power amplifier tube; the area of a high-efficiency impedance area is large, the center frequency of coverage is wide, and the processing efficiency is high; in conclusion, the invention has the advantages of simple structure, high efficiency of power amplification and the like, and has very high practical value and popularization value in the technical field of power amplifiers.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as a limitation of the scope of protection, and for those skilled in the art, other related drawings may be obtained from these drawings without inventive effort.
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is an impedance distribution diagram of the present invention.
Detailed Description
To make the objectives, technical solutions and advantages of the present application more clear, the present invention will be further described with reference to the accompanying drawings and examples, and embodiments of the present invention include, but are not limited to, the following examples. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Examples
As shown in fig. 1 to fig. 2, the present embodiment provides a high efficiency power amplifier based on a gate tuning technique, which includes a plurality of power amplifier FETs connected to gates and arranged in parallel, and a resonant network connected to the gate of any one of the power amplifier FETs; the resonant network is composed of a capacitor C1 and an inductor L1, wherein one end of the capacitor C1 is connected with the grid electrode of the power amplifier FET after being connected in series, and the other end of the capacitor C1 is grounded. The resonant network is typically designed to resonate at around 2fo frequency, where the inductance L can be replaced by a transmission line.
It can be known from simulation tests that the high-efficiency impedance area is changed from a small area (shaded area) shown in the left diagram in fig. 2 to a large area shown in the right diagram, that is, the high-efficiency operation of the power amplifier can be realized as long as the impedance of the load, such as the input resistance of the antenna or the next-stage amplifier, falls in the shaded area.
The above-mentioned embodiments are merely preferred embodiments of the present invention, and are not limitations on the protection scope of the present invention, but all the changes made by adopting the design principle of the present invention and performing non-creative work on this basis shall fall within the protection scope of the present invention.
Claims (1)
1. A high-efficiency power amplifier based on a grid tuning technology is provided with a plurality of power amplifier tube FETs which are connected with grids and are arranged in parallel, and is characterized by further comprising a resonant network connected with the grids of any power amplifier tube FET; the resonant network is composed of a capacitor C1 and an inductor L1, wherein one end of the capacitor C1 is connected with the grid electrode of the power amplifier FET after being connected in series, and the other end of the capacitor C1 is grounded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022257121.8U CN213043651U (en) | 2020-10-12 | 2020-10-12 | High-efficiency power amplifier based on grid tuning technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022257121.8U CN213043651U (en) | 2020-10-12 | 2020-10-12 | High-efficiency power amplifier based on grid tuning technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213043651U true CN213043651U (en) | 2021-04-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022257121.8U Active CN213043651U (en) | 2020-10-12 | 2020-10-12 | High-efficiency power amplifier based on grid tuning technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213043651U (en) |
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2020
- 2020-10-12 CN CN202022257121.8U patent/CN213043651U/en active Active
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