CN212783484U - Heterojunction solar cell and photovoltaic module - Google Patents
Heterojunction solar cell and photovoltaic module Download PDFInfo
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- CN212783484U CN212783484U CN202021771521.4U CN202021771521U CN212783484U CN 212783484 U CN212783484 U CN 212783484U CN 202021771521 U CN202021771521 U CN 202021771521U CN 212783484 U CN212783484 U CN 212783484U
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Abstract
The utility model provides a heterojunction solar cell and photovoltaic module, wherein relate to heterojunction solar cell include monocrystalline silicon substrate, set up in the first intrinsic amorphous layer of monocrystalline silicon substrate front and set up in the second intrinsic amorphous layer of monocrystalline silicon substrate back, the thickness of first intrinsic amorphous layer is less than the thickness of second intrinsic amorphous layer; the thickness of the first intrinsic amorphous layer is relatively small, so that the short wave absorption of the front side of the heterojunction solar cell can be effectively reduced, and the short circuit current of the heterojunction solar cell is improved; the second intrinsic amorphous layer is relatively thick, so that the passivation effect of the back of the heterojunction solar cell can be improved, the open-circuit voltage of the heterojunction solar cell is improved, and the photoelectric conversion efficiency of the heterojunction solar cell can be comprehensively optimized.
Description
Technical Field
The utility model relates to a photovoltaic field of making especially relates to a heterojunction solar cell and photovoltaic module.
Background
The heterojunction solar cell is a relatively high-efficiency crystalline silicon solar cell at present, combines the characteristics of a crystalline silicon cell and a silicon-based thin film cell, and has the advantages of short manufacturing process, low process temperature, high conversion efficiency, more generated energy and the like. Fig. 1 is a schematic structural diagram of a heterojunction solar cell in the prior art, which sequentially includes, from top to bottom, a first collector electrode 51 ', a first transparent conductive film 41 ', a first doped amorphous layer 31 ', a first intrinsic amorphous layer 21 ', a single crystal silicon substrate 10 ', a second intrinsic amorphous layer 22 ', a second doped amorphous layer 32 ', a second transparent conductive film 42 ', and a second collector electrode 52 '.
The amorphous layers of the prior art heterojunction solar cells on both sides of the monocrystalline silicon substrate 10 'are typically of symmetrical design, in particular, the first intrinsic amorphous layer 21' and the second intrinsic amorphous layer 22 'have the same thickness, i.e. d1 ═ d 2'; the first doped amorphous layer 31 'and the second doped amorphous layer 32' have the same thickness. In the specific structure, when the thickness of the amorphous layer is too large, the short-wave absorption of the amorphous layer on the front surface of the heterojunction solar cell is serious, and the short-circuit current of the cell is reduced; when the thickness of the amorphous layer is too small, the passivation effect of the back surface of the heterojunction solar cell is poor, and the open-circuit voltage of the cell is reduced. In addition, the first doped amorphous layer 31 'in the prior art is usually doped amorphous silicon, and although the doped amorphous silicon has good contact with the first intrinsic amorphous layer 21', the short-circuit current of the heterojunction solar cell is reduced due to poor transmittance, which severely limits the efficiency of the heterojunction solar cell. The prior art has attempted to increase the transmittance by adjusting the hydrogen content of the first doped amorphous layer 31' to adjust the optical bandgap, which is not obvious.
In view of the above, there is a need to provide an improved solution to the above problems.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that prior art exists at least, for realizing the utility model purpose of the aforesaid, the utility model provides a heterojunction solar cell, its concrete design as follows.
A heterojunction solar cell is characterized by comprising a monocrystalline silicon substrate, a first intrinsic amorphous layer arranged on the front surface of the monocrystalline silicon substrate and a second intrinsic amorphous layer arranged on the back surface of the monocrystalline silicon substrate, wherein the thickness of the first intrinsic amorphous layer is smaller than that of the second intrinsic amorphous layer.
Further, the thickness of the first intrinsic amorphous layer is 4-6nm, and the thickness of the second intrinsic amorphous layer is 5-10 nm.
Further, the thickness of the second intrinsic amorphous layer is 6-8 nm.
Further, the heterojunction solar cell further comprises a doped microcrystalline silicon oxide layer or a doped microcrystalline silicon carbide layer arranged on the surface of the first intrinsic amorphous layer.
Further, the heterojunction solar cell further comprises a doped microcrystalline silicon layer which is arranged on the surface of the second intrinsic amorphous layer and has a doping type opposite to that of the doped microcrystalline silicon oxide layer or the doped microcrystalline silicon carbide layer.
Further, the thickness of the microcrystalline silicon oxide layer or the microcrystalline silicon carbide layer is less than the thickness of the doped microcrystalline silicon layer.
Further, the thickness of the microcrystalline silicon oxide layer or the microcrystalline silicon carbide layer is 4-8nm, and the thickness of the doped microcrystalline silicon layer is 5-15 nm.
Further, the heterojunction solar cell further comprises a first transparent conductive film layer arranged on the surface of the microcrystalline silicon oxide layer or the microcrystalline silicon carbide layer and a second transparent conductive film layer arranged on the surface of the doped microcrystalline silicon layer, wherein the thickness of the first transparent conductive film layer is not more than that of the second transparent conductive film layer.
Furthermore, the heterojunction solar cell also comprises a first collector electrode arranged on the surface of the first transparent conductive film and a second collector electrode arranged on the surface of the second transparent conductive film, and the area of the first collector electrode is smaller than that of the second collector electrode.
The utility model also provides a photovoltaic module, this photovoltaic module has above heterojunction solar cell.
The utility model has the advantages that: in the heterojunction solar cell structure provided by the utility model, because the thickness of the first intrinsic amorphous layer is smaller than that of the second intrinsic amorphous layer, the thickness of the first intrinsic amorphous layer is relatively small, so that the short wave absorption of the front surface of the heterojunction solar cell can be effectively reduced, and the short circuit current of the heterojunction solar cell is improved; the second intrinsic amorphous layer is relatively thick, so that the passivation effect of the back of the heterojunction solar cell can be improved, the open-circuit voltage of the heterojunction solar cell is improved, and the photoelectric conversion efficiency of the heterojunction solar cell can be comprehensively optimized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts. The front and back sides referred to herein are only defined with respect to the positional relationship in the drawings of the embodiments, that is, the front side corresponds to the upper surface of the drawings, and the back side corresponds to the lower surface of the drawings.
FIG. 1 is a schematic diagram of a prior art heterojunction solar cell;
fig. 2 is a schematic diagram of an embodiment of a heterojunction solar cell according to the present invention.
In the figure, 10 is a single crystal silicon substrate, 21 is a first intrinsic amorphous layer, 31 is a doped microcrystalline silicon oxide layer or a doped microcrystalline silicon carbide layer, 41 is a first transparent conductive film layer, 51 is a first collector electrode, 22 is a second intrinsic amorphous layer, 32 is a doped microcrystalline silicon layer, 42 is a second transparent conductive film layer, and 52 is a second collector electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 2, the heterojunction solar cell according to the present invention includes a single crystal silicon substrate 10, a first intrinsic amorphous layer 21 disposed on a front surface of the single crystal silicon substrate 10, and a second intrinsic amorphous layer 22 disposed on a back surface of the single crystal silicon substrate 10.
In the implementation process, the front surface of the monocrystalline silicon substrate 10 corresponds to the light receiving surface of the heterojunction solar cell, and the back surface corresponds to the backlight surface of the heterojunction solar cell.
In the present invention, the thickness of the first intrinsic amorphous layer 21 is smaller than that of the second intrinsic amorphous layer 22.
For the heterojunction solar cell, the influence of the light absorption effect of the light receiving surface on the photoelectric conversion efficiency of the cell is far larger than the influence of the light absorption effect of the backlight surface on the photoelectric conversion efficiency of the cell, and because the thickness of the first intrinsic amorphous layer 21 is relatively small, the loss of sunlight on the light receiving surface when the sunlight passes through the first intrinsic amorphous layer 21 can be effectively reduced, short-wave absorption on the front surface of the heterojunction solar cell can be reduced, and the short-circuit current of the heterojunction solar cell can be improved. Since the second intrinsic amorphous layer 22 is relatively thick, the passivation effect of the back side of the heterojunction solar cell can be improved.
The utility model discloses a thickness of first intrinsic amorphous layer 21 is less than the thickness design of second intrinsic amorphous layer 22, can synthesize the photoelectric conversion efficiency of optimizing heterojunction solar cell.
In the practical implementation process of the present invention, referring to fig. 2, the heterojunction solar cell further comprises a doped microcrystalline silicon oxide layer or a doped microcrystalline silicon carbide layer 31, a first transparent conductive film layer 41 and a first collector 51 sequentially stacked on the surface of the first intrinsic amorphous layer 21, and a doped microcrystalline silicon layer 32, a second transparent conductive film layer 42 and a second collector 52 sequentially stacked on the surface of the second intrinsic amorphous layer 22.
The doping types of the first doped amorphous silicon layer 31 and the second doped amorphous silicon layer 32 are opposite, wherein one of the first doped amorphous silicon layer and the second doped amorphous silicon layer is doped in an n-type manner, namely doped with phosphorus; the other is p-type doping, i.e. boron doping is used.
The thicker second intrinsic amorphous layer 22 not only has better passivation effect, but also can reduce adverse effects on passivation of the interface between the monocrystalline silicon substrate 10 and the second intrinsic amorphous layer 22 caused by defects introduced by doping elements in the doped microcrystalline silicon layer 32 as much as possible, so that the open-circuit voltage of the heterojunction solar cell can be improved.
In a specific embodiment, the first intrinsic amorphous layer 21 has a thickness of 4 to 6nm, and the second intrinsic amorphous layer 22 has a thickness of 4 to 10 nm. It is further preferable that the thickness of the second intrinsic amorphous layer 22 is 6 to 8 nm.
The first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 according to the present invention are both amorphous silicon films.
The utility model discloses in, doping micrite silicon oxide layer or doping micrite carborundum layer 31 have more excellent light transmissivity than the amorphous silicon film that prior art related, so can further improve heterojunction solar cell's short-circuit current relative prior art. In addition, the conductivity of the doped microcrystalline silicon oxide layer or the doped microcrystalline silicon carbide layer 31 is improved to a certain extent compared with that of an amorphous silicon film, an amorphous silicon oxide film and an amorphous silicon carbide film in the prior art, so that the series resistance of the heterojunction solar cell can be reduced, and the filling factor is improved.
In addition, the doped microcrystalline silicon layer 32 according to the present invention has higher conductivity than the doped amorphous silicon, microcrystalline silicon oxide, or microcrystalline silicon carbide according to the prior art, and the series resistance of the heterojunction solar cell can be reduced by the doped microcrystalline silicon layer 32, thereby improving the fill factor.
It is further preferable that the thickness of the doped microcrystalline silicon oxide layer or the doped microcrystalline silicon carbide layer 31 is smaller than the thickness of the doped microcrystalline silicon layer 32. In the specific implementation process, the thickness of the doped microcrystalline silicon oxide layer or the doped microcrystalline silicon carbide layer 31 is 4-8nm, and the thickness of the doped microcrystalline silicon layer 32 is 5-15 nm. For the heterojunction solar cell, the thickness of the doped microcrystalline silicon oxide layer or the doped microcrystalline silicon carbide layer 31 is relatively small, so that the loss of sunlight on a light receiving surface when the sunlight passes through the doped microcrystalline silicon oxide layer or the doped microcrystalline silicon carbide layer 31 can be effectively reduced, and the heterojunction solar cell has better photoelectric conversion efficiency.
In some embodiments of the present invention, the single crystal silicon substrate is n-type single crystal silicon, the doped microcrystalline silicon oxide layer or doped microcrystalline silicon carbide layer 31 is an n-type doped film, and the doped microcrystalline silicon layer 32 is a p-type doped film. That is, the doped microcrystalline silicon oxide layer or the doped microcrystalline silicon carbide layer 31 is doped with phosphorus, and the doped microcrystalline silicon layer 32 is doped with boron.
Further, in the present invention, the thickness of the first transparent conductive film layer 41 is less than or equal to the thickness of the second transparent conductive film layer 42. For the heterojunction solar cell, because the thickness of the first transparent conductive film layer 41 is relatively small, the loss of sunlight on the light receiving surface when the sunlight passes through the first transparent conductive film layer 41 can be effectively reduced, and the heterojunction solar cell can have better photoelectric conversion efficiency. In the specific implementation process, the total thickness of the first transparent conductive film 41 is optimally controlled to be 60-120nm, and 60-90nm is optimal.
Preferably, in the heterojunction solar cell according to the present invention, the area of the first collector electrode 51 is smaller than the area of the second collector electrode 52. The area of the first collector 51 is relatively small, so that the effective illumination area of the front surface of the heterojunction solar cell can be increased, and the short-circuit current is increased; the relatively large area of the second collector 52 can reduce the series resistance of the heterojunction solar cell and increase the fill factor. In a specific implementation, the sub-gate (not shown) constituting the first collector electrode 51 has a smaller set density than the sub-gate constituting the second collector electrode 52.
Based on the utility model discloses above design, the heterojunction solar cell that related prior art provided all has the optimization promotion of certain range in the aspect of benefit (EFF), open circuit voltage Voc, short circuit current Isc and fill factor FF.
The utility model also provides a photovoltaic module, it has above related heterojunction solar cell.
The utility model discloses below still demonstrates a concrete heterojunction solar cell's preparation mode.
S1, silicon wafer processing: an n-type monocrystalline silicon wafer is selected, an HF solution with the dilution solubility of 5% is used for removing a surface oxide layer, a KOH or NaOH or tetramethyl ammonium hydroxide (TMAH) alcohol adding method is adopted, and a shallow pyramid structure is formed on the surface by utilizing the anisotropic corrosion of monocrystalline silicon, so that the monocrystalline silicon substrate 10 is formed.
S2, manufacturing the intrinsic layer, namely the doped layer thin film: a first intrinsic amorphous layer 21 and a doped microcrystalline silicon oxide layer or a doped microcrystalline silicon carbide layer 31 are sequentially formed on the front surface of the n-type single crystal silicon substrate 10 by a PECVD process, and a second intrinsic amorphous layer 22 and a doped microcrystalline silicon layer 32 are sequentially formed on the back surface of the n-type single crystal silicon substrate 10.
S3, preparing a transparent conductive film: and respectively manufacturing a first transparent conductive film 41 and a second transparent conductive film 42 on two surfaces of the monocrystalline silicon substrate 10 on which the amorphous silicon thin film is manufactured by adopting PVD (physical vapor deposition), RPD (reverse plasma deposition) or magnetron sputtering deposition processes.
S4, manufacturing a collector: a layer of low-temperature conductive silver paste is printed on the first transparent conductive film 41 and the second transparent conductive film 42 respectively by a screen printing method, and then sintering is performed at a low temperature of 150-300 ℃ to form good ohmic contact, thereby forming a first collector 51 and a second collector 52.
It is understood that the first intrinsic amorphous layer 21, the doped microcrystalline silicon oxide layer or doped microcrystalline silicon carbide layer 31, the second intrinsic amorphous layer 22 and the doped microcrystalline silicon layer 32 are formed in different coating chambers, respectively. In addition, in the four-layer amorphous layer plating process, before the corresponding amorphous layer is plated, the temperature and the pressure of the related plating chamber need to reach preset values, the temperature is usually 180 ℃, and the pressure is controlled to be 30-200 pa.
To optimize the first and second intrinsic amorphous layers 21 and 22 to a single crystal silicon substrate10, and introducing SiH in the specific manufacturing process of the first and second intrinsic amorphous layers 21, 224And H2While, H can be adjusted2/SiH4So that the first and second intrinsic amorphous layers 21 and 22 have multiple intrinsic films with different characteristics, usually H2/SiH4The dilution ratio of (A) is in the range of 0 to 250.
In the case of producing the microcrystalline silicon oxide-doped layer or the microcrystalline silicon carbide-doped layer 31, if the film is a microcrystalline silicon oxide film, SiH is added4、H2、CO2And a first type of dopant gas is introduced into the vacuum chamber; if the film layer is a microcrystalline silicon carbide film, SiH is added4、H2、CH4And a first type of dopant gas is introduced into the vacuum chamber. In the specific implementation process, in order to realize the forming of the microcrystalline silicon oxide film or the microcrystalline silicon carbide film, the introduced H2And SiH4Has a large ratio of flow rates, which is generally larger than H in the case of amorphous silicon oxide or amorphous silicon carbide2And SiH4The flow rate ratio of (1).
In the fabrication of the doped microcrystalline silicon layer 32, SiH is added4、H2And a second type dopant gas is introduced into the vacuum chamber. Similarly, in the practice, H is introduced so that the doped microcrystalline silicon layer 32 is formed of a microcrystalline silicon film2And SiH4Also has a larger ratio of flow rates than H in the case of amorphous silicon2And SiH4The flow rate ratio of (1).
It should be understood that in the present invention, the first type dopant gas is referred to as PH3(phosphine) gas with B2H6One of the (diborane) gases, the second type dopant gas being PH3(Hydrogen phosphide) gas and B2H6The other of (diborane) gases.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above list of details is only for the practical implementation of the present invention, and they are not intended to limit the scope of the present invention, and all equivalent implementations or modifications that do not depart from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (10)
1. A heterojunction solar cell is characterized by comprising a monocrystalline silicon substrate, a first intrinsic amorphous layer arranged on the front surface of the monocrystalline silicon substrate and a second intrinsic amorphous layer arranged on the back surface of the monocrystalline silicon substrate, wherein the thickness of the first intrinsic amorphous layer is smaller than that of the second intrinsic amorphous layer.
2. The heterojunction solar cell of claim 1, wherein the thickness of the first intrinsic amorphous layer is 4-6nm and the thickness of the second intrinsic amorphous layer is 5-10 nm.
3. The heterojunction solar cell of claim 2, wherein the thickness of the second intrinsic amorphous layer is 6-8 nm.
4. The heterojunction solar cell of any of claims 1 to 3, further comprising a doped microcrystalline silicon oxide layer or a doped microcrystalline silicon carbide layer disposed on the surface of the first intrinsic amorphous layer.
5. The heterojunction solar cell of claim 4, further comprising a doped microcrystalline silicon layer disposed on the surface of the second intrinsic amorphous layer and having a doping type opposite to the doping type of the doped microcrystalline silicon oxide layer or the doped microcrystalline silicon carbide layer.
6. The heterojunction solar cell of claim 5, wherein the thickness of the microcrystalline silicon oxide layer or the microcrystalline silicon carbide layer is less than the thickness of the doped microcrystalline silicon layer.
7. The heterojunction solar cell of claim 6, wherein the thickness of the microcrystalline silicon oxide layer or the microcrystalline silicon carbide layer is 4-8nm and the thickness of the doped microcrystalline silicon layer is 5-15 nm.
8. The heterojunction solar cell of claim 5, further comprising a first transparent conductive film layer disposed on the surface of the microcrystalline silicon oxide layer or the microcrystalline silicon carbide layer and a second transparent conductive film layer disposed on the surface of the doped microcrystalline silicon layer, wherein the thickness of the first transparent conductive film layer is not greater than the thickness of the second transparent conductive film layer.
9. The heterojunction solar cell of claim 8, further comprising a first current collector disposed on a surface of the first transparent conductive film layer and a second current collector disposed on a surface of the second transparent conductive film layer, wherein an area of the first current collector is smaller than an area of the second current collector.
10. A photovoltaic module having a heterojunction solar cell according to any of claims 1 to 9.
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| CN202021771521.4U CN212783484U (en) | 2020-08-21 | 2020-08-21 | Heterojunction solar cell and photovoltaic module |
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Address after: 314000 buildings 1 and 2, No. 325, Kanghe Road, Gaozhao street, Xiuzhou District, Jiaxing City, Zhejiang Province Patentee after: Jiaxing atlas Technology Research Institute Co.,Ltd. Address before: Room 1505-8, building 1, Jiaxing photovoltaic technology innovation park, 1288 Kanghe Road, Gaozhao street, Xiuzhou District, Jiaxing City, Zhejiang Province, 314000 Patentee before: Jiaxing atlas Photovoltaic Technology Co., Ltd |