CN212434615U - TSV keysets that possesses miniflow way heat dissipation function - Google Patents
TSV keysets that possesses miniflow way heat dissipation function Download PDFInfo
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- CN212434615U CN212434615U CN202021840128.6U CN202021840128U CN212434615U CN 212434615 U CN212434615 U CN 212434615U CN 202021840128 U CN202021840128 U CN 202021840128U CN 212434615 U CN212434615 U CN 212434615U
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Abstract
The utility model discloses a TSV adapter plate with a micro-channel heat dissipation function, which belongs to the technical field of integrated circuit packaging and comprises an adapter plate body, wherein a micro-channel plate body groove is concavely arranged in the adapter plate body; a micro-channel plate body formed by bonding a micro-channel inlet and a micro-channel outlet and a micro-channel is arranged in the groove of the micro-channel plate body, and the micro-channel plate body is connected with the switching plate body through a switching plate bonding body; an upper rewiring layer and a lower rewiring layer are respectively manufactured on the upper surface and the lower surface of the adapter plate body. The utility model discloses bury the miniflow passage plate body in the switching plate body, form the inside TSV keysets that buries the miniflow passage plate body, compensate TSV switching plate body and receive the not enough of traditional heat-sinking capability restriction, give switching plate body's initiative heat-sinking capability, effectively promote the heat dissipation level of switching plate body, the utility model discloses can effectively increase TSV keysets heat-sinking capability, realize high power density's 2.5D 3D system level encapsulation, safe and reliable.
Description
Technical Field
The utility model relates to an integrated circuit packaging technology field, in particular to TSV keysets that possesses miniflow way heat dissipation function.
Background
With the development of electronic products in the directions of miniaturization, high performance, high reliability and the like, the system integration level is also increasingly improved. Under the circumstances, the way of improving the performance by further reducing the feature size of the integrated circuit and the line width of the interconnection line is limited by the physical characteristics of the material and the equipment process, the conventional moore's law has been difficult to develop, and thus, 2.5D/3D integration technology based on the TSV is proposed.
The ITRS (International Technology Roadmap for Semiconductors) report indicates that when the gate width of a silicon transistor reaches 10nm, the energy density of a single high-performance chip will exceed 100W/cm2(ii) a If 2.5D/3D high-density integration based on TSV is performed on a high-performance chip, high-power points are distributed in a three-dimensional space, and the energy density is the sum of the energy densities of stacked chips, which is far higher than the heat dissipation capability of the existing heat dissipation mode, and how to perform effective heat dissipation becomes a significant challenge in research and development and application of a 2.5D/3D integration technology. Therefore, in order to meet the development requirements of high performance and high heat dissipation of a 2.5D/3D microelectronic system, it is urgently needed to develop an embedded TSV adapter plate structure with a micro-channel heat dissipation function.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a TSV keysets that possesses miniflow way heat dissipation function to solve the relatively poor problem of current TSV keysets structure heat dissipation function.
In order to solve the technical problem, the utility model provides a TSV keysets that possesses miniflow channel heat dissipation function, include:
the micro-channel plate body groove is concavely arranged in the adapter plate body;
the micro-channel plate body is arranged in the groove of the micro-channel plate body;
an upper rewiring layer and a lower rewiring layer are respectively manufactured on the upper surface and the lower surface of the adapter plate body.
Optionally, the micro flow channel plate body includes a micro flow channel inlet and outlet and a micro flow channel, and the micro flow channel inlet and outlet and the micro flow channel are bonded through a bonding layer.
Optionally, the depth of the micro flow channel plate body groove does not exceed the thickness of the adapter plate body; the depth of the inlet and the outlet of the micro-channel does not exceed the depth of the plate body groove of the micro-channel; the thickness of the micro-channel is not more than the depth of the micro-channel plate body groove.
Optionally, the material of the bonding layer includes gold, copper, tin-lead, tin-silver-copper, and organic resin.
Optionally, the micro-channel plate body is fixed in the micro-channel plate body groove through an adapter plate bonding body.
Optionally, a through hole is formed in the adapter plate body, a connector is filled in the through hole, and the upper rewiring layer and the lower rewiring layer are electrically connected through the connector.
Optionally, the materials of the adapter plate body include silicon and glass.
Optionally, a plurality of array bumps are arranged on the lower rewiring layer, and the array bumps are electrically connected with the lower rewiring layer.
Optionally, the structure of the micro flow channel includes a straight line type, an S-type and a zigzag line type.
The utility model provides a TSV adapter plate with a micro-channel heat dissipation function, which comprises an adapter plate body, wherein a micro-channel plate body groove is concavely arranged in the adapter plate body; a micro-channel plate body formed by bonding a micro-channel inlet and a micro-channel outlet and a micro-channel is arranged in the groove of the micro-channel plate body, and the micro-channel plate body is connected with the switching plate body through a switching plate bonding body; an upper rewiring layer and a lower rewiring layer are respectively manufactured on the upper surface and the lower surface of the adapter plate body.
The utility model discloses bury the miniflow passage plate body in the switching plate body, form the inside TSV keysets that buries the miniflow passage plate body, compensate TSV switching plate body and receive the not enough of traditional heat-sinking capability restriction, give switching plate body's initiative heat-sinking capability, effectively promote the heat dissipation level of switching plate body, the utility model discloses can effectively increase TSV keysets heat-sinking capability, realize high power density's 2.5D 3D system level encapsulation, safe and reliable.
Drawings
Fig. 1 is a schematic structural diagram of a TSV interposer with a microchannel heat dissipation function according to the present invention;
FIG. 2 is a schematic view of the structure of the microchannel plate;
fig. 3 is a schematic diagram of an adapter plate body prepared from a substrate;
FIG. 4 is a schematic view of a microfluidic port prepared through a substrate;
FIG. 5 is a schematic view of a micro flow channel prepared by a substrate;
fig. 6 is a schematic view of the micro flow channel plate being placed in the adapter plate body;
fig. 7 is a schematic diagram of upper and lower redistribution layers prepared on the upper and lower surfaces of the interposer body.
Detailed Description
The TSV interposer with micro channel heat dissipation function according to the present invention will be described in detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more fully apparent from the following description and appended claims. It should be noted that the drawings are in simplified form and are not to precise scale, and are provided for convenience and clarity in order to facilitate the description of the embodiments of the present invention.
Example one
The utility model provides a TSV keysets that possesses miniflow channel heat dissipation function, as shown in fig. 1, including switching plate body 1, switching plate body 1's material is silicon or glass. The switching plate body 1 is provided with a micro-channel plate body groove (not shown in fig. 1) in a concave manner, and the depth of the micro-channel plate body groove is not more than the thickness of the switching plate body 1. The micro-channel plate body 4 is fixedly arranged in the micro-channel plate body groove through the adapter plate bonding body 8, the TSV adapter plate with the micro-channel plate body embedded inside is formed, the adapter plate is endowed with active heat dissipation capacity, the heat dissipation level of the adapter plate is effectively improved, and the requirements of high-performance and high-heat-dissipation packaging of a 2.5D/3D microelectronic system can be met.
As shown in fig. 2, which is a schematic structural diagram of a micro flow channel plate 4, the micro flow channel plate 4 includes a micro flow channel inlet/outlet 5 and a micro flow channel 6, and the micro flow channel inlet/outlet 5 and the micro flow channel 6 are bonded by a bonding layer 7. The structure of the micro flow channel 6 may be a linear type, an S-type, a zigzag type, or other shapes. The material of the bonding layer 7 comprises gold, copper, tin-lead, tin-silver and tin-silver-copper. The depth of the micro-channel inlet and outlet 5 is not more than that of the micro-channel plate body groove 3; the thickness of the micro-channel 6 is not more than the depth of the micro-channel plate body groove 3.
With reference to fig. 1, an upper redistribution layer 9 and a lower redistribution layer 11 are respectively formed on the upper surface and the lower surface of the interposer 1. The through hole 2 is formed in the adapter plate body 1, the connecting body 10 is filled in the through hole 2, and the upper rewiring layer 9 and the lower rewiring layer 11 are electrically connected through the connecting body 10. A through hole 2 is formed in the adapter plate body 1, a connecting body 10 is filled in the through hole 2, and the upper rewiring layer 9 and the lower rewiring layer 11 are electrically connected through the connecting body 10. The lower rewiring layer 11 is provided with a plurality of array bumps 12, and the array bumps 12 are electrically connected with the lower rewiring layer 11.
The utility model provides a TSV keysets that possesses miniflow passage heat dissipation function makes through following step:
as shown in fig. 3, providing a substrate 13, wherein the material of the substrate 13 is silicon, glass or other materials; manufacturing a plurality of adapter plate bodies 1 which are distributed in an array and have the required pitch and depth-to-width ratio on the substrate 13 by adopting a conventional TSV process;
a through hole 2 is formed in each adapter plate body 1, and the through hole 2 penetrates through the substrate 13. A required micro-channel plate body groove 3 is manufactured on each adapter plate 1 by utilizing a conventional etching process, as shown in fig. 3; the size of the micro-channel plate body groove 3 is determined according to the requirement, and the depth of the micro-channel plate body groove does not exceed the thickness of the adapter plate body 1;
as shown in fig. 4, a substrate 13 is newly provided, and the material of the substrate 13 is silicon, glass or other materials; the micro flow channel inlet/outlet 5 having a desired size is formed on the substrate 13 by a conventional etching process. In fig. 4, a plurality of micro flow channel inlets and outlets 5 distributed in an array are obtained on the substrate 13, and the independent micro flow channel inlets and outlets 5 are obtained by cutting through a conventional scribing process, wherein the depth of the micro flow channel inlets and outlets 5 is not more than the depth of the micro flow channel plate body groove 3;
as shown in fig. 5, a substrate 13 is newly provided, and the material of the substrate 13 is silicon, glass or other materials; the micro flow channel 6 with the required structure and the depth-to-width ratio is manufactured on the substrate 13 by adopting a conventional etching process. In fig. 5, a plurality of micro flow channels 6 distributed in an array are obtained on the substrate 13, and the independent micro flow channels 6 are obtained by cutting through a conventional scribing process, wherein the thickness of the micro flow channels 6 is not more than the depth of the micro flow channel plate body grooves 3, and the structures of the micro flow channels 6 are linear, S-shaped, broken line-shaped and the like;
referring to fig. 2, a bonding layer 7 is formed on the surfaces of the inlet/outlet 5 and the micro flow channel 6 by electroplating, printing and bonding, and the inlet/outlet 5 and the micro flow channel 6 are bonded by the bonding layer 7 by a bonding process such as thermocompression bonding and reflow bonding to form an independent micro flow channel plate 4. In fig. 2, the size of the microchannel plate 4 does not exceed the size of the microchannel plate grooves 3; the thickness of the bonding layer 7 is determined according to the material of the bonding layer, the bonding process and the product requirements, and the material of the bonding layer 7 may be gold, copper, tin-lead, tin-silver-copper, organic resin and the like.
As shown in fig. 6, the microchannel plate 4 shown in fig. 2 is embedded in the microchannel plate 3, and the microchannel plate 4 is fixedly bonded to the adapter plate 1 by the adapter plate bonding member 8. The adapter plate bonding body 8 is made of common bonding materials such as bonding glue and alloy sheets. In fig. 6, a connecting body 10 may be filled in a through hole 2 of an adapter plate body 1 through a filling process, and the connecting body 10 fills the through hole 2, specifically, the connecting body 10 may be filled by a process commonly used in the art, and a detailed process is not repeated here;
as shown in fig. 7, an upper rewiring layer 9 and a lower rewiring layer 11 are respectively manufactured on the upper surface and the lower surface of the interposer body 1 by a process of photolithography but not limited to photolithography; the upper rewiring layer 9 and the lower rewiring layer 11 are electrically connected by a connector 10; the upper rewiring layer 9 covers the micro-channel plate body 4;
as shown in fig. 1, a laser drilling process, but not limited to laser drilling, is adopted to form a through hole at the position of the micro channel inlet/outlet 5, and a standard ball-planting process is adopted to manufacture an array bump 12 on the lower redistribution layer 11 to achieve signal extraction of the adapter plate body 1, wherein the size of the array bump 12 is determined according to the diameter and pitch of a pad on the surface of the adapter plate body 1. The material of the array bump 12 may be tin-lead, tin-silver-copper, and the like.
The utility model discloses a miniflow channel plate body 4 with high-efficient initiative heat dissipation function buries in switching plate body 1, has effectively increased switching plate body 1's heat-sinking capability to satisfy 2.5D 3D microelectronic system high performance, high heat dissipation encapsulation demand.
The above description is only for the preferred embodiment of the present invention and is not intended to limit the scope of the present invention, and any modification and modification made by those skilled in the art according to the above disclosure are all within the scope of the claims.
Claims (9)
1. The utility model provides a TSV keysets that possesses microchannel heat dissipation function which characterized in that includes:
the device comprises a switching plate body (1), wherein a micro-channel plate body groove (3) is concavely arranged in the switching plate body (1);
a micro flow channel plate body (4) arranged in the micro flow channel plate body groove (3);
an upper rewiring layer (9) and a lower rewiring layer (11) are respectively manufactured on the upper surface and the lower surface of the adapter plate body (1).
2. The TSV adapter plate having the micro channel heat dissipation function according to claim 1, wherein the micro channel plate body (4) comprises a micro channel inlet/outlet (5) and a micro channel (6), and the micro channel inlet/outlet (5) and the micro channel (6) are bonded by a bonding layer (7).
3. The TSV adapter plate with microchannel heat dissipation function of claim 2, wherein the depth of the microchannel plate body groove (3) does not exceed the thickness of the adapter plate body (1); the depth of the micro-channel inlet and outlet (5) is not more than that of the micro-channel plate body groove (3); the thickness of the micro-channel (6) is not more than the depth of the micro-channel plate body groove (3).
4. The TSV adapter plate with micro channel heat dissipation function of claim 2, wherein the material of the bonding layer (7) comprises gold, copper, tin-lead, tin-silver-copper and organic resin.
5. The TSV adapter plate having micro-channel heat dissipation function of claim 1, wherein the micro-channel plate body (4) is fixed in the micro-channel plate body groove (3) by an adapter plate adhesive (8).
6. The TSV adapter plate with micro-channel heat dissipation function of claim 1, wherein a through hole (2) is formed in the adapter plate body (1), a connector (10) is filled in the through hole (2), and the upper redistribution layer (9) and the lower redistribution layer (11) are electrically connected through the connector (10).
7. The TSV adapter plate with microchannel heat dissipation function of claim 1, wherein the material of the adapter plate body (1) comprises silicon and glass.
8. The TSV adapter plate with micro-channel heat dissipation function of claim 1, wherein a plurality of array bumps (12) are formed on the lower redistribution layer (11), and the array bumps (12) are electrically connected to the lower redistribution layer (11).
9. The TSV adapter plate having a microchannel heat dissipation function according to claim 1, wherein the structure of the microchannel (6) includes a straight line type, an S-type and a zigzag type.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021840128.6U CN212434615U (en) | 2020-08-28 | 2020-08-28 | TSV keysets that possesses miniflow way heat dissipation function |
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| CN202021840128.6U CN212434615U (en) | 2020-08-28 | 2020-08-28 | TSV keysets that possesses miniflow way heat dissipation function |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863768A (en) * | 2020-08-28 | 2020-10-30 | 中国电子科技集团公司第五十八研究所 | TSV adapter plate with micro-channel heat dissipation function and preparation method thereof |
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2020
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863768A (en) * | 2020-08-28 | 2020-10-30 | 中国电子科技集团公司第五十八研究所 | TSV adapter plate with micro-channel heat dissipation function and preparation method thereof |
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