CN212062403U - Plasma etching reactor - Google Patents
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- CN212062403U CN212062403U CN202021234360.5U CN202021234360U CN212062403U CN 212062403 U CN212062403 U CN 212062403U CN 202021234360 U CN202021234360 U CN 202021234360U CN 212062403 U CN212062403 U CN 212062403U
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Abstract
The utility model relates to a semiconductor integrated circuit makes technical field, discloses a plasma etching reactor. The invention provides an etching reactor with high etching symmetry, which comprises a radio frequency feed-in rod, a lower electrode base, an electrostatic chuck, a gas spraying disc, a cavity wall, a bridging ring, a radio frequency shielding ring and a radio frequency isolating ring which are coaxially arranged, wherein the radio frequency isolating ring comprises a lower isolating ring body and an upper isolating ring body which are integrally formed, so that the radial distribution of the earth parasitic capacitance is more uniform through the integrated design of the isolating ring on the basis of effectively isolating radio frequency signals, the sensitivity of the earth parasitic capacitance to the etching symmetry is reduced, and the uniform distribution of plasma in a cavity, particularly the high-symmetry distribution of high-frequency plasma, is realized. In addition, the uniformity of the circulation of radio frequency current in the whole annular surface can be optimized through the integrated design of the shielding ring, and the uniform distribution of plasma in the cavity is further realized.
Description
Technical Field
The utility model belongs to the technical field of semiconductor integrated circuit makes, specifically relate to a plasma etching reactor.
Background
An etching technique is a technique for selectively etching or peeling a surface of a semiconductor substrate or a surface-covering film in accordance with a mask pattern or design requirements in a semiconductor manufacturing process, and is applied not only to basic manufacturing processes of semiconductor devices and integrated circuits but also to processing of thin film circuits, printed circuits, and other fine patterns. In a typical plasma etch process, different process gas combinations (e.g., CxFy, O)2And Ar, etc.) in a Radio frequency (Radio frequency) environment to form a plasma under Radio frequency excitation, and then under the action of electric fields of upper and lower electrodes of an etching chamber (a typical etching chamber includes a capacitive coupling chamber and an inductive coupling chamber), the formed plasma and the surface of the wafer are subjected to physical bombardment and chemical reaction, thereby completing a process of designing a pattern on the surface of the wafer and performing a key process.
However, etch asymmetry is inevitably encountered during plasma etching of wafers, particularly during high frequency etching processes (such as those dominated by high frequency power sources such as 60MHz and 40 MHz). The asymmetry mainly comes from high selectivity of high frequency to etching cavity parasitic capacitance and cavity radio frequency main loop impedance unevenness, which is expressed as follows: the radio frequency current of the high-frequency source flows in the whole etching cavity body and has asymmetry, so that the density distribution of plasma is not uniform, and finally, the etching effect is asymmetric.
SUMMERY OF THE UTILITY MODEL
In order to solve the etching asymmetry problem that current plasma etching equipment exists, the utility model aims to provide a novel plasma etching reactor carries out symmetry optimization through parasitic electric capacity to the cavity/and radio frequency major loop, can realize intracavity plasma evenly distributed, especially high frequency plasma's high symmetry distribution.
The utility model discloses the technical scheme that the first aspect adopted does:
a plasma etching reactor comprises a radio frequency feed-in rod, a lower electrode base, an electrostatic chuck, a gas spraying disk, a cavity wall, a bridging ring, a radio frequency shielding ring and a radio frequency isolating ring which are coaxially arranged;
the radio frequency feed-in rod, the lower electrode base, the electrostatic chuck and the gas spraying disk are sequentially arranged along the axial direction, wherein the radio frequency feed-in rod, the lower electrode base and the electrostatic chuck are sequentially connected;
the cavity wall comprises a top plate and an annular side wall body, and a plasma etching cavity is defined by the top plate, the annular side wall body, the bridging ring, the top of the radio frequency shielding ring, the top of the radio frequency isolation ring and the electrostatic chuck;
the gas spraying disc is positioned at the top of the plasma etching cavity and connected with the top plate, the top plate is connected with the top of the annular side wall body, and the annular side wall body is connected with the radio frequency shielding ring through the bridging ring;
the radio frequency isolation ring comprises a lower isolation ring body and an upper isolation ring body which are integrally formed, wherein the inner diameter of the lower isolation ring body is smaller than that of the upper isolation ring body, the lower isolation ring body wraps the radio frequency feed-in rod in an empty space, and the upper isolation ring body wraps the lower electrode base and the electrostatic chuck;
the radio frequency shielding ring is electrically connected with the ground and wraps the radio frequency feed-in rod in an empty space mode, and wraps the radio frequency isolating ring.
Based on the above utility model discloses a provide a novel plasma sculpture reactor with high symmetry of sculpture, can be playing on the basis of effectively keeping apart the radio frequency signal, make through the integrated design of isolating ring parasitic capacitance more even at radial distribution to ground to reduce parasitic capacitance to ground to the sensitivity of sculpture symmetry, realize intracavity plasma evenly distributed, especially high frequency plasma's high symmetry distributes.
In one possible design, the radio frequency shielding ring comprises a lower shielding ring body, a middle shielding ring body and an upper shielding ring body which are integrally formed;
the lower shielding ring body and the middle shielding ring body wrap the radio frequency feed-in rod at intervals, and the upper shielding ring body wraps the radio frequency isolating ring.
Through the possible design, the uniformity of the circulation of the radio frequency current in the whole annular surface can be optimized through the integrated design of the shielding ring, and the uniform distribution of the plasma in the cavity is further realized.
In one possible design, the radial thicknesses of the lower shielding ring body, the middle shielding ring body and the upper shielding ring body are respectively between 5 and 20 mm.
In one possible design, the radial thickness of the upper isolation ring body is greater than or equal to 10 mm.
In one possible design, the radial thickness of the upper isolation ring body is 20 mm.
In one possible design, the radio frequency isolation ring is made of ceramic, quartz, Vespel-type plastic, ULTEM-type plastic, or Teflon-type plastic.
In one possible design, the system further comprises a radio frequency power supply and a matcher, wherein the radio frequency power supply, the matcher and the radio frequency feed-in rod are electrically connected in sequence.
In one possible design, the wafer edge adjusting ring is further included, wherein the wafer edge adjusting ring is disposed on a top surface of the rf isolation ring and is coaxial with the rf isolation ring.
In one possible design, a chamber wall protection ring is further included, wherein the chamber wall protection ring is located at an outer peripheral edge region of the plasma etching chamber and is coaxial with the annular sidewall body.
In one possible design, a plasma confinement ring is further included, wherein the plasma confinement ring is directly above and coaxial with the bridging ring.
The utility model has the advantages that:
(1) the invention provides a novel plasma etching reactor with high etching symmetry, which comprises a radio frequency feed-in rod, a lower electrode base, an electrostatic chuck, a gas spraying disc, a cavity wall, a bridging ring, a radio frequency shielding ring and a radio frequency isolating ring which are coaxially arranged, wherein the radio frequency isolating ring comprises a lower isolating ring body and an upper isolating ring body which are integrally formed, so that the radial distribution of the earth parasitic capacitance is more uniform through the integrated design of the isolating ring on the basis of effectively isolating radio frequency signals, the sensitivity of the earth parasitic capacitance to the etching symmetry is reduced, and the uniform distribution of plasmas in the cavity, particularly the high symmetry distribution of high-frequency plasmas is realized;
(2) and the uniformity of the circulation of radio frequency current in the whole annular surface can be optimized through the integrated design of the shielding ring, and the uniform distribution of plasma in the cavity can be further realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic cross-sectional view of a plasma etching reactor according to the present invention.
Fig. 2 is a schematic diagram of an equivalent rf loop of a plasma etching reactor according to the present invention during operation.
In the above drawings, 1-a radio frequency feed-in rod; 2-a lower electrode base; 3-electrostatic chuck; 4-gas shower plate; 5-chamber wall; 51-a top plate; 52-annular sidewall body; 6-bridged rings; 7-radio frequency shielding ring; 71-lower shielding ring body; 72-middle shielding ring body; 73-an upper shielding ring body; 8-radio frequency isolation ring; 81-lower isolation ring body; 82-an upper isolation ring; 9-radio frequency power supply; 10-matcher; 11-wafer edge adjustment ring; 12-a chamber wall protection ring; 13-a plasma confinement ring; 300-a wafer; 500-plasma etch chamber.
Detailed Description
The invention will be further described with reference to the accompanying drawings and specific embodiments. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. Specific structural and functional details disclosed herein are merely illustrative of example embodiments of the invention. The present invention may, however, be embodied in many alternate forms and should not be construed as limited to the embodiments set forth herein.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of example embodiments of the present invention.
It should be understood that, for the term "and/or" as may appear herein, it is merely an associative relationship that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, B exists alone, and A and B exist at the same time; for the term "/and" as may appear herein, which describes another associative object relationship, it means that two relationships may exist, e.g., a/and B, may mean: a exists independently, and A and B exist independently; in addition, for the character "/" that may appear herein, it generally means that the former and latter associated objects are in an "or" relationship.
It will be understood that when an element is referred to herein as being "connected," "connected," or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. Conversely, if a unit is referred to herein as being "directly connected" or "directly coupled" to another unit, it is intended that no intervening units are present. In addition, other words used to describe the relationship between elements should be interpreted in a similar manner (e.g., "between … …" versus "directly between … …", "adjacent" versus "directly adjacent", etc.).
It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises," "comprising," "includes" and/or "including," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, numbers, steps, operations, elements, components, and/or groups thereof.
It should also be noted that, in some alternative implementations, the functions/acts noted may occur out of the order noted in the figures. For example, two figures shown in succession may, in fact, be executed substantially concurrently, or the figures may sometimes be executed in the reverse order, depending upon the functionality/acts involved.
It should be understood that specific details are provided in the following description to facilitate a thorough understanding of example embodiments. However, it will be understood by those of ordinary skill in the art that the example embodiments may be practiced without these specific details. For example, systems may be shown in block diagrams in order not to obscure the examples in unnecessary detail. In other instances, well-known processes, structures and techniques may be shown without unnecessary detail in order to avoid obscuring example embodiments.
Example one
As shown in fig. 1-2, the plasma etching reactor provided in this embodiment includes a radio frequency feed-in rod 1, a lower electrode base 2, an electrostatic chuck 3, a gas shower plate 4, a chamber wall 5, a bridging ring 6, a radio frequency shielding ring 7, and a radio frequency isolation ring 8, which are coaxially disposed; the radio frequency feed-in rod 1, the lower electrode base 2, the electrostatic chuck 3 and the gas shower plate 4 are sequentially arranged along the axial direction, wherein the radio frequency feed-in rod 1, the lower electrode base 2 and the electrostatic chuck 3 are sequentially connected; the chamber wall 5 comprises a top plate 51 and an annular sidewall body 52, and a plasma etching chamber 500 is enclosed by the top plate 51, the annular sidewall body 52, the bridging ring 6, the top of the rf shielding ring 7, the top of the rf isolation ring 8 and the electrostatic chuck 3; the gas shower plate 4 is located at the top of the plasma etching chamber 500 and connected to the top plate 51, the top plate 51 is connected to the top of the annular sidewall body 52, and the annular sidewall body 52 is connected to the rf shielding ring 7 through the bridging ring 6; the radio frequency isolation ring 8 comprises a lower isolation ring body 81 and an upper isolation ring body 82 which are integrally formed, wherein the inner diameter of the lower isolation ring body 81 is smaller than the inner diameter of the upper isolation ring body 82, the lower isolation ring body 81 wraps the radio frequency feed-in rod 1 in an empty space, and the upper isolation ring body 82 wraps the lower electrode base 2 and the electrostatic chuck 3; the radio frequency shielding ring 7 is electrically connected and wraps the radio frequency feed-in rod 1 in an empty space manner, and wraps the radio frequency isolation ring 8.
As shown in fig. 1, in the specific structure of the plasma etching reactor, the rf feed rod 1 is used for feeding rf current to provide a Radio frequency (Radio frequency) environment; the lower electrode base 2 is used for bearing a lower electrode (not shown in the figure) in an electric field of the upper electrode and the lower electrode; the electrostatic chuck 3 is used for adsorbing a wafer 300 to be etched; the gas shower plate 4 is used to inject a combination of process gases (e.g., CxFy, O)2And Ar, etc.) so that the process gas undergoes rf excitation in an rf environment to form a plasma; the chamber wall 5 is used as a main enclosure of the plasma etching chamber 500 to provide a plasma etching site; the bridge ring 6 is used for electrically connecting the cavity wall 5 with the radio frequency shielding ring 7; the radio frequency shielding ring 7 is used for shielding internal radio frequency signals; the radio frequency isolation ring 8 is used for effectively isolating the lower electrode from the radio frequency shielding ring 7 and is made of a low dielectric constant material. In addition, the radio frequency feed-in rod 1, the lower electrode base 2, the electrostatic chuck 3, the gas shower plate 4, the chamber wall 5 and the bridge ring 6 can all be implemented by adopting the existing structure.
The equivalent rf loop of the plasma etch reactor during operation is shown in fig. 2, and includes two rf current paths: (1) radial current I1That is, the RF signal forms a current loop through the parasitic capacitance to ground, including the RF feed rod capacitance to ground C1And electrostatic chuck/bottom electrode pedestal capacitance to ground C2The radio frequency current can consume energy, and although the radio frequency current does not contribute to the plasma density, the radio frequency current can affect the uniformity of the radio frequency current in the axial distribution, so that the symmetry of the etching effect is affected; (2) axial current I2The main loop RF current, the circulating path is sequentially RF feed rod 1 → lower electrode base 2 → electrostatic chuck 3 → plasma etching chamber 500 → gas shower plate 4 → chamber wall 5 → bridge ring 6 → RF shield ring 7 → Ground (GND), the RF current directly contributes to the plasma, wherein the axial current I is2The plasma current formed is divided into two parts: edge plasma current I3And central plasma current I4And I is2＝I3+I4. Furthermore, L in FIG. 21/L2/L3Is a radio frequency feed-in rod inductor, C4Is an electrostatic chuck ceramic capacitor, C5Central zone plasma capacitance, C6Is the edge area plasma capacitance, R1Is a central region plasma resistance, R2Is the edge area plasma resistance.
Based on the above analysis, it is obvious that the distribution uniformity of the radio frequency current is crucial to the symmetry of the etching effect, and the detailed expression is as follows: the radial uniform distribution of the inductance in the radio frequency current loop and the radial uniform distribution of the capacitance in the radio frequency current loop. In the technical solution provided in this embodiment, the radio frequency isolation ring 8 includes a lower isolation ring 81 and an upper isolation ring 82 that are integrally formed, wherein an inner diameter of the lower isolation ring 81 is smaller than an inner diameter of the upper isolation ring 82, the lower isolation ring 81 wraps the radio frequency feed-in rod 1 at an interval, the upper isolation ring 82 wraps the lower electrode base 2 and the electrostatic chuck 3, and the ground parasitic capacitance (i.e., the ground capacitance C of the radio frequency feed-in rod) can be formed by integrally designing the isolation ring on the basis of effectively isolating the radio frequency signal1And electrostatic chuck/bottom electrode pedestal capacitance to ground C2) More uniform in radial distribution, thereby reducing sensitivity of parasitic capacitance to ground to etching symmetry, and realizing uniform distribution of plasma in cavity, especially high frequency plasmaA symmetrical distribution.
Preferably, the radio frequency shielding ring 7 includes a lower shielding ring body 71, a middle shielding ring body 72, and an upper shielding ring body 73, which are integrally formed, wherein the lower shielding ring body 71 and the middle shielding ring body 72 wrap the radio frequency feed-in rod 1 at intervals, and the upper shielding ring body 73 wraps the radio frequency isolation ring 8. As shown in fig. 1, by the integrated design of the shielding ring, the uniformity of the circulation of the rf current in the whole ring surface can be optimized, and further uniform distribution of the plasma in the cavity, especially high-symmetry distribution of the high-frequency plasma, can be achieved.
Preferably, the radial thicknesses of the lower shielding ring body 71, the middle shielding ring body 72 and the upper shielding ring body 73 are respectively between 5 mm and 20 mm. Through the radial thickness design, the ring section of the shielding ring body can be as small as possible on the basis of ensuring the radio frequency shielding effect, so that the uniformity of the circulation of radio frequency current in the whole ring surface is further optimized, and the uniform distribution of plasma in the cavity is realized.
Preferably, the radial thickness of the upper isolation ring 82 is greater than or equal to 10 mm. By the radial thickness design, the electrostatic chuck/lower electrode base capacitance to ground C can be reduced2Further reducing the radial current I1The sensitivity of the parasitic capacitance to the ground to the etching symmetry is further reduced, and the uniform distribution of plasma in the cavity is realized. By way of example, the radial thickness of the upper isolation ring 82 is 20 mm.
Specifically, the radio frequency isolation ring 8 can be made of, but not limited to, a low dielectric constant material such as ceramic, quartz, Vespel-type plastic, ULTEM-type plastic, or Teflon-type plastic. Through the selection and preparation of the materials, the reduction of the capacitance C of the electrostatic chuck/lower electrode base to the ground can be facilitated2Further reducing the radial current I1The sensitivity of the parasitic capacitance to the ground to the etching symmetry is further reduced, and the uniform distribution of plasma in the cavity is realized.
The optimized feed-in device further comprises a radio frequency power supply 9 and a matcher 10, wherein the radio frequency power supply 9, the matcher 10 and the radio frequency feed-in rod 1 are electrically connected in sequence. As shown in fig. 1, the rf power supply 9 is used as an rf current source required during operation, and can be implemented by using an existing power supply structure. The matching unit 10 is used for matching the output impedance of the rf power supply 9 with the input impedance of the rf feed rod 1, so as to reduce the rf return loss, and may also be implemented by using an existing matching circuit, for example, 50/75 ohms impedance matching. Therefore, the radio frequency current can be led normally and efficiently through the configuration of the structure.
Preferably, the wafer edge adjusting ring comprises a wafer edge adjusting ring 11, wherein the wafer edge adjusting ring 11 is arranged on the top surface of the radio frequency isolation ring 8 and is coaxial with the radio frequency isolation ring 8. As shown in fig. 1, the wafer edge adjusting ring 11 is used to adjust the edge plasma distribution of the wafer 300, so as to realize a highly precise etching process, which can be realized by using the existing adjusting structure.
Preferably, a chamber wall guard ring 12 is included, wherein the chamber wall guard ring 12 is positioned at an outer peripheral edge region of the plasma etch chamber 500 and is coaxial with the annular sidewall body 52. As shown in fig. 1, the chamber wall guard ring 12 is configured to prevent plasma from etching the annular sidewall body 52, thereby extending the useful life of the annular sidewall body 52. In addition, the chamber wall guard ring 12 is preferably made of a low dielectric constant material to reduce the edge area plasma capacitance C6Further reducing the edge plasma current I3The uniformity of the circulation of the radio frequency current in the cavity is optimized, and the uniform distribution of the plasma in the cavity, particularly the high-symmetry distribution of the high-frequency plasma, is further realized.
Preferably, the plasma confinement ring 13 is further included, wherein the plasma confinement ring 13 is located directly above the bridging ring 6 and is coaxial with the bridging ring 6. As shown in fig. 1, the plasma confinement rings 13 are used to prevent plasma from etching the bridge ring 6, so as to prolong the service life of the bridge ring 6. In addition, the plasma confinement rings 13 are also preferably made of a low dielectric constant material to reduce the edge area plasma capacitance C6Further reducing the edge plasma current I3Optimizing the beamThe uniformity of the frequency current flowing in the cavity further realizes the uniform distribution of plasma in the cavity, in particular to the high-symmetry distribution of high-frequency plasma.
In summary, the plasma etching reactor provided by the embodiment has the following technical effects:
(1) the embodiment provides a novel plasma etching reactor with high etching symmetry, which comprises a radio frequency feed-in rod, a lower electrode base, an electrostatic chuck, a gas spraying disc, a cavity wall, a bridging ring, a radio frequency shielding ring and a radio frequency isolating ring which are coaxially arranged, wherein the radio frequency isolating ring comprises a lower isolating ring body and an upper isolating ring body which are integrally formed, so that the radial distribution of the earth parasitic capacitance is more uniform through the integrated design of the isolating ring on the basis of effectively isolating radio frequency signals, the sensitivity of the earth parasitic capacitance to the etching symmetry is reduced, and the uniform distribution of plasma in a cavity, particularly the high symmetry distribution of high-frequency plasma is realized;
(2) and the uniformity of the circulation of radio frequency current in the whole annular surface can be optimized through the integrated design of the shielding ring, and the uniform distribution of plasma in the cavity can be further realized.
The above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: modifications of the technical solutions described in the embodiments or equivalent replacements of some technical features may still be made. Such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.
Finally, it should be noted that the present invention is not limited to the above-mentioned alternative embodiments, and that various other forms of products can be obtained by anyone in light of the present invention. The above detailed description should not be taken as limiting the scope of the invention, which is defined in the following claims, and which can be used to interpret the claims.
Claims (10)
1. A plasma etching reactor is characterized by comprising a radio frequency feed-in rod (1), a lower electrode base (2), an electrostatic chuck (3), a gas spraying disc (4), a cavity wall (5), a bridging ring (6), a radio frequency shielding ring (7) and a radio frequency isolating ring (8) which are coaxially arranged;
the radio frequency feed-in rod (1), the lower electrode base (2), the electrostatic chuck (3) and the gas spraying disc (4) are sequentially arranged along the axial direction, wherein the radio frequency feed-in rod (1), the lower electrode base (2) and the electrostatic chuck (3) are sequentially connected;
the cavity wall (5) comprises a top plate (51) and an annular side wall body (52), and a plasma etching cavity (500) is defined by the top plate (51), the annular side wall body (52), the bridging ring (6), the top of the radio frequency shielding ring (7), the top of the radio frequency isolation ring (8) and the electrostatic chuck (3);
the gas spraying disc (4) is positioned at the top of the plasma etching cavity (500) and is connected with the top plate (51), the top plate (51) is connected with the top of the annular side wall body (52), and the annular side wall body (52) is connected with the radio frequency shielding ring (7) through the bridging ring (6);
the radio frequency isolation ring (8) comprises a lower isolation ring body (81) and an upper isolation ring body (82) which are integrally formed, wherein the inner diameter of the lower isolation ring body (81) is smaller than that of the upper isolation ring body (82), the radio frequency feed-in rod (1) is wrapped by the lower isolation ring body (81) in an empty space, and the lower electrode base (2) and the electrostatic chuck (3) are wrapped by the upper isolation ring body (82);
the radio frequency shielding ring (7) is electrically connected and wraps the radio frequency feed-in rod (1) in an empty space mode, and wraps the radio frequency isolation ring (8).
2. The plasma etch reactor of claim 1, wherein the radio frequency shield ring (7) comprises an integrally formed lower shield ring body (71), a middle shield ring body (72), and an upper shield ring body (73);
the lower shielding ring body (71) and the middle shielding ring body (72) wrap the radio frequency feed-in rod (1) at intervals, and the upper shielding ring body (73) wraps the radio frequency isolation ring (8).
3. The plasma etch reactor of claim 2, wherein the radial thicknesses of the lower shielding ring body (71), the middle shielding ring body (72), and the upper shielding ring body (73) are respectively between 5-20 mm.
4. The plasma etch reactor of claim 1, wherein the radial thickness of the upper isolation ring (82) is greater than or equal to 10 mm.
5. The plasma etch reactor of claim 4, wherein the upper isolation ring (82) has a radial thickness of 20 mm.
6. Plasma etch reactor according to claim 1, characterized in that the radio frequency isolation ring (8) is made of ceramic, quartz, Vespel-type plastic, ULTEM-type plastic or Teflon-type plastic.
7. The plasma etching reactor according to claim 1, further comprising a radio frequency power supply (9) and a matcher (10), wherein the radio frequency power supply (9), the matcher (10) and the radio frequency feed-in rod (1) are electrically connected in sequence.
8. The plasma etch reactor of claim 1, further comprising a wafer edge adjustment ring (11), wherein the wafer edge adjustment ring (11) is disposed on a top surface of the rf isolation ring (8) and is coaxial with the rf isolation ring (8).
9. The plasma etch reactor of claim 1, further comprising a chamber wall protection ring (12), wherein the chamber wall protection ring (12) is located at an outer peripheral edge region of the plasma etch chamber (500) and is coaxial with the annular sidewall body (52).
10. The plasma etch reactor of claim 1, further comprising a plasma confinement ring (13), wherein the plasma confinement ring (13) is located directly above the bridging ring (6) and is coaxial with the bridging ring (6).
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| CN202021234360.5U CN212062403U (en) | 2020-06-29 | 2020-06-29 | Plasma etching reactor |
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| CN202021234360.5U CN212062403U (en) | 2020-06-29 | 2020-06-29 | Plasma etching reactor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117116734A (en) * | 2023-09-04 | 2023-11-24 | 珠海恒格微电子装备有限公司 | Closed control device for etching cavity and etching machine thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117116734A (en) * | 2023-09-04 | 2023-11-24 | 珠海恒格微电子装备有限公司 | Closed control device for etching cavity and etching machine thereof |
| CN117116734B (en) * | 2023-09-04 | 2024-03-19 | 珠海恒格微电子装备有限公司 | Closed control device for etching cavity and etching machine thereof |
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Address after: 201508 Room 12638, Building 2, No. 293, Weichang Road, Jinshan District, Shanghai Patentee after: Shanghai Bangxin Semiconductor Technology Co.,Ltd. Address before: Room 12638, Building 2, No. 293, Weichang Road, Jinshan District, Shanghai, 200000 Patentee before: Shanghai Bangxin Semiconductor Equipment Co.,Ltd. |