CN211438466U - Device for chemically etching microstructure by aid of sparks - Google Patents
Device for chemically etching microstructure by aid of sparks Download PDFInfo
- Publication number
- CN211438466U CN211438466U CN201921620592.1U CN201921620592U CN211438466U CN 211438466 U CN211438466 U CN 211438466U CN 201921620592 U CN201921620592 U CN 201921620592U CN 211438466 U CN211438466 U CN 211438466U
- Authority
- CN
- China
- Prior art keywords
- power supply
- pulse
- electrode
- electrolyte
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005530 etching Methods 0.000 title description 16
- 239000003792 electrolyte Substances 0.000 claims abstract description 44
- 238000012545 processing Methods 0.000 claims abstract description 43
- 238000003486 chemical etching Methods 0.000 claims abstract description 29
- 239000012224 working solution Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 13
- 239000012530 fluid Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 12
- 239000004020 conductor Substances 0.000 abstract description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 29
- 229910052721 tungsten Inorganic materials 0.000 description 29
- 239000010937 tungsten Substances 0.000 description 29
- 239000011521 glass Substances 0.000 description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 238000003754 machining Methods 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000003801 milling Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000003701 mechanical milling Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000000452 restraining effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- -1 pottery Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Landscapes
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
The utility model discloses a device of supplementary chemical etching microstructure of spark, include: the power supply system comprises a pulse power supply, the pulse power supply can output pulse direct-current voltage, the pulse direct-current voltage has forward bias, the anode of the pulse power supply is connected with the anode, and the cathode of the pulse power supply is connected with the tool electrode; and the working solution system comprises a processing tank, the processing tank is used for containing electrolyte, and the anode and the tool electrode are both positioned in the electrolyte in a working state. The utility model discloses an adoption can export the pulse power supply who has forward biased pulse DC voltage, can restrain the consumption of instrument electrode, and the work piece need not insert the power, does not receive the influence of work piece material conductivity ability itself, can realize conducting material and non-conducting material high efficiency, high accuracy, high surface quality processing.
Description
Technical Field
The utility model belongs to the technical field of micro-structure processing and specifically relates to a device of supplementary chemical etching micro-structure of spark is related to.
Background
At present, the method is applied to the biomedical field, the microreactor, the microelectronic chip and the high-end fieldMicrostructures are widely used in the field of timepiece covers and the like. Taking a micro-fluidic chip in the biological medical treatment as an example, a large number of long and thin micro-grooves with equal sections are arranged inside the micro-fluidic chip, so that the micro-fluidic chip can perform simultaneous analysis on hundreds of samples in a few minutes or even shorter time, and the liquid flow is controllable, and the consumption of samples and reagents is very little. However, the substrate material of the microfluidic chip is usually glass (the main component is SiO)2) The glass has the characteristics of high hardness and good chemical stability, so that the micro grooves on the surface of the glass are very difficult to process.
Common methods for processing the micro-groove on the surface of the glass comprise mechanical milling, high-temperature hot melting processing, wet etching, spark-assisted chemical etching and the like. The mechanical milling is a mechanical processing method for processing the surface of a workpiece by using a rotary multi-edge milling cutter as a cutter, has the characteristics of convenience and rapidness in operation, high processing efficiency and good size consistency, and is a main processing method for processing glass materials. However, since the hardness of a tool used for machining is required to be higher than that of a workpiece material, and the mohs hardness of glass itself is about 8, diamond or cubic boron nitride having a higher hardness needs to be used as the tool, and the tool is worn during machining, so that the cost for machining and milling glass is high. In addition, because the glass belongs to a hard and brittle material, the defects of edge breakage, microcrack and the like are easily generated in the mechanical processing, so the processing method has certain limitation on application; the high-temperature hot melting processing is a processing mode of heating a workpiece to a (liquid) melting point and then carrying out forming or connection, and has the advantages of stable processing, long service life, difficult corrosion and the like. However, because the melting point of glass is high and is generally over 1000 ℃, the portability of operation in a high-temperature environment is poor, and the material is easy to generate thermal stress and thermal deformation after cooling, the processing precision is poor, and the application is limited; the wet etching is a technique of immersing an etching material in an etching solution for etching, is pure chemical etching, and has the characteristics of good etching surface quality, high etching efficiency and stability. However, since the chemical properties of the glass are stable, only hydrofluoric acid (HF) or sodium hydroxide (NaOH) can be used as the etching solution, and wet etching is used for microstructure processing to remove the selective material of the mask, the mask preparation process is complex and tedious, and thus the wet etching has limitations in application. Spark Assisted Chemical Etching (SACE) is a machining process of composite electrochemical machining (ECD) and Electrical Discharge Machining (EDM), wherein a stable gas film is formed on the surface of a cathode through an electrochemical reaction, then breakdown occurs when the voltage reaches a critical value, and the workpiece material is selectively removed by utilizing the high temperature and high pressure generated during the breakdown and combining the etching characteristic of electrolyte on the workpiece. The spark-assisted chemical etching glass surface microstructure has the characteristics of stable processing, low processing cost, high processing precision and good processing surface quality, and is very suitable for processing the glass surface microstructure.
In recent years, the insulation materials such as spark-assisted chemical etching glass and the like or semiconductor materials have been the hot problem of research, and a lot of colleges and research institutes have made intensive research on the technology and also obtained certain research results. In summary, the disadvantages of the current spark-assisted chemical etching are mainly represented by: (1) when a constant direct current power supply is used, the side wall of the micro groove has large over-cut amount, so that the precise control of the machining precision is influenced; (2) when a pulse direct current is used, the over-cutting of the side wall of the micro-groove is suppressed, but the electrode is worn, so that the uniformity of the cross-sectional dimension is poor in long-groove processing.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a device of supplementary chemical etching microstructure of spark, can reach the effect of effectively restraining the loss of instrument electrode to prior art not enough.
The utility model adopts the technical proposal that:
the utility model provides a device of chemical etching microstructure is assisted to spark, include:
the power supply system comprises a pulse power supply, the pulse power supply can output pulse direct-current voltage, the pulse direct-current voltage has forward bias, the anode of the pulse power supply is connected with the anode, and the cathode of the pulse power supply is connected with the tool electrode;
and the working solution system comprises a processing tank, the processing tank is used for containing electrolyte, and the anode and the tool electrode are both positioned in the electrolyte in a working state.
The pulse direct-current voltage output by the pulse power supply has positive bias, namely the output pulse direct-current voltage has positive voltage bias compared with the standard direct-current voltage.
Preferably, the pulsed power supply is an arbitrary waveform power supply.
Preferably, the pulse power supply includes a pulse dc voltage output module and a bias voltage output module, which are connected by a circuit, the pulse dc voltage output module is configured to generate a standard pulse dc voltage, and the bias voltage output module is configured to bias the standard pulse dc voltage.
Preferably, the tool electrode is a cluster electrode consisting of at least two electrodes. The group electrode can be an array electrode formed by at least two single electrodes, and group hole synchronous machining or group groove milling machining can be achieved by arranging the group electrode.
Preferably, the feed adjusting device is connected with the tool electrode and used for adjusting the movement of the tool electrode. Feed adjustment devices include, but are not limited to, machine tool motion platforms.
Preferably, the working fluid system further comprises an electrolyte circulation tank, and the electrolyte circulates between the processing tank and the electrolyte circulation tank.
Preferably, a workpiece support frame is arranged in the processing tank.
The utility model has the advantages that:
in conventional spark assisted chemical etching, a standard pulsed dc voltage is used at a potential of 0V to cause the tool electrode to react, resulting in electrode wear. The utility model provides a device of chemical etching microstructure is assisted to spark adopts the pulse power supply that can export the pulse DC voltage that has forward bias, can restrain the consumption of instrument electrode, carries out forward bias's opportunity and the opportunity of bias voltage volume can the loss of control instrument electrode through control to standard pulse DC voltage when using the device and the volume of loss, and then independently, selective processing goes out the little slot of variable cross section shape. In addition, what form among the current electric spark machining technique is high temperature plasma, can act on the two poles of the earth for the two poles of the earth can all form the electrode loss, and require the work piece must be conducting material, so can only process conducting material, utilize the utility model discloses a device adds man-hour work piece and need not insert the power, does not receive the influence of work piece material electric conductivity ability itself, can realize conducting material and non-conducting material like a series of hard brittle materials such as glass, pottery, silicon and carborundum high efficiency, high accuracy, high surface quality processing.
Drawings
FIG. 1 is a schematic structural diagram of an apparatus for chemical etching a microstructure by spark assistance in example 1;
FIG. 2 is a schematic view showing the breakdown of the gas film in the processing area when the workpiece is processed by the tool electrode in example 1;
FIG. 3 is a polarization curve of a tungsten electrode in example 1 under 6mol/L NaOH solution;
FIG. 4 is a waveform diagram of the output of the pulse power source used in the experiment of example 1;
FIG. 5 is a representation of a tungsten electrode after spark-assisted chemical etching using standard pulsed DC and pulsed DC at 2V bias in example 1;
FIG. 6 is a representation of the tungsten electrode and resulting micro-grooves after spark assisted chemical etching in example 2.
Detailed Description
The conception and the resulting technical effects of the present invention will be described clearly and completely with reference to the following embodiments, so that the objects, features and effects of the present invention can be fully understood. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and other embodiments obtained by those skilled in the art without inventive labor based on the embodiments of the present invention all belong to the protection scope of the present invention.
Example 1
The embodiment of the utility model provides a device of chemical etching microstructure is assisted to spark, see figure 1, the device includes pulse power supply 1, pulse power supply 1 can export pulse direct current voltage, pulse direct current voltage has forward bias, and pulse power supply 1's positive pole is connected positive pole 3, and pulse power supply 1's negative pole connecting tool electrode 4, the device still include the working solution system, and including processing groove 2 in the working solution system, when operating condition, splendid attire has electrolyte 7 in the processing groove 2, and positive pole 3 and tool electrode 4 form the route in arranging electrolyte 7 in, and tool electrode 4 is used for carrying out the etching to work piece 5. The pulse power supply 1 can be any waveform power supply; the power supply can also be a power supply with a pulse direct-current voltage output module and a bias voltage output module which are connected by a circuit, the pulse direct-current voltage output module can generate standard pulse direct-current voltage, the bias voltage output module can bias the standard pulse direct-current voltage so that the pulse power supply finally outputs pulse direct-current voltage with forward bias, the pulse direct-current voltage output module is of an existing structure such as an existing pulse direct-current power supply, and the bias voltage output module is of an existing structure such as a direct-current voltage deflection circuit mentioned in CN 1881785A. In this embodiment, the pulse power supply 1 is any waveform power supply, the anode 3 is a graphite electrode, and the tool electrode 4 is a tungsten electrode. In order to facilitate the control and adjustment of the distance between the tool electrode 4 and the workpiece 5, the device for spark-assisted chemical etching of microstructures in the preferred embodiment may further comprise a feed adjustment device 8, and specifically, the feed adjustment device 8 may be a machine tool motion platform, which is connected to the tool electrode 4 through an electrode mounting clamp 9, and thereby controls and adjusts the movement of the tool electrode 4. In some preferred embodiments, a workpiece support frame 6 is further disposed in the processing tank 2 to support the workpiece 5. In some preferred embodiments, the working fluid system further comprises an electrolyte circulation tank 10, and in the working state, the electrolyte 7 is pumped from the processing tank 2 to the electrolyte circulation tank 10 by an electrolyte outflow pump 11, and the electrolyte 7 is pumped from the electrolyte circulation tank 10 by an electrolyte inflow pump 12 and flows into the processing tank 2 through a filter 13.
The device for chemically etching the microstructure by the aid of the sparks in the figure 1 is used for etching, and the following operation steps are adopted in an experiment:
1. clamping: installing a workpiece 5 on a workpiece support frame 6, pressing the workpiece by using external mechanical force, fixing the workpiece, wherein the liquid level of an electrolyte 7 is 1-3mm higher than the upper surface of the workpiece 5, and the workpiece 5 is glass in the embodiment; the graphite electrode is soaked in the electrolyte 7; the tungsten electrode is clamped on the electrode mounting clamp 9, and the electrode mounting clamp 9 is connected with a machine tool motion platform and can move along XYZ axes. Similarly, other types of feed adjusting devices, such as those in which the upper portion performs only Z-axis feeding, the lower portion performs XY-direction movement, and the lower portion performs XYZ-direction movement, can be used to finally realize XYZ-axis movement control.
2. Determining an initial machining gap: the Z-axis height is adjusted to determine the distance between the tungsten electrode and the workpiece 5, namely the initial machining gap, and the gap can be adjusted according to the process to achieve the best machining effect.
3. Electrolyte circulation: and starting the electrolyte inflow pump 12, pumping the electrolyte 7 out of the electrolyte circulation tank 10, flowing the electrolyte into the processing tank 2 after passing through the filter 13, pumping the electrolyte 7 back into the electrolyte circulation tank 10 under the action of the electrolyte outflow pump 11 to form electrolyte circulation, and controlling the flow rate between the two pumps to ensure that the liquid level of the electrolyte 7 is 1-3mm higher than the upper surface of the workpiece 5 in the whole process, wherein the electrolyte 7 is 6mol/LNaOH in the embodiment.
4. The power connection mode is as follows: the positive electrode of the pulse power supply 1 is connected with a graphite electrode, and the negative electrode is connected with a tungsten electrode.
5. Spark-assisted chemical etching of microstructures: and setting a target waveform on the arbitrary waveform power supply, and starting the arbitrary waveform power supply and the double pumps. Fig. 2 is a schematic view showing the breakdown of the gas film in the processing area when the workpiece is processed by using the tool electrode, as shown in fig. 2, the electrolyte is electrolyzed under the action of the electric field to generate a large number of hydrogen bubbles 14, the soaking section of the tungsten cathode soaked in the electrolyte (the area ratio of the soaking section of the graphite electrode soaked in the electrolyte to the soaking section of the tungsten electrode soaked in the electrolyte is more than 100) is quickly surrounded by the bubbles, the gas film is finally formed as the bubbles grow and gather, and when the voltage reaches a critical value, the arc 15 breakdown is formed. When the electric arc 15 breaks down, a plasma channel with a certain temperature (the temperature is 300-500 ℃) is formed, and the working liquid is extruded by instant high-temperature expansion, so that bubbles are cavitated to generate a hydraulic action. The local high temperature and the hydraulic action generated by the induction of the tungsten electrode needle point strengthen the etching of the electrolyte to the glass, and the glass is punched and milled along with the movement and the feeding of the tool electrode 4.
As shown in FIG. 3, the polarization curve of the tungsten electrode (connected to the positive electrode to form the anode) in 6mol/L NaOH (i.e., the electrolyte used in the spark-assisted chemical etching microstructure test in this example) solution was investigated, and the equilibrium potential U of the tungsten electrode under the above-mentioned processing conditions can be seen from the polarization curve0is-0.9V, namely tungsten is subjected to anodic oxidation reaction when the anode voltage is more than-0.9V, and the ion reaction equation is as follows:
W+8OH-→WO4 2-+4H2O+6e-
when the tungsten electrode undergoes an anodic oxidation reaction, the electrode material is consumed, i.e., electrode loss is formed.
Different from the electrode connection method when the polarization curve is made, when the spark-assisted chemical etching microstructure is carried out, the tungsten electrode is connected with the negative electrode, the pulse power supply is switched on for etching, and the pulse power supply output waveform shown in figure 4 is adopted in the experiment. When the connected pulse power supply outputs a standard pulse dc voltage, as shown in fig. 4 (a), the whole pulse period of the standard pulse dc voltage is ρ, and in the positive half period t1The DC voltage output in time is U rho, and in the negative half period t0Voltage U output in timefThe | equilibrium potential U0| -0.9V | is plotted above the zero line of the coordinate axis, at 0, because in practice the negative potential of the voltage waveform causes the oxidation reaction of the tungsten electrode. In electrochemical machining, the equilibrium potential is actually zero line where oxidation-reduction reaction occurs, so that a potential (0V) below the equilibrium potential in fig. 4 (a) will cause an anodic oxidation reaction of the tungsten electrode, resulting in electrode lossThe reason for the electrode loss in conventional standard pulsed dc spark assisted chemical etching is also explained. In order to overcome the defects, the embodiment of the utility model provides a standard pulse direct current voltage to output carries out forward bias, can realize restraining the consumption of instrument electrode, works as forward bias's voltage value UtWhen the voltage waveform is larger than the absolute value of the equilibrium potential of the tool electrode in the electrolyte (2V larger than-0.9V |), as shown in (b) of fig. 4, the tungsten electrode does not undergo the anodic oxidation reaction at the potential line lower than the equilibrium potential, and thus the electrode wear can be completely suppressed.
The process verification is respectively carried out on the standard pulse direct current and the 2V biased pulse direct current spark assisted chemical etching, and the parameters of the standard pulse direct current voltage adopted in the comparative example 1 are as follows: the U ρ ρ ρ is 34V, the frequency is 1kHz, the duty ratio is 50%, the pulse dc voltage used in the embodiment 2 is 2V forward biased on the standard pulse dc voltage of the comparative example, other parameters are the same, the electrolyte used in the process verification is 6mol/L NaOH, the diameter of the tool electrode tungsten electrode is 300 μm, the tool electrode is immersed in 1mm, and the tungsten electrodes used in the comparative example 1 and the embodiment 2 are characterized after being processed for 60s, as shown in fig. 5, wherein (a) in fig. 5 shows a tungsten electrode diagram after the spark-assisted chemical etching is performed on the comparative example 1 by using the standard pulse dc voltage; fig. 5 (b) shows a diagram of a tungsten electrode after spark-assisted chemical etching in example 1 using a pulsed dc voltage with a forward bias of 2V. As can be seen from the figure, the tungsten electrode has obvious loss under the standard pulse direct current, the electrode diameter is reduced from 300 μm to 221 μm, while the tungsten electrode loss under the pulse direct current with forward bias of 2V is completely inhibited, and the electrode diameter is kept unchanged at 300 μm.
In the present embodiment, the tool electrode is exemplified by a single tungsten electrode, and when two or more electrode group electrodes are used as the tool electrode, group hole synchronous machining or group groove milling can be realized, and the group electrode can be used repeatedly. In the embodiment, the pulse power supply outputs the pulse direct-current voltage with forward bias in the whole pulse period, the forward bias voltage bias is larger than the absolute value of the balance voltage of the working electrode, the loss of the tool electrode is restrained, and the time for performing forward bias on the standard pulse direct-current waveform and the forward bias voltage bias can be controlled according to actual requirements in the actual operation process, so that the time for performing loss and the loss of the tool electrode are controlled, and further the processing of the variable-section-shape microstructure is realized.
Example 2
In this embodiment, the device for chemically etching a microstructure with spark assistance in fig. 1 is used for etching, and parameters of the pulse dc power supply are as follows: the dc voltage was 50V, the frequency was 1kHz, the duty cycle was 50%, the forward bias voltage was 2V, the electrolyte used was 6mol/LNaOH, the tool electrode used was a tungsten electrode with a diameter of 300 μm, the workpiece was quartz glass, the workpiece was immersed 1mm, the initial gap between the tool electrode and the workpiece was 10 μm, the bite was 100 μm, the machining length was 1mm, and the workpiece feed rate was 1 μ/s. The tungsten electrode after processing and the micro-groove generated on the quartz glass are characterized by performing spark-assisted chemical etching on the surface of the quartz glass by using 2V biased pulse direct current, as shown in FIG. 6, wherein (a) in FIG. 6 shows the tungsten electrode after processing, no electrode loss can be seen, the diameter of the tungsten electrode is kept unchanged at 300 μm, and (b) in FIG. 6 shows the micro-groove generated after processing, it can be seen that the width of the micro-groove processed by 2V biased pulse direct current is 345 μm, the single-side over-cut amount is 22.5 μm, the dimensional uniformity in the length direction of the groove is good, the width error is within 5 μm, and the processed surface is smooth due to the groove processed by chemical etching.
Claims (7)
1. An apparatus for spark assisted chemical etching of microstructures comprising:
the power supply system comprises a pulse power supply, the pulse power supply can output pulse direct-current voltage, the pulse direct-current voltage has forward bias, the anode of the pulse power supply is connected with the anode, and the cathode of the pulse power supply is connected with the tool electrode;
and the working solution system comprises a processing tank, the processing tank is used for containing electrolyte, and the anode and the tool electrode are both positioned in the electrolyte in a working state.
2. The apparatus of claim 1, wherein the pulsed power supply is an arbitrary waveform power supply.
3. The apparatus of claim 1, wherein the pulsed power supply comprises a pulsed dc voltage output module and a bias voltage output module electrically connected, the pulsed dc voltage output module configured to generate a standard pulsed dc voltage, the bias voltage output module configured to bias the standard pulsed dc voltage.
4. A spark assisted chemical etching apparatus for microstructure according to any of claims 1 to 3 wherein the tool electrode is a group electrode consisting of at least two electrodes.
5. The apparatus of any of claims 1-3, further comprising a feed adjustment device coupled to the tool electrode for adjusting the movement of the tool electrode.
6. The apparatus of any of claims 1-3, wherein the working fluid system further comprises an electrolyte circulation tank, wherein the electrolyte circulates between the process tank and the electrolyte circulation tank.
7. An apparatus for spark assisted chemical etching of a microstructure according to any one of claims 1 to 3 wherein a workpiece support shelf is provided in the processing tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921620592.1U CN211438466U (en) | 2019-09-26 | 2019-09-26 | Device for chemically etching microstructure by aid of sparks |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921620592.1U CN211438466U (en) | 2019-09-26 | 2019-09-26 | Device for chemically etching microstructure by aid of sparks |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211438466U true CN211438466U (en) | 2020-09-08 |
Family
ID=72297110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921620592.1U Active CN211438466U (en) | 2019-09-26 | 2019-09-26 | Device for chemically etching microstructure by aid of sparks |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211438466U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110539044A (en) * | 2019-09-26 | 2019-12-06 | 南方科技大学 | Method and device for chemically etching microstructure by aid of sparks |
-
2019
- 2019-09-26 CN CN201921620592.1U patent/CN211438466U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110539044A (en) * | 2019-09-26 | 2019-12-06 | 南方科技大学 | Method and device for chemically etching microstructure by aid of sparks |
| CN110539044B (en) * | 2019-09-26 | 2024-09-03 | 南方科技大学 | Method and device for chemically etching microstructure by spark assistance |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110539044B (en) | Method and device for chemically etching microstructure by spark assistance | |
| Kuo et al. | Wire electrochemical discharge machining (WECDM) of quartz glass with titrated electrolyte flow | |
| Cheng et al. | Magnetic field-assisted electrochemical discharge machining | |
| WO2008140058A1 (en) | Method for processing silicon base material, article processed by the method, and processing apparatus | |
| Mochimaru et al. | Micro hole processing using electro-chemical discharge machining | |
| CN103008807A (en) | Electrochemical discharge machining device and method based on force feedback control feeding system | |
| CN103920948A (en) | Device and method for controllable gas-film micro-electrochemical discharge wire-cutting processing | |
| Mallick et al. | Experimental investigation for improvement of micro-machining performances of µ-ECDM process | |
| CN102528187B (en) | Reversed alignment electrochemical discharge machining method and device | |
| CN211438466U (en) | Device for chemically etching microstructure by aid of sparks | |
| CN111151831B (en) | Method and device for bipolar electrodischarge machining of workpieces | |
| CN105127528B (en) | The coaxial fliud flushing method and device of array group act on sets micro hole electric machining | |
| CN115582589A (en) | Controllable gas film porous electrode electrolytic electric spark machining system and machining method | |
| Mishra et al. | Fabrication of deep microfeatures in glass substrate using electrochemical discharge machining for biomedical and microfluidic applications | |
| CN110561627A (en) | Cutting processing device and method applied to boron carbide | |
| CN111266678B (en) | Method for strengthening mass transfer efficiency in electrolytic machining micro-gap based on cathodic hydrogen evolution and control system | |
| Mohitkar et al. | Improvement in machining performances of SiC workpiece using TW-electro chemical spark machining | |
| TWI722646B (en) | Device for slicing ingot | |
| CN108284259B (en) | A kind of half immersion wire electrochemical micro-machining fixture and radial fliud flushing method | |
| Tang et al. | Discussing the measure of improving pyrex glass ECDM removal rate | |
| CN114378381B (en) | Blind groove machining device and blind groove machining method for quartz glass | |
| Weng | Fabrication of microelectrodes for EDM machining by a combined etching process | |
| CN111805022A (en) | Plasma-assisted electrolytic machining method and device for implementing same | |
| KR101474327B1 (en) | Manufacturing apparatus for using spark-assisted machining and manufacturing method thereof | |
| CN216990234U (en) | Self-discharge machining device for electric spark electrode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |