CN210390448U

CN210390448U - Grid line screen printing plate for front electrode of crystalline silicon solar cell

Info

Publication number: CN210390448U
Application number: CN201920701692.0U
Authority: CN
Inventors: 胡亚洲; 李海波; 肖文明
Original assignee: Jiangsu Runyang Yueda Photovoltaic Technology Co Ltd
Current assignee: Jiangsu Runyang Yueda Photovoltaic Technology Co Ltd
Priority date: 2019-05-16
Filing date: 2019-05-16
Publication date: 2020-04-24
Anticipated expiration: 2029-05-16

Abstract

The utility model belongs to the technical field of crystalline silicon solar cell makes, especially, relate to a crystalline silicon solar cell positive electrode grid line half tone, including main grid line, a plurality of thin grid line and reposition of redundant personnel line, wherein, this main grid line is including a plurality of horizontal main grid lines that are parallel to each other and a plurality of main grid lines of indulging that are parallel to each other, and a plurality of thin grid lines and this main grid line mutually perpendicular distribute, are equipped with a plurality of reposition of redundant personnel lines between the thin grid line. The utility model discloses simple structure, practicality are strong, through half tone graphic design, have realized the make full use of material, have satisfied subassembly output power requirement, have improved the utilization ratio of product, have effectively reduced manufacturing cost.

Description

Grid line screen printing plate for front electrode of crystalline silicon solar cell

Technical Field

The invention belongs to the field of manufacturing of crystalline silicon solar cells, and particularly relates to a crystalline silicon solar cell front electrode grid line screen printing plate.

Background

The crystalline silicon solar cell is an electronic component capable of converting solar energy into electric energy. The preparation of the crystalline silicon solar cell generally comprises the steps of texturing, diffusion, film coating, screen printing, sintering and the like. The texture making is divided into single crystal texture making and polycrystal texture making, wherein the single crystal cell forms a pyramid texture surface on the surface of a silicon wafer by using an alkali texture making method, the polycrystal cell forms a pit texture surface on the surface of the silicon wafer by using an acid etching method, and the texture surface on the surface of the silicon can increase the absorption of sunlight on the surface of the cell to achieve the light trapping effect; the diffusion process is to form a P-N junction inside a silicon wafer in a thermal diffusion mode, so that when light irradiates, voltage can be formed inside the silicon wafer, and the P-N junction is the basis of power generation of a solar cell; the film coating process is used for reducing the recombination of minority carriers on the surface of the cell and improving the conversion efficiency of the crystalline silicon solar cell; the screen printing process is to fabricate the electrodes of the solar cell so that the current can be conducted out when the light is irradiated. The screen printing is the most widely applied process in the preparation of the existing crystal silicon battery, and the process sequence comprises the steps of printing and drying a back electrode, then printing and drying an aluminum back field, finally printing and drying a front electrode, and then sintering to enable silver paste used for preparing the electrode to be in contact with the battery.

In a front electrode of a crystalline silicon solar cell, an electrode structure generally comprises a criss-cross main grid line and an auxiliary grid line, and the main grid line is electrically connected with the auxiliary grid line. When the solar cell is illuminated, the cell can generate current, the current flows to the surface electrode secondary grid lines through the internal emitter, is collected by the secondary grid lines and then converges to the cell main grid lines for leading out. The current is lost during collection at the finger lines, which we refer to as resistive power loss. The main grid lines and the auxiliary grid lines of the battery are arranged on the light receiving surface of the battery, so that part of light is inevitably shielded from irradiating the surface of the battery, the effective light receiving area of the battery is reduced, and the part of loss is called optical loss. No matter the battery is a P-type or N-type battery, as long as the positive surface of the battery has an electrode structure, continuous optimization of the electrode structure needs to be considered, so that the purposes of reducing the shading area and ensuring smooth conduction of current are achieved.

In conclusion, with the development of new energy technology, the development of the crystalline silicon solar cell is rapid. In the production process of the solar cell, the surface area of the crystalline silicon cell is increased, the manufacturing cost is reduced, and the output power of the cell is improved, which is a primary objective. At present, the photovoltaic industry mainly uses 156.75mm square battery pieces and components thereof, and a production line generally uses a conventional screen design pattern, which cannot meet order requirements. Therefore, in order to improve the material utilization rate, reduce the production cost and meet the requirement of the output power of the module, a front electrode grid line screen printing plate pattern needs to be designed urgently to ensure the market competitiveness.

Disclosure of Invention

The utility model aims at solving the not enough of above-mentioned prior art, especially to the not enough of present crystal silicon industrialization positive electrode grid line half tone, thereby provide one kind and can adapt to the positive electrode grid line half tone that large-scale streamlined production satisfied subassembly output requirement.

The technical scheme adopted by the invention for solving the defects of the prior art is as follows: the utility model provides a crystalline silicon solar cell positive electrode grid line half tone which characterized in that includes:

the main grid lines comprise a plurality of parallel transverse main grid lines and a plurality of parallel longitudinal main grid lines;

a plurality of thin gate lines, the thin gate lines and the main gate lines being vertically distributed;

and a plurality of shunt lines arranged between the thin grid lines.

Preferably, the crystalline silicon solar cell front electrode grid line screen printing plate according to claim 1, wherein the transverse main grid lines are arranged transversely and parallelly and are located in the middle of the cell.

Preferably, the length of the transverse busbar line is 125.4 mm.

Preferably, the spacing between a plurality of the transverse bus bars is 31.35 mm.

Preferably, the longitudinal main grid lines are vertically arranged in parallel and are positioned in the middle of the edge of the battery.

Preferably, the solar cell further comprises a plurality of small cells arranged at the top corners.

Preferably, the size of the small battery is 15.675mm 15.675 mm.

The grid line screen printing plate has the beneficial effects that the grid line screen printing plate comprises the main grid line, the plurality of thin grid lines and the shunt lines, and a plurality of small cells are designed at the top corners, so that through the pattern design of the screen printing plate, the full utilization of materials is realized, the requirement of the output power of the assembly is met, the utilization rate of the product is improved, and the production cost is reduced.

Drawings

Fig. 1 is a schematic structural diagram of an embodiment of a grid line screen for a front electrode of a crystalline silicon solar cell, which is also a schematic diagram of a preferred embodiment.

Detailed Description

The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.

Referring to fig. 1, which is a schematic structural diagram of an embodiment of a front electrode grid line screen of a crystalline silicon solar cell according to the present invention, and is also a schematic diagram of a preferred embodiment, as shown in the figure, the front electrode grid line screen 1 of the crystalline silicon solar cell includes a main grid line 11, a plurality of thin grid lines 12 and a shunt line 13, wherein the main grid line 11 includes five parallel horizontal main grid lines 111 and two parallel vertical main grid lines 112; a plurality of the thin gate lines and the main gate line 11 are distributed perpendicular to each other; a plurality of shunt lines 13 are provided between the thin gate lines 12.

Preferably, the transverse main grid lines 111 are arranged transversely and parallelly, are located in the middle of the cell, and have a length of 125.4mm, and the interval between the plurality of transverse main grid lines 111 is 31.35 mm.

Preferably, the vertical bus bars 112 are arranged vertically and in parallel and are located in the middle of the edge of the battery.

Preferably, the crystalline silicon solar cell front electrode grid line screen printing plate 1 further comprises a plurality of small cells 14 arranged at the top corners, and the size of each small cell 14 is 15.675mm by 15.675 mm.

It will be appreciated by persons skilled in the art that the embodiments of the invention described above and shown in the drawings are given by way of example only and are not limiting of the invention. The objects of the invention have been fully and effectively accomplished. The functional and structural principles of the present invention have been shown and described in the examples, and any variations or modifications of the embodiments of the present invention may be made without departing from the principles.

Claims

1. The utility model provides a crystalline silicon solar cell positive electrode grid line half tone which characterized in that includes:

and a plurality of shunt lines arranged between the thin grid lines.

2. The crystalline silicon solar cell front electrode grid line screen printing plate as claimed in claim 1, wherein the transverse main grid lines are transversely and parallelly designed and are positioned in the middle of the cell.

3. The crystalline silicon solar cell front electrode grid line screen printing plate as claimed in claim 2, wherein the length of the transverse main grid line is 125.4 mm.

4. The crystalline silicon solar cell front electrode grid line screen printing plate as claimed in claim 3, wherein the interval of the plurality of transverse main grid lines is 31.35 mm.

5. The crystalline silicon solar cell front electrode grid line screen printing plate as claimed in claim 4, wherein the vertical main grid lines are vertically and parallelly designed and are positioned in the middle of the edge of the cell.

6. The crystalline silicon solar cell front electrode grid line screen printing plate as claimed in claim 5, further comprising a plurality of small cells arranged at the top corners.

7. The crystalline silicon solar cell front electrode grid line screen printing plate as claimed in claim 6, wherein the size of the small cell is 15.675mm x 15.675 mm.