CN219267612U - Cleaning device for etching groove and semiconductor machine - Google Patents
Cleaning device for etching groove and semiconductor machine Download PDFInfo
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- CN219267612U CN219267612U CN202320590800.8U CN202320590800U CN219267612U CN 219267612 U CN219267612 U CN 219267612U CN 202320590800 U CN202320590800 U CN 202320590800U CN 219267612 U CN219267612 U CN 219267612U
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- etching
- circulation
- groove
- dosing
- etching groove
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- 238000005530 etching Methods 0.000 title claims abstract description 110
- 238000004140 cleaning Methods 0.000 title claims abstract description 69
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 90
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000003814 drug Substances 0.000 claims description 16
- 238000004891 communication Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 17
- 239000007788 liquid Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- DAFQZPUISLXFBF-UHFFFAOYSA-N tetraoxathiolane 5,5-dioxide Chemical compound O=S1(=O)OOOO1 DAFQZPUISLXFBF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model provides a cleaning device for an etching groove and a semiconductor machine table, wherein the cleaning device comprises: the hydrogen peroxide dosing structure is communicated with the etching groove; the sulfuric acid dosing tube is communicated with the etching groove; the circulation structure, circulation structure with etching groove intercommunication, circulation structure includes: the circulating groove is arranged at the periphery of the etching groove; the circulating pipe is communicated between the circulating groove and the etching groove; and the circulating pump is arranged on the circulating pipe. The cleaning device for the etching groove and the semiconductor machine can clean the inner wall of the etching groove.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a cleaning device for an etching groove and a semiconductor machine table.
Background
In the etching process of the wafer, materials on the wafer are easily attached to the inner wall of the etching tank, and residues may be attached to the inner wall of the etching tank. Because the residue can not be cleaned in time, when other wafers are etched later, the residue can possibly fall off from the inner wall of the etching groove and be adhered to the surface of the wafer, so that the wafer is defective and the quality of the wafer is affected. Therefore, there is a need for improvement.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present utility model is to provide a cleaning device for an etching tank and a semiconductor device, which can clean the inner wall of the etching tank.
To achieve the above and other related objects, the present utility model provides a cleaning device for an etching tank, comprising:
the hydrogen peroxide dosing structure is communicated with the etching groove;
the sulfuric acid dosing tube is communicated with the etching groove;
the circulation structure, circulation structure with etching groove intercommunication, circulation structure includes:
the circulating groove is arranged at the periphery of the etching groove;
the circulating pipe is communicated between the circulating groove and the etching groove; and
and the circulating pump is arranged on the circulating pipe.
In an embodiment of the present utility model, the height of the horizontal plane on the upper surface of the circulation groove is represented as a first height, the height of the horizontal plane on the upper surface of the etching groove is represented as a second height, and the first height is greater than the second height.
In one embodiment of the utility model, one end of the circulating pipe is communicated with the bottom of the circulating groove, and the other end of the circulating pipe is communicated with one side of the bottom of the etching groove.
In an embodiment of the present utility model, the circulation structure further includes a heater, and the heater is disposed on the circulation pipe.
In an embodiment of the utility model, the circulation structure further comprises a filter, and the filter is arranged on the circulation pipe.
In an embodiment of the present utility model, the circulation pump, the heater and the filter are sequentially disposed on the circulation pipe.
In one embodiment of the present utility model, the hydrogen peroxide dosing structure comprises:
a dosing box; and
and the medicine outlet pipe is communicated between the medicine adding box and the etching groove.
In an embodiment of the utility model, the hydrogen peroxide dosing structure further comprises a dosing tube, and the dosing tube is communicated with the dosing box.
In an embodiment of the utility model, the hydrogen peroxide dosing structure further comprises a dosing pump, and the dosing pump is arranged on the drug outlet pipe.
The utility model also provides a semiconductor machine, comprising:
a machine body;
the etching groove is arranged on the machine body;
the cleaning device is arranged on one side of the etching groove, and comprises:
the hydrogen peroxide dosing structure is communicated with the etching groove;
the sulfuric acid dosing tube is communicated with the etching groove;
the circulation structure, circulation structure with etching groove intercommunication, circulation structure includes:
the circulating groove is arranged at the periphery of the etching groove;
the circulating pipe is communicated between the circulating groove and the etching groove; and
and the circulating pump is arranged on the circulating pipe.
As described above, the present utility model provides a cleaning apparatus for an etching bath and a semiconductor machine capable of sufficiently cleaning residues adhering to the inner wall of the etching bath, and preventing residues suspended in a cleaning liquid from flowing back into the etching bath, thereby improving cleaning efficiency. The residue can not influence other subsequent wafers, can prevent the residue from influencing the quality of the wafers, can improve the quality of the wafers to a certain extent, and then can improve the running time of the semiconductor machine, and can improve the productivity of the semiconductor machine to a certain extent.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present utility model, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view showing a structure of an etching tank cleaning device according to the present utility model;
fig. 2 is a schematic diagram showing the operation of a circulation structure in a cleaning apparatus for an etching tank according to the present utility model.
Description of element numbers:
10. a hydrogen peroxide dosing structure; 11. a medicine inlet pipe; 12. a dosing box; 13. a medicine outlet pipe; 14. a dosing pump;
20. etching a groove;
30. a circulation structure; 31. a circulation tank; 32. a circulation pipe; 33. a circulation pump; 34. a heater; 35. a filter;
40. sulfuric acid dosing tube.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Referring to fig. 1, the present utility model provides a semiconductor machine capable of processing a wafer to form corresponding semiconductor chips. The semiconductor tool may include an etch bath 20, a cleaning device, and a tool body. Wherein, the etching groove 20 can be arranged on the machine body, and the cleaning device can be arranged on one side of the etching groove 20. The etching groove 20 can etch the wafer, and the machine body can also process the wafer, so that the wafer can be processed into a needed semiconductor chip through the matching of the etching groove 20 and the machine body. The cleaning device may perform a cleaning process on the etching tank 20 to clean residues generated during the wafer etching process, preventing the residues from adhering to the inner walls of the etching tank 20.
Referring to fig. 1, in one embodiment of the present utility model, a cleaning device may include a hydrogen peroxide dosing structure 10, a circulation structure 30, and a sulfuric acid dosing tube 40. The hydrogen peroxide dosing structure 10 may be disposed at one side of the etching tank 20, and the hydrogen peroxide dosing structure 10 may be in communication with the etching tank 20 and may add hydrogen peroxide into the etching tank 20. Sulfuric acid dosing tube 40 may be in communication with etch tank 20 and may add sulfuric acid to etch tank 20. By mixing sulfuric acid with hydrogen peroxide, a cleaning liquid can be formed, and the cleaning liquid can clean residues on the inner wall of the etching tank 20. The circulation structure 30 can be disposed at the periphery of the etching tank 20, so as to drive the cleaning solution in the etching tank 20 to circulate, thereby improving the cleaning efficiency.
Referring to fig. 1, in one embodiment of the present utility model, a hydrogen peroxide dosing structure 10 may include a dosing tube 11, a dosing tank 12, a dosing tube 13, and a dosing pump 14. Wherein, the medicine feeding pipe 11 can be arranged at one side of the top of the medicine adding box 12, the medicine discharging pipe 13 can be arranged at one side of the bottom of the medicine adding box 12, and then the hydrogen peroxide can be added into the medicine adding box 12 through the medicine feeding pipe 11. One end of the medicine outlet pipe 13 can go deep into the etching groove 20, and then the hydrogen peroxide in the medicine adding box 12 can be transmitted into the etching groove 20 through the medicine outlet pipe 13. Of course, in order to smoothly transfer the hydrogen peroxide in the dosing tank 12 to the etching tank 20, the dosing pump 14 may be provided on the dispensing tube 13, and the hydrogen peroxide in the dosing tank 12 may be pumped to the etching tank 20 by the dosing pump 14.
Referring to fig. 1 and 2, in one embodiment of the present utility model, the circulation structure 30 may include a circulation tank 31, a circulation pipe 32, a circulation pump 33, a heater 34, and a filter 35. The circulation groove 31 may be disposed at the periphery of the etching groove 20, and the height of the horizontal plane where the upper surface of the circulation groove 31 is located may be represented as a first height, and the height of the horizontal plane where the upper surface of the etching groove 20 is located may be represented as a second height, where the first height is greater than the second height. A tank body may be formed between the circulation tank 31 and the outer wall of the etching tank 20, and thus the cleaning liquid overflowing from the etching tank 20 may flow into the circulation tank 31. The bottom of the circulation tank 31 may be connected to one end of the circulation pipe 32, the other end of the circulation pipe 32 may be connected to one side of the bottom of the etching tank 20, and the circulation pipe 32 may be provided with a circulation pump 33. In the process of pumping sulfuric acid into the etching tank 20 through the sulfuric acid dosing pipe 40, when the etching tank 20 is completely filled with the cleaning solution formed by mixing sulfuric acid and hydrogen peroxide, the excessive cleaning solution overflows from the upper end opening of the etching tank 20 and flows into the circulating tank 31. The unnecessary cleaning solution can partially fill the groove body formed between the circulation groove 31 and the outer wall of the etching groove 20, at this time, the circulation pump 33 can work, and then the cleaning solution in the circulation groove 31 can be pumped into the etching groove 20, at this time, the cleaning solution in the etching groove 20 can flow into the circulation groove 31, and further the circulation flow of the cleaning solution is realized. At this time, the cleaning solution in the etching tank 20 can continuously flow, so that the contact area between the cleaning solution and the residue on the inner wall of the etching tank 20 can be increased, and the residue can be driven to fall off from the inner wall of the etching tank 20, so as to improve the cleaning efficiency of the residue.
Referring to fig. 1, in one embodiment of the present utility model, since the cleaning solution is required to remove residues on the inner wall of the etching tank 20 under high temperature conditions, a heater 34 may be provided on the circulation pipe 32, and the heater 34 may heat the cleaning solution flowing into the circulation pipe 32. The heating temperature of the heater 34 may be not limited, and in this embodiment, the heating temperature of the heater 34 may be in a range of 100 ℃ to 160 ℃, for example, the temperature of the cleaning liquid may be 100 ℃, the temperature of the cleaning liquid may be 130 ℃, and the temperature of the cleaning liquid may be 160 ℃ after the heater 34 heats the cleaning liquid in the circulation pipe 32. Meanwhile, as residues, of which suspended parts fall off from the inner wall of the etching tank 20, in the cleaning liquid need to be treated in the cleaning process, and the residues are prevented from flowing back into the etching tank 20, a filter 35 can be arranged on the circulating pipe 32, and residues in the cleaning liquid can be filtered through the filter 35, so that the cleaning effect is improved.
Referring to fig. 1, in one embodiment of the present utility model, a circulation pump 33, a heater 34, and a filter 35 may be provided on the circulation pipe 32. The distribution positions of the circulation pump 33, the heater 34, and the filter 35 may be unlimited. For example, in the present embodiment, the circulation pump 33, the heater 34, and the filter 35 may be sequentially provided on the circulation pipe 32. In other embodiments, the circulation pump 33, the filter 35, and the heater 34 may be sequentially disposed on the circulation pipe 32. The heater 34, the filter 35, and the circulation pump 33 may be sequentially provided on the circulation pipe 32. The heater 34, the circulation pump 33, and the filter 35 may be sequentially provided on the circulation pipe 32. The filter 35, the circulation pump 33, and the heater 34 may be sequentially disposed on the circulation pipe 32. The filter 35, the heater 34, and the circulation pump 33 may be sequentially provided on the circulation pipe 32. The specific distribution positions of the circulation pump 33, the heater 34 and the filter 35 on the circulation pipe 32 can be set according to actual demands.
Referring to fig. 1, in one embodiment of the present utility model, the cleaning solution may include hydrogen peroxide (H 2 O 2 ) With sulfuric acid (H) 2 SO 4 ). Wherein the ratio of the volume of hydrogen peroxide to the volume of sulfuric acid may be in the range of 1:4 to 1:6. For example, the ratio of the volume of hydrogen peroxide to the volume of sulfuric acid may be 1:4. The ratio of the volume of hydrogen peroxide to the volume of sulfuric acid may also be 1:5. The ratio of the volume of hydrogen peroxide to the volume of sulfuric acid may also be 1:6. The sulfuric acid may be concentrated sulfuric acid of 97% concentration. The ratio of the volume of hydrogen peroxide to the volume of sulfuric acid is 1:5. In this embodiment, the method can be carried out by peroxidationThe hydrogen dosing structure 10 pumps 1 volume of hydrogen peroxide into the etching tank 20, and then pumps 5 volumes of sulfuric acid directly into the etching tank 20 through the sulfuric acid dosing pipe 40. In other embodiments, 5 volumes of sulfuric acid may be pumped into etching tank 20 through sulfuric acid dosing tube 40, followed by 1 volume of hydrogen peroxide pumped into etching tank 20 through hydrogen peroxide dosing structure 10. Alternatively, cleaning solution formed by 5 volumes of sulfuric acid and 1 volume of hydrogen peroxide can be pumped directly into etching tank 20 through hydrogen peroxide dosing structure 10. The cleaning solution formed by mixing sulfuric acid and hydrogen peroxide can clean residues on the inner wall of the etching tank 20.
Referring to fig. 1, in one embodiment of the present utility model, when hydrogen peroxide (H 2 O 2 ) With sulfuric acid (H) 2 SO 4 ) After mixing, the reaction proceeds and unstable peroxomonosulfuric acid (H) 2 SO 5 ) With water (H) 2 O). Of course, hydrogen peroxide and sulfuric acid can also be produced in reverse from the peroxymonosulfuric acid and water. The equation for the reaction of hydrogen peroxide with sulfuric acid can be expressed as
The peroxymonosulfuric acid can also react and form unstable HO- (SO) 2 ) -O-OH, the equation of the reaction can be expressed +.>
HO-(SO 2 ) -O-OH can undergo cleavage and generate hydroxyl radicals (OH) and O (SO) 2 ) -OH radicals, the equation for the reaction may represent HO- (SO) 2 )-O-OH→(*OH)+*O(SO 2 ) -OH. At this time, hydrogen peroxide (H) 2 O 2 ) With sulfuric acid (H) 2 SO 4 ) To obtain OH reactive groups and O (SO 2 ) -OH reactive groups. * OH reactive groups with O (SO 2 ) the-OH reactive group can react with carbon polymer chains in the residue to finally generate carbon monoxide (CO) and carbon dioxide (CO) 2 ) Further, residues on the inner wall of the etching bath 20 can be cleaned.The reaction equation for cleaning residues may represent RH + O (SO 2 )-OH→R*+H 2 SO 4 ，R*+O*→CO+CO 2 Wherein R may represent alkyl and O may represent oxygen radicals.
Referring to fig. 1, in one embodiment of the present utility model, when cleaning residues on the inner wall of the etching tank 20 is required, the apparatus body may control the hydrogen peroxide dosing structure 10 to pump 1 volume of hydrogen peroxide (H) into the etching tank 20 2 O 2 ) The sulfuric acid dosing tube 40 was then controlled to pump 5 volumes of sulfuric acid (H) into the etching tank 20 2 SO 4 ) A cleaning solution mixed with hydrogen peroxide and sulfuric acid may be formed in the etching tank 20. The cleaning liquid may fill the etching tank 20 and partially flow into the circulation tank 31. At this time, the machine body can control the circulation structure 30 to start working and drive the cleaning liquid to circulate, and heat the cleaning liquid at the same time. After the circulation flow reaches the preset time, the cleaning solution in the etching tank 20 can be discharged, and water is pumped into the etching tank 20 through the hydrogen peroxide dosing structure 10 or the sulfuric acid dosing pipe 40 for water cleaning, which can be indicated as one-time cleaning. Wherein the preset time can be in the range of 2-4 h, and the cleaning times can be in the range of 2-4 times. For example, the preset time may be 2 hours, the preset time may be 3 hours, and the preset time may be 4 hours. The number of times of cleaning may be 2 times, 3 times, and 4 times.
Therefore, in the scheme, through the new hydrogen peroxide dosing structure, the sequence of adding hydrogen peroxide and sulfuric acid in the etching tank can be controlled, and the cleaning solution formed by the hydrogen peroxide and the sulfuric acid can sufficiently clean residues attached to the inner wall of the etching tank, and meanwhile, the residues suspended in the cleaning solution can be prevented from flowing back into the etching tank, so that the cleaning efficiency can be improved. The residue can not influence other subsequent wafers, can prevent the residue from influencing the quality of the wafers, can improve the quality of the wafers to a certain extent, and then can improve the running time of the semiconductor machine, and can improve the productivity of the semiconductor machine to a certain extent.
In the description of the present specification, the descriptions of the terms "present embodiment," "example," "specific example," and the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present utility model. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The embodiments of the utility model disclosed above are intended only to help illustrate the utility model. The examples are not intended to be exhaustive or to limit the utility model to the precise forms disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the utility model and the practical application, to thereby enable others skilled in the art to best understand and utilize the utility model. The utility model is limited only by the claims and the full scope and equivalents thereof.
Claims (10)
1. A cleaning device for an etching bath, comprising:
the hydrogen peroxide dosing structure is communicated with the etching groove;
the sulfuric acid dosing tube is communicated with the etching groove;
the circulation structure, circulation structure with etching groove intercommunication, circulation structure includes:
the circulating groove is arranged at the periphery of the etching groove;
the circulating pipe is communicated between the circulating groove and the etching groove; and
and the circulating pump is arranged on the circulating pipe.
2. The apparatus according to claim 1, wherein the level of the upper surface of the circulation tank is expressed as a first level, the level of the upper surface of the etching tank is expressed as a second level, and the first level is greater than the second level.
3. The apparatus according to claim 1, wherein one end of the circulation pipe is communicated with a bottom of the circulation tank, and the other end of the circulation pipe is communicated with a bottom side of the etching tank.
4. The etching bath cleaning apparatus according to claim 1, wherein the circulation structure further comprises a heater provided on the circulation pipe.
5. The etching bath cleaning apparatus according to claim 4, wherein the circulation structure further comprises a filter provided on the circulation pipe.
6. The etching bath cleaning apparatus according to claim 5, wherein the circulation pump, the heater, and the filter are provided in this order on the circulation pipe.
7. The etching bath cleaning apparatus of claim 1, wherein the hydrogen peroxide dosing structure comprises:
a dosing box; and
and the medicine outlet pipe is communicated between the medicine adding box and the etching groove.
8. The etched tank cleaning apparatus according to claim 7, wherein the hydrogen peroxide dosing structure further comprises a dosing tube, the dosing tube being in communication with the dosing tank.
9. The etched tank cleaning apparatus according to claim 7, wherein the hydrogen peroxide dosing structure further comprises a dosing pump, the dosing pump being disposed on the outlet tube.
10. A semiconductor tool, comprising:
a machine body;
the etching groove is arranged on the machine body;
the cleaning device is arranged on one side of the etching groove, and comprises:
the hydrogen peroxide dosing structure is communicated with the etching groove;
the sulfuric acid dosing tube is communicated with the etching groove;
the circulation structure, circulation structure with etching groove intercommunication, circulation structure includes:
the circulating groove is arranged at the periphery of the etching groove;
the circulating pipe is communicated between the circulating groove and the etching groove; and
and the circulating pump is arranged on the circulating pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320590800.8U CN219267612U (en) | 2023-03-23 | 2023-03-23 | Cleaning device for etching groove and semiconductor machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320590800.8U CN219267612U (en) | 2023-03-23 | 2023-03-23 | Cleaning device for etching groove and semiconductor machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219267612U true CN219267612U (en) | 2023-06-27 |
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ID=86853929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320590800.8U Active CN219267612U (en) | 2023-03-23 | 2023-03-23 | Cleaning device for etching groove and semiconductor machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219267612U (en) |
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2023
- 2023-03-23 CN CN202320590800.8U patent/CN219267612U/en active Active
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