CN218956845U - Large-channel wavelength division multiplexer - Google Patents
Large-channel wavelength division multiplexer Download PDFInfo
- Publication number
- CN218956845U CN218956845U CN202222202729.XU CN202222202729U CN218956845U CN 218956845 U CN218956845 U CN 218956845U CN 202222202729 U CN202222202729 U CN 202222202729U CN 218956845 U CN218956845 U CN 218956845U
- Authority
- CN
- China
- Prior art keywords
- waveguide
- output
- input
- straight
- micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000008878 coupling Effects 0.000 claims description 18
- 238000010168 coupling process Methods 0.000 claims description 18
- 238000005859 coupling reaction Methods 0.000 claims description 18
- 230000003595 spectral effect Effects 0.000 claims description 8
- 238000005253 cladding Methods 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 238000005530 etching Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Landscapes
- Optical Integrated Circuits (AREA)
Abstract
The utility model relates to a large channel wavelength division multiplexer, which comprises a substrate of a wafer, an oxygen-buried layer of the wafer, a device layer and SiO of a device from bottom to top 2 The device layer is respectively a micro-ring resonator, a phase shifter, a transmission waveguide and an array waveguide grating, the phase shifter is loaded on the micro-ring, and the micro-ring resonator is connected with the upper array waveguide grating and the lower array waveguide grating through the transmission waveguide. The utility model cascades two waveguide array gratings with staggered output channel wave peaks through the micro-ring resonator, and the resonance wave peaks and the lower array at the micro-ring straight-through endThe output wave peaks of all channels of the column waveguide grating are correspondingly overlapped, the resonance wave peak of the downloading end of the micro-ring resonator is correspondingly overlapped with the output wave peak of all channels of the upper array waveguide grating, and the output wave peaks of the upper array waveguide grating and the lower array waveguide grating are staggered, so that a large-channel wavelength division multiplexer with staggered channels is formed, the problem that the number of wavelength channels of the conventional wavelength division multiplexer is less is solved, and the low-crosstalk aspect is good.
Description
Technical Field
The utility model relates to a large-channel wavelength division multiplexer, belonging to the technical field of semiconductor optical signal transmission.
Background
The optical fiber communication is a communication mode which takes light waves as a carrier and optical fibers as a transmission medium, and has the advantages of bearing more than 90% of global communication data capacity, having wavelength division multiplexing technology and high-speed and large-capacity transmission capacity, greatly promoting the development of optical fiber communication industry by the technical progress thereof, and bringing revolutionary change to the transmission technology. The silicon photon device based on the material has extremely small size and low cost, the preparation process is completely compatible with the COMS process and can realize monolithic integration with an IC circuit, and the silicon photon device based on the material becomes one of hot spots in the field of optical fiber communication research by virtue of the unique advantage. Currently, wavelength division multiplexers in Silicon photons mainly have four structures, namely etched gratings (EDGs), micro-Ring resonators (MRRs), cascaded MZI and arrayed waveguide gratings (Silicon arrayed waveguide grating, silicon AWG). The etched grating is suitable for coarse division multiplexing, dense wavelength division multiplexing cannot be realized, and the application range is limited to a certain extent: the micro-ring resonant filter realizes demultiplexing by cascading micro-rings with different radiuses and utilizing resonant wavelengths, is influenced by a process, is difficult to control a stable wavelength interval, and needs to be added with a tuning system, so that a plurality of tuning systems can cause larger additional power consumption; the MZI realizes the wavelength division multiplexing through the arm length difference, when the number of channels is increased, the cascade frequency is also increased, and the chip size is increased, so that the integration is not facilitated. For the above reasons, these three silicon photonic devices are not widely used in the field of wavelength division multiplexing. The silicon photon array waveguide grating is a wavelength division multiplexing/demultiplexing device with the most excellent comprehensive performance, since the AWG is generated, the AWG is combined with MRR and MZI is more compact than the one, and has lower insertion loss and better crosstalk performance, and is thus being studied extensively. A 16 channel AWG based on silicon nitride has been reported to be able to achieve-30 dB of adjacent channel crosstalk at a loss of 0.5 dB. But the footprint of the entire device exceeds 1 square centimeter due to the low index difference. On the basis of the high refractive index contrast characteristic of silicon, a silicon-based light-emitting diode with the occupied area of 400 multiplied by 600 mu m is designed 2 Is provided for a compact AWG. However, the crosstalk of adjacent channels is sufficient to be 10 db. In addition, some novel designs, such as folding structures, have been proposed. For example, adding reflectors to the array waveguide forms a 4-channel folded AWG with crosstalk and insertion loss of about-20 dB and 3.5dB, respectively, and the results are not very ideal. Thus, how to implement a multi-channel high performance AWG in a compact footprint remains a challenge.
Disclosure of Invention
Aiming at the problems and the defects existing in the prior art, the utility model provides a large-channel wavelength division multiplexer, which can solve the problems of large crosstalk of the large-channel wavelength division multiplexer and fewer wavelength channels of the conventional wavelength division multiplexer.
The technical scheme of the utility model is as follows: a large channel wavelength division multiplexer comprises a substrate of a wafer, an oxygen-buried layer of the wafer, a device layer and SiO of the device from bottom to top 2 An upper cladding layer, the device layer including a microring resonator 110, a phase shifter 120, a download end waveguide 130, a through end waveguide 140, an upper arrayed waveguide grating 150, and a lower arrayed waveguide grating 160; the phase shifter 120 is loaded on the micro-ring resonator (110), the download end of the micro-ring resonator 110 is connected with the upper array waveguide grating (150) through the download end waveguide 130, and the through end of the micro-ring resonator (110) is connected with the lower array waveguide grating 160 through the through end waveguide 140.
As a further aspect of the present utility model, the micro-ring resonator 110 includes an output straight waveguide 111, a ring resonator 112, and an input straight waveguide 113; the first coupling region 5 exists between the output straight waveguide 111 and the ring resonator 112 positioned at the lower part of the output straight waveguide 111, the second coupling region 6 exists between the input straight waveguide 113 and the ring resonator 112 positioned at the upper part of the input straight waveguide 113, and the phase shifter 120 is a device connected with a power supply to adjust the micro-ring resonant wavelength and acts on the ring resonator 112.
As a further aspect of the present utility model, the output straight waveguide 111 is divided into an output straight waveguide download end 1 and an output straight waveguide output end 2, and the input straight waveguide 113 is divided into an input straight waveguide input end 3 and an input straight waveguide through end 4.
As a further aspect of the present utility model, the download end waveguide 130 includes a semicircular curved waveguide and a straight waveguide, and the output straight waveguide download end 1 is connected to the upper input waveguide 8 of the upper arrayed waveguide grating 150 through the download end waveguide 130.
As a further aspect of the present utility model, the through-end waveguide 140 includes an S-shaped curved waveguide and a straight waveguide, and the input straight waveguide through-end 4 of the micro ring resonator 110 is connected to the lower input waveguide 13 of the lower arrayed waveguide grating 160 through the through-end waveguide 140.
As a further aspect of the present utility model, the upper arrayed waveguide grating 150 includes an upper input waveguide 8, an upper input slab waveguide 9, an upper arrayed waveguide 10, an upper output slab waveguide 11, and an upper output waveguide 12; the upper input waveguide 8 is connected with an upper input slab waveguide 9; the upper input slab waveguide 9 is connected with the upper output slab waveguide 11 through the upper array waveguide 10, the upper input slab waveguide 9, the upper array waveguide 10 and the upper output slab waveguide 11 form a Roland circle structure, and the upper output slab waveguide 11 is connected with the upper output waveguide 12.
As a further aspect of the present utility model, the lower arrayed waveguide grating 160 includes a lower input waveguide 13, a lower input slab waveguide 14, a lower arrayed waveguide 15, a lower output slab waveguide 16 and a lower output waveguide 17; the lower input waveguide 13 is connected with a lower input slab waveguide 14; the lower input slab waveguide 14 is connected with the lower output slab waveguide 16 through the lower array waveguide 15, the lower input slab waveguide 14, the lower array waveguide 15 and the lower output slab waveguide 16 form a rowland circle structure, and the lower output slab waveguide 16 is connected with the lower output waveguide 17.
As a further aspect of the present utility model, the free spectral range FSR of the microring resonator 110 is equal to the channel spacing of the upper arrayed waveguide grating 150 and also equal to the channel spacing of the lower arrayed waveguide grating 160.
As a further aspect of the present utility model, there is a difference in center wavelength of Δλ between the center wavelengths of the upper and lower arrayed waveguide gratings 150 and 160, and the free spectral range FSR of the micro-ring resonator 110 is equal to 2 Δλ, where Δλ represents the channel spacing of the upper arrayed waveguide grating 150, and the channel spacing of the lower arrayed waveguide grating 160 is also Δλ.
As a further aspect of the present utility model, the resonance peak at the download end of the micro-ring resonator 110 coincides with the peak wavelength of each channel of the upper arrayed waveguide grating 150, and the resonance peak at the through end of the micro-ring resonator 110 coincides with the peak wavelength of each channel of the lower arrayed waveguide grating 160.
The working principle of the utility model is as follows: the refractive index of the waveguide of the micro-ring resonator filter is changed by using the thermo-optical/electro-optical effect through the modulation action of the phase shifter 120 loaded on the micro-ring resonator 110, so that the resonant center wavelength of the micro-ring resonator 110 is adjusted, the resonant peak at the download end of the micro-ring is matched with the output peak of the upper array waveguide grating 150 (AWG) (see fig. 5), and the resonant peak at the through end of the micro-ring is coincident with the output peak of the lower array waveguide grating 160 (AWG) (see fig. 6). In an actual working environment, an optical signal is input from a straight waveguide under the micro-ring, a part of light is coupled into the ring resonant cavity 112 through the straight waveguide, after passing through a path of half a perimeter, a wavelength signal generating resonance action is coupled into the output straight waveguide 111 from the first coupling region 5 of the micro-ring resonator, is output from a downloading end of the output straight waveguide, passes through a section of bent waveguide, and enters the upper array waveguide grating 150. The other part of light is coupled into the ring resonator 112 through the straight waveguide, then phase change is generated through a path with a circumference, the light signal coupled into the input straight waveguide 113 by the second coupling area 6 of the micro-ring resonator interferes with the light signal of the original input straight waveguide, the interfered light signal is output from the input straight waveguide straight end 4, and enters the lower array waveguide grating 160 through a section of bent waveguide. The array waveguide grating AWG consists of strip-shaped waveguides and array waveguides, and as the length of the array waveguides in the array waveguide grating AWG increases linearly, the phase change caused by wavelength change changes linearly along the output aperture. Accordingly, the focal point of the light moves along the output surface of the second slab waveguide. By placing the output waveguides at appropriate positions, the spatial separation of different wavelength channels can be obtained, in the present utility model, the positions of the output waveguides of the upper and lower array waveguide gratings AWG are staggered, the micro-ring resonator 110 plays roles of filtering and splitting, the resonance peak output from the download end of the micro-ring resonator 110 coincides with each channel peak of the upper array waveguide grating 150, the resonance peak output from the through end of the micro-ring resonator 110 coincides with each channel peak of the lower array waveguide grating 160, the resonance peaks of the two array waveguide gratings after being overlapped by the micro-ring resonator 110 are staggered on the spectrogram, as shown in fig. 7, and the free spectral range FSR of the staggered array waveguide gratings is greater than n·Δλ, compared with the conventional array waveguide gratings AWG, the doubling of the channel number can be realized, and the present utility model is a novel large-channel wavelength division multiplexer.
The beneficial effects of the utility model are as follows: the utility model concatenates two waveguide array gratings with staggered output channel wave peaks through the micro-ring resonator, the resonance wave peak of the micro-ring direct-current end and each channel output wave peak of the lower Array Waveguide Grating (AWG) are correspondingly overlapped, the resonance wave peak of the micro-ring resonator downloading end and each channel output wave peak of the upper Array Waveguide Grating (AWG) are correspondingly overlapped, and the output wave peaks of the upper Array Waveguide Grating (AWG) and the lower Array Waveguide Grating (AWG) are staggered, thereby forming a large-channel wavelength division multiplexer of a staggered channel. The method is a new large-channel wavelength division multiplexing scheme, solves the problem of less wavelength channels of the conventional wavelength division multiplexer, and has good performance in the aspect of low crosstalk.
Drawings
FIG. 1 is a schematic diagram of a large channel WDM connection in accordance with the present utility model;
FIG. 2 is a schematic diagram of a micro-ring resonator according to the present utility model;
FIG. 3 is a schematic diagram of an upper array waveguide grating structure of the present utility model;
FIG. 4 is a schematic diagram of a lower array waveguide grating structure according to the present utility model;
FIG. 5 is a graph of matching of the resonance peak at the download end of the micro-ring and the peak of the upper array waveguide grating channel of the present utility model;
FIG. 6 is a graph of the matching of the resonance peak at the straight-through end of the micro-ring and the peak of the channel of the lower array waveguide grating;
FIG. 7 is a graph showing the staggering of the peaks of the output channels of the upper and lower arrayed waveguide gratings of the present utility model.
The reference numerals in the drawings: 1-output straight waveguide downloading end, 2-output straight waveguide outputting end, 3-input straight waveguide inputting end, 4-input straight waveguide straight end, 5-first coupling area, 6-second coupling area, 8-upper input waveguide, 9-upper input flat waveguide, 10-upper array waveguide, 11-upper output flat waveguide, 12-upper output waveguide, 13-lower input waveguide, 14-lower input flat waveguide, 15-lower array waveguide, 16-lower output flat waveguide, 17-lower output waveguide, 110-micro-ring resonator, 120-phase shifter, 130-downloading end waveguide, 140-straight end waveguide, 150-upper array waveguide grating, 160-lower array waveguide grating, 111-output straight waveguide, 112-annular resonant cavity, 113-input straight waveguide.
Detailed Description
The utility model will be further described with reference to the drawings and the specific examples.
Example 1: as shown in fig. 1-7, a large channel wavelength division multiplexer comprises, from bottom to top, a substrate of a wafer, an oxygen-buried layer of the wafer, a device layer, and SiO of the device 2 The upper cladding layer is made of monocrystalline silicon, and the device layer comprises a micro-ring resonator 110, a phase shifter 120, a downloading end waveguide 130, a through end waveguide 140, an upper array waveguide grating 150 and a lower array waveguide grating 160; the phase shifter 120 is loaded on the micro-ring resonator (110), the download end of the micro-ring resonator 110 is connected with the upper array waveguide grating (150) through the download end waveguide 130, and the through end of the micro-ring resonator (110) is connected with the lower array waveguide grating 160 through the through end waveguide 140.
Wherein the micro-ring resonator 110 comprises an output straight waveguide 111, a ring resonator 112, and an input straight waveguide 113; the output straight waveguide 111 is divided into an output straight waveguide downloading end 1 and an output straight waveguide outputting end 2, and the input straight waveguide 113 is divided into an input straight waveguide inputting end 3 and an input straight waveguide communicating end 4. The first coupling region 5 exists between the output straight waveguide 111 and the ring resonator 112 positioned at the lower part of the output straight waveguide 111, the second coupling region 6 exists between the input straight waveguide 113 and the ring resonator 112 positioned at the upper part of the input straight waveguide 113, and the phase shifter 120 is a device connected with a power supply to adjust the micro-ring resonant wavelength and acts on the ring resonator 112.
The download end waveguide 130 comprises a semicircular curved waveguide and a straight waveguide, and the output straight waveguide download end 1 is connected with the upper input waveguide 8 of the upper arrayed waveguide grating 150 through the download end waveguide 130. The straight-through end waveguide 140 includes an S-shaped curved waveguide and a straight waveguide, and the input straight waveguide straight-through end 4 of the micro-ring resonator 110 is connected to the lower input waveguide 13 of the lower arrayed waveguide grating 160 through the straight-through end waveguide 140. The upper arrayed waveguide grating 150 comprises an upper input waveguide 8, an upper input slab waveguide 9, an upper arrayed waveguide 10, an upper output slab waveguide 11 and an upper output waveguide 12; the upper input waveguide 8 is connected with an upper input slab waveguide 9; the upper input slab waveguide 9 is connected with the upper output slab waveguide 11 through the upper array waveguide 10, the upper input slab waveguide 9, the upper array waveguide 10 and the upper output slab waveguide 11 form a Roland circle structure, and the upper output slab waveguide 11 is connected with the upper output waveguide 12. The lower arrayed waveguide grating 160 includes a lower input waveguide 13, a lower input slab waveguide 14, a lower arrayed waveguide 15, a lower output slab waveguide 16 and a lower output waveguide 17; the lower input waveguide 13 is connected with a lower input slab waveguide 14; the lower input slab waveguide 14 is connected with the lower output slab waveguide 16 through the lower array waveguide 15, the lower input slab waveguide 14, the lower array waveguide 15 and the lower output slab waveguide 16 form a rowland circle structure, and the lower output slab waveguide 16 is connected with the lower output waveguide 17. The free spectral range FSR of the microring resonator 110 is equal to the channel spacing Δλ of the upper arrayed waveguide grating 150 and also equal to the channel spacing Δλ of the lower arrayed waveguide grating 160. The center wavelengths of the upper arrayed waveguide grating 150 and the lower arrayed waveguide grating 160 have a center wavelength difference of Δλ, and the free spectral range FSR of the micro-ring resonator 110 is equal to 2 Δλ. The resonance peak at the download end of the micro-ring resonator 110 coincides with the peak wavelength of each channel of the upper arrayed waveguide grating 150, and the resonance peak at the through end of the micro-ring resonator 110 coincides with the peak wavelength of each channel of the lower arrayed waveguide grating 160.
A beam of optical signals with different wavelengths is input from a micro-ring input straight waveguide input end 3, a part of light is coupled into a ring resonant cavity through a straight waveguide, an electro-optic phase shifter is loaded on the resonant cavity, the refractive index of the waveguide of a bending waveguide of a micro-ring resonant filter is changed through voltage applied to the electro-optic phase shifter, and therefore the resonance center wavelength of the micro-ring resonator is adjusted, the resonance wave crest of a micro-ring downloading end is matched with the output wave crest of an upper Array Waveguide Grating (AWG) (shown in figure 5), and meanwhile the resonance wave crest of the micro-ring straight-through end coincides with the output wave crest of a lower Array Waveguide Grating (AWG) (shown in figure 6). The optical signal coupled into the resonant cavity through the second coupling region 6 of the micro-ring resonator is coupled into the output straight waveguide 111 from the first coupling region 5 of the micro-ring resonator after passing through a path of half a circumference, and then enters the upper array waveguide grating (150) after passing through a section of curved waveguide. After the other part of light is coupled into the ring resonant cavity through the second coupling area 6 of the micro-ring resonator, the phase change is generated after the other part of light passes through a path with a circumference, the light is coupled into the input straight waveguide (113) through the second coupling area 6 of the micro-ring resonator to interfere with the light signal of the original input straight waveguide, the interfered light signal is output from the input straight waveguide straight end 4 and enters the lower array waveguide grating (160) through a section of bent waveguide. The final output spectrum of two 16-channel arrayed waveguide gratings cascaded through the microring resonator is shown in fig. 7.
The microring resonator 110, the download end waveguide 130, the pass-through end waveguide 140, the upper arrayed waveguide grating 150, and the lower arrayed waveguide grating 160 are all on the same top-level silicon of the SOI wafer. The SOI wafer was 8 inches in size, the wafer thickness was 725 μm, the buried oxide layer thickness was 2 μm, and the top silicon thickness was 220nm. The array waveguides 10 of the upper array waveguide grating 150 and the lower array waveguide grating 160 are ridge waveguides having a width of 450nm and an etching depth of 100nm, the length difference of the upper array waveguide 10 is 12.95 μm, the radius of the rowland circle is 89.3 μm, the minimum full radius is 50 μm, the diffraction order is 20, and the channel interval is 6nm. The download end waveguide 130 and the through end waveguide 140 are ridge waveguides having a width of 450nm and a height of 200 nm. The input/output waveguides of the microring resonator 110 are stripe-shaped waveguides having a width of 450nm, the ring resonator 112 and the coupling regions (the first coupling region 5 and the second coupling region 6) are ridge-shaped waveguides having a width of 450nm and an etching depth of 100nm, the minimum distance between the input/output waveguides and the ring resonator is 200nm, the diameter of the ring resonator is 23 μm, and the free spectral range FSR is 6nm.
The waveguide structure of the device of the present utility model is fabricated on an SOI wafer by multiple photolithography/etching semiconductor processes, after waveguide formation, si0 with a thickness of 1.5 μm is deposited by PECVD process 2 The upper cladding layer is subjected to reverse etching and polishing to obtain a flat and smooth surface, a layer of 110nm thick high-resistance material TiN is deposited on the smooth surface by a PVD technology, a TiN heating electrode is formed by photoetching/etching, the TiN heating electrode is of a foldback distribution structure with the width of 5 mu m and the total length of 200 mu m, and a PECVD technology is adopted to deposit Si0 with the thickness of 450nm above the TiN electrode material 2 An isolation layer; forming a heating electrode lead hole above the TiN electrode by a photoetching/etching technology, wherein the lead hole is etched and stopped on the TiN heating electrode; finally, a PMI technology is adopted to deposit a metal lead material Al with the thickness of 2 mu m, the Al material is connected with a TiN heating electrode, an Al metal lead with the width of 10 mu m is formed through a photoetching/etching technology, and a terminal structure of the Al metal lead and a detection contact is square with the side length of 70 mu m.
Example 2, a large channel wavelength division multiplexer, this example differs from the SOI substrate-based single crystal silicon waveguide in the device layer of example 1, in which Si is used in the device layer of example 2 3 N 4 Waveguides, other structures unchanged, si 3 N 4 The waveguide has lower loss and higher process tolerance than single crystal silicon waveguides and is fabricated as follows.
Step one: taking a pure silicon wafer, cleaning, thermally oxidizing to obtain an oxygen buried layer, and chemically polishing the obtained surface by utilizing a CMP technology to obtain a smooth surface;
step two: depositing a silicon nitride layer on the oxygen buried layer manufactured in the first step by using an LPCVD technology, polishing, then carrying out photoetching, wherein the photoetching comprises spin coating, exposure, development, drying, etching, and finally photoresist stripping and cleaning to obtain a complete ridge structure and a strip waveguide structure, and completing a micro-ring resonator, an array waveguide grating and a transmission waveguide structure;
step three: after cleaning, depositing SiO on the upper layer of the Si waveguide by adopting a PECVD method 2 And (3) cladding. To obtain a smooth upper surface, CMP chemical mechanical polishing is used to obtain a smooth upper surface;
step four: removing photoresist, cleaning, and depositing SiO by PECVD method 2 And depositing a layer by adopting a PVD method to obtain the TiN electrode layer. Obtaining a heated electrode TiN through photoetching and TiN etching;
step five: photoresist stripping, cleaning, and depositing upper cladding SiO 2 Then, photoetching and etching to obtain a metal lead hole;
step six: removing photoresist, cleaning, adopting a PVD method to deposit an Al metal layer, photoetching and etching to obtain a metal Al lead, wherein the metal Al is communicated with the heating electrode TiN;
step seven: photoresist removing and cleaning are carried out, and then photoetching and deep etching are carried out to obtain the heat insulation groove. Finally, deep etching is carried out to obtain the deep etching groove for the optical fiber coupling test. And finishing the process processing of the chip.
The specific embodiments of the present utility model have been described in detail with reference to the accompanying drawings, but the present utility model is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the spirit of the present utility model.
Claims (10)
1. A large channel wavelength division multiplexer comprises a substrate of a wafer, an oxygen-buried layer of the wafer, a device layer and SiO of the device from bottom to top 2 The upper cladding, its characterized in that: the device layer comprises a micro-ring resonator (110), a phase shifter (120), a download end waveguide (130), a through end waveguide (140), an upper array waveguide grating (150) and a lower array waveguide grating (160); the phase shifter (120) is loaded on the micro-ring resonator (110), the downloading end of the micro-ring resonator (110) is connected with the upper array waveguide grating (150) through the downloading end waveguide (130), and the through end of the micro-ring resonator (110) is connected with the lower array waveguide grating (160) through the through end waveguide (140).
2. The large channel wavelength division multiplexer of claim 1 wherein: the micro-ring resonator (110) comprises an output straight waveguide (111), a ring resonant cavity (112) and an input straight waveguide (113); a first coupling area (5) exists between the output straight waveguide (111) and a ring resonant cavity (112) positioned at the lower part of the output straight waveguide (111), a second coupling area (6) exists between the input straight waveguide (113) and the ring resonant cavity (112) positioned at the upper part of the input straight waveguide (113), and the phase shifter (120) is a device connected with a power supply and used for adjusting the micro-ring resonant wavelength and acts on the ring resonant cavity (112).
3. The large channel wavelength division multiplexer of claim 2 wherein: the output straight waveguide (111) is divided into an output straight waveguide downloading end (1) and an output straight waveguide outputting end (2), and the input straight waveguide (113) is divided into an input straight waveguide inputting end (3) and an input straight waveguide communicating end (4).
4. The large channel wavelength division multiplexer of claim 1 wherein: the downloading end waveguide (130) comprises a semicircular bent waveguide and a straight waveguide, and the output straight waveguide downloading end (1) is connected with the upper input waveguide (8) of the upper array waveguide grating (150) through the downloading end waveguide (130).
5. The large channel wavelength division multiplexer of claim 1 wherein: the straight-through end waveguide (140) comprises an S-shaped bent waveguide and a straight waveguide, and the input straight waveguide straight-through end (4) of the micro-ring resonator (110) is connected with the lower input waveguide (13) of the lower array waveguide grating (160) through the straight-through end waveguide (140).
6. The large channel wavelength division multiplexer of claim 1 wherein: the upper array waveguide grating (150) comprises an upper input waveguide (8), an upper input slab waveguide (9), an upper array waveguide (10), an upper output slab waveguide (11) and an upper output waveguide (12); the upper input waveguide (8) is connected with the upper input slab waveguide (9); the upper input flat waveguide (9) is connected with the upper output flat waveguide (11) through the upper array waveguide (10), the upper input flat waveguide (9), the upper array waveguide (10) and the upper output flat waveguide (11) form a Roland circle structure, and the upper output flat waveguide (11) is connected with the upper output waveguide (12).
7. The large channel wavelength division multiplexer of claim 1 wherein: the lower array waveguide grating (160) comprises a lower input waveguide (13), a lower input slab waveguide (14), a lower array waveguide (15), a lower output slab waveguide (16) and a lower output waveguide (17); the lower input waveguide (13) is connected with the lower input slab waveguide (14); the lower input flat waveguide (14) is connected with the lower output flat waveguide (16) through the lower array waveguide (15), the lower input flat waveguide (14), the lower array waveguide (15) and the lower output flat waveguide (16) form a Roland circle structure, and the lower output flat waveguide (16) is connected with the lower output waveguide (17).
8. The large channel wavelength division multiplexer of claim 1 wherein: the free spectral range FSR of the microring resonator (110) is equal to the channel spacing of the upper arrayed waveguide grating (150) and also equal to the channel spacing of the lower arrayed waveguide grating (160).
9. The large channel wavelength division multiplexer of claim 1 wherein: the center wavelengths of the upper array waveguide grating (150) and the lower array waveguide grating (160) have a center wavelength difference of Deltalambda, and the free spectral range FSR of the micro-ring resonator (110) is equal to 2 Deltalambda, wherein Deltalambda represents the channel interval of the upper array waveguide grating (150), and the channel interval of the lower array waveguide grating (160) is also Deltalambda.
10. The large channel wavelength division multiplexer of claim 1 wherein: the resonance wave crest of the downloading end of the micro-ring resonator (110) coincides with the peak wavelength of each channel of the upper array waveguide grating (150), and the resonance wave crest of the through end of the micro-ring resonator (110) coincides with the peak wavelength of each channel of the lower array waveguide grating (160).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202222202729.XU CN218956845U (en) | 2022-08-22 | 2022-08-22 | Large-channel wavelength division multiplexer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202222202729.XU CN218956845U (en) | 2022-08-22 | 2022-08-22 | Large-channel wavelength division multiplexer |
Publications (1)
Publication Number | Publication Date |
---|---|
CN218956845U true CN218956845U (en) | 2023-05-02 |
Family
ID=86134474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202222202729.XU Active CN218956845U (en) | 2022-08-22 | 2022-08-22 | Large-channel wavelength division multiplexer |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN218956845U (en) |
-
2022
- 2022-08-22 CN CN202222202729.XU patent/CN218956845U/en active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100686920B1 (en) | Photonic devices comprising thermo-optic polymer | |
KR100299662B1 (en) | Thermo-optical variable wavelength filter manufacturing method | |
US20020172464A1 (en) | Optical waveguide circuit including passive optical waveguide device combined with active optical waveguide device, and method for making same | |
US20030003735A1 (en) | Optical waveguide circuit including multiple passive optical waveguide devices, and method of making same | |
CN108445586B (en) | Band-pass filter irrelevant to polarization based on silicon-based waveguide grating | |
CN101666907B (en) | Static-driven tunable optical filter based on optical waveguide and F-P cavity and manufacturing method thereof | |
CN113937617B (en) | Multi-wavelength laser | |
CN112230339A (en) | Grating coupler and preparation method thereof | |
WO2022062676A1 (en) | Wavelength division multiplexer/demultiplexer, photonic integrated chip, and optical module | |
CA2725883A1 (en) | Integrated optical waveguide device comprising a polysilicon layer-based passive optical waveguide device in combination with an active optical waveguide device, and method for making same | |
CN109991700A (en) | A kind of arrayed waveguide grating multiplexer that micro-loop is integrated | |
US6856732B2 (en) | Method and apparatus for adding/droping optical signals in a semiconductor substrate | |
CN218956845U (en) | Large-channel wavelength division multiplexer | |
CN115236799B (en) | Grating type lithium niobate optical filter with transverse amplitude apodization | |
CN115390184A (en) | Large channel wavelength division multiplexer based on staggered structure | |
CN115079339B (en) | Wavelength division multiplexing filter comprising auxiliary coupling region | |
CN211348702U (en) | Micro-ring integrated arrayed waveguide grating wavelength division multiplexer | |
KR102522956B1 (en) | Polymeric waveguide Bragg reflecting tunable wavelength filters | |
CN116256905A (en) | Nano Liang Qiangguang filter based on electric tuning | |
WO2002079863A2 (en) | Optoelectronic filters | |
US5050947A (en) | Optical waveguide control device employing directional coupler on substrate | |
Oguma et al. | Compactly folded waveguide-type interleave filter with stabilized couplers | |
CN114755759A (en) | Ultra-compact arrayed waveguide grating wavelength division multiplexer based on sub-wavelength grating | |
CN219625746U (en) | Polarization independent wavelength division multiplexer | |
CN219657906U (en) | Wavelength division multiplexer of multimode interference waveguide assisted by annular reflector |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |