CN218584668U - Semiconductor wafer detection system - Google Patents
Semiconductor wafer detection system Download PDFInfo
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- CN218584668U CN218584668U CN202123066993.7U CN202123066993U CN218584668U CN 218584668 U CN218584668 U CN 218584668U CN 202123066993 U CN202123066993 U CN 202123066993U CN 218584668 U CN218584668 U CN 218584668U
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Abstract
The utility model discloses a semiconductor wafer detection system, the detection system includes main light path passageway and vice light path passageway, wherein, main light path passageway includes main channel camera, main light path tube lens and spectroscope II, vice light path passageway includes vice passageway camera, vice light path tube lens and spectroscope III; the detection system also comprises a light source, a collimation system, a spectroscope I, an objective lens and an active gathering device; light emitted from a light source is changed into collimated light beams through a collimation system, the collimated light beams pass through an objective lens to reach an object to be detected after being reflected by a spectroscope I, the collimated light beams pass through the spectroscope I after being reflected by the object to be detected, the collimated light beams pass through the spectroscope I along the objective lens, one path of light passes through a beam splitter II and a main light path tube mirror and then reaches a linear array camera, the other path of light passes through the spectroscope II and then reaches a spectroscope III and is divided into two light paths by the spectroscope III again, one path of light passes through the spectroscope III and reaches an active focusing device, and the other path of light passes through a secondary light path tube mirror and then reaches an area array camera. The utility model discloses semiconductor wafer detecting system has two way passageways of major-minor, can observe whole and detail simultaneously, and the minor passageway is used for observing whole, and the main entrance is used for observing detail to convenient contrast; in addition, the main channel has four tube mirrors of different magnifications, which can be manually switched to provide different fields of view to observe details of different magnifications.
Description
Technical Field
The utility model relates to a semiconductor wafer detecting system.
Background
With the rapid development of semiconductor processing and manufacturing technology, the importance of wafer defect detection has been widely recognized. If the initial silicon wafer is not inspected for defects or defects are not inspected, the products applied to the silicon wafer later will have defects, which are so small as to affect daily use, so large as to affect industrial production, and the like.
At present, in conventional wafer detection, objects to be detected with different fields of view, different positions and different sizes are detected by switching different objective lenses. As is known, the objective lens is relatively expensive, and the cost of the whole detection system is high due to the need of equipping several objective lenses with different magnifications.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: the utility model aims at providing a through the tube mirror that switches different multiplying powers, replace the objective of different multiplying powers, realize the semiconductor wafer detecting system of same function on the basis of finished product skew.
The technical scheme is as follows: the utility model discloses a semiconductor wafer detecting system, detecting system includes main light path passageway and vice light path passageway, wherein, main light path passageway includes main channel camera, main light path tube lens and spectroscope II, vice light path passageway includes vice passageway camera, vice light path tube lens and spectroscope III; the detection system also comprises a light source, a collimation system, a spectroscope I, an objective lens and an active gathering device; light emitted from a light source is changed into collimated light beams through a collimation system, is reflected by a spectroscope I, then passes through an objective lens to reach an object to be detected, is reflected by the object to be detected, then passes through the spectroscope I along the objective lens, one path of light passes through a beam splitter II and a main light path tube lens to reach a linear array camera, the other path of light passes through the spectroscope II to reach a spectroscope III after being reflected by the spectroscope II, is divided into two light paths by the spectroscope III again, one path of light passes through the spectroscope III to reach an active focusing device, and the other path of light passes through a secondary light path tube lens to reach an area array camera after being reflected by the spectroscope III.
The auxiliary channel camera is an area-array camera with a pixel size of 7 microns, can conveniently and visually acquire images, can reduce shooting times and improve testing speed, and is low in measuring precision; the main channel camera is a linear array camera with the pixel size of 2.4 microns, and the detection precision of the camera is high.
The automatic focusing system comprises a transverse plate and a vertical plate which are fixedly connected, wherein a Z-axis guide mechanism is arranged on the vertical plate, a shell of the detection system is fixed on a driving end of the Z-axis guide mechanism, the detection system is driven by the Z-axis guide mechanism to move up and down along the Z axis, a through hole is formed in the transverse plate, the objective lens is fixed in the through hole, and the focal plane of the detection system is adjusted through the Z-axis guide mechanism to coincide with the entrance pupil plane of the objective lens.
The active focusing device converts the received optical signal into a digital signal and transmits the digital signal to an external controller. The active focusing device is internally provided with a CMOS image sensor, an FPGA and a microprocessor which are integrated into a whole and used for rapid digital image processing, the distance and the focusing direction can be rapidly and accurately measured by projecting a laser line onto a sample and carrying out digital processing on the image, and then the information is directly output to the controller.
The main light path tube lens comprises tube lenses with four multiplying powers, the outer diameters of the tube lenses with the four multiplying powers are consistent, the tube lenses with the four multiplying powers are arranged in the same lens barrel, when the tube lenses need to be switched, the tube lenses are taken out from the bottom of the lens barrel and are changed into the tube lenses needing to be switched, and then the tube lenses are locked by the pressing ring.
Has the beneficial effects that: the utility model discloses semiconductor wafer detecting system has major-minor two way passageways, can survey whole and detail simultaneously, and the overall situation of measured object is surveyed to the minor channel, and the major channel is used for observing the detailed situation of measured object to convenient contrast; in addition, the main channel is provided with four tube lenses with different magnifications (focal lengths), and the four tube lenses can be manually switched, so that different fields of view are provided for observing details with different magnifications, and a clearer image plane is observed; the alignment focal length errors of the tube lenses with four multiplying powers are controlled within +/-0.005 mm, the confocal plane is guaranteed through arbitrary switching, and the operation is convenient.
Drawings
FIG. 1 is a schematic diagram of the optical path of the detection system of the present invention;
FIG. 2 is a schematic structural diagram I of the detection system of the present invention;
FIG. 3 is a schematic structural diagram II of the detection system of the present invention;
FIG. 4 is a schematic bottom view of the Z-axis autofocus system.
Detailed Description
As shown in fig. 1-4, the semiconductor wafer inspection system of the present invention, inspection system comprises a main light path channel and an auxiliary light path channel, wherein the main light path channel comprises a main channel camera 5, a main light path tube lens 6 and a spectroscope II7, and the auxiliary light path channel comprises an auxiliary channel camera 11, an auxiliary light path tube lens 11 and a spectroscope III3; the detection system also comprises a light source, a collimation system 2, a spectroscope I8, an objective lens and an active gathering device 1; light emitted from a light source is changed into collimated light beams through the collimating system 2, is reflected by the spectroscope I8, then passes through the objective lens to reach an object to be measured, is reflected by the object to be measured, then passes through the spectroscope I8 along the objective lens, one path of light passes through the beam splitter II7 and the main light path tube mirror 6 to reach the linear array camera 5, the other path of light passes through the spectroscope II7 to reach the spectroscope III3, is divided into two light paths by the spectroscope III3 again, one path of light passes through the spectroscope III3 to reach the active focusing device 1, and the other path of light passes through the spectroscope III3 to reach the area array camera 10 through the auxiliary light path tube mirror 11.
The auxiliary channel camera is an area array camera 10 with the pixel size of 7 microns, can conveniently and visually acquire images, can reduce the shooting times, improves the testing speed, and is low in measuring precision; the main channel camera is a linear array camera 5 with the pixel size of 2.4 microns, and the detection precision of the camera is high.
The utility model discloses still include Z axle automatic focusing system 9, Z axle automatic focusing system 9 includes fixed connection's diaphragm 9-1 and riser 9-2, wherein, be equipped with Z axle guiding mechanism 9-3 on riser 9-2, detecting system's shell 4 is fixed on the drive end of Z axle guiding mechanism 9-3, detecting system reciprocates along the Z axle under the drive of Z axle guiding mechanism 9-3, be equipped with through-hole 10 on diaphragm 9-1, objective fixes in through-hole 10, the focal plane through Z axle guiding mechanism 9-3 adjustment detecting system (collimation system) coincides with the entrance pupil face of objective. The Z-axis guide mechanism 9-3 controls the movement precision of the whole detection system frame except the objective lens within 0.005 mm.
The main light path tube lens 6 comprises tube lenses with four multiplying powers, the outer diameters of the tube lenses with the four multiplying powers are consistent, the tube lenses with the four multiplying powers are arranged in the same lens barrel, when the tube lenses need to be switched, the tube lenses are taken out from the bottom of the lens barrel and are changed into the tube lenses needing to be switched, and then the tube lenses are locked by the pressing rings.
Claims (5)
1. A semiconductor wafer inspection system, comprising: the detection system comprises a main light path channel and an auxiliary light path channel, wherein the main light path channel comprises a main channel camera, a main light path tube lens and a spectroscope II, and the auxiliary light path channel comprises an auxiliary channel camera, an auxiliary light path tube lens and a spectroscope III; the detection system also comprises a light source, a collimation system, a spectroscope I, an objective lens and an active gathering device; light emitted from a light source is changed into collimated light beams through a collimation system, is reflected by a spectroscope I, then passes through an objective lens to reach an object to be detected, is reflected by the object to be detected, then passes through the spectroscope I along the objective lens, one path of light passes through a beam splitter II and a main light path tube lens to reach a linear array camera, the other path of light passes through the spectroscope II to reach a spectroscope III after being reflected by the spectroscope II, is divided into two light paths by the spectroscope III again, one path of light passes through the spectroscope III to reach an active focusing device, and the other path of light passes through a secondary light path tube lens to reach an area array camera after being reflected by the spectroscope III.
2. The semiconductor wafer inspection system of claim 1, wherein: the auxiliary channel camera is an area-array camera with a pixel size of 7 microns; the main channel camera is a line camera with a pixel size of 2.4 microns.
3. The semiconductor wafer inspection system of claim 1, wherein: the automatic focusing system comprises a transverse plate and a vertical plate which are fixedly connected, wherein a Z-axis guide mechanism is arranged on the vertical plate, a shell of the detection system is fixed at the driving end of the Z-axis guide mechanism and driven by the Z-axis guide mechanism to move up and down along the Z axis, a through hole is formed in the transverse plate, the objective lens is fixed in the through hole, and the focal plane of the detection system is adjusted to coincide with the entrance pupil plane of the objective lens through the Z-axis guide mechanism.
4. The semiconductor wafer inspection system of claim 1, wherein: the active focusing device converts the received optical signal into a digital signal and transmits the digital signal to an external controller.
5. The semiconductor wafer inspection system of claim 1, wherein: the main light path tube lens comprises tube lenses with four multiplying powers, the outer diameters of the tube lenses with the four multiplying powers are consistent, and the parfocal distance error of each multiplying power tube lens is within +/-0.005 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123066993.7U CN218584668U (en) | 2021-12-08 | 2021-12-08 | Semiconductor wafer detection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123066993.7U CN218584668U (en) | 2021-12-08 | 2021-12-08 | Semiconductor wafer detection system |
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| Publication Number | Publication Date |
|---|---|
| CN218584668U true CN218584668U (en) | 2023-03-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202123066993.7U Active CN218584668U (en) | 2021-12-08 | 2021-12-08 | Semiconductor wafer detection system |
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| CN (1) | CN218584668U (en) |
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2021
- 2021-12-08 CN CN202123066993.7U patent/CN218584668U/en active Active
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