CN218561585U

CN218561585U - Heating device with argon gas diversion function

Info

Publication number: CN218561585U
Application number: CN202221682467.5U
Authority: CN
Inventors: 曹宇; 马丹; 王健
Original assignee: Core Material Core Suzhou Semiconductor Technology Co ltd
Current assignee: Core Material Core Suzhou Semiconductor Technology Co ltd
Priority date: 2022-06-30
Filing date: 2022-06-30
Publication date: 2023-03-03
Anticipated expiration: 2032-06-30

Abstract

The utility model discloses a heating device with argon gas diversion function, which is arranged in a process cavity of a sputtering platform and comprises a disk body, wherein a heating wire for heating, a thermocouple for measuring temperature and a cooling pipe for cooling are arranged in the disk body; the argon pipe is arranged in the tray body; the bottom plate of the tray body is provided with a gas hole communicated with the argon pipe and a gas groove connected with the gas hole, so that the argon discharged from the argon pipe is uniformly dispersed into the technical cavity. The heating device with the argon guide function can uniformly disperse argon into the process cavity, so that the uniformity of a film on a wafer silicon chip is improved.

Description

Heating device with argon gas diversion function

Technical Field

The utility model relates to a sputter platform field especially relates to sputter the heating device who has argon gas water conservancy diversion function of platform interior heating to the vacuum cavity.

Background

Many factors influencing the film layer in the magnetron sputtering vacuum coating are available, wherein the uniformity of the film can be influenced by the gas supply uniformity of argon, and most of the existing magnetron sputtering devices can not uniformly feed the argon into a process cavity. In CN213924999U published in 8/10/2021, the twentieth paragraph of the description of the apparatus for ion beam magnetron sputtering composite coating, "further," an argon gas pipe 10 is installed on the other side above the installation plate 8, an argon gas tank 22 is installed at one end of the argon gas pipe 10, a control valve and a flowmeter 23 are installed on the outer wall of the argon gas pipe 10, and a user can conveniently control and monitor the delivery amount of argon gas by using the control valve and the flowmeter 23 ". Which delivers argon into the vacuum coating chamber 2, i.e. into the process chamber, through only one argon line 10, which results in a non-uniform distribution of argon within the vacuum coating chamber 2.

Disclosure of Invention

In order to overcome the defect in the prior art, the embodiment of the utility model provides a heating device with argon gas water conservancy diversion function is provided, the heating device with argon gas water conservancy diversion function enables argon gas homodisperse to the process chamber in to improve the homogeneity of film on the wafer silicon chip.

In order to achieve the purpose, the utility model adopts the technical proposal that: a heating device with an argon gas diversion function is arranged in a process cavity of a sputtering table and comprises a disc body, wherein a heating wire for heating, a thermocouple for measuring temperature and a cooling pipe for cooling are arranged in the disc body; the argon tube is arranged in the tray body; the bottom plate of the tray body is provided with a gas hole communicated with the argon pipe and a gas groove connected with the gas hole, so that argon discharged from the argon pipe is uniformly dispersed into the process cavity.

Preferably, the air hole is located at the center of the bottom plate.

Further preferably, the air groove comprises a plurality of air grooves, and each air groove extends from the center of the bottom plate to the edge of the bottom plate.

Further preferably, an annular groove is formed in the edge close to the bottom plate, and each air groove is communicated with the air hole and the annular groove.

Further preferably, the plurality of air grooves are uniformly distributed on the surface of the bottom plate.

In the above technical scheme, the air tank comprises three air tanks.

Preferably, the gas groove is a linear groove.

In the above technical solution, 8, the heating device with argon gas guiding function according to claim 1, characterized in that: and a through hole is arranged on the bottom plate and close to the air hole, and a pressure gauge is arranged in the through hole.

In the above technical solution, the heating device further comprises a controller connected to the thermocouple and the heating wire, and configured to adjust the temperature of the base plate.

Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:

1. the utility model discloses in through set up on the bottom plate with the communicating gas pocket of argon gas pipe, and in the gas pocket that the gas pocket links to each other, utilize gas pocket and gas pocket with argon gas homodisperse to the technology cavity in, the argon gas of homodisperse in the technology cavity produces argon gas ion and direction target, argon gas ion strikes out the atom on target surface, is moved to the silicon chip by the atom of striking, and these atoms are at the even deposit of silicon chip surface and form the film.

2. The air holes are formed in the center of the bottom plate, the air grooves extend from the center of the bottom plate to the edge of the bottom plate, and the air grooves are uniformly distributed on the surface of the bottom plate, so that the argon is further promoted to be uniformly dispersed into the process cavity.

3. The air groove is a straight line groove, the structure is simple, and the processing is convenient.

4. The cooling pipe at least comprises a water pipe and an air pipe, and the cooling efficiency is improved.

In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a schematic view of a heating apparatus with argon gas guiding function according to an embodiment of the present invention;

fig. 2 is a schematic diagram of a bottom plate in an embodiment of the present invention.

Reference numbers to the above figures: 1. a tray body; 11. a base plate; 111. air holes; 112. an air tank; 113. a circular groove; 114. a through hole; 2. a heating wire; 3. a thermocouple; 4. a water pipe; 5. an air pipe; 6. an argon pipe; 7. and (4) heat insulation cotton.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

The first embodiment is as follows: referring to fig. 1 to 2, a heating device with an argon gas diversion function is arranged in a process chamber of a sputtering table. The heating device with the argon gas flow guiding function comprises a disc body 1, wherein the disc body 1 is provided with a bottom plate 11 opposite to the process cavity. A heating wire 2 for heating, a thermocouple 3 for measuring temperature, a cooling pipe for cooling, heat insulation cotton 7 and the like are arranged in the tray body 1. The heating wire 2, the thermocouple 3 and the cooling pipe can be arranged according to actual use requirements. The tray body also comprises an argon pipe 6 arranged in the tray body 1; the bottom plate 11 of the tray body 1 is provided with an air hole 111 communicated with the argon pipe 6 and an air groove 112 connected with the air hole 111, so that the argon gas discharged from the argon pipe 6 is uniformly dispersed into the process cavity.

The air hole 111 communicated with the argon pipe 6 and the air groove 112 connected with the air hole 111 are arranged on the bottom plate 11, argon is uniformly dispersed into the process cavity by the air hole 111 and the air groove 112, argon ions are generated by the argon uniformly dispersed in the process cavity and are guided to the target, the argon ions strike atoms on the surface of the target, the struck atoms move towards the silicon wafer, and the atoms are uniformly deposited on the surface of the silicon wafer to form a film.

In an alternative embodiment, the air hole 111 is located in the center of the bottom plate 11. Specifically, the air hole 111 may be a circular hole. The air hole 111 may be formed in other shapes such as a square hole.

In a preferred embodiment, the air groove 112 includes a plurality thereof, which is disposed around the air hole 111. It is further preferable that each of the gas grooves 112 extends from the center of the bottom plate 11 to the edge of the bottom plate 11, so as to guide the argon gas dispersed from the gas holes 111 to the edge of the process chamber.

Further preferably, an annular groove 113 is disposed near the edge of the bottom plate 11, and each air groove 112 communicates the air hole 111 and the annular groove 113.

In a preferred embodiment, the plurality of air slots 112 are uniformly distributed on the surface of the bottom plate 11. Specifically, three of the air grooves 112 may be provided. The number of the gas grooves 112 may be adjusted according to the size of the process chamber. The gas grooves 112 are uniformly distributed on the surface of the bottom plate 11, so that the uniform dispersion of argon in the process chamber is further ensured.

In order to facilitate the machining of the air groove 112, the air groove 112 may be provided as a straight groove. The air groove 112 may be formed in a wave shape or the like, in addition to the straight groove.

Referring to fig. 1, the cooling pipes at least include a water pipe 4 and an air pipe 5, and a plurality of cooling pipes are arranged and cooled in a plurality of ways, so as to further improve the cooling efficiency.

Referring to fig. 2, a through hole 114 is formed on the bottom plate 11 near the air hole 111, and a pressure gauge is disposed in the through hole 114 for monitoring the pressure in the process chamber.

In order to realize more accurate temperature control, the thermocouple 3 and the heating wire 2 are connected with a controller. The controller transmits the temperature measured by the thermocouple 3 to the display screen, the temperature is directly displayed in a digital display mode, the accuracy of data reading is guaranteed, and accurate temperature control is achieved by controlling the heating temperature of the heating wire 2.

The present invention has been explained by using specific embodiments, and the explanation of the above embodiments is only used to help understand the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be changes in the specific embodiments and the application range, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

Claims

1. The utility model provides a heating device with argon gas water conservancy diversion function, heating device with argon gas water conservancy diversion function sets up in the technology cavity of sputtering platform, its characterized in that: the heating device with the argon gas diversion function comprises a disc body, wherein a heating wire for heating, a thermocouple for measuring temperature and a cooling pipe for cooling are arranged in the disc body; the argon pipe is arranged in the tray body; the bottom plate of the tray body is provided with a gas hole communicated with the argon pipe and a gas groove connected with the gas hole, so that the argon discharged from the argon pipe is uniformly dispersed into the technical cavity.

2. The heating device with argon gas guiding function as recited in claim 1, wherein: the air hole is positioned in the center of the bottom plate.

3. The heating device with argon guiding function according to claim 2, characterized in that: the air groove comprises a plurality of air grooves, and each air groove extends from the center of the bottom plate to the edge of the bottom plate.

4. The heating device with argon guiding function according to claim 3, wherein: and the edge close to the bottom plate is provided with a circular groove, and each air groove is communicated with the air hole and the circular groove.

5. The heating device with argon gas guiding function as recited in claim 3, wherein: the air grooves are uniformly distributed on the surface of the bottom plate.

6. The heating device with argon gas guiding function as recited in claim 3, wherein: comprises three air grooves.

7. The heating device with argon guiding function according to claim 1, wherein: the air groove is a linear groove.

8. The heating device with argon gas guiding function as recited in claim 1, wherein: the cooling pipe at least comprises a water pipe and an air pipe.

9. The heating device with argon gas guiding function as recited in claim 1, wherein: and a through hole is arranged on the bottom plate and close to the air hole, and a pressure gauge is arranged in the through hole.

10. The heating device with argon gas guiding function as recited in claim 1, wherein: the temperature controller is connected with the thermocouple and the heating wire and is used for adjusting the temperature of the bottom plate.