CN218394973U - Wafer cleaning equipment process cavity and wafer cleaning equipment - Google Patents

Abstract

The utility model provides a wafer cleaning equipment process cavity and wafer cleaning equipment, wherein the process cavity includes a cavity body, and the cavity body has a cleaning space for accommodating electroplating fixtures; the bottom of the cavity body is provided with a /Water outlet and spray assembly, the upper part of the side wall of the chamber body is provided with a side water inlet assembly; the inlet/drainage port is used to inject or discharge cleaning liquid into the chamber body, and the spray assembly is used to spray the bottom of the electroplating fixture The cleaning liquid and the side water inlet assembly are used to spray the cleaning liquid to the side of the electroplating fixture; the cavity body is also provided with a liquid collection overflow tank for overflowing the cleaning liquid, and the liquid collection overflow tank is set lower than the side water inlet assembly. The utility model overcomes the defects of slow drainage, incomplete and incomplete cleaning and the like in the cleaning equipment in the prior art. By increasing the speed of discharging waste water from the process cavity of the cleaning equipment and taking into account the cleaning of the wafer and the electroplating fixture, the utility model greatly improves the cleaning efficiency of the wafer. Surface cleanliness.

Description

Process cavity of wafer cleaning equipment and wafer cleaning equipment

technical field

The utility model relates to the technical field of semiconductor processing, in particular to a wafer cleaning equipment process chamber and wafer cleaning equipment including the process chamber.

Background technique

With the continuous improvement of IC integration, ensuring the cleanliness of the wafer surface is crucial to obtaining high-performance and high-yield IC devices. Therefore, the excellent standards for wafer surface cleanliness in the industry are becoming increasingly stringent, and wafer cleaning has become particularly important in the process. The purpose of cleaning is to reduce the impurities attached to the wafer surface as much as possible, so as to prevent the impurities on the wafer surface from adversely affecting the performance of IC devices, thereby avoiding product reliability problems. Therefore, during the wafer production process, the wafer needs to be thoroughly cleaned before the next step.

In the current wafer production process, the wafer is soaked and reacted in a variety of different reagents under the grip of the electroplating fixture, and is cleaned in the cleaning equipment under the grip of the electroplating fixture. Fig. 1 shows the structure of electroplating fixture 200 in the prior art, in process, wafer is arranged on the bottom position of electroplating fixture 200 (arrow B points to the position), and electroplating fixture 200 bottom is provided with a protective shell (arrow A points to this The edge position of the protective shell), because the electroplating fixture 200 has many internal components and is relatively sophisticated, so the electroplating fixture 200 should pay attention to prevent water ingress during operation, that is, the liquid level of the process liquid is required not to exceed the edge of the protective shell.

Therefore, the existing cleaning process cannot be cleaned by directly immersing the electroplating jig carrying the wafer in the cleaning solution. Therefore, it is often chosen to place the electroplating jig directly horizontally in the process chamber of the cleaning equipment. The circle is cleaned in a horizontal contact with cleaning solution or deionized water. Practice has shown that this type of cleaning equipment has the following two disadvantages:

One is that the drainage speed is slow, which causes the reagents (such as electroplating solution) of the previous process to remain in the process chamber, causing the process chamber to be polluted; the other is that the cleaning of the wafer is not complete. The method of horizontal contact with deionized water cannot remove the stains in the fine structure of the wafer surface. On the other hand, this cleaning process cannot take into account the cleaning of the wafer surface and the side of the electroplating fixture at the same time (Note: If the side of the electroplating fixture is not cleaned, Because the wafer is clamped by the electroplating jig for various processes, the uncleaned electroplating jig will contaminate the cleaned wafer).

The above two disadvantages hinder the further improvement of the cleanliness of the wafer surface, thereby adversely affecting the reliability of semiconductor devices. Based on this, there is an urgent need in the art for a cleaning device that can overcome the above two shortcomings.

Utility model content

In view of the defects in the prior art, the purpose of this utility model is to provide a wafer cleaning equipment process cavity and a wafer cleaning equipment containing the process cavity, by increasing the speed of discharging waste water from the process cavity and taking into account the wafer and The electroplating fixture is cleaned in two directions, which greatly improves the cleanliness of the wafer surface.

In order to realize the above-mentioned purpose of the invention, the utility model provides the following technical solutions:

A wafer cleaning equipment process chamber, including a chamber body, a cleaning space for accommodating electroplating fixtures is formed in the chamber body; the bottom of the chamber body is provided with an inlet/drainage port and a spray assembly, and the cavity body The upper part of the side wall is provided with a side water inlet assembly;

The inlet/drainage port is used to inject or discharge the cleaning solution into the cavity body, the spray assembly is used to spray the cleaning solution to the bottom of the electroplating fixture, and the side water inlet component is used to spray the cleaning solution to the side of the electroplating fixture; The cavity body is also provided with a liquid collection overflow tank for overflowing the cleaning liquid, and the liquid collection overflow tank is arranged lower than the side water inlet component.

In this technical solution, by adopting the above-mentioned structural design, on the one hand, using the design of the spray assembly, the kinetic energy of the jet impacts the surface of the wafer to wash out the residual liquid medicine in the fine structure of the wafer surface, and utilizes the side entry The design of the water component makes up for the shortcomings of traditional cleaning equipment that cannot clean the side of the electroplating fixture; The fluid in the body quickly reaches pH neutrality to prevent the process chamber from being polluted, and through the cooperation of the two, the flushing of the wafer surface and the side of the electroplating fixture can be realized. The technical solution overcomes the defects of slow drainage, incomplete and incomplete cleaning and the like existing in the prior art, greatly improves the cleanliness of the wafer surface, and ensures the reliability of the semiconductor device.

It should be noted that, firstly, the liquid used for cleaning can be a specific cleaning liquid or deionized water, which is collectively referred to as cleaning liquid in this application for the convenience of description; secondly, due to the There are many devices and they are more sophisticated and complex. Therefore, care should be taken to prevent water from entering the electroplating fixture during cleaning. Therefore, it is required that the height of the cleaning solution during the process should not exceed the edge of the protective shell of the electroplating fixture (Note: In the wafer production process, the wafer Under the clamping of the electroplating fixture, the reaction is soaked in a variety of different reagents. For the same reason, the process liquid cannot exceed the edge of the protective shell of the electroplating fixture. Therefore, the cleaning of the electroplating fixture only needs to clean the edge of the protective shell. below the side).

Preferably, the liquid collection and overflow tank includes an overflow groove and an overflow drain provided at the bottom of the cavity body, and an annular baffle is also arranged in the cavity body, and the annular baffle is connected to the side wall of the cavity body An overflow groove is formed between them, the overflow groove is connected to the overflow drain, and the inner space of the annular baffle forms a cleaning tank.

In this technical solution, by adopting the above-mentioned structural design, the design of the annular baffle is used to form the overflow groove. On the one hand, the annular baffle can play a buffer role when the cleaning liquid is quickly injected into the process chamber. On the other hand, Compared with the method of directly opening holes on the side wall of the process chamber for overflow, the technical solution has a simpler structure, more convenient processing, and facilitates the recovery of cleaning liquid through the overflow drain.

Preferably, it also includes a storage tank, a recovery pipeline, a circulation control valve, a flow pump, an online heater and a filter, the overflow drain is connected to the storage tank, and the recovery pipeline is sequentially connected to the drain of the storage tank, the circulation control valve, the flow rate Pumps, in-line heaters, filters and inlet/outlet.

In this technical solution, by adopting the above-mentioned structural design, the cleaning liquid overflowing through the liquid collection overflow tank can be recycled and recycled, which greatly reduces the process cost, and in the process of recycling the cleaning liquid, it is also The online heater can be used to heat the cleaning solution to further improve the cleaning effect.

Preferably, there are multiple overflow drains, and the overflow drains are evenly distributed on the bottom of the cavity body.

Because the inlet/drain port adopts a large-diameter design and injects water through pressure, while the overflow drain drains water through gravity, if the diameter of the overflow drain is smaller than that of the inlet/drain port, it is difficult to achieve the flow rate between pressure water injection and gravity drainage Therefore, this technical solution adopts the above-mentioned structural design to design the number of overflow drains to be multiple. On the one hand, the total drainage diameter of the overflow drain is increased to facilitate the formation of a gap between pressure water injection and gravity drainage. Flow balance; on the other hand, the design of multiple overflow outlets also makes the drainage process more gentle and efficient.

Preferably, the spray assembly includes a spray pipe and a water inlet arranged at the bottom of the process chamber, the spray pipe includes several spray ports, and the several spray ports are arranged along the central axis of the bottom of the chamber body.

In this technical solution, by adopting the above-mentioned structural design, the spray pipe is arranged along the central axis of the bottom of the cavity body, thereby being able to flush the surface of the wafer from a middle position, thereby improving cleaning efficiency.

Preferably, the bottom of the cavity body is further provided with a hot water spray head for spraying heated cleaning solution to the bottom of the electroplating fixture.

In this technical solution, by adopting the above-mentioned structural design, on the basis of the spray assembly, a hot water spray head is added, and through the joint action of the hot water spray head and the spray assembly, the remaining particles in the fine structure of the wafer surface The liquid medicine is washed out to further improve the cleaning effect.

Preferably, the side water inlet assembly includes a plurality of side water inlets, and the plurality of side water inlets are arranged on the side wall of the cavity body uniformly and at the same height.

In this technical solution, by adopting the above-mentioned structural design, when the electroplating fixture is cleaned, multiple side water inlets will surround the side of the electroplating fixture and rinse it, so as to ensure that all positions on the side of the electroplating fixture are cleaned to the greatest extent. .

Preferably, the bottom inner wall of the cavity body has an inverted cone structure, and the inlet/outlet is arranged at the lowest point of the inverted cone structure.

In this technical solution, by adopting the above-mentioned structural design, on the one hand, it can play a certain buffering role in the process of injecting large-flow water into the inlet/outlet, and on the other hand, it facilitates the rapid discharge of cleaning wastewater.

A wafer cleaning device, comprising the wafer cleaning device process chamber described in any one of the above.

In this technical solution, by adopting the above-mentioned structural design, the defects of slow drainage, incomplete and incomplete cleaning and other defects in the cleaning equipment in the prior art are overcome, and the cleanliness of the wafer surface is greatly improved.

Compared with the prior art, the utility model has the following beneficial effects:

1. The process cavity of the wafer cleaning equipment provided by the utility model is designed with two sets of liquid discharge structures, the dual-purpose inlet/drainage port for fast inlet and drainage at the bottom and the liquid collection and overflow tank, which realizes the discharge of liquid in the cavity and the The control of the discharge speed enables the cleaning liquid to move in and out quickly during the process, so that the liquid in the cavity can quickly reach pH neutrality, avoiding the inside of the cavity from being polluted, thereby improving the cleaning effect.

2. The process cavity of the wafer cleaning equipment provided by the utility model is designed with two sets of cleaning structures: bottom spraying and side flushing. The bottom spraying uses the kinetic energy of the jet to impact the surface of the wafer to wash out the remaining electroplating liquid in the microstructure , Side flushing makes up for the shortcomings of traditional cleaning equipment that cannot clean the side of the plating fixture, thereby greatly improving the cleaning effect and improving the cleanliness of the wafer surface.

Description of drawings

Other features, objects and advantages of the present invention will become more apparent by reading the detailed description of non-limiting embodiments with reference to the following drawings:

Fig. 1 is the structural representation of the electroplating fixture used in the prior art;

2 is a schematic structural view of the process chamber of the wafer cleaning equipment described in the first embodiment of the present invention;

Fig. 3 is a cross-sectional view of the process chamber of the wafer cleaning equipment described in the first embodiment of the present invention;

FIG. 4 is a second cross-sectional view of the process chamber of the wafer cleaning equipment according to the first embodiment of the present invention.

The figure shows:

100-Wafer cleaning equipment process chamber;

10-cavity body;

11-cavity bottom wall;

12-cavity side wall;

13 - cleaning space;

20-inlet/drainage port;

30 - spray assembly;

31 - spray water inlet;

32 - spray pipe;

40-side water inlet assembly;

41 - side water inlet;

50-liquid collection overflow tank;

51 - overflow drain;

52 - overflow groove;

60 - hot water nozzle;

70-annular baffle;

71 - cleaning tank;

200-electroplating fixture;

A - the edge of the protective case;

B-wafer location

Detailed ways

In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

It should be noted that like numerals and letters denote similar items in the following figures, therefore, once an item is defined in one figure, it does not require further definition and explanation in subsequent figures. In addition, all directional indications (such as up, down, left, right, front, back, bottom...) in this application are only used to explain the relative position between the various parts in a certain posture (as shown in the drawing) relationship, motion, etc., if the particular pose changes, the directional indication changes accordingly.

first embodiment

As shown in Figures 2 to 4, the present embodiment provides a wafer cleaning equipment process chamber 100, the process chamber includes a chamber body 10, the chamber body 10 is composed of a chamber bottom wall 11 and a chamber side wall 12 is a nearly cylindrical structure with an upward opening, and a cleaning space 13 for accommodating the electroplating fixture 200 is formed in the cavity body 10 .

As shown in Figures 2 and 3, a liquid collection overflow tank 50 is provided in the cavity body 10, and the liquid collection overflow tank 50 includes an overflow groove 52 and an overflow drain 51, and the liquid collection overflow tank 50 is used for The cleaning liquid overflowing from the cavity body 10 is discharged. Specifically, an annular baffle 70 is disposed inside the cavity body 10, the bottom of which is fixed to the bottom wall 11 of the cavity or integrally formed with the bottom wall 11 of the cavity, and between the annular baffle 70 and the side wall 12 of the cavity An overflow groove 52 is formed, and a cleaning tank 71 is formed in the inner space of the annular baffle 70 . Wherein, the overflow groove 52 is connected to the overflow outlet 51 disposed at the bottom of the cavity body 10 . In this embodiment, the number of overflow drains 51 is four, and the four overflow drains 51 are evenly distributed on the bottom circumference of the cavity body 10 .

In addition, the wafer cleaning equipment process chamber 100 provided in this embodiment also includes a storage tank, a recovery pipeline, a circulation control valve, a flow pump, an online heater, and a filter, wherein the overflow drain 51 is connected to the storage tank to recover The pipes are sequentially connected to the drain port of the storage tank, the circulation control valve, the flow pump, the in-line heater, the filter and the inlet/drain port 20 . This structure is designed so that when the cleaning liquid overflowing through the liquid collection overflow tank 50 needs to be recovered and recycled, the circulation control valve is opened, and after the cleaning liquid flows out through the overflow drain 51 and enters the storage tank, the flow pump will Next, it is heated by an online heater along the recovery pipeline, filtered by a filter, and then re-injected into the cleaning tank 71 through the inlet/drainage port 20, and the recovery cycle of the overflow and drainage of the inlet water can be realized.

Further, as shown in Figure 3, the bottom of the cavity body 10 is also provided with an inlet/drainage port 20, the inlet/drainage port 20 is set at the center of the bottom of the cavity body 10, and a water inlet valve and a drain valve are arranged therein. , is a large-diameter dual-purpose inlet/discharge port. When the wafer cleaning equipment process chamber 100 provided in this embodiment is working, the cleaning liquid can quickly enter the cleaning tank 71 through the inlet/drainage port 20, or clean the wastewater It can be quickly discharged from the cleaning tank 71 through the inlet/drainage port 20 .

In particular, in this embodiment, the bottom wall 11 of the cavity is designed with an inverted cone structure, and the inlet/drainage port 20 is set at the lowest point of the inverted cone structure on the bottom wall 11 of the cavity. This structural design, on the one hand, enables the inlet/drainage port 20 to play a certain buffering role in the process of injecting a large flow of cleaning liquid; on the other hand, it facilitates the rapid discharge of cleaning wastewater. The arrangement of the spray pipe 32 along the diameter direction of the bottom wall 12 of the cavity does not conflict with the position of the center of the circle at the bottom of the cavity body 10 where the inlet/outlet 20 is arranged.

In addition, a spray assembly 30 is also provided in the cavity body 10, and the spray assembly 30 includes a spray pipe 32 and a spray water inlet 31 arranged at the bottom of the cavity body 10. In this embodiment, as shown in FIG. 4 , The number of spray water inlets 31 is two, and the two spray water inlets 31 are respectively connected to the two ends of the spray pipe 32. The spray pipe 32 is provided with a plurality of spray ports along its length direction. When cleaning the wafer , the cleaning liquid enters the spray pipe 32 from the spray water inlet 31, and sprays on the bottom position of the electroplating fixture 200 through the spray port provided on the spray pipe 32, that is, sprays on the wafer, thus by means of the jet The kinetic energy impacts the surface of the wafer, washing out the residual chemical solution in the fine structure of the wafer surface.

In particular, in this embodiment, the shower pipe 32 is arranged along the diameter direction of the bottom wall 11 of the cavity, so that the spraying can be performed on the middle position of the wafer, and the uniformity of spraying and the cleaning effect can be improved. In addition, in this embodiment, a hot water spray head 60 is provided at the bottom of the chamber body 10, and the hot water spray head 60 is used to spray heated cleaning liquid, which cooperates with the spray assembly 30 to improve the cleaning effect on the wafer surface.

Further, as shown in FIG. 2 and FIG. 3 , the side wall 12 of the cavity body (specifically, the inner side wall) is also provided with a side water inlet assembly 40, and the side water inlet assembly 40 is arranged higher than the upper edge of the liquid collection overflow tank 50, The side water inlet assembly 40 includes a plurality of side water inlets 41, and the side water inlets 41 are evenly distributed on the side wall 12 of the cavity along the circumferential direction of the side wall of the cavity and at the same height. When cleaning the electroplating fixture 200, the side water inlets 41 surround the electroplating The side of the fixture 200 is sprayed with cleaning solution to the side of the electroplating fixture 200 to complete the cleaning of the side of the electroplating fixture 200. Since the side water inlets 41 are arranged in multiples and evenly distributed, the cleaning effect of each position on the side of the electroplating fixture 200 can be guaranteed.

The process operation flow of the wafer cleaning equipment process chamber 100 provided in this embodiment can be performed as follows:

S1: Make the electroplating jig 200 clamp the wafer into the chamber body 10, turn on the spray assembly 30, and make it spray the cleaning solution to the bottom of the electroplating jig 200, so as to remove some microstructures of the wafer through high-intensity spraying force. Stains rinse out. During this process, the drain valve of the inlet/drainage port 20 is open, the water inlet valve is closed, and the waste water sprayed by the spray assembly 30 can be discharged out of the cavity body 10 through the inlet/drainage port 20 .

S2: Keep the edge A of the protective shell of the electroplating fixture 200 slightly higher than the upper edge of the liquid collection overflow tank 50, so that the drain valve of the inlet/drainage port 20 is in the closed state, and the water inlet valve is in the open state, thereby passing through the inlet/drainage port 20 Inject a large flow of cleaning liquid into the cleaning tank 71, and the liquid level continues to rise until it overflows to the liquid collection overflow tank 50. At this time, the valve of the overflow drain 51 of the liquid collection overflow tank 50 can be delayed to open, thereby making the collection The liquid level height of the overflow liquid in the liquid overflow tank 50 continues to rise until the liquid level height in the liquid collection overflow tank 50 and the liquid level height outside the liquid collection overflow tank 50, that is, the cleaning tank 71, reach a preset height At this time, the overflow outlet 51 valve of the liquid collection overflow tank 50 is opened, and the cleaning liquid is discharged through the liquid collection overflow tank 50, so as to realize water injection at the inlet/drainage port 20 and collection overflow The flow of drainage from the tank 50 is balanced.

In the above process of step S2, the cleaning solution is continuously injected into the cleaning tank 71 through the inlet/drainage port 20, and continuously overflows through the liquid collection overflow tank 50. Since the edge A of the protective shell of the electroplating fixture 200 is only slightly higher than the liquid collection overflow The upper edge of the launder 50 , so the cleaning solution continuously rinses the surface of the wafer and the position below the edge A of the protective shell of the electroplating fixture 200 , thereby improving the cleanliness of the surface of the wafer and the side of the electroplating fixture 200 . Moreover, the cleaning liquid at this stage can be recovered and recycled. Specifically, the circulation control valve can be opened while the overflow drain 51 is opened. After the cleaning liquid flows out through the overflow drain 51 and enters the storage tank, the flow Under the action of the pump, it is heated by an online heater along the recovery pipeline, filtered by a filter, and then injected into the cleaning tank 71 through the inlet/drainage port 20 to realize the recovery and recycling of the cleaning liquid. After a period of water inflow, overflow and drainage recovery cycle, the cleaning liquid in the process chamber quickly reaches pH neutrality. After the cleaning at this stage is completed, the water inlet valve of the inlet/drainage port 20 is in a closed state, the drain valve is in an open state, and the circulation control valve is in a closed state, so that the liquid in the cleaning tank 71 is quickly discharged through the inlet/drainage port 20, The liquid in the liquid collection overflow groove 50 is quickly discharged through the overflow drain 51 .

S3: In this step, the sides of the electroplating jig 200 are cleaned. Specifically, since the electroplating jig 200 has many internal components and is more sophisticated and complex, care must be taken to prevent the electroplating jig 200 from entering water during the entire process, that is, in the last link, the electroplating jig 200 cannot simply be immersed in the chemical solution to clean its side. . Therefore, in this cleaning stage, the electroplating fixture 200 is raised to the side water inlet 41 of the side water inlet assembly 40 slightly higher than the side water inlet 41 of its protective shell edge A, and then the side water inlet 41 is watered to spray and rinse the side of the electroplating fixture 200 and complete For final cleaning, if the cleaning waste liquid at this stage flows into the cleaning tank 71, it can be discharged through the inlet/drainage port 20, and if it flows into the liquid collection overflow tank 50, it can be discharged through the overflow drain port 51 without recycling.

2nd embodiment

This embodiment provides a wafer cleaning device, which includes the process chamber 100 of the wafer cleaning device described in Embodiment 1.

The specific embodiments of the utility model have been described above. Through the above description, relevant workers can make various changes and modifications within the scope of not departing from the technical idea of the utility model.

Claims (9)

1. A wafer cleaning equipment process cavity is characterized by comprising a cavity body, wherein a cleaning space for accommodating an electroplating clamp is formed in the cavity body; the bottom of the cavity body is provided with a water inlet/outlet and a spraying assembly, and the upper part of the side wall of the cavity body is provided with a side water inlet assembly;

the water inlet/outlet is used for injecting or discharging cleaning liquid into the cavity body, the spraying assembly is used for spraying the cleaning liquid to the bottom of the electroplating fixture, and the side water inlet assembly is used for spraying the cleaning liquid to the side face of the electroplating fixture; and a liquid collection overflow trough for enabling the cleaning liquid to overflow is also arranged in the cavity body, and the liquid collection overflow trough is lower than the side water inlet component.

2. The wafer cleaning equipment process chamber as claimed in claim 1, wherein the liquid collection overflow trough comprises an overflow groove and an overflow drain arranged at the bottom of the chamber body, an annular baffle is further arranged in the chamber body, the overflow groove is formed between the annular baffle and the side wall of the chamber body, the overflow drain is connected to the lower part of the overflow groove, and a cleaning tank is formed in the inner space of the annular baffle.

3. The process chamber of wafer cleaning equipment as claimed in claim 2, further comprising a storage tank, a recycling pipe, a circulation control valve, a flow pump, an on-line heater and a filter, wherein the overflow drain is connected with the storage tank, and the recycling pipe is connected with the liquid outlet, the circulation control valve, the flow pump, the on-line heater, the filter and the water inlet/outlet of the storage tank in sequence.

4. The processing chamber of claim 2, wherein the number of the overflow drains is multiple, and the overflow drains are uniformly distributed at the bottom of the chamber body.

5. The wafer cleaning equipment process chamber of claim 1, wherein the spray assembly comprises a spray pipe and a water inlet arranged at the bottom of the process chamber, the spray pipe comprises a plurality of spray openings, and the plurality of spray openings are arranged along the central axis of the bottom of the chamber body.

6. The process chamber of claim 1, wherein a hot water spray nozzle is further arranged at the bottom of the chamber body, and the hot water spray nozzle is used for spraying heated cleaning solution to the bottom of the electroplating fixture.

7. The process chamber of wafer cleaning equipment as claimed in claim 1, wherein the bottom inner wall of the chamber body is an inverted cone structure, and the water inlet/outlet is disposed at the lowest point of the inverted cone structure.

8. The wafer cleaning equipment process chamber as recited in claim 1, wherein the side water inlet assembly comprises a plurality of side water inlets, and the side water inlets are uniformly and equally disposed on the sidewall of the chamber body.

9. A wafer cleaning equipment, characterized by comprising the wafer cleaning equipment process chamber of any one of claims 1 to 8.

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