CN218160306U - Bias device and substrate processing apparatus - Google Patents

Abstract

The utility model relates to a biasing means and substrate treatment facility, biasing means include main cavity subassembly, biasing board and conduction subassembly. The main cavity component is provided with an inner cavity; a portion of the space of the interior cavity forms a processing station capable of receiving a carrier. The bias pressure plate is connected to the main cavity assembly and arranged on one side of the processing station. The conductive assembly is electrically connected between the bias plate and the bias power source. Since the bias plate is disposed at one side of the processing station, one electrode of the electric field is formed at one side of the substrate. With the other electrode of the electric field on the side of the processing station facing away from the bias plate, the plasma or other particles can be directed to move into contact with the substrate to effect a corresponding process on the substrate. Because the bias plate is connected to the main cavity assembly, the position of the bias plate is kept stable relative to the main cavity assembly, so that the state of the electric field cannot be changed due to the movement of the carrier, the stability of the electric field is improved, and the process treatment quality of the substrate is ensured.

Description

Bias device and substrate processing apparatus

Technical Field

The utility model relates to a substrate processing technology field especially relates to a biasing means and substrate treatment facility.

Background

The substrate may need to be subjected to various treatments before it is shipped to meet the requirements of the application. For example, glass is used as a substrate, and is subjected to surface roughening treatment before shipment to produce an anti-glare effect on the surface of the glass.

In some process links, because an electric field is needed to move plasma or other particles relative to a substrate, the physical properties of ionized gas can be controlled by adjusting the properties of the electric field, and different process effects can be produced on the substrate.

To form the electric field, conventional techniques typically electrically connect the carrier carrying the substrate to an electrode of a bias power supply, such that the carrier forms a portion of the electrode. However, the mobility of the carrier causes the stability of the electric field to be low, which affects the processing quality of the substrate.

SUMMERY OF THE UTILITY MODEL

Accordingly, it is desirable to provide a bias device and a substrate processing apparatus, which can solve the problem of low stability of an electric field due to the mobility of a carrier.

A biasing device, comprising:

a main cavity component provided with an inner cavity; a part of the space of the inner cavity forms a processing station capable of accommodating a carrier;

the bias plate is connected to the main cavity assembly and arranged on one side of the processing station; and

a conductive assembly electrically connected between the bias plate and a bias power source.

The biasing device is electrically connected between the biasing plate and one electrode of the biasing power supply through the conducting assembly, so that the potential of the biasing plate is consistent with the potential of the electrode of the biasing power supply. After the substrate enters the processing station of the inner cavity under the conveying of the carrier, one electrode of an electric field is formed on one side of the substrate due to the fact that the bias plate is arranged on one side of the processing station. With the other electrode of the electric field on the side of the processing station facing away from the bias plate, the plasma or other particles can be directed to move into contact with the substrate to effect a corresponding process on the substrate. Because the bias plate is connected to the main cavity assembly, the position of the bias plate is kept stable relative to the main cavity assembly, so that the state of the electric field cannot be changed due to the movement of the carrier, the stability of the electric field is improved, and the process treatment quality of the substrate is ensured.

In one embodiment, the number of conductive elements is at least two; a space is provided between the conduction point of one of the conduction components and the conduction point of the other conduction component.

In one embodiment, the conductive component comprises a stationary conductor, a compliant conductor, and a shield; the fixed conductor is connected to the main cavity assembly; the plastic conductor is electrically connected between the fixed conductor and the bias plate; wherein the electrical connection point between the plastic conductor and the bias plate is surrounded by the shield, and/or the electrical connection point between the plastic conductor and the fixed conductor is surrounded by the shield.

In one embodiment, the biasing device includes an insulator disposed between the stationary conductor and the main lumen assembly.

In one embodiment, the biasing device comprises a seal; the sealing element is abutted between the main cavity assembly and the insulating element, and/or the sealing element is abutted between the fixed conductor and the insulating element.

In one embodiment, the length of the bias plate is greater than or equal to the length of the processing station; the width of the bias plate is greater than or equal to the width of the processing station.

In one embodiment, an outward region of the bias plate is covered with an insulating coating.

In one embodiment, the relative distance between the bias plate and the processing station is 3mm to 200mm.

A substrate processing apparatus includes a biasing device.

In one embodiment, the plasma generating device is connected to the main chamber assembly; the processing station is between the plasma generating device and the bias plate.

Drawings

Fig. 1 is a schematic perspective view of a biasing device according to an embodiment of the present invention;

FIG. 2 is a perspective view of the biasing device shown in FIG. 1 at another angle;

FIG. 3 is a partial schematic view of the biasing device of FIG. 1 with portions of the wall panel hidden;

FIG. 4 is a partial schematic view of the biasing device shown in FIG. 3;

FIG. 5 is an enlarged view of the biasing device shown in FIG. 4 at A;

fig. 6 is a perspective view of a carrier suitable for the biasing device shown in fig. 1.

Reference numerals are as follows: 10. a biasing device; 20. a main chamber assembly; 201. an inner cavity; 21. a top plate; 22. a base plate; 221. a through hole; 23. a wall panel; 231. reserving a port; 232. a port; 30. biasing the plate; 301. a forward region; 31. an insulating device; 40. a conductive component; 401. a conduction point; 41. a fixed conductor; 411. a conductive member; 412. an outer end; 413. a threaded member; 42. a moldable conductor; 421. an insulating outer layer; 422. a metal wire core; 43. a shield; 44. an electrical interface; 50. an insulating member; 60. a seal member; 800. a carrier; 801. a main frame; 802. a bottom rod.

Detailed Description

In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, as those skilled in the art will be able to make similar modifications without departing from the spirit and scope of the present invention.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless explicitly defined otherwise.

In the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly, e.g., as being fixedly connected, detachably connected, or integrated; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

In the present application, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact via an intermediate medium. Also, a first feature "on," "above," and "over" a second feature may be directly on or obliquely above the second feature, or may simply mean that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.

The technical solution provided by the embodiments of the present invention is described below with reference to the accompanying drawings.

The utility model provides a substrate treatment facility.

In some embodiments, the substrate processing apparatus is capable of performing a transfer process, a cleaning process, or an etching process on a substrate. Specifically, as shown in connection with fig. 3, the substrate processing apparatus may have one or more internal chambers 201. The substrate may be subjected to a cleaning process, an etching process, or other processing after entering the cavity 201. When the substrate processing apparatus has a chamber 201, the substrate processing apparatus may move the substrate into the chamber 201 or out of the chamber 201 by the transfer process. When the substrate processing apparatus has a plurality of inner cavities 201, the substrate processing apparatus can also make the substrate enter one inner cavity 201 while leaving another inner cavity 201 by the transfer process.

In one embodiment, the substrate comprises glass, or other material having a composition or property close to that of glass. In another embodiment, the substrate further comprises a metal or alloy material. Specifically, the substrate may be in the form of a plate or a sheet. More specifically, in the cleaning process, the substrate processing apparatus may perform plasma cleaning of the surface to be processed of the substrate to be processed using an inert gas source or other cleaning gas source. More specifically, in an etching process, the substrate processing apparatus may utilize an inert gas source and a fluorine-containing gas source or other etching gas source to plasma etch a surface to be processed of a substrate.

In some embodiments, as shown in conjunction with fig. 1-5, the substrate processing apparatus includes a biasing device 10, the biasing device 10 configured to form an inner cavity 201 and to form one of the poles of the electric field. In one embodiment, the biasing device 10 includes a main lumen assembly 20, the main lumen assembly 20 being configured to form at least a partial boundary of the internal lumen 201. Another portion of the boundary of the lumen 201 may be formed by other devices. Further, a portion of the space of the inner cavity 201 forms a processing station that is capable of fully accommodating the carrier 800. When a substrate needs to be processed, carrier 800, carrying one or more substrates, moves to a processing station. More specifically, the carrier 800 is capable of passing through the processing stations along a predetermined path. More specifically, as shown in fig. 3, the main chamber assembly 20 includes a top plate 21, a bottom plate 22, and a wall plate 23. The top plate 21 is used to form the top of the main chamber assembly 20 and the bottom plate 22 is used to form the bottom. The two wall plates 23 are arranged in a manner that the plate surfaces are horizontally opposite to each other, and the upper sides of the wall plates 23 are connected to the top plate 21 and the lower sides of the wall plates 23 are connected to the bottom plate 22. Further, as shown in fig. 1, one of the wall plates 23 is provided with a reserved opening 231. Further, as shown in fig. 1 and 2, the other wall 23 has a through hole 232 formed therein for allowing the substrate to enter the cavity 201. More specifically, port 232 is directly opposite the process station.

In some embodiments, the substrate processing apparatus includes a moving device for performing a material moving process to move the substrate relative to the cavity 201. Specifically, the moving device includes a plurality of rotatable guide wheels and a driving device for driving the guide wheels to rotate, the guide wheels may be disposed in the inner cavity 201, the carrier 800 is carried by the guide wheels, and when the guide wheels rotate, the carrier 800 moves in the inner cavity 201 under the action of the guide wheels. Further, as shown in fig. 6, the carrier 800 includes a main frame 801 and a bottom bar 802 connected to the main frame 801, wherein the main frame 801 is used for mounting a substrate. The guide wheels are distributed along a straight line, and the bottom rod 802 is supported on the guide wheels. In other embodiments, carrier 800 may be any structure capable of carrying a substrate.

In some embodiments, the substrate processing apparatus includes a plasma generating device coupled to the main chamber assembly 20 for generating a plasma. In one embodiment, the plasma is used to perform a cleaning process on the substrate surface. In another embodiment, the plasma is used to etch a surface of a substrate. Further, after the plasma generating device is installed to cover the reserved opening 231 or embedded in the reserved opening 231, the plasma generating device can form another part of the boundary of the inner cavity 201. More specifically, after the inner cavity 201 is vacuumized, a vacuum environment is formed in the inner cavity 201, and the substrate is subjected to corresponding process treatment in the inner cavity 201.

In some embodiments, a substrate processing apparatus includes a bias power supply provided with an electrode. The biasing device 10 is used to bias an electrode electrically connected to a bias power supply and assist in creating an electric field within the vacuum environment. Further, the bias power supply has a positive electrode and a negative electrode.

In some embodiments, as shown in conjunction with fig. 3-5, the biasing device 10 includes a biasing plate 30 and a conductive element 40. A bias plate 30 is connected to the main chamber assembly 20 and is disposed to one side of the treatment station. The conductive member 40 is electrically connected between the bias plate 30 and a bias power source. Since the conductive member 40 is electrically connected between the bias plate 30 and one of the electrodes of the bias power supply, the potential of the bias plate 30 coincides with the potential of the bias power supply electrode. After the substrate is transported by the carrier 800 into the processing station of the chamber 201, an electrode of an electric field is formed at one side of the substrate due to the bias plate 30 disposed at one side of the processing station. With the other electrode of the electric field on the side of the processing station facing away from the bias plate 30, the plasma or other particles can be directed to move into contact with the substrate to produce a corresponding process on the substrate. Because the bias plate 30 is connected to the main chamber assembly 20, the position of the bias plate 30 is kept stable relative to the main chamber assembly 20, so that the state of the electric field is not changed due to the movement of the carrier 800, thereby improving the stability of the electric field and ensuring the process treatment quality of the substrate.

In some embodiments, the length of the bias plate 30 is greater than or equal to the length of the processing station. The width of the bias plate 30 is greater than or equal to the width of the processing station. Specifically, the thickness direction of the processing station is parallel to the thickness direction of the bias plate 30, and the midpoint of the processing station and the middle region of the bias plate 30 are collinear on the same horizontal line. The length of the bias plate 30 in the vertical direction is a first length L1, a horizontal plane above the midpoint of the bias plate 30 and spaced 15% · L1 from the midpoint of the bias plate 30 is a first horizontal plane, a horizontal plane below the midpoint of the bias plate 30 and spaced 15% · L1 from the midpoint of the bias plate 30 is a second horizontal plane, and the middle region is a region of the bias plate 30 between the first horizontal plane and the second horizontal plane. Further, the midpoint of the processing station is collinear with the midpoint of the bias plate 30 on a horizontal line that is perpendicular to the plate surface of the bias plate 30. Because the length of the bias plate 30 is greater than or equal to the length of the processing station and the width of the bias plate 30 is greater than or equal to the width of the processing station, the range of the electric field is fully expanded, and the processing station is completely in the range of the electric field. Since the processing station can completely accommodate the carrier 800 and the substrate carried on the carrier 800, it can be ensured that the electric field passes through any portion of the carrier 800 and any substrate carried on the carrier 800. In one embodiment, the carrier 800 and the bias plate 30 are both rectangular. The length of the biasing plate 30 is parallel to the horizontal plane and the width of the biasing plate 30 is perpendicular to the horizontal plane.

In some embodiments, the processing station is between the plasma generating device and the bias plate 30. In particular, since the plasma generating device forms the other pole of the electric field, when the processing station is between the plasma generating device and the bias plate 30, then the electric field lines can pass through the processing station in a vertical or near vertical direction. After the carrier 800 transports the substrate to the processing station, the electric field force can direct the plasma toward the substrate in the processing station, thereby causing a corresponding process effect on the substrate.

In some embodiments, the outward region of the bias plate 30 is covered with an insulating coating. Specifically, the outward region is a part of the surface of the bias plate 30, and the other part of the surface of the bias plate 30 is the forward region 301. The forward area 301 can reach the processing station along a predetermined straight line segment, which is perpendicular to the plane of the processing station, and which does not cross the forward area 301. More specifically, the plane of the processing station is the plane that provides the processing station with the largest projected area. The outward region of the bias plate 30 cannot reach the processing station through a predetermined straight line segment, and thus the distribution of the electric field is not affected after the outward region of the bias plate 30 is covered with an insulating coating having an insulating property. At the same time, the insulating coating prevents electrical discharge from occurring in the outward region of the biasing plate 30, and in particular between the outward region and the wall 23 of the main chamber assembly 20, thereby providing safety to the biasing device 10. Specifically, any material having insulating properties may be used for the insulating coating.

In some embodiments, the relative distance between the bias plate 30 and the process station is 3mm to 200mm. Specifically, the edge surface of the processing station close to the bias plate 30 is a proximal edge surface, and the surface of the carrier 800 facing the bias plate 30 coincides with the proximal edge surface when the carrier 800 is at the processing station. By relative distance between the biasing plate 30 and the processing station, we understand the shortest distance between the forward region 301 and the proximal edge face of the biasing plate 30. Because the relative distance between the bias plate 30 and the processing station is 3 mm-200 mm, the bias plate 30 and the carrier 800 can be prevented from being directly contacted, and short circuit can be prevented. Meanwhile, the space of the inner cavity 201 can be effectively controlled, and the overlarge volume of the main cavity component 20 is avoided. In some embodiments, the relative distance between the bias plate 30 and the processing station is 3mm, 10mm, 50mm, 100mm, 150mm, or 200mm. More specifically, the relative distance between the bias plate 30 and the processing station may vary anywhere between 3mm and 200mm.

In some embodiments, as shown in connection with fig. 3, the biasing plate 30 is secured to the main chamber assembly 20 by an insulating device 31. More specifically, the insulator device 31 is connected between the bias plate 30 and the wall plate 23. Thereby supporting the bias plate 30.

In some embodiments, the number of conductive elements 40 is one, i.e., the need for electrical communication between the bias plate 30 and the bias power supply is met.

In some embodiments, as shown in connection with fig. 4, the number of conductive elements 40 is at least two. A space is provided between the conductive point 401 of one of the conductive members 40 and the conductive point 401 of the other conductive member 40. Specifically, the conductive point 401 of the conductive element 40 is the connection point between the conductive element 40 and the bias plate 30. In one embodiment, one end of the conductive element 40 is welded to the bias plate 30, and the welding position between the conductive element 40 and the bias plate 30 is the conductive point 401 of the conductive element 40. Because the number of the conducting assemblies 40 is two or more and the conducting points 401 of different conducting assemblies 40 are spaced, different conducting assemblies 40 are connected to different parts of the bias plate 30 to conduct electric potentials to different areas of the bias plate 30, so that the electric potentials of all areas of the bias plate 30 are kept uniform, and the magnitude and direction of the electric field passing through all positions of the processing station are kept close. In one embodiment, the conductive points 401 of the plurality of conductive elements 40 are distributed along the edge direction of the bias plate 30. In one embodiment, the conductive points 401 of the plurality of conductive elements 40 are distributed along a line where the bottom edge of the bias plate 30 is located.

In some embodiments, as shown in fig. 4 and 5, the conductive element 40 includes a fixed conductor 41, a compliant conductor 42, and a shield 43. Stationary conductor 41 is connected to main lumen assembly 20. The compliant conductor 42 is electrically connected between the fixed conductor 41 and the bias plate 30. In particular, the shape of the malleable conductor 42 can be varied to accommodate the relative position between the fixed conductor 41 and the bias plate 30. In one embodiment, the malleable conductor 42 is a wire with an insulating outer layer 421. In one embodiment, the compliant conductor 42 is electrically connected between the fixed conductor 41 and the bias plate 30, which may be understood as one end of the metal core 422 of the compliant conductor 42 contacting or being fixed to the fixed conductor 41, while the other end of the metal core 422 contacts or being fixed to the bias plate 30. More specifically, the metal core 422 is fixed to and electrically connected to the bias plate 30 via an electrical connection point, and the electrical connection point between the metal core 422 and the bias plate 30 is the conductive point 401.

In one embodiment, as shown in connection with FIG. 4, the electrical connection points between the compliant conductors 42 and the bias plate 30 are surrounded by a shield 43. Specifically, one shielding element 43 is used for cooperating with the surface of the bias plate 30 to form a first enclosing space, the electrical connection point between the plastic conductor 42 and the bias plate 30 is located in the first enclosing space, and the first enclosing space is insulated from the inner cavity 201, so that abnormal discharge at the electrical connection point between the plastic conductor 42 and the bias plate 30 can be avoided, and the plasma movement is prevented from being influenced by the discharge.

In one embodiment, as shown in connection with fig. 5, the electrical connection points between the plastic conductors 42 and the stationary conductors 41 are surrounded by a shield 43. Specifically, the other shielding element 43 is matched with the surface of the fixed conductor 41 to form a second enclosed space, the electrical connection point of the plastic conductor 42 and the fixed conductor 41 is located in the second enclosed space, and the second enclosed space is insulated and isolated from the inner cavity 201, so that abnormal discharge at the electrical connection point of the plastic conductor 42 and the fixed conductor 41 can be avoided, and the movement of plasma is prevented from being influenced by the discharge.

In some embodiments, as shown in connection with fig. 5, the biasing device 10 includes an insulator 50, the insulator 50 being disposed between the stationary conductor 41 and the main lumen assembly 20. Specifically, the bottom plate 22 is provided with a through hole 221. The fixed conductor 41 includes a conductive member 411 disposed through the through hole 221. In one embodiment, the insulating member 50 is disposed between the edge of the through hole 221 and the conductive member 411, so that the conductive member 411 is isolated from the bottom plate 22, and the conductive member 411 is insulated from the bottom plate 22. Further, the fixed conductor 41 further includes a screw 413, and the screw 413 is screwed on the conductive element 411. In the communication direction of the through hole 221, one end of the conductive member 411 and the screw member 413 sandwich the insulating member 50 therebetween. Since a portion of the insulating member 50 is parallel to the bottom plate 22, the portion of the insulating member 50 abuts against the bottom plate 22 under clamping action, so that the position of the fixed conductor 41 relative to the bottom plate 22 is kept fixed and insulated from the bottom plate 22.

In some embodiments, as shown in connection with fig. 5, the biasing device 10 includes a seal 60. In one embodiment, the seal 60 is held against between the main lumen assembly 20 and the insulator 50. Specifically, the sealing member 60 is annular and disposed around the edge of the through-hole 221. Part of the surface of one of the insulating members 50 faces the outer side of the bottom plate 22, and the sealing member 60 is abutted between the surface of the insulating member 50 and the outer side of the bottom plate 22, so that external air is prevented from entering the inner cavity 201 through the edge between the insulating member 50 and the bottom plate 22, and the vacuum degree of the inner cavity 201 is ensured. In one embodiment, the seal 60 is held between the fixed conductor 41 and the insulator 50. Specifically, an outer end 412 of the conductive member 411 is exposed out of the bottom plate 22. A portion of the insulator 50 is between the outer end 412 of the conductive member 411 and the bottom plate 22. One of the sealing members 60 abuts between the outer end 412 of the conductive member 411 and a corresponding portion of the insulating member 50, thereby preventing external air from entering the cavity 201 through the edge between the insulating member 50 and the conductive member 411.

In some embodiments, as shown in connection with fig. 5, an external cable is connected between the conductive member 411 and the negative electrode of the bias power supply. Specifically, the conductive member 411 is hollow and can pass through the electrical interface member 44, and the electrical interface member 44 can fix one end of an external cable to the outer end 412 of the conductive member 411.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.

Claims (10)

1. A biasing device, comprising:

a main cavity component provided with an inner cavity; a part of the space of the inner cavity forms a processing station capable of accommodating a carrier;

the bias plate is connected to the main cavity assembly and arranged on one side of the processing station; and

the conducting assembly is electrically connected between the bias plate and a bias power supply.

2. The biasing apparatus as defined in claim 1, wherein the number of conductive elements is at least two; a space is provided between the conduction point of one of the conduction components and the conduction point of the other conduction component.

3. The biasing apparatus as defined in claim 1, wherein the conductive assembly comprises a stationary conductor, a compliant conductor, and a shield; the fixed conductor is connected to the main cavity assembly; the plastic conductor is electrically connected between the fixed conductor and the bias plate; wherein the electrical connection point between the plastic conductor and the bias plate is surrounded by the shield, and/or the electrical connection point between the plastic conductor and the fixed conductor is surrounded by the shield.

4. The biasing device of claim 3, comprising an insulator disposed between the stationary conductor and the main lumen assembly.

5. The biasing device of claim 4, wherein the biasing device comprises a seal; the sealing element is abutted between the main cavity assembly and the insulating element, and/or the sealing element is abutted between the fixed conductor and the insulating element.

6. The biasing apparatus as defined in claim 1, wherein the biasing plate has a length greater than or equal to a length of the process station; the width of the bias plate is greater than or equal to the width of the processing station.

7. The biasing device of claim 1, wherein an outward region of the biasing plate is covered with an insulating coating.

8. The biasing apparatus of claim 1, wherein the relative distance between the biasing plate and the processing station is between 3mm and 200mm.

9. A substrate processing apparatus comprising the biasing device according to any one of claims 1 to 8.

10. The substrate processing apparatus of claim 9, further comprising a plasma generating device coupled to the main chamber assembly; the processing station is between the plasma generating device and the bias plate.

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