CN215865490U - Ultrafast high-resolution parallel reading single photon detector - Google Patents
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Abstract
The utility model relates to an ultrafast high-resolution parallel-reading single photon detector, which aims to solve the problems that the existing position-sensitive anode detector is low in spatial resolution and cannot process overlapping events. The detector comprises a shell casing, an input window with a photoelectric cathode, a micro-channel plate assembly, a semiconductor anode assembly and an image processing unit. The semiconductor anode assembly includes a pixel charge collection electrode, pixel charge readout electronics, an insulating substrate, and a lead electrode; the pixel charge readout electronic device comprises a plurality of pixel charge readout units arranged in an array, the pixel charge collection electrode comprises a plurality of pixel sensitive units arranged in an array, and the pixel sensitive units are pixelized single sheets; each pixel charge reading unit is connected with one end of a corresponding lead electrode, and the other end of the lead electrode penetrates through the insulating substrate and is connected with the image processing unit.
Description
Technical Field
The utility model relates to the field of low-light-level detection and imaging, in particular to an ultrafast high-resolution parallel-reading single photon detector.
Background
In recent years, the weak signal detection imaging technology under the low illumination condition is a hot spot of disputed research in all countries in the world by virtue of its wide application background, and instruments and devices related to the weak signal detection imaging technology are also indispensable research tools and means in advanced science and advanced fields, and a position-sensitive anode detector based on a microchannel plate (MCP) is one of them.
A position-sensitive anode detector based on a micro-channel plate (MCP) converts weak light signals into electric signals for amplification, the electric signals are read out through a position-sensitive anode with two-dimensional position resolution, the detected photon number reflects the intensity of target signals, and the spatial resolution of the position-sensitive anode determines the resolution of images. The potential sensitive anode can be divided into an impedance type anode, a charge division type anode, a delay line anode and a cross anode according to different decoding modes. The impedance type anode limits the spatial resolution of the detector due to the influence of thermal charge noise, the limited anode division number of the charge division type anode, the serious inter-electrode crosstalk of the delay line anode and other factors, and the potential sensitive anode device can only process one event at a time and cannot record the simultaneous events.
Chinese patent application No. 201320307734.5 discloses a cross position-sensitive anode and a detection system suitable for a microchannel plate detector, in which the receiving anode is composed of rectangular cross conductive strips orthogonal to each other, each rectangular conductive strip independently outputs a charge signal, and the signal of each discrete electrode strip needs to be led out through an insulating substrate by a lead wire. With the increase of the detection area, the number of leads becomes huge, and correspondingly, the reading circuit also becomes huge and complicated, so that the number of reading channels is limited, only a small number of simultaneous events can be detected, and the spatial resolution of the detector is reduced. In addition, overlapping events within the charge collection and signal processing time cannot be decoded either, resulting in a drop in detector count rate.
SUMMERY OF THE UTILITY MODEL
In order to solve the problems that the existing position-sensitive anode detector is low in spatial resolution and cannot process overlapping events, the utility model provides an ultrafast high-resolution parallel-reading single photon detector.
In order to achieve the purpose, the technical scheme adopted by the utility model is as follows:
an ultrafast high-resolution parallel-reading single photon detector comprises a shell, an input window, a micro-channel plate assembly, a semiconductor anode assembly and an image processing unit; the input window and the semiconductor anode assembly are respectively arranged at openings at two ends of the shell of the tube shell to form a vacuum sealing cavity; a photoelectric cathode is arranged on the inner side of the input window; the microchannel plate assembly is arranged in the vacuum sealing cavity; it is characterized in that:
the semiconductor anode assembly includes a pixel charge collection electrode, pixel charge readout electronics, an insulating substrate, and a lead electrode;
the insulating substrate is hermetically connected with the shell and shell;
the pixel charge readout electronic device is arranged on the inner side of the insulating substrate and comprises a plurality of pixel charge readout units arranged in an array;
the pixel charge collecting electrode is arranged at the inner side of the pixel charge readout electronic device and comprises a plurality of pixel sensitive units arranged in an array; the image sensing unit is a pixilated single chip;
each image sensing unit is connected with a corresponding pixel charge reading unit through a bump solder ball; each pixel charge reading unit is connected with one end of a corresponding lead electrode, and the other end of the lead electrode penetrates through the insulating substrate and is connected with the image processing unit.
Further, the pixel charge readout unit includes an analog circuit and a digital circuit connected in sequence;
the analog circuit comprises a charge sensitive amplifying circuit and a comparator; the charge sensitive amplifying circuit is used for integrating the charges collected by the image sensing unit to obtain the charge quantity; the comparator is used for comparing the charge quantity with a threshold value to obtain a voltage pulse exceeding the threshold value, and the width of the voltage pulse is in direct proportion to the collected charge quantity;
the digital circuit comprises a synchronous control logic circuit, a counter, a high-precision clock and a pixel reading circuit; the synchronous control logic circuit generates a trigger signal according to the voltage pulse of the comparator, and when the trigger signal is effective, the counter counts the voltage pulse time information output by the comparator according to the high-precision clock; the pixel readout circuit is used for reading the counting result and outputting the counting result to the image processing unit.
Further, the image processing unit comprises at least one interface board, a digital processing board and a PC computer;
the input end of the interface board is connected with the lead electrode and is used for converting the digital signal output by the pixel charge readout unit into a low-voltage differential signal and transmitting the low-voltage differential signal to the digital processing board;
the digital processing board is used for reconfiguring the low-voltage differential signals and transmitting the low-voltage differential signals to a PC computer through an Ethernet interface for imaging.
Further, the pixelated monolithic is a silicon, gallium arsenide, or cadmium telluride monolithic;
the pixel charge collection electrode comprises N x N image sensing cells;
the bump solder ball is made of brazing filler metal.
Further, the tube shell comprises an indium seal ring, a first ceramic ring, an MCP input electrode ring, a second ceramic ring, an MCP output electrode ring, a third ceramic ring and an anode seal ring which are coaxially and sequentially connected;
an indium seal groove is formed in the indium seal ring, and the input window is fixed in the indium seal groove;
the micro-channel plate assembly is arranged between the MCP input electrode ring and the MCP output electrode ring, and an MCP pressure ring is arranged between the input surface of the micro-channel plate assembly and the MCP input electrode ring;
the insulating substrate is fixedly connected with the anode sealing ring through the anode positioning sealing ring.
Further, the distance between the cathode surface of the photocathode and the input surface of the microchannel plate assembly is 0.1-0.2 mm;
the microchannel plate assembly comprises a single microchannel plate, two microchannel plates in a V-shaped cascade connection or three microchannel plates in a Z-shaped cascade connection.
Furthermore, the material of the input window is an optical fiber panel, quartz, magnesium fluoride or K9 glass;
the photocathode is an S20 cathode, an S25 cathode, a CsTe cathode or a metal cathode.
Compared with the prior art, the utility model has the beneficial effects that:
(1) according to the ultrafast high-resolution parallel-reading single photon detector, due to the combined design of the pixel charge collecting electrode and the pixel charge reading electronic device in the semiconductor anode assembly, each pixel sensitive unit and the corresponding pixel charge reading unit form an independent counter, the GHZ rate can be achieved in an event counting mode, and the high-resolution parallel-reading single photon detector has higher counting capacity. The detector can detect multiple events occurring simultaneously, encoded directly by pixel charge readout electronics, read out in parallel, and can detect 10 events at a time4The above events.
(2) The charge sensitive amplification circuit in the pixel charge readout unit has a relatively low noise level (typically 75e-rms) of about 104The output charge value of each electron is enough to perform low-noise detection on a single particle, and the output noise is 10-1000 times lower than that of a WSA anode and delay-line anode detector. The low-noise pixel charge reading unit greatly reduces the gain of the micro-channel plate required by the incident particles, the reduction of the gain enables the local counting capacity of the detector to be obviously improved, and the service life of the micro-channel plate assembly is prolonged.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of an ultrafast high-resolution parallel readout single photon detector of the present invention (image processing unit not shown);
in the figure, 1-package housing, 11-indium seal ring, 12-first ceramic ring, 13-MCP input electrode ring, 14-second ceramic ring, 15-MCP output electrode ring, 16-third ceramic ring, 17-anode seal ring, 18-anode positioning seal ring, 2-input window, 3-photocathode, 4-microchannel plate assembly, 5-semiconductor anode assembly, 51-pixel charge collection electrode, 52-bump solder ball 53-pixel charge readout electronics, 54-insulating substrate, 55-lead electrode.
FIG. 2 is a schematic diagram of the principle of detection using the ultrafast high-resolution parallel readout single photon detector of the present invention.
Detailed Description
To make the objects, advantages and features of the present invention clearer, a ultrafast high-resolution parallel-readout single photon detector according to the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
As shown in FIG. 1, the ultrafast high-resolution parallel-readout single photon detector provided by the utility model comprises a shell-and-tube shell 1, an input window 2, a microchannel plate assembly 4, a semiconductor anode assembly 5 and an image processing unit. The input window 2 and the semiconductor anode assembly 5 are respectively arranged at openings at two ends of the shell 1 to form a vacuum sealed cavity with a vacuum degree of 10-6Of the order of Pa. The inner side of the input window 2 is provided with a photocathode 3, and a microchannel plate assembly 4 is arranged in the vacuum-sealed cavity and is positioned between the photocathode 3 and a semiconductor anode assembly 5.
Specifically, the tube-in-case housing 1 includes an indium seal ring 11, a first ceramic ring 12, an MCP input electrode ring 13, a second ceramic ring 14, an MCP output electrode ring 15, a third ceramic ring 16, and an anode seal ring 17, which are coaxially connected in this order.
An indium seal groove is formed in the indium seal ring 11, and the input window 2 is hermetically fixed in the indium seal groove. The material of the input window 2 is fiber panel, quartz, magnesium fluoride or K9 glass. The photocathode 3 is an S20 cathode, an S25 cathode, a CsTe cathode or a metal cathode, and can be selected according to the wavelength of the detector. The insulating substrate 54 of the photocathode 3 isWith 95% Al2O3A ceramic.
The microchannel plate assembly 4 is mounted between the MCP input electrode ring 13 and the MCP output electrode ring 15, and an MCP pressure ring is provided between the input face of the microchannel plate assembly 4 and the MCP input electrode ring 13. The distance between the cathode surface of the photocathode 3 and the input surface of the microchannel plate assembly 4 is 0.1-0.2 mm. The microchannel plate assembly 4 comprises a single microchannel plate, two microchannel plates in a V-shaped cascade connection or three microchannel plates in a Z-shaped cascade connection, and the plurality of cascaded microchannel plates are mainly used for improving the gain of the detector.
The semiconductor anode assembly 5 includes a pixel charge collection electrode 51, pixel charge readout electronics 53, an insulating substrate 54, and lead electrodes 55.
95% Al is used for the insulating substrate 542O3The ceramic is welded and fixed with the anode sealing ring 17 through the anode positioning sealing ring 18. The pixel charge readout electronics 53 are disposed inside the insulating substrate 54 and include N × N pixel charge readout units arranged in an array. The pixel charge collection electrode 51 is disposed inside the pixel charge readout electronics 53, and includes N × N pixel-sensitive cells arranged in an array, where the pixel-sensitive cells are in the form of a micron-sized pixelated monolithic (silicon, gallium arsenide, or cadmium telluride monolithic). Each image sensing element is connected to a corresponding pixel charge readout element by bump-bumps 52(bump-bonds balls), i.e. bonded together by a solder material. Each pixel charge readout unit is connected to one end of a corresponding lead electrode 55, and the other end of the lead electrode 55 penetrates through the insulating substrate 54 and is connected to the image processing unit. Each image sensing unit and the corresponding pixel charge reading unit form an independent counter, and the counter can be used for metering an object to be detected, counting photon energy or calculating detected quantum time.
The distance between the output face of the microchannel plate assembly 4 and the pixel charge collection electrode 51 of the semiconductor anode assembly 5 and the electric field between them determine the charge distribution between several pixels. At the output face of the microchannel plate assembly 4, the charge is typically in the range of about 6-30 microns, enabling event encoding with 1-2 pixel accuracy.
The pixel charge readout unit is an electronic chip that integrates an analog circuit and a digital circuit. The analog circuit comprises a charge sensitive amplifying circuit and a comparator, wherein the charge sensitive amplifying circuit is used for integrating charges collected by the photosensitive unit to obtain a charge amount, the comparator is used for comparing the charge amount with a threshold value to obtain a voltage pulse exceeding the threshold value, and the width of the voltage pulse is in direct proportion to the collected charge amount. The digital circuit comprises a synchronous control logic circuit, a counter, a high-precision clock and a pixel reading circuit, wherein the synchronous control logic circuit generates a trigger signal according to the voltage pulse of the comparator, when the trigger signal is effective, the counter counts the voltage pulse time information output by the comparator according to the high-precision clock, and the pixel reading circuit is used for reading a counting result and outputting the counting result to the image processing unit.
The image processing unit includes at least one interface board, a digital processing board and a PC computer.
The interface board is a field programmable gate array board, and the input end of the interface board is connected to the lead electrode 55, and is used for converting the CMOS digital signal output by the pixel charge readout unit into a Low Voltage Differential Signal (LVDS) and transmitting the LVDS to a digital processing board (FPGA board) through a coaxial cable. The digital processing board is used for reconfiguring the low-voltage differential signals and transmitting the low-voltage differential signals to a PC computer through a Gb Ethernet interface for imaging.
The ultrafast high-resolution parallel readout single photon detector is used for glimmer detection and imaging, the principle of the detector is shown in figure 2, and the method specifically comprises the following steps:
1) the incident photons enter an input window 2 of the detector and are converted into electrons through a photocathode 3;
2) electrons are accelerated to enter the micro-channel plate component 4 under the action of an external electric field formed by the photocathode 3 and the semiconductor anode component 5; the microchannel plate multiplies electrons to form high-energy electrons;
3) under the constraint of an external electric field, high-energy electrons bombard the upper pixel charge collecting electrode 51 to generate electron-hole pairs, and the electrons or the holes are collected by the adjacent pixel charge collecting electrode 51 and are bonded to the lower pixel charge reading electronic device 53 through the bump solder balls 52;
4) each pixel charge readout unit of the pixel charge readout electronics 53 photon counts the pixel charge and reads the entire image at the KHZ/frame rate;
4.1) the charge sensitive amplifying circuit of each pixel charge reading unit integrates the charges collected by the corresponding image sensitive unit to obtain the charge amount;
4.2) comparing the charge quantity with a threshold value of a comparator to obtain a voltage pulse which exceeds the threshold value and has a width proportional to the charge quantity;
4.3) when the trigger signal of the synchronous control logic circuit is effective, the counter counts the voltage pulse time information output by the comparator according to the high-precision clock;
4.4) the pixel reading circuit reads the counting result and outputs the counting result to the image processing unit;
5) the counting result is transmitted to an image processing unit outside the vacuum through the lead electrode 55 for processing and imaging;
5.1) the counting result is transmitted to an interface board through a lead electrode 55, and the interface board converts the received digital signal into a low-voltage differential signal and transmits the low-voltage differential signal to a digital processing board;
and 5.2) the digital processing board reconfigures the low-voltage differential signal and transmits the low-voltage differential signal to a PC computer for imaging through an Ethernet interface.
Higher microchannel plate gain results in charge spreading over several pixels, which increases detection efficiency as more low gain events occur above the readout threshold, thereby increasing the count rate of the detector. But a higher microchannel plate gain results in a larger electron cloud area impinging on the pixel charge collection electrode 51, thereby reducing the spatial resolution of the detector. Therefore, the microchannel plate gain and semiconductor anode readout threshold (comparator threshold) levels should be adjusted between high count rate and high spatial resolution modes of operation. At the same time, the duration acquisition frame needs to be adjusted for a given input event rate to prevent overlapping of events within a single frame.
Claims (7)
1. An ultrafast high-resolution parallel-reading single photon detector comprises a shell case (1), an input window (2), a micro-channel plate assembly (4), a semiconductor anode assembly (5) and an image processing unit; the input window (2) and the semiconductor anode assembly (5) are respectively arranged at openings at two ends of the shell casing (1) to form a vacuum sealing cavity; a photoelectric cathode (3) is arranged on the inner side of the input window (2); the microchannel plate assembly (4) is arranged in the vacuum sealing cavity; the method is characterized in that:
the semiconductor anode assembly (5) comprises a pixel charge collection electrode (51), pixel charge readout electronics (53), an insulating substrate (54) and a lead electrode (55);
the insulating substrate (54) is hermetically connected with the shell and shell (1);
the pixel charge readout electronics (53) are arranged inside the insulating substrate (54) and comprise a plurality of pixel charge readout units arranged in an array;
the pixel charge collection electrode (51) is arranged inside the pixel charge readout electronics (53) and comprises a plurality of image sensing units arranged in an array; the image sensing unit is a pixilated single chip;
each image sensing unit is connected with a corresponding pixel charge reading unit through a bump solder ball (52); each pixel charge readout unit is connected with one end of a corresponding lead electrode (55), and the other end of the lead electrode (55) penetrates through the insulating substrate (54) and is connected with the image processing unit.
2. The ultrafast high resolution parallel readout single photon detector of claim 1, wherein: the pixel charge readout unit comprises an analog circuit and a digital circuit which are connected in sequence;
the analog circuit comprises a charge sensitive amplifying circuit and a comparator; the charge sensitive amplifying circuit is used for integrating the charges collected by the image sensing unit to obtain the charge quantity; the comparator is used for comparing the charge quantity with a threshold value to obtain a voltage pulse exceeding the threshold value, and the width of the voltage pulse is in direct proportion to the collected charge quantity;
the digital circuit comprises a synchronous control logic circuit, a counter, a high-precision clock and a pixel reading circuit; the synchronous control logic circuit generates a trigger signal according to the voltage pulse of the comparator, and when the trigger signal is effective, the counter counts the voltage pulse time information output by the comparator according to the high-precision clock; the pixel readout circuit is used for reading the counting result and outputting the counting result to the image processing unit.
3. The ultrafast high resolution parallel readout single photon detector of claim 2, wherein: the image processing unit comprises at least one interface board, a digital processing board and a PC computer;
the input end of the interface board is connected with a lead electrode (55) and is used for converting the digital signal output by the pixel charge readout unit into a low-voltage differential signal and transmitting the low-voltage differential signal to the digital processing board;
the digital processing board is used for reconfiguring the low-voltage differential signals and transmitting the low-voltage differential signals to a PC computer through an Ethernet interface for imaging.
4. The ultrafast high-resolution parallel-readout single photon detector according to any one of claims 1 to 3, wherein: the pixilated monolithic is a silicon, gallium arsenide or cadmium telluride monolithic;
the pixel charge collection electrode (51) comprises N x N image sensitive cells;
the bump solder balls (52) are made of solder.
5. The ultrafast high resolution parallel readout single photon detector of claim 4, wherein: the tube shell (1) comprises an indium seal ring (11), a first ceramic ring (12), an MCP input electrode ring (13), a second ceramic ring (14), an MCP output electrode ring (15), a third ceramic ring (16) and an anode seal ring (17) which are coaxially connected in sequence;
an indium seal groove is formed in the indium seal ring (11), and the input window (2) is fixed in the indium seal groove;
the microchannel plate assembly (4) is arranged between the MCP input electrode ring (13) and the MCP output electrode ring (15), and an MCP pressure ring is arranged between the input surface of the microchannel plate assembly (4) and the MCP input electrode ring (13);
the insulating substrate (54) is fixedly connected with the anode sealing ring (17) through the anode positioning sealing ring (18).
6. The ultrafast high resolution parallel readout single photon detector of claim 5, wherein: the distance between the cathode surface of the photocathode (3) and the input surface of the micro-channel plate component (4) is 0.1-0.2 mm;
the microchannel plate assembly (4) comprises a single microchannel plate, two microchannel plates in V-shaped cascade connection or three microchannel plates in Z-shaped cascade connection.
7. The ultrafast high resolution parallel readout single photon detector of claim 6, wherein: the material of the input window (2) is an optical fiber panel, quartz, magnesium fluoride or K9 glass;
the photoelectric cathode (3) is an S20 cathode, an S25 cathode, a CsTe cathode or a metal cathode.
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| CN113532640A (en) * | 2021-07-06 | 2021-10-22 | 中国科学院西安光学精密机械研究所 | Ultrafast high-resolution parallel-reading single photon detector and detection method |
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