CN215856445U - Heat preservation device in czochralski method monocrystalline silicon production - Google Patents

Abstract

The utility model discloses a heat preservation device in czochralski method monocrystalline silicon production, which comprises a heat preservation cylinder main body (1), wherein the heat preservation cylinder main body (1) comprises an outer cylinder body (1 a) and an inner cylinder body (1 b) which are matched with each other, the outer cylinder body (1 a) is sleeved outside the inner cylinder body (1 b), an annular cavity (2) is formed between the outer cylinder body and the inner cylinder body, the bottom of the annular cavity (2) is connected with an annular bottom plate (3) with one surface matched with each other, a group of baffle holes (4) are arranged on the annular bottom plate (3), each baffle hole (4) comprises a group of baffle holes (4 a), each group of baffle holes (4 a) is correspondingly connected with a vertical baffle (5), and the width of each baffle (5) is matched with the thickness of the annular cavity (2). The utility model has the advantages of effectively preserving the temperature in the furnace, reducing the temperature gradient in the silicon liquid and creating a good growth environment for the growth of the single crystal.

Description

Heat preservation device in czochralski method monocrystalline silicon production

Technical Field

The utility model relates to the technical field of monocrystalline silicon production equipment by a Czochralski method, in particular to a heat preservation device in the production of monocrystalline silicon by the Czochralski method.

Background

In the process of producing monocrystalline silicon by the czochralski method, the brief process is that raw materials are firstly put into a quartz crucible in a monocrystalline furnace, argon is introduced after the furnace body is sealed, the gas in the monocrystalline furnace is pumped out of the monocrystalline furnace by a dry pump, a material block is heated to about 1400 ℃ by a heater to be melted, the growth process of the crystal is completed through operations of seeding, shouldering, shoulder rotating, diameter equalizing, ending and the like, and finally the heater is closed and is stopped for cooling.

In the whole crystal pulling process, a large amount of heat energy is taken away by condensed water in a furnace body in a heat conduction and heat radiation mode, and an existing heat preservation felt and a heat preservation cylinder are generally fixed into a whole in a roll-up mode, so that the heat is dissipated in a heat transmission mode, the heat preservation performance of a thermal field is reduced, a large amount of heat energy is wasted, the temperature in the furnace cannot be preserved, the temperature gradient in silicon liquid is increased, and the normal growth of monocrystalline silicon is influenced.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the problems of heat energy waste, heat preservation incapability and easy abnormity of monocrystalline silicon growth in the conventional monocrystalline silicon production, and provides a heat preservation device in the monocrystalline silicon production by the czochralski method, which can effectively preserve the temperature in a furnace, reduce the temperature gradient in silicon liquid and create a good growth environment for monocrystalline growth.

In order to achieve the purpose, the utility model adopts the following technical scheme:

the utility model provides a heat preservation device in czochralski method monocrystalline silicon production, including a heat preservation section of thick bamboo main part, a heat preservation section of thick bamboo main part is including the outer barrel and the interior barrel of mutually supporting, the outside of barrel is established to outer barrel cover in, and form an annular cavity between the two, annular cavity's bottom even has one side matched with annular bottom plate, be equipped with a set of baffle volleyball on the annular bottom plate, every baffle volleyball includes a set of baffle hole, correspond on every baffle hole and connect a vertical baffle, the width of baffle cooperatees with annular cavity's thickness, so that be used for cutting apart every layer of graphite felt, thereby reduce the heat of heat transfer loss.

Further, the axis of the outer cylinder and the axis of the inner cylinder are coincident with each other.

Furthermore, the baffle plate row holes are uniformly distributed on the annular bottom plate at equal intervals.

Furthermore, the connecting lines of each group of baffle holes are intersected at the circle center of the annular bottom plate.

Further, the baffle hole array is eight, and each baffle hole array comprises five baffle holes.

Compared with the prior art, the utility model has the advantages that:

(1) the device can mount the graphite felt layer by layer, greatly reduces the heat loss in a heat transfer mode, reduces the temperature gradient in a thermal field, reduces the electric energy consumption on one hand, and improves the productivity of the single crystal silicon rod on the other hand;

(2) the furnace has good heat preservation effect on the temperature in the furnace, thereby effectively saving electric energy, reducing the crystal pulling cost, reducing the temperature gradient of silicon liquid in the furnace and creating a good growth environment for the growth of crystals.

Drawings

FIG. 1 is a structural view of a heat retaining device in the production of single crystal silicon by the Czochralski method of the present invention;

FIG. 2 is a top view of an insulating apparatus for use in the production of single crystal silicon by the Czochralski method of the present invention;

FIG. 3 is a perspective view of an insulating apparatus for use in the production of single crystal silicon by the Czochralski method of the present invention;

FIG. 4 is a perspective view of a baffle of the present invention;

FIG. 5 is a schematic view showing the assembly of the holding apparatus of the present invention with a crucible.

Detailed Description

Example 1

In order to make the utility model more clear, the following further describes the heat preservation device in the production of the czochralski silicon crystal according to the utility model with reference to the attached drawings, and the specific embodiments described herein are only used for explaining the utility model and are not used for limiting the utility model.

Referring to fig. 1-3, a heat preservation device in czochralski method monocrystalline silicon production, includes a heat preservation section of thick bamboo main part 1, its characterized in that:

the heat preservation cylinder main body 1 comprises an outer cylinder body 1a and an inner cylinder body 1b which are matched with each other, the outer cylinder body 1a is sleeved outside the inner cylinder body 1b, and the axis of the outer cylinder body 1a is superposed with the axis of the inner cylinder body 1 b;

an annular cavity 2 is formed between the outer cylinder body 1a and the inner cylinder body 1b, the bottom of the annular cavity 2 is connected with an annular bottom plate 3 with one matched surface, eight baffle row holes 4 are formed in the annular bottom plate 3, each baffle row hole 4 comprises five baffle holes 4a, the baffle row holes 4 are uniformly distributed on the annular bottom plate 3 at equal intervals, and the connecting lines of each baffle hole 4a are intersected at the circle center of the annular bottom plate 3;

referring to fig. 1-3 and 4, each group of baffle holes 4a is correspondingly connected with a vertical baffle 5, and the width of the baffle 5 is matched with the thickness of the annular cavity 2 so as to divide each layer of graphite felt and reduce heat loss due to heat transfer.

Referring to fig. 5, the apparatus of the present invention may be installed as shown in fig. 5, wherein a is a crucible side, B is a crucible support, C is a support rod, and D is a thermal insulation apparatus of the present invention, the thermal insulation apparatus separates the inside from the outside of the thermal field, the thermal field reaches the inner wall of the thermal insulation apparatus, and is separated from the thermal insulation felt layer by the thermal insulation felt, so that heat energy is greatly reduced from being dissipated by heat transfer, the temperature inside the thermal field is slowly dissipated, the temperature gradient of the thermal field is small, a good growth environment is provided for single crystal growth, and the power consumption is reduced, thereby achieving reduction of single crystal manufacturing cost.

In addition to the above embodiments, the present invention may have other embodiments. All technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the protection scope of the claims of the present invention.

Claims (5)

1. The utility model provides a heat preservation device in czochralski method monocrystalline silicon production, includes a heat preservation section of thick bamboo main part (1), its characterized in that:

a heat preservation section of thick bamboo main part (1) is including outer barrel (1 a) and interior barrel (1 b) of mutually supporting, the outside of barrel (1 b) is established to outer barrel (1 a) cover, and form one toroidal cavity (2) between the two, the bottom of toroidal cavity (2) even has one side matched with annular bottom plate (3), be equipped with a set of baffle winding displacement (4) on annular bottom plate (3), every baffle winding displacement (4) are including a set of baffle hole (4 a), correspond on every baffle hole of group (4 a) and connect a vertical baffle (5), the width of baffle (5) cooperatees with the thickness of toroidal cavity (2).

2. The heat insulating apparatus in production of single crystal silicon by the Czochralski method according to claim 1, wherein:

the axial line of the outer cylinder body (1 a) and the axial line of the inner cylinder body (1 b) are superposed with each other.

3. The heat-insulating apparatus in production of single-crystal silicon by the Czochralski method according to claim 1 or 2, characterized in that:

the baffle plate row holes (4) are uniformly distributed on the annular bottom plate (3) at equal intervals.

4. The heat insulating apparatus in production of single crystal silicon by the Czochralski method according to claim 3, wherein:

the connecting lines of each group of baffle holes (4 a) are all intersected at the circle center of the annular bottom plate (3).

5. The heat-insulating apparatus in production of single-crystal silicon by the Czochralski method according to claim 1 or 2, characterized in that:

eight baffle holes (4) are arranged, and each baffle hole (4) comprises five baffle holes (4 a).

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