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CN215773046U - Probe row structure for detecting local defects of multi-main-grid solar cell - Google Patents

Probe row structure for detecting local defects of multi-main-grid solar cell Download PDF

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CN215773046U
CN215773046U CN202121412671.0U CN202121412671U CN215773046U CN 215773046 U CN215773046 U CN 215773046U CN 202121412671 U CN202121412671 U CN 202121412671U CN 215773046 U CN215773046 U CN 215773046U
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probe
solar cell
series
main grid
pins
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田甲
张伟
崔宁
郝鹏飞
徐国栋
王裕
褚君凯
贾慧君
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Jinneng Photovoltaic Technology Co Ltd
Jinneng Clean Energy Technology Ltd
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Jinneng Photovoltaic Technology Co Ltd
Jinneng Clean Energy Technology Ltd
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Abstract

The utility model provides a probe row structure for detecting local defects of a multi-main grid solar cell, wherein the solar cell is provided with N main grids, and N is more than 1; the probe row structure comprises a plurality of probe rows, and the probe rows are in contact with the main grids at corresponding positions; each row of the probe row is connected with a constant value resistor with the same resistance value, one end of the probe row is connected in series to one electrode of a power supply through the constant value resistor, and the other electrode of the power supply is electrically connected to the other end of the probe row. The utility model can enable the external current to be injected into the solar cell more uniformly, is less influenced by the non-uniform performance of the solar cell, can effectively avoid the condition of missed judgment caused by the fact that the edge abnormal area is not displayed, thereby improving the detection capability of the local defect, simultaneously reducing the number of the probe rows, simplifying the integral structure of the probe rows by the electric connection structure of the probes, and reducing the cost.

Description

Probe row structure for detecting local defects of multi-main-grid solar cell
Technical Field
The utility model relates to the technical field of solar cells, in particular to a probe row structure for detecting local defects of a multi-main-grid solar cell.
Background
With the continuous development of the industry, the photovoltaic industry is increasingly competitive, and low cost and high efficiency become targets to be pursued together. Especially, when the bottleneck stage occurs at high efficiency, the low cost is very important. Lower costs include not only the silicon wafer and amorphous silicon costs traditionally taught, but also control of fine fabrication and control of accurate testing.
After the solar cell is sintered into a finished product through screen printing, defect screening needs to be carried out on the cell. The presence of recombination centers, which are defects in solar cells, can shorten the diffusion length of minority carriers and make the electroluminescence intensity dark, so that an Electroluminescence (EL) detection device is widely used for defect detection of solar cells.
The EL detection principle is that excess carriers are injected into a cell, the excess carriers are directly compounded to radiate infrared rays, the infrared rays radiated in a large compounded area are less, and the defects of the solar cell can be judged according to the luminous brightness after the infrared rays are received by a detector and subjected to imaging processing. The amount of current injection also affects the light-emitting brightness of the solar cell, and when the current injection is large, the light-emitting brightness is large, so that the uniformity of the current injection also affects the detection result. On the other hand, the brightness of the EL image of the solar cell is also affected by the resistance of the cell itself, uneven distribution of minority carriers lifetime, and the like. Therefore, when the existing electroluminescent equipment is used for detecting certain solar cells (such as uneven cells), better defect position resolution cannot be obtained, even the existing defects cannot be detected, the detection omission of poor cell products is caused, and the problem is brought to the subsequent manufacturing of photovoltaic modules.
The existing electroluminescent device and the related technology do not consider the influence of the nonuniformity of the cell piece on the distribution of the externally injected current on the surface of the solar cell. In the prior art, a resistor controller is added on a probe row to control the injection current, so that the misjudgment and the missed detection caused by the brightness and darkness caused by the uneven injection current are prevented. However, the metal probe row crosses over the main grid of the solar cell, so that the potential of each position area of the main grid line is further equalized, and if the inside of the solar cell is uneven along the main grid direction, carriers in the solar cell are homogenized due to the equipotential mode, so that the detection resolution of the EL test on local defects is reduced. In summary, there are some cases where some defects of the solar cell can be detected by photoluminescence (without metal probe bank) method, but are difficult to be distinguished in electroluminescence detection. Missing inspection of local defects can further cause problems for component fabrication.
Therefore, how to provide a probe row structure with higher resolution for detecting the local defect position of the solar cell panel is a problem that needs to be solved by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a probe row structure for detecting local defects of a multi-main-grid solar cell, which reduces the number of probe rows and simplifies the probe row structure on the premise of ensuring higher detection resolution of local defect positions of a solar cell panel, thereby effectively reducing the detection cost.
In order to achieve the purpose, the utility model adopts the following technical scheme:
a probe row structure for detecting local defects of a multi-main grid solar cell is disclosed, wherein the solar cell is provided with N main grids, and N is more than 1; the probe row structure comprises a plurality of probe rows, and the probe rows are in contact with the main grids at corresponding positions; each row of the probe row is connected with a constant value resistor with the same resistance value, one end of the probe row is connected in series to one electrode of a power supply through the constant value resistor, and the other electrode of the power supply is electrically connected to the other end of the probe row.
Preferably, the length of the probe row is matched with the length of a main grid of the solar cell, and each probe row comprises a plurality of independent probes;
the probes comprise current pins and voltage opening pins which are arranged at intervals; the current pins are connected in series, the current pin at the head end is connected in series to one electrode of the power supply through the constant value resistor after being connected in series, and the other electrode of the power supply is electrically connected to the current pin at the tail end; the plurality of pressure opening needles are connected in series, and the detection end is connected in series between the pressure opening needle at the head end and the pressure opening needle at the tail end after the pressure opening needles are connected in series.
Preferably, the probe rows are uniformly distributed at intervals from the 2 nd main grid to the (N-1) th main grid and are in contact with the main grids at corresponding positions.
Preferably, the resistance value of the fixed resistor is more than 10 times of the sum of the series resistance of the solar cell, the resistance of the probe and the contact resistance of the probe and the solar cell.
Preferably, the conductive film further comprises an insulating layer, a first conductive layer and a second conductive layer; the current needles and the voltage opening needles in the probe row are arranged at intervals along the same linear direction, and the insulating layer is arranged between the current needles and the voltage opening needles in a snake shape to realize the insulation between the adjacent current needles and the voltage opening needles; the first conducting layer is attached to the other side, opposite to the insulating layer, of the current pins, so that the current pins are connected in series; and the second conducting layer is attached to the other side of the pressing opening pins relative to the insulating layer, so that series connection between the pressing opening pins is realized.
Preferably, the main grid is a straight-through main grid or a plurality of independent segmented main grids.
Through the technical scheme, compared with the prior art, the utility model has the beneficial effects that:
the utility model has the advantages that the constant value resistors are connected in series, and the currents passing through all the probe rows are approximately the same. The resistance value of each constant value resistor is far more than 10 times of the sum of the series resistor of the solar cell, the probe resistor and the contact resistor of the probe and the solar cell, so that the external current can be injected into the solar cell more uniformly, and the influence of the nonuniform performance of the solar cell is small. Thereby improving the ability to detect localized defects.
The reasonable selection of the setting position of the probe row on the solar cell main grid can effectively avoid the condition that the edge abnormal area is not displayed to cause the missing judgment, simultaneously reduces the number of the probe row, and simplifies the whole structure of the probe row by the electric connection structure of the probe.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts;
FIG. 1 is a first diagram of a probe array structure according to an embodiment of the present invention;
FIG. 2 is a second diagram of a probe array structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a position of a probe row mounted on a solar cell according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating an effect of a probe row mounted on a solar cell according to an embodiment of the present invention;
FIG. 5 is a comparison graph I of EL conditions provided by an embodiment of the present invention;
FIG. 6 is a comparison of EL conditions provided by an embodiment of the present invention with FIG. two;
FIG. 7 is a comparison of EL conditions provided by an embodiment of the present invention with FIG. three;
fig. 8 is a comparison chart of static stability data of a testing machine according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The probe row structure for the local defect detection of the multi-main grid solar cell disclosed by the embodiment utilizes the EL imaging principle.
The EL imaging principle is as follows: a built-in electric field E pointing to an N region from a P region exists in the crystalline silicon PN junction, the diffusion current and the drift current of carriers are counteracted in a balanced state, and the current in the PN junction is zero. When the current of the solar cell applies forward bias, the built-in electric field intensity of a potential barrier region is weakened due to the reverse direction of the built-in electric field, the potential barrier width is reduced, the forward bias breaks the original balance of carrier diffusion movement and drift movement, the drift movement is weakened, the diffusion flow is larger than the drift flow, net diffusion flow enables electrons to move from an N region to a P region, meanwhile, holes move from the P region to the N region, and the electrons entering the P region and the holes entering the N region are unbalanced minority carriers. In a PN junction of the crystalline silicon battery, the minority carrier diffusion length is larger than the width of a potential barrier region, and in the process of compounding an unbalanced carrier and a majority carrier injected into the diffusion region, transition occurs and photons are emitted. The peak value of EL light directly compounded among energy bands of the crystalline silicon cell is about 1150nm, and a near infrared spectrum emitted under the forward bias of the crystalline silicon cell is collected by a near infrared CCD detector, so that an electroluminescence image of the solar cell is obtained.
A solar cell panel based on a probe row structure for detecting local defects of a multi-main grid solar cell is provided with N main grids 2, wherein N is more than 1. The probe row structure comprises a plurality of probe rows 3, and the probe rows 3 are in contact with the main grids 2 at corresponding positions; each row of probe banks 3 is connected with a constant value resistor with the same resistance, one end of each probe bank 3 is connected in series to one electrode of a power supply through the constant value resistor, and the other electrode of the power supply is electrically connected to the other end of each probe bank 3.
In one embodiment, the length of the probe row 3 is matched with that of the main grid 2 of the solar cell 1, and each probe row 3 comprises a plurality of independent probes;
the probes comprise current needles 4 and voltage opening needles 5 which are arranged at intervals; the plurality of current pins 4 are connected in series, the current pin 4 positioned at the head end after being connected in series is connected in series to one electrode of the power supply through a constant value resistor, and the other electrode of the power supply is electrically connected to the current pin 4 at the tail end; the plurality of pressure opening needles 5 are connected in series, and a detection end is connected in series between the pressure opening needle 5 at the head end and the pressure opening needle 5 at the tail end after the pressure opening needles are connected in series.
In one embodiment, the main grid 2 is a straight-through main grid 2 or a plurality of separate segmented main grids 2.
In this embodiment, as shown in fig. 3, the main grid on the solar cell includes a plurality of independent segmented main grids, each main grid on the solar cell is divided into two independent segmented main grids, the number of the probe rows is 4, the 4 probe rows are independent from each other, and each probe row is in contact with the main grid at a corresponding position.
In one embodiment, as shown in fig. 1-2, there are two tool configurations for the probe row 3, differing only in the configuration of the fixture.
In one embodiment, as shown in fig. 3-4, the probe rows 3 are uniformly spaced from the 2 nd main grid 2 to the N-1 st main grid 2, and contact the main grids 2 at corresponding positions.
In this embodiment, one probe row may be provided every other main grid; a plurality of main grids can be arranged at intervals, and a probe row can be arranged. The spacing interval is based on the fact that the near infrared spectrum is completely covered on the solar panel and the light and shade are clearly distinguished.
In one embodiment, the resistance value of the fixed resistor is greater than 10 times the sum of the series resistance of the solar cell 1, the resistance of the probe, and the contact resistance of the probe and the solar cell 1.
In one embodiment, further comprising an insulating layer 6, a first conductive layer 7, and a second conductive layer 8; the current pins 4 and the voltage opening pins 5 in the probe row 3 are arranged at intervals along the same linear direction, and the insulating layer 6 is arranged between the current pins 4 and the voltage opening pins 5 along a snake shape, so that the insulation between the adjacent current pins 4 and the voltage opening pins 5 is realized; the first conducting layer 7 is attached to the other side, opposite to the insulating layer 6, of the current pins 4, so that the current pins 4 are connected in series; the second conducting layer 8 is attached to the other side, opposite to the insulating layer 6, of the open-pressing pins 5, and series connection between the open-pressing pins 5 is achieved. This embodiment has simplified the circuit connection structure of probe row to increased the stability of electricity and connected, made overall structure tend to the miniaturization when having guaranteed detection capability, can not produce the interference because connection structure's wiring between the tietan town pie.
The technical effects of the utility model are explained below with reference to specific experimental data:
example (b):
Baseline:
the method comprises the steps of carrying out laser ablation treatment on a monocrystalline silicon wafer subjected to PECVD (plasma enhanced chemical vapor deposition) coating, carrying out silk-screen printing on a front electrode and a back electrode, carrying out an electric field, carrying out sintering treatment, carrying out LID (light-induced breakdown) resistance treatment, and finally testing EL (electroluminescence) for comparison and screening. 5 probe rows are selected and uniformly distributed. The EL case is shown in fig. 5, 6, and 7 as diagram (a), in which the edge anomaly region is not displayed, resulting in a miss.
Comparative example 1:
the method comprises the steps of carrying out laser ablation treatment on a monocrystalline silicon wafer subjected to PECVD (plasma enhanced chemical vapor deposition) coating, carrying out silk-screen printing on a front electrode and a back electrode, carrying out an electric field, carrying out sintering treatment, carrying out LID (light-induced breakdown) resistance treatment, and finally testing EL (electroluminescence) for comparison and screening. 4 probe rows are evenly arranged, current needles and voltage needles are arranged again, the probe rows are arranged on the 2 nd, 4 th, 6 th and 8 th main grids from the right side of the solar cell panel, and a main grid is arranged between every two adjacent probe rows. The abnormally blackened areas of the edges are clearly displayed. The EL case is shown in fig. 5, 6, and 7 as diagram (b).
The following dynamic stability data of Baseline and examples were tested using a testing machine:
as shown in table 1, the dynamic stability data of Baseline, and table 2, the dynamic stability data of comparative example, the conversion efficiency is used as the evaluation basis of the stability data, and the percentage data are shown in the table.
TABLE 1
Serial number of battery plate First test Second test Third test Extreme difference
1 22.809 22.829 22.805 0.025
2 22.741 22.719 22.712 0.030
3 22.800 22.784 22.772 0.028
4 22.781 22.772 22.782 0.010
5 22.776 22.777 22.755 0.022
6 22.639 22.628 22.622 0.017
7 22.602 22.588 22.616 0.028
8 22.609 22.627 22.609 0.018
9 22.634 22.634 22.645 0.011
10 22.596 22.618 22.596 0.022
TABLE 2
Figure BDA0003131287950000061
Figure BDA0003131287950000071
FIG. 8 is a diagram illustrating static stability data of a tester. It can be seen from the dynamic and static stability data that: the static stability data of the Baseline tester in fig. 8(a) is basically not different from the static and static data of the embodiment in fig. 8(b), and the stability of the probe row provided by the utility model to the local defect detection process of the solar cell meets the requirement.
The probe row structure for detecting the local defects of the multi-main grid solar cell provided by the utility model is described in detail, the principle and the implementation mode of the utility model are explained by applying specific examples, and the description of the examples is only used for helping to understand the method and the core idea of the utility model; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the utility model. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (6)

1. A probe row structure for local defect detection of a multi-main grid solar cell is disclosed, wherein a solar cell (1) is provided with N main grids (2), and N is more than 1; the device is characterized in that the probe row structure comprises a plurality of probe rows (3), and the probe rows (3) are contacted with the main grids (2) at corresponding positions; each row of the probe banks (3) is connected with a constant value resistor with the same resistance value, one end of each probe bank (3) is connected in series to one electrode of a power supply through the constant value resistor, and the other electrode of the power supply is electrically connected to the other end of each probe bank (3).
2. The probe bank structure for local defect detection of multi-main grid solar cells according to claim 1, wherein the length of the probe bank (3) is matched with the length of the main grid (2) of the solar cell (1), and each probe bank (3) comprises a plurality of independent probes;
the probes comprise current needles (4) and voltage opening needles (5) which are arranged at intervals; a plurality of current pins (4) are connected in series, the current pin (4) positioned at the head end after being connected in series is connected in series to one electrode of the power supply through the constant value resistor, and the other electrode of the power supply is electrically connected to the current pin (4) at the tail end; the plurality of pressure opening needles (5) are connected in series, and a detection end is connected in series between the pressure opening needle (5) positioned at the head end and the pressure opening needle (5) positioned at the tail end after the pressure opening needles are connected in series.
3. The probe card system structure for local defect inspection of multi-main grid solar cell according to claim 1, wherein the probe card system (3) is uniformly spaced from the 2 nd main grid (2) to the N-1 st main grid (2) and is in contact with the main grid (2) at the corresponding position.
4. The probe row structure for local defect detection of multi-master-grid solar cell according to claim 1, wherein the resistance value of the fixed resistor is more than 10 times of the sum of the series resistance of the solar cell (1), the probe resistance, and the contact resistance of the probe and the solar cell (1).
5. The probe row structure for the local defect inspection of the multi-main grid solar cell according to claim 1, further comprising an insulating layer (6), a first conductive layer (7) and a second conductive layer (8); the current pins (4) and the voltage opening pins (5) in the probe row (3) are arranged at intervals along the same linear direction, and the insulating layer (6) is arranged between the current pins (4) and the voltage opening pins (5) along a snake shape to realize the insulation between the adjacent current pins (4) and the voltage opening pins (5); the first conducting layer (7) is attached to the other side, opposite to the insulating layer (6), of the current pin (4), and the current pins (4) are connected in series; and the second conducting layer (8) is attached to the other side of the pressing opening pins (5) relative to the insulating layer (6) to realize series connection between the pressing opening pins (5).
6. The probe row structure for local defect inspection of multi-main grid solar cells according to claim 1, characterized in that the main grid (2) is a through main grid (2) or a segmented main grid (2) with several segments independent from each other.
CN202121412671.0U 2021-06-24 2021-06-24 Probe row structure for detecting local defects of multi-main-grid solar cell Active CN215773046U (en)

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