CN215497087U

CN215497087U - A single dielectric layer three-dimensional metal wall decoupling structure

Info

Publication number: CN215497087U
Application number: CN202121346238.1U
Authority: CN
Inventors: 王宜颖; 张胜妃; 王波; 覃永辉; 姜彦南; 曹卫平
Original assignee: Guilin University of Electronic Technology
Current assignee: Guilin University of Electronic Technology
Priority date: 2021-06-17
Filing date: 2021-06-17
Publication date: 2022-01-11
Anticipated expiration: 2031-06-17

Abstract

The utility model discloses a single-dielectric-layer three-dimensional metal wall decoupling structure which comprises a metal wall, a bottom plate and two radiation modules, wherein the metal wall penetrates through the bottom plate, is fixedly connected with the bottom plate and is positioned at the top of a common grounding plate, the two radiation modules are respectively fixedly connected with the bottom plate and are both positioned at the top of the bottom plate, and the two radiation modules are symmetrically arranged relative to the metal wall.

Description

Single-dielectric-layer three-dimensional metal wall decoupling structure

Technical Field

The utility model relates to the technical field of antenna decoupling, in particular to a single-dielectric-layer three-dimensional metal wall decoupling structure.

Background

As the demand for miniaturization of modern devices increases, the array structure becomes more and more compact, and the antenna elements also become more and more miniaturized, which inevitably affects the performance of the antenna. Strong mutual coupling results in reduced gain of the array elements, deteriorated patterns, etc.

In order to reduce the coupling between the antennas, the technical methods adopted at present are mainly divided into two main categories, the first category is a planar decoupling structure, for example, a defected ground structure is formed on a ground plate of the antenna by slotting so as to suppress current and realize the purpose of decoupling, and a resonant structure or a metamaterial is added between antenna units so as to suppress surface waves; the second type is a stereo decoupling structure, i.e. the original coupling is cancelled by the coupling of an extra path, so that the decoupling between the antennas is realized. However, most of these techniques at present have a problem of pattern bias.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide a single-dielectric-layer three-dimensional metal wall decoupling structure, and aims to solve the technical problem of directional diagram deviation in the prior art.

In order to achieve the above object, the decoupling structure of a single-dielectric-layer three-dimensional metal wall adopted by the present invention includes a metal wall, a bottom plate and two radiation modules, wherein the metal wall penetrates through the bottom plate, is fixedly connected with the bottom plate, and is located at the top of the bottom plate, the two radiation modules are respectively fixedly connected with the bottom plate, and are both located at the top of the bottom plate, and the two radiation modules are symmetrically arranged with respect to the metal wall.

Each radiation module comprises a radiation patch, an impedance transformer and a microstrip line, the radiation patch is fixedly connected with the top of the bottom plate and is positioned on the side face of the corresponding metal wall, one end of the impedance transformer is fixedly connected with the radiation patch and is positioned at the top end of the bottom plate, the other end of the impedance transformer is fixedly connected with the microstrip line, and the microstrip line is fixedly connected with the bottom plate and is positioned at the top of the bottom plate.

The bottom plate comprises a dielectric substrate and a public grounding plate, the dielectric substrate is fixedly connected with the metal wall and is positioned at the bottom of the metal wall, and the public grounding plate is fixedly connected with the dielectric substrate and is positioned at the bottom of the dielectric substrate.

The metal wall comprises a dielectric plate and two metal strips, the dielectric plate penetrates through the dielectric substrate and is fixedly connected with the top of the common ground plate and is located between the two radiation modules, the dielectric plate is perpendicular to the top of the bottom plate, the two metal strips are respectively fixedly connected with the dielectric plate and are respectively located on the corresponding side faces of the dielectric plate, and the two metal strips are symmetrically arranged relative to the dielectric plate.

Each metal strip comprises a first metal strip and a second metal strip, one end of each first metal strip penetrates through the dielectric substrate and is fixedly connected with the common ground plate, the other end of each first metal strip is flush with the top end of the dielectric plate, the first metal strips are located on the corresponding side faces of the dielectric plates, and the second metal strips and the first metal strips are integrally arranged, perpendicular to the first metal strips and located on the corresponding side faces of the dielectric plates.

The utility model has the beneficial effects that: on the premise of meeting the decoupling and matching requirements, the antenna impedance matching is improved, the good decoupling effect is realized, the radiation pattern of the H surface is corrected, and the actual gain of the E surface is improved, so that the problem of direction deviation in the prior art is well solved.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a single-dielectric-layer three-dimensional metal wall decoupling structure according to the present invention.

Fig. 2 is a top view of a single dielectric layer three-dimensional metal wall decoupling structure of the present invention.

Fig. 3 is a partial structural schematic view of a single dielectric layer three-dimensional metal wall decoupling structure of the utility model.

Fig. 4 is a schematic diagram of scattering parameters as a function of frequency for a decoupling-free structure, a decoupling metal wall with metal on both sides and the proposed structure of the utility model.

Fig. 5 is a far field radiation diagram of the no decoupling structure of the present invention, with metal on both sides of the decoupling metal wall and the proposed structure with the E-plane actual gain in the range of-180 deg..

Fig. 6 is a far field radiation diagram of the H-plane actual gain of the proposed structure in the range of-180 deg. with no decoupling structure, metal on both sides of the decoupling metal wall provided by the present invention.

The antenna comprises a 1-metal wall, a 2-bottom plate, a 3-radiation module, a 11-dielectric plate, a 12-metal strip, a 21-dielectric substrate, a 22-common ground plate, a 31-radiation patch, a 32-impedance transformer, a 33-microstrip line, a 121-first metal strip and a 122-second metal strip.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the utility model and are not to be construed as limiting the utility model.

In the description of the present invention, it is to be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention. Further, in the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.

Referring to fig. 1 to 4, the utility model provides a single-dielectric-layer three-dimensional metal wall decoupling structure, which includes a metal wall 1, a bottom plate 2 and two radiation modules 3, wherein the metal wall 1 penetrates through the bottom plate 2, is fixedly connected with the bottom plate 2, and is located at the top of the bottom plate 2, the two radiation modules 3 are respectively fixedly connected with the bottom plate 2, and are both located at the top of the bottom plate 2, and the two radiation modules 3 are symmetrically arranged with respect to the metal wall 1.

Further, each radiation module 3 includes a radiation patch 31, an impedance transformer 32 and a microstrip line 33, the radiation patch 31 is fixedly connected to the base plate 2 and is located on the side surface of the corresponding metal wall 1, one end of the impedance transformer 32 is fixedly connected to the radiation patch 31 and is located at the top end of the base plate 2, the other end of the impedance transformer 32 is fixedly connected to the microstrip line 33, and the microstrip line 33 is fixedly connected to the base plate 2 and is located at the top of the base plate 2.

Further, the bottom plate 2 includes a dielectric substrate 21 and a commoned ground plate 22, the dielectric substrate 21 is fixedly connected to the metal wall 1 and is located at the bottom of the metal wall 1, and the commoned ground plate 22 is fixedly connected to the dielectric substrate 21 and is located at the bottom of the dielectric substrate 21.

Further, the metal wall 1 includes a dielectric plate 11 and two metal strips 12, the dielectric plate 11 penetrates through the dielectric substrate 21 and is fixedly connected to the top of the common ground plate 22, and is located between the two radiation modules 3, the dielectric plate 11 is perpendicular to the top of the bottom plate 2, the two metal strips 12 are respectively fixedly connected to the dielectric plate 11 and are respectively located on the side surfaces of the corresponding dielectric plate 11, and the two metal strips 12 are symmetrically arranged with respect to the dielectric plate 11.

Further, each of the metal strips 12 includes a first metal strip 121 and a second metal strip 122, one end of the first metal strip 121 penetrates through the dielectric substrate 21 and is fixedly connected to the top of the commoned ground plate 22, the other end of the first metal strip 121 is flush with the top end of the dielectric plate 11, the first metal strip 121 is located on the corresponding side surface of the dielectric plate 11, and the second metal strip 122 is integrally disposed with the first metal strip 121, perpendicular to the first metal strip 121, and located on the corresponding side surface of the dielectric plate 11.

The resonant frequency of the single-dielectric-layer three-dimensional metal wall decoupling structure is 5.8GHz, the microstrip line 33 is used for feeding, and the edge-to-edge distance between the two radiation patches 31 is 2.58mm (about lambda)₀/20). The dielectric substrate 21 used was an F4B material having an effective dielectric constant of 4.4 and a loss tangent of 0.0033. The impedance transformer 32, which is a quarter-wave impedance transformer, is used for matching at the microstrip line 33 feed port. The metal wall 1 is vertically inserted into the dielectric substrate 21 between the two radiation patches 31 and connected to the common ground plane 22, and has a height of 6.4 mm. The metal wall 1 has three layers, the two metal strips 12 are separated by the dielectric plate 11, the two metal strips 12 are T-shaped, and are rotated by 90 degrees and symmetrically placed on two sides of the dielectric plate 11.

Referring to FIG. 4, the solid line represents S₁₁The dotted line represents S₂₁(ii) a The scattering parameters of the decoupling-free structure are unmarked; the solid circles are scattering parameters of metal on both sides of the decoupling metal wall 1; the scattering parameters of the proposed structure are shown with solid stars. As can be seen from the figure, if two sides are usedThe resonance frequency is shifted to 5.87GHz (no coverage of 5.80GHz) and the matching is degraded. The proposed structure improves the matching and brings the 5.80GHz within the new bandwidth. We also see that the decoupling effect of the proposed structure is more pronounced, S over the whole impedance bandwidth, than without the decoupling structure₂₁Are all lower than-20 dB, and the best decoupling effect can reach S₂₁Is-34.5 dB.

Referring to fig. 5, a solid line represents an E-plane radiation pattern without a decoupling structure, a dotted line represents an E-plane radiation pattern with metal on both sides of the decoupling metal wall 1, and the E-plane radiation pattern with a solid circle mark is the E-plane radiation pattern of the structure proposed by the present invention. It can be seen from the figure that the actual gain without the decoupling structure is 2.47dBi, the introduction of the decoupling structure increases the gain to 4.7dBi, while the introduction of the decoupling structure does not affect the direction of the maximum actual gain of the E-plane.

Referring to fig. 6, a solid line represents an H-plane radiation pattern without a decoupling structure, a dotted line represents an H-plane radiation pattern with metal on both sides of the decoupling metal wall 1, and the H-plane radiation pattern with a solid circle mark is the H-plane radiation pattern of the structure proposed by the present invention. It can be seen from the figure that if no decoupling structure is used, the peak gain is 5.3dBi, the H-plane beam is tilted 28 ° to the right patch, 20 ° to the other side if the entire metal wall is present, and the peak gain is 4.84dBi, whereas the proposed structure corrects the pattern to the edge-fire direction (0 °) back to the radiating patch 31 with a peak gain of 4.72 dBi.

In summary, on the premise of meeting the decoupling and matching requirements, the utility model not only enables the antenna impedance matching to be better, but also realizes better decoupling effect, modifies the radiation pattern of the H surface, and improves the actual gain of the E surface, thereby better solving the problem of direction deviation in the prior art.

While the utility model has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the utility model.

Claims

1. a single dielectric layer three-dimensional metal wall decoupling structure is characterized in that,

It includes a metal wall, a bottom plate and two radiating modules. The metal wall penetrates the bottom plate and is fixedly connected to the bottom plate and is located on the top of the bottom plate. The two radiation modules are respectively fixedly connected to the bottom plate, and Both are located on the top of the bottom plate, and the two radiation modules are symmetrically arranged with respect to the metal wall.

2. The single-dielectric-layer three-dimensional metal wall decoupling structure according to claim 1, wherein,

Each of the radiation modules includes a radiation patch, an impedance transformer and a microstrip line. The radiation patch is fixedly connected to the top of the bottom plate and is located on the side of the corresponding metal wall. One end is fixedly connected to the radiation patch and is located at the top of the base plate, and the other end of the impedance converter is fixedly connected to the microstrip line, and the microstrip line is fixedly connected to the base plate and is located at the bottom plate. the top of the bottom plate.

3. The single-dielectric-layer three-dimensional metal wall decoupling structure according to claim 1, wherein,

The bottom plate includes a dielectric substrate and a common ground plate, the dielectric substrate is fixedly connected to the metal wall and is located at the bottom of the metal wall, and the common ground plate is fixedly connected to the dielectric substrate and located in the medium bottom of the substrate.

4. The single-dielectric-layer three-dimensional metal wall decoupling structure according to claim 3, wherein,

The metal wall includes a dielectric plate and two metal strips, the dielectric plate penetrates the dielectric substrate and is fixedly connected with the top of the common ground plate, and is located between the two radiation modules, the dielectric plate perpendicular to the top of the bottom plate, the two metal strips are respectively fixedly connected to the dielectric plate, and are respectively located on the side of the corresponding dielectric plate, and the two metal strips are symmetrically arranged with respect to the dielectric plate .

5 . The decoupling structure for a three-dimensional metal wall with a single dielectric layer according to claim 4 , wherein each of the metal strips comprises a first metal strip and a second metal strip, and the first metal strip One end of the first metal strip penetrates through the dielectric substrate and is fixedly connected to the top of the common ground plate, the other end of the first metal strip is flush with the top of the dielectric plate, and the first metal strip is located in the corresponding On the side of the dielectric board, the second metal strip is integrally arranged with the first metal strip, is perpendicular to the first metal strip, and is located on the corresponding side of the dielectric board.