CN215281482U

CN215281482U - Sapphire convenient to come unstuck

Info

Publication number: CN215281482U
Application number: CN202120214195.5U
Authority: CN
Inventors: 来征; 简益
Original assignee: Weike Saile Microelectronics Co Ltd
Current assignee: Weike Saile Microelectronics Co Ltd
Priority date: 2021-01-26
Filing date: 2021-01-26
Publication date: 2021-12-24
Anticipated expiration: 2031-01-26

Abstract

The utility model relates to a sapphire technical field especially relates to a sapphire convenient to come unstuck, include the sapphire body and bond at the crystal at sapphire body top, the thickness of sapphire body is 700um, a plurality of through-holes have been seted up on the sapphire body, and is a plurality of through-hole evenly distributed, the diameter of through-hole is 800um, is used for solving ordinary sapphire because structural design defect, leads to sapphire and gallium arsenide crystal in the in-process of soaking acetone solution, and the separation time is longer, has prolonged the time of whole process flow, has reduced the production efficiency's of enterprise problem.

Description

Sapphire convenient to come unstuck

Technical Field

The utility model relates to a sapphire technical field especially relates to a sapphire convenient to come unstuck.

Background

The thickness of gallium arsenide crystal is generally 700um, the diameter is generally 6 inches, when making the crystal of different specifications, generally will polish the gallium arsenide crystal, when polishing, generally first coating high temperature glue on the gallium arsenide crystal, then bond the gallium arsenide crystal on the sapphire through the equipment, and the sapphire will generally be fixed through vacuum adsorption device earlier, gallium arsenide crystal and sapphire are all relatively fixed like this, then according to crystal design demand, polish the gallium arsenide crystal through polishing equipment, in the process of polishing, sapphire and gallium arsenide crystal are in high-speed rotation state, and wash water while polishing, avoid the crystal piece that polishes to splash, after polishing, again through placing gallium arsenide crystal and sapphire in acetone solution and soaking, make sapphire and crystal after polishing separate.

At present, a general sapphire is a whole, when a gallium arsenide crystal is bonded on the sapphire through a high-temperature adhesive, the thickness of the whole is increased, the highest polishing interval of a currently used polishing machine is 1800um, if the sapphire is too thick, polishing is inconvenient, after polishing is finished, the gallium arsenide crystal and the sapphire are directly placed in an acetone solution to be soaked, the time required for separating the gallium arsenide crystal and the sapphire is more than 15H, therefore, the acetone solution is generally heated to 40 ℃, the gallium arsenide crystal and the sapphire are separated in an accelerated manner, but the time required for separating the gallium arsenide crystal and the sapphire still needs about 10H, the time for separating the gallium arsenide crystal and the sapphire is longer, the time of the whole process flow is prolonged, and the production efficiency of enterprises is reduced.

SUMMERY OF THE UTILITY MODEL

In view of this, the utility model aims at providing a sapphire convenient to come unstuck for solve ordinary sapphire because structural design defect leads to sapphire and gallium arsenide crystal in the in-process of soaking acetone solution, and the separation time is longer, has prolonged the time of whole process flow, has reduced the production efficiency's of enterprise problem.

The utility model discloses an above-mentioned technical problem is solved to following technical means:

the utility model provides a sapphire convenient to come unstuck, includes the sapphire body and bonds at the gallium arsenide crystal at sapphire body top, the thickness of sapphire body is 700um, a plurality of through-holes have been seted up on the sapphire body, and are a plurality of through-hole evenly distributed, the diameter of through-hole is 800 um.

Further, adjacent two interval between the through-hole is 2 um.

Furthermore, the edges of the through holes are smooth.

Further, the sapphire body is specifically high-purity (5N) KY method sapphire single crystal sapphire.

Further, sapphire body diameter is 6.125 cun, sapphire body area locating angle, and the surface is smooth.

The utility model discloses a sapphire convenient to come unstuck, through setting up the sapphire body to 700um, avoid sapphire body and gallium arsenide crystal to pass through the high temperature glue bonding after, influence the use of the equipment of polishing; through setting up to 800um with the diameter of through-hole, because the gallium arsenide crystal is when polishing, because the gallium arsenide crystal is rotatory at high speed with the sapphire body, and polish while flushing, if the diameter of through-hole is too big, make steam get into the through-hole easily and produce the bubble, make the gallium arsenide crystal unevenness on the sapphire body, easily be got rid of and take off, if the diameter undersize of through-hole, the time that the acetone bubble was opened increases, thereby influence the separation time of gallium arsenide crystal and sapphire body, and then whole process flow's time has been prolonged, the production efficiency of enterprise has been reduced.

Drawings

Fig. 1 is a schematic structural diagram of sapphire facilitating degumming according to the present invention;

fig. 2 is a schematic view of a placement structure of sapphire and gallium arsenide crystals for facilitating degumming according to the present invention;

wherein, sapphire body 1, through-hole 11, gallium arsenide crystal 2.

Detailed Description

The invention will be described in detail with reference to the following drawings and specific embodiments:

as shown in fig. 1-2, the utility model discloses a sapphire convenient to come unstuck, including sapphire body 1 with bond at the gallium arsenide crystal 2 at sapphire body 1 top, sapphire body 1's thickness is 700um, sets up like this, because gallium arsenide crystal 2's thickness generally is 700um, and the space of polishing of equipment generally is 1800um, if sapphire body 1's thickness is too big, influences the use of equipment of polishing easily. A plurality of through-holes 11 have been seted up on sapphire body 1, 11 evenly distributed of a plurality of through-holes, the diameter of through-hole 11 is 800um, set up like this, because gallium arsenide crystal 2 is when polishing, because gallium arsenide crystal 2 and sapphire body 11 are at high-speed rotatory, and wash by water on one side of polishing, if the diameter of through-hole 11 is too big, make steam get into through-hole 11 gassing easily, make gallium arsenide crystal 2 unevenness on sapphire body 1, easily be got rid of and take off, if the diameter undersize of through-hole 11, the time that the acetone bubble was opened increases, thereby influence gallium arsenide crystal 2 and sapphire body 1's separation time, and then the time of whole process has been prolonged, the production efficiency of enterprise has been reduced.

Specifically, the interval between two adjacent through-holes 11 is 2um, set up like this, on the one hand, under the condition of guaranteeing sapphire body 1's bulk hardness, set up more through-holes 11 as far as, make sapphire body 1 place in 40 ℃ acetone solution with gallium arsenide crystal 2, acetone solution separates sapphire body 1 and gallium arsenide crystal 2 more easily, on the other hand, avoid two adjacent through-holes 11's interval undersize, lead to sapphire body 1 to appear the fracture in long-term use, influence sapphire body 1's life.

Specifically, the edge of a plurality of through-holes 11 is all slick and sly, sets up like this, avoids the water caltrop fish tail gallium arsenide crystal 2 of through-hole 11 on the one hand, and on the other hand makes vacuum adsorption device and sapphire body 1 absorbent inseparabler, avoids sapphire body 1 in long-term use, because the edges and corners of through-hole 11 reduce sapphire body 1's life.

Specifically, the sapphire body 1 is specifically a high-purity (5N) KY-method sapphire single crystal sapphire.

Specifically, sapphire body 1 diameter is 6.125 cun, sapphire body 1 area orientation angle, and the surface is smooth, set up like this, because gallium arsenide crystal 2's diameter is 6 cun, make gallium arsenide crystal 2 bonding at sapphire body 1's central authorities, when avoiding polishing, sapphire body 1 diameter is too big, damage sapphire body 1, have the orientation angle through having on sapphire body 1, the gallium arsenide crystal 2 bonding of being convenient for is on sapphire body 1, and simultaneously, also be convenient for the absorption of sapphire body 1 and vacuum adsorption device.

The utility model discloses a use method as follows: when the gallium arsenide crystal polishing device is used, the polished gallium arsenide crystal 2 and the sapphire body 1 are taken down and placed in an acetone solution, the acetone solution is in contact with the gallium arsenide crystal 2 through the through holes 11, then the acetone solution is heated to 40 ℃, after 0.5 hour, the gallium arsenide crystal 2 is separated from the sapphire body 1, and the sapphire body 1 is rapidly separated from the polished gallium arsenide crystal 2, so that the time of the whole process flow is shortened, and the production efficiency of enterprises is improved.

Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art will understand that the present invention can be modified or replaced with other embodiments without departing from the spirit and scope of the present invention, which should be construed as limited only by the appended claims. The technology, shape and construction parts which are not described in detail in the present invention are all known technology.

Claims

1. The utility model provides a sapphire convenient to come unstuck, includes sapphire body (1) and bonds gallium arsenide crystal (2) at sapphire body (1) top, its characterized in that: the thickness of sapphire body (1) is 700um, a plurality of through-holes (11) have been seted up on sapphire body (1), and is a plurality of through-hole (11) evenly distributed, the diameter of through-hole (11) is 800 um.

2. The sapphire facilitating debonding according to claim 1, wherein: two adjacent through-hole (11) between the interval be 2 um.

3. The sapphire facilitating debonding according to claim 2, wherein: the edges of the through holes (11) are smooth.

4. The sapphire facilitating debonding according to claim 3, wherein: the sapphire body (1) is specifically high-purity (5N) KY method sapphire single crystal sapphire.

5. The sapphire facilitating debonding according to claim 4, wherein: the diameter of the sapphire body (1) is 6.125 inches, and the sapphire body (1) is provided with a positioning angle and is smooth in surface.