CN214591154U - Bias voltage circuit, photoelectric detection module and oxygen partial pressure sensor - Google Patents
Bias voltage circuit, photoelectric detection module and oxygen partial pressure sensor Download PDFInfo
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 30
- 239000001301 oxygen Substances 0.000 title claims abstract description 30
- 238000001514 detection method Methods 0.000 title claims abstract description 19
- 239000003990 capacitor Substances 0.000 claims description 46
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 230000003321 amplification Effects 0.000 claims description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 9
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- 238000004364 calculation method Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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Abstract
The utility model relates to a bias voltage circuit, photoelectric detection module and oxygen partial pressure sensor, through setting up Boost circuit and reference voltage source circuit, Boost circuit and reference voltage source circuit connection, Boost circuit is used for stepping up input voltage and obtains output voltage, reference voltage source circuit is used for adjusting output voltage according to control voltage in order to obtain bias voltage, can solve the high frequency ripple that switching power supply produced, provide stable adjustable's bias voltage, make photoelectric detection module and oxygen partial pressure sensor steady operation, the gain that can also make photoelectric detection module under the temperature of difference is in a stable state all the time, with the temperature decoupling, and the circuit is simple, and is stable.
Description
Technical Field
The utility model relates to an electronic circuit technical field especially relates to a bias voltage circuit, photoelectric detection module and oxygen partial pressure sensor.
Background
A Silicon Photomultiplier (SiPM) is an array-type photoelectric conversion device composed of a plurality of avalanche photodiodes (avalanches) operating in the geiger mode. Compared with the conventional PMT (Photo multiplier tube), SiPM has a small volume, is convenient to develop into a detector array form, can operate under low bias voltage, has good magnetic field interference resistance and mechanical impact resistance, and also has the advantages of high gain, high photon detection efficiency, fast response, excellent time resolution, wide spectral response range and the like. The method has the defects that the method is very sensitive to the change of the environment temperature, the change of the environment temperature can cause the SiPM gain to drift, in the particle detection application, the detection data is inevitably deviated from the real data, and the reliability is poor.
According to the operating principle of the SiPM, the gain of the SiPM is proportional to the difference between the bias voltage applied to the detector and the avalanche threshold voltage, and since the semiconductor avalanche threshold voltage continuously increases with the increase of the temperature, even if the SiPM operates at a constant bias voltage, the gain of the SiPM continuously decreases with the increase of the temperature, and therefore the bias voltage needs to be adjusted.
However, the breakdown voltage of sipms is 25V, and a bias voltage higher than 25V needs to be provided. If the voltage is directly converted from an external power supply (10-30V), the conversion circuit is required to have the functions of boosting and reducing voltage, the circuit is complex, and a boosting switching power supply (for example, the boosting switching power supply for boosting 5V to 30V) is adopted alone, so that high-frequency ripples are generated, and the temperature operation of the detector is not facilitated.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model aims at providing a bias voltage circuit, photodetection module and oxygen partial pressure sensor can solve the high-frequency ripple that switching power supply produced, provides stable adjustable bias voltage, makes photodetection module and oxygen partial pressure sensor steady operation to the circuit is simple, stable.
In order to achieve the above object, a first aspect of the embodiments of the present invention provides a bias voltage circuit, which includes, as one implementation manner, a Boost voltage circuit and a reference voltage source circuit, wherein the Boost voltage circuit is connected to the reference voltage source circuit; wherein,
the Boost circuit is used for boosting the input voltage to obtain an output voltage;
the reference voltage source circuit is used for adjusting the output voltage according to the control voltage to obtain a bias voltage.
As one embodiment, the Boost circuit includes a switching power supply module, an inductor, a first diode, a first resistor, a second resistor, a first capacitor, a second capacitor, a third capacitor, and a fourth capacitor; wherein,
the input end of the switching power supply module is respectively connected with an enabling pin of the switching power supply module, a first end of the inductor and a first power end, the first power end provides the input voltage, a feedback end of the switching power supply module is respectively connected with a first end of a first resistor and a first end of a second resistor, a second end of the first resistor is connected with a negative electrode of the first diode, a second end of the second resistor is grounded, a switching control end of the switching power supply module is respectively connected with a second end of the inductor and a positive electrode of the first diode, a grounding end of the switching power supply module is grounded, the first capacitor is connected between the first power end and the ground, and the second capacitor, the third capacitor and the fourth capacitor are connected between the negative electrode of the first diode and the ground.
The reference voltage source circuit comprises a reference source adjusting module, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor and a seventh resistor; wherein,
the third resistor is connected between the negative electrode of the first diode and the bias voltage output end, the cathode of the reference source adjusting module is connected with the bias voltage output end, the anode of the reference source adjusting module is grounded, the fourth resistor is connected between the reference end of the reference source adjusting module and the bias voltage output end, the first end of the fifth resistor is connected with the reference end of the reference source adjusting module, the second end of the fifth resistor is connected with the first end of the sixth resistor, the second end of the sixth resistor receives the control voltage, and the seventh resistor is connected between the second end of the sixth resistor and the ground.
In one embodiment, the reference voltage source circuit further includes a fifth capacitor connected between the bias voltage output terminal and ground.
In one embodiment, the reference source adjusting module is model number TL 431N.
In one embodiment, the first diode is a schottky diode.
In one embodiment, the Boost voltage-boosting circuit further includes a transient suppression diode connected between the negative electrode of the first diode and ground.
As an implementation manner, the Boost voltage Boost circuit further includes a sixth capacitor, the sixth capacitor is connected between the negative electrode of the first diode and the ground, and the capacitance value of the sixth capacitor is smaller than the capacitance values of the second capacitor, the third capacitor and the fourth capacitor.
In order to achieve the above object, a second aspect of the present invention provides a photodetection module, as one implementation manner, the photodetection module includes an SiPM probe and a bias voltage circuit as described in any of the above implementation manners, and the bias voltage circuit provides the bias voltage for the SiPM probe.
In order to achieve the above object, a third aspect of the embodiments of the present invention provides an oxygen partial pressure sensor, which includes, as one implementation mode, an optical system, a signal processing module, and a photodetection module as described above; wherein,
the optical system is used for generating a fluorescence signal and a reference light signal, the photoelectric detection module is used for respectively receiving the fluorescence signal and the reference light signal and respectively converting the fluorescence signal and the reference light signal into a fluorescence electric signal and a reference photoelectric signal, and the signal processing module is used for calculating oxygen partial pressure according to the fluorescence electric signal and the reference photoelectric signal; wherein,
the signal processing module comprises an amplification difference circuit, an analog-to-digital conversion circuit, a digital quadrature phase-locked amplifier and a microprocessor, wherein the amplification difference circuit is used for amplifying the fluorescence electric signal and the reference photoelectric signal, the analog-to-digital conversion circuit is used for performing analog-to-digital conversion on the amplified electric signal, the digital quadrature phase-locked amplifier is used for performing quadrature phase-locked amplification on the digital signal obtained after the analog-to-digital conversion so as to calculate the phase difference between the fluorescence electric signal and the reference photoelectric signal, and the microprocessor is used for calculating the oxygen partial pressure according to a preset functional relation between the oxygen partial pressure and the phase difference.
The utility model adopts the above technical scheme, compare with prior art, have following beneficial effect:
the utility model provides a bias voltage circuit, photoelectric detection module and oxygen partial pressure sensor, through setting up Boost circuit and reference voltage source circuit, Boost circuit and reference voltage source circuit connection, Boost circuit is used for stepping up input voltage and obtains output voltage, reference voltage source circuit is used for adjusting output voltage according to control voltage in order to obtain bias voltage, can solve the high frequency ripple that switching power supply produced, provide stable adjustable bias voltage, make photoelectric detection module and oxygen partial pressure sensor steady operation, the gain that can also make photoelectric detection module (SiPM) under the temperature of difference is in a stable state all the time, with the temperature decoupling, and the circuit is simple, and is stable.
Drawings
Fig. 1 is a block diagram of a bias voltage circuit according to an embodiment of the present invention.
Fig. 2 is a detailed structure diagram of a bias voltage circuit according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a photodetection module according to an embodiment of the present invention.
Fig. 4 is a schematic diagram of a control voltage obtaining process according to an embodiment of the present invention.
Fig. 5 is a block diagram of an oxygen partial pressure sensor according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be described in detail and completely with reference to the accompanying drawings, and obviously, the described embodiments are some embodiments of the present invention, not all embodiments, and are only used for explaining the present invention, and are not used for limiting the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention. Reference throughout this patent specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. The particular features, structures, or characteristics may be included in integrated circuits, electronic circuits, combinational logic circuits, or other suitable components that provide the described functionality. In addition, only the matters related to the present invention are described in the specification, and others may be understood by those skilled in the art in combination with the prior art.
Referring to fig. 1, fig. 1 is a block diagram of a bias voltage circuit according to an embodiment of the present invention. As shown in fig. 1, the bias voltage circuit 10 includes a Boost voltage Boost circuit 101 and a reference voltage source circuit 102, and the Boost voltage Boost circuit 101 is connected to the reference voltage source circuit 102. The Boost circuit 101 is configured to Boost an input voltage to obtain an output voltage, and the reference voltage source circuit 102 is configured to adjust the output voltage according to a control voltage to obtain a bias voltage.
Specifically, the Boost circuit 101 (or a Boost power supply, a Boost circuit, etc.) is a switching dc Boost circuit, and generally includes a Boost module and a peripheral topology thereof, such as an inductor, an output upper tube, a voltage feedback resistor, a capacitor, etc., and functions to make a voltage output to a load higher than an input voltage. However, when the Boost module, i.e. the Boost switching power supply, is used, the switching power supply may generate a high-frequency ripple, which is not favorable for outputting a stable bias voltage to a load, such as the SiPM probe, and therefore, the reference voltage source circuit 102 is added on the basis of the Boost circuit 101 to stabilize the power supply and reduce the ripple. The specific value of the control voltage is obtained by referring to a target signal, and changing the bias voltage by changing the control voltage, so that the target signal is kept constant, which means that the gain of the SiPM is kept constant. This time is described in detail below with respect to specific applications.
Referring to fig. 2, fig. 2 is a detailed structure diagram of a bias voltage circuit according to an embodiment of the present invention. As shown in fig. 2, the Boost voltage Boost circuit 101 includes a switching power supply module U1, an inductor L, a first diode D1, a first resistor R1, a second resistor R2, a first capacitor C1, a second capacitor C2, a third capacitor C3, and a fourth capacitor C4; an input terminal VIN of the switching power supply module U1 is connected to an enable pin EN of the switching power supply module U1, a first terminal of the inductor L, and a first power supply terminal V1, the first power supply terminal V1 provides an input voltage, a feedback terminal FB of the switching power supply module U1 is connected to a first terminal of the first resistor R1 and a first terminal of the second resistor R2, a second terminal of the first resistor R1 is connected to a cathode of the first diode D1, a second terminal of the second resistor R2 is grounded, a switch control terminal VOUT (an output terminal, as it can be said) of the switching power supply module U1 is connected to a second terminal of the inductor L and an anode of the first diode D1, a ground terminal GND of the switching power supply module U1 is grounded, the first capacitor C1 is connected between the first power supply terminal V1 and ground, and the second capacitor C2, the third capacitor C3, and the fourth capacitor C4 are connected between the cathode of the first diode D1 and ground.
Specifically, the switching power supply module U1 may be selected according to actual requirements, and may be, for example, a boost switching power supply that boosts 5V to 30V, for example, the chip model of the switching power supply module is XL 6007.
In one embodiment, the first diode D1 is a schottky diode.
In one embodiment, the Boost voltage-boosting circuit 101 further includes a transient suppression diode TVS connected between the cathode of the first diode D1 and ground.
Specifically, by providing the TVS, since it has a very fast response time (in the order of sub-nanosecond) and a relatively high surge absorption capability, when its both ends are subjected to a transient high energy surge, the TVS can change the impedance value between the both ends from high impedance to low impedance at a very high speed to absorb a transient large current and clamp the voltage across it at a predetermined value, thereby protecting the following circuit elements from the transient high voltage spike.
In one embodiment, the Boost voltage circuit 101 further includes a sixth capacitor C6, the sixth capacitor C6 is connected between the negative terminal of the first diode D1 and the ground, and the capacitance of the sixth capacitor C6 is smaller than the capacitances of the second capacitor C2, the third capacitor C3 and the fourth capacitor C4.
In one embodiment, the reference voltage source circuit 102 includes a reference source adjusting module U2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, and a seventh resistor R7; the third resistor R3 is connected between the cathode of the first diode D1 and the BIAS voltage output terminal PD-BIAS, the cathode of the reference source adjusting module U2 is connected to the BIAS voltage output terminal PD-BIAS, the anode of the reference source adjusting module U2 is grounded, the fourth resistor R4 is connected between the reference terminal of the reference source adjusting module U2 and the BIAS voltage output terminal PD-BIAS, the first end of the fifth resistor R5 is connected to the reference terminal of the reference source adjusting module U2, the second end of the fifth resistor R5 is connected to the first end of the sixth resistor R6, the second end of the sixth resistor R6 receives the control voltage DAC, and the seventh resistor R7 is connected between the second end of the sixth resistor R6 and the ground.
In particular, since the control voltage DAC has a relatively small amplitude and range, and the BIAS voltage (PD-BIAS) has a relatively large range, for example, the operating voltage range of the SiPM probe is 25V to 28V, it is necessary to control the large voltage (BIAS voltage) with a small voltage (control voltage), and further, to reduce the ripple of the switching power supply. Therefore, by providing the reference voltage source circuit 102, the reference source adjusting module U2 is essentially a voltage converting chip for realizing small voltage control and large voltage. For example, in one embodiment, the reference source regulating module U2 may be model TL 431N.
In one embodiment, the reference voltage source circuit 102 further includes a fifth capacitor C5, and the fifth capacitor C5 is connected between the BIAS voltage output terminal PD-BIAS and ground.
To sum up, the utility model provides a bias voltage circuit, through setting up Boost circuit and reference voltage source circuit, Boost circuit and reference voltage source circuit connection, Boost circuit is used for stepping up input voltage and obtains output voltage, and the reference voltage source circuit is used for adjusting output voltage according to control voltage in order to obtain bias voltage, can solve the high-frequency ripple that switching power supply produced, provides stable adjustable bias voltage to the circuit is simple, stable.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a photodetection module according to an embodiment of the present invention. As shown in fig. 3, the photo-detection module 100 includes an SiPM probe 11 and the bias voltage circuit 10 according to any of the above embodiments, and the bias voltage circuit 10 provides a bias voltage for the SiPM probe 11.
Specifically, the gain of the SiPM itself is sensitive to voltage, and the gain of the SiPM is positively correlated with the bias voltage applied to the SiPM. That is, as the bias voltage increases, the gain of the SiPM increases. While the gain of the SiPM itself is also sensitive to temperature, the gain of the SiPM is inversely related to temperature, i.e., as the temperature increases, the gain of the SiPM becomes smaller. The gain of the SiPM can therefore be kept constant by automatically adjusting the bias voltage. For example, please refer to fig. 4, fig. 4 is a schematic diagram of a control voltage obtaining process according to an embodiment of the present invention. As shown in fig. 4, by setting a reference light, the ac amplitude of the reference light is a stable value, and taking the amplitude of the reference light as a reference, because the amplitude of the reference light changes when the gain of the SiPM changes due to the temperature change of the probe, the amplitude of the reference light changes accordingly, after the amplitude of the reference light is solved, the error calculation and PI calculation are performed with the set amplitude to obtain the next round of control voltage, and the gain of the SiPM is controlled in a stable range by changing the bias voltage, so as to reduce the influence of the gain on the light intensity-voltage output, thereby achieving the control target.
Referring to fig. 5, fig. 5 is a block diagram of an oxygen partial pressure sensor according to an embodiment of the present invention. As shown in fig. 5, the oxygen partial pressure sensor 200 includes an optical system 210, a signal processing module 220, and the above-mentioned photodetection module 100; the optical system 210 is configured to generate a fluorescence signal and a reference light signal, the photodetection module 100 is configured to receive the fluorescence signal and the reference light signal respectively and convert the fluorescence signal and the reference light signal into a fluorescence electrical signal and a reference photoelectric signal respectively, and the signal processing module 220 is configured to calculate an oxygen partial pressure according to the fluorescence electrical signal and the reference photoelectric signal; the signal processing module 220 includes an amplification differential circuit, an analog-to-digital conversion circuit, a digital quadrature phase-locked amplifier and a microprocessor, wherein the amplification differential circuit is used for amplifying the fluorescence electrical signal and the reference photoelectric signal, the analog-to-digital conversion circuit is used for performing analog-to-digital conversion on the amplified electrical signal, the digital quadrature phase-locked amplifier is used for performing quadrature phase-locked amplification on the digital signal obtained after the analog-to-digital conversion so as to calculate a phase difference between the fluorescence electrical signal and the reference photoelectric signal, and the microprocessor is used for calculating oxygen partial pressure according to a preset functional relationship between the oxygen partial pressure and the phase difference.
Specifically, the phase difference between the reference light and the fluorescence signal is different for different oxygen partial pressures, and the phase difference corresponds to the oxygen partial pressure. Therefore, through experiments, the phase difference under different oxygen partial pressures is calculated, and through calibration and fitting, a mathematical function relation between the oxygen partial pressure and the phase difference is found out, so that the phase difference can be finally calculated into the value of the oxygen partial pressure. Wherein, the calculation of the phase difference is realized by a digital quadrature phase-locked amplifier, and the phase detection principle can refer to the related prior art, and is not described in detail herein.
To sum up, the utility model provides a photoelectric detection module and oxygen partial pressure sensor, through setting up the bias voltage circuit, this bias voltage circuit includes Boost circuit and reference voltage source circuit, Boost circuit and reference voltage source circuit connection, Boost circuit is used for stepping up input voltage and obtains output voltage, the reference voltage source circuit is used for adjusting output voltage in order to obtain bias voltage according to control voltage, can solve the high frequency ripple that switching power supply produced, provide stable adjustable's bias voltage, make photoelectric detection module and oxygen partial pressure sensor steady operation, the gain that can also make photoelectric detection module under the temperature of difference is in a stable state all the time, decouple with the temperature, and the circuit is simple, stable.
The above description is only a preferred embodiment of the present invention, and the present invention is not limited to the above embodiments, and although the present invention has been disclosed with the preferred embodiments, but the present invention is not limited to the above embodiments, and any person skilled in the art can make some changes or modifications to the equivalent embodiments without departing from the technical scope of the present invention.
Claims (10)
1. A bias voltage circuit is characterized by comprising a Boost circuit and a reference voltage source circuit, wherein the Boost circuit is connected with the reference voltage source circuit; wherein,
the Boost circuit is used for boosting the input voltage to obtain an output voltage;
the reference voltage source circuit is used for adjusting the output voltage according to the control voltage to obtain a bias voltage.
2. The bias voltage circuit of claim 1, wherein the Boost voltage circuit comprises a switching power supply module, an inductor, a first diode, a first resistor, a second resistor, a first capacitor, a second capacitor, a third capacitor, and a fourth capacitor; wherein,
the input end of the switching power supply module is respectively connected with an enabling pin of the switching power supply module, a first end of the inductor and a first power end, the first power end provides the input voltage, a feedback end of the switching power supply module is respectively connected with a first end of a first resistor and a first end of a second resistor, a second end of the first resistor is connected with a negative electrode of the first diode, a second end of the second resistor is grounded, a switching control end of the switching power supply module is respectively connected with a second end of the inductor and a positive electrode of the first diode, a grounding end of the switching power supply module is grounded, the first capacitor is connected between the first power end and the ground, and the second capacitor, the third capacitor and the fourth capacitor are connected between the negative electrode of the first diode and the ground.
3. The bias voltage circuit of claim 2 wherein the first diode is a schottky diode.
4. The bias voltage circuit of claim 2, wherein the Boost voltage circuit further comprises a transient suppression diode connected between the cathode of the first diode and ground.
5. The bias voltage circuit of claim 2, wherein the Boost voltage circuit further comprises a sixth capacitor connected between the cathode of the first diode and ground, and wherein the capacitance of the sixth capacitor is smaller than the capacitance of the second capacitor, the third capacitor, and the fourth capacitor.
6. The bias voltage circuit of claim 2, wherein the reference voltage source circuit comprises a reference source adjustment module, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, and a seventh resistor; wherein,
the third resistor is connected between the negative electrode of the first diode and the bias voltage output end, the cathode of the reference source adjusting module is connected with the bias voltage output end, the anode of the reference source adjusting module is grounded, the fourth resistor is connected between the reference end of the reference source adjusting module and the bias voltage output end, the first end of the fifth resistor is connected with the reference end of the reference source adjusting module, the second end of the fifth resistor is connected with the first end of the sixth resistor, the second end of the sixth resistor receives the control voltage, and the seventh resistor is connected between the second end of the sixth resistor and the ground.
7. The bias voltage circuit of claim 6, wherein the reference voltage source circuit further comprises a fifth capacitor connected between the bias voltage output terminal and ground.
8. The bias voltage circuit of claim 6, wherein the reference source regulator module is model number TL 431N.
9. A photodetection module comprising an SiPM probe and the bias voltage circuit according to any one of claims 1-8, said bias voltage circuit providing said bias voltage to said SiPM probe.
10. An oxygen partial pressure sensor, comprising an optical system, a signal processing module, and the photodetection module according to claim 9; wherein,
the optical system is used for generating a fluorescence signal and a reference light signal, the photoelectric detection module is used for respectively receiving the fluorescence signal and the reference light signal and respectively converting the fluorescence signal and the reference light signal into a fluorescence electric signal and a reference photoelectric signal, and the signal processing module is used for calculating oxygen partial pressure according to the fluorescence electric signal and the reference photoelectric signal; wherein,
the signal processing module comprises an amplification difference circuit, an analog-to-digital conversion circuit, a digital quadrature phase-locked amplifier and a microprocessor, wherein the amplification difference circuit is used for amplifying the fluorescence electric signal and the reference photoelectric signal, the analog-to-digital conversion circuit is used for performing analog-to-digital conversion on the amplified electric signal, the digital quadrature phase-locked amplifier is used for performing quadrature phase-locked amplification on the digital signal obtained after the analog-to-digital conversion so as to calculate the phase difference between the fluorescence electric signal and the reference photoelectric signal, and the microprocessor is used for calculating the oxygen partial pressure according to a preset functional relation between the oxygen partial pressure and the phase difference.
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| CN114006348A (en) * | 2021-12-06 | 2022-02-01 | 之江实验室 | Single-row carrier photoelectric detector bias voltage protection circuit |
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