CN203593626U - Preparation device for fluidized bed polycrystalline silicon particles - Google Patents
Preparation device for fluidized bed polycrystalline silicon particles Download PDFInfo
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- CN203593626U CN203593626U CN201320549074.1U CN201320549074U CN203593626U CN 203593626 U CN203593626 U CN 203593626U CN 201320549074 U CN201320549074 U CN 201320549074U CN 203593626 U CN203593626 U CN 203593626U
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Abstract
The utility model relates to the field of polycrystalline silicon, in particular to a preparation device for fluidized bed polycrystalline silicon particles. The preparation device comprises a fluidized bed reactor, a cyclone separator, a fine silicon particle seed crystal tank and a silicon particle feed tank, wherein the fluidized bed reactor comprises a fluidized bed reactor barrel body and a fluidized bed enlarging section; a product discharge opening is formed in the bottom of the fluidized bed reactor barrel body; a silicon source gas feed opening and a diluents gas inlet are formed in the lower part of the fluidized bed reactor barrel body; the fluidized bed reactor barrel body is wrapped with a reactor heating device; a reaction tail gas outlet is formed in the top of the fluidized bed enlarging section; a silicon seed crystal feed opening and a tail gas outlet are formed in the top of the fine silicon particle seed crystal tank; the bottom of the fluidized bed enlarging section is fixedly connected with the top of the fluidized bed reactor barrel body; the diameter of the fluidized bed enlarging section is larger than that of the fluidized bed reactor barrel body. The system prolongs the service life of the fluidized bed reactor, saves energy, avoids pollution of polycrystalline silicon from outer environment, realizes continuous production, and increases production efficiency.
Description
Technical field
The utility model relates to polysilicon manufacturing technology field, is specifically related to a kind of preparation facilities of fluidized-bed polycrysalline silcon.
Background technology
Polysilicon is the starting material of preparing silicon single crystal and solar cell, is the basis of global electronic industry and photovoltaic industry, and the polysilicon in the whole world has that to exceed 80% be for photovoltaic industry.The polysilicon of producing also needs through melting, ingot casting, and the operations such as section are prepared into cell piece again.In this process, produce high purity polycrystalline silicon operation and polysilicon melting operation and need to consume a large amount of energy, reduce energy consumption in the urgent need to.At present, the main method of industrial scale operation high-purity polycrystalline silicon is improved Siemens and fluidized bed process.
The Siemens process high advantage of ripening degree that possesses skills of improvement.But aspect production efficiency and energy consumption, also there is significant shortcoming.Owing to adopting bell-jar reactor, grow up and must make reactor lower the temperature and take out product after certain size (as 50 ~ 300mm) at silicon rod, therefore can only adopt periodical operation, energy consumption is high.And in the improvement that the deficiency existing for Siemens Method is carried out, introduced the method that fluidized-bed reactor is produced polycrysalline silcon, in fluidized-bed reactor, silicon-containing gas is generated elemental silicon and is deposited to polycrysalline silcon surface by hydrogen reduction reaction.Because the silicon surface area that participates in fluidized-bed reactor reacting is large, speed of reaction is increased greatly, so the production efficiency of the method is high, power consumption is little, cost is low, be relatively applicable to scale operation solar-grade polysilicon.But, also there is certain shortcoming in fluidized-bed reactor, such as, the reaction of chemical vapour deposition high-purity polycrystalline silicon is very responsive to temperature, therefore the polysilicon that has caused reaction to generate can deposit to hot wall surface, makes the heat transfer efficiency of reactor wall greatly reduce to heat transfer and cause difficulty.And because some reactor material is such as quartzy thermal expansivity differs an order of magnitude compared with polysilicon, in the time having polysilicon deposition to reactor wall, can cause reactor break, bring safely hidden danger to industrial operation.
Utility model content
The utility model, in order to address the above problem, provides a kind of preparation facilities of fluidized-bed polycrysalline silcon.
In order to solve the problems of the technologies described above, the utility model is achieved through the following technical solutions:
A preparation facilities for fluidized-bed polycrysalline silcon, comprises fluidized-bed reactor, cyclonic separator, thin silicon grain crystal seed tank and silicon grain feed pot; Fluidized-bed reactor comprises fluidized-bed reactor cylindrical shell and fluidized-bed expanding reach; Fluidized-bed reactor cylinder body bottom is provided with outlet for product, and bottom is provided with silicon source gas opening for feed and diluent gas inlet mouth, and fluidized-bed reactor cylindrical shell outside is coated with reactor heating unit; Fluidized-bed expanding reach top is provided with reaction end gas outlet; Thin silicon grain crystal seed tank top is provided with silicon seed charging opening and tail gas outlet; The bottom of fluidized-bed expanding reach and fluidized-bed reactor cylindrical shell top are connected, and the diameter of fluidized-bed expanding reach is greater than the diameter of fluidized-bed reactor cylindrical shell; Fluidized-bed expanding reach top is connected with cyclonic separator import by pipeline, and cyclonic separator outlet at bottom is connected with silicon grain feed pot, and the bottom of silicon grain feed pot is connected with the silicon seed opening for feed of being located at fluidized-bed reactor cylindrical shell bottom; Cyclonic separator top exit is connected with fluidized-bed reactor cylindrical shell bottom after tail gas booster fan on the one hand by pipeline, is connected on the other hand with thin silicon grain crystal seed tank bottom, and thin silicon grain crystal seed pot bottom outlet is connected with silicon grain feed pot by pipeline; The pipeline being connected by outlet for product is provided with heat recuperation sleeve, and silicon source property gas is first through being located at the gas preheater preheating on pipeline, then after the heat exchange of heat recuperation sleeve, is connected with silicon source gas opening for feed.
Feature of the present utility model is that fluidized-bed reactor is divided into fluidized-bed reactor cylindrical shell and fluidized-bed expanding reach two portions, object is exactly by the upper diameter of fluidized-bed reactor is amplified, reduce the gas flow rate after the property gas reaction of silicon source, thereby the fine silica powder of certain diameter is dropped in fluidized-bed reactor again, avoid reaction end gas that too much fine silica powder is taken out of to fluidized-bed reactor and then increased follow-up operation.Reaction end gas is after cyclonic separator separates, because the tail gas after separating also can be carried the silica flour that a part of particle diameter is less secretly, therefore most tail gas comes back in fluidized-bed reactor and reacts after the pressurization of tail gas booster fan, small part passes in thin silicon grain crystal seed tank, owing to depositing the silicon seed of thin silicon grain in thin silicon grain crystal seed tank, therefore utilize the adsorptivity of thin silicon grain to carry out fractionation by adsorption to tail gas, thereby more than 98% silica flour residual in tail gas can be adsorbed, not only reduce the loss of silica flour, and reduce tail gas pollution, the heat of tail gas can also preheat the thin silicon grain of depositing in thin silicon grain crystal seed tank simultaneously, save the energy, avoid that the silicon seed temperature of thin silicon grain is too low to be impacted reaction.Similar and the filter paper filtering of this principle, when adsorbing and have after part filter residue on filter paper, filter effect can be better, and fine silica powder particulate species of the present invention is similar to the filter residue on filter paper, can play better filteration, improve filter effect, thereby by silica flour absorption residual in tail gas, reduce the pollution of tail gas.Thin silicon grain crystal seed pot bottom outlet is connected with silicon grain feed pot by pipeline, by utilizing silicon grain feed pot relative current fluidized bed reactor to carry out silicon seed interpolation, can realize continuous operation, thereby avoid polycrystalline silicon rod in andnon-continuous operation manner easily to introduce in dismounting and follow-up broken haulage stage the pollution that impurity causes.Simultaneously, the silicon seed opening for feed that silicon seed is arranged by fluidized-bed reactor cylindrical shell bottom joins in fluidized-bed reactor, the duration of contact that has increased silicon seed and silicon source property gas, overcome silicon seed and added from top, the defect that the thinner silicon seed of granularity is taken out of by reaction end gas.Silicon source property gas is after the heat exchange of heat recuperation sleeve, and temperature is raise, and reaches like this object that reclaims heat energy, has saved the energy.
As preferably, the diameter of fluidized-bed expanding reach be fluidized-bed reactor barrel diameter 1.5-3 doubly, and fluidized-bed expanding reach and fluidized-bed reactor cylindrical shell junction arc excessive; The length of fluidized-bed expanding reach is the 1/3-1/2 of fluidized-bed reactor cylindrical shell length.
As preferably, diluent gas inlet mouth and through the pressurization of tail gas booster fan laggard enter air flow line and the fluidized-bed reactor cylinder inboard wall angulation of fluidized-bed reactor cylindrical shell be all less than or equal to 30 degree.Airintake direction is all directly to enter conventionally at present, and the present invention utilizes diluent gas or recycled offgas to enter at a certain angle fluidized-bed reactor, reduce the generation of silica flour at reaction inwall, reduce the wearing and tearing of inwall, extend the work-ing life of fluidized-bed reactor, reduce maintenance cost.
As preferably, diluent gas inlet mouth and through the pressurization of tail gas booster fan laggard enter air flow line and the fluidized-bed reactor cylinder inboard wall of fluidized-bed reactor cylindrical shell tangent, air flow line and horizontal plane angulation are 1-4 degree.The inwall of the tangent better fluid bedreactors cylindrical shell of air flow line and fluidized-bed reactor cylinder inboard wall produces a surging force, avoid silica flour to generate at fluidized-bed reactor inwall, and after air flow line and horizontal plane angulation be 1-4 degree, can make air-flow along the longer distance of fluidized-bed reactor walking, to expand airflow convection fluidized bed reactor inwall range of influence.
As preferably, the position of described silicon grain feed pot is corresponding with the silicon seed position in fluidized-bed reactor cylindrical shell, and silicon grain feed pot and fluidized-bed reactor form communicating vessels structure.By silicon grain feed pot and fluidized-bed reactor are formed to communicating vessels structure, silicon grain feed pot can carry out adding of real-time continuous according to the amount of silicon seed in fluidized-bed reactor, thereby guarantees the carrying out of fluidized-bed reactor successive reaction.
As preferably, fluidized-bed expanding reach and fluidized-bed reactor cylinder inboard wall are provided with the air retaining wall that thickness is 1-3mm.
Owing to adopting technique scheme, the beneficial effects of the utility model are:
1) improved the level of response of silicon source property gas, reduce the amount of the silica flour of taking with reaction end gas, 2) change and enter air-flow in fluidized-bed reactor and the angle of fluidized-bed reactor inwall, thereby air-flow can be carried out along fluidized-bed reactor inwall, can reduce like this silica flour of generation in the deposition of fluidized-bed reactor inwall, 3) in thin silicon grain crystal seed tank, place fine-grained silicon seed, and reaction end gas is passed into from thin silicon grain crystal seed tank bottom, by silicon seed, reaction end gas is filtered and is removed the thin silicon grain of carrying secretly in tail gas, reduce the loss of silicon.Meanwhile, reaction end gas heats silicon seed particle, has reclaimed the heat of reaction end gas, reduces the consumption of energy.4) by the position of silicon grain feed pot is corresponding with the silicon seed position in fluidized-bed reactor cylindrical shell, silicon grain feed pot and fluidized-bed reactor form communicating vessels structure, thereby realize the self-feeding operate continuously of silicon seed, also avoid fragmentation and the washing of polycrystalline silicon rod in periodical operation to cause the contaminated generation of polysilicon, also improved production efficiency and output simultaneously.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the present utility model.
In figure: 1 fluidized-bed reactor, 2 fluidized-bed reactor cylindrical shells, 3 outlet for product, 4 silicon source gas opening for feeds, 5 diluent gas inlet mouths, 6 reactor heating units, 7 silicon seed opening for feeds, 8 fluidized-bed expanding reach, 9 reaction end gas outlets, 10 cyclonic separators, 11 thin silicon grain crystal seed tanks, 12 silicon seed charging openings, 13 tail gas outlets, 14 silicon grain feed pots, 15 tail gas booster fans, 16 heat recuperation sleeves, 17 gas preheaters.
Embodiment
With specific embodiment, the utility model is further described below.
Embodiment
A preparation facilities for fluidized-bed polycrysalline silcon, as shown in Figure 1, comprises fluidized-bed reactor 1, cyclonic separator 10, thin silicon grain crystal seed tank 11 and silicon grain feed pot 14; Fluidized-bed reactor 1 comprises fluidized-bed reactor cylindrical shell 2 and fluidized-bed expanding reach 8; Fluidized-bed reactor cylindrical shell 2 bottoms are provided with outlet for product 3, and bottom is provided with silicon source gas opening for feed 4 and diluent gas inlet mouth 5, and fluidized-bed reactor cylindrical shell 2 outsides are coated with reactor heating unit 6; Fluidized-bed expanding reach 8 tops are provided with reaction end gas outlet 9; Thin silicon grain crystal seed tank 11 tops are provided with silicon seed charging opening 12 and tail gas outlet 13; The bottom of fluidized-bed expanding reach 8 and fluidized-bed reactor cylindrical shell 2 tops are connected, and the diameter of fluidized-bed expanding reach 8 is greater than the diameter of fluidized-bed reactor cylindrical shell 2; Fluidized-bed expanding reach 8 tops are connected with cyclonic separator 10 imports by pipeline, and cyclonic separator 10 outlet at bottoms are connected with silicon grain feed pot 14, and the bottom of silicon grain feed pot 14 is connected with the silicon seed opening for feed 7 of being located at fluidized-bed reactor cylindrical shell 2 bottoms; Cyclonic separator 10 top exits are connected with fluidized-bed reactor cylindrical shell 2 bottoms after tail gas booster fan 15 on the one hand by pipeline, be connected with thin silicon grain crystal seed tank 11 bottoms on the other hand, thin silicon grain crystal seed tank 11 outlet at bottoms are connected with silicon grain feed pot 14 by pipeline; The pipeline being connected by outlet for product 3 is provided with heat recuperation sleeve 16, and silicon source property gas, after gas preheater 17 preheatings on being located at pipeline, then is connected with silicon source gas opening for feed 4 after 16 heat exchange of heat recuperation sleeve.Wherein, the diameter of fluidized-bed expanding reach 8 is 2 times of fluidized-bed reactor cylindrical shell 2 diameters, and fluidized-bed expanding reach 8 is excessive with fluidized-bed reactor cylindrical shell 2 junction arcs; The length of fluidized-bed expanding reach 8 is 1/2 of fluidized-bed reactor cylindrical shell 2 length.Diluent gas inlet mouth 5 and through tail gas booster fan 15 pressurize laggard enter air flow line and fluidized-bed reactor cylindrical shell 2 inwalls of fluidized-bed reactor cylindrical shell 2 tangent, air flow line and horizontal plane angulation are 3 degree.The position of silicon grain feed pot 14 is corresponding with the silicon seed position in fluidized-bed reactor cylindrical shell 2, and silicon grain feed pot 14 forms communicating vessels structure with fluidized-bed reactor.In addition, fluidized-bed expanding reach 8 is provided with fluidized-bed reactor cylindrical shell 2 inwalls the air retaining wall that thickness is 2mm.
In actual production, silicon seed is joined in thin silicon grain crystal seed tank 11 by silicon seed charging opening 12, then join by the road in silicon grain feed pot 14, join the bottom of fluidized-bed reactor cylindrical shell 2 via silicon seed opening for feed 7, silicon source property gas is after gas preheater 17 preheatings, heat through heat recuperation sleeve 16 bottom that enters into fluidized-bed reactor cylindrical shell 2 through silicon source gas opening for feed 4 again, diluent gas enters the bottom of fluidized-bed reactor cylindrical shell 2 through diluent gas inlet mouth, silicon source property gas is in the interior reaction of fluidized-bed reactor 1, and in fluidized-bed reactor cylindrical shell 2 bottom depositions, the polysilicon of producing is discharged through outlet for product 3, unreacted gas entrainment part silica flour and is passed in cyclonic separator 10 and is separated by the reaction end gas outlet 9 at fluidized-bed expanding reach 8 tops, silica flour after separation enters in silicon grain feed pot 14, tail gas after separation is after 15 pressurizations of tail gas booster fan, major part turns back to carries out secondary response again in fluidized-bed reactor cylindrical shell 2, small part passes into that thin silicon grain crystal seed tank 11 is interior discharges after the silicon seed adsorption filtration in meticulous silicon grain crystal seed tank 11.
Claims (4)
1. a preparation facilities for fluidized-bed polycrysalline silcon, is characterized in that, comprises fluidized-bed reactor (1), cyclonic separator (10), thin silicon grain crystal seed tank (11) and silicon grain feed pot (14); Fluidized-bed reactor (1) comprises fluidized-bed reactor cylindrical shell (2) and fluidized-bed expanding reach (8); Fluidized-bed reactor cylindrical shell (2) bottom is provided with outlet for product (3), and bottom is provided with silicon source gas opening for feed (4) and diluent gas inlet mouth (5), and fluidized-bed reactor cylindrical shell (2) outside is coated with reactor heating unit (6); Fluidized-bed expanding reach (8) top is provided with reaction end gas outlet (9); Thin silicon grain crystal seed tank (11) top is provided with silicon seed charging opening (12) and tail gas outlet (13); The bottom of fluidized-bed expanding reach (8) and fluidized-bed reactor cylindrical shell (2) top are connected, and the diameter of fluidized-bed expanding reach (8) is greater than the diameter of fluidized-bed reactor cylindrical shell (2); Fluidized-bed expanding reach (8) top is connected with cyclonic separator (10) import by pipeline, cyclonic separator (10) outlet at bottom is connected with silicon grain feed pot (14), and the bottom of silicon grain feed pot (14) is connected with the silicon seed opening for feed (7) of being located at fluidized-bed reactor cylindrical shell (2) bottom; Cyclonic separator (10) top exit is connected with fluidized-bed reactor cylindrical shell (2) bottom after tail gas booster fan (15) on the one hand by pipeline, be connected with thin silicon grain crystal seed tank (11) bottom on the other hand, thin silicon grain crystal seed tank (11) outlet at bottom is connected with silicon grain feed pot (14) by pipeline; The pipeline being connected by outlet for product (3) is provided with heat recuperation sleeve (16), and silicon source property gas is first through being located at gas preheater (17) preheating on pipeline, then after heat recuperation sleeve (16) heat exchange, is connected with silicon source gas opening for feed (4).
2. the preparation facilities of a kind of fluidized-bed polycrysalline silcon according to claim 1, it is characterized in that, the diameter of fluidized-bed expanding reach (8) is 1.5-3 times of fluidized-bed reactor cylindrical shell (2) diameter, and fluidized-bed expanding reach (8) is excessive with fluidized-bed reactor cylindrical shell (2) junction arc; The length of fluidized-bed expanding reach (8) is the 1/3-1/2 of fluidized-bed reactor cylindrical shell (2) length.
3. the preparation facilities of a kind of fluidized-bed polycrysalline silcon according to claim 1, it is characterized in that, the position of described silicon grain feed pot (14) is corresponding with the silicon seed position in fluidized-bed reactor cylindrical shell (2), and silicon grain feed pot (14) forms communicating vessels structure with fluidized-bed reactor.
4. the preparation facilities of a kind of fluidized-bed polycrysalline silcon according to claim 1, is characterized in that, fluidized-bed expanding reach (8) is provided with fluidized-bed reactor cylindrical shell (2) inwall the air retaining wall that thickness is 1-3mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320549074.1U CN203593626U (en) | 2013-09-03 | 2013-09-03 | Preparation device for fluidized bed polycrystalline silicon particles |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320549074.1U CN203593626U (en) | 2013-09-03 | 2013-09-03 | Preparation device for fluidized bed polycrystalline silicon particles |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103449442A (en) * | 2013-09-03 | 2013-12-18 | 浙江精功新材料技术有限公司 | System for preparing polysilicon granules in fluidized bed and process for preparing polysilicon by using same |
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2013
- 2013-09-03 CN CN201320549074.1U patent/CN203593626U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103449442A (en) * | 2013-09-03 | 2013-12-18 | 浙江精功新材料技术有限公司 | System for preparing polysilicon granules in fluidized bed and process for preparing polysilicon by using same |
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Granted publication date: 20140514 |