CN203007417U - Plasma enhanced chemical vapor deposition plate electrode device and deposition device - Google Patents
Plasma enhanced chemical vapor deposition plate electrode device and deposition device Download PDFInfo
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- CN203007417U CN203007417U CN 201220629223 CN201220629223U CN203007417U CN 203007417 U CN203007417 U CN 203007417U CN 201220629223 CN201220629223 CN 201220629223 CN 201220629223 U CN201220629223 U CN 201220629223U CN 203007417 U CN203007417 U CN 203007417U
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Abstract
The utility model discloses a plasma enhanced chemical vapor deposition plate electrode device and a deposition device. The plasma enhanced chemical vapor deposition plate electrode device comprises a plasma enhanced chemical vapor deposition plate electrode which is used for being in contact with a base plate needing to be subjected to plasma enhanced chemical vapor deposition, wherein the plasma enhanced chemical vapor deposition plate electrode is provided with a movable location unit which is used for ejecting the base plate or placing the base plate on the plasma enhanced chemical vapor deposition plate electrode; and the plasma enhanced chemical vapor deposition plate electrode device also comprises a movable location unit voltage control unit which is used for controlling the surface voltage of the movable location unit and enabling the movable location unit to generate an electric field parallel to the base plate, thus electric charges on the base plate are driven to move, so that the electric charges are neutralized, or dissipated when moving in a circuitous pattern, and therefore, the electric charge accumulation is greatly reduced in the process of depositing a material layer on the surface of the chemical vapor deposited base plate by plasmas, and the electrostatic discharge is prevented from occurring on the base plate.
Description
Technical field
The utility model belongs to the plasma enhanced chemical vapor deposition technical field, is specifically related to a kind of plasma enhanced chemical vapor deposition electrode plate device and deposition apparatus.
Background technology
Along with the fast development of economic construction, microelectronics has obtained swift and violent development, and (be called for short: PECVD) exploitation of equipment and use are also increasingly extensive for plasma enhanced chemical vapor deposition.PECVD equipment is to utilize high frequency electric source glow discharge, produces the equipment of plasma chemistry deposition, due to the existence of plasma body, thereby reduces depositing temperature.At present, PECVD equipment is widely used in the manufacturing of liquid-crystal display industry, solar cell industry, semiconducter device and large-scale integrated circuit etc.
Plasma enhanced chemical vapor deposition (PECVD) is usually used in the upper deposited material layer of substrate (transparency carrier or the semiconductor wafer that for example are used for flat panel display).PECVD normally enters by guiding precursor gas or gaseous mixture the vacuum chamber that contains substrate and completes, make it can be quantized (for example exciting) to precursor gas or gaseous mixture to become plasma body by applying radio frequency, these plasma bodys can react to each other or with the substrate surface substance reaction in order to be deposited as material layer.
At present, in the film process of thin-film transistor LCD device (TFT-LCD) manufacturing process, carry out on the substrate of plasma enhanced chemical vapor deposition due to isoionic uneven distribution, charge accumulated easily occurs, static discharges when will occur on substrate charge accumulated to a certain extent, therefore it is difficult to control the homogeneity of processing operation, form blocked up or excessively thin material layer on the surface of substrate.
The utility model content
Technical problem to be solved in the utility model is for above shortcomings in prior art, and plasma enhanced chemical vapor deposition electrode plate device and deposition apparatus are provided.This plasma enhanced chemical vapor deposition electrode plate device can be avoided occuring on substrate static and discharge, and improves the homogeneity of deposited material layer.
the utility model provides a kind of plasma enhanced chemical vapor deposition electrode plate device, comprise for the contacted plasma enhanced chemical vapor deposition battery lead plate of the substrate that will carry out plasma enhanced chemical vapor deposition, wherein, be provided with on described plasma enhanced chemical vapor deposition battery lead plate for the running fix unit that described substrate is pushed up from or is placed on described plasma enhanced chemical vapor deposition battery lead plate, described plasma enhanced chemical vapor deposition electrode plate device also comprises: the running fix cell voltage control unit of controlling the surface voltage of described running fix unit, be used for making described running fix unit to produce the electric field parallel with described substrate on described substrate.
Preferably, separate by insulating part between described running fix unit and described plasma enhanced chemical vapor deposition battery lead plate.
Preferably, the material of described insulating part is the heat transfer insulating material.
Preferably, be provided with through hole on described plasma enhanced chemical vapor deposition battery lead plate, described insulating part is embedded on the hole wall of described through hole, described running fix unit runs through described through hole, and described running fix unit runs through between described throughhole portions and described plasma enhanced chemical vapor deposition battery lead plate and separates by insulating part.
Preferably, after described running fix unit was placed on described plasma enhanced chemical vapor deposition battery lead plate with described substrate, the outside surface of described running fix unit flushed with the outside surface of described plasma enhanced chemical vapor deposition battery lead plate.
Preferably, described running fix unit is a plurality of.
Preferably, a plurality of described running fix unit is evenly distributed on described plasma enhanced chemical vapor deposition battery lead plate.
Preferably, also comprise be used to the heating unit that heats described running fix unit, and/or be used for the cooling unit of cooling described running fix unit.
And/or for detection of the temperature detecting unit of described running fix cell temperature.
Preferably, described running fix unit comprise for the accommodation unit of fixed support and be used for the top from or described substrate is placed on mobile unit on described plasma enhanced chemical vapor deposition battery lead plate, described accommodation unit and described mobile unit nest together by the mode of stretching; After described mobile unit was placed on described plasma enhanced chemical vapor deposition battery lead plate with described substrate, the outside surface of described mobile unit flushed with the outside surface of described plasma enhanced chemical vapor deposition battery lead plate.
The utility model also provides a kind of plasma enhanced chemical vapor deposition unit, comprises above-mentioned plasma enhanced chemical vapor deposition electrode plate device.
Plasma enhanced chemical vapor deposition electrode plate device of the present utility model can form the electric field of level on substrate, thereby the charge movement on the driving substrate, electric charge is neutralized or dissipates when mobile in circuitous pattern (Pattern), therefore can greatly reduce plasma body charge accumulated in the deposited material layer process on the substrate surface of chemical vapour deposition, avoid occuring on substrate static and discharge.This device also can change the internal field on substrate, thereby changes local film forming speed, controls to improve plasma enhanced chemical vapor deposition the homogeneity of processing operation, forms the uniform material layer of thin and thick on the surface of substrate.
Description of drawings
Fig. 1 is the broken section structure iron of the plasma enhanced chemical vapor deposition electrode plate device in the utility model embodiment 2;
Fig. 2 be in the utility model embodiment 2 the plasma enhanced chemical vapor deposition electrode plate device along directions X (or Y-direction) sectional structure chart;
Fig. 3 is the plan structure figure of the plasma enhanced chemical vapor deposition electrode plate device in the utility model embodiment 2;
Fig. 4 be in the utility model embodiment 2 the plasma enhanced chemical vapor deposition electrode plate device in the structure iron of running fix unit.
In figure: 1-running fix unit; The 2-insulating part; 3-plasma enhanced chemical vapor deposition battery lead plate; The 4-mobile unit; The 5-accommodation unit; 6-independent voltage supply lead; 7-temperature inductor wire; 8-heating rod pipeline; The 9-insulated column.
Embodiment
For making those skilled in the art understand better the technical solution of the utility model, below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
the utility model provides a kind of plasma enhanced chemical vapor deposition electrode plate device, comprise for the contacted plasma enhanced chemical vapor deposition battery lead plate 3 of the substrate that will carry out plasma enhanced chemical vapor deposition, wherein, be provided with on described plasma enhanced chemical vapor deposition battery lead plate 3 for described substrate top from or be placed on running fix unit 1 on described plasma enhanced chemical vapor deposition battery lead plate 3, described plasma enhanced chemical vapor deposition electrode plate device also comprises: the running fix cell voltage control unit of controlling the surface voltage of described running fix unit 1, be used for making described running fix unit 1 to produce the electric field parallel with described substrate on described substrate.
Plasma enhanced chemical vapor deposition electrode plate device of the present utility model can form the electric field of level on substrate, thereby the charge movement on the driving substrate, electric charge is neutralized or dissipates when mobile in circuitous pattern (Pattern), therefore can greatly reduce plasma body charge accumulated in the deposited material layer process on the substrate surface of chemical vapour deposition, avoid occuring on substrate static and discharge.This device also can change the internal field on substrate, thereby changes local film forming speed, controls to improve plasma enhanced chemical vapor deposition the homogeneity of processing operation, forms the uniform material layer of thin and thick on the surface of substrate.
as shown in Fig. 1 ~ 3, the present embodiment provides a kind of plasma enhanced chemical vapor deposition electrode plate device, comprise for the contacted plasma enhanced chemical vapor deposition battery lead plate 3 of the substrate that will carry out plasma enhanced chemical vapor deposition, wherein, be provided with on described plasma enhanced chemical vapor deposition battery lead plate 3 for described substrate top from or be placed on running fix unit 1 on described plasma enhanced chemical vapor deposition battery lead plate 3, described plasma enhanced chemical vapor deposition electrode plate device also comprises: the running fix cell voltage control unit of controlling the voltage of described running fix unit 1, be used for making described running fix unit 1 to produce the electric field parallel with described substrate on described substrate.
in the heavy film manufacturing processed of thin film transistor (TFT) array manufacturing processed, need to use plasma enhanced chemical vapor deposition deposited material layer on the method substrate, can gather a lot of electric charges at substrate surface and cause that static discharges, running fix cell voltage control unit by the plasma enhanced chemical vapor deposition electrode plate device make described running fix unit 1 produce on described substrate the electric field parallel with described substrate can be on substrate the electric field of formation level, thereby the charge movement on the driving substrate, electric charge is neutralized or dissipates when mobile in circuitous pattern (Pattern), therefore can greatly reduce plasma body charge accumulated in the deposited material layer process on the substrate surface of chemical vapour deposition, avoiding occuring on substrate static discharges.
When only having a running fix unit 1 on plasma enhanced chemical vapor deposition battery lead plate 3, the size that running fix cell voltage control unit only need to be controlled the voltage of this running fix unit 1 gets final product (voltage of this running fix unit 1 should be different from plasma enhanced chemical vapor deposition battery lead plate 3 voltage) certainly.When a plurality of running fixes unit 1 is arranged on plasma enhanced chemical vapor deposition battery lead plate 3, running fix cell voltage control unit can apply the sweep voltage of directions X on each running fix unit 1, sweep voltage is according to behind the directions X sequential scanning complete running fix unit of arranging along the directions X lastrow 1, the running fix unit 1(that scans in order again next line is certain, also can be to synchronously scanning along the multirow running fix unit 1 of arranging on directions X), until on directions X, all running fix unit 1 has all scanned one time.In like manner, running fix cell voltage control unit can be again applies the sweep voltage of Y-direction on running fix unit 1.
Preferably, the plasma enhanced chemical vapor deposition electrode plate device of the present embodiment is the lower electrode plate of plasma enhanced chemical vapor deposition unit, that is to say the upper surface of this battery lead plate up, relative with electric pole plate, and substrate to be deposited can directly be placed on it.
As shown in Figure 1 and Figure 2, separate by insulating part 2 between described running fix unit 1 and described plasma enhanced chemical vapor deposition battery lead plate 3.Preferably, the material of described insulating part 2 is the heat transfer insulating material.In the present embodiment, described insulating material is specially the stupalith of high heat conductance, high-k and high-insulativity, thereby can realize that effective heat transfer between running fix unit 1 and plasma enhanced chemical vapor deposition battery lead plate and insulation and the strength of electric field that produces separately do not interfere with each other.
Preferably, offer through hole on plasma enhanced chemical vapor deposition battery lead plate 3, described insulating part 2 is embedded on the hole wall of described through hole, described running fix unit 1 runs through described through hole, and described running fix unit 1 runs through between described throughhole portions and described plasma enhanced chemical vapor deposition battery lead plate 3 and separates by insulating part 2.In the present embodiment, the horizontal section of running fix unit 1 is specially circle, and its horizontal section also can be other shapes such as rectangle, trilateral certainly.
Preferably, there is no the space between the hole wall of the through hole on 2 of running fix unit 1 and insulating parts and insulating part 2 and plasma enhanced chemical vapor deposition battery lead plate 3, insulating part 2 just in time is filled between running fix unit 1 and plasma enhanced chemical vapor deposition battery lead plate 3, thereby realized seamless applying so that conduct heat.
As shown in Figure 2, preferably, after described running fix unit 1 is placed on described plasma enhanced chemical vapor deposition battery lead plate 3 with described substrate, the outside surface of described running fix unit 1 flushes with the outside surface of described plasma enhanced chemical vapor deposition battery lead plate 3, thereby the outside surface that makes the plasma enhanced chemical vapor deposition electrode plate device becomes a horizontal plane, can fully contact with substrate.
As shown in Figure 2 and Figure 3, preferably, be provided with a plurality of through holes on plasma enhanced chemical vapor deposition battery lead plate 3, be provided with insulating part 2 on the hole wall of through hole, described running fix unit 1 runs through between described throughhole portions and described plasma enhanced chemical vapor deposition battery lead plate 3 and separates by insulating part 2.Like this, the running fix unit 1 on plasma enhanced chemical vapor deposition battery lead plate 3 is a plurality of, and running fix unit 1 is preferably evenly distributed on described plasma enhanced chemical vapor deposition battery lead plate 3.Evenly arrange in running fix unit 1, thereby the electric field parallel with substrate that produces on described substrate also is evenly distributed; Preferably, evenly arrange on the directions X of plasma enhanced chemical vapor deposition battery lead plate 3 in running fix unit 1, and evenly arrange on the Y-direction of plasma enhanced chemical vapor deposition battery lead plate 3 in running fix unit 1, wherein directions X and Y-direction all are parallel to substrate surface, and mutually vertical.On horizontal plane, running fix unit 1 evenly distributes on directions X and Y-direction, can realize direction of an electric field regular along directions X or Y-direction, and electric field can cover the horizontal plane of whole substrate.
Obviously, the electric field that produces between running fix unit 1 and substrate has the electric field component on the direction parallel with substrate, also has the electric field component on the direction vertical with substrate simultaneously.Be subjected to the impact of factors in the plasma enhanced chemical vapor deposition film process, can cause the ununiformity of film forming in substrate.Running fix unit 1 produces the electric field of the direction vertical with substrate, can realize the voltage between the upper and lower base plate in local modulation plasma enhanced chemical vapor deposition process, thereby the one-tenth membrane voltage of different zones on the adjusting substrate, thereby realize the overall film forming uniformity of substrate surface.
Preferably, described plasma enhanced chemical vapor deposition electrode plate device also comprise be positioned at described plasma enhanced chemical vapor deposition battery lead plate 3, be used for heating the heating unit of described substrate, and/or be positioned at the cooling unit for cooling described substrate of described plasma enhanced chemical vapor deposition battery lead plate 3.Preferably, heating unit can be and is located at plasma enhanced chemical vapor deposition battery lead plate 3 interior electrically heated rods etc., and plasma enhanced chemical vapor deposition battery lead plate 3 is made of metal itself, and metal is good heat-transfer medium.When plasma enhanced chemical vapor deposition on substrate during deposited material layer, the deposition process of material layer has certain temperature requirement, therefore need heating unit heated substrates, heating unit to add thermogenetic heat and can be delivered to substrate by plasma enhanced chemical vapor deposition battery lead plate 3.Preferably, cooling unit can be and is located at plasma enhanced chemical vapor deposition battery lead plate 3 interior cooling water pipelines etc.After the deposited material layer deposition finished, perhaps the excess Temperature on substrate in the deposition material process, needed cooling unit that substrate is carried out cooling, and the low temperature of cooling generation can be delivered to substrate by plasma enhanced chemical vapor deposition battery lead plate 3.Preferably, described plasma enhanced chemical vapor deposition electrode plate device also comprises the temperature detecting unit for detection of described substrate temperature, and temperature detecting unit is arranged on substrate, for detection of the temperature of substrate.In the present embodiment, temperature detecting unit is specially temperature sensor, temperature sensor can detect in real time and display base plate on temperature.According to the temperature of temperature sensor indication, can control the work of heating unit or cooling unit, to realize the homogeneity of the substrate surface temperature in plasma enhanced chemical vapor deposition.
As shown in Figure 4, preferably, described running fix unit 1 comprise for the accommodation unit 5 of fixed support and be used for the top from or described substrate is placed on mobile unit 4 on described plasma enhanced chemical vapor deposition battery lead plate 3, described accommodation unit 5 nests together by flexible mode with described mobile unit 4; After described mobile unit 4 was placed on described plasma enhanced chemical vapor deposition battery lead plate 3 with described substrate, the outside surface of described mobile unit 4 flushed with the outside surface of described plasma enhanced chemical vapor deposition battery lead plate 3.Preferably, separate by insulating part 2 between described running fix unit 1 and described plasma enhanced chemical vapor deposition battery lead plate 3, be provided with through hole on described plasma enhanced chemical vapor deposition battery lead plate 3, described insulating part 2 is embedded on the hole wall of described through hole, described mobile unit 4 runs through described through hole, and described mobile unit 4 runs through between described throughhole portions and described plasma enhanced chemical vapor deposition battery lead plate 3 and separates by insulating part 2.In the plasma enhanced chemical vapor deposition electrode plate device, plasma enhanced chemical vapor deposition battery lead plate 3 maintains static, and mobile unit 4 runs through the through hole on plasma enhanced chemical vapor deposition battery lead plate 3 and is slidably connected with insulating part 2 on the through hole hole wall.Accommodation unit 5 comprises pedestal and the insulated column 9 that is connected with pedestal, and whole accommodation unit 5 maintains static, and mobile unit 4 moves up and down along the insulated column 9 that is connected with pedestal by under the control of travel switch.Running fix unit 1 specifically can adopt can be in the form of the interior flexible pillar (PIN) of plasma enhanced chemical vapor deposition battery lead plate 3.
Also have independent voltage supply lead 6 in certain running fix unit 1, be used for connecting running fix unit 1 and running fix cell voltage control unit; Simultaneously, also have temperature inductor wire 7, heating rod pipeline 8.When wanting moving substrate, mobile unit 4 can be stretched out from plasma enhanced chemical vapor deposition battery lead plate 3 and with substrate jack-up, thereby facilitates it to pick and place.When substrate being placed on plasma enhanced chemical vapor deposition battery lead plate 3, mobile unit 4 is retracted in plasma enhanced chemical vapor deposition battery lead plate 3 from the original jack-up position of stretching out, and the outside surface of mobile unit 4 flushes with the outside surface of plasma enhanced chemical vapor deposition battery lead plate 3.
Apply voltage by running fix cell voltage control unit to running fix unit 1, can form the electric field of level on substrate, thereby the charge movement on the driving substrate, electric charge is neutralized or dissipates when mobile in circuitous pattern (Pattern), therefore can greatly reduce plasma body charge accumulated in the deposited material layer process on the substrate surface of chemical vapour deposition, avoid occuring on substrate static and discharge.
Obviously, the electric field that produces between running fix unit 1 and substrate has the electric field component on the direction parallel with substrate, also has the electric field component on the direction vertical with substrate simultaneously.Be subjected to the impact of factors in the plasma enhanced chemical vapor deposition film process, can cause the ununiformity of film forming in substrate.Running fix unit 1 produces the electric field of the direction vertical with substrate, can realize the voltage in local modulation plasma enhanced chemical vapor deposition process, thereby the one-tenth membrane voltage of different zones in the adjusting substrate, thereby realize the overall film forming uniformity of substrate surface.
The utility model also provides a kind of plasma enhanced chemical vapor deposition unit, comprises the plasma enhanced chemical vapor deposition electrode plate device of embodiment 1 and embodiment 2.
Certainly, also should comprise other conventional components in the plasma enhanced chemical vapor deposition unit of the present embodiment, as vacuum chamber, another pole plate etc., because these all belong to prior art, therefore not describe in detail here.
Be understandable that, above embodiment is only the illustrative embodiments that adopts for principle of the present utility model is described, yet the utility model is not limited to this.For those skilled in the art, in the situation that do not break away from spirit of the present utility model and essence, can make various modification and improvement, these modification and improvement also are considered as protection domain of the present utility model.
Claims (10)
1. plasma enhanced chemical vapor deposition electrode plate device, comprise for the contacted plasma enhanced chemical vapor deposition battery lead plate of the substrate that will carry out plasma enhanced chemical vapor deposition, wherein, be provided with on described plasma enhanced chemical vapor deposition battery lead plate for the running fix unit that described substrate is pushed up from or is placed on described plasma enhanced chemical vapor deposition battery lead plate, it is characterized in that, described plasma enhanced chemical vapor deposition electrode plate device also comprises: the running fix cell voltage control unit of controlling the surface voltage of described running fix unit, be used for making described running fix unit to produce the electric field parallel with described substrate on described substrate.
2. plasma enhanced chemical vapor deposition electrode plate device according to claim 1, is characterized in that, separates by insulating part between described running fix unit and described plasma enhanced chemical vapor deposition battery lead plate.
3. plasma enhanced chemical vapor deposition electrode plate device according to claim 2, is characterized in that, the material of described insulating part is the heat transfer insulating material.
4. plasma enhanced chemical vapor deposition electrode plate device according to claim 2, it is characterized in that, be provided with through hole on described plasma enhanced chemical vapor deposition battery lead plate, described insulating part is embedded on the hole wall of described through hole, described running fix unit runs through described through hole, and described running fix unit runs through between described throughhole portions and described plasma enhanced chemical vapor deposition battery lead plate and separates by described insulating part.
5. plasma enhanced chemical vapor deposition electrode plate device according to claim 4, it is characterized in that, after described running fix unit was placed on described plasma enhanced chemical vapor deposition battery lead plate with described substrate, the outside surface of described running fix unit flushed with the outside surface of described plasma enhanced chemical vapor deposition battery lead plate.
6. plasma enhanced chemical vapor deposition electrode plate device according to claim 1, is characterized in that, described running fix unit is a plurality of.
7. plasma enhanced chemical vapor deposition electrode plate device according to claim 6, is characterized in that, a plurality of described running fixes unit is evenly distributed on described plasma enhanced chemical vapor deposition battery lead plate.
8. plasma enhanced chemical vapor deposition electrode plate device according to claim 1, it is characterized in that, also comprise be used to the heating unit that heats described running fix unit, and/or be used for the cooling unit of cooling described running fix unit, and/or for detection of the temperature detecting unit of described running fix cell temperature.
9. according to claim 1 ~ 8 described plasma enhanced chemical vapor deposition electrode plate devices of any one, it is characterized in that, described running fix unit comprise for the accommodation unit of fixed support and be used for the top from or described substrate is placed on mobile unit on described plasma enhanced chemical vapor deposition battery lead plate, described accommodation unit and described mobile unit nest together by the mode of stretching;
After described mobile unit was placed on described plasma enhanced chemical vapor deposition battery lead plate with described substrate, the outside surface of described mobile unit flushed with the outside surface of described plasma enhanced chemical vapor deposition battery lead plate.
10. a plasma enhanced chemical vapor deposition unit, is characterized in that, comprises the described plasma enhanced chemical vapor deposition electrode plate device of claim 1 ~ 9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220629223 CN203007417U (en) | 2012-11-23 | 2012-11-23 | Plasma enhanced chemical vapor deposition plate electrode device and deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220629223 CN203007417U (en) | 2012-11-23 | 2012-11-23 | Plasma enhanced chemical vapor deposition plate electrode device and deposition device |
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| CN203007417U true CN203007417U (en) | 2013-06-19 |
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| CN 201220629223 Expired - Fee Related CN203007417U (en) | 2012-11-23 | 2012-11-23 | Plasma enhanced chemical vapor deposition plate electrode device and deposition device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104049392A (en) * | 2014-06-10 | 2014-09-17 | 京东方科技集团股份有限公司 | Device used for preventing display panel paradoxical discharge and display panel preparation system |
-
2012
- 2012-11-23 CN CN 201220629223 patent/CN203007417U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104049392A (en) * | 2014-06-10 | 2014-09-17 | 京东方科技集团股份有限公司 | Device used for preventing display panel paradoxical discharge and display panel preparation system |
| CN104049392B (en) * | 2014-06-10 | 2017-01-18 | 京东方科技集团股份有限公司 | Device used for preventing display panel paradoxical discharge and display panel preparation system |
| US9775224B2 (en) | 2014-06-10 | 2017-09-26 | Boe Technology Group Co., Ltd. | Discharge apparatus and display panel preparation system based thereon |
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Granted publication date: 20130619 Termination date: 20211123 |
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