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CN202423302U - 一种晶体硅太阳能电池 - Google Patents

一种晶体硅太阳能电池 Download PDF

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Publication number
CN202423302U
CN202423302U CN 201120537550 CN201120537550U CN202423302U CN 202423302 U CN202423302 U CN 202423302U CN 201120537550 CN201120537550 CN 201120537550 CN 201120537550 U CN201120537550 U CN 201120537550U CN 202423302 U CN202423302 U CN 202423302U
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battery
silicon solar
main electrode
utility
model
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倪志春
王继磊
张永红
赵建华
王艾华
邱凯坤
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CHINA SUNERGY (NANJING) Co Ltd
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CHINA SUNERGY (NANJING) Co Ltd
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Priority to PCT/CN2012/085823 priority patent/WO2013091476A1/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Development (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本实用新型公开了一种晶体硅太阳能电池，包括设在电池正面的主电极，其特征是：主电极的数量为4～10根，每根主电极的宽度为0.1～3mm。本实用新型由于增加了电池主电极的数量，使得收集电流回路缩短，从而有效的降低了电池串联电阻Rse，使得电池输出效率得到提高。

Description

一种晶体硅太阳能电池
技术领域
本实用新型涉及一种晶体硅太阳能电池。 
背景技术
目前丝网印刷的太阳能电池正面主电极，按照晶体硅材料的尺寸，边长125mm的电池一般采用2条主电极结构（如图1），边长156mm电池片一般采用3条主电极结构（如图2），晶体硅太阳电池的等效电路如图（图3），而随着市场对电池效率越来越高的要求，希望尽可能的减小电池的串联电阻。 
根据等效电路，可以写出p-n结太阳电池的I-V特性方程如下： 
其中二极管正向电流I D 的数值一般依赖与所用的材料和扩散过程，在分析电极结构时可以认为是一个常数；Rse为串联电阻，Rsh为并联电阻；当并联电阻R sh 足够大，并联电阻引起的旁路电流可以忽略不记，输出功率可以表示为：，其中V oc 为开路电压；可以看出串联电阻Rse的降低能够有效的提高电池的输出功率及效率；对于高效电池，由于输出电流越大，Rse的影响越大。
实用新型内容
本实用新型所要解决的问题在于，克服现有技术存在的缺陷，提供一种晶体硅太阳能电池，增加电池主电极的数量，使得收集电流回路缩短，从而有效的降低电池串联电阻Rse；提高电池输出效率。 
本实用新型一种晶体硅太阳能电池，包括设在电池正面的主电极，其特征是：主电极的数量为4～10根，每根主电极的宽度为0.1～3mm。 
电极的宽度最小可以设计成0.1mm，可以保证总的印刷面积保持不变，不会增加浆料的耗量而达到很好的效果。电极的形状可以是平头结构或尖头结构。 
电极数量、电极宽度、电极间距可参考下表进行设计（156电池为例）： 
电极数量（根） 4 5 6 7 8 9 10
电极间距（mm） 39.00 31.20 26.00 22.29 19.50 17.33 15.60
电极宽度（mm） 0.7-3 0.6-2.4 0.5-2 0.4-1.7 0.3-1.5 0.2-1.3 0.1-1.0
    本实用新型，由于增加了电池主电极的数量，使得收集电流回路缩短，从而有效的降低了电池串联电阻Rse，使得电池输出效率得到提高。
附图说明
图1是现有技术的S125太阳能电池正面主电极结构示意图： 
图2是现有技术的M156太阳能电池正面主电极结构示意图；
图3是晶体硅太阳电池的等效电路图；
图4是本实用新型晶体硅太阳能电池（S125）结构示意图（4条平头主电极）；
图5是本实用新型晶体硅太阳能电池（S156）结构示意图（4条尖头主电极）；
图6是本实用新型晶体硅太阳能电池（M156）结构示意图（10条主电极）；
具体实施方式
下面结合附图和实施例对本实用新型做详细说明。 
本实用新型的适用范围：适用于各种晶硅电池。根据不同电池结构要求和工艺匹配原则，电池片的主电极的数量可以设计成4-10根不等，主电极的宽度变化范围为0.1-3mm。主电极的端部可以是平头结构或尖头结构。 
实施例1：如图4所示，本实用新型S125晶体硅太阳能电池，在电池正面，设有4条平头主电极。主电极的宽度为3mm。 
实施例2、如图5所示，本实用新型S156晶体硅太阳能电池，在电池正面，设有4条尖头主电极。主电极的宽度为3mm。 
实施例3、如图6所示，本实用新型M156晶体硅太阳能电池，在电池正面，设有10条主电极。主电极的宽度为0.1mm。 

Claims (1)

1.一种晶体硅太阳能电池，包括设在电池正面的主电极，其特征是：主电极的数量为4～10根，每根主电极的宽度为0.1～3mm。
CN 201120537550 2011-12-21 2011-12-21 一种晶体硅太阳能电池 Expired - Fee Related CN202423302U (zh)

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CN 201120537550 CN202423302U (zh) 2011-12-21 2011-12-21 一种晶体硅太阳能电池
PCT/CN2012/085823 WO2013091476A1 (zh) 2011-12-21 2012-12-04 一种晶体硅太阳能电池

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013091476A1 (zh) * 2011-12-21 2013-06-27 中电电气（南京）光伏有限公司 一种晶体硅太阳能电池
CN103400870A (zh) * 2013-08-02 2013-11-20 浙江正泰太阳能科技有限公司 太阳能电池片及其电极图形设计和太阳能电池组件
CN103456803A (zh) * 2013-09-23 2013-12-18 常州天合光能有限公司 晶体硅太阳电池前电极
TWI502756B (zh) * 2012-11-09 2015-10-01 Big Sun Energy Technology Inc 具有粗細匯流排電極之太陽能電池
JP2019024141A (ja) * 2014-11-26 2019-02-14 エルジー エレクトロニクス インコーポレイティド 太陽電池モジュール
JP2021168405A (ja) * 2014-09-30 2021-10-21 エルジー エレクトロニクス インコーポレイティドLg Electronics Inc. 太陽電池及びそれを含む太陽電池パネル
US11769842B2 (en) 2014-09-30 2023-09-26 Shangrao Jinko Solar Technology Development Co., Ltd Solar cell and solar cell panel including the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
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EP3171412B1 (en) * 2015-11-17 2019-06-12 LG Electronics Inc. Apparatus and method for attaching interconnector of solar cell panel

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005093855A1 (ja) * 2004-03-29 2005-10-06 Kyocera Corporation 太陽電池モジュール及びこれを用いた太陽光発電装置
CN101241941A (zh) * 2007-02-06 2008-08-13 上海华达运新能源科技有限公司 一种硅光电池
CN101447339B (zh) * 2008-12-11 2011-06-01 彩虹集团公司 一种太阳能电池光阳极基板的制备方法
CN102130197A (zh) * 2010-12-31 2011-07-20 常州天合光能有限公司 一种反光与低电阻的晶体硅太阳电池组件及其连接焊带
CN202423302U (zh) * 2011-12-21 2012-09-05 中电电气（南京）光伏有限公司 一种晶体硅太阳能电池

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013091476A1 (zh) * 2011-12-21 2013-06-27 中电电气（南京）光伏有限公司 一种晶体硅太阳能电池
TWI502756B (zh) * 2012-11-09 2015-10-01 Big Sun Energy Technology Inc 具有粗細匯流排電極之太陽能電池
CN103400870A (zh) * 2013-08-02 2013-11-20 浙江正泰太阳能科技有限公司 太阳能电池片及其电极图形设计和太阳能电池组件
CN103456803A (zh) * 2013-09-23 2013-12-18 常州天合光能有限公司 晶体硅太阳电池前电极
JP2021168405A (ja) * 2014-09-30 2021-10-21 エルジー エレクトロニクス インコーポレイティドLg Electronics Inc. 太陽電池及びそれを含む太陽電池パネル
US11769842B2 (en) 2014-09-30 2023-09-26 Shangrao Jinko Solar Technology Development Co., Ltd Solar cell and solar cell panel including the same
JP2019024141A (ja) * 2014-11-26 2019-02-14 エルジー エレクトロニクス インコーポレイティド 太陽電池モジュール
US10879411B2 (en) 2014-11-26 2020-12-29 Lg Electronics Inc. Solar cell module

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