CN201936915U - LED (light-emitting diode) encapsulating structure and LED module thereof - Google Patents
LED (light-emitting diode) encapsulating structure and LED module thereof Download PDFInfo
- Publication number
- CN201936915U CN201936915U CN2010206744953U CN201020674495U CN201936915U CN 201936915 U CN201936915 U CN 201936915U CN 2010206744953 U CN2010206744953 U CN 2010206744953U CN 201020674495 U CN201020674495 U CN 201020674495U CN 201936915 U CN201936915 U CN 201936915U
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- wafer
- heat conduction
- conduction silver
- silver bullion
- led
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- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Abstract
The utility model provides an LED (light-emitting diode) encapsulating structure which comprises a chip, a metal wire, an electrode, a heat conduction silver block, a substrate, glass ceramic and a silica gel hemisphere, wherein the metal wire is electrically connected with the chip, the electrode is electrically connected with the metal wire, the heat conduction silver block is used for holding the chip, the substrate is used for holding the heat conduction silver block, the glass ceramic is arranged on the surface of the substrate, and the silica gel hemisphere is arranged on the glass ceramic. The utility model also provides the LED module. The LED (light-emitting diode) encapsulating structure and the LED module thereof have good heat dissipation property, and the illuminating efficiency and the lighting brightness are improved.
Description
Technical field
The utility model relates to a kind of light-emitting diode, and (Light Emitting Diode, LED) technology relate in particular to a kind of LED encapsulating structure and LED module thereof.
Background technology
Existing light fixture comprises incandescent lamp, common fluorescent lamp and LED light fixture etc., common fluorescent lamp is a gaseous discharge lamp, the photoelectric conversion efficiency of common fluorescent lamp is than incandescent lamp height, yet common fluorescent lamp requires high to operating ambient temperature, is not easy to start when temperature is low, heat is given birth in argon gas ionization during use in the common fluorescent lamp, thereby make mercury generation steam and send strong ultraviolet ray, common fluorescent lamp glimmers easily, influences user's eyesight.In addition, when the fluorescent tube of common fluorescent lamp when breaking, the luminescent substance that flows out in it pollutes the environment and the mankind is damaged.
Advantages such as the LED light fixture has the energy conversion efficiency height, on-off effect speed is fast, the life-span long, radiationless and low in energy consumption and being widely used.
LED is by three four compounds, as the GaAs(GaAs), the GaP(gallium phosphide), the GaAsP(gallium arsenide phosphide) etc. semiconductor make, its core is a PN junction.Therefore it has the I-N characteristic of general P-N knot, i.e. forward conduction is oppositely by, breakdown characteristics.In addition, under certain condition, it also has the characteristics of luminescence.Under forward voltage, electronics injects the P district by the N district, and the N district is injected by the P district in the hole.Minority carrier (few son) part that enters the other side zone is compound and luminous with majority carrier (many sons), as shown in Figure 1.
Suppose luminous generation in the P district, injected electrons and valence band hole are directly compound and luminous so, and be after perhaps being caught by luminescence center earlier, luminous with hole-recombination again.Except this luminous compound, also some electronics is caught by near non-luminescence center (this center between in the middle of conduction band, the band that is situated between), then again with hole-recombination, the energy of each release is little, can not form visible light.Luminous compound quantity is big more with respect to the ratio of non-luminous compound quantity, and photo-quantum efficiency is high more.Because compound luminous in few sub-diffusion region, so light is only being counted μ m with interior generation near the PN junction face.
Theory and practice proves that the peak wavelength λ of light is relevant with the semi-conducting material energy gap Eg of light-emitting zone.
If can produce visible light (wavelength is at 380nm purple light～780nm ruddiness), the Eg of semi-conducting material should be between 3.26～1.63eV.The light longer than red light wavelength is infrared light.Now existing infrared, red, yellow, green and blue light-emitting diode, but wherein blue light diode cost, price are very high, use not general.
Yet because the common radiating effect of LED lamp is bad, have a strong impact on LED useful life, also can cause luminous efficiency lower, even luminosity deficiency.
The utility model content
The technical problem that the utility model solves is to provide a kind of LED encapsulating structure and LED module thereof, perfect heat-dissipating, raising luminous efficiency, raising brightness of illumination.
The utility model provides a kind of LED encapsulating structure, and it comprises:
Wafer;
The plain conductor that is electrically connected mutually with wafer;
The electrode that is electrically connected mutually with plain conductor;
Be used to place the heat conduction silver bullion of wafer;
Be used to place the substrate of heat conduction silver bullion;
Be arranged on the glass ceramics on the surface of substrate; And
Be arranged on the silica gel hemisphere of the top of glass ceramics.
Further, described wafer and the contacted surface of heat conduction silver bullion, the surface area of contacted wafer is less than the surface area of heat conduction silver bullion.
Further, the described substrate surface of closing on wafer is coated with reflectance coating.
Further, described glass ceramics is a hollow structure, and the position of its hollow structure is provided with the heat conduction silver bullion.
Further, be provided with aluminum strip in heat conduction silver bullion inside.
Further, between wafer and heat conduction silver bullion, one deck tin cream is set.
The utility model also provides a kind of LED module, and it comprises:
A plurality of wafers;
The corresponding plain conductor that is electrically connected mutually with each wafer;
The electrode of corresponding each wafer that is electrically connected mutually with plain conductor;
Be used to place the heat conduction silver bullion of wafer;
Be used to place the substrate of heat conduction silver bullion;
Be arranged on the glass ceramics on the surface of substrate, electrode is arranged in the glass ceramics, and the electrode of corresponding different chips is arranged on the different layers of glass ceramics; And
Be arranged on the silica gel hemisphere of the top of glass ceramics.
Further, described wafer and the contacted surface of heat conduction silver bullion, the surface area of contacted wafer is less than the surface area of heat conduction silver bullion.
Further, the described substrate surface of closing on wafer is coated with reflectance coating.
Further, described glass ceramics is a hollow structure, and the position of its hollow structure is provided with the heat conduction silver bullion.
A kind of LED encapsulating structure and LED module thereof that the utility model provides are arranged on wafer on the heat conduction silver bullion, can dispel the heat well, improve luminous efficiency.
Description of drawings
Fig. 1 is an example structure schematic diagram of a kind of LED encapsulating structure of the utility model.
Fig. 2 is an example structure schematic diagram of a kind of LED module of the utility model.
Embodiment
Below in conjunction with drawings and Examples the utility model is elaborated.
See also Fig. 1, it is an example structure schematic diagram of a kind of LED encapsulating structure of the utility model.
A kind of LED encapsulating structure of the utility model, the plain conductors 12 that it comprises wafer 11, is electrically connected mutually with wafer 11, with plain conductor 12 mutual electrode 13, heat conduction silver bullion 14, substrate 15, glass ceramics 16 and the silica gel hemisphere 17 that are electrically connected.
Wherein, wafer 11 is arranged on the surface of heat conduction silver bullion 14, and wafer 11 and heat conduction silver bullion 14 contacted surfaces, and the surface area of contacted wafer 11 is less than the surface area of heat conduction silver bullion 14.
Heat conduction silver bullion 14 is arranged on the surface of substrate 15.
The surface that substrate 15 closes on wafer 11 is coated with reflectance coating.
Silica gel hemisphere 17 is arranged on the top of glass ceramics 16, and is oppositely arranged with wafer 11.
Certainly in order to save cost, can aluminum strip be set, save the consumption of silver in heat conduction silver bullion 14 inside.
Further, can between wafer 11 and heat conduction silver bullion 14, one deck tin cream be set.
See also Fig. 2, it is an example structure schematic diagram of a kind of LED module of the utility model.
Wherein, wafer 111 is arranged on the surface of heat conduction silver bullion 114, and wafer 111 and heat conduction silver bullion 114 contacted surfaces, and the surface area of contacted wafer 111 is less than the surface area of heat conduction silver bullion 114.
Heat conduction silver bullion 114 is arranged on the surface of substrate 115.
The surface that substrate 115 closes on wafer 111 is coated with reflectance coating.
Silica gel hemisphere 117 is arranged on the top of glass ceramics 116, and is oppositely arranged with wafer 111.
Equally,, can aluminum strip be set, save the consumption of silver in heat conduction silver bullion 114 inside in order to save cost.
Further, can between wafer 111 and heat conduction silver bullion 114, one deck tin cream be set.
In sum, the utility model can dispel the heat well by on the heat conduction silver bullion wafer being set, and improves luminous efficiency, improves brightness of illumination.
In the above-described embodiments, only the utility model has been carried out exemplary description, but those skilled in the art can carry out various modifications to the utility model after reading present patent application under the situation that does not break away from spirit and scope of the present utility model.
Claims (10)
1. a LED encapsulating structure is characterized in that, comprising:
Wafer;
The plain conductor that is electrically connected mutually with wafer;
The electrode that is electrically connected mutually with plain conductor;
Be used to place the heat conduction silver bullion of wafer;
Be used to place the substrate of heat conduction silver bullion;
Be arranged on the glass ceramics on the surface of substrate; And
Be arranged on the silica gel hemisphere of the top of glass ceramics.
2. a kind of LED encapsulating structure according to claim 1 is characterized in that,
Described wafer and the contacted surface of heat conduction silver bullion, the surface area of contacted wafer is less than the surface area of heat conduction silver bullion.
3. a kind of LED encapsulating structure according to claim 1 is characterized in that the surface that described substrate closes on wafer is coated with reflectance coating.
4. a kind of LED encapsulating structure according to claim 1 is characterized in that described glass ceramics is a hollow structure, and the position of its hollow structure is provided with the heat conduction silver bullion.
5. a kind of LED encapsulating structure according to claim 1 is characterized in that, is provided with aluminum strip in heat conduction silver bullion inside.
6. a kind of LED encapsulating structure according to claim 1 is characterized in that, between wafer and heat conduction silver bullion one deck tin cream is set.
7. a LED module is characterized in that, comprising:
A plurality of wafers;
The corresponding plain conductor that is electrically connected mutually with each wafer;
The electrode of corresponding each wafer that is electrically connected mutually with plain conductor;
Be used to place the heat conduction silver bullion of wafer;
Be used to place the substrate of heat conduction silver bullion;
Be arranged on the glass ceramics on the surface of substrate, electrode is arranged in the glass ceramics, and the electrode of corresponding different chips is arranged on the different layers of glass ceramics; And
Be arranged on the silica gel hemisphere of the top of glass ceramics.
8. a kind of LED module according to claim 7 is characterized in that,
Described wafer and the contacted surface of heat conduction silver bullion, the surface area of contacted wafer is less than the surface area of heat conduction silver bullion.
9. a kind of LED module according to claim 7 is characterized in that the surface that described substrate closes on wafer is coated with reflectance coating.
10. a kind of LED module according to claim 7 is characterized in that described glass ceramics is a hollow structure, and the position of its hollow structure is provided with the heat conduction silver bullion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206744953U CN201936915U (en) | 2010-12-22 | 2010-12-22 | LED (light-emitting diode) encapsulating structure and LED module thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206744953U CN201936915U (en) | 2010-12-22 | 2010-12-22 | LED (light-emitting diode) encapsulating structure and LED module thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201936915U true CN201936915U (en) | 2011-08-17 |
Family
ID=44448429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206744953U Expired - Fee Related CN201936915U (en) | 2010-12-22 | 2010-12-22 | LED (light-emitting diode) encapsulating structure and LED module thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201936915U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103107276A (en) * | 2012-12-07 | 2013-05-15 | 孙雪刚 | Light-emitting diode (LED) packaging structure |
| CN103366645A (en) * | 2013-03-22 | 2013-10-23 | 美的集团武汉制冷设备有限公司 | Light emitting display device |
| CN108538999A (en) * | 2012-09-25 | 2018-09-14 | Lg伊诺特有限公司 | Light emitting device package |
-
2010
- 2010-12-22 CN CN2010206744953U patent/CN201936915U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108538999A (en) * | 2012-09-25 | 2018-09-14 | Lg伊诺特有限公司 | Light emitting device package |
| CN103107276A (en) * | 2012-12-07 | 2013-05-15 | 孙雪刚 | Light-emitting diode (LED) packaging structure |
| CN103366645A (en) * | 2013-03-22 | 2013-10-23 | 美的集团武汉制冷设备有限公司 | Light emitting display device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: JIANGSU HEXAHEDRON AUTOMOBILE INDUSTRY CO., LTD. Free format text: FORMER NAME: YANCHENG LIUFANG OPTOELECTRONICS TECHNOLOGY CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 1508 room 18, China Merchants Building, 224051 Songjiang Road, Yancheng economic and Technological Development Zone, Jiangsu Patentee after: JIANGSU LIUFANGTI VEHICLE INDUSTRY CO., LTD. Address before: 224051 No. 105 Wen Gang South Road, Jiangsu, Yancheng City Patentee before: Yancheng Liufang Optoelectronics Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110817 Termination date: 20151222 |
|
| EXPY | Termination of patent right or utility model |