CN201364460Y - Double wafer stage exchanging device of photo-etching machine - Google Patents
Double wafer stage exchanging device of photo-etching machine Download PDFInfo
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- CN201364460Y CN201364460Y CNU200920105253XU CN200920105253U CN201364460Y CN 201364460 Y CN201364460 Y CN 201364460Y CN U200920105253X U CNU200920105253X U CN U200920105253XU CN 200920105253 U CN200920105253 U CN 200920105253U CN 201364460 Y CN201364460 Y CN 201364460Y
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- 238000001259 photo etching Methods 0.000 title claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 229910000831 Steel Inorganic materials 0.000 claims description 9
- 239000010959 steel Substances 0.000 claims description 9
- 238000006073 displacement reaction Methods 0.000 claims description 6
- 230000036316 preload Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 75
- 238000001459 lithography Methods 0.000 abstract description 21
- 238000003032 molecular docking Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 3
- 230000009977 dual effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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Abstract
一种光刻机硅片台双台交换装置,该装置含有基台,两个预处理工位和一个曝光工位。在基台上设有运行于预处理工位硅片台,运行于曝光工位的硅片台。在基台两侧长边边缘分别设置有一条直线电机定子与两个X方向运动的单自由度驱动单元组成直线电机,一条Y方向的导轨穿过硅片台,Y方向的导轨分别与基台两侧的X方向运动的单自由度驱动单元联结,共同驱动硅片台在X-Y平面运动;本实用新型避免了只有硅片台参与交换所带来的要求极高的导轨对接精度,以及需增加对接辅助装置等缺陷,大大简化了系统结构,二是该系统双台交换采用4个完全相同的单自由度驱动单元实现,系统的复杂性大大降低。
The invention discloses a dual-table exchanging device for silicon wafers of a lithography machine, which comprises a base table, two pretreatment stations and one exposure station. The base platform is provided with a silicon wafer stage running on a pretreatment station and a silicon wafer stage running on an exposure station. A linear motor stator and two single-degree-of-freedom drive units moving in the X direction are respectively arranged on the long sides of the abutment to form a linear motor. A guide rail in the Y direction passes through the wafer stage, and the guide rails in the Y direction are connected to the abutment respectively. The single-degree-of-freedom drive units moving in the X direction on both sides are connected to jointly drive the silicon wafer stage to move in the X-Y plane; the utility model avoids the extremely high precision of guide rail docking caused by only the silicon wafer stage participating in the exchange, and Defects such as the need to add docking auxiliary devices greatly simplify the system structure. Second, the system’s dual-unit exchange is realized by four identical single-degree-of-freedom drive units, which greatly reduces the complexity of the system.
Description
技术领域 technical field
本实用新型涉及一种光刻机硅片台双台交换装置,该装置应用于半导体光刻机中,属于半导体制造设备技术领域。The utility model relates to a dual-table exchanging device for silicon chip tables of a lithography machine. The device is applied to a semiconductor lithography machine and belongs to the technical field of semiconductor manufacturing equipment.
背景技术 Background technique
在集成电路芯片的生产过程中,芯片的设计图形在硅片表面光刻胶上的曝光转印(光刻)是其中最重要的工序之一,该工序所用的设备称为光刻机(曝光机)。光刻机的分辨率和曝光效率极大的影响着集成电路芯片的特征线宽(分辨率)和生产率。而作为光刻机关键系统的硅片超精密运动定位系统(以下简称为硅片台)的运动精度和工作效率,又在很大程度上决定了光刻机的分辨率和曝光效率。In the production process of integrated circuit chips, the exposure transfer (photolithography) of the design pattern of the chip on the photoresist on the surface of the silicon wafer is one of the most important processes. The equipment used in this process is called a photolithography machine (exposure machine). The resolution and exposure efficiency of the lithography machine greatly affect the characteristic line width (resolution) and productivity of the integrated circuit chip. As the key system of the lithography machine, the motion accuracy and work efficiency of the silicon wafer ultra-precision motion positioning system (hereinafter referred to as the wafer stage) largely determine the resolution and exposure efficiency of the lithography machine.
步进扫描投影光刻机基本原理如图1所示。来自光源45的深紫外光透过掩模版47、透镜系统49将掩模版上的一部分图形成像在硅片50的某个Chip上。掩模版和硅片反向按一定的速度比例作同步运动,最终将掩模版上的全部图形成像在硅片的特定芯片(Chip)上。The basic principle of the step-and-scan projection lithography machine is shown in Figure 1. The deep ultraviolet light from the light source 45 passes through the reticle 47 and the lens system 49 to image a part of the pattern on the reticle on a chip of the silicon wafer 50 . The reticle and the silicon wafer move synchronously in reverse at a certain speed ratio, and finally image all the patterns on the reticle on a specific chip (Chip) of the silicon wafer.
硅片台运动定位系统的基本作用就是在曝光过程中承载着硅片并按设定的速度和方向运动,以实现掩模版图形向硅片上各区域的精确转移。由于芯片的线宽非常小(目前最小线宽已经达到45nm),为保证光刻的套刻精度和分辨率,就要求硅片台具有极高的运动定位精度;由于硅片台的运动速度在很大程度上影响着光刻的生产率,从提高生产率的角度,又要求硅片台的运动速度不断提高。The basic function of the movement positioning system of the silicon wafer stage is to carry the silicon wafer and move according to the set speed and direction during the exposure process, so as to realize the precise transfer of the mask pattern to each area on the silicon wafer. Since the line width of the chip is very small (currently the minimum line width has reached 45nm), in order to ensure the overlay accuracy and resolution of lithography, the silicon wafer stage is required to have extremely high motion positioning accuracy; since the movement speed of the silicon wafer stage is within It greatly affects the productivity of lithography, and from the perspective of improving productivity, it also requires the movement speed of the silicon wafer table to be continuously improved.
传统的硅片台,如专利EP 0729073和专利US 5996437所描述的,光刻机中只有一个硅片运动定位单元,即一个硅片台。调平调焦等准备工作都要在上面完成,这些工作所需的时间很长,特别是对准,由于要求进行精度极高的低速扫描(典型的对准扫描速度为1mm/s),因此所需时间很长。而要减少其工作时间却非常困难。这样,为了提高光刻机的生产效率,就必须不断提高硅片台的步进和曝光扫描的运动速度。而速度的提高将不可避免导致系统动态性能的恶化,需要采取大量的技术措施保障和提高硅片台的运动精度,为保持现有精度或达到更高精度要付出的代价将大大提高。In the traditional wafer stage, as described in patent EP 0729073 and patent US 5996437, there is only one wafer motion positioning unit in the lithography machine, that is, a wafer stage. The preparatory work such as leveling and focusing must be done on it. These tasks take a long time, especially for alignment. Due to the requirement of extremely high-precision low-speed scanning (typical alignment scanning speed is 1mm/s), so It takes a long time. It is very difficult to reduce their working hours. In this way, in order to improve the production efficiency of the lithography machine, it is necessary to continuously increase the moving speed of the stepping of the silicon wafer stage and the exposure scanning. The increase in speed will inevitably lead to the deterioration of the dynamic performance of the system, and a large number of technical measures need to be taken to ensure and improve the motion accuracy of the silicon wafer stage, and the price to be paid to maintain the existing accuracy or achieve higher accuracy will be greatly increased.
专利W098/40791(公开日期:1998.9.17;国别:荷兰)所描述的结构采用双硅片台结构,将上下片、预对准、对准等曝光准备工作转移至第二个硅片台上,且与曝光硅片台同时独立运动。在不提高硅片台运动速度的前提下,曝光硅片台大量的准备工作由第二个硅片台分担,从而大大缩短了每片硅片在曝光硅片台上的工作时间,大幅度提高了生产效率。然而该系统存在的主要缺点在于硅片台系统的非质心驱动问题。The structure described in patent W098/40791 (publication date: 1998.9.17; country: the Netherlands) adopts a double wafer stage structure, and transfers exposure preparations such as loading and unloading, pre-alignment, and alignment to the second wafer stage on, and move independently with the exposure wafer stage at the same time. On the premise of not increasing the movement speed of the wafer stage, a large amount of preparation work for the exposure wafer stage is shared by the second wafer stage, thus greatly shortening the working time of each wafer on the exposure wafer stage and greatly improving production efficiency. However, the main disadvantage of this system is the non-centroid driving problem of the wafer stage system.
本申请人在2007年申请的发明专利“一种光刻机硅片台双台交换系统”(公开号:CN101101454)公开了一种光刻机的双台交换系统,其具有结构简单,空间利用率高等优点,提高了光刻机的曝光效率。但是该双硅片台系统也存在一些问题,一是在硅片台交换时气浮轴承需交换导向面,导致对硅片台尺寸一致性有极高的精度要求,零部件的加工和装配的精度都要求微米级以上;二是参与交换的导轨之间很难安装用于检测相互位置的传感器,上直线导轨之间可能发生碰撞;三是硅片台系统非质心驱动等。The applicant's invention patent "a dual-stage exchange system for lithography machine silicon wafers" (publication number: CN101101454) disclosed in 2007 discloses a dual-stage exchange system for lithography machines, which has a simple structure and space utilization. The advantages of high efficiency improve the exposure efficiency of the lithography machine. However, there are still some problems in this double wafer stage system. First, the air bearing needs to exchange the guide surface when the wafer stage is exchanged, resulting in extremely high precision requirements for the size consistency of the wafer stage, and the processing and assembly of parts. The accuracy is required to be above the micron level; the second is that it is difficult to install sensors for detecting mutual positions between the guide rails involved in the exchange, and collisions may occur between the upper linear guide rails; the third is the non-centroid drive of the silicon wafer stage system.
实用新型内容 Utility model content
针对现有技术的不足和缺陷,本实用新型的目的是提供一种光刻机硅片台双台交换系统,以克服已有硅片台双台交换系统存在非质心驱动、结构复杂以及要求极高的导轨对接精度等缺点,使其具有结构简单,空间利用率高以及无需对接辅助装置等优点,进而提高光刻机的曝光效率。Aiming at the deficiencies and defects of the prior art, the purpose of this utility model is to provide a double-swap exchange system for photolithography machines to overcome the non-centroid drive, complex structure and extremely demanding The disadvantages of high rail butt joint accuracy make it have the advantages of simple structure, high space utilization and no need for docking auxiliary devices, thereby improving the exposure efficiency of the lithography machine.
本实用新型的技术方案如下:The technical scheme of the utility model is as follows:
一种光刻机硅片台双台交换装置,该装置含有基台(1),两个预处理工位(2)、(4),曝光工位(3);A dual-stage exchanging device for silicon wafer stages of a lithography machine, the device includes a base stage (1), two pretreatment stations (2), (4), and an exposure station (3);
所述在基台(1)上设有运行于预处理工位(2)的硅片台(16)、运行于曝光工位(3)的硅片台(17);The base platform (1) is provided with a silicon wafer stage (16) operating at the pretreatment station (2) and a silicon wafer stage (17) operating at the exposure station (3);
所述在基台(1)两侧长边边缘X方向分别设置有一条直线电机磁钢定子(9)和(10),由X方向运动的第一单自由度驱动单元(5),第二单自由度驱动单元(6)共用直线电机定子磁钢(9),所述由X方向运动的第三单自由度驱动单元(7),第四单自由度驱动单元(8)共用直线电机定子磁钢(10);A linear motor magnetic steel stator (9) and (10) are respectively arranged in the X direction on the long side edges on both sides of the abutment (1), and the first single-degree-of-freedom drive unit (5) moved by the X direction, the second The single-degree-of-freedom drive unit (6) shares the linear motor stator magnet (9), the third single-degree-of-freedom drive unit (7) moving in the X direction, and the fourth single-degree-of-freedom drive unit (8) share the linear motor stator Magnetic steel (10);
所述两侧长边边缘Y方向的导轨(18)穿过硅片台(16)并驱动硅片台(16)沿Y方向运动,且Y方向的导轨(18)分别与X方向运动的第一单自由度驱动单元(5)和第三单自由度驱动单元(7)联结,共同驱动硅片台(16)在X-Y平面运动;The guide rails (18) in the Y direction of the long side edges on both sides pass through the silicon wafer stage (16) and drive the silicon wafer stage (16) to move along the Y direction, and the guide rails (18) in the Y direction are respectively connected with the first one moving in the X direction. A single-degree-of-freedom driving unit (5) is connected with a third single-degree-of-freedom driving unit (7) to jointly drive the silicon wafer stage (16) to move in the X-Y plane;
所述两侧长边边缘Y方向的导轨(19)穿过硅片台(17)并驱动硅片台(17)沿Y方向运动,并且Y方向的导轨(19)分别与X方向运动的第二单自由度驱动单元(6)和第四单自由度驱动单元(8)联结,共同驱动硅片台(17)在X-Y平面运动;The guide rails (19) in the Y direction of the long side edges on both sides pass through the silicon wafer stage (17) and drive the silicon wafer stage (17) to move along the Y direction, and the guide rails (19) in the Y direction are respectively connected with the first one moving in the X direction. The second single-degree-of-freedom driving unit (6) is connected with the fourth single-degree-of-freedom driving unit (8) to jointly drive the silicon wafer stage (17) to move in the X-Y plane;
所述在基台(1)周围分别布置有测量X方向位移的双频激光干涉仪(11)和(15),在测量Y方向位移的双频激光干涉仪(12)、(13)和(14)。The dual-frequency laser interferometers (11) and (15) for measuring the displacement in the X direction are respectively arranged around the base station (1), and the dual-frequency laser interferometers (12), (13) and (15) for measuring the displacement in the Y direction 14).
本实用新型的技术特征还在于:所述的上直线导轨和下直线导轨上均安装有线性光栅,用于作双自由度驱动单元的位置反馈。The technical feature of the utility model is that: linear gratings are installed on the upper linear guide rail and the lower linear guide rail, which are used for position feedback of the two-degree-of-freedom drive unit.
本实用新型的又一技术特征是:该系统还包含用于直线电机运动位置检测的线性光栅和用于硅片台运动位置反馈的双频激光干涉仪。Another technical feature of the utility model is: the system also includes a linear grating for detecting the motion position of the linear motor and a dual-frequency laser interferometer for the feedback of the motion position of the silicon wafer stage.
本实用新型与现有技术相比,具有以下突出性的优点:一是该系统的有两个预处理工位,包括硅片台,连接的两个单自由度驱动单元和Y方向导轨在内的整体结构交换,因此避免了只交换硅片台所带来的要求极高的导轨对接精度,以及需增加对接辅助装置等缺陷,大大简化了系统结构,二是该系统双台交换采用4个完全相同的单自由度驱动单元实现,系统的复杂性大大降低。Compared with the prior art, the utility model has the following outstanding advantages: one is that the system has two pretreatment stations, including the wafer table, two connected single-degree-of-freedom drive units and the Y-direction guide rail The exchange of the overall structure avoids the extremely high precision of guide rail docking caused by only exchanging the silicon wafer table, and the need to increase the docking auxiliary device and other defects, which greatly simplifies the system structure. The second is that the system uses four The exact same single-degree-of-freedom drive unit is realized, and the complexity of the system is greatly reduced.
附图说明 Description of drawings
图1为本实用新型提供的光刻机硅片台双台交换系统结构图。FIG. 1 is a structural diagram of a double-swapping system for silicon wafer tables of a lithography machine provided by the present invention.
图2a为本实用新型提供的光刻机硅片台双台交换系统的交换过程1。Fig. 2a is the
图2b为本实用新型提供的光刻机硅片台双台交换系统的交换过程2。Fig. 2b is the
图中:In the picture:
1:基台1: Abutment
2:预处理工位2: Pretreatment station
3:曝光工位3: Exposure station
4:预处理工位4: Pretreatment station
5:单自由度驱动单元5: Single degree of freedom drive unit
6:单自由度驱动单元6: Single degree of freedom drive unit
7:单自由度驱动单元7: Single degree of freedom drive unit
8:单自由度驱动单元8: Single degree of freedom drive unit
9:直线电机定子磁钢9: Linear motor stator magnet
10:直线电机定子磁钢10: Linear motor stator magnet
11:双频激光干涉仪11: Dual frequency laser interferometer
12:双频激光干涉仪12: Dual frequency laser interferometer
13:双频激光干涉仪13: Dual frequency laser interferometer
14:双频激光干涉仪14: Dual frequency laser interferometer
15:双频激光干涉仪15: Dual frequency laser interferometer
16:硅片台16: Wafer table
17:硅片台17: Wafer table
18:Y方向导轨18: Y direction guide rail
19:Y方向导轨19: Y direction guide rail
具体实施方式 Detailed ways
图1显示了光刻机硅片台双台交换系统的结构示意图,该系统含有基台1,两个预处理工位2和4,一个曝光工位3。如图1所示,硅片台16运行于预处理工位2,硅片台17运行于曝光工位3。两侧长边边缘即X方向分别设置有一条直线电机磁钢定子9和10,由X方向运动的单自由度驱动单元5和6共用直线电机定子9,相同的,由X方向运动的单自由度驱动单元7和8共用直线电机定子10;Y方向的导轨18穿过硅片台16并驱动硅片台16沿Y方向运动,并且Y方向的导轨18分别与X方向运动的单自由度驱动单元5和7联结,共同驱动硅片台16在X-Y平面运动,相同的,Y方向的导轨19穿过硅片台17并驱动硅片台17沿Y方向运动,并且Y方向的导轨19分别与X方向运动的单自由度驱动单元6和8联结,共同驱动硅片台17在X-Y平面运动;在基台周围分别布置有测量X方向位移的双频激光干涉仪11和15,以及测量Y方向位移的双频激光干涉仪12、13和14。FIG. 1 shows a schematic diagram of the structure of a double-swap exchange system for a lithography machine. The system includes a
硅片台底部装有真空预载气浮轴承,基台1上表面为导向面,Y方向导轨从硅片台内部贯穿,Y方向导轨上安装有直线电机定子磁钢,线圈作为直线电机动子安装在硅片台上,在硅片台两个内侧垂直面装有闭式预载气浮轴承来约束Y方向导轨与硅片台沿Y方向的相对运动。The bottom of the wafer stage is equipped with a vacuum preloaded air bearing, the upper surface of the
单自由度驱动单元5、6、7和8的底部均装有直线电机线圈动子和真空预载气浮轴承,直线电机磁钢定子9和10分别安装在基台1长边两侧。单自由度驱动单元5和7与Y方向导轨18联接,驱动硅片台16沿X-Y平面运动。单自由度驱动单元6和8与Y方向导轨19联接,驱动硅片台17沿X-Y平面运动。The bottoms of the single-degree-of-
图2显示的是本发明提供的光刻机硅片台双台交换系统的交换过程。由于本发明方案中在基台1两侧分别设有一个预处理工位,为交换提供了便利。如图2(a)所示,当运行于曝光工位3的硅片台17完成曝光工作后,在单自由度驱动单元6和8以及Y方向导轨的配合下共同驱动硅片台17沿X方向运动至右侧预处理工位4,同时,在左侧预处理工位2等待的硅片台16在单自由度驱动单元6和8以及Y方向导轨的配合下共同驱动下沿X方向运动至中间曝光工位3并开始曝光工作。FIG. 2 shows the exchange process of the silicon wafer stage double exchange system of the lithography machine provided by the present invention. In the solution of the present invention, a pretreatment station is respectively provided on both sides of the
如图2(b)所示,当硅片台16完成曝光工作后沿X方向运动回左侧预处理工位2进行上下片等预处理,同时在完成与处理工作并等待在预处理工位4的硅片台17沿X方向向左运动至曝光工位3,进入下一个循环。As shown in Figure 2(b), when the
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CN102564303A (en) * | 2010-12-30 | 2012-07-11 | 上海微电子装备有限公司 | Measuring apparatus and measuring method |
CN102681363A (en) * | 2012-05-11 | 2012-09-19 | 清华大学 | Multi-stage exchange system and exchange method for multi-station silicon wafer stage |
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