CN201250284Y

CN201250284Y - Magnetic control sputtering device

Info

Publication number: CN201250284Y
Application number: CNU2008200302586U
Authority: CN
Inventors: 弥谦; 杭凌侠; 郭忠达; 梁海峰; 徐均琪; 孙国斌; 惠迎雪
Original assignee: Xian Technological University
Current assignee: Xian Technological University
Priority date: 2008-09-12
Filing date: 2008-09-12
Publication date: 2009-06-03
Anticipated expiration: 2018-09-12

Abstract

The utility model belongs to a magnetic control sputtering film coating technology and relates to a magnetic control sputtering device in particular. As a balancing magnetic control sputtering mode and a non-balancing magnetic control sputtering mode are adopted at current, even if a permanent magnet is used for moving or a plurality of solenoid coils are used for exchanging, the operating factor of a target material can only be improved by 20 to 25 percent as well; moreover, the problems of complex structure and high processing cost are existed. The magnetic control sputtering device comprises a magnet, a magnetizer, asubstrate and a sputtering target; the utility model is characterized in that the opposite magnetic poles of the magnet are relatively and fixedly arranged on the side surface of the sputtering target; a magnet confining magnetic field generated by the magnet is arranged between the substrate and the sputtering target; and the connection line of the two magnetic poles is parallel to the surface of the target. The utility model can overcome the problems of low operating factor of the target material and low aggradation speed existed in the prior art.

Description

Magnetic control sputtering device

One, technical field

The utility model belongs to magnetron sputtering technology, is specifically related to a kind of magnetic control sputtering device.

Two, technical background

At present, magnetron sputtering technique is widely applied to surface modification, decorating film, optical thin film, in the film preparation such as superconducting thin film and function film, plasma coating technology and traditional hot evaporation coating a lot of superiority of comparing, ion beam sputtering, the energy of non-balance magnetically controlled sputter and pulsed arc deposition ion (atom) is higher 10～100 times than thermal evaporation, improved the gather density of film, make the characteristic of rete more trend towards massive material, thereby increased film strength, the mixing of surfacing has also improved sticking power between rete, sometimes even can reduce high tension stress in the rete.The raising of gather density has reduced the moisture sensitivity of rete, can also improve the stability of rete, improves humidity and chemical stability.Use magnetron sputtering technology to become the major technique approach that is coated with film on internal and international.

The magnetron sputtering mode is mainly unbalanced magnetron sputter and non-balance magnetically controlled sputter at present, and the electronics that the former glow discharge produces is strapped near the target surface tightly by horizontal magnetic field, and along with the increase of leaving the target surface distance, plasma concentration reduces rapidly.Have only neutral particle not to be subjected to the constraint in magnetic field can fly to substrate surface accordingly.And the energy of neutral particle is not enough to produce the rete of high-bond densification generally between 4～10eV at substrate surface; The latter strengthens a certain polar magnetic field or weaken for the opposite polar magnetic field of another polarity, this has just caused Distribution of Magnetic Field " non-equilibrium " guaranteeing that the target surface horizontal component ofmagnetic field retrains the secondary electron motion effectively, when can keep stable magnetron sputtering discharge, another part electronics can make the electronics of the target surface of escaping out fly to coating film area along the longitudinal magnetic field of the vertical target surface of strong magnetic pole generation.These electronics that fly away from target surface also can produce ionization by collision with neutral particle, further improve plated film spatial plasma density, not only help improving sedimentation rate, the bombardment of charged particle can change the microtexture of rete significantly, and then improves its physical property.

The key of magnetron sputtering technique is to improve target utilization and sedimentation rate, and in order to improve target utilization, the method that adopts usually has following several at present:

1, magnetic field scanning mode is moved the magnet below the target according to certain rules, make target material surface annular discharge ring move the utilization ratio that can improve target;

2, the variable magnetron sputtering in magnetic field, this technology and magnetic field scanning method are similar, need to control magnet in the sputter procedure and move, and by the interior outer magnetic pole in change magnetic field and the distance on target surface, change the fine adjustments of magneticstrength realization to sputtering raste and deposition thus;

3, " intelligent cathode " technology by adopt two adjustable solenoids in the negative electrode target, can change magneticstrength, sputter procedure can be divided in two stages of interior ECDC external diameter simultaneously, improves the utilization ratio of target.

Above-mentioned the whole bag of tricks all is the utilization ratio that improves target by the adjusting to magnetic field, even but practice finds to have adopted aforesaid method, target utilization still can only bring up to 20%～35%, simultaneously owing to adopt the prepared equipment of aforesaid method to move or the plurality of electromagnetic coil because of needs adopt permanent magnet, therefore also exist complex structure, the problem that the apparatus processing cost is high.

Two, utility model content

The utility model provides a kind of magnetic control sputtering device, to overcome the low and low problem of sedimentation rate of target utilization that prior art exists.

For achieving the above object, the technical solution adopted in the utility model is: a kind of magnetic control sputtering device, comprise magnet, magnetizer, substrate and sputtering target, it is characterized in that: the opposite magnetic pole relative fixed of described magnet is arranged on the side of sputtering target, the magnetic confinement magnetic field that magnet produces between substrate and sputtering target and two magnetic pole lines be parallel to target surface.

Above-mentioned magnet is electromagnet or permanent magnet.

It is how right that above-mentioned magnet can be provided with.

With respect to prior art, the utlity model has following advantage:

1, sputter is effective: (1) can realize that the surface of target produces even sputter, because magnetic field is above target, target thickness can suitably increase target thickness under the condition of cooling permission, and target utilization can reach more than 65%, has realized qualitative leap; (2) plasma area of magnetic mirror (magnetic confinement) magnetically confined expands substrate surface to, and substrate and film are subjected to particle bombardment and are heated, and have reduced the internal stress of film, improves the density of film.(3) opposite magnetic pole is fixed on the both sides of target, and spacing is bigger, and magnetic field distribution is weakened to the substrate direction gradually by target material surface, plasma area is extended to substrate surface, substrate and film are subjected to particle bombardment and are heated, and have reduced the internal stress of film, improve the density of film.

2, effectively improve sedimentation rate: magnet is all below target in the prior art, form racetrack torus at target surface, only could produce sputter strongly in the racetrack torus zone, and the utility model adopts the magnetic mirror form structure, electronics is reflected by magnetic field near magnetic pole the time, electronics is constrained on the spiral to-and-fro movement of target material surface zone, increased probability of collision with working gas, can all form plasma area on the whole surface of target, under effect of electric field, make positive ion quicken the collision sputtering target material, be implemented in the target whole regional sputter in surface, sedimentation rate can improve 2～3 times, has improved working efficiency.

3, one-piece construction is simple: adopt method of the present utility model, the target below no longer needs to be provided with magnet, also no longer needs travel mechanism, and is therefore simple in structure.

4, applied widely: as not to be only applicable in the middle of the preparation of multiple films such as surface modification film, decorating film, optical thin film, superconducting thin film and function film, simultaneously because adopted multiple permanent magnet body or electromagnet can also improve magneticstrength, enlarged plasma area simultaneously, plasma density also increases, and is specially adapted to the large-scale workpiece magnetron sputtering.

Four, description of drawings

Fig. 1～Fig. 3 is balance and a non-balance magnetically controlled sputter schematic diagram in the prior art;

Fig. 4 is the structural representation of embodiment 1;

Fig. 5 is the structural representation of embodiment 2;

Wherein, 1-substrate, 2-magnetic confinement magnetic field, 3-plasma zone, 4-electromagnet, 5-magnetizer, 6-sputtering target material, 7-sputtering target, 8-permanent magnet.

Five, embodiment

Below in conjunction with drawings and Examples the utility model is done and to be explained.

Referring to Fig. 1～Fig. 3, in the prior art, what mainly adopt is unbalanced magnetron sputter and non-balance magnetically controlled sputter.

Embodiment 1, referring to Fig. 4.A kind of magnetic control sputtering device comprises magnet, magnetizer 5, substrate 1 and sputtering target 7, and said magnet is an electromagnet 4, and its opposite magnetic pole relative fixed is arranged on the side of sputtering target.Magnetizer 5 constitutes below magnetic circuit closure.

Its principle of work is: electromagnet 4 energisings, in sputtering target 7 and substrate 1 formed space, produce magnetic confinement magnetic field 2, make electronics be constrained on the target material surface zone and carry out the spiral to-and-fro movement, increased probability of collision with working gas, form plasma zone 3 on sputtering target 7 surfaces, under effect of electric field, positive ion quickens the collision target as sputter surface formation film of atomic deposition to sputtering target material 6 that come out.

Present embodiment is particularly useful for making miniature workpiece.

Embodiment 2, referring to Fig. 5.A kind of magnetic control sputtering device comprises magnet, magnetizer 5, substrate 1 and sputtering target 7, and said magnet is a permanent magnet 8, and permanent magnet 8 comprises three couple who is prepared into bar shaped, these three pairs of permanent magnets 8 from inside to outside successively relative fixed be arranged on the side of sputtering target 7.

Its principle of work is: produce magnetic confinement magnetic field 2 in the space that the three pairs of permanent magnets 5 form between substrate 1, sputtering target 7, principle of work is with embodiment 1, different places be adopted many to permanent magnet, can effectively improve magneticstrength like this, electronics is constrained on spiral to-and-fro movement in the bigger zone, target material surface top, increased the probability of collision with working gas, the bombardment effect that has improved ion team workpiece surface.

Present embodiment is particularly useful for making large-scale workpiece.

When magnetic pole was provided with, its position was in the near surface of sputtering target 7 substantially or slightly exceeds the surface of sputtering target 7, as long as can produce magnetic confinement magnetic field 2 in sputtering target 7 and substrate 1 formed space.

Claims

1, a kind of magnetic control sputtering device, comprise magnet, magnetizer (5), substrate (1) and sputtering target (7), it is characterized in that: the opposite magnetic pole relative fixed of described magnet is arranged on the side of sputtering target (7), and the magnetic confinement magnetic field (2) that magnet produces is positioned between substrate (1) and the sputtering target (7) and two magnetic pole lines are parallel to target surface.

2, a kind of magnetic control sputtering device according to claim 1 is characterized in that: described magnet is electromagnet (4) or permanent magnet (8).

3, a kind of magnetic control sputtering device according to claim 1 and 2, it is characterized in that: it is how right that described magnet can be provided with.