CN200981899Y - Guide mould structure for growing formed single-crystal aluminum oxide - Google Patents
Guide mould structure for growing formed single-crystal aluminum oxide Download PDFInfo
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- CN200981899Y CN200981899Y CN 200620075673 CN200620075673U CN200981899Y CN 200981899 Y CN200981899 Y CN 200981899Y CN 200620075673 CN200620075673 CN 200620075673 CN 200620075673 U CN200620075673 U CN 200620075673U CN 200981899 Y CN200981899 Y CN 200981899Y
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Abstract
The utility model belongs to the guided mode structure of growing molding monocrystalline hydrogenated aluminium porcelain, which is characterized of slight difference in temperature inner, high rate of finished products in crystallization of monocrystalline hydrogenated aluminium porcelain, low cost and agreement with commercial batch process. The utility model comprises a copple, wherein the copple is mounted in a heating apparatus by holding handle, the heater is installed on a electropad, a heat preservation screen is provided outside the heater, a crystallizer is positioned in the copple, a seed crystal is arranged above the crystallization platform disposed on the crystallizer, and the seed crystal is connected with a shaft connecting pipe for seed crystal. The guided mode structure is characterize in that the copple is in a shape of rectangle or rectangular strip whose two ends are in a circular arc shape, the crystallizers are arranged along the central line in the direction of copple in length, and the heater is in a shape of rectangle or rectangular strip whose two ends are in a circular arc shape.
Description
(1) technical field
The utility model relates in order to growth shaping single crystal alumina-ceramic technical field, is specially the guided-mode structure in order to the growth shaping single crystal alumina ceramics.
(2) background technology
Production moulding signle crystal alumina porcelain adopts high-frequency induction heating or graphite resistance heating usually both at home and abroad, and its crucible is generally the cylinder bodily form.And the center temperature difference of the periphery of cylinder bodily form crucible and crucible is big and the temperature field is unstable, form big crystal grain on-monocrystalline structure or pattern structure during the crystallization of signle crystal alumina porcelain easily, the crystalline internal stress is big, qualification rate is low, cost is high, and circular crucible temperature inside is inhomogeneous, the edge is apart from arranging crystallizer on the equidistant circumference in the center of circle as far as possible, therefore the crystallizer limited amount that can arrange is difficult to enter industrialized production in enormous quantities.
(3) summary of the invention
At the problems referred to above; the utility model provides another crucible guided-mode structure in order to the growth shaping single crystal alumina ceramics; its inner temperature difference is less, crystallization table top temperature is more even; yield rate height during the crystallization of signle crystal alumina porcelain, thermal stresses are little, steady quality, can realize a plurality of crystallizers of crucible of multimode technology; cost is reduced significantly, can realize large-scale industrialization production.
Its technical scheme is such: it comprises crucible, described crucible is installed in the well heater by the holder handle, described well heater is installed on battery lead plate, described well heater is outside equipped with heat protection screen, be provided with crystallizer in the described crucible, the top of described crystallizer crystallization table top is provided with seed crystal, described seed crystal is coupling to interlock by syndeton and seed crystal and connects, it is characterized in that: described crucible is that cuboid or both ends are the rectangular bar shaped of circular shape, described crystallizer arranges successively that along the medullary ray of the length direction of crucible described well heater is that cuboid or both ends are the rectangular bar shaped of circular shape.
It is further characterized in that: described crystallizer comprises core rod, die sleeve respectively, and described core rod, die sleeve are installed on the crystallizer base plate respectively; Described crystallizer comprises the die sleeve of flat box body shape, and described die sleeve is installed on the crystallizer base plate, and the described die sleeve inwall of a side along its length is provided with stiffening web, and described stiffening web contacts with the inwall that offside parallels; Described heat protection screen is formed by connecting by the graphite cake assembly unit, and the graphite cake that constitutes described heat protection screen internal layer is to be coated with the graphite cake that tungsten is handled; The internal layer that constitutes described heat protection screen also can be molybdenum plate, is coated with graphite cake in the outside of described molybdenum plate; The sidewall of described crystallizer base plate and described crucible is located by connecting with molybdenum bar; Retaining plate is set in described die sleeve outside and is connected with the internal surface of described crucible; Retaining plate is set in die sleeve outside of described flat box body shape and is connected with the internal surface of described crucible.
The utility model adopts after the said structure, because well heater, crucible are that cuboid or both ends are the rectangular bar shaped of circular shape, and to be equidistant place, the rectangular bar shaped central shaft both sides temperature of circular shape equate cuboid or both ends, like this under the dual samming condition that well heater, crucible provide, yield rate height during the crystallizer crystallization, the crystal internal stress is little, and physical dimension and inner quality are stable, cost can significantly be reduced, and can realize industrialized mass production; And heat protection screen adopts full graphite or graphite and molybdenum assembly unit, and the temperature field is stable and not yielding, has further guaranteed higher crystal product rate.
(4) description of drawings
Fig. 1, Fig. 2 are the sectional view in order to two kinds of embodiment front views of the utility model of growing single-crystal alumina ceramic tube;
The partial view that Fig. 3 looks for Fig. 1 left side;
Fig. 4 is the vertical view of circular shape crucible for both ends in the utility model;
Fig. 5, Fig. 6 are the sectional view in order to two kinds of embodiment front views of the utility model of growing single-crystal alumina ceramic chip;
Fig. 7 is the enlarged view of overlooking in order to the crystallizer of growing single-crystal alumina ceramic chip.
(5) embodiment
See Fig. 1, Fig. 2, the utility model comprises crucible 8, crucible 8 is installed in the well heater 13 by holder handle 18, well heater 13 is installed on battery lead plate 12, well heater 13 is outside equipped with heat protection screen 17, heat protection screen 17 is formed by connecting by the graphite cake assembly unit, and the graphite cake of heat protection screen 17 internal layers is to be coated with the graphite cake that tungsten is handled; Heat protection screen 17 its inwalls can also be molybdenum plate, the outside of molybdenum plate is coated with graphite cake, the heat protection screen of these two kinds of structures all can guarantee the stability and the homogeneity of thermal field, the crystallizer that is provided with in the crucible 8, according to different products corresponding crystallizer is set, it among Fig. 2 crystallizer in order to the growing single-crystal alumina ceramic tube, its quantity can (have 5 according to the size setting of crucible among Fig. 2, arrange successively), its medullary ray along the length direction of crucible 8 is arranged, its structure comprises core rod 10, die sleeve 9, and core rod 10, die sleeve 9 are installed on the base plate 21 of crystallizer; The top of core rod 10, die sleeve 9 interlayers is the crystallization table top; Expressed among Fig. 5, Fig. 6 is crystallizer in order to the growing single-crystal alumina ceramic chip, its structure comprises the die sleeve of flat box body shape, die sleeve is installed on crystallizer base plate 21, the die sleeve inwall of a side (being inwall 25 among Fig. 5, Fig. 7) along its length is provided with stiffening web 28, stiffening web 28 contacts with the inwall 24 that offside parallels, and the top of die sleeve is the crystallization table top; The top of crystallization table top is provided with seed crystal 5, seed crystal 5 is connected with seed crystal shaft-linking sleeve 1 by syndeton, this syndeton comprises seed shaft 2, seed shaft 2 is connected with seed chuck 3, seed chuck 3 is connected with seed crystal 5 usefulness screws, and crucible 8 is the rectangular bar shaped (see figure 4) of circular shape for cuboid or both ends, and crucible 8 is that the plate by the groove of molybdenum matter and molybdenum matter is made of welded connection, can certainly be molded with elevated temperature heat, as long as be cuboid or rectangular bar shaped.Well heater 13 is the rectangular bar shaped (concrete shape is similar with crucible) of circular shape for cuboid or both ends.See Fig. 1, the base plate 21 of crystallizer is located by connecting with molybdenum bar 20 with the sidewall of crucible 8; It is outside and be connected with the internal surface of crucible 8 to see that Fig. 2 retaining plate 22 is set in die sleeve 9.Above-mentioned is two kinds of embodiment of the guided-mode structure of growth signle crystal alumina porcelain tube; See Fig. 5, the base plate 21 of crystallizer is located by connecting with molybdenum bar 26 with the sidewall of crucible 8; See that Fig. 6 retaining plate 27 is set in the die sleeve of flat box body shape and is connected with the internal surface of crucible 8, two kinds of embodiment of above-mentioned guided-mode structure for growth signle crystal alumina ceramics; 4 is that vision slit, 6 is graphite pillar, 19 crucible tray handles, 23 crystallizers for growth signle crystal alumina porcelain tube for protection screen group, 15 crucible supporting plates, 16 for radiation shield group, 14 for crucible cover, 11 for tungsten weldering, 7.Describe the process of growing single-crystal alumina ceramic tube below in conjunction with Fig. 1, Fig. 2: the signle crystal alumina porcelain liquid in the crucible is up along interlayer from the interlayer that the base plate of crystallizer enters between core rod 10 and the die sleeve 9, excessive from the outlet of interlayer, seed crystal 5 traction crystalline signle crystal alumina porcelain tubes are up, and interlayer outlet constantly has and overflows, continuous crystallisation, thereby grow into the signle crystal alumina porcelain tube, the process and the said process of growing single-crystal alumina ceramic chip are similar.
Claims (9)
1, guided-mode structure in order to the growth shaping single crystal alumina ceramics, it comprises crucible, described crucible is installed in the well heater by the holder handle, described well heater is installed on battery lead plate, described well heater is outside equipped with heat protection screen, be provided with crystallizer in the described crucible, the top of described crystallizer crystallization table top is provided with seed crystal, described seed crystal is coupling to interlock by syndeton and seed crystal and connects, it is characterized in that: described crucible is that cuboid or both ends are the rectangular bar shaped of circular shape, described crystallizer arranges successively that along the medullary ray of the length direction of crucible described well heater is that cuboid or both ends are the rectangular bar shaped of circular shape.
2, according to the described guided-mode structure in order to the growth shaping single crystal alumina ceramics of claim 1, it is characterized in that: described crystallizer comprises core rod, die sleeve respectively, and described core rod, die sleeve are installed on the crystallizer base plate respectively.
3, according to the described guided-mode structure of claim 1 in order to the growth shaping single crystal alumina ceramics, it is characterized in that: described crystallizer comprises the die sleeve of flat box body shape, described die sleeve is installed on the crystallizer base plate, the described die sleeve inwall of a side along its length is provided with stiffening web, and described stiffening web contacts with the inwall that offside parallels.
4, according to the described guided-mode structure in order to the growth shaping single crystal alumina ceramics of claim 1, it is characterized in that: described heat protection screen is formed by connecting by the graphite cake assembly unit, and the graphite cake that constitutes described heat protection screen internal layer is to be coated with the graphite cake that tungsten is handled.
5, according to the described guided-mode structure in order to the growth shaping single crystal alumina ceramics of claim 1, it is characterized in that: the internal layer that constitutes described heat protection screen is a molybdenum plate, is coated with graphite cake in the outside of described molybdenum plate.
6, according to claim 2 or 3 described guided-mode structures in order to the growth shaping single crystal alumina ceramics, it is characterized in that: the sidewall of described crystallizer base plate and described crucible is located by connecting with molybdenum bar.
7, according to the described guided-mode structure in order to the growth shaping single crystal alumina ceramics of claim 2, it is characterized in that: retaining plate is set in described die sleeve outside and is connected with the internal surface of described crucible.
8, according to the described guided-mode structure in order to the growth shaping single crystal alumina ceramics of claim 3, it is characterized in that: retaining plate is set in the outside of flat box body shape die sleeve and is connected with the internal surface of described crucible.
9, according to the described guided-mode structure in order to the growth shaping single crystal alumina ceramics of claim 1, it is characterized in that: described and seed crystal connection structure connecting comprises seed shaft, and described seed shaft is connected with seed chuck, and described seed chuck is connected with screw with described seed crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620075673 CN200981899Y (en) | 2006-08-25 | 2006-08-25 | Guide mould structure for growing formed single-crystal aluminum oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620075673 CN200981899Y (en) | 2006-08-25 | 2006-08-25 | Guide mould structure for growing formed single-crystal aluminum oxide |
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| Publication Number | Publication Date |
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| CN200981899Y true CN200981899Y (en) | 2007-11-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620075673 Expired - Fee Related CN200981899Y (en) | 2006-08-25 | 2006-08-25 | Guide mould structure for growing formed single-crystal aluminum oxide |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101899705A (en) * | 2010-07-23 | 2010-12-01 | 无锡金岩光电晶体科技有限公司 | Guide die structure for growing extra-thick monocrystal alumina wafer |
| CN102560630A (en) * | 2012-01-12 | 2012-07-11 | 徐州协鑫光电科技有限公司 | Thermal field capable of allowing synchronous growth of a plurality of crystals with edge-defined film-fed crystal growth technique and method thereof |
| WO2014143955A1 (en) * | 2013-03-15 | 2014-09-18 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire ribbons and apparatus and method for producing a plurality of sapphire ribbons having improved dimensional stability |
-
2006
- 2006-08-25 CN CN 200620075673 patent/CN200981899Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101899705A (en) * | 2010-07-23 | 2010-12-01 | 无锡金岩光电晶体科技有限公司 | Guide die structure for growing extra-thick monocrystal alumina wafer |
| CN102560630A (en) * | 2012-01-12 | 2012-07-11 | 徐州协鑫光电科技有限公司 | Thermal field capable of allowing synchronous growth of a plurality of crystals with edge-defined film-fed crystal growth technique and method thereof |
| WO2014143955A1 (en) * | 2013-03-15 | 2014-09-18 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire ribbons and apparatus and method for producing a plurality of sapphire ribbons having improved dimensional stability |
| US9551089B2 (en) | 2013-03-15 | 2017-01-24 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire sheets and apparatus and method for producing sapphire sheets with angled heat shields |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071128 Termination date: 20110825 |