CN209880651U

CN209880651U - Packaging structure and light-emitting device comprising same

Info

Publication number: CN209880651U
Application number: CN201821809132.9U
Authority: CN
Inventors: 陈登暐; 康桀侑; 杨皓宇; 李昱达; 陈衍锡; 刘建男
Original assignee: Everlight Electronics Co Ltd
Current assignee: Everlight Electronics Co Ltd
Priority date: 2017-11-23
Filing date: 2018-11-05
Publication date: 2019-12-31
Anticipated expiration: 2028-11-05
Also published as: TWM575921U

Abstract

The utility model provides an encapsulation structure and contain this encapsulation structure's illuminator, encapsulation structure contains: a light emitting element; the packaging structure comprises a supporting body, wherein a groove is formed in the supporting body, the light-emitting element is arranged in the groove and is electrically connected with an electrode part on the supporting body, a packaging layer is arranged in the groove and covers the light-emitting element, a quantum dot fluorescent material and a non-quantum dot fluorescent material are distributed in the packaging layer, and the quantum dot fluorescent material is distributed in one end, far away from the light-emitting element, of the packaging layer, so that the quantum dot fluorescent material is isolated from the light-emitting element.

Description

Packaging structure and light-emitting device comprising same

Technical Field

The utility model relates to a luminous field, in particular to packaging structure and contain this packaging structure's illuminator.

Background

Light Emitting Diodes (LEDs) have advantages such as long life, small size, high shock resistance, low heat generation and low power consumption, and thus have been widely used as indicators or light sources in home and various appliances. In recent years, light emitting diodes have been developed in multi-color and high brightness, and thus their application fields have been expanded to large outdoor signboards, traffic lights and related fields. In the future, the light emitting diode may even become a mainstream of the lighting source with the power saving and environmental protection functions. In order to make the led have good reliability, the led is usually subjected to a packaging process to form a durable light emitting device.

At present, when a light emitting diode is packaged, the light emitting diode is firstly mounted on a packaging support (a carrier support), and then a packaging adhesive is covered on the light emitting diode to complete the packaging of the light emitting diode, wherein, in order to improve the light emitting efficiency of the light emitting diode, a Quantum Dot phosphor material and a non-Quantum Dot phosphor material are often added in a packaging adhesive layer, specifically, as shown in fig. 10, a Quantum Dot (QD for short) phosphor material 72 and a non-Quantum Dot phosphor material 71 are irregularly distributed in a packaging layer 7.

However, when the LED is operated, the reliability of the quantum dot phosphor material 72 is easily reduced due to the high temperature or high current generated, so that the light emitting efficiency of the LED is affected, and the brightness of the LED cannot be expected.

Therefore, how to improve the above-mentioned shortcomings is a problem to be solved in the industry.

SUMMERY OF THE UTILITY MODEL

In view of the above, an object of the present invention is to provide a package structure and a light emitting device including the same, which solves the problem that the reliability of the quantum dot phosphor material in the LED package layer is affected by high temperature and current, so that the luminous efficiency of the LED is affected.

To achieve the above object, the present invention provides a package structure, which comprises:

a light emitting element;

the light-emitting element is arranged in the groove and is electrically connected with the electrode part on the bearing body; and

the packaging layer is arranged in the groove and covers the light-emitting element, a quantum dot fluorescent body material and a non-quantum dot fluorescent body material are distributed in the packaging layer, and the quantum dot fluorescent body material is distributed in one end, far away from the light-emitting element, of the packaging layer, so that the quantum dot fluorescent body material is isolated from the light-emitting element.

Preferably, the encapsulation layer includes a first encapsulation layer and a second encapsulation layer covering the first encapsulation layer, wherein the first encapsulation layer is disposed in the groove and covers the side and top surfaces of the light emitting device and the leads of the light emitting device, the non-quantum dot phosphor material is located in the first encapsulation layer, the quantum dot phosphor material is located in the second encapsulation layer, or both the quantum dot phosphor material and the non-quantum dot phosphor material are located in the second encapsulation layer.

Preferably, the encapsulation layer includes an isolation layer, an encapsulation glue layer and a protection layer, which are stacked, wherein the quantum dot phosphor material and the non-quantum dot phosphor material are both located in the encapsulation glue layer, the isolation layer is disposed in the groove and covers the light emitting element, the encapsulation glue layer covers the isolation layer, and the protection layer covers the encapsulation glue layer.

Preferably, the isolation layer is a film layer made of an anti-vulcanization material;

the protective layer is made of silicone.

Preferably, the isolation layer is made of white glue, and a top surface of the isolation layer is lower than or flush with a top surface of the light emitting element.

Preferably, the quantum dot phosphor material is isolated from the leads of the light emitting element by the encapsulation layer.

Preferably, the light emitting element includes a first light emitting chip and a second light emitting chip, wherein a wavelength band of the first light emitting chip is different from a wavelength band of the second light emitting chip.

Preferably, one of the first light emitting chip and the second light emitting chip has a wavelength band of 445 to 447.5nm, and the other has a wavelength band of 452.5 to 455 nm.

Preferably, the carrier includes:

the shell comprises a light-emitting surface, a backlight surface and a bottom surface, wherein the light-emitting surface and the backlight surface are oppositely arranged, the bottom surface is arranged between the light-emitting surface and the backlight surface, and the groove is formed in the light-emitting surface; and

the conductive bracket is partially covered by the shell and comprises a first pin and a second pin which are separated from each other, the first pin and the second pin both comprise an electrode part and a bent part, the electrode part is exposed out of the shell through the groove, and the bent part extends outwards from the electrode part to the outside of the shell and bends towards the bottom surface of the shell;

one of the first pin and the second pin further comprises a heat dissipation part, and the heat dissipation part extends outwards from the electrode part and is exposed out of the backlight surface of the shell.

Preferably, the housing further includes two side surfaces, the two side surfaces are disposed between the light emitting surface and the backlight surface, and the bottom surface is disposed between the two side surfaces; the bending part extends out of the shell through the side face and bends towards the side face and the bottom face.

Preferably, the bent portion extends outward from the heat dissipation portion, so that the bent portion indirectly extends outward from the electrode portion.

Preferably, the heat dissipation portion and the bending portion extend outward from two opposite sides of the electrode portion.

Preferably, the housing further comprises at least one supporting portion formed on the bottom surface; wherein, the thickness of the supporting part in the normal direction of the bottom surface is less than or equal to the thickness of the bending part.

Preferably, one of the first lead and the second lead further includes a first bending portion, and the first bending portion extends from the electrode portion to the outside of the housing and bends toward the bottom surface of the housing; the secondary bending part is arranged between the bending part of the first pin and the bending part of the second pin.

Preferably, a gap is formed between the first pin and the second pin, and the width of the gap is variable.

Preferably, an exposed surface of the heat dissipation part exposed on the backlight surface is flush with the backlight surface.

The utility model also provides a light-emitting device contains: a package structure as described in any of the above;

a substrate comprising a surface and a plurality of pads disposed on the surface, wherein the package structure is disposed on the surface with a bottom surface of the package structure facing the surface, the package structure being electrically connected to the pads, and,

and the heat dissipation piece is arranged on the surface and is connected with the heat dissipation part on the packaging structure.

Preferably, the substrate further includes a supporting structure formed on the surface to support the light-emitting surface of the package structure.

Preferably, the supporting structure is a receiving groove or a supporting block.

Preferably, the package structure further comprises a light guide member disposed on the surface and including a light incident side, wherein the light incident side corresponds to the groove of the package structure.

The utility model discloses an encapsulation structure and illuminator can provide following beneficial effect at least:

1. the quantum dot fluorescent material is distributed in one end, far away from the light-emitting element, of the packaging layer, so that the quantum dot fluorescent material is isolated from the light-emitting element or a lead of the light-emitting element, and the reliability of the quantum dot fluorescent material is not easily affected by high temperature generated by the light-emitting element or high current on the lead, namely the influence of the high temperature or the current on the Reliability (RA) of the quantum dot fluorescent material is reduced, and the influence of the quantum dot fluorescent material on the light-emitting efficiency of the light-emitting element is reduced or avoided.

2. The packaging glue layer of the quantum dot fluorescent material is covered by the isolating layer and the protective layer, so that when the packaging glue layer is influenced by high temperature, the isolating layer can prevent the released S element from blackening the bearing body, and meanwhile, the protective layer can prevent oxygen from contacting the quantum dot fluorescent material to generate oxidation reaction, so that the blackening of the bearing body and the oxidation reaction of the quantum dot fluorescent material are avoided.

3. The package structure is disposed on the surface of the substrate through the bending portion, such that a normal direction (i.e., a light emitting direction) of the light emitting surface of the package structure is staggered (or perpendicular) to a normal direction (i.e., a loading direction) of the surface of the substrate, and the package structure can be used for lateral light emission. In addition, the bending part of the packaging structure has a smaller tin contact surface, so the packaging structure can not be displaced due to soldering tin, and the effect of reducing the upper part error is achieved.

4. Because the radiating part of the conductive bracket is exposed outside the shell and can be connected with the external radiating part, the heat energy generated by the light-emitting element (such as a light-emitting diode) can be quickly dissipated, so that the efficiency of the light-emitting element is reduced or avoided from being weakened due to high temperature. Therefore, even if the tin contact surface is reduced, the package structure can effectively remove heat energy.

5. Because the bending part has better structural strength after being bent twice, when an external force acts on the packaging structure arranged on the substrate, the bending part is not easy to break or deform. In addition, the secondary bending part can bear the stress of the bending part, so that the bending part is less prone to fracture or deformation.

In order to make the aforementioned objects, features and advantages more comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive labor.

Fig. 1A is a schematic cross-sectional view of a light emitting device and a package layer in a package structure according to an embodiment of the present invention;

fig. 1B is a schematic cross-sectional view of a light emitting device and a package layer in a package structure according to an embodiment of the invention;

fig. 2A is a schematic cross-sectional view of a light emitting element and a package layer in a package structure according to a second embodiment of the present invention;

fig. 2B is a schematic cross-sectional view of a light emitting element and an encapsulation layer in a package structure according to a second embodiment of the present invention;

fig. 3A is a schematic perspective view of a carrier in the package structure according to the present invention;

fig. 3B is a schematic structural view of a backlight surface of a carrier in the package structure according to the present invention;

fig. 3C is a schematic perspective view of a backlight surface of a carrier in the package structure according to the present invention;

fig. 4A is a schematic structural view of a conductive bracket in a carrier of a package structure according to the present invention;

fig. 4B is a schematic cross-sectional view of a conductive support in a carrier of a package structure according to the present invention;

fig. 5A is a schematic structural view of the conductive support and the housing in the manufacturing process of the package structure provided by the present invention;

fig. 5B is a schematic cross-sectional view of the conductive support and the housing during the manufacturing process of the package structure provided by the present invention;

fig. 6A is a schematic structural view of the conductive bracket and the housing when the package structure provided by the present invention is manufactured;

fig. 6B is a schematic cross-sectional view of the conductive bracket and the housing when the package structure provided by the present invention is manufactured;

fig. 6C is a schematic side view of the conductive bracket and the housing when the package structure provided by the present invention is manufactured;

fig. 7 is a schematic structural diagram of a light emitting device according to a third embodiment of the present invention;

fig. 8A-8B are schematic structural diagrams illustrating a light-emitting device according to a third embodiment of the present invention, wherein a substrate has a supporting mechanism;

fig. 9 is a schematic view of a light emitting device according to the present invention when mixed crystals are used as light emitting elements;

fig. 10 is a schematic cross-sectional view of a light emitting device and a package layer in a conventional package structure.

The attached drawings indicate the following:

1-a carrier; 10-a housing; 11-a light-emitting surface; 12-a backlight surface; 13-a bottom surface; 14-a groove; 15-side; 16-a support portion; 20-a conductive support; 21-a first pin; 22-a second pin; 23-an electrode section; 24-a bending part; 25-a heat-dissipating portion; 251-an exposed surface; 26-secondary bending part; 27-gap; 2-a light emitting device; 3-a substrate; 31-a surface; 32-pads; 33-a support structure; 331-a receiving groove; 332-a support block; 4-a heat sink; 5-a light guide; 51-light incident side; 6-a light emitting element; 61-a lead; 7-an encapsulation layer; 71-non-quantum dot phosphor material; 72-quantum dot phosphor material; 701-a first encapsulation layer; 702-a second encapsulation layer; 703-an isolating layer; 704-packaging adhesive layer; 705-protective layer; 200-metal plate.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

Example one

Fig. 1A is a schematic cross-sectional structure diagram of a light emitting element and an encapsulation layer in a package structure according to an embodiment of the present invention, and fig. 1B is a schematic cross-sectional structure diagram of a light emitting element and an encapsulation layer in a package structure according to an embodiment of the present invention.

The package structure provided by the embodiment includes: the light-emitting device comprises a light-emitting element 6, a carrier 1 and a packaging layer 7, wherein the carrier 1 is provided with a groove 14, the light-emitting element 6 is arranged in the groove 14 and is electrically connected with an electrode part on the carrier 1, the packaging layer 7 is arranged in the groove 14 and covers the light-emitting element 6, and quantum dot fluorescent material 72 and non-quantum dot fluorescent material 71 are distributed in the packaging layer 7.

In the present embodiment, in order to prevent the influence of high temperature or high current on the reliability of the quantum dot phosphor material 72, specifically, as shown in fig. 1A, a quantum dot phosphor material 72 is distributed in an end of the encapsulation layer 7 remote from the light emitting element 6, that is, the quantum dot phosphor material 72 is far away from the light emitting element 6 and the lead 61 of the light emitting element, so that the distance between the quantum dot phosphor material 72 and the light emitting element 6 is increased, the quantum dot phosphor material 72 is isolated from the light emitting element 6, in the present embodiment, the quantum dot phosphor material 72 is isolated from the lead 61 of the light emitting element 6 by the encapsulating layer 7, the high temperature generated by the light emitting element 6 or the high current on the lead wires of the light emitting element 6 thus hardly affects the reliability of the quantum dot phosphor material 72, i.e., the effect of high temperature or current magnitude on the Reliability (RA) of the quantum dot phosphor material 72 is reduced.

In the present embodiment, when the quantum dot phosphor material 72 is distributed in the end of the encapsulation layer 7 away from the light emitting element 6, specifically, the quantum dot phosphor material 72 may be distributed in the end of the encapsulation layer 7 away from the light emitting element 6 by an inverted centrifugal process, wherein the non-quantum dot phosphor material 71 may also be distributed in the end of the encapsulation layer 7 away from the light emitting element 6 as shown in fig. 1A, or the non-quantum dot phosphor material 71 may be distributed in the end of the encapsulation layer 7 close to the light emitting element 6 as shown in fig. 1B.

In this embodiment, the quantum dot phosphor material 72 may be SiO₂And SiO₂Preferably 2nm, the non-quantum dot phosphor material 71 may be a fluoride phosphor (KSF), and SiO₂And KSF are distributed in the encapsulation layer 7, the encapsulation layer 7 filling the both grooves 1414.

In this embodiment, for comparison, the package structures shown in fig. 10, fig. 1A and fig. 1B are subjected to a temperature-changing humidity-changing test, and the test results are shown in table 1 (where sample 1 is the package structure corresponding to fig. 10, sample 2 is the package structure corresponding to fig. 1B, and sample 3 is the package structure corresponding to fig. 1A):

TABLE 1

Wherein Δ LM in the table is a Lumen (Lumen) variation value of the light emitting element 6, as can be seen from the table, compared with samples 1 and 2, in the present embodiment, after the encapsulation layer 7 is subjected to the inversion centrifugation process, Δ LMs of the light emitting element 6 (i.e., sample 3) in 0-72h are all smaller, that is, in the light emitting element 6 provided in the present embodiment, when the quantum dot phosphor material 72 and the non-quantum dot phosphor material 71 are distributed in one end of the encapsulation layer 7 far away from the light emitting element 6 through the inversion centrifugation process, light attenuation of the light emitting device in 0-72h is smaller, and therefore, in the light emitting element 6 provided in the present embodiment, when the quantum dot phosphor material 72 and the non-quantum dot phosphor material 71 are distributed in one end of the encapsulation layer 7 far away from the light emitting element 6 through the inversion centrifugation process, Reliability (RA) of the light emitting element 6 is greatly improved.

Therefore, in the package structure provided by this embodiment, the quantum dot phosphor material 72 is distributed in the end of the package layer 7 away from the light emitting element 6, so that the distance between the quantum dot phosphor material 72 and the light emitting element 6 is increased, thereby achieving the purpose of isolating the quantum dot phosphor material 72 from the light emitting element 6, so that the reliability of the quantum dot phosphor material 72 is not easily affected by the high temperature generated by the light emitting element 6 or the high current on the lead, that is, the influence of the high temperature or the current on the Reliability (RA) of the quantum dot phosphor material 72 is reduced, thereby reducing or avoiding the influence of the quantum dot phosphor material 72 on the light emitting efficiency of the light emitting element 6.

Further, in the present embodiment, as shown in fig. 1B, the encapsulation layer 7 includes a first encapsulation layer 701 and a second encapsulation layer 702 covering the first encapsulation layer 701, i.e., the encapsulation layer 7 is a double-layer structure in which the first encapsulation layer 701 covers the groove bottom of the groove 14, the side and top surfaces of the light emitting element 6, and the lead 61, the non-quantum-dot phosphor material 71 is located in the first encapsulation layer 701, the quantum-dot phosphor material 72 is located in the second encapsulation layer 702 (as shown in fig. 1B), alternatively, both the quantum dot phosphor material 72 and the non-quantum dot phosphor material 71 are located in the second encapsulation layer 702 (as shown in FIG. 1A), the quantum dot phosphor material 72 thus in the second encapsulation layer 702 is isolated by the first encapsulation layer 701 from the light emitting element 6 with the highest temperature and the leads 61 of the light emitting element 6, thereby reducing or avoiding the effects of high temperatures and high currents on the reliability of the quantum dot phosphor material 72.

Example two

In the package structure provided in this embodiment, the package layer 7 is a sandwich structure, specifically, the package layer 7 includes an isolation layer 703, a package adhesive layer 704 and a protection layer 705, which are stacked, wherein the quantum dot phosphor material 72 and the non-quantum dot phosphor material 71 are both located in the package adhesive layer 704, the isolation layer 703 at least covers the groove bottom of the groove 14 and the side surface of the light emitting element 6, the package adhesive layer 704 at least covers the first package layer 701, and the protection layer 705 covers the package adhesive layer 704, wherein in this embodiment, as shown in fig. 2A, the isolation layer 703 covers the groove bottom of the groove 14, the side surface and the top surface of the light emitting element 6 and the lead 61 of the light emitting element 6, and the package adhesive layer 704 covers the isolation layer, in this embodiment, when the reliability of the quantum dot phosphor material 72 is affected by high temperature or current, because the quantum dot phosphor material 72 contains S element, the S element is released after being affected by high temperature, which causes blackening of the carrier 1, and the quantum dot phosphor material 72 is easily reacted with oxygen when being excited by light, which causes a decrease in efficiency of the quantum dot phosphor material 72, for this reason, in this embodiment, in order to prevent the released S element from causing blackening of the carrier 1 and an oxidation reaction of the quantum dot phosphor material 72, specifically, the encapsulant layer 704 where the quantum dot phosphor material 72 is located is covered by the isolation layer 703 and the protection layer 705, so that the isolation layer 703 can prevent the released S element from causing blackening of the carrier 1 when being affected by high temperature, and at the same time, the protection layer 705 can prevent oxygen from contacting the quantum dot phosphor material 72 to cause an oxidation reaction, which avoids blackening of the carrier 1 and an oxidation reaction of the quantum dot phosphor material 72.

In this embodiment, the isolation layer 703 is specifically a film made of an anti-vulcanization material (S-barrier) or white glue, wherein in this embodiment, the anti-vulcanization material is specifically silicone, and the silicone may specifically be a chemical produced by shin-over corporation and having a model number of ASP-2031.

In this embodiment, when the isolation layer 703 is a film made of an anti-vulcanization material, the isolation layer 703 may prevent the released S element from diffusing onto the carrier 1, and when the isolation layer 703 is made of white glue, the white glue may affect the light emission of the light emitting element 6, so as shown in fig. 2B, the top surface of the isolation layer 703 is lower than or flush with the top surface of the light emitting element 6, that is, the isolation layer 703 cannot exceed the top surface of the light emitting element 6, and the thickness of the isolation layer 703 is lower than the light emitting element 6, wherein in this embodiment, when the isolation layer 703 is made of white glue, the white glue may shield the silver plating layer at the bottom of the groove 14, and prevent the silver plating layer from being blackened by sulfur, wherein in this embodiment, when the isolation layer 703 is made of silicone, since the silicone has a higher hardness.

In this embodiment, since the silicone resin has a high refractive index, high stability and a gas barrier effect, the protective layer 705 is a film made of silicone resin, so as to prevent oxygen from contacting the quantum dot phosphor material 72 and causing oxidation, wherein the protective layer 705 may also be made of silicone resin of ASP-2031.

Further, on the basis of the above embodiment, in the present embodiment, the light emitting element 6 includes a first light emitting chip and a second light emitting chip (not shown), wherein the wavelength band of the first light emitting chip is different from the wavelength band of the second light emitting chip, that is, in the present embodiment, the light emitting element 6 uses two different wavelength bands of wafer light mixing, wherein in the present embodiment, specifically, one of the first light emitting chip and the second light emitting chip has a wavelength band of 445 to 447.5nm, and the other has a wavelength band of 452.5 to 455nm, as shown in fig. 9, after using two different wavelength bands and 10nm of span wafer light mixing, a wavelength band falling within 2nm of span can be obtained, that is, the span of the wavelength band is reduced, the width of the wavelength band is narrowed, so that the color saturation can be prevented from being reduced.

In this embodiment, the package structure corresponding to fig. 10, fig. 1A and 1B, and fig. 2A-2B is tested, and the test structure is shown in fig. 2:

as can be seen from table 2, when the two-layer structure and the sandwich structure are adopted for the encapsulating layer 7, the lumen variation value of the light emitting element 6 is lower than-33.69%, that is, when the two-layer structure and the sandwich structure are adopted for the encapsulating layer 7, the improvement of the reliability of the light emitting element 6 is facilitated.

TABLE 2

	Material	Lm 0hrs	Lm 168hrs	ΔLm％
					Sample 1 (FIG. 10)	QD&KSF	27.58	18.29	-33.69％
Sample 2 (FIG. 1B)	Double layer structure (QD + KSF)	22.44	17.52	-21.93％
					Sample 3 (FIG. 2A)	Three-layer structure (S-barrier + ASP)	15.95	11.62	-27.16％
Sample 4 (FIG. 2B)	Three-layer structure (white glue + ASP)	16.73	12.87	-23.06％
					Sample 5 (FIG. 2A)	Three-layer structure (ASP + ASP)	14.80	10.55	-28.70％

FIG. 3A is a schematic perspective view of a carrier in a package structure, FIG. 3B is a schematic structural view of a backlight surface of a carrier in a package structure, FIG. 3C is a schematic perspective view of a backlight surface of a carrier in a package structure, FIG. 4A is a schematic structural view of a conductive frame in a carrier in a package structure, FIG. 4B is a schematic sectional view of a conductive frame in a carrier in a package structure, FIG. 5A is a schematic structural view of a conductive frame and a housing in a manufacturing process of a package structure, FIG. 5B is a schematic sectional view of a conductive frame and a housing in a manufacturing process of a package structure, FIG. 6A is a schematic structural view of a conductive frame and a housing when the package structure is manufactured, fig. 6B is the utility model provides a conductive support and casing's profile schematic diagram when packaging structure preparation is accomplished, fig. 6C is the utility model provides a conductive support and casing's side schematic diagram when packaging structure preparation is accomplished.

Further, in the present embodiment, on the basis of the above-described embodiments, as shown in fig. 3A to 6C,

the carrier 1 includes a housing 10 and a conductive support 20, and the technical content of each component is described below.

The case 10 may be formed of a general packaging material such as a material exhibiting light-proof or light-shielding properties, for example, a thermosetting resin, a thermal plasticizing resin, PPA, PCT, and a polymer resin, wherein a reflective material and a heat-dissipating material such as TiO may be added to the resin₂Or is SiO₂The housing 10 is substantially a cube, and includes a light-emitting surface 11, a backlight surface 12, a bottom surface 13 and two side surfaces 15; the light emitting surface 11 represents a surface from which light of the light emitting element 6 (shown in fig. 5A) is emitted, and a normal direction of the light emitting surface 11 can be defined as a light emitting direction of the light emitting element 6; the light-emitting surface 11 is disposed opposite to the backlight surface 12, so that the normal direction of the backlight surface 12 is away from the light-emitting direction, and light should not be emitted from the backlight surface 12. Preferably, the light emitting surface 11 and the backlight surface 12 may be a plane and parallel to each other.

The bottom surface 13 and the two side surfaces 15 are connected to the light-emitting surface 11 and the backlight surface 12, and are disposed between the light-emitting surface 11 and the backlight surface 12, and the bottom surface 13 is further disposed between the two side surfaces 15. In other words, the side surface 15, the bottom surface 13 and the other side surface 15 are sequentially formed along the edge of the light-emitting surface 11 and the edge of the backlight surface 12 and are sandwiched between the light-emitting surface 11 and the backlight surface 12. Preferably, the bottom surface 13 and the side surfaces 15 are perpendicular to the light emitting surface 11 and the backlight surface 12, and the bottom surface 13 and the two side surfaces 15 may be non-planar and have some step differences or chamfers.

The groove 14 is concavely formed on the light emitting surface 11, and the bottom of the groove 14 has an opening to expose an electrode portion 23 of the conductive support 20. Preferably, the side surface of the groove 14 is inclined with respect to the light emitting surface 11, so that more light can be emitted from the light emitting surface 11, i.e. the light extraction efficiency is increased. The groove 14 can be filled with resin, wherein the resin can be added with phosphor to change the wavelength (color) of light. The housing 10 further preferably includes at least one supporting portion 16, for example, two supporting portions 16 may be provided, the two supporting portions 16 are formed on the bottom surface 13 in a protruding manner, and the bottom surface of the supporting portion is preferably flush with the bottom surface of the bending portion, so as to assist the bending formation of the bending portion 24 or the secondary bending portion 26, which will be described later, and also increase the structural stability of the carrier 1 and the substrate 3 (as shown in fig. 5A) (because the supporting portions 16 may contact the surface 31 of the substrate 3). Preferably, the total area of the bottom surface of the supporting portion 16 is smaller than that of the bottom surface of the secondary bending portion 26, so as to increase the heat dissipation area of the leads, and also to assist the stability of the combination of the package structure and the substrate. In addition, the surface area of the light emitting surface 11 is larger than the surface area of the opening of the groove 14, and the groove 14 is disposed adjacent to a top surface of the housing (i.e., a surface opposite to the bottom surface 13 of the housing), so as to effectively seal with the light guide 5 and avoid light leakage.

The conductive support 20 can be formed by stamping, punching or bending a metal plate (such as a pure metal, an alloy, a metal composite laminate, etc.); as shown in fig. 2A to 2B, the conductive bracket 20 has not been separated from the metal plate 200. The conductive frame 20 is partially covered by the housing 10 and is sandwiched by the housing 10, and the conductive frame 20 includes a first lead 21 and a second lead 22 that are separated from each other, so that a gap 27 is formed between the first lead 21 and the second lead 22 (i.e. between the two opposite tangent planes). Alternatively, the gap 27 is a depletion region formed after a specific portion of the metal sheet 200 is punched and removed by a cutter. Preferably, the width of the gap 27 is varied, that is, the gap 27 may be designed to include a first gap and a second gap, and the first gap and the second gap may be connected to each other, and the first gap may be disposed and exposed at the bottom of the groove, and the second gap may be disposed in the housing and covered by the resin material of the housing; the first gap has a first width, and the second gap has a second width larger than the first width, so that the first and second leads can be stably fixed at the part adjacent to the first gap due to the small width of the first gap, and the first and second leads are suitable for being used as areas for chip fixing and wire bonding. On the other hand, the width of the second gap is larger, so that more resin materials can be filled in the second gap, and the vibration caused by die bonding and wire bonding can be absorbed in the manufacturing process; thus, the thickness of the tool is correspondingly changed (or a plurality of tools with different thicknesses but short length), and compared with a single tool with uniform thickness and thin and long shape, the tool with variable thickness (or a non-elongated tool) can have better structural strength, and the service life of the tool is prolonged.

Referring to fig. 4A to 4B, the first lead 21 and the second lead 22 each include an electrode portion 23 and a bending portion 24. The electrode portion 23 is far away from the bottom surface 13 of the housing 10 and is exposed from the housing 10 through the groove 14, so that the light emitting element 6 can be electrically connected to the electrode portion 23 when disposed in the groove 14. The electrode portion 23 of the first lead 21 may be larger in area than the electrode portion 23 of the second lead 22 to facilitate formation of a heat dissipation portion 25 to be described later. Further, the gaps 27 between the electrode portions 23 may have a small width. The bending portion 24 extends outward from the electrode portion 23 and is integrally formed with the electrode portion 23. In addition, the outer side surface of the bending portion 24 is flush with the outer side surface 15 of the housing 10, so that the possibility of short circuit caused by the reduction of the diffusion area of the bonding pad 32 (as shown in fig. 7) can be avoided. The outer surface area of the bending portion 24 may be larger than the bottom surface area, so that the excessive solder existing between the bottom surface of the bending portion and the substrate 3 may be reduced, and the package structure may not be flatly attached to the substrate 3.

Referring to fig. 5A to 5B, in the manufacturing process, after the housing 10 is partially wrapped by the conductive support 20, the bent portion 24 may extend from the side surface 15 of the housing 10. Referring to fig. 6A to 6C, the bending portion 24 is primarily bent toward the side surface 15 of the housing 10, and then the primarily bent bending portion 24 is bent toward the bottom surface 13 of the housing 10 by the supporting portion 16 formed on the housing 10. That is, the bending portion 24 is bent twice in different directions to increase the structural strength thereof; however, the bent portion 24 may extend out of the housing 10 directly from the bottom surface 13 and then be bent directly toward the bottom surface 13. The bent portion 24 is spaced apart from (not contacting) the bottom 13 and/or the side 15 of the housing 10, but can also abut against and contact the bottom 13 and/or the side 15.

The bending portion 24 is used for connecting with a pad 32 (as shown in fig. 7) of the substrate 3, and has a smaller tin contact surface (the width of the tin contact surface is not greater than the width of the bottom surface 13), so that less solder is attached to the bending portion 24, and the excess solder can extend into the gap between the bottom surface 13 and the bending portion 24 to form a buffer, thereby preventing the package structure from being flatly attached to the substrate 3.

Preferably, in the present embodiment, one of the first lead 21 and the second lead 22 further includes a first bending portion 26, taking the first lead 22 as an example, the first bending portion 26 extends from the electrode portion 23 to the outside of the bottom surface 13 of the housing 10 (as shown in fig. 5A), and the second bending portion 26 can be bent toward the bottom surface 13 of the housing 10 by leaning on the supporting portion 16 (as shown in fig. 6A), so that the second bending portion 26 is located between the second bending portions 24 (i.e., between the second supporting portions 16) and located outside of the bottom surface 13 of the housing 10, and in addition, the bending direction of the second bending portion 26 can be perpendicular to the bending direction of the second bending portion 24, so that the bottom surface of the second bending portion 26 can be flush with the bottom surface of the supporting portion. The secondary bending portion 26 is also used for connecting to a pad 32 (as shown in fig. 7) of the substrate 3, so as to increase the connection area and the heat dissipation area between the first lead 21 and the pad 32, and further increase the bonding strength between the carrier 1 and the substrate 3. Alternatively, the secondary bending portion 26 may be selectively abutted or contacted with the bottom surface 13 and/or the side surface 15. Similarly, the width of the secondary bend will be less than the width of the bottom surface 13, and thus can also serve as a buffer for excess solder.

In addition, the thickness of the supporting portion 16 in the normal direction of the bottom surface 13 along the normal direction of the bottom surface 13 should be not greater than (i.e. less than or equal to) the thickness of the bending portion 14 and the sub-bending portion 26, so that the supporting portion 16 does not protrude from the bending portion 14 and the sub-bending portion 26, and the connection between the bending portion 14 and the sub-bending portion 26 and the substrate 3 is not affected.

Referring to fig. 5A and 6B, in the present embodiment, one of the first leads 21 and the second leads 22 further includes a heat dissipation portion 25, taking the first lead 22 as an example, the heat dissipation portion 25 also extends outward from the electrode portion 23, and then the bending portion 24 (the secondary bending portion 26) extends outward from the heat dissipation portion 25 toward the housing 10, the extending direction of the bending portion is opposite to the opening direction of the groove, the heat dissipation portion 25 can be designed as a concave portion, and in order to increase the heat dissipation efficiency and reduce the thermal resistance, the depth of the concave portion of the heat dissipation portion is smaller than the depth of the groove; in other words, the heat dissipating portion 25 is provided between the electrode portion 23 and the bent portion 24, and the bent portion 24 indirectly extends outward from the heat dissipating portion 25. Further, since the heat dissipation portion 25 is also exposed to the backlight surface 12 of the case 10 with respect to the electrode portion 23, the exposed surface 251 of the heat dissipation portion 25 is not covered by the case 10.

More specifically, the exposed surface 251 of the heat dissipation portion 25 may be flush with (or protrude from) the backlight surface 12, such that the exposed surface 251 may be connected to a heat dissipation member (e.g., a heat conduction block, a fin, a fan, or the like), so that the light emitting device 6 is usually disposed on the pins of the heat dissipation portion 25, and the heat emitted by the light emitting device 6 can be rapidly dissipated through the exposed surface 251 of the heat dissipation portion, such that the arrangement of the pins of the light emitting device 6 has a lower thermal resistance than the other pins. In addition, as mentioned above, the lead further includes at least two bending portions extending to the outer side surface or the bottom surface of the housing, so that heat dissipation can be increased and thermal resistance can be reduced.

It should be noted that, in other embodiments, the heat dissipation portion 25 and the sub-bent portion 26 may also be included in the second pin 22, or both the first pin 21 and the second pin 22 include the respective heat dissipation portion 25 and/or the sub-bent portion 26. In addition, the electrode portion 23 may be disposed between the heat dissipation portion 25 and the bending portion 24, so that the heat dissipation portion 25 and the bending portion 24 extend outward from two opposite sides of the electrode portion 23; at this time, the electrode portion 23 and the groove 14 are closer to the bottom surface 13 of the case 10, and the heat dissipation portion 25 is relatively distant from the bottom surface 13.

EXAMPLE III

Fig. 7 is a schematic structural diagram of a light emitting device according to a third embodiment of the present invention, and fig. 8A-8B are schematic structural diagrams of a light emitting device according to a third embodiment of the present invention when a substrate has a supporting mechanism.

The above embodiments are descriptions of technical contents of the package structure, and then, application examples of the carrier package structure are described, that is, the light emitting device 2 according to the preferred embodiment of the present invention is provided. In which, the detailed technical contents related to the package structure should be mutually referred to, so the description of the same parts will be omitted or simplified.

Referring to fig. 7, the light emitting device 2 includes at least one package structure as described above, and further includes a substrate 3, a heat sink 4 and a light guide 5. The technical content of each component is further explained as follows.

The substrate 3 (e.g., a circuit board) includes a surface 31 and a plurality of pads 32 disposed on the surface 31. The carrier 1 is disposed on the surface 31, the bottom surface 13 of the housing 10 faces the surface 31, and the bending portion 24 (the secondary bending portion 26) on the bottom surface 13 is soldered to the pads 32, so that the bending portions 24 of the first leads 21 and the second leads 22 are electrically connected to the pads 32 respectively; solder (solder paste, not shown) is applied between the bending portion 24 and the pad 32. In addition, the normal direction of the light emitting surface 11 of the housing 10 is staggered and perpendicular to the normal direction of the surface 31.

In order to enhance the connection strength between the carrier 1 and the substrate 3, the substrate 3 further includes a supporting structure 33 formed on the surface 31 to support the light-emitting surface 11 of the carrier 1. Specifically, the supporting structure 33 may be the accommodating groove 331 (as shown in fig. 8A), or the supporting structure 33 may also be in the form of a supporting block 332 (as shown in fig. 8B) to provide a supporting force to the light-emitting surface 11.

In addition, the light emitting element 6 is disposed in the recess 14 (as shown in fig. 3B) of the housing 10, and is electrically connected to the electrode portion 23 of the first lead 21 and the electrode portion 23 of the second lead 22 (as shown in fig. 3B) through the recess 14, so that the light emitting element 6 can sequentially form a conductive path with the outside through the electrode portion 23 of the conductive support 20, the bending portion 24, and the pad 32 of the substrate 3.

The heat sink 4 is disposed on the surface 31 of the substrate 3 and connected to the heat sink 25 of the conductive bracket 20. Preferably, the exposed surface 251 of the heat dissipation part 25 contacting the heat dissipation member 4 is coated with a heat dissipation paste, so that the contacting surface has a better thermal conductivity, thereby improving the heat dissipation efficiency.

It should be noted that, in the specific embodiment, the single heat dissipation element 4 corresponds to the single carrier 1 and is connected to the heat dissipation portion 25 thereof to perform the heat dissipation mechanism thereof; in other embodiments, a single heat sink 4 may also correspond to multiple carriers 1 at the same time, and be thermally connected to the heat dissipation portions 25 of the carriers 1, respectively.

The light guide 5 is also disposed on the surface 31 of the substrate 3 and includes a light incident side 51, the light incident side 51 is located at a position corresponding to the groove 14 of the housing 10 containing the light emitting device 6 and is not smaller than the groove 14 in size, so that the light emitted from the light emitting device 6 enters the light guide 5 from the light incident side 51 as much as possible. The light can be transmitted in the light guide 5 and uniformly emitted from the light emitting side of the light guide 5 to components (not shown) such as a display panel. The light guide 5 can also correspond to a plurality of carriers 1 at the same time, and the light incident side 51 is aligned with the grooves of the carriers 1.

It is above-mentioned to synthesize, the utility model provides an encapsulation structure and illuminator can make encapsulation structure and base plate combine together firmly, and effectively reduce encapsulation structure's last piece error, and then increase the alignment accuracy between light emitting component and the leaded light spare, improve in these settings through the radiating part simultaneously, because of the encapsulation structure reduces the radiating effect that receives the influence with the base plate contact surface, with the luminous efficacy who maintains light emitting component, quantum dot fluorophor material among the encapsulation structure is kept apart with the highest light emitting component of temperature or lead wire simultaneously, thereby quantum dot fluorophor material's reliability has been ensured, and then illuminator's reliability has been guaranteed.

The light emitting element 6 used in the present invention can emit a wavelength of 400nm to 530nm basically, and its manufacturing method is as follows. First, a multi-material layer structure is formed on a substrate, such as an N-type layer, a light-emitting layer, a P-type layer, and a current diffusion layer, by Metal Organic Chemical Vapor Deposition (MOCVD) or similar deposition techniques. The N-type layer, the light emitting layer, and the P-type layer may be GaN, AlGaN, InGaN, AlInGaN, or similar compounds composed of any of Al, In, Ga, and N, and may be grown on the substrate by an mocvd or mbe process. The current diffusion layer 18 is made of a metal with a low resistance (such as nickel, gold or their alloys) or a transparent conductive oxide material. Generally, the metal composite structure suitable for the current diffusion layer may include metals such as Ti, Al, Pt, Ni, Au, Pd, Co, Cr, Sn, Nd, or Hf, and the transparent conductive oxide material may include indium tin oxide, cadmium tin oxide, ZnO: al, ZnGa₂O₄、SnO₂：Sb、Ga₂O₃：Sn、AgInO₂：Sn、In₂O₃：Zn、NiO、MnO、 FeO、Fe₂O₃、CoO、CrO、Cr₂O₃、CrO₂、CuO、SnO、GaO、RuO₂、Ag₂O、 CuAlO₂、SrCu₂O₂、LaMnO₃PdO, etc.

In this embodiment, the non-quantum dot phosphor material 71 may be selected from one or more of the following groups: (Sr, Ba) Si₂(O,Cl)₂N₂:Eu²⁺、Sr₅(PO4)₃Cl:Eu²⁺、 (Sr,Ba)MgAl₁₀O₁₇:Eu²⁺、(Sr,Ba)₃MgSi₂O₈:Eu²⁺、SrAl₂O₄:Eu²⁺、SrBaSiO₄:Eu²⁺、 CdS:In、CaS:Ce³⁺、(Y,Lu,Gd)₃(Al,Ga)₅O₁₂:Ce³ ⁺、Ca₃Sc₂Si₃O₁₂:Ce³⁺、SrSiON:Eu²⁺、 ZnS:Al³⁺,Cu⁺、CaS:Sn²⁺、CaS:Sn²⁺,F、CaSO₄:Ce³⁺,Mn²⁺、LiAlO₂:Mn²⁺、 BaMgAl₁₀O₁₇:Eu²⁺,Mn²⁺、ZnS:Cu⁺,Cl-、Ca₃WO₆:U、Ca₃SiO₄Cl₂:Eu²⁺、 Sr_xBa_yClzAl₂O_4-z/2:Ce³⁺,Mn²⁺(X:0.2、Y:0.7、Z:1.1)、Ba₂MgSi₂O₇:Eu²⁺、 Ba₂SiO₄:Eu²⁺、Ba₂Li₂Si₂O₇:Eu²⁺、ZnO:S、ZnO:Zn、Ca₂Ba₃(PO₄)₃Cl:Eu²⁺、 BaAl₂O₄:Eu²⁺、SrGa₂S₄:Eu²⁺、ZnS:Eu² ⁺、Ba₅(PO₄)₃Cl:U、Sr₃WO₆:U、 CaGa₂S₄:Eu²⁺、SrSO₄:Eu²⁺,Mn²⁺、ZnS:P、ZnS:P^3-,Cl^-、ZnS:Mn²⁺、CaS:Yb²⁺,Cl、 Gd₃Ga₄O₁₂:Cr³⁺、CaGa₂S₄:Mn²⁺、Na(Mg,Mn)₂LiSi₄O₁₀F₂:Mn、ZnS:Sn²⁺、 Y₃Al₅O₁₂:Cr³⁺、SrB₈O₁₃:Sm²⁺、MgSr₃Si₂O₈:Eu²⁺,Mn²⁺、α-SrO₃B₂O₃:Sm²⁺、ZnS-CdS、ZnSe:Cu⁺,Cl、ZnGa₂S₄:Mn²⁺、ZnO:Bi³⁺、BaS:Au,K、 ZnS:Pb²⁺、ZnS:Sn²⁺,Li⁺、ZnS:Pb,Cu、CaTiO³:Pr³⁺、CaTiO₃:Eu³⁺、Y₂O₃:Eu³⁺、 (Y,Gd)₂O₃:Eu³⁺、CaS:Pb²⁺,Mn²⁺、YPO₄:Eu³⁺、Ca₂MgSi₂O₇:Eu²⁺,Mn²⁺、 Y(P,V)O₄:Eu³ ⁺、Y₂O₂S:Eu³⁺、SrAl₄O₇:Eu³⁺、CaYAlO₄:Eu³⁺、LaO₂S:Eu³⁺、 LiW₂O₈:Eu³⁺,Sm³⁺、(Sr,Ca,Ba,Mg)₁₀(PO₄)₆Cl₂:Eu²⁺,Mn²⁺、 Ba₃MgSi₂O₈:Eu²⁺,Mn²⁺、ZnS:Mn²⁺,Te²⁺、Mg₂TiO₄:Mn⁴⁺、K₂SiF₆:Mn⁴⁺、SrS:Eu²⁺、 Na_1.23K_0.42Eu_0.12TiSi₄O₁₁、Na_1.23K_0.42Eu_0.12TiSi₅O₁₃:Eu³⁺、CdS:In,Te、 (Sr,Ca)AlSiN₃:Eu²⁺、CaSiN₃:Eu²⁺、(Ca,Sr)₂Si₅N₈:Eu²⁺And Eu₂W₂O₇。

In addition, the utility model discloses a support design, moreSuitable for fabrication using a high color rendering white LED, for example, the light emitting device comprises at least one oxynitride phosphor doped with Mn2+ activator, wherein the encapsulating layer covers the light emitting chip (i.e., the light emitting element 6), and the oxynitride phosphor is distributed in the encapsulating layer. The first light emitted by the light emitting chip excites the oxynitride fluorescent body to emit a second light, wherein the first light can be an emission spectrum with a wavelength of 420-490nm, and the half-wave peak width of the second light is more than 35nm and less than 50nm, and can emit an emission spectrum with a wavelength of 518nm to 528nm, preferably 520 nm. The oxynitride phosphor may be a green phosphor composed of Mn²⁺The activated gamma-Alon oxynitride phosphor has a chemical structural formula of M_aA_bAl_cO_dN_e(M is Mn, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Tm, Yb at least contains more than 1 element of Mn, A is more than 1 metal element except M, Al, and a + b + c + d + e is 1 in the structural formula). As Mn²⁺Activated gamma-Alon oxynitride phosphors.

In order to achieve a desired white spectrum, the light-emitting device of the present invention may be selected from a red phosphor and a γ -Alon oxynitride phosphor. In order to achieve a wide NTSC color gamut, Mn is preferably used⁴⁺A fluoride phosphor as an activator. The structural formula of the phosphor can be: MI₂(MII_1-hMn_h)F₆. In the above structural formula, M is at least 1 alkali metal element selected from Li, Na, K, Rb and Cs. MII is at least 1 4-valent metal element selected from Ge, Si, Sn, Ti and Zr. Furthermore, 0.001. ltoreq. h.ltoreq.0.1 is preferred. In order to reduce deterioration of the fluoride phosphor due to light and heat, MI is preferably K, MII is preferably Ti or Si, and Mn⁴⁺The concentration of (c) is between 0.001 and 0.1. The average particle diameter of the phosphor particles can be selected to be 18 μm to 41 μm. The red fluoride phosphor to be used in the present invention includes the following: k₂SiF₆:Mn⁴⁺、K₂TiF₆:Mn⁴⁺And K₂GeF₆:Mn⁴ ⁺(ii) a Preferably K₂SiF₆:Mn⁴⁺。

In order to improve the reliability of the light-emitting device, the moisture permeability of the encapsulation layer is 11g/m²Less than 24Hr and oxygen permeability of 400g/m^2/Below 24 Hr; the moisture permeability is preferably 10.5g/m²Less than 24Hr and oxygen permeability of 382g/m²Less than 24 Hr. In this embodiment, the material of the encapsulation layer can be selected from, for example, phenyl-based silicone or methyl-based silicone. The refractive index of the encapsulating layer is, for example, 1.5 or more; preferably between 1.50 and 1.56.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

In the description of the present invention, it is to be understood that the terms "comprises" and "comprising," and any variations thereof, as used herein, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

Unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integral to one another; either directly or indirectly through intervening media, such as through internal communication or through an interaction between two elements. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.

Claims

1. A package structure, comprising:

a light emitting element;

the packaging layer is arranged in the groove and covers the light-emitting element, a quantum dot fluorescent material and a non-quantum dot fluorescent material are distributed in the packaging layer, and the quantum dot fluorescent material is distributed in one end, far away from the light-emitting element, of the packaging layer, so that the quantum dot fluorescent material is isolated from the light-emitting element;

the light-emitting element comprises a first light-emitting chip and a second light-emitting chip, wherein the wave band of the first light-emitting chip is different from that of the second light-emitting chip.

2. The package structure of claim 1, wherein the encapsulation layer comprises a first encapsulation layer and a second encapsulation layer overlying the first encapsulation layer, wherein the first encapsulation layer is disposed within the recess and covers the sides and top of the light emitting element and the leads of the light emitting element, wherein the non-quantum dot phosphor material is in the first encapsulation layer, wherein the quantum dot phosphor material is in the second encapsulation layer, or wherein the non-quantum dot phosphor material is in the second encapsulation layer,

the quantum dot phosphor material and the non-quantum dot phosphor material are both located in the second encapsulation layer.

3. The package structure of claim 1, wherein the encapsulation layer comprises a spacer layer, an encapsulation glue layer and a protection layer, wherein the quantum dot phosphor material and the non-quantum dot phosphor material are stacked in the encapsulation glue layer, the spacer layer is disposed in the recess and covers the light emitting element, the encapsulation glue layer covers the spacer layer, and the protection layer covers the encapsulation glue layer.

4. The package structure according to claim 3, wherein the isolation layer is a film made of a vulcanization resistant material;

the protective layer is made of silicone.

5. The package structure according to claim 3, wherein the isolation layer is made of white glue, and a top surface of the isolation layer is lower than or flush with a top surface of the light emitting element.

6. The package structure of any of claims 1-5, wherein the quantum dot phosphor material is isolated from the leads of the light emitting element by the encapsulation layer.

7. The package structure according to claim 1, wherein one of the first light emitting chip and the second light emitting chip has a wavelength band of 445 to 447.5nm, and the other has a wavelength band of 452.5 to 455 nm.

8. The package structure of any one of claims 1 to 5, wherein the carrier comprises:

9. A light emitting device, comprising:

a package structure according to any of the preceding claims 1-8;