CN209071007U - A kind of ITO conductive film structure of low-resistance high transmittance - Google Patents
A kind of ITO conductive film structure of low-resistance high transmittance Download PDFInfo
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- CN209071007U CN209071007U CN201821717136.4U CN201821717136U CN209071007U CN 209071007 U CN209071007 U CN 209071007U CN 201821717136 U CN201821717136 U CN 201821717136U CN 209071007 U CN209071007 U CN 209071007U
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- ito
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- conductive film
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- 238000002834 transmittance Methods 0.000 title claims abstract description 19
- 239000010410 layer Substances 0.000 claims abstract description 70
- 239000002344 surface layer Substances 0.000 claims abstract description 12
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 9
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 9
- 229920003023 plastic Polymers 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 150000003503 terephthalic acid derivatives Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Non-Insulated Conductors (AREA)
Abstract
The utility model relates to a kind of ITO conductive film structure of low-resistance high transmittance, including surface layer ITO layer, the SiO that the Ag film layer below the surface layer ITO layer is set, is arranged in below the Ag film layer2Film layer and setting are in the SiO2Transparent plastic substrate layer below film layer.Pass through setting Ag film layer and SiO2The flexibility and electric conductivity of conductive film can be improved in film layer.Surface layer ITO layer can not only prevent Ag layers of oxidation, improve film wearability, be also used as anti-reflection layer to improve film visible light transmittance.The sheet resistance of the utility model is low, transmitance is high, moreover it is possible to play heat-insulated, Low emissivity and good effectiveness.
Description
Technical field
The utility model relates to conductive technical field of membrane, in particular to a kind of ITO conductive film of low-resistance high transmittance
Structure.
Background technique
Conductive film is a kind of indium tin oxide films with conducting function, and substrate is usually the modeling of PET(poly terephthalic acid class
Material) material, be in PET film formed with rare metal In(indium) be primary raw material ITO(Indium Tin Oxide) target
Material and it is manufactured.
As a kind of n-type semiconductor, ITO conductive film own carrier concentration (resistivity is low) with higher is prohibited
The optical signatures such as bandwidth 1, visible range light transmission height.Since light transmittance and electric conductivity are preferable, ITO conductive film is wide
It is general to be applied to the numerous areas such as flat-panel display device, solar battery.The key property of ITO conductive film includes: (1) electric conductivity
Can be good, resistivity is up to 10-4 Ω cm；(2) visible light transmittance rate is high, up to 85% or more；(3) have to ultraviolet light and absorb
Property, absorptivity is 85% or more；(4) there is reflectivity to infrared ray, reflectivity is 80% or more；(5) there is Decay Rate to microwave,
Attenuation rate is also up to 85%(6) thin layer hardness height, it is wear-resisting, it is resistant to chemical etching；(7) film layer processing performance is good, convenient for etching etc..It is high
Visible light transmittance rate be combined together with rather low resistivity, so that ito thin film is become most excellent saturating of current comprehensive performance
One of bright conductive material.
It is existing since the flexibility that the conductivity of existing ito film is limited by its conductive mechanism and ito film is poor
ITO nesa coating can no longer meet the advanced electrooptical device such as automatic vending machine to electric conductivity, transmitance, strong heat-insulated, low spoke
It penetrates, the increasingly higher demands such as electromagnetic shielding effect.
Summary of the invention
The purpose of this utility model is to provide a kind of ITO conductive film structure of low-resistance high transmittance, sheet resistance is low, penetrates
Rate is high, and has heat-insulated, Low emissivity and good effectiveness.
A kind of ITO conductive film structure of low-resistance high transmittance, including surface layer ITO layer are arranged below the surface layer ITO layer
Ag film layer, the SiO that is arranged in below the Ag film layer2Film layer and setting are in the SiO2Transparent plastic base below film layer
Material layer.
Further, the transparent plastic substrate layer is the PET base material layer for being coated with IM layers.
Further, the surface layer ITO layer with a thickness of 23-27nm.
Further, the Ag film layer with a thickness of 200-250nm.
Further, the Ag film layer and the SiO2Bottom ITO layer is equipped between film layer.
Further, the bottom ITO layer with a thickness of 23-27nm.
Further, the conductive film with a thickness of 200 microns.
Compared with prior art, the utility model has the beneficial effects that passing through setting Ag film layer and SiO2Film layer can be improved
The flexibility and electric conductivity of conductive film.Surface layer ITO layer can not only prevent Ag layers of oxidation, improve film wearability, can be with
Film visible light transmittance is improved as anti-reflection layer.The sheet resistance of the utility model is low, transmitance is high, moreover it is possible to play heat-insulated, low
Radiation and good effectiveness.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the ITO conductive film structure of the low-resistance high transmittance of the utility model.
Specific embodiment
The utility model is described in further detail below in conjunction with specific embodiments and drawings.
As shown in Figure 1, the ITO conductive film structure of the low-resistance high transmittance of the utility model is main in a preferred embodiment
Including surface layer ITO layer 1, the Ag film layer 2 being arranged in below surface layer ITO layer 1, the SiO being arranged in below Ag film layer 22Film layer 3, with
And it is arranged in SiO2The transparent plastic substrate layer 4 of 3 lower section of film layer.
As a preferred embodiment, Ag film layer 2 and SiO2Bottom ITO layer 5, bottom ITO are equipped between film layer 3
Layer 5 can further protect Ag film layer 2, prevent Ag film layer 2 from aoxidizing, while improving the crystallinity of Ag film layer 2.
The utility model successively plates the method preparation of each layer using magnetically controlled sputter method in PET base material layer, wherein table
Layer ITO layer 1 is with a thickness of 23-27nm, and Ag film layer 2 is with a thickness of 200-250nm, and bottom ITO layer 5 is with a thickness of 23-27nm；Conductive film thickness
Degree is 200um.For the conductive film sheet resistance value of the utility model less than 5 ohm, transmitance is greater than 75%, has good conductive property
And light transmission.
Although the description combination embodiments above to the utility model carries out, it is familiar with the art
Personnel can carry out many replacements based on the above contents, modifications and variations, be obvious.Therefore, all such
Substitution, improvements and changes are included in the spirit and scope of appended claims.
Claims (6)
1. a kind of ITO conductive film structure of low-resistance high transmittance, which is characterized in that including surface layer ITO layer, be arranged on the surface layer
Ag film layer below ITO layer, the SiO being arranged in below the Ag film layer2Film layer and setting are in the SiO2Below film layer
Transparent plastic substrate layer, the Ag film layer and the SiO2Bottom ITO layer is equipped between film layer.
2. the ITO conductive film structure of low-resistance high transmittance according to claim 1, which is characterized in that the transparent plastic
Substrate layer is the PET base material layer for being coated with IM layers.
3. the ITO conductive film structure of low-resistance high transmittance according to claim 1, which is characterized in that the surface layer ITO layer
With a thickness of 23-27nm.
4. the ITO conductive film structure of low-resistance high transmittance according to claim 1, which is characterized in that the Ag film layer
With a thickness of 200-250nm.
5. the ITO conductive film structure of low-resistance high transmittance according to claim 1, which is characterized in that the bottom ITO layer
With a thickness of 23-27nm.
6. the ITO conductive film structure of low-resistance high transmittance according to any one of claims 1-5, which is characterized in that institute
State conductive film with a thickness of 200 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821717136.4U CN209071007U (en) | 2018-10-23 | 2018-10-23 | A kind of ITO conductive film structure of low-resistance high transmittance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821717136.4U CN209071007U (en) | 2018-10-23 | 2018-10-23 | A kind of ITO conductive film structure of low-resistance high transmittance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209071007U true CN209071007U (en) | 2019-07-05 |
Family
ID=67095720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821717136.4U Expired - Fee Related CN209071007U (en) | 2018-10-23 | 2018-10-23 | A kind of ITO conductive film structure of low-resistance high transmittance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209071007U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111018363A (en) * | 2020-01-17 | 2020-04-17 | 中国电子科技集团公司第三十三研究所 | ITO thin film glass capable of improving electromagnetic shielding effect and preparation method thereof |
| CN113223753A (en) * | 2021-05-07 | 2021-08-06 | 江苏华微薄膜科技有限公司 | High-light-transmission low-resistance composite ITO film |
| US11269474B2 (en) | 2020-04-28 | 2022-03-08 | Beijing Zenithnano Technology Co., Ltd | Touch devices |
| US11269466B2 (en) | 2020-04-28 | 2022-03-08 | Beijing Zenithnano Technology Co., Ltd. | Touch panels |
| CN116715890A (en) * | 2023-07-31 | 2023-09-08 | 阿梓萨科技(深圳)有限公司 | Method for preparing antireflection film by adopting core-shell microstructure light-transmitting particles |
-
2018
- 2018-10-23 CN CN201821717136.4U patent/CN209071007U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111018363A (en) * | 2020-01-17 | 2020-04-17 | 中国电子科技集团公司第三十三研究所 | ITO thin film glass capable of improving electromagnetic shielding effect and preparation method thereof |
| US11269474B2 (en) | 2020-04-28 | 2022-03-08 | Beijing Zenithnano Technology Co., Ltd | Touch devices |
| US11269466B2 (en) | 2020-04-28 | 2022-03-08 | Beijing Zenithnano Technology Co., Ltd. | Touch panels |
| CN113223753A (en) * | 2021-05-07 | 2021-08-06 | 江苏华微薄膜科技有限公司 | High-light-transmission low-resistance composite ITO film |
| CN116715890A (en) * | 2023-07-31 | 2023-09-08 | 阿梓萨科技(深圳)有限公司 | Method for preparing antireflection film by adopting core-shell microstructure light-transmitting particles |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190705 |