CN208663464U - Chemical mechanical polishing device - Google Patents
Chemical mechanical polishing device Download PDFInfo
- Publication number
- CN208663464U CN208663464U CN201821243044.7U CN201821243044U CN208663464U CN 208663464 U CN208663464 U CN 208663464U CN 201821243044 U CN201821243044 U CN 201821243044U CN 208663464 U CN208663464 U CN 208663464U
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- CN
- China
- Prior art keywords
- grinding pad
- conditioner discs
- finishing
- chemical mechanical
- mechanical polishing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000000126 substance Substances 0.000 title claims abstract description 34
- 238000005498 polishing Methods 0.000 title claims abstract description 23
- 238000009826 distribution Methods 0.000 claims abstract description 11
- 230000003750 conditioning effect Effects 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000002421 finishing Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- KNVAYBMMCPLDOZ-UHFFFAOYSA-N propan-2-yl 12-hydroxyoctadecanoate Chemical compound CCCCCCC(O)CCCCCCCCCCC(=O)OC(C)C KNVAYBMMCPLDOZ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
The utility model relates to technical field of manufacturing semiconductors more particularly to a kind of chemical mechanical polishing devices.The chemical mechanical polishing device, including grinding pad and finishing module；The grinding pad include coaxial arrangement multiple regions, and multiple regions along the grinding pad radial direction from center to edge distribution；The finishing module includes conditioner discs, and for being modified one by one using a variety of different finishing disk rotating speeds to multiple regions, and finishing disk rotating speed edge is sequentially reduced from the extrorse direction in the center of the grinding pad.The utility model effectively prevents conditioner discs during modifying grinding pad, because of the problem that grinding pad after modifying caused by inconsistent along the tangential velocity of the grinding pad in the radial direction is in uneven thickness.
Description
Technical field
The utility model relates to technical field of manufacturing semiconductors more particularly to a kind of chemical mechanical polishing devices.
Background technique
Chemical mechanical grinding (Chemical Mechanical Polishing, CMP) is one and passes through chemical reaction process
With the coefficient technique of mechanical grinding process.Grinding head, which applies certain pressure, in process of lapping makes wafer just in backside of wafer
It is close to grinding pad in face.Meanwhile grinding head drives wafer and the equidirectional rotation of grinding pad, generates wafer frontside and grinding pad mechanical
Friction.During the grinding process, by the thin film of the mechanically and chemically effect removal crystal column surface of a series of complex, to reach
To the purpose of wafer planarization.
But with the continuous progress of chemical mechanical planarization process, the physics and chemical property of grinding pad can change,
It shows as grinding pad surface and generates residual substance, volume-diminished, the quantity of micropore are reduced, and surface roughness reduces, and surface occurs
Molecular recombination phenomenon forms certain thickness glazing layer, leads to the reduction of grinding rate and grinding quality.Therefore, it is necessary to grinding
Mill pad carries out finishing appropriate, denudes the surface of the grinding pad and aperture, and dimpling object is created on the surface of grinding pad, i.e., with
Physics mode penetrates the porous layer of the grinding pad surface.
Typical trimmer is usually diamond truer, including substrate and the diamond being fixedly arranged on substrate abradant surface
Particle, when being modified, abradant surface is parallel with grinding pad surface.During being modified using trimmer to grinding pad,
Trimmer rotates simultaneously and the reciprocally swinging around a fixed point in a preset range, and trimmer is pressed in certain pressure
Grinding pad surface, so that diamond abrasive particles are contacted with grinding pad surface and cut grinding pad, to realize to grinding
The cutting down on mill pad surface, so that grinding pad surface obtains required roughness.
But in actual dressing process, due to conditioner discs grinding pad surface tangential velocity in the radial direction not
Together, cause it is trimmed after grinding pad surface it is highly non-uniform, that is, the degree of wear of the grinding pad from center to edge after modifying by
It is cumulative to add.During chemical mechanical grinding, highly non-uniform grinding pad can make the surface topography of wafer be deteriorated, and influence
The total quality of product wafer.
Therefore, how to improve the uniformity for grinding mat thickness to improve the effect of chemical mechanical grinding is urgently to solve at present
Certainly the technical issues of.
Utility model content
The utility model provides a kind of chemical mechanical polishing device, for solving after the finishing of existing grinding mat trimmer
Grinding pad problem in uneven thickness improves the quality of product wafer to improve the effect of chemical mechanical grinding.
To solve the above-mentioned problems, the utility model provides a kind of chemical mechanical polishing device, including grinding pad and repairs
Whole group part；The grinding pad include coaxial arrangement multiple regions, and multiple regions along the grinding pad radial direction from
The heart is to edge distribution；The finishing module includes conditioner discs, for being turned one by one using a variety of different conditioner discs to multiple regions
Speed is modified, and finishing disk rotating speed edge is sequentially reduced from the extrorse direction in the center of the grinding pad.
Preferably, multiple regions include a border circular areas and multiple annular regions；The border circular areas is located at described grind
The center of pad is ground, multiple annular regions and the border circular areas are arranged concentrically and surround the peripheral distribution of the border circular areas.
Preferably, the finishing module further includes memory；The memory connects the conditioner discs, is used to store and more
A region a variety of finishing disk rotating speeds correspondingly.
Preferably, the finishing module further includes first sensor and controller；The first sensor connects the control
Device processed, for detecting the distance between the conditioner discs and the grinding pad center；The controller connects the conditioner discs, uses
In the region according to locating for the distance between the conditioner discs and the grinding pad center determining conditioner discs, and conditioner discs are controlled with phase
The finishing disk rotating speed answered is ground.
Preferably, the finishing module further includes conditioning arm；The conditioning arm includes the first end and second of opposite end
End, the second end connect the conditioner discs, past for carrying out within the scope of a predetermined angle around the first end
Multiple movement.
Preferably, the controller connects the conditioning arm, for adjusting the reciprocating speed of the conditioning arm.
Preferably, the finishing module further includes second sensor；The second sensor connects the controller, is used for
It detects the grinding mat thickness in trimmed rear each region and is transmitted to the controller；The controller be also used to judge with
Whether the one-to-one multiple grinding mat thicknesses of multiple regions are equal, if it is not, then controlling the conditioner discs to the grinding pad
It is modified again.
Grinding pad is divided into the multiple regions of coaxial arrangement by chemical mechanical polishing device provided by the utility model, and
Multiple regions along the grinding pad radial direction from center to edge distribution, by different regions use different finishings
Disk rotating speed is modified, so that conditioner discs are effectively prevented during modifying grinding pad, because along the grinding pad radial direction side
Grinding pad problem in uneven thickness, improves chemical mechanical grinding after modifying caused by upward tangential velocity is inconsistent
Effect improves the quality of product wafer.
Detailed description of the invention
Attached drawing 1 is the overlooking structure diagram of chemical mechanical polishing device in specific embodiment of the present invention；
Attached drawing 2 is the structural block diagram of finishing module in specific embodiment of the present invention.
Specific embodiment
The specific embodiment of chemical mechanical polishing device provided by the utility model is done specifically with reference to the accompanying drawing
It is bright.
Present embodiment provides a kind of chemical mechanical polishing device, and attached drawing 1 is the utility model specific embodiment party
The overlooking structure diagram of chemical mechanical polishing device in formula.As shown in Figure 1, the chemical machinery that present embodiment provides is ground
Mill apparatus, including grinding pad 11 and finishing module；Multiple regions of the grinding pad 11 including coaxial arrangement, and multiple regions edge
The radial direction of the grinding pad 11 is from center to edge distribution；The finishing module includes conditioner discs 12, for multiple areas
Domain is modified using a variety of different finishing disk rotating speeds one by one, and 12 revolving speed of the conditioner discs is along from the grinding pad 11
The extrorse direction of the heart is sequentially reduced.
When modifying to the grinding pad 11, on the one hand the grinding pad 11 axially carries out rotation around it, another
The aspect conditioner discs 12 also carry out rotation.The conditioner discs 12 are depended on along the tangential velocity of 11 radial direction of grinding pad
Distance of the revolving speed and the conditioner discs 12 of the grinding pad 11 apart from 11 center of grinding pad, and 11 surface of the grinding pad
The revolving speed in each region is identical, and therefore, the conditioner discs 12 are ground described in along the tangential velocity of the grinding pad 11 in the radial direction
The center of mill pad 11 is gradually increased to edge, thus under the action of the tangential velocity of the conditioner discs 12, the grinding pad 11
The degree of wear at edge be greater than the center of the grinding pad 11.In present embodiment, by the way that grinding pad 11 is divided
For the multiple regions of coaxial arrangement, the conditioner discs 12 modify each region using corresponding finishing disk rotating speed,
And 12 revolving speed of the conditioner discs edge is sequentially reduced from the extrorse direction in center of the grinding pad 11, to compensate because of the finishing
The grinding pad 11 caused by tangential velocity of the disk 12 in multiple regions along 11 radial direction of grinding pad is inconsistent is being repaired
The inconsistent problem of the degree of wear during whole, so that the whole surface of the grinding pad 11 after the conditioner discs 12 finishing
The degree of wear is uniform, it is ensured that the consistency of polished 11 thickness of grinding pad is ground to be effectively improved subsequent chemical mechanical
The effect of mill improves the quality of product wafer.
In order to simplify the overall structure of the chemical mechanical polishing device, it is preferred that multiple regions include a border circular areas
111 and multiple annular regions；The border circular areas 111 is located at the center of the grinding pad 11, multiple annular regions with it is described
Border circular areas 111 is arranged concentrically and surrounds the peripheral distribution of the border circular areas 111.
Present embodiment by taking the grinding pad 11 includes a border circular areas 111 and three annular regions as an example into
Row explanation, those skilled in the art can be set according to actual needs the quantity of annular region.As shown in Figure 1, multiple regions packet
Include the border circular areas 111 being arranged concentrically, first annular region 112, the second annular region 113 and third annular region 114.Its
In, border circular areas 111, the first annular region 112, second annular region 113 and 114 edge of third annular region
The radial direction of the grinding pad 11 is from the center of the grinding pad 11 to edge distribution.
Attached drawing 2 is the structural block diagram of finishing module in specific embodiment of the present invention.Preferably, the finishing module
It further include memory 21；The memory 21 connects the conditioner discs 12, a variety of correspondingly with multiple regions for storing
Modify disk rotating speed.Wherein, a variety of finishing disk rotating speeds stored in the memory 21 can be the life of chemical mechanical polishing device
Business men is preset, is also possible to user according to their own needs, such as according to grinding pad and/or the concrete type of abrasive disk
It is arranged.
In order to quickly position region locating for the conditioner discs 12, to adjust the revolving speed of the conditioner discs in time, thus
Further increase the uniformity that mat thickness is ground after modifying, it is preferred that the finishing module further includes first sensor 22 and control
Device 20 processed；The first sensor 22 connects the controller 20, for detecting in the conditioner discs 12 and the grinding pad 11
The distance between heart；The controller 20 connects the conditioner discs 12, for according to the conditioner discs 12 and the grinding pad 11
The distance between center determines region locating for conditioner discs 12, and controls conditioner discs 12 and ground with modifying disk rotating speed accordingly.
Due in present embodiment, multiple regions along the grinding pad 11 radial direction from center to edge distribution, pass through reality
When obtain the distance between the conditioner discs 12 and described 11 center of grinding pad, can quickly judge the current institute of the conditioner discs 12
The region at place, and then select finishing disk rotating speed corresponding with region is presently in carry out finishing grinding from the memory 21.
Preferably, the finishing module further includes conditioning arm 13；The conditioning arm 13 includes the first end 131 of opposite end
With second end 132, the second end 132 connects the conditioner discs 12, for default one around the first end 131
It moves back and forth in angular range.It is furthermore preferred that the controller 20 connects the conditioning arm 13, for adjusting the finishing
The reciprocating speed of arm 13.Specifically, as shown in Figure 1, the conditioning arm 13 drives the conditioner discs 12 institute along figure
The dashed trace shown is reciprocating, when the speed moved back and forth determines stop of the conditioner discs 12 in each region
Between.Therefore, the speed reciprocating by adjusting the conditioning arm 13, for example, it is past by adjusting driving the conditioning arm 13 to make
The revolving speed of the motor moved again can further adjust the conditioner discs 12 to the finishing degree in each region, thus further
Improve the uniformity that mat thickness is ground after modifying.
Preferably, the finishing module further includes second sensor 23；The second sensor 23 connects the controller
20, for detecting 11 thickness of grinding pad in trimmed rear each region and being transmitted to the controller 20；The controller
20 are also used to judge whether be equal with the one-to-one multiple grinding mat thicknesses of multiple regions, if it is not, then controlling the finishing
Disk 12 modifies the grinding pad 11 again.Wherein, the judgement of controller 20 is multiple correspondingly with multiple regions
The specific method whether grinding mat thickness is equal, identical as comparison algorithm in the prior art, details are not described herein.
Specifically, after the conditioner discs 12 are completed to the primary finishing of entire grinding pad 11, second sensing
Device 23 detects the thickness of the grinding pad 11 in each region, obtains and multiple regions multiple grinding mat thicknesses correspondingly.
The controller 20 judges whether this multiple grinding mat thickness is equal, if it is not, then confirm that the grinding pad 11 is in uneven thickness,
And it controls the conditioner discs 12 and the grinding pad 11 is modified again.For example, the controller 20 multiple can be ground
On the basis of grinding the minimum thickness in mat thickness, the region in addition to region corresponding with the minimum thickness is repaired again
It is whole.Wherein, described to modify again, it can be the finishing disk rotating speed to store in the memory 21 and corresponding region carried out again
Secondary finishing；It is also possible to adjust the revolving speed of the conditioner discs 12 by the controller 20, so that the conditioner discs are treated again
It is modified using the revolving speed different with the corresponding finishing disk rotating speed stored in the memory in the region of finishing.
Grinding pad, is divided into multiple areas of coaxial arrangement by the chemical mechanical polishing device that present embodiment provides
Domain, and multiple regions along the grinding pad radial direction from center to edge distribution, by different region using different
Finishing disk rotating speed modified, so that conditioner discs are effectively prevented during modifying grinding pad, because along the grinding pad
Grinding pad problem in uneven thickness, improves chemical machinery after modifying caused by tangential velocity in the radial direction is inconsistent
The effect of grinding improves the quality of product wafer.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
Art personnel can also make several improvements and modifications without departing from the principle of this utility model, these improvements and modifications
Also it should be regarded as the protection scope of the utility model.
Claims (7)
1. a kind of chemical mechanical polishing device, which is characterized in that including grinding pad and finishing module；The grinding pad includes coaxial
The multiple regions of setting, and multiple regions along the grinding pad radial direction from center to edge distribution；The finishing module
Including conditioner discs, for being modified one by one using a variety of different finishing disk rotating speeds to multiple regions, and the conditioner discs turn
Speed edge is sequentially reduced from the extrorse direction in the center of the grinding pad.
2. chemical mechanical polishing device according to claim 1, which is characterized in that multiple regions include a border circular areas with
And multiple annular regions；The border circular areas is located at the center of the grinding pad, and multiple annular regions and the border circular areas are same
Heart setting and the peripheral distribution for surrounding the border circular areas.
3. chemical mechanical polishing device according to claim 2, which is characterized in that the finishing module further includes storage
Device；The memory connects the conditioner discs, is used for storage and multiple regions a variety of finishing disk rotating speeds correspondingly.
4. chemical mechanical polishing device according to claim 3, which is characterized in that the finishing module further includes the first biography
Sensor and controller；The first sensor connects the controller, for detecting the conditioner discs and the grinding pad center
The distance between；The controller connects the conditioner discs, for according between the conditioner discs and the grinding pad center
Distance determines region locating for conditioner discs, and controls conditioner discs and ground with modifying disk rotating speed accordingly.
5. chemical mechanical polishing device according to claim 4, which is characterized in that the finishing module further includes finishing
Arm；The conditioning arm includes the first end and second end of opposite end, and the second end connects the conditioner discs, for enclosing
It moves back and forth within the scope of a predetermined angle around the first end.
6. chemical mechanical polishing device according to claim 5, which is characterized in that the controller connects the finishing
Arm, for adjusting the reciprocating speed of the conditioning arm.
7. chemical mechanical polishing device according to claim 4, which is characterized in that the finishing module further includes the second biography
Sensor；The second sensor connects the controller, for detecting the grinding mat thickness in trimmed rear each region simultaneously
It is transmitted to the controller；Whether the controller is also used to judge equal with the one-to-one multiple grinding mat thicknesses of multiple regions
It is equal, the grinding pad is modified again if it is not, then controlling the conditioner discs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821243044.7U CN208663464U (en) | 2018-08-02 | 2018-08-02 | Chemical mechanical polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821243044.7U CN208663464U (en) | 2018-08-02 | 2018-08-02 | Chemical mechanical polishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208663464U true CN208663464U (en) | 2019-03-29 |
Family
ID=65833066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821243044.7U Expired - Fee Related CN208663464U (en) | 2018-08-02 | 2018-08-02 | Chemical mechanical polishing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208663464U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111515864A (en) * | 2020-04-30 | 2020-08-11 | 华虹半导体(无锡)有限公司 | Monitoring method and system for diamond disk |
| CN114473842A (en) * | 2020-11-11 | 2022-05-13 | 中国科学院微电子研究所 | Grinding disc, chemical mechanical polishing device, system and method |
-
2018
- 2018-08-02 CN CN201821243044.7U patent/CN208663464U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111515864A (en) * | 2020-04-30 | 2020-08-11 | 华虹半导体(无锡)有限公司 | Monitoring method and system for diamond disk |
| CN114473842A (en) * | 2020-11-11 | 2022-05-13 | 中国科学院微电子研究所 | Grinding disc, chemical mechanical polishing device, system and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190329 |
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| CF01 | Termination of patent right due to non-payment of annual fee |