CN208623098U - Laser diode surface installation structure - Google Patents

Abstract

The utility model is a kind of related laser diode surface installation structure, comprising: an at least edge-emitting laser coated diode chip includes two electrodes；One heat-conducting plate, with a Upper conductive layer, a underlying conductive layer and at least one through the electric conductor perforation of the Upper conductive layer and the underlying conductive layer, to carry a pole of at least two electrodes of an edge-emitting laser coated diode chip；Two or more the metal plates for being spaced apart from each other and being configured in a plane, wherein one first metal plate is configured at the lower section of the heat-conducting plate and contacts with the underlying conductive layer of the heat-conducting plate, one second metal plate is configured at adjacent and separates in first metal plate；And one there is opening Insulating frame, be set to above two or more the metal plates, to hold described two or more metal plates.

Description

Laser diode surface installation structure

Technical field

The utility model is a kind of related laser diode surface installation structure, especially a kind of to use surface mounting technique (SMT) edge-emitting laser diode encapsulating structure can meet high current, high heat dissipation and the needs of without thermal stress.

Background technique

Fig. 1 includes Fig. 1 a and Fig. 1 b, show the middle and high power of existing edge-emitting (referring to that Output optical power is greater than 50 mW) and swashs The encapsulation architecture of near-infrafed photodiodes, wherein Fig. 1 a is laser diode chip architecture, and Fig. 1 b is existing laser diode encapsulation architecture. With reference to Fig. 1 a, with based on substrate (substrate, 100), then the structure of laser diode chip (laser chip) is With various sedimentations by atom packing on substrate, claim epitaxial layer (epitaxial layer, 101).For feux rouges and close red The laser diode chip of outer light (0.7 ~ 1.1 um), mostly GaAs (GaAs) crystal, infrared light (1.1 ~ 1.9 um) chip Mostly indium phosphide (InP) crystal acts on mechanical support and heat dissipation, about 0.3 mm of thickness；Epitaxial layer be then have arsenic, gallium, indium, The semiconducting compound of the III-V elements such as phosphorus, aluminium composition, subdivision have nearly ten layers, about 1 um of aggregate thickness.Laser resonator It (106) is that a zonule is done with light shield etching technique in epitaxial layer (101), wide about 50 um is about 500 um, main output The oval light cone of laser projects (107), and pair output laser direction (108) is opposite with main output laser.In substrate (100) and build Outside crystal layer (101), also want plating metal so as to conductive (Fig. 1 (a) does not show).Existing laser diode encapsulation architecture refers to Fig. 1 b, For chip to weld or gluing is fixed on the heat-conducting plate that can be radiated rapidly (submount, 103), there is metal layer on heat-conducting plate upper layer (105), tie jumper above chip (bonding wire, 102, metallic conductor), wire jumper connect another metal layer (109), and two Metal layer mark+and-locate as weld pad, for welding wire (not shown), to supply electricity to chip.Heat-conducting plate (103) then closely connects The shell (enclosure, 104, mostly sheet metal) of encapsulation is touched, general middle power is to use the attached shell of gluing, and high power is then Heat-conducting plate two panels plating metal, then it is welded in shell.Shell is in close contact that one heat sink (heat sink, 110, also known as radiate again Device), to radiate.In existing framework, electric current will be marked by (105) and (109)+and-it separately connects conducting wire and enters and leaves chip, heat It is then to originate from laser resonator, by heat-conducting plate, shell to hot Shen.It is (such as of heap of stone in the different material junction of thermal expansion coefficient Between crystal layer 101 and heat-conducting plate 103), heat will cause stress distortion crystal lattice, and good laser resonator (106) is sharp originally Light generation efficiency subtracts greatly, also totally unfavorable to laser-quality and service life, is that middle high power laser light has to the technology overcome hardly possible It closes.High power edge-emitting laser diode in realizing just has to provide high current and big radiated energy simultaneously, under considering 3 points: 1. of column fevers concentrate on laser resonator (106), it is necessary to heat dissipation rapidly, and the substrate of laser diode is too thick and thermally conductive Coefficient is too low, therefore most existing products are to be attached to the heat-conducting plate that can be radiated rapidly (103) with epitaxial layer (101)；2. and of heap of stone The heat-conducting plate (103) of crystal layer (101) contact, coefficient of thermal expansion is preferably and epitaxial layer (101) is close, otherwise will form thermal stress, The lattice of epitaxial layer (101) is distorted, such laser resonator (106) efficiency and service life can also subtract with big；3. to avoid heat from answering Power, it is also possible to which very soft material is between epitaxial layer and heat-conducting plate, such as indium or elargol, absorbs the two because expanding with heat and contract with cold due to shape At deformation, but service life of this kind of material and imperfect, become very hard as indium is easy to oxidize, and the electrical conductivity of elargol is not high, Empty (void) can be generated after heating, become the obstacle of heat and electric current, all unbearable high current of the two；4. still there is part hot Amount can be conducted by wire jumper (102), if wire jumper at mal-distribution on chip, also will form thermal stress.

So existing laser diode chip architecture, it is clear that high current, high heat dissipation can not be met simultaneously, without thermal stress three Item demand, and have improved space greatly, it further relates to as follows:

US5825054A is to do heat-conducting plate with silicon, though silicon is that semiconductor is electrically conductive, electrical conductivity is very low, cannot and gold Symbolic animal of the birth year ratio.149 W/(mK of thermal conductivity of silicon) (unit of thermal conductivity hereafter is all in this way, therefore omit), the coefficient of expansion 2.6 Ppm/ DEG C (unit of the coefficient of expansion hereafter is all in this way, therefore omit)；And the thermal conductivity 285 of aluminium nitride (AlN), thermal expansion coefficient 4.5, it is closer to the 6.86 of GaAs, the 4.60 of indium phosphide, also there is more preferably thermal conductivity.Thermally conductive is by long plug-in type pin (lead) it conducts, Path too long, it is also not possible to apply in middle high power (being greater than 100 mW).

DE102015114292A1 discloses two embodiments, first is that laser chip is placed directly on pin, second is that with FR4 or Ceramic PCB.Though copper is the good conductor of heat with electricity, 6.86 differences of its coefficient of expansion 16.5 and gallium arsenide are very big, also not Possible application is in high power.US9379517B2 is also not have to heat-conducting plate, and similarly it cannot carry the big laser chip of heat dissipation capacity.

The upper and lower surface of aluminium nitride heat-conducting plate and side are all plated metal by US9728935, so that electric current passes through heat-conducting plate. However, in heat-conducting plate surface gold-plating, finite thickness, and current path is too long, centering high power is simultaneously unfavorable.

US8130807 is mentioned with tungsten-copper alloy (CuW) as heat-conducting plate, although CuW thermal expansion coefficient (6.5 ppm/ DEG C) With GaAs close to (6.86 ppm/ DEG C), but its thermal coefficient is very low (170 W/m K), less than aluminium nitride (2850 W/ M K) 1/10th, cannot be used in high-power.

US2018/0062346A1 is that multiple series laser diodes is to be cascaded with routing, its heat-conducting plate It is gold-plated up and down as known aluminium nitride substrate, it will not be conductive up and down.Such structure, the routing of heat-conducting plate is completely in list Side, and it is asymmetric, it necessarily will appear thermal stress.

Therefore, many missings as described above can be caused in the encapsulating structure of existing various laser diodes, this is practical new Type is directed to the laser diode surface installation structure that can be solved the above problems at one stroke.

Utility model content

The utility model will be intended to provide a kind of laser diode surface installation structure, can take into account edge-emitting laser two Polar body fever concentrates on laser resonator epitaxial layer and must radiate rapidly, and the coefficient of thermal expansion of the heat-conducting plate contacted with epitaxial layer must be with Epitaxial layer is close and will not form thermal stress, can bear high current and wire jumper must have and be symmetrically distributed in the important need such as chip It asks, thus proposes that one kind can meet high current, high heat dissipation and the laser diode surface installation structure without thermal stress simultaneously, with one Lift the missing and blind spot for overcoming the prior art.

Another main idea of the utility model has reintroduced a kind of laser diode surface installation knot suitable for middle and high power Structure can quickly and effectively radiate, thus so that laser diode is maintained preferable luminous efficiency, and possess longer service life.

A kind of laser diode surface installation structure according to the present utility model, including

An at least edge-emitting laser coated diode chip includes two electrodes with an anode and a cathode；

One heat-conducting plate has a Upper conductive layer, a underlying conductive layer and at least one under the Upper conductive layer and this The electric conductor perforation of layer conductive layer, to carry a pole of at least two electrodes of an edge-emitting laser coated diode chip, this is extremely A few electric conductor perforation is to conduct the Upper conductive layer and the underlying conductive layer；

Two or more the metal plates for being spaced apart from each other and being configured in a plane, wherein to be configured at this thermally conductive for one first metal plate The lower section of plate is simultaneously contacted with the underlying conductive layer of the heat-conducting plate, and one second metal plate is configured at adjacent and separates in first metal Plate, second metal plate are electrically connected by an at least wire jumper with another pole of two electrode；And

One has the Insulating frame of opening, is set to above two or more the metal plates, to hold described two with On metal plate, wherein the opening is passed through with the laser light emitted for an at least edge-emitting laser coated diode chip.

According to the utility model, laser diode crystal chip bearing is on heat-conducting plate, and the body thickness of heat-conducting plate is about 0.3mm, without too thick, function is first is that thermally conductive, second is that avoiding between laser diode chip and heat-conducting plate, because of thermal expansion coefficient It is different and generate thermal stress.Main outgoing laser beam emits forward to outside encapsulating, and separately has a secondary outgoing laser beam, and direction and master are defeated Out laser beam on the contrary, one rear of directive photosensitive diode, the intensity of main outgoing laser beam is about the 50 of secondary outgoing laser beam Times.Heat-conducting plate material is high with thermal conductivity and thermal expansion coefficient is close to laser diode wafer substrate (GaAs or indium phosphide) It is good, such as silicon carbide (thermal expansion coefficient 4.0), aluminium nitride or aluminium oxide (7.8), to reduce thermal stress.The upper layer of heat-conducting plate and Thin film conductor (such as gold, thickness approximate number um, to avoid thermal stress) all plates in lower layer, and from top to bottom bores a perforation, also has in hole Conductor (such as gold), makes electrically conductive between upper and lower level.Loss needed for heat-conducting plate can be considered the laser diode chip of its carrying Heat, and extend extension to the left and right or forwards, backwards, to realize preferable heat-sinking capability.Heat-conducting plate is placed in the first gold medal of front end Belong to plate, thickness about 0.2mm also need not be too thick, and material is that copper body is tin plating, and function is thermally conductive and conductive.

In the present invention, the production method of metal plate and known Wire lead for integrated circuit (lead frame) phase Seemingly, it is easy to mass production.The thermal expansion coefficient 16.5 of copper, is totally different from GaAs or indium phosphide crystal, is not appropriate for directly GaAs or indium phosphide crystal are carried, therefore the utility model changes by aluminium nitride or aluminium oxide heat-conducting plate carrying gallium arsenide, then Aluminium nitride heat-conducting plate is carried by the tin plating metal plate of copper body.Very due to the thermal expansion coefficient difference of aluminium nitride or aluminium oxide and copper Greatly, it is contemplated that can have biggish thermal stress between heat-conducting plate and metal plate, however, this thermal stress can't distort epitaxy Layer will not cause to reduce laser life, this is because aluminium nitride or aluminium oxide hardness are greatly (Mohs' hardness is respectively 8 and 9), And copper is much soft (Mohs' hardness 3), so that this thermal stress can distort copper rather than aluminium nitride, epitaxial layer will not be turned round It is bent, it can be ensured that laser-quality.

Electric current by the first metal plate flow through heat-conducting plate, laser chip, wire jumper, to the second metal plate.Similarly other metal plates Also the electronic component institute of its visual carrying must loss heat and electric current, and to the left and right or extend back, it is preferably scattered to realize Thermal energy power and current load power.Wire jumper is divided into two groups, is listed in the left and right sides of laser chip respectively, keeps it symmetrical, to reduce heat Stress.The preferable arrangement mode of wire jumper is open in splayed, and masking is avoided to be incident upon swashing for electronic component or optical element backward Light.Since the intensity of laser can be widely varied with temperature, therefore the utility model is selectively placed in a photosensitive diode Laser diode rear to monitor its emitted luminescence intensity, then inputs paraphase end or a transistor for an operational amplifier, to push Laser diode, can be realized a negative-feedback luminous intensity stabilizing circuit, and all elements of this circuit are all mountable in this encapsulation.The One metal plate and the second metal plate all can (but being not limited to) carry out surface mounting technique (SMT), welding is on a printed circuit Surface conductor on (generally copper foil), the encapsulation of entire laser diode can install on circuit boards, have it is good conductive and Thermal conduction characteristic.The lower section of surface conductor is the ontology of printed circuit board, and known FR4(glass fiber reinforced plastics can be selected), Or radiating efficiency more preferably aluminum, aluminium nitride or aluminium oxide are ontology.With this structure, heat that most of epitaxial layer generates via Very thin heat-conducting plate and the first metal plate that is very thin and can substantially extending, is just directly conducted to the ontology of printed circuit board, approach Very short, heat-transfer rate is exceedingly fast.The approach and hot-fluid of electric current are about the same, and very short, pass through from the surface conductor of printed circuit board By the first very thin metal plate and very thin heat-conducting plate, the second metal plate then just is reached through wire jumper directly through epitaxial layer, no As the prior art may the mostly long wire jumper of another item, such framework its parasitic inductance and capacitance can be very low, for height Speed, high current, high power operation.

To maintain the relative position of all metal plates to immobilize, with Insulating frame fixing.Insulating frame has an opening It is projected for laser, accommodates laser diode and other elements, and protect the components from external force influence.

A upper cover can be added, in the present invention to be covered on Insulating frame.

To increase Insulating frame to the fixing power of metal plate, metal plate two sides optionally increase one or more convex closures (bump out), the convex closure of two sides is still symmetrical with center line, to exempt thermal stress.Existing metal plate is in line more, The utility model is improved to bend at more two, can increase Insulating frame to the fixing power of metal plate, metal plate is made to be less susceptible to rotate Or it is pullled cause and is detached from Insulating frame.

For the output power for seeking monitoring laser diode, photosensitive two pole optionally is installed additional at laser diode rear Body, third and the 4th metal plate, it has been observed that can also be held with Insulating frame.For the efficiency for increasing this laser diode, may be selected Property install additional electronic component, attachment on a metal plate, now list two embodiments: first case is such as lesser element, two pins It is to be connected to the first metal plate and the second metal plate as laser diode chip, is suitable for installation antistatic diode, inverse Inhibit the elements such as capacitor to bias protection diode, capacitor or surging, to protect laser diode.Laser diode is very in practice It is easy to be injured by electrostatic or surging, if having a protection element aside, can substantially extend the service life of laser diode.Second Example is biggish element, and one pin is connected to first or second metal plate and connects with a pole of laser diode chip, another One metal plate is connected to other metal plates, this example is suitable for installation current sensing resistor or thermistor, so as to monitoring laser two The electric current and temperature of polar body chip.If this element can significantly generate heat, it is contemplated that be moved out its position brilliant far from laser diode Piece, to maintain the symmetry of heat dissipation.If electronic component can also install metal plate additional there are many metal plate, such as push laser two MOSFET, integrated circuit or the negative-feedback luminous intensity stabilizing circuit above-mentioned of polar body, it is necessary to very close to laser diode to avoid Parasitic inductance and capacitor, so that it may be mounted on beside laser diode, just be able to achieve high speed heavy current pulse.

For the efficiency for increasing this laser diode, alternative installs one or more optical elements additional, is placed on outlet end, uses Insulating frame grips.A groove is set in opening the right and left of Insulating frame, the edge of optical element can be accommodated.Side The light beam of -emitting laser diode is inevitable at an oval angle light cone, and has comparable astigmatism (astigmatisim), for precision Application be it is very unfavorable, its light beam need be usually corrected with optical element and is just easy to apply, such as plus a cylindrical mirror or prism Oval angle light cone is transformed into circle.Furthermore most laser applications is all to utilize collimated light beam, therefore the utility model A collimating mirror (convex lens) can be set in laser light outlet end, divergent pencil is gathered into collimated light beam.After collimated light beam, A diffraction grating (or hologram) can be added to generate specific pattern line again, or add an optical crystal (such as Nd:YAG yttrium pyralspite) again It can produce solid-state laser, and again plus a nonlinear crystal (such as potassium titanyl phosphate KTiOPO4-KTP or lithium metaphosphate LiB₃O₅- LBO, also known as secondary harmonic generator) it can produce wavelength as the light wave of the half of former laser.It is solid with Insulating frame clamping Determine optical element, optical element can very close to laser, can light cone do not dissipate also it is very big before just by its pinching, light Beam diameter can very little, the very little so that optical mirror slip and whole system thereafter can contract to obtain, this can be significantly increased and answer Use field.

To increase heat dissipation effect, the first metal plate can be expanded, but be that the first metal plate after expanding is avoided to stop outgoing Light optionally sets a kerf in the first metal plate, and notch is V-arrangement.So just there is the first very big metal plate for radiating, It will not stop emergent light again.Notch can also be U-shaped or other shapes, such as add a collimating mirror by light cone pinching at collimated light according to above-mentioned Shu Hou, notch can be U-shaped, can thus have the first metal plate of larger area with benefit conduction heat.

For the light-receiving area for increasing photosensitive diode, the middle section of third metal plate is optionally distorted, middle section and its are made The photosensitive diode no longer maintenance level born, but be angled, increase effective area of shining light.Third metal plate Middle section is flexible at a L shape by the side of laser diode, to help photosensitive diode, maintains not fall before not mounting. The lowest part in the middle section of distortion maintains on virgin metal plate lower layer, is not too low, to go on smoothly surface installation.

If upper cover can also hold one or more optical elements it is necessary to use upper cover to protect laser chip and wire jumper etc., Upper cover can also set a groove in outlet end, accommodate the edge of optical element, so that optical element is clamped in upper cover and the first gold medal Belong between plate.

Optical element can also be turned up again with a part of hemisect of metal plate and be held.

The encapsulation of same laser diode can install multiple laser diode chips, can connect between chip or simultaneously Connection.

The encapsulation of same laser diode can also connect and multiple laser diode chips in parallel or two pole of a plurality of laser It connects again after parallel connection or a plurality of laser laser diode chips are in parallel again after body wafer tandem.Different power supplys can be directed to Voltage and take different series and parallel configurations, optimal power supply service efficiency can be obtained.

Detailed description of the invention

Fig. 1, includes Fig. 1 (a) and Fig. 1 (b), and Fig. 1 (a) shows that laser diode chip architecture, Fig. 1 (b) show existing side The surface installation structure of high power laser light diode in emitting.

Fig. 2 includes Fig. 2 (a), Fig. 2 (b), Fig. 2 (c) and Fig. 2 (d), shows the utility model edge-emitting laser diode Surface installation structure, Fig. 2 (a) are heat-conducting plate side view, and Fig. 2 (b) is without Insulating frame top view, and Fig. 2 (c) is the frame containing insulation Frame top view, Fig. 2 (d) are laser diode chip, heat-conducting plate and printed circuit board combination side view.

Fig. 3, includes Fig. 3 (a) and Fig. 3 (b), and display has multiple according to the utility model laser diode surface installation structure The circuit connection diagram of several laser diodes, Fig. 3 (a) are the figure in parallel of three laser diode chips, and Fig. 3 (b) is three and swashs The series connection figure of near-infrafed photodiodes chip.

Fig. 4, includes Fig. 4 (a) and Fig. 4 (b), and Fig. 4 (a) shows that the utility model third metal plate carries an additional electronics The top view of element, Fig. 4 (b) show the utility model in the inclined configuration of third metal plate for carrying an additional electronic component Side view.

Fig. 5 shows the utility model and holds optical element with the metal plate bent.

Symbol description

10 laser diode surface installation structures

20 1 edge-emitting laser diodes

21 liang of electrodes

211 anodes

212 cathodes

30 heat-conducting plates

31 Upper conductive layers

32 underlying conductive layers

A 33 at least electric conductor perforations

40 2 or more metal plates

The first metal plate of 40-1

The second metal plate of 40-2

40-3 third metal plate

The 4th metal plate of 40-4

50,50-1,50-2,50-3 wire jumper

60 Insulating frames

61 openings

62 main output laser ellipse light cones

70 electronic components

71 laser exit end notch

The bending of 73-1,73-2 metal plate

80 printed circuit boards

The surface conductor layer of 81 printed circuit boards

The ontology of 82 printed circuit boards

90 optical elements

100 substrates

101 epitaxial layers

102 wire jumpers

103 heat-conducting plates

104 shells

105,109 metal layer

106 laser resonators

107 oval light cones

108 secondary output laser directions

110 is heat sink.

Specific embodiment

Fig. 2 includes Fig. 2 (a), Fig. 2 (b), Fig. 2 (c) and Fig. 2 (d), and display is according to two pole of the utility model edge-emitting laser The surface installation structure figure of body, wherein Fig. 2 (a) is the side view of heat-conducting plate；Fig. 2 (b) is that laser diode chip is installed on gold Belong to plate and be free of Insulating frame top view；Fig. 2 (c) is overall structure figure of the structure containing Insulating frame shown in Fig. 2 (b)；And Fig. 2 (d) combination of side view of heat-conducting plate, the first metal plate and printed circuit board is sequentially installed on for laser diode chip.Please simultaneously With reference to Fig. 2 (a) Fig. 2 (b), Fig. 2 (c) and Fig. 2 (d), according to the laser diode surface installation structure 10 of one of the utility model, Include:

An at least edge-emitting laser coated diode chip 20 includes two electrodes 21 with an anode 211 and a cathode 212；

One heat-conducting plate 30 has a Upper conductive layer 31, a underlying conductive layer 32 and at least one through the Upper conductive layer And the electric conductor perforation 33(of the underlying conductive layer is as shown in Figure 2 (a) in detail), to carry an at least edge-emitting laser diode One pole 211 or 212 of two electrodes 21 of chip, an at least electric conductor perforation is to conduct the Upper conductive layer and the lower layer Conductive layer；

Two or more the metal plates 40 being spaced apart from each other and be configured in a plane, wherein the first metal plate 40-1 is configured at this The lower section of heat-conducting plate is simultaneously contacted with the underlying conductive layer of the heat-conducting plate, the second metal plate 40-2 be configured at it is adjacent and separate in this One metal plate, second metal plate are electrically connected by an at least wire jumper 50 with another pole 212 or 211 of two electrode；And

One has the Insulating frame 60 of opening 61, is set to above two or more the metal plates, to hold these two A above metal plate, wherein the opening is passed through with the laser emitted for an at least edge-emitting laser coated diode chip.

In the laser diode surface installation structure of the utility model, an at least wire jumper 50 be two wire jumper 50-1, 50-2 is connected to another pole 212 or 211 of an at least edge-emitting laser coated diode chip 20, is to be symmetrically distributed in this Mode at left and right sides of an at least edge-emitting laser coated diode chip overlaps.

For another example shown in the constitutional diagram of Fig. 2 (d), the laser diode surface installation structure 10 of the utility model is mountable to one Printed circuit board 80, the surface conductor layer 81 comprising an ontology 82 and coating thereon, wherein first metal plate 41 is welded in On the surface conductor layer 81.Certainly, which can also be used for welding other metal plates.

Separately in the present invention, please also refer to Fig. 3, an at least edge-emitting laser coated diode chip be it is a plurality of, These a plurality of edge-emitting laser coated diode chips make circuit connection, can be three laser diode chips as shown in Fig. 3 (a) 20 parallel configuration, can also three Laser Diodes 20 as shown in Figure 3 (b) arranged in series, can also make each according to need certainly Kind series and parallel configuration.

Again in the present invention, the material of the heat-conducting plate 30 is aluminium nitride, aluminium oxide or silicon carbide；And this two or more Metal plate material be copper；And the material of the Insulating frame is plastic cement, epoxy resin or bakelite.

In addition, as shown in Fig. 2, the laser diode surface installation structure 100 of the utility model, can include at least one in turn Additional electronic component 70, at least one additional electronic component can be a photosensitive diode, antistatic diode, reverse bias Diode, capacitor, transistor, integrated circuit or surging is protected to inhibit capacitor, and at least one additional electronic component is connected to Need to make circuit connection a third metal plate 40-3, one the 4th metal plate 40-4 and a wire jumper 50-3, these metal plates 40-3 and 40-4 is held by the Insulating frame.

In the present invention, the two sides of an at least metal plate 40 have convex closure disposed thereon, the convex closures of two sides with Center line is symmetrical.In addition, laser of the first metal plate 40-1 in an at least edge-emitting laser coated diode chip 20 Outlet end has a kerf 71, (such as Fig. 4 (a)), so that laser passes through.

As shown in figure 4, Fig. 4 (a) is top view, Fig. 4 (b) is the side view that third metal plate carries electronic component 70, In the laser diode surface installation structure of the utility model, to carry at least one additional electronic component 70, when it is One photosensitive diode, the third metal plate 40-3 connected are bent in the position for carrying at least one additional electronic component At an inclined-plane.It is in the same plane (void of such as Fig. 4 (b) unlike other metal plates shown in side diagram for another Fig. 4 (b) Line), the present embodiment is then in for at least normal line vector of the light-receiving surface of an electronic component and the rear laser center line angulation It is not 90 degree, to increase effective area of shining light, to match unification feedback control circuit, with stabilized lasers intensity.First gold medal Belong to plate 40-1 to extend to the outside to reinforce heat-sinking capability, and there is a kerf at laser exit end, so that laser passes through.

The laser diode surface installation structure of the utility model can include a upper cover (being not shown in the drawing) in turn, to Cover the Insulating frame.Respectively this two or more are spaced apart from each other and configure the metal plate in a plane and have bending (but still same flat On face), respectively such as the first metal plate 40-1 in Fig. 4 (a), shown in the left and right side of the second metal plate 40-2, to increase the insulation Frame holds the strength of the respectively metal plate.

As shown in figure 5, the laser diode surface installation structure of the utility model, can include an optical element 90 in turn, It is installed on 20 front of edge-emitting laser diode, can be held by the Insulating frame or by upper cover fixing or by a bendable The metal plate of folding is held, wherein the optical element 90 be a lens, filter, diffraction grating, prism, polariscope, optical crystal or Nonlinear optical crystal, to handle the light beam of the edge-emitting laser diode according to need.

In addition, the laser diode surface installation structure of the utility model, wherein at least one additional electronic component is One laser intensity stabilizing circuit.

Claims (18)

1. a kind of laser diode surface installation structure, comprising:

An at least edge-emitting laser coated diode chip includes two electrodes with an anode and a cathode；One heat-conducting plate has one Upper conductive layer, a underlying conductive layer and at least one are passed through through the electric conductor of the Upper conductive layer and the underlying conductive layer Hole, to carry a pole of at least two electrodes of an edge-emitting laser coated diode chip, an at least electric conductor perforation To conduct the Upper conductive layer and the underlying conductive layer；

Two or more the metal plates for being spaced apart from each other and being configured in a plane, wherein one first metal plate is configured at the heat-conducting plate Lower section and contacted with the underlying conductive layer of the heat-conducting plate, one second metal plate is configured at adjacent and separates in first gold medal Belong to plate, second metal plate is electrically connected by an at least wire jumper with another pole of two electrode；And

One has the Insulating frame of opening, is set to above described two or more metal plates, to hold described two or more Metal plate, wherein it is described opening passed through with the laser emitted for an at least edge-emitting laser coated diode chip.

2. laser diode surface installation structure according to claim 1, wherein an at least wire jumper is two wire jumpers It is connected to another pole of an at least edge-emitting laser coated diode chip, is to be symmetrically distributed in an at least edge-emitting Mode at left and right sides of laser diode chip overlaps.

3. laser diode surface installation structure according to claim 1, wherein two pole of an at least edge-emitting laser Body chip be it is a plurality of, a plurality of edge-emitting laser coated diode chips make circuit connection, and wherein the circuit connection is Series, parallel or combinations thereof.

4. laser diode surface installation structure according to claim 1, wherein the material of the heat-conducting plate be aluminium nitride, Aluminium oxide or silicon carbide.

5. laser diode surface installation structure according to claim 1, wherein the material of described two or more metal plates Material is copper.

6. laser diode surface installation structure according to claim 1, wherein the material of the Insulating frame be plastic cement, Epoxy resin or bakelite.

7. laser diode surface installation structure according to claim 1, and then include at least one additional electronic component.

8. laser diode surface installation structure according to claim 7, wherein at least one additional electronic component Diode, capacitor, transistor, integrated circuit or surging is protected to inhibit for a photosensitive diode, antistatic diode, reverse bias Capacitor, and at least one additional electronic component is connected to the metal plate that need to make circuit connection, the metal that the circuit is connected Plate is held by the Insulating frame.

9. laser diode surface installation structure according to claim 1, wherein an at least metal plate has convex closure Thereon.

10. laser diode surface installation structure according to claim 1, wherein first metal plate it is described at least The outlet end of one edge-emitting laser coated diode chip has a kerf, so that laser passes through.

11. laser diode surface installation structure according to claim 8, wherein additional to carry described at least one The metal plate that electronic component is connected in the position for carrying at least one additional electronic component at an inclined-plane, for it is described extremely The normal line vector of light-receiving surface and the center line angulation of rear laser of a few electronic component are not 90 degree.

12. laser diode surface installation structure according to claim 1, and then include a upper cover, it is described to cover Insulating frame.

13. laser diode surface installation structure according to claim 1, wherein each described two or more are spaced apart from each other And the metal plate configured in a plane has a bending, to increase the strength that the Insulating frame holds each metal plate.

14. laser diode surface installation structure according to claim 1, and then include an optical element, by described Insulating frame fixing.

15. laser diode surface installation structure according to claim 12, and then include an optical element, by described Upper cover fixing.

16. laser diode surface installation structure according to claim 1, and then include an optical element, it can by one The metal plate of bending is held.

17. laser diode surface installation structure described in 4,15 or 16 according to claim 1, wherein the optical element is one Lens, filter, diffraction grating, prism, polariscope, optical crystal or nonlinear optical crystal.

18. laser diode surface installation structure according to claim 1, and then include a printed circuit board, have one Ontology and a surface conductor layer on ontology, wherein first metal plate is connected on the surface conductor layer.