CN208352704U - A kind of passive Q-adjusted Yb:CaYAlO4 complete solid state pulse laser - Google Patents
A kind of passive Q-adjusted Yb:CaYAlO4 complete solid state pulse laser Download PDFInfo
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- CN208352704U CN208352704U CN201820501657.XU CN201820501657U CN208352704U CN 208352704 U CN208352704 U CN 208352704U CN 201820501657 U CN201820501657 U CN 201820501657U CN 208352704 U CN208352704 U CN 208352704U
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Abstract
The utility model provides a kind of passive Q-adjusted Yb:CaYAlO4Complete solid state pulse laser, comprising: laser diode, the first cemented doublet, the second cemented doublet, plane dichroic mirror, Yb:CaYAlO4Laser crystal, the first plano-concave mirror, flat output mirror, the second plano-concave mirror, semiconductor saturable absorbing mirror.The adjustable Q laser pulse of the utility model output has many advantages, such as that threshold value is low, repetition rate adjustable extent is wide, single pulse energy is high, stability is good and beam quality is excellent, have been widely used for nonlinear optics, spectroscopy, biomedical diagnostic, material processing and other fields, have a good application prospect and commercial value.
Description
Technical field
The utility model relates to laser technology field more particularly to a kind of passive Q-adjusted Yb:CaYAlO4Complete solid state pulse swashs
Light device.
Background technique
Laser diode pumping all-solid-state pulsed laser can not only export high pulse energy, high-peak power, bloom
The laser pulse of beam quality, and have compact-sized, high-efficient, the advantages that stability is good, is widely used in military, work
The fields such as industry, medical treatment and scientific research.Therefore, laser diode pumping all-solid-state pulsed laser becomes current Laser Study
One of hot spot.
Yb:CaYAlO4It is that one kind mixes Yb3+The novel laser crystal of ion not only has and mixes Yb3+Ionic material it is usual
Advantage: level structure is simple, without Excited-state Absorption, without concentration quenching, without cross relaxation, quantum efficiency is high, Excited state is low etc..
Moreover, Yb:CaYAlO4Also with the series of advantages of itself, such as: transmitted bandwidth is flat and wide, the fluorescence light of the polarization direction σ
It is wide up to 77nm to compose halfwidth, supports to generate the output that Fourier transform limited pulses width is 15 fs laser pulses；Thermal conductivity
The thermal conductivity in height, a axis and c-axis direction is respectively ka=3.6 Wm-1K-1And kc=3.2Wm-1K-1；Fluorescence lifetime is up to 426 μ
s；Etc. [Journal of the Optical Society of America B, 2011,28 (7): 1650-1654].These
Advantage is widely used it in laser field especially pulse laser field.For example, 2011,
Dongzhen Li et al. people has grown Yb:CaYAlO for the first time4Laser crystal and passive mode-locking is realized, obtains 156fs arteries and veins
Impulse light [Optics Letters, 2011,36 (2): 259-261]；In the same year, W.D.Tan et al. is in Yb:CaYAlO4Middle realization
Orphan's mode locking, obtains the pulse laser of 7.4ps, pulsewidth degree is compressed to 340fs [Optics through chamber external compression
Express,2011,19(19),18495-18500]；2015, FedericoPirzio et al. used single mode laser diode
Pumping is in Yb:CaYAlO4In also achieve passive mode-locking, and obtain 43fs pulse laser [Optics Express,
2015, 23(8):9790-9795]；2015, our seminars were in Yb:CaYAlO4Kerr lens mode locking is realized on crystal,
Obtain the pulse laser [Photonics Research, 2015,3 (6): 335-338] of 33fs；2016, Tang Dingyuan project
Group is from Yb:CaYAlO4Crystal obtains the laser pulse [Optics Letters, 2016,41 (5): 890-893] of 30 fs.
Above experimental result all proves Yb:CaYAlO4Crystal is that one kind may be implemented mode locking and generate pulse laser
Material, then, at present in Yb:CaYAlO4Laser crystal there is no the output for adjusting Q pulse laser.
Utility model content
Utility model aims to solve the problemss of the above-mentioned prior art, provide a kind of laser diode-pumped
The Yb:CaYAlO of semiconductor saturable absorber mirror Q-switched4Complete solid state pulse laser, it is intended to solve currently based on Yb:CaYAlO4Swash
Luminescent crystal there is no the output of adjusting Q pulse laser.
A kind of passive Q-adjusted Yb:CaYAlO4Complete solid state pulse laser, comprising: laser diode, the first cemented doublet,
Second cemented doublet, plane dichroic mirror, Yb:CaYAlO4Laser crystal, the first plano-concave mirror, flat output mirror, the second plano-concave
Mirror, semiconductor saturable absorbing mirror；
The laser diode provides excitation for exporting pumping laser for resonant cavity；
First cemented doublet, for receiving the pumping laser of laser diode transmitting, and the pumping that will transmit through swashs
Light collimation；
Second cemented doublet, for receiving the pumping laser for penetrating the first cemented doublet, the pumping that will transmit through
Laser focuses on Yb:CaYAlO4In laser crystal；
The plane dichroic mirror penetrates the pumping laser of the second cemented doublet, for receiving Yb for receiving:
CaYAlO4The gain laser that laser crystal generates, and by gain laser backtracking, flat-concave cavity knot is formed with the first plano-concave mirror
Structure；
The Yb:CaYAlO4Laser crystal forms laser gain for receiving the pumping laser for penetrating plane dichroic mirror；
The first plano-concave mirror, for receiving Yb:CaYAlO4The gain laser that laser crystal generates, coplanar dichroic mirror
Plano-concave cavity configuration is constituted, and gain laser is reflected on flat output mirror；
Flat output mirror, it is defeated by plane after the gain laser of the first flat reflection shielding film, gain laser starting of oscillation for receiving
The output Q-switched laser pulse of appearance；For gain laser to be reflected into the second plano-concave mirror；
Second plano-concave mirror, gain laser, focusing gain laser for the reflection of receiving plane outgoing mirror, and by the increasing of focusing
Beneficial laser reflection is to semiconductor saturable absorbing mirror；
Semiconductor saturable absorbing mirror, for receiving the gain laser of the second flat reflection shielding film, providing not laser pulse
With cavity loss, and by gain laser backtracking.
Further, passive Q-adjusted Yb:CaYAlO as described above4Complete solid state pulse laser, laser diode are optical fiber
Coupling output multimode laser diode, rated output power 27W, laser work wavelength are 976 ± 0.5nm, coupling output
Fibre diameter is 105 μm, numerical aperture 0.22.
Further, passive Q-adjusted Yb:CaYAlO as described above4Complete solid state pulse laser, the first cemented doublet
Two sides is plated with the saturating deielectric-coating of height to 976 ± 10nm wave band of laser, focal length 80mm.
Further, passive Q-adjusted Yb:CaYAlO as described above4Complete solid state pulse laser, the second cemented doublet
Two sides is plated with the saturating deielectric-coating of height to 976 ± 10nm wave band of laser, focal length 80mm.
Further, passive Q-adjusted Yb:CaYAlO as described above4Complete solid state pulse laser, Yb:CaYAlO4Laser is brilliant
The Yb of body3+The doping concentration of ion is 1.5at.%；Light passing sectional dimension is 3mm × 3mm, and light passing section is the throwing of optics magnitude
Light, light passing length are 2mm；It is disposed vertically and leans on hither plane dichroic mirror position, and be placed in the red copper of logical cooling water, the temperature of water
Degree control is 17 DEG C.
Further, passive Q-adjusted Yb:CaYAlO as described above4Complete solid state pulse laser, the one side of plane dichroic mirror
Be coated with the saturating deielectric-coating of height to 976 ± 10nm wave band of laser, be coated on one side to the height of 976 ± 10nm wave band of laser thoroughly deielectric-coating with
And the high inverse medium film of 1000nm-1100nm wave band of laser；Flat-concave cavity system is constituted with the first plano-concave mirror.
Further, passive Q-adjusted Yb:CaYAlO as described above4Complete solid state pulse laser, the concave surface of the first plano-concave mirror
Radius of curvature be 200mm, be coated with the high inverse medium film to 940nm-1100nm wave band of laser；The non-plated film of plane；Concave surface direction
In laser cavity, and flat-concave cavity system is constituted with pumping mirror.
Further, passive Q-adjusted Yb:CaYAlO as described above4Complete solid state pulse laser, flat output mirror direction swash
It is coated with the deielectric-coating that there is output coupling rate to 930nm-1140nm wave band of laser on one side in optical cavity, another side is coated with pair
The saturating deielectric-coating of height of 930nm-1140nm wave band of laser.
Further, passive Q-adjusted Yb:CaYAlO as described above4Complete solid state pulse laser, the concave surface of the second plano-concave mirror
Radius of curvature be 300mm, be coated with the high inverse medium film to 900nm-1100nm wave band of laser；The non-plated film of plane；Concave surface direction
In laser cavity.
Further, passive Q-adjusted Yb:CaYAlO as described above4Complete solid state pulse laser, semiconductor saturable absorption
The high inverse medium film that is on one side coated with to 1030nm-1100nm wave band of laser of the mirror surface to resonant cavity；Central wavelength is 1064nm.
Passive Q-adjusted Yb:CaYAlO provided by the utility model4Laser diode, first is arranged in complete solid state pulse laser
Cemented doublet, the second cemented doublet, plane dichroic mirror, Yb:CaYAlO4Laser crystal, the first plano-concave mirror, plane output
Mirror, the second plano-concave mirror, semiconductor saturable absorbing mirror；By coupling optical fiber, (optical fiber core diameter is 105 μm to laser diode, numerical value
Aperture is that 0.22) output pumping laser, the central wavelength of pumping laser are 976 ± 0.5nm, defeated from laser diode coupling optical fiber
Pumping laser out by the first cemented doublet, the second cemented doublet, plane dichroic mirror first collimate afterwards focus on Yb:
CaYAlO4On laser crystal, it is incident on plane dichroic mirror after gain laser starting of oscillation, and by plane dichroic mirror by its backtracking,
It reaches the first plano-concave mirror and is reflected on flat output mirror, a part of gain laser penetrates flat output mirror, a part of gain
Laser is reflected on the second plano-concave mirror by flat output mirror again, then is reflected into semiconductor saturable absorbing mirror by the second plano-concave mirror,
By semiconductor saturable absorbing mirror by its backtracking, i.e. gain laser is reflected into gain laser by semiconductor saturable absorbing mirror
Second plano-concave mirror, is re-reflected into flat output mirror, and a part of gain laser penetrates flat output mirror, a part of gain laser again by
Flat output mirror is re-reflected into the first plano-concave mirror, is re-reflected into plane dichroic mirror, constitutes closure optical path and forms laser generation, passes through
To the rational design and debugging in resonant cavity, acted in reasonable pump laser power and semiconductor saturable absorbing mirror
Under, stable adjusting Q pulse laser is formed, and two beam adjustable Q laser pulses are exported by outgoing mirror, so as to for being used as both-end
Pumping source, pump optical parametric oscillator or is used to test sample, a branch of and carry out detection laser, Huo Zheyong for a branch of
It is compared in the laser with return.
The adjustable Q laser pulse of the utility model output is with threshold value is low, repetition rate adjustable extent is wide, single pulse energy
High, the advantages that stability is good and beam quality is excellent, it can be widely applied to nonlinear optics, spectroscopy, biomedical diagnostic,
Material processing and other fields, have a good application prospect and commercial value.
Detailed description of the invention
Fig. 1 is the Yb of laser diode-pumped semiconductor saturable absorber mirror Q-switched provided by the embodiment of the utility model:
CaYAlO4The light path schematic diagram of complete solid state pulse laser；
Fig. 2 is the arteries and veins that the utility model embodiment is measured under different pump powers, different time scales using oscillograph
Rush sequence signal schematic diagram；
The pulse width signal measured when Fig. 3 is most short pulse width provided by the embodiment of the utility model using oscillograph
The spectral signal schematic diagram measured with spectrometer；
The repetition rate and pulse width that Fig. 4 is adjusting Q pulse laser provided by the embodiment of the utility model are with pump power
Variation relation；
The single pulse energy and pulse peak power that Fig. 5 is adjusting Q pulse laser provided by the embodiment of the utility model are with pump
Pu changed power relationship；
In figure: 1, laser diode；2, the first cemented doublet；3, the second cemented doublet；4, mirror is pumped；5,Yb:
CaYAlO4Laser crystal；6, the first plano-concave mirror；7, flat output mirror；8, the second plano-concave mirror；9, semiconductor saturable absorbing mirror.
Specific embodiment
To keep the purpose of this utility model, technical solution and advantage clearer, below technical side in the utility model
Case is clearly and completely described, it is clear that and the embodiments are a part of the embodiments of the present invention, rather than all
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, fall within the protection scope of the utility model.
As shown in Figure 1, the Yb of the laser diode-pumped semiconductor saturable absorber mirror Q-switched of the utility model embodiment:
CaYAlO4Complete solid state pulse laser is mainly by: laser diode 1, the first cemented doublet 2, the second cemented doublet 3, flat
Face dichroic mirror 4, Yb:CaYAlO4Laser crystal 5, the first plano-concave mirror 6, flat output mirror 7, the second plano-concave mirror 8, semiconductor can satisfy
It is formed with absorbing mirror 9；
In the embodiments of the present invention, laser diode 1 is used for for the semiconductor laser of fiber coupling output
Output pumping laser provides excitation for laser, and temperature control is 25 DEG C, and Output of laser wavelength is 976 ± 0.5nm, light core
Diameter is 105 μm, numerical aperture 0.22, maximum power output 27W；Fiber-optic output is placed on the first cemented doublet of distance
The position of 80mm；
First cemented doublet 2 receives the pumping laser of laser diode transmitting, and the pumping laser for will transmit through is quasi-
Directly, focal length 80mm, diameter are 2 inches；
Second cemented doublet 3 receives the pumping laser for penetrating the first cemented doublet, the pumping laser for will transmit through
Focus on Yb:CaYAlO4In laser crystal, focal length 80mm, diameter is 2 inches；
Plane dichroic mirror 4, for receiving and penetrating the pumping laser of the second cemented doublet；For receiving Yb:CaYAlO4
The gain laser that laser crystal generates, and by gain laser backtracking, for forming plano-concave cavity configuration with the first plano-concave mirror；
Yb:CaYAlO4Laser crystal 5 receives the pumping laser for penetrating plane dichroic mirror, is used to form laser gain；
First plano-concave mirror 6 receives Yb:CaYAlO4The gain laser that laser crystal generates is constituted for coplanar dichroic mirror
Plano-concave cavity configuration, and gain laser is reflected on flat output mirror；
Flat output mirror 7 receives the gain laser of the first flat reflection shielding film, for defeated by plane after gain laser starting of oscillation
The output Q-switched laser pulse of appearance, and gain laser is reflected on the second plano-concave mirror；
Second plano-concave mirror 8, the gain laser of receiving plane outgoing mirror reflection, is used for focusing gain laser, and by focusing
Gain laser is reflected into semiconductor saturable absorbing mirror；
Semiconductor saturable absorbing mirror 9 receives the gain laser of the second flat reflection shielding film, for providing not laser pulse
With cavity loss, and by gain laser backtracking.
Preferably, at 25 DEG C, the launch wavelength for exporting laser is 976 ± 0.5nm, coupling for the laser diode temperature control
Closing output optical fibre core diameter is 105 μm, numerical aperture 0.22, maximum power output 27W；
Specifically, pumping source output laser power is 27W, provides sufficiently high pump power, output Q-switched for subsequent raising
The power of laser is prepared；The wavelength (976 ± 0.5nm) and Yb:CaYAlO of pumping source transmitting laser4The absorbing wavelength of crystal
Match (near 979nm), to improve the efficiency of output laser；Due to the too small mould that will limit output laser of fibre diameter
Formula, therefore 105 μm of the utility model fibre diameter, for exporting multi-mode laser；Fiber numerical aperture is 0.22, and limitation output swashs
The angle of divergence of light, so that output laser is all incident on the first cemented doublet.
Preferably, the two sides of the first cemented doublet is plated with the saturating deielectric-coating of height to 976 ± 10nm wave band of laser, focal length
For 80mm, diameter is 2 inches；
The two sides of first cemented doublet is plated with the saturating deielectric-coating of height to 976 ± 10nm wave band of laser, sends out with pumping source
The wavelength for penetrating laser matches, so as to improve the effective rate of utilization of pumping source laser；Focal length is 80mm, and couples output light
Fine numerical aperture, is incident on pumping laser all on the first cemented doublet, to improve effective benefit of pumping source laser
With rate.
Preferably, the two sides of the second cemented doublet is plated with the saturating deielectric-coating of height to 976 ± 10nm wave band of laser, focal length
For 80mm, diameter is 2 inches.
Specifically, the two sides of the second cemented doublet is plated with the saturating deielectric-coating of height to 976 ± 10nm wave band of laser, with pump
The wavelength of Pu source transmitting laser matches, to improve the effective rate of utilization of pumping source laser；Focal length is 80mm, can make it
And have enough space holding plane dichroic mirrors among crystal.
Preferably, Yb:CaYAlO4The Yb of laser crystal3+The doping concentration of ion is 1.5at.%；Light passing sectional dimension is
3mm × 3mm, light passing section are the polishing of optics magnitude, and light passing length is 2mm；It is disposed vertically and leans on hither plane dichroic mirror position；And
It is placed in the red copper of logical cooling water, the temperature control of water is 17 DEG C；
Specifically, Yb:CaYAlO4The Yb of laser crystal3+If the doping concentration of ion is too small, pump power absorption efficiency
Too small, if concentration is too big, the thermal conductivity of laser crystal can decline, so suitable dopant concentration 1.5at.% is conducive to improve
Pump power absorption efficiency and crystal is made to keep high thermal conductivity；Light passing sectional dimension is 3mm × 3mm, has certain cut
Face size is conducive to experimental implementation and removes the heat of crystals；Light passing section is the polishing of optics magnitude, and pump can be improved
The absorption efficiency of Pu power；Light passing length is too short, and pump power absorption efficiency is too small, and light passing length is too long, since reabsorption is imitated
It answers, output power can be reduced, so suitable light passing length 2mm is conducive to improve pump power absorption efficiency；It is disposed vertically simultaneously
It by hither plane dichroic mirror position, and is placed in the red copper of logical cooling water, the temperature control of water is 17 DEG C, the hot coefficient of copper belt
Height, so being radiated with the red copper for being connected with cooling water, in addition cooling water should keep heat dissipation that cannot have condensed water in red copper again again,
So water temperature is set as 17 DEG C of water temperature.
Preferably, the saturating deielectric-coating of height of plane dichroic mirror being coated on one side to 976 ± 10nm wave band of laser, is coated with pair on one side
The high inverse medium film of the saturating deielectric-coating of the height of 976 ± 10nm wave band of laser and 1000nm-1100nm wave band of laser.
Specifically, the saturating deielectric-coating of height of plane dichroic mirror being coated on one side to 976 ± 10nm wave band of laser, sends out with pumping source
The wavelength for penetrating laser matches, so as to improve the effective rate of utilization of pumping source laser；It is coated on one side to 976 ± 10nm wave band
The saturating deielectric-coating of height of laser matches with the wavelength of pumping source transmitting laser, so as to improve effective benefit of pumping source laser
With rate；And the high inverse medium film of 1000nm-1100nm wave band of laser, the fluorescence spectrum model with Yb:CaYAlO4 laser crystal
Matching (the fluorescence spectra 950nm-1100nm of Yb:CaYAlO4 laser crystal) is enclosed, the laser for exporting 1051nm is conducive to.
Preferably, the concave surface of the first plano-concave mirror is coated with the high inverse medium film to 940nm-1100nm wave band of laser, and plane is not
Plated film, the radius of curvature of concave surface are 200mm；
Specifically, the radius of curvature of the concave surface of the first plano-concave mirror is 200mm, so as to ensure that pumping laser and gain swash
Size matching of the light in crystal；It is coated with the high inverse medium film to 940nm-1100nm wave band of laser, with Yb:CaYAlO4 laser
The fluorescence spectra of crystal matches (the fluorescence spectra 950nm-1100nm of Yb:CaYAlO4 laser crystal), is conducive to defeated
1051nm laser out.
Preferably, outgoing mirror is plane mirror, wherein swashing towards being coated in laser cavity on one side to 930nm-1140nm wave band
Light has the deielectric-coating (transmitance 0.6%) of output coupling rate, and another side is coated with the height to 930nm-1140nm wave band of laser
Saturating deielectric-coating.
Specifically, flat output mirror has defeated towards be coated on one side to 930nm-1140nm wave band of laser in laser cavity
The deielectric-coating of coupling efficiency out, another side are coated with the saturating deielectric-coating of height to 930nm-1140nm wave band of laser, cover Yb:
The fluorescence spectra (the fluorescence spectra 950nm-1100nm of Yb:CaYAlO4 laser crystal) of CaYAlO4 laser crystal,
Be conducive to export 1051nm laser.
Preferably, the concave surface of the second plano-concave mirror is coated with the high inverse medium film to 900nm-1100nm wave band of laser, and plane is not
Plated film, the radius of curvature of concave surface are 300mm；
Specifically, the radius of curvature of the concave surface of the second plano-concave mirror is 300mm, and gain laser is focused on semiconductor saturable
On absorbing mirror, it is ensured that the gain laser power density on semiconductor saturable absorbing mirror starts saturable absorption effect enough；Plating
There is the high inverse medium film to 900nm-1100nm wave band of laser, covers the fluorescence spectra of Yb:CaYAlO4 laser crystal
(the fluorescence spectra 950nm-1100nm of Yb:CaYAlO4 laser crystal) is conducive to export 1051nm laser.
Specifically, semiconductor saturable absorbing mirror be coated on one side to 1030nm-1100nm wave band of laser towards resonant cavity
High inverse medium film, central wavelength 1064nm, unsaturation loss be 0.3%, modulation depth 0.4%, be saturated energy-flux density
For 130 μ J/cm2, recovery time 1ps, damage threshold 3mJ/cm2, one is welded to a thickness of 450 μm having a size of 4mm × 4mm
On the copper sheet of inch.
Specifically, semiconductor saturable absorbing mirror be coated on one side to 1030nm-1100nm wave band of laser towards resonant cavity
High inverse medium film, (the fluorescence of Yb:CaYAlO4 laser crystal is matched with the fluorescence spectra of Yb:CaYAlO4 laser crystal
Spectral region 950nm-1100nm), be conducive to export 1051nm laser；Central wavelength is 1064nm, to 1064 ± 20nm model
Gain laser in enclosing has saturable absorption effect, it is possible to play saturable absorption to the laser of 1051nm, it can
To form adjustable Q laser pulse.
As shown in Figure 1, wherein the 976 ± 0.5nm pumping laser emitted from laser diode 1 is saturating through first pair of gluing
Mirror 2, the second cemented doublet 3, plane dichroic mirror 4 first collimate and focus on Yb:CaYAlO afterwards4On laser crystal 5,1048.6nm's
It is incident on plane dichroic mirror 4 after gain laser starting of oscillation, and its backtracking is reached into the first plano-concave mirror 6 simultaneously by plane dichroic mirror 4
It is reflected on flat output mirror 7, a part of gain laser penetrates flat output mirror 7, and a part of gain laser is defeated by plane again
Appearance 7 is reflected on the second plano-concave mirror 8, then is reflected into semiconductor saturable absorbing mirror 9 by the second plano-concave mirror 8, gain laser by
Its backtracking, i.e. gain laser are reflected into the second plano-concave by semiconductor saturable absorbing mirror 9 by semiconductor saturable absorbing mirror 9
Mirror 8 is re-reflected into flat output mirror 7, and a part of gain laser penetrates flat output mirror 7, and a part of gain laser is again by plane
Outgoing mirror 7 is re-reflected into the first plano-concave mirror 6, is re-reflected into plane dichroic mirror 4, constitutes closure optical path and forms laser generation, passes through
Flat output mirror 7 exports two beam adjustable Q laser pulses.
In the utility model embodiment, the power control Q-switch laser arteries and veins of pumping laser is exported by adjusting laser diode
The repetition rate of punching.
In the utility model embodiment, by adjusting the control of the distance between the second concave mirror and semiconductor saturable absorbing mirror
The waist radius of laser is 89.8 μm on semiconductor saturable absorbing mirror processed, to control laser on semiconductor saturable absorbing mirror
Energy-flux density, so that it is guaranteed that semiconductor saturable absorbing mirror works.
The Yb:CaYAlO4 complete solid state pulse of the laser diode-pumped semiconductor saturable absorber mirror Q-switched of the utility model
Laser helps the Threshold pumped power for reducing output Q-switched laser using the outgoing mirror of smaller transmissivity, so that wider again
Pump power within the scope of realize Q-switch laser, this help to realize repetition broad tuning adjustable Q laser pulse (adjustable Q laser pulse
Repetition bandwidth can increase with the raising of pump power)；In addition, it is intracavitary to help raising using the outgoing mirror of smaller transmissivity
Power density helps the stability for improving and adjusting Q laser pulse to a certain extent.Therefore, the utility model laser can be defeated
Stability is high out, threshold value is low, repetition broad tuning adjustable Q laser pulse.
As shown in Figure 2, wherein Fig. 2 (a) is (b) (c) Yb:CaYAlO respectively4Laser is 4.04W in pump power
When time range be respectively -500 μ s-500 μ s pulse sequence diagram, time range be -50 μ s-50 μ s pulse train
Scheme, in the pulse profile diagram that time range is -5.0 μ s-5.0 μ s；Fig. 2 (d) is (e) (f) to be respectively in pump power
In the pulse sequence diagram that time range is -500 μ s-500 μ s, in the pulse train that time range is -50 μ s-50 μ s when 6.10W
Scheme, in the pulse profile diagram that time range is -5.0 μ s-5.0 μ s；Fig. 2 (g) is (h) (i) to be respectively in pump power
When 7.76W the pulse train that time range is -500 μ s-500 μ s, the pulse sequence diagram that time range is -50 μ s-50 μ s,
In the pulse profile diagram that time range is -5.0 μ s-5.0 μ s.Since the corresponding pulse train of different pump powers is different, from
Fig. 2 can be seen that the pulse train under different time scales: the pulse train under -500-500 μ s scale illustrates Q impulse very
Stablize；Pulse train under -50-50 μ s scale illustrates Q impulse, and there is no multiple-pulse phenomenons；Single arteries and veins under -5-5 μ s scale
It rushes profile and illustrates Q impulse regular shape, stablized to further illustrate using the Q impulse of the utility model laser.
As shown in figure 3, wherein figure (a) be time range be -500 μ s-500 μ s pulse sequence diagram, figure (b) be when
Between range be -50 μ s-50 μ s pulse sequence diagram, Fig. 3 (c) be pulse profile, figure (d) be the corresponding curve of spectrum, according to
Measurement discovery, under the conditions of the pump power of 5.27W, the pulse width for obtaining Q-switch laser is most short, and the width of pulse is 1.17 μ
s.Also further illustrate that Q impulse is stablized from Fig. 3.
As shown in figure 4, provide adjusting Q pulse laser repetition rate and pulse width with pump power change curve,
As can be seen that the pulse width of adjusting Q pulse laser can be improved with the increase of pump power, pulse width can be with pumping function
The increase of rate first becomes smaller to become larger afterwards.
As shown in figure 5, the single pulse energy and pulse peak power that provide adjusting Q pulse laser are with pump power variation pass
System, it can be seen that single pulse energy tends to be steady afterwards as the increase of pump power first becomes larger, pulse peak power pump power
Increase first become larger and become smaller afterwards.
In conclusion Yb:CaYAlO provided by the utility model4Laser crystal can by laser diode-pumped semiconductor
Saturated absorption mirror tune Q is in Yb:CaYAlO4Laser crystal outputs stable laser pulse.When the effective output work of laser diode
When rate increases to 7.76W from 2.40W, steadily adjusting Q pulse laser may be implemented, output power increases to from 75.6mW
464mW, repetition rate increase to 123.4kHz from 41.3kHz, and pulse width changes within the scope of 1.17 μ s-1.83 μ s, simple venation
It rushes energy to change within the scope of 1.83 μ J-3.97 μ J, central wavelength is maintained near 1048.6nm；Wherein when laser diode
When effective output is 5.27W, it is 1.17 μ s that it is most short, which to obtain adjustable Q laser pulse width, at this time corresponding pulse recurrence frequency
For 73.67kHz, average output power 286mW, single pulse energy is 3.88 μ J.
Finally, it should be noted that above embodiments are only to illustrate the technical solution of the utility model, rather than its limitations；
Although the utility model is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that:
It is still possible to modify the technical solutions described in the foregoing embodiments, or part of technical characteristic is carried out etc.
With replacement；And these are modified or replaceed, various embodiments of the utility model technology that it does not separate the essence of the corresponding technical solution
The spirit and scope of scheme.
Claims (10)
1. a kind of passive Q-adjusted Yb:CaYAlO4Complete solid state pulse laser characterized by comprising laser diode (1), first
Cemented doublet (2), the second cemented doublet (3), plane dichroic mirror (4), Yb:CaYAlO4Laser crystal (5), the first plano-concave
Mirror (6), flat output mirror (7), the second plano-concave mirror (8), semiconductor saturable absorbing mirror (9)；
The laser diode (1) provides excitation for exporting pumping laser for resonant cavity；
First cemented doublet (2), for receiving the pumping laser of laser diode (1) transmitting, and the pumping that will transmit through
Laser alignment；
Second cemented doublet (3), for receiving the pumping laser through the first cemented doublet (2), the pump that will transmit through
Pu laser focuses on Yb:CaYAlO4In laser crystal (5)；
The plane dichroic mirror (4), for receiving the pumping laser through the second cemented doublet (3), for receiving Yb:
CaYAlO4The gain laser that laser crystal (5) generates, and by gain laser backtracking, plano-concave is formed with the first plano-concave mirror (6)
Cavity configuration；
The Yb:CaYAlO4Laser crystal (5) forms laser and increases for receiving the pumping laser through plane dichroic mirror (4)
Benefit；
The first plano-concave mirror (6), for receiving Yb:CaYAlO4The gain laser that laser crystal (5) generates, coplanar dichroic mirror
(4) plano-concave cavity configuration is constituted, and gain laser is reflected on flat output mirror (7)；
Flat output mirror (7), for receiving gain laser that the first plano-concave mirror (6) reflects, passing through plane after gain laser starting of oscillation
Outgoing mirror (7) output Q-switched laser pulse；For gain laser to be reflected into the second plano-concave mirror (8)；
Second plano-concave mirror (8), gain laser, focusing gain laser for receiving plane outgoing mirror (7) reflection, and by focusing
Gain laser is reflected into semiconductor saturable absorbing mirror (9)；
Semiconductor saturable absorbing mirror (9), for receiving the gain laser of the second plano-concave mirror (8) reflection, providing laser pulse
Different cavity losses, and by gain laser backtracking.
2. passive Q-adjusted Yb:CaYAlO as described in claim 14Complete solid state pulse laser, which is characterized in that laser diode
(1) multimode laser diode, rated output power 27W being exported for fiber coupling, laser work wavelength is 976 ± 0.5nm,
Coupling output optical fibre diameter is 105 μm, numerical aperture 0.22.
3. passive Q-adjusted Yb:CaYAlO as described in claim 14Complete solid state pulse laser, which is characterized in that first pair of gluing
The two sides of lens (2) is plated with the saturating deielectric-coating of height to 976 ± 10nm wave band of laser, focal length 80mm.
4. passive Q-adjusted Yb:CaYAlO as described in claim 14Complete solid state pulse laser, which is characterized in that second pair of gluing
The two sides of lens (3) is plated with the saturating deielectric-coating of height to 976 ± 10nm wave band of laser, focal length 80mm.
5. passive Q-adjusted Yb:CaYAlO as described in claim 14Complete solid state pulse laser, which is characterized in that Yb:CaYAlO4
The Yb of laser crystal (5)3+The doping concentration of ion is 1.5at.%；Light passing sectional dimension is 3mm × 3mm, and light passing section is light
Magnitude polishing is learned, light passing length is 2mm；It is disposed vertically and leans on hither plane dichroic mirror position, and be placed in the red copper of logical cooling water
On, the temperature control of water is 17 DEG C.
6. passive Q-adjusted Yb:CaYAlO as described in claim 14Complete solid state pulse laser, which is characterized in that plane dichroic mirror
(4) the saturating deielectric-coating of height being coated on one side to 976 ± 10nm wave band of laser, is coated with the height to 976 ± 10nm wave band of laser on one side
The high inverse medium film of saturating deielectric-coating and 1000nm-1100nm wave band of laser；Flat-concave cavity system is constituted with the first plano-concave mirror (6).
7. passive Q-adjusted Yb:CaYAlO as described in claim 14Complete solid state pulse laser, which is characterized in that the first plano-concave mirror
(6) radius of curvature of concave surface is 200mm, is coated with the high inverse medium film to 940nm-1100nm wave band of laser；The non-plated film of plane；
Concave surface constitutes flat-concave cavity system with pumping mirror towards in laser cavity.
8. passive Q-adjusted Yb:CaYAlO as described in claim 14Complete solid state pulse laser, which is characterized in that flat output mirror
(7) it is coated with the deielectric-coating that there is output coupling rate to 930nm-1140nm wave band of laser, another side on one side towards in laser cavity
It is coated with the saturating deielectric-coating of height to 930nm-1140nm wave band of laser.
9. passive Q-adjusted Yb:CaYAlO as described in claim 14Complete solid state pulse laser, which is characterized in that the second plano-concave mirror
(8) radius of curvature of concave surface is 300mm, is coated with the high inverse medium film to 900nm-1100nm wave band of laser；The non-plated film of plane；
Concave surface is towards in laser cavity.
10. passive Q-adjusted Yb:CaYAlO as described in claim 14Complete solid state pulse laser, which is characterized in that semiconductor can
The high inverse medium film that is on one side coated with to 1030nm-1100nm wave band of laser of the saturated absorption mirror surface to resonant cavity；Central wavelength is
1064nm。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108512025A (en) * | 2018-04-10 | 2018-09-07 | 西南大学 | A kind of passive Q-adjusted Yb:CaYAlO4Complete solid state pulse laser |
| CN108512025B (en) * | 2018-04-10 | 2024-05-14 | 西南大学 | Passive Q-switched Yb CaYAlO4All-solid-state pulse laser |
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