CN208208304U - Self-luminous current mode pixel unit circuit suitable for common-anode - Google Patents
Self-luminous current mode pixel unit circuit suitable for common-anode Download PDFInfo
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- CN208208304U CN208208304U CN201820808095.3U CN201820808095U CN208208304U CN 208208304 U CN208208304 U CN 208208304U CN 201820808095 U CN201820808095 U CN 201820808095U CN 208208304 U CN208208304 U CN 208208304U
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Abstract
The utility model discloses a kind of self-luminous current mode pixel unit circuits suitable for common-anode, it is characterised in that it includes: anode supply line VDDH, the luminescent device of the first transistor M1, second transistor M2, third transistor M3, the 4th transistor M4, sampling holding capacitor C1, data signal line IDATA, switch control signal line SMP_HLD, the first input voltage signal line V1 and the second input voltage signal line V2, ground wire GND, luminescent device.The novel common-anode current mode pixel unit drive circuit that this patent proposes, cathode construction is compared together, it does not need negative supply voltage, while current mode drive structure solves pixel array driving tube performance difference as caused by process deviation, and then improves the display consistency of whole display.In addition, this pixel circuit carries over-voltage protecting function, the grid oxygen breakdown problem of sample phase transistor can be effectively avoided.
Description
Technical field
The picture of pixel unit circuit more particularly to OLED/LED the micro display driving shown the utility model relates to self-luminous
Plain element circuit.
Background technique
In recent years as ((Virtual Reality virtually shows AR (Augmented Reality, augmented reality)/VR
The development of technology, the micro display technology being closely related therewith have also obtained extensive concern in fact).Micro display (Microdisplay)
Technology is a branch of field of display technology, and display Diagonal Dimension less than 1 inch (2.54cm) or is generally referred to that
It is a little small to needing the display of optical amplifier to be known as micro-display.Micro display technology common at present has OLEDoS (Organic
Light-Emitting Diode on Silicon, silicon-based organic light-emitting), LEDoS (Light Emitting Diode on
Silicon, silicon-based diode shine), LCoS (Liquid Crystal on Silicon, liquid crystal on silicon) and DMD (Digital
Micro mirror Device, Digital Micromirror Device) four kinds, wherein OLEDoS and LEDoS, which is belonged to, actively shines, and LCoS
Then belong to passive shine with DMD；Meanwhile OLEDoS and LEDoS also have the excellent of low-power consumption, high contrast and quick response
Point, therefore they are more suitably applied in AR and VR technology.
OLEDoS and LEDoS micro-display utilizes amorphous silicon, microcrystal silicon or low temperature polysilicon process different from conventional,
It is using silicon single crystal wafer as substrate, that is to say, that it can use the integrated circuit CMOS (Complementary of existing maturation
Metal-Oxide-Semiconductor, complementary metal oxide semiconductor) technique, therefore display screen not only may be implemented in it
The active matrix addressed various functions such as scan chain circuits, D/A conversion circuit, band-gap reference that also may be implemented of pixel
Drive control circuit increases reliability to greatly reduce the aerial lug of device, realizes lightweight.
The pixel unit circuit of OLEDoS and LEDoS is that each pixel size of current is realized in micro-display array of display
The levels of precision of the circuit of control, each pixel current control directly affects the display consistency of entire micro-display；And it is current
Traditional voltage-type pixel unit circuit will lead between pixel and pixel driving tube parameter not due to the deviation of manufacturing process
Unanimously, and then the electric current between each pixel unit is caused to have a certain difference.Simultaneously as the cut-in voltage of OLED device
Generally all in 2V or 3V or more, and the supply voltage of normal CMOS technology is up to 3.3V or so, thus inevitably
Negative voltage is used, therefore, the design of pixel unit circuit is also required to consider the problems of overvoltage protection.In addition, the picture of different structure
Plain element circuit will affect the design of whole drive scheme, and thus the reasonability of pixel unit circuit design just seems heavy to closing
It wants.
Existing pixel cell capacitance is as shown in Figure 1, its pixel unit circuit for belonging to voltage-type, by most basic 2T1C
(2 transistors, 1 capacitor) is constituted.Its basic working principle is:
(1) data write phase: when WR is high level, M2 pipe conducting, the voltage signal VDATA of input is written to
On the grid and capacitor C1 of M1 pipe；
(2) light emitting phase: WR becomes low level, and the shutdown of M2 pipe is stored to the data voltage driving M1 pipe generation pair on C1
The driving current answered drives a current through OLED or LED component and shines, luminous brightness size and write-in data voltage phase
It is corresponding.
Prior art there are the problem of:
Since the resolution ratio of micro-display is generally 800 × 600 or above (1280 × 1024 is even higher), picture
The quantity of plain element circuit has reached hundreds of thousands even million ranks.And existing CMOS technology due to that can deposit in the fabrication process
Threshold voltage, gate oxide thickness or the other parameters meeting of M1 pipe in certain process deviation, different pixel unit circuits
There are certain differences.Therefore, each driving tube (M1) exists when converting input voltage into output electric current in pixel array
Certain difference, and then will affect the consistency of display.
In addition, luminescent device designs in the pixel circuit of Fig. 1 for common cathode, it is not suitable for the device drive of common-anode.
Utility model content
Display consistency existing for the common cathode voltage-type pixel unit circuit used for existing self-luminous micro-display
Problem provides a kind of novel common-anode current mode pixel unit circuit structure.
The utility model discloses a kind of self-luminous current mode pixel unit circuit suitable for common-anode first, it is wrapped
It includes: the first transistor M1, second transistor M2, third transistor M3, the 4th transistor M4, sampling holding capacitor C1, data letter
Number line IDATA, switch control signal line SMP_HLD, the first input voltage signal line V1 and the second input voltage signal line V2,
Anode supply line VDDH, the luminescent device of line GND, luminescent device,
The anode of the luminescent device is connected with power supply line VDDH；
The cathode of the luminescent device is connected with the source electrode of the 4th transistor M4；
The switch control signal line SMP_HLD is separately connected the grid of the grid of second transistor M2, third transistor M3
Pole, the 4th transistor M4 grid；
The data signal line IDATA is separately connected the source electrode of the source electrode of second transistor M2, third transistor M3；
The ground wire GND, the first input voltage signal line V1 or the second input voltage signal line V2 are in sampling holding capacitor
The bottom crown of C1 switches, and the top crown of sampling holding capacitor C1 is separately connected the grid of the first transistor M1, second transistor M2
Drain electrode；
The drain electrode of the first transistor M1, the drain electrode of third transistor M3, the 4th transistor M4 drain electrode mutual connection；
The source electrode of the first transistor M1 connects ground wire GND；
Second input voltage signal line V2 voltage value > the first input voltage signal line V1 voltage value.
Preferably, the luminescent device is OLED or LED.
Preferably, the luminescent device is common-anode structure, and cathode construction is compared together, does not need negative supply voltage.
Preferably, the first transistor M1, second transistor M2 and third transistor M3 are NMOS tube, the 4th transistor M4
For PMOS tube.
The invention also discloses a kind of production methods of driving current, are suitable for the spontaneous of common-anode based on described
Photoelectricity flow pattern pixel unit circuit, including two operating modes: high current operating mode and low current operating mode, high current work
Under operation mode, the bottom crown of sampling holding capacitor C1 is directly connect with ground wire GND；Under low current operating mode, sampling keeps electricity
Hold C1 bottom crown different working stages respectively with the first input voltage signal line V1 or the second input voltage signal line V2
Connection.
Specifically, the high current operating mode includes:
(1) data sampling stage, switch control signal line SMP_HLD are in high level, and second transistor M2 and third are brilliant
Body pipe M3 conducting, the 4th transistor M4 cut-off, luminescent device are in non-light emitting state；The grid of the first transistor M1 and at this time
The drain electrode of three transistor M3 is shorted together, and the first transistor M1 constitutes the type of attachment of a diode；At the same time, first
The electric current of transistor M1 flows through second transistor M2 and third transistor M3, the input electricity of the electric current and data signal line IDATA
Stream is consistent；The electric current of final data signal wire IDATA is converted into the upper pole that voltage signal VDATA is stored in sampling holding capacitor C1
Plate, that is, the first transistor M1 grid；The bottom crown of sampling holding capacitor C1 is connect with ground wire GND；
(2) light emitting phase, switch control signal line SMP_HLD are in low level, second transistor M2 and third transistor
M3 cut-off, the 4th transistor M4 conducting are maintained at the voltage VDATA driving the first transistor of the bottom crown of sampling holding capacitor C1
M1 generates driving current and flows through the 4th transistor M4, luminescent device, and luminescent device shines；Sample the bottom crown of holding capacitor C1
Holding is connect with ground wire GND.
Specifically, the low current operating mode includes:
(1) data sampling stage, switch control signal line SMP_HLD are in high level, and second transistor M2 and third are brilliant
Body pipe M3 conducting, the 4th transistor M4 cut-off, luminescent device are in non-light emitting state；The grid of the first transistor M1 and at this time
The drain electrode of three transistor M3 is shorted together, and the first transistor M1 constitutes the type of attachment of a diode；At the same time, first
The electric current of transistor M1 flows through second transistor M2 and third transistor M3, the input electricity of the electric current and data signal line IDATA
Stream is consistent；The electric current of final data signal wire IDATA is converted into the upper pole that voltage signal VDATA is stored in sampling holding capacitor C1
Plate, that is, the first transistor M1 grid；The bottom crown holding of sampling holding capacitor C1 is connect with the first input voltage signal line V1；
(2) light emitting phase, switch control signal line SMP_HLD are in low level, second transistor M2 and third transistor
M3 cut-off, the 4th transistor M4 conducting are believed the connection signal line for sampling the top crown of holding capacitor C1 by the first input voltage
Number line V1 is switched to the second input voltage signal line V2；The top crown for sampling holding capacitor C1 at this time is in vacant state, therefore adopts
The voltage signal VDATA variation of the top crown of sample holding capacitor C1 is VDATA+ (V2-V1), which drives first crystal
Pipe M1 generates corresponding driving current and flows through the 4th transistor M4, luminescent device, and luminescent device shines；During this, first
The source voltage GND of transistor M1 is constant, and the grid voltage VDATA+ (V2-V1) of the first transistor M1 increases, therefore first crystal
The gate-source voltage difference of pipe M1 reduces, and then the corresponding reduction of driving current of the first transistor M1, to realize low current
Driving.
The invention also discloses the display methods of a kind of image or video, based on described in high current operating mode
The production method of driving current is updated in the display data that the alternate run of two working stages completes a frame frame, and then is completed
The display of image or video.
The invention also discloses the display methods of a kind of image or video, based on described in low current operating mode
The production method of driving current is updated in the display data that the alternate run of two working stages completes a frame frame, and then is completed
The display of image or video.
The beneficial effects of the utility model
The novel common-anode current mode pixel unit drive circuit that this patent proposes, cathode construction is compared together, is not required to
Want negative supply voltage, while to solve pixel array driving tube performance as caused by process deviation poor for current mode drive structure
It is different, and then improve the display consistency of whole display.In addition, this pixel circuit carries over-voltage protecting function, can effectively avoid
The grid oxygen breakdown problem of sample phase transistor.
Detailed description of the invention
Fig. 1 is conventional voltage type pixel unit circuit
Fig. 2 is the current mode pixel unit circuit of the utility model
Fig. 3 is the sample phase under the current mode pixel unit circuit high current mode of the utility model
Fig. 4 is the light emitting phase under the current mode pixel unit circuit high current mode of the utility model
Fig. 5 is the sample phase under the current mode pixel unit circuit low current mode of the utility model
Fig. 6 is the light emitting phase under the current mode pixel unit circuit low current mode of the utility model
Fig. 7 is the current mode pixel unit circuit of the utility model in sample phase overvoltage protection schematic diagram
Fig. 8 is the current mode pixel unit circuit working timing figure of the utility model
Specific embodiment
Below with reference to embodiment, the utility model is described in further detail, but the protection scope of the utility model is not limited to
This:
In conjunction with Fig. 2, suitable for the self-luminous current mode pixel unit circuit of common-anode, it includes: the first transistor M1,
Two-transistor M2, third transistor M3, the 4th transistor M4, sampling holding capacitor C1, data signal line IDATA, switch control
Signal wire SMP_HLD, the first input voltage signal line V1 and the second input voltage signal line V2, ground wire GND, luminescent device sun
Pole power supply line VDDH, luminescent device,
The anode of the luminescent device is connected with power supply line VDDH；
The cathode of the luminescent device is connected with the source electrode of the 4th transistor M4；
The switch control signal line SMP_HLD is separately connected the grid of the grid of second transistor M2, third transistor M3
Pole, the 4th transistor M4 grid；
The data signal line IDATA is separately connected the source electrode of the source electrode of second transistor M2, third transistor M3；
The ground wire GND, the first input voltage signal line V1 or the second input voltage signal line V2 are in sampling holding capacitor
The bottom crown of C1 switches, and the top crown of sampling holding capacitor C1 is separately connected the grid of the first transistor M1, second transistor M2
Drain electrode；
The drain electrode of the first transistor M1, the drain electrode of third transistor M3, the 4th transistor M4 drain electrode mutual connection；
The source electrode of the first transistor M1 connects ground wire GND；
Second input voltage signal line V2 voltage value > the first input voltage signal line V1 voltage value.
Wherein: the luminescent device can be OLED or LED, and the luminescent device is common-anode structure, with common cathode knot
Structure is compared, and negative supply voltage is not needed.The first transistor M1, second transistor M2 and third transistor M3 are NMOS tube, the
Four transistor M4 are PMOS tube.
A kind of production method of driving current, based on the self-luminous current mode pixel unit electricity suitable for common-anode
Road, including two operating modes: high current operating mode and low current operating mode, under high current operating mode, sampling is kept
The bottom crown of capacitor C1 is directly connect with ground wire GND；Under low current operating mode, the bottom crown of holding capacitor C1 is sampled in difference
Working stage connect respectively with the first input voltage signal line V1 or the second input voltage signal line V2.
Specifically, the high current operating mode includes:
(1) the data sampling stage is in high level, second transistor M2 in conjunction with Fig. 3, switch control signal line SMP_HLD
It is connected with third transistor M3, the 4th transistor M4 cut-off, luminescent device is in non-light emitting state；The first transistor M1 at this time
The drain electrode of grid and third transistor M3 is shorted together, and the first transistor M1 constitutes the type of attachment of a diode；With this
Meanwhile the electric current of the first transistor M1 flows through second transistor M2 and third transistor M3, the electric current and data signal line IDATA
Input current it is consistent；The electric current of final data signal wire IDATA is converted into voltage signal VDATA and is stored in sampling holding capacitor
The top crown of C1, that is, the first transistor M1 grid；The bottom crown of sampling holding capacitor C1 is connect with ground wire GND；
(2) light emitting phase is in low level, second transistor M2 and in conjunction with Fig. 4, switch control signal line SMP_HLD
Three transistor M3 cut-off, the 4th transistor M4 conducting are maintained at the voltage VDATA driving the of the bottom crown of sampling holding capacitor C1
One transistor M1 generates driving current and flows through the 4th transistor M4, luminescent device, and luminescent device shines；Sample holding capacitor C1
Bottom crown holding connect with ground wire GND.
Specifically, the low current operating mode includes:
(1) the data sampling stage is in high level, second transistor M2 in conjunction with Fig. 5, switch control signal line SMP_HLD
It is connected with third transistor M3, the 4th transistor M4 cut-off, luminescent device is in non-light emitting state；The first transistor M1 at this time
The drain electrode of grid and third transistor M3 is shorted together, and the first transistor M1 constitutes the type of attachment of a diode；With this
Meanwhile the electric current of the first transistor M1 flows through second transistor M2 and third transistor M3, the electric current and data signal line IDATA
Input current it is consistent；The electric current of final data signal wire IDATA is converted into voltage signal VDATA and is stored in sampling holding capacitor
The top crown of C1, that is, the first transistor M1 grid；The bottom crown for sampling holding capacitor C1 is kept and the first input voltage signal line
V1 connection；
(2) light emitting phase is in low level, second transistor M2 and in conjunction with Fig. 6, switch control signal line SMP_HLD
Three transistor M3 cut-off, the 4th transistor M4 conducting, the connection signal line that will sample the top crown of holding capacitor C1 are defeated by first
Enter voltage signal line V1 and is switched to the second input voltage signal line V2；The top crown for sampling holding capacitor C1 at this time is in hanging shape
State, therefore the voltage signal VDATA variation for sampling the top crown of holding capacitor C1 is VDATA+ (V2-V1), voltage signal driving
The first transistor M1 generates corresponding driving current and flows through the 4th transistor M4, luminescent device, and luminescent device shines；This process
In, the source voltage GND of the first transistor M1 is constant, and the grid voltage VDATA+ (V2-V1) of the first transistor M1 increases, therefore the
The gate-source voltage difference of one transistor M1 reduces, and then the corresponding reduction of driving current of the first transistor M1, to realize small
The driving of electric current.
Above-mentioned drive scheme is current signal when transmitting data-signal into pixel unit circuit, and first is brilliant
The data voltage of body pipe M1 grid end is to be generated by the electric current of input, therefore it is not influenced by transistor parameter variation；In addition,
What it is due to input is current signal, and the ability of its anti-noise jamming is stronger for voltage signal, therefore can improve display
The whole display effect of device.
Further, since the 4th metal-oxide-semiconductor M4 is PMOS tube, and when the cathode voltage of the device of OLED/LED is higher, such as Fig. 7
Shown, parasitic diode is connected between the substrate (typically connecing high level) and the cathode of luminescent device of the 4th metal-oxide-semiconductor M4, will
The voltage of cathode is drawn to a lower level, to avoid larger there are one between the grid and source electrode of the 4th metal-oxide-semiconductor M4
Pressure difference.Therefore, the also included over-voltage protecting function of this circuit.
The invention also discloses the display methods of a kind of image or video, based on described in high current operating mode
The production method of driving current is updated in conjunction with Fig. 8 in the display data that the alternate run of two working stages completes a frame frame,
And then complete the display of image or video.
The invention also discloses the display methods of a kind of image or video, based on described in low current operating mode
The production method of driving current is updated in conjunction with Fig. 8 in the display data that the alternate run of two working stages completes a frame frame,
And then complete the display of image or video.
Specific embodiment described herein is only to illustrate to the spirit of the present invention.The utility model institute
Belonging to those skilled in the art can make various modifications or additions to the described embodiments or using similar
Mode substitute, but without departing from the spirit of the present application or beyond the scope of the appended claims.
Claims (4)
1. a kind of self-luminous current mode pixel unit circuit suitable for common-anode, it is characterised in that it includes: the first transistor
M1, second transistor M2, third transistor M3, the 4th transistor M4, sampling holding capacitor C1, data signal line IDATA, switch
Control signal wire SMP_HLD, the first input voltage signal line V1 and the second input voltage signal line V2, ground wire GND, luminescent device
Anode supply line VDDH, luminescent device,
The anode of the luminescent device is connected with power supply line VDDH；
The cathode of the luminescent device is connected with the source electrode of the 4th transistor M4；
The switch control signal line SMP_HLD is separately connected the grid of second transistor M2, the grid of third transistor M3,
The grid of four transistor M4；
The data signal line IDATA is separately connected the source electrode of the source electrode of second transistor M2, third transistor M3；
The ground wire GND, the first input voltage signal line V1 or the second input voltage signal line V2 are sampling holding capacitor C1's
The top crown of bottom crown switching, sampling holding capacitor C1 is separately connected the leakage of the grid of the first transistor M1, second transistor M2
Pole；
The drain electrode of the first transistor M1, the drain electrode of third transistor M3, the 4th transistor M4 drain electrode mutual connection；
The source electrode of the first transistor M1 connects ground wire GND；
Second input voltage signal line V2 voltage value > the first input voltage signal line V1 voltage value.
2. circuit according to claim 1, it is characterised in that the luminescent device is OLED or LED.
3. circuit according to claim 1, it is characterised in that the luminescent device is common-anode structure.
4. circuit according to claim 1, it is characterised in that the first transistor M1, second transistor M2 and third transistor
M3 is NMOS tube, and the 4th transistor M4 is PMOS tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820808095.3U CN208208304U (en) | 2018-05-25 | 2018-05-25 | Self-luminous current mode pixel unit circuit suitable for common-anode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820808095.3U CN208208304U (en) | 2018-05-25 | 2018-05-25 | Self-luminous current mode pixel unit circuit suitable for common-anode |
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| CN208208304U true CN208208304U (en) | 2018-12-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447447A (en) * | 2018-05-25 | 2018-08-24 | 南京微芯华谱信息科技有限公司 | Suitable for the self-luminous current mode pixel unit circuit of common-anode, the production method of driving current |
-
2018
- 2018-05-25 CN CN201820808095.3U patent/CN208208304U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447447A (en) * | 2018-05-25 | 2018-08-24 | 南京微芯华谱信息科技有限公司 | Suitable for the self-luminous current mode pixel unit circuit of common-anode, the production method of driving current |
| CN108447447B (en) * | 2018-05-25 | 2023-08-08 | 南京微芯华谱信息科技有限公司 | Self-luminous current type pixel unit circuit suitable for common anode and driving current generation method |
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