CN208045202U - A kind of high temperature film platinum resistance based on sapphire substrate - Google Patents
A kind of high temperature film platinum resistance based on sapphire substrate Download PDFInfo
- Publication number
- CN208045202U CN208045202U CN201820303421.5U CN201820303421U CN208045202U CN 208045202 U CN208045202 U CN 208045202U CN 201820303421 U CN201820303421 U CN 201820303421U CN 208045202 U CN208045202 U CN 208045202U
- Authority
- CN
- China
- Prior art keywords
- sapphire substrate
- platinum
- high temperature
- sapphire
- platinum wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 178
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 100
- 239000010980 sapphire Substances 0.000 title claims abstract description 100
- 239000000758 substrate Substances 0.000 title claims abstract description 88
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 67
- 239000002002 slurry Substances 0.000 claims abstract description 25
- 238000009413 insulation Methods 0.000 claims abstract description 21
- 238000005245 sintering Methods 0.000 claims description 8
- 238000009529 body temperature measurement Methods 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 8
- 238000001514 detection method Methods 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 241001062009 Indigofera Species 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010979 ruby Substances 0.000 description 2
- 229910001750 ruby Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
The utility model is related to temperature detection technical field more particularly to a kind of high temperature film platinum resistance based on sapphire substrate, including：Sapphire substrate, and two platinum wires being connect respectively with the two poles of the earth of sapphire substrate；It wherein connects and is coated with Special high-temperature insulation slurry on the sapphire substrate after platinum wire；Two platinum wire parts are connect with sapphire substrate and platinum wire another part stretches out sapphire substrate setting.Response time and the impact resistance of film platinum resistor, increased thermal conductivity, dielectric strength and wearability can be improved in the sapphire substrate of the utility model.
Description
Technical field
The utility model is related to temperature detection technical field more particularly to a kind of high temperature film platinum based on sapphire substrate
Resistance.
Background technology
The temperature-measurement principle of platinum resistance is that the resistance value of metal platinum varies with temperature into positive temperature coefficient and changes, and measures certain for the moment
The resistance value at quarter can be obtained corresponding temperature value.The platinum resistive element being commonly used is film platinum resistor, is suitable for surveying
Measure surface temperature.Present film platinum resistor is using aluminium oxide ceramics as substrate, and thermal response is slower, vibration resistance, impact resistance
Difference, it is yielding.
Utility model content
The purpose of this utility model is to provide a kind of high temperature film platinum resistance based on sapphire substrate, thin to solve to improve
The technical issues of response time of film platinum resistance and impact resistance, increased thermal conductivity, dielectric strength and wearability.
What the high temperature film platinum resistance based on sapphire substrate of the utility model was realized in：
A kind of high temperature film platinum resistance based on sapphire substrate, including：Sapphire substrate, and it is precious with the indigo plant respectively
Two platinum wires of the two poles of the earth connection of ground mass plate；Wherein connect that be coated with Special high-temperature on the sapphire substrate after the platinum wire exhausted
Edge is starched；Two platinum wire parts connect connection with the sapphire substrate and described platinum wire another part stretches out institute
State sapphire substrate setting.
Further, it is provided with temperature measurement circuit on the sapphire substrate.
Further, the platinum wire is using the reinforced platinum wire of chemistry.
Further, the reinforced platinum wire of chemistry is put down gently by dipping the reinforced platinum slurry of microchemistry to described blue precious
It is fixed after drying in the shade on the two poles of the earth of ground mass plate.
Further, the platinum wire after the reinforced platinum slurry of microchemistry is dipped to burn by high temperature with sapphire substrate
Knot.
Further, the two poles of the earth of two platinum wires and sapphire substrate after high temperature sintering are welded to connect.
Further, the platinum wire coats institute after being welded in described sapphire substrate the two poles of the earth on the sapphire substrate
State Special high-temperature insulation slurry；The Special high-temperature insulation slurry is also coated on the platinum wire being connect with the sapphire substrate.
Further, the Special high-temperature insulation slurry is fixed on the process for sapphire-based plate surface by high temperature sintering, is formed
One protective film.
Further, the sapphire substrate uses sapphire for raw material, thermal conductivity coefficient about 45W/m.K, coefficient of thermal expansion
About 5.0 × 10-6 DEG C, mohs hardness 9.
Further, the high temperature film platinum resistance based on sapphire substrate is the film platinum electricity of 1000 °C of high temperature resistant
Resistance.
The beneficial effects of the utility model are：The high temperature film platinum resistance based on sapphire substrate of the utility model, is adopted
Use sapphire as substrate, since sapphire coefficient of thermal expansion is small, high temperature resistant, deformation is small, and hardness is big, improves film platinum electricity
Thermal conductivity, response time, impact resistance and the wearability of resistance, and enhance the dielectric strength of film platinum resistor.
Further, Special high-temperature insulation slurry forms layer protective layer on film platinum resistor surface, and not only protection is set to indigo plant
Temperature measurement circuit on jewel substrate, and protect the platinum wire being welded on sapphire substrate.
Description of the drawings
The utility model is further illustrated with reference to the accompanying drawings and examples.
Fig. 1 is the Facad structure figure of the embodiments of the present invention 1；
Fig. 2 is the construction profile of the embodiments of the present invention 1.
In figure：Sapphire substrate 100, platinum wire 200, Special high-temperature insulation slurry 300.
Specific implementation mode
To keep the purpose, technical scheme and advantage of the utility model embodiment clearer, below in conjunction with this practicality
The technical solution in the utility model embodiment is clearly and completely described in attached drawing in novel embodiment, shows
So, described embodiment is a part of embodiment of the utility model, rather than whole embodiments.Based on this practicality
Embodiment in novel, those of ordinary skill in the art are obtained every other without creative efforts
Embodiment shall fall within the protection scope of the present invention.
Therefore, the detailed description of the embodiment of the utility model provided in the accompanying drawings is not intended to limit below and is wanted
The scope of the utility model of protection is sought, but is merely representative of the selected embodiment of the utility model.Based on the utility model
In embodiment, the every other implementation that those of ordinary skill in the art are obtained without creative efforts
Mode shall fall within the protection scope of the present invention.
Embodiment 1：
As depicted in figs. 1 and 2, the utility model provides a kind of high temperature film platinum resistance based on sapphire substrate 100,
Including：Sapphire substrate 100, and two platinum wires 200 being connect respectively with the two poles of the earth of sapphire substrate 100；Wherein connect
Special high-temperature insulation slurry 300 is coated on sapphire substrate 100 after platinum wire 200, high-temperature insulation slurry 300 is coated on process for sapphire-based
On the end face that plate 100 connects with platinum wire 200；Two 200 parts of platinum wire connect connection and platinum with sapphire substrate 100
200 another part of spun gold stretches out sapphire substrate 100 and is arranged.
Specifically, being provided with temperature measurement circuit on sapphire substrate 100.It is contacted with thermometric object by platinum wire 200, platinum
For silk 200 according to temperature change resistance change, temperature measurement circuit measures corresponding temperature.
Preferably, platinum wire 200 is using chemical reinforced platinum wire 200.Film platinum resistor is using metal platinum in temperature
The characteristic that self-resistance value also changes correspondingly when variation carrys out measuring temperature, and display instrument will indicate the resistance value of platinum resistance
Corresponding temperature value.When, there are when temperature gradient, measured temperature is situated between in temperature-sensing element location in measured medium
Mean temperature in matter layer.
Film platinum resistor has deviation minimum, and electric property is stablized；Vibration resistance, reliability are high, while having accurate spirit
It is quick, stability is good, life of product is long and it is easy for installation the advantages that.
Preferably, chemical reinforced platinum wire 200 is put down gently by dipping the reinforced platinum slurry of microchemistry to sapphire substrate
It is fixed after drying in the shade on 100 the two poles of the earth.
It dips the platinum wire 200 after the reinforced platinum slurry of microchemistry and passes through high temperature sintering with sapphire substrate 100.
The two poles of the earth of two platinum wires 200 and sapphire substrate 100 after high temperature sintering are welded to connect.
Preferably, refering to what is shown in Fig. 2, platinum wire 200 is welded in behind 100 the two poles of the earth of sapphire substrate in sapphire substrate 100
Upper coated by special high-temperature insulation slurry 300；I.e.
Special high-temperature insulation slurry 300 is also coated on the platinum wire 200 being connect with sapphire substrate 100.
Special high-temperature insulation slurry 300 is fixed on 100 surface of sapphire substrate by high temperature sintering, forms a protective film.No
Only protection is set to the temperature measurement circuit on sapphire substrate 100, and protects the platinum wire being welded on sapphire substrate 100
200。
Preferred sapphire substrate 100 uses sapphire for raw material, thermal conductivity coefficient about 45W/m.K, and coefficient of thermal expansion is about
5.0×10-6DEG C, mohs hardness 9.Using sapphire as substrate, since sapphire thermal conductivity is high, the binding force with PT layers is good,
Coefficient of thermal expansion is small, and high temperature resistant, deformation is small, and hardness is big, improves thermal conductivity, response time, the impact resistance of film platinum resistor
And wearability, and enhance the dielectric strength of film platinum resistor.Sapphire (Sapphire) is that ruby is removed in sapphire
(Ruby) except, the common name of other color sapphires, main component is aluminium oxide（Al2O3）.
Wherein, sapphire has high thermal conductivity coefficient (about 45W/m.K) and low coefficient of thermal expansion (5.0 × 10-6DEG C),
Sapphire surface is especially hard, mohs hardness 9, other than diamond, can be produced on its surface almost without what other substance
Raw cut.It also has good translucency, electric insulating quality and heat conductivity, good mechanical property, and has wear-resisting and anti-
The characteristics of wind erosion.Compared to the thermal conductivity coefficient (about 20W/m.K) and coefficient of thermal expansion (7.2 × 10 of aluminium oxide ceramics-6DEG C), sapphire
With higher heat conductivility, dielectric strength, wearability, aluminium oxide ceramics can be replaced to come with this as film platinum resistor substrate
Improve response time and the impact resistance of film platinum resistor.
High temperature film platinum resistance based on sapphire substrate 100 is the film platinum resistor of 1000 °C of high temperature resistant.
The making step of the high temperature film platinum resistance based on sapphire substrate 100 of the utility model is：
Step 1：The reinforced platinum wire 200 of two chemistry is taken, dips the reinforced platinum slurry of micro chemistry respectively；
Step 2：The chemical reinforced platinum wire 200 for dipping the reinforced platinum slurry of chemistry is put down gently in sapphire substrate 100
On the two poles of the earth；Holding is dried in the shade, when it is 2-4 hours a length of；
Step 3：The sapphire substrate 100 for being mounted with chemical reinforced platinum wire 200 to have dried in the shade is put into high-temperature box type
It is sintered in stove；
Step 4：The sapphire substrate 100 for being mounted with chemical reinforced platinum wire 200 sintered is taken out, chemistry is added
Strong type platinum wire 200 is welded in 100 the two poles of the earth of sapphire substrate, and whether test product is qualified, until being qualified products；
Step 5：The coated by special high temperature on 100 surface of sapphire substrate and the reinforced platinum wire 200 of chemistry being welded
Insulation slurry 300；
Step 6：The film platinum resistor for having coated Special high-temperature insulation slurry 300 is put into be sintered in high temperature box furnace and is covered
Film takes out after placing to room temperature after overlay film.
Qualified products wherein in step 4 refer to measuring chemical reinforced platinum wire 200 with MT-1217 digital multimeter
Electrode resistance value waits for that resistance value is 216 Ω, and when not occurring obviously fluctuating, and indicates the success of film platinum resistor electrode welding, Fang Kejin
Row next-step operation.It opens a way when such as measuring, it was demonstrated that on reinforced 200 electrode of platinum wire of chemistry is not connected, the above step need to be repeated
Suddenly, until it is qualified.
The high temperature film platinum resistance based on sapphire substrate 100 of the utility model forms high temperature conduction in structure
Area and insulation layer.Its high temperature conducting region is two platinum wires 200 stretched out outside sapphire substrate 100, and insulation layer is blue precious
Ground mass plate 100.
The acquisition of high temperature conducting region and insulation layer being provided with conducive to temperature, most can the collected temperature of actual response it is true
Property, while also protecting in the environment that temperature detecting element is sealed at one, be conducive to keep its precision and prolonging the service life,
Insulation layer needs to ensure the authenticity of data transmission.
It is sapphire substrate 100 since insulation layer uses, since sapphire coefficient of thermal expansion is small, high temperature resistant, deformation
Small and high-insulativity shortens response time and the impact resistance of film platinum resistor.
100 size of sapphire substrate of the high temperature film platinum resistance based on sapphire substrate 100 of the utility model is：It is wide
Degree is 1.9 ± 0.2cm, and length is 3.9 ± 0.15cm.
100 thickness of retroperitoneal sapphire substrate is 1 ± 0.3cm.
200 length of platinum wire for stretching out sapphire substrate 100 is 4 ± 0.5cm；A diameter of Φ 0.25 of platinum wire 200 ±
0.02cm。
It is enlightenment, through the above description, related work people with the above-mentioned desirable embodiment according to the utility model
Member can carry out various changes and amendments in the range of without departing from this item utility model technological thought completely.This item is real
It is not limited to the contents of the specification with novel technical scope, it is necessary to which its technology is determined according to right
Property range.
In the description of the present invention, it should be understood that the term of indicating position or position relationship is based on attached drawing
Shown in orientation or positional relationship, be merely for convenience of describing the present invention and simplifying the description, rather than indicate or imply institute
The equipment or element of finger must have a particular orientation, with specific azimuth configuration and operation, therefore should not be understood as to this reality
With novel limitation.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " Gu
It is fixed " etc. terms shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；Can be
Mechanical connection can also be electrical connection；It can be directly connected, can also can be indirectly connected through an intermediary two
The interaction relationship of connection or two elements inside element.It for the ordinary skill in the art, can basis
Concrete condition understands the concrete meaning of above-mentioned term in the present invention.
It is in the description of the present invention, it should be noted that term "center", "upper", "lower", "left", "right", " perpendicular
Directly ", the orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, or
The utility model product using when the orientation or positional relationship usually put, be merely for convenience of description the utility model and letter
Change description, do not indicate or imply the indicated device or element must have a particular orientation, with specific azimuth configuration and
Operation, therefore should not be understood as limiting the present invention.In addition, term " first ", " second ", " third " etc. are only used for area
Divide description, is not understood to indicate or imply relative importance.
In addition, the terms such as term "horizontal", "vertical", " pendency " are not offered as requiring component abswolute level or pendency, and
It is that can be slightly tilted.It is not to indicate the structure if "horizontal" refers to only that its direction is more horizontal with respect to for "vertical"
It has to fully horizontally, but can be slightly tilted.
In the present invention unless specifically defined or limited otherwise, fisrt feature is on or below second feature
It may include that the first and second features are in direct contact, can also not be to be in direct contact but pass through it including the first and second features
Between other characterisation contact.Moreover, fisrt feature is on second feature, top and above include fisrt feature the
Right over two features and oblique upper, or be merely representative of fisrt feature level height and be higher than second feature.Fisrt feature is in the second spy
Under sign, lower section and fisrt feature included below are immediately below second feature and obliquely downward, or are merely representative of fisrt feature level
Height is less than second feature.
Claims (10)
1. a kind of high temperature film platinum resistance based on sapphire substrate, which is characterized in that including：Sapphire substrate, and respectively
Two platinum wires being connect with the two poles of the earth of the sapphire substrate；Wherein
It connects and is coated with high-temperature insulation slurry on the sapphire substrate after the platinum wire；
Two platinum wire parts are connect with the sapphire substrate described in connection and the stretching of described platinum wire another part
Sapphire substrate is arranged.
2. the high temperature film platinum resistance according to claim 1 based on sapphire substrate, which is characterized in that the sapphire
Temperature measurement circuit is provided on substrate.
3. the high temperature film platinum resistance according to claim 2 based on sapphire substrate, which is characterized in that the platinum wire
Using the reinforced platinum wire of chemistry.
4. the high temperature film platinum resistance according to claim 3 based on sapphire substrate, which is characterized in that the chemistry adds
Strong type platinum wire by dip microchemistry reinforced platinum slurry put down gently it is fixed to after drying in the shade on the two poles of the earth of the sapphire substrate.
5. the high temperature film platinum resistance according to claim 4 based on sapphire substrate, which is characterized in that dip milligram ammonia
It learns the platinum wire after reinforced platinum slurry and passes through high temperature sintering with sapphire substrate.
6. the high temperature film platinum resistance according to claim 5 based on sapphire substrate, which is characterized in that after high temperature sintering
Two platinum wires and the two poles of the earth of sapphire substrate be welded to connect.
7. the high temperature film platinum resistance according to claim 6 based on sapphire substrate, which is characterized in that the platinum wire
The high-temperature insulation slurry is coated on the sapphire substrate after being welded in described sapphire substrate the two poles of the earth；I.e.
The high-temperature insulation slurry is also coated on the platinum wire being connect with the sapphire substrate.
8. the high temperature film platinum resistance according to claim 7 based on sapphire substrate, which is characterized in that the high temperature is exhausted
Edge slurry is fixed on the process for sapphire-based plate surface by high temperature sintering, forms a protective film.
9. the high temperature film platinum resistance according to claim 8 based on sapphire substrate, which is characterized in that the sapphire
Substrate uses sapphire for raw material, thermal conductivity coefficient 45W/m.K, and coefficient of thermal expansion is 5.0 × 10-6 DEG C, mohs hardness 9.
10. the high temperature film platinum resistance according to claim 9 based on sapphire substrate, which is characterized in that described to be based on
The high temperature film platinum resistance of sapphire substrate is the film platinum resistor of 1000 °C of high temperature resistant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820303421.5U CN208045202U (en) | 2018-03-06 | 2018-03-06 | A kind of high temperature film platinum resistance based on sapphire substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820303421.5U CN208045202U (en) | 2018-03-06 | 2018-03-06 | A kind of high temperature film platinum resistance based on sapphire substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208045202U true CN208045202U (en) | 2018-11-02 |
Family
ID=63950748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820303421.5U Expired - Fee Related CN208045202U (en) | 2018-03-06 | 2018-03-06 | A kind of high temperature film platinum resistance based on sapphire substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208045202U (en) |
-
2018
- 2018-03-06 CN CN201820303421.5U patent/CN208045202U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181102 |