CN207727147U - A kind of substrate tray and reactor for thermal chemical vapor deposition - Google Patents

Abstract

The utility model provides a kind of substrate tray for thermal chemical vapor deposition, including：Central tray and edge ring, it include extension on one on central tray lateral wall, it include a lower extension on edge ring opening inner side wall, the upper extension is arranged above the lower extension, so that central tray obtains the support of edge ring, the edge ring bottom surface includes first area and second area, wherein first area shape is matched with for the barrel support top with support pallet, realize the support and rotation to substrate tray edge ring, second area is located on the outside of the first area, for coordinating lifting and the mobile substrate tray with mechanical arm.

Description

A kind of substrate tray and reactor for thermal chemical vapor deposition

Technical field

The utility model is related to semiconductor processing technology fields, and in particular to one kind being used for metal organic chemical vapor deposition The structure of substrate tray in reactor.

Background technology

Current LED has become more and more important lighting source, and is used to produce the Organometallic Chemistry gas of LED chip Phase deposition reaction chamber (MOCVD) also obtains tremendous development.Wherein MOCVD reactors can also be used to production gallium nitride (GaN) Semiconductor power device, the power device of the silicon substrate of middle generally use, gallium nitride have high-breakdown-voltage, height compared with prior art Many advantages, such as efficiency and high switching frequency, therefore have good market prospects.It is the MOCVD of the prior art as shown in Figure 1a Structure of reactor, reactor include reaction chamber 10, and reaction chamber bottom includes that a hollow rotation bucket 11 is worn from atmospheric environment Enter in reaction chamber, rotation 11 side wall of bucket is realized airtight with reaction chamber bottom by magnetic fluid.It includes one to rotate 11 top of bucket Lateral extension, fixed in extension there are one cylindric barrel supports 13, and 13 top of barrel support is for fixing in substrate tray The inward flange of support ring 16, substrate tray further include a flat support plate 15, and 15 upper surface of support plate includes at least one A recessed portion is for accommodating pending substrate.The top of reaction chamber 10 is provided with inlet duct autoreaction in future air source 1 and anti- It answers in the feeding reaction chamber that 2 two kinds of gases of air source are mutually isolated, flows to the substrate W of lower section.Reaction chamber bottom further includes a pumping Gas port is used to take away the gas after reaction and maintains the extremely low air pressure inside reaction chamber there are one tools close to vacuum.Support plate 15 The resistance wire 17 that multiple heating are also dispersed in the space that supported underneath ring 13 surrounds is used to be evenly heated the support plate of top 15 and substrate.The MOCVD reactors of this structure can realize the growth of GaN material layer.Wherein support plate 15 is usually by graphite As base material, one layer of SiC material layer is coated in graphite surface.

Gaseous exchange is not present in vacuum environment in reactor, can only realize heat by the conduction and heat radiation of object Amount is transmitted, and the upward radiation for the even heat that heater 17 generates, heat is transmitted from 15 bottom of support plate to upper surface, still But there are multiple additional heat in the fringe region of support plate and transmits channel：15 edge side wall of support plate is to the reaction chamber side of low temperature Wall 10 radiates；15 edge bottom surface of support plate low temperature downwards by way of heat transfer by supported underneath ring 16 and barrel support 13 Rotation bucket 11 transmit heat.Wherein bucket 13 is supported usually to be made of quartz, although the not high reaction in vacuum of thermal conductivity In chamber, it is too fast that additional heat dissipation channel still can cause the fringe region of support plate 15 to radiate.So entire support plate 15 Upper surface is just provided with temperature distribution history as shown in Figure 1 b, and wherein edge area temperature can be with the increase surface temperature of radius Degree is rapid to be declined, and tray center region is since meeting is to the tray edge region horizontal proliferation heat of low temperature so also having certain journey The temperature change slope of degree.This can bring about two problems：Temperature on substrate, which can also exist, to be unevenly distributed, the side of support plate 15 Edge region since temperature rate of change is excessive, surface SiC coatings can there is a phenomenon where cracking failures in processing procedure, seriously Influence the service life for the treatment of effect and pallet.

Since the heat dissipation of 15 edge of support plate is too fast, if an extension is arranged again in 15 outside of support plate, can further dislike The heat dissipation effect for changing support plate edge, causes the substrate temperature uniformity in support plate not reach requirement.But if support plate 15 parts that do not extend outward, manipulator can not directly be lifted support plate 15 and remove support plate, can only propped up by setting In support bucket 13 or the lifting mechanism of 15 top of support plate such as lifts thimble (lift pin) and is first lifted support plate to realize, then Mechanical arm is recycled to take support plate 15 or substrate W away, mechanical structure excessively complexity can not reduce cost.Simultaneously support ring 16 It can not be removed by mechanical arm, so the pollutant accumulated in support ring 16 also can not be removed timely, influence treatment effect.It must It needs opening reaction chamber that could clean support ring 16, seriously affects production efficiency.

So needing to develop a kind of new substrate tray in the industry, prevent substrate tray fringe region from cracking, best can So that have better temperature uniformity on substrate, at the same can the convenient and efficient substrate removed on substrate tray and pallet, and Remove the pollutant deposited on substrate tray.

Invention content

The utility model discloses a kind of substrate trays for thermal chemical vapor deposition, including：Central tray and edge Ring, the edge ring are centered around central tray periphery, include extension on one, edge ring opening inner side on central tray lateral wall Include a lower extension on wall, the upper extension is arranged above the lower extension so that central tray obtains edge ring Support, the edge ring bottom surface includes first area and second area, wherein first area shape and is used to support pallet Matching at the top of barrel support realizes that the support and rotation to edge ring, second area are located at the first area and the barrel support Outside, for coordinating lifting and the mobile substrate tray with mechanical arm.The central tray upper surface includes at least one recessed Concave portion is for placing substrate.

Best, the central tray surface is made of the first material, and edge ring surface is made of the second material, wherein the Thermal conductivity, the emissivity of two materials are less than the thermal conductivity and emissivity of first material.First material can be carbonization Silicon coating, the second material can be selected from one of SiN, BN and sialon ceramics.The wherein described central tray can also be that matrix is Graphite, graphite are coated with coat of silicon carbide outside, and edge ring is integrally made of the second material.

The substrate tray further includes an intermediate ring between the central tray and edge ring, and the intermediate ring includes Upper extension positioned at the lower extension of intermediate ring opening inner side and on the outside of intermediate ring, the lower extension with the edge ring It matches each other with the upper extension of central tray so that central tray, intermediate ring overlay in edge ring successively.One recessed portion For placing the depressed area of substrate in the central tray upper surface or the central tray and intermediate ring upper surface.

Optionally, the lower surface of the upper extension includes the first inclined surface, and the upper surface of lower extension is inclined including second Inclined-plane, first inclined surface and the second inclined surface match each other so that two inclined surface mutually fit.

Preferably, lower extension upper surface further includes a support portion upwardly extended, the support portion top surface and institute The portion bottom surface contact for stating the upper extension of central tray, to support the central tray.Further, the support portion is in There are the first gaps between heart pallet lateral wall, between the upper extension end face outside and edge ring madial wall of the central tray There are the second gaps.First gap and the second gap are more than 0.3mm and are less than 1.5mm.It can be on the outside of the upper extension The filling part extended downwardly including one, there are gaps between the filling part and edge ring inner wall and the support portion.

The utility model also provides a kind of substrate tray for thermal chemical vapor deposition, and the substrate tray includes multiple Combiner, the multiple combiner include：One central tray and multiple edge rings, the edge ring are centered around center support Disk periphery, the central tray and multiple edge rings are arranged in order from inside to outside, wherein passing through support between each combiner Device is fixed with adjacent combiner, and the support device includes the upper extension being located on the combiner lateral wall of inside, And with the upper matched adjacent lower extension combined on part innerside wall of extension, wherein outermost edges ring bottom surface wrap First area and second area are included, wherein first area shape is matched with for the barrel support top with support pallet, realization pair The support and rotation of substrate tray edge ring, second area are located on the outside of the first area and the barrel support, are used for and machine The cooperation of tool arm lifts and the mobile substrate tray.The central tray surface is made of the first material, outermost edges ring table Face is made of the second material, wherein the thermal conductivity of the second material, emissivity are less than the thermal conductivity and emissivity of first material. Further, the edge ring surface between central tray and outermost edges ring is made of third material, and described The thermal conductivity of three materials is less than the thermal conductivity of first material, and the emissivity of third material is higher than the emissivity of the second material.

The utility model also provides a kind of thermal chemical vapor deposition reactor, including：Reaction chamber, bottom includes in reaction chamber One barrel support, for the setting of barrel support top there are one substrate tray, the substrate tray includes a central tray and a side Edge ring, the edge ring are centered around central tray periphery, include extension on one on central tray lateral wall, in edge ring opening Include a lower extension on side wall, the upper extension is arranged above the lower extension so that central tray obtains edge The support of ring, the edge ring bottom surface include first area and second area, wherein first area shape and are used for and supporting bracket Matching at the top of the barrel support of disk realizes that the support and rotation to substrate tray edge ring, second area are located at the first area With barrel support outside, it is used to coordinate lifting with mechanical arm and the mobile substrate tray, inlet duct supplies reaction gas It should arrive above the substrate tray；Heater is located in barrel support, below substrate tray；Pumping positioned at reaction chamber bottom fills It sets so that reaction chamber is in vacuum state in chemical vapor deposition processes.

Description of the drawings

Fig. 1 a are prior art MOCVD reactor schematic diagrames；

Fig. 1 b are the Temperature Distribution schematic diagram on pallet in the prior art；

Fig. 2 is the pallet and support ring diagrammatic cross-section of the utility model first embodiment；

Fig. 3 a, 3b are the pallet and support ring diagrammatic cross-section and stereogram of the utility model second embodiment；

Fig. 4 is the Temperature Distribution schematic diagram on pallet in the utility model the first and second embodiments；

Fig. 5 is the pallet and support ring diagrammatic cross-section of the utility model 3rd embodiment.

Specific implementation mode

Below in conjunction with attached drawing 2~5, specific embodiment of the utility model is further illustrated.

The utility model discloses a kind of substrate trays for MOCVD reactors.As shown in Fig. 2, the utility model support Disk includes two parts, is located at the central tray 15a of the central area and edge ring 15b positioned at peripheral region, and wherein center is held in the palm The upper surfaces disk 15a include recessed portion, and pending substrate can be arranged in recessed portion.Central tray 15a lateral walls upper end includes One upper extension 15a1.Edge ring 15b outboard ends include an outer extensions 15b3, and the bottom of outer extensions 15b3 includes One is lifted plane, when pallet and the substrate on pallet need to transfer, is stretched into and is lifted under plane by mechanical arm, lift Tray edge ring 15b is risen, pallet is finally moved to other positions.Edge ring 15b is wrapped close to the madial wall lower end of central tray A lower extension 15b1 is included, wherein lower extension 15b1's is laterally extended inwardly so that the lower part formed on the inside of edge ring Opening diameter is less than upper diameter.Matched, upper extension 15a1 prolongs outward from the outer peripheral top of central tray It stretches so that the diameter of the upper surfaces central tray 15a is more than the diameter of lower surface.The upper extension 15a1 of central tray 15a and side The lower extension 15b1 of edge ring 15b has inclined side wall so that the two can match each other, and central tray 15a obtains edge The support of ring 15b lower extensions 15b1 is fixed on the inside of edge ring 15b.Wherein 13 top of barrel support can be inwardly angled, The corresponding bottom surfaces edge ring 15b also include a recess 15b2 so that the bottom surface for the 15b2 that is recessed fits to 13 top of barrel support On lateral wall, the two rotates synchronously.Wherein central tray 15a may be used traditional graphite substrate and coat the material of one layer of SiC Material, edge ring 15b need that completely different material, such as SiN, BN, Sialon (sialon) etc., these materials is selected to have than existing There is material pallet traditional in technology that there is lower thermal conductivity coefficient (thermal conductivity), lower emissivity (emissivity), these best materials do not need external additional coat, but single homogeneous material.

Since the utility model uses the material with more low thermal conductivity and more low-launch-rate on edge ring 15b, So heat on edge ring 15b scattered and disappeared by heat radiation and heat transfer it is less, so can have compared with prior art more The numerical value that high temperature, smaller temperature gradient, while the heat on central tray 15a diffuse laterally into edge ring 15b also can It reduces, so the temperature uniformity on central tray 15a also significantly improves.The substrate tray of the utility model uses two The mode of component combination, even if the upper lower extension between central tray and edge ring is bonded by inclined surface, due to two Person's surfacing is coarse, and practical direct contact area very little can not be conducted heat in vacuum environment by gaseous exchange, so Capacity of heat transmission in the utility model first embodiment between substrate tray difference component is much smaller than graphite-based in the prior art The internal capacity of heat transmission.

As shown in Figure 3a, the utility model additionally provides the embodiment of another substrate tray, with shown in Fig. 2 first Embodiment is similar, and the main distinction is upper extension 25a1 and the inside edges edge ring 25b of central tray 25a outer ledges Lower extension 25b1.The lower extension 25b1 of edge ring 25b is laterally inward side extension, lower extension 25b1 inside regions Upper surface further includes that a vertical support portion 25b2 is upwardly extended from the inner end of lower extension 25b1, upper extension 25a1 Bottom surface be placed on the support portion 25b2, the lower surfaces of the upper extension 25a1 lateral areas further include one vertically to Lower extension 25b1, support portion 25b2 and the edge ring body of the ring type filling 25a2 of lower extension, wherein ring type filling 25a2 and lower section There is gap between 25b madial walls.Further include an outer extensions 25b3 on the outside of edge ring 25b, outer extensions have flat The upper and lower surface in face, the wherein lower surfaces outer extensions 25b3 inside region are contacted with the top surface of the barrel support 13 of lower section, realization pair The support of edge ring 25b, the lower surfaces outer extensions 25b3 lateral area further include lifting plane for lifting substrate tray 25. Fig. 3 b show the stereochemical structure sectional view of the utility model substrate tray shown in Fig. 3 a.

Wherein the material selection of central tray 25a and edge ring 25b can also be identical as embodiment one, and central tray uses Graphite matrix is coated with SiC layer, and edge ring 25b is made of materials such as SiN, BN, Sialons (sialon).The utility model In two embodiments, the heat of the central tray 25a of high temperature is not that directly laterally outwardly lateral edges ring 25b conducts, and can only pass through branch Support part 25b2 top surfaces realize heat transfer with the mutual contact area of upper extension lower surface, this contact area only has very Small area.And due to being the resistive heater 17 of heater below edge ring, heat is spread from bottom to top, so edge ring The temperature of the bottom surfaces 25b is higher than the temperature of upper surface, so the temperature of underlying lower extension 25b1 is close on being even higher than The temperature of extension 25a1, so only little heat can downwards be conducted from upper extension 25b1, by support portion 25b2 under Extension 25b1 reaches edge ring body 25b.The edge ring in ring type filling and outside is not directly contacted with, by ring type filling 25a2 to side The heat of edge ring 25b radiation is also seldom, so the heat that central tray 25a is spread to the edge ring 25b positioned at its periphery is seldom, There is more uniform Temperature Distribution in central tray, when inputting same heating power to heater 17, the whole temperature of the utility model Degree can also be slightly above the prior art.

Fig. 4 shows the temperature distribution history on pallet 15,25 when above-mentioned first embodiment and second embodiment are implemented, Middle curve 15 is using the temperature curve in Fig. 2 when the pallet 15 of first embodiment structure on pallet, and curve graph 25 is using figure Temperature distribution history in 3a when the pallet 25 of second embodiment structure on pallet.Wherein the utility model second embodiment due to Central tray is also only upper between edge ring, and there are thermal conductivity accesses between lower extension 25a1,25b1 and support portion 25b2, so The heat very little spread from central tray to edge ring, therefore the heat in central tray region will not be spread substantially to periphery, temperature Degree distribution is more uniform.In edge ring position, due to both using the material of lower thermal conductivity, low-launch-rate so with similar Temperature distribution history, the temperature change of the slope (temperature gradient) of temperature variation curve more than tray edge region in Fig. 1 b Slope of a curve is low, so the utility model can crack to avoid tray edge region, while can ensure the base on pallet Piece has uniform temperature.

It is the utility model 3rd embodiment shown in Fig. 5, opposite the utility model second embodiment, upper extension therein There is no the ring type filling 25b2 to extend downwards on 25a1, on the inside of the support portion 25b2 on lower extension 25b1 and edge ring body 25b There are gap g2 between wall, and there are gap g1 between support portion 25b2 and central tray lateral wall.In in the utility model Heart pallet 25a and edge ring 25b uses different materials, by the selection of different materials so that having most preferably on substrate tray Temperature Distribution, but the expansion amplitude that the different coefficient of thermal expansion of two kinds of materials both can also make in temperature changing process is not Together, preferably can be 0.3-1.5mm, the too small then base in gap so needing to ensure that above-mentioned gap g1, g2 have suitable numerical value Two components of tablet tray 25 are squeezed mutually in temperature-rise period and can be deformed, and substrate tray upper surface is then flowed through very much in gap greatly Air flow method can be impacted.

The utility model substrate tray, can also be by three or more ring groups other than it can be made of two components It closes, for example the utility model central tray 25a shown in fig. 5 may further include one positioned at central tray periphery Ring is compensated, compensation ring is further placed on the edge ring 25b of periphery, passes through different materials between central tray and back-off ring Selection or the design of support construction can change what central tray 25a was conducted to the heat and pallet inner transverse of external radiation Heat.Same edge ring can also be separated further into two ring-shaped components of inward flange ring and outer edge ring and be composed, inside and outside Edge ring may be used identical or different material and be made, inward flange ring by shown in the utility model embodiment 1-3 by upper The support device of lower extension composition obtains the support of outer edge ring, further includes outer extensions on the outside of outer edge ring.Wherein inner edge Edge ring can also use material in the third all different from outer edge ring and central tray to be made, because of the outer side edges of inward flange ring Edge is not to the outer extensions 25b3 of low temperature environment radiations heat energy around, so inward flange ring is imitated using the material of low-launch-rate Fruit is limited, it is only necessary to consider that the thermal conductivity for reducing material can reduce the diffusion heat of outside edge ring, so inward flange ring can To use lower thermal conductivity, the third material such as silica of high emissivity.Branch between central tray on the inside of inward flange ring simultaneously Support arrangement can also select between Fig. 2 and embodiment illustrated in fig. 3 as needed, select the support of first embodiment shown in Fig. 2 When device, the lower extension of extension and inward flange ring is the inclined surface being close to mutually, heat conduction between the two in central tray Substantially reduce although amount has compared with prior art, absolute value is still larger.Select the support in second embodiment shown in Fig. 3 The contact area very little of support portion and upper extension when device, the heat conduction amount between central tray and inward flange ring are much smaller than Fig. 2 Shown in support device embodiment.It can be further by the selection of the material and apparatus structure supported on both sides of internal edge ring The temperature distribution history of entire substrate tray upper surface is adjusted, the uniformity of Temperature Distribution on substrate is improved.

The utility model is to the improvement of substrate tray structure and material so that the temperature on substrate tray has preferably One property, so the temperature difference of the temperature and central tray in edge ring at 13 position of barrel support is also smaller, substrate is placed More uniform treatment effect can be obtained in central tray upper table surface treatment.Greatly changed using the substrate tray of the utility model structure Kind temperature distribution evenness can also make effective Substrate treatment range extend also to closer to peripheral region, for example arrive side On the inside of edge ring upper surface, so in carrying out chemical vapor deposition processes, the utility model uses same compared with the prior art The substrate of larger diameter can be placed when barrel support.

The utility model is due to being greatly reduced from edge ring dispersed heat, so the outer extensions on the outside of edge ring can With with the enough length that extends outwardly so that mechanical arm, which can extend into, disposably lifts and transport center support below outer extensions Disk, edge ring and the substrate of top do not need other additional lifting mechanism lifting central trays and remove base by mechanical arm again Piece or substrate tray.After substrate is moved out of substrate tray, central tray and edge ring can be cleaned, and be deposited on removing The reaction product on its surface.Substrate tray can carry new substrate feeding reactor progress instead again after completing cleaning process It answers.

The utility model is suitable for the application scenario of various thermal chemical vapor depositions (Thermal CVD), such as above-mentioned MOCVD Using, in these application scenarios, need could be formed on substrate with equally distributed high temperature (be higher than 500 DEG C) it is equal The material layer of even high yield.So the temperature uniformity of the pallet of control substrate and support substrate, becomes and directly determines substrate Handle the key element of quality.

Although the content of the utility model is discussed in detail by above preferred embodiment, but it should be appreciated that on The description stated is not considered as limitations of the present invention.After those skilled in the art have read the above, for A variety of modifications and substitutions of the utility model all will be apparent.Therefore, the scope of protection of the utility model should be by appended Claim limit.

Claims (19)

1. a kind of substrate tray for thermal chemical vapor deposition, including：

Central tray and edge ring, the edge ring are centered around central tray periphery, include prolonging on one on central tray lateral wall Extending portion, includes a lower extension on edge ring opening inner side wall, and the upper extension is arranged above the lower extension so that Central tray obtains the support of edge ring,

The bottom surface of the edge ring includes first area and second area, wherein first area shape and the branch for being used to support pallet Matching at the top of bucket is supportted, realizes that the support and rotation to edge ring, second area are located at outside the first area and the barrel support Side, for coordinating lifting and the mobile substrate tray with mechanical arm.

2. being used for the substrate tray of thermal chemical vapor deposition as described in claim 1, which is characterized in that the central tray table Face is made of the first material, and edge ring surface is made of the second material, and first material is coat of silicon carbide, the second material packet Include one of SiN, BN and sialon ceramics.

3. being used for the substrate tray of thermal chemical vapor deposition as claimed in claim 2, which is characterized in that the central tray base Body is graphite, and coat of silicon carbide is coated with outside graphite, and edge ring is integrally made of the second material.

4. being used for the substrate tray of thermal chemical vapor deposition as described in claim 1, which is characterized in that the substrate tray is also Including a compensation ring between the central tray and edge ring, the compensation ring includes being located under intermediate ring opening inner side Extension and the upper extension on the outside of intermediate ring, it is mutual with the lower extension of the edge ring and the upper extension of central tray Match so that central tray, compensation ring overlay in edge ring successively.

5. being used for the substrate tray of thermal chemical vapor deposition as described in claim 1, which is characterized in that in the central tray Surface includes at least one recessed portion for placing substrate.

6. as claimed in claim 4 be used for thermal chemical vapor deposition substrate tray, which is characterized in that the central tray and Compensation ring upper surface includes an at least recessed portion for placing substrate.

7. being used for the substrate tray of thermal chemical vapor deposition as described in claim 1, which is characterized in that the upper extension Lower surface includes the first inclined surface, and the upper surface of lower extension includes the second inclined surface, and first inclined surface and second tilt Face matches each other so that two inclined surface mutually fit.

8. being used for the substrate tray of thermal chemical vapor deposition as described in claim 1, which is characterized in that in the lower extension Surface further includes a support portion upwardly extended, the portion of the top surface of the support portion and the upper extension of the central tray Divide bottom surface contact, to support the central tray.

9. being used for the substrate tray of thermal chemical vapor deposition as claimed in claim 8, which is characterized in that the central tray There are the first gap (g2) between upper extension end face outside and edge ring madial wall.

10. as claimed in claim 9 be used for thermal chemical vapor deposition substrate tray, which is characterized in that the support portion with There are the second gap (g1), the first gap and the second gaps to be more than 0.3mm and be less than 1.5mm between central tray lateral wall.

11. being used for the substrate tray of thermal chemical vapor deposition as claimed in claim 8, which is characterized in that the upper extension Outside includes a filling part extended downwardly, and there are gaps between the filling part and edge ring inner wall and the support portion.

12. a kind of substrate tray for thermal chemical vapor deposition, the substrate tray includes multiple combiners, the multiple Combiner includes：

One central tray and multiple edge rings, the edge ring are centered around central tray periphery, the central tray and multiple Edge ring is arranged in order from inside to outside, wherein fixed by support device and adjacent combiner between each combiner, The support device include be located inside combiner lateral wall on upper extension, and with the upper matched phase of extension Lower extension on adjacent combiner madial wall,

Wherein outermost edges ring bottom surface includes first area and second area, wherein first area shape and is used for and supporting bracket Matching at the top of the barrel support of disk realizes that the support and rotation to substrate tray edge ring, second area are located at the first area With barrel support outside, it is used for and mechanical arm coordinates lifting and the mobile substrate tray.

13. being used for the substrate tray of thermal chemical vapor deposition as claimed in claim 12, which is characterized in that the central tray Upper includes that a recessed portion is used to that substrate to be arranged.

14. being used for the substrate tray of thermal chemical vapor deposition as claimed in claim 12, which is characterized in that the central tray Surface is made of the first material, and outermost edges ring surface is made of the second material, and first material is coat of silicon carbide, the Two materials include one of SiN, BN and sialon ceramics.

15. being used for the substrate tray of thermal chemical vapor deposition as claimed in claim 12, which is characterized in that the support device Middle lower extension upper surface further includes a vertical supporter upwardly extended, the vertical supporter top surface and the center The portion bottom surface of the upper extension of pallet contacts, to support the central tray, the upper extension outboard end of the central tray There are a gap (g2) between face and edge ring madial wall.

16. a kind of thermal chemical vapor deposition reactor, including a reaction chamber, include in the reaction chamber：

One substrate tray, the substrate tray include that a central tray and an edge ring, the edge ring are centered around center Pallet is peripheral, includes extension on one on central tray lateral wall, includes a lower extension on edge ring opening inner side wall, described Upper extension is arranged above the lower extension so that central tray obtains the support of edge ring, the bottom surface of the edge ring Including first area and second area；

One barrel support, including an annular top, the annular top are contacted with the first area of the edge ring bottom surface, realization pair The support and rotation of substrate tray edge ring, second area are located on the outside of the first area and the barrel support, are used for and machine The cooperation of tool arm lifts and the mobile substrate tray,

Reaction gas is supplied to above the substrate tray by one inlet duct；

One heater is located in the barrel support, below the substrate tray；

One air extractor is located at the bottom of the reaction chamber so that the reaction chamber is in chemical vapor deposition processes in true Dummy status.

17. thermal chemical vapor deposition reactor as claimed in claim 16, which is characterized in that the central tray surface is by One material is made, and edge ring surface is made of the second material, and first material is coat of silicon carbide, the second material include SiN, One of BN and sialon ceramics.

18. thermal chemical vapor deposition reactor as claimed in claim 16, which is characterized in that the central tray upper table bread At least one recessed portion is included for placing substrate.

19. thermal chemical vapor deposition reactor as claimed in claim 16, which is characterized in that the lower extension upper surface is also The portion bottom surface of the support portion upwardly extended including one, the support portion top surface and the upper extension of the central tray connects It touches, to support the central tray, there are a gap (g2) between the upper extension end face outside and edge ring madial wall.