CN207070035U - The drain modulation circuit of GaN high electron mobility transistor - Google Patents

Abstract

A kind of this disclosure relates to drain modulation circuit of GaN high electron mobility transistor.The drain modulation circuit of disclosure GaN high electron mobility transistor, including：Pulse driving circuit, on-off circuit and overshoot protection circuit；The pulse driving circuit is used to produce the opposite pulse signal of two-way level；The on-off circuit is used to control turning on and off for N-type metal-oxide semiconductor (MOS) NMOS；The overshoot protection circuit is used for the output voltage for controlling the drain modulation circuit of the GaN high electron mobility transistor GaN HEMT.The disclosure is using NMOS as the switching device between power supply and GaN HEMT drain electrode; its size is smaller, price is relatively cheap; reduce the holistic cost and area of circuit; and solve in huge overshoot caused by source current acute variation; the nmos switch device in GaN HEMT drain modulation circuit is protected, improves the reliability of circuit.

Description

The drain modulation circuit of GaN high electron mobility transistor

Technical field

This disclosure relates to circuit engineering, in particular it relates to a kind of drain modulation of GaN high electron mobility transistor Circuit.

Background technology

Usual GaN high electron mobility transistor (GaN High Electron Mobility Transistor, letter Claim：GaN HEMT) grid voltage need for negative voltage, when grid voltage is 0V, GaN HEMT are in heavily conducting state, such as Fruit GaN HEMT drain voltage still in working condition, then can produce high current so that GaN HEMT are burned out.Therefore GaN is worked as When HEMT grid voltage does not load correctly, must ensure GaN HEMT drain electrode will not go up electricity.Based on this, in order to protect GaN HEMT, can be with when grid voltage does not load correctly, it is necessary to set switch between GaN HEMT drain electrode and power supply By turning off switch protection GaN HEMT.What is more, in pulse application, except being also required in inter-train pause by power remove, Also need to that GaN HEMT drain voltage is down into 0V within nanosecond other time.

In correlation technique, conventional switch is P-type mos (P Metal Oxide Semiconductor, referred to as：PMOS) switching device.But PMOS switch device is because its carrier mobility is relatively low, in order to Realize corresponding ducting capacity, PMOS switch device can take larger printed circuit board (Printed Circuit Board, Referred to as：PCB) area, and cost is higher, the drain parasitic capacitance of PMOS switch device is larger in addition, causes drain voltage can not Rapid shut-off, common name have the hangover of Microsecond grade, and serious meeting causes GaN HEMT to be burned out.

Utility model content

The purpose of the disclosure is to provide a kind of drain modulation circuit of GaN high electron mobility transistor.

To achieve these goals, the disclosure provides a kind of GaN HEMT drain modulation circuit, including：Pulsed drive electricity Road, on-off circuit and overshoot protection circuit；

The pulse driving circuit is used to produce the opposite pulse signal of two-way level；

The on-off circuit is used to control turning on and off for N-type metal-oxide semiconductor (MOS) NMOS；

The overshoot protection circuit is used for the output voltage for controlling the drain modulation circuit of the GaN HEMT.

Optionally, the on-off circuit includes：First input port, the second input port, the first amplifier, the second amplification Device, the first NMOS and the 2nd NMOS；

Wherein, the first input port is connected with a pin of first amplifier, first amplifier Another pin is connected with the grid of the first NMOS；One pin of second input port and second amplifier Connection, another pin of second amplifier are connected with the grid of the 2nd NMOS；

First NMOS and the 2nd NMOS series connection, the drain electrode of the first NMOS connect the first power supply, and described the Two NMOS source ground；The drain modulation electricity of the GaN HEMT is connected between first NMOS and the 2nd NMOS The output port on road；The output port of the drain modulation circuit of the GaN HEMT is connected with the drain electrode of the GaN HEMT.

Optionally, in addition to：Booster circuit；

One end of the booster circuit is connected with second source, the other end of the booster circuit and first amplifier The 3rd pin connection.

Optionally, the pulse driving circuit includes：Negative voltage generating circuit, pulse control signal generation circuit, with door and NOT gate；

One end of the negative voltage generating circuit and the pulse control signal generation circuit are connected to described and door；It is described It is connected with an output end of door with the first input port；The input with another output end of door and the NOT gate End connection, the output end of the NOT gate are connected with second input port；The other end of the negative voltage generating circuit with it is described GaN HEMT grid connection.

Optionally, the overshoot protection circuit includes：First diode and the second diode；

First diode is in parallel with the first NMOS, and second diode is in parallel with the 2nd NMOS.

Optionally, the 3rd pin of second amplifier is connected with the second source, second amplifier 4th pin ground connection.

Optionally, the output end of the 4th pin of first amplifier and the drain modulation circuit of the GaN HEMT Mouth connection.

Pass through above-mentioned technical proposal, using NMOS as the switching device between power supply and GaN HEMT drain electrode, its chi It is very little it is smaller, price is relatively cheap, reduce the holistic cost and area of circuit, and solve in source current acute variation Caused huge overshoot, the nmos switch device in GaN HEMT drain modulation circuit is protected, improves the reliable of circuit Property.

Other feature and advantage of the disclosure will be described in detail in subsequent specific embodiment part.

Brief description of the drawings

Accompanying drawing is for providing further understanding of the disclosure, and a part for constitution instruction, with following tool Body embodiment is used to explain the disclosure together, but does not form the limitation to the disclosure.In the accompanying drawings：

Fig. 1 is the drain modulation circuit block diagram of GaN HEMT according to an exemplary embodiment a kind of.

Fig. 2 is the drain modulation circuit block diagram of GaN HEMT according to an exemplary embodiment a kind of.

Embodiment

The embodiment of the disclosure is described in detail below in conjunction with accompanying drawing.It should be appreciated that this place is retouched The embodiment stated is merely to illustrate and explained the disclosure, is not limited to the disclosure.

Fig. 1 is the drain modulation circuit block diagram of GaN HEMT according to an exemplary embodiment a kind of.Reference picture 1, The drain modulation circuit of the GaN HEMT includes pulse driving circuit, on-off circuit and overshoot protection circuit；Pulse driving circuit The pulse signal opposite for producing two-way level；On-off circuit is used to control N-type metal-oxide semiconductor (MOS) (N Metal Oxide Semiconductor, referred to as：Turning on and off NMOS)；Overshoot protection circuit is used for the drain electrode for controlling GaN HEMT The output voltage of modulation circuit.

Wherein, on-off circuit includes：First input port, the second input port, the first amplifier, the second amplifier, One NMOS (NMOS1), the 2nd NMOS (NMOS2)；First input port is connected with a pin of the first amplifier, the first amplification Another pin of device and NMOS1 grid G connect；Second input port is connected with a pin of the second amplifier, and second Another pin of amplifier and NMOS2 grid G connect；NMOS1 and NMOS2 series connection, the NMOS1 electricity of drain D connection first Source VDD1, NMOS2 source S ground connection；The output end of GaN HEMT drain modulation circuit is connected between NMOS1 and NMOS2 Mouth Vout；The output port Vout of GaN HEMT drain modulation circuit is connected with GaN HEMT drain electrode.Booster circuit Vboost one end is connected with second source VDD2, and the other end of booster circuit is connected with the 3rd pin of the first amplifier. Overshoot protection circuit includes：First diode Diode1 and the second diode Diode2；First diode Diode1 and NMOS1 is simultaneously Connection, the second diode Diode2 are in parallel with NMOS2.

Fig. 2 is the drain modulation circuit block diagram of GaN HEMT according to an exemplary embodiment a kind of.Reference picture 2, Pulse driving circuit includes：Negative voltage generating circuit, pulse control signal generation circuit and door and NOT gate；Negative voltage generating circuit One end and pulse control signal generation circuit is connected to and door；Connect with an output end of door with first input port (PWM1) Connect；It is connected with the input of another output end NAND gate of door, the output end of NOT gate is connected with the second input port (PWM2)； The other end of negative voltage generating circuit is connected with GaN HEMT grid.

In the disclosure, first input port input signal for pulse width modulation (Pulse Width Modulation, Referred to as：PWM1), the signal of the second input port input is PWM2, and PWM1 controls NMOS1 by the first amplifier, when PWM1 is High level, NMOS1 drain D and source S are open-minded；PWM2 controls NMOS2 by the second amplifier, when PMW2 is high level, NMOS2 miss D and source S is open-minded.To avoid power supply and ground short circuit, PWM1 and PWM2 can not be high level simultaneously.First electricity Source VDD1 is 28~50V power supply, is powered for GaN HEMT, and second source VDD2 is 5~10V power supply, is supplied for on-off circuit Electricity.The output port Vout of GaN HEMT drain modulation circuit is that the power supply after impulse modulation is exported to GaN HEMT leakage Pole.The lifting of the supply voltage of first amplifier arrive VA+10V or so by booster circuit Vboost, and VA is the voltage of A points in figure, VA It can change between 0~VDD2.

In the present embodiment, in order to reduce the loss of power supply, NMOS1 and NMOS2 resistance is set to be less than 100m Ω, GaN Electric capacity (including NMOS1 and NMOS2 electric capacity, GaN HEMT electricity on the output port Vout of HEMT drain modulation circuit Appearance and some filter capacitors and radio-frequency-short capacitance) it is no more than 10nF, the charge and discharge of such GaN HEMT drain modulation circuit The time of electricity can be nanosecond order, even if considering ringing caused by current over pulse, input first input port and the The rise and fall delay of the pulse signal of two input ports can be determined to be less than 50ns, can met most of high-power Pulsed microwave power circuit application.

When the rise and fall delay of input first input port and the pulse signal of the second input port is reduced to nanosecond amount During level, during being switched on and off of NMOS1 and NMOS2, curent change is very big, and its rate of change is 1GA/S magnitude, because This is in GaN HEMT drain modulation circuit, even if very small stray inductance will also result in huge overshoot voltage, the mistake The calculation formula for rushing voltage is：DV=di/dt × L, wherein L are stray inductance, and di/dt is current changing rate.Even if 50nH's Stray inductance can also cause more than 50V overshoot voltage, and the overshoot voltage is superimposed upon on 28~50V voltage, it will usually is exceeded The breakdown voltage of nmos switch device and GaN HEMT, causes circuit to damage.Device failure caused by order to prevent overshoot voltage, First diode Diode1 and the second diode Diode2 can play a protective role, when the voltage of A points is more than VDD2+Von When (Von is diode forward conducting voltage), the first diode Diode1 conductings, positive voltage overshoot is eliminated；When the voltage of A points is low When VDD2-Von, the second diode Diode2 conductings, negative voltage overshoot is eliminated.Pass through the first diode Diode1 and the two or two Pole pipe Diode2 protection, generally overshoot can control within less voltage (can be less than 5V) that (this is mainly due to two Caused by pole pipe stray inductance in itself and resistance).

The disclosure, using NMOS as the switching device between power supply and GaN HEMT drain electrode, its size is smaller, price It is relatively cheap, the holistic cost and area of circuit are reduced, and solve huge caused by source current acute variation Overshoot, protects the nmos switch device in GaN HEMT drain modulation circuit, improves the reliability of circuit.

The preferred embodiment of the disclosure is described in detail above in association with accompanying drawing, still, the disclosure is not limited to above-mentioned reality The detail in mode is applied, in the range of the technology design of the disclosure, a variety of letters can be carried out to the technical scheme of the disclosure Monotropic type, these simple variants belong to the protection domain of the disclosure.

It is further to note that each particular technique feature described in above-mentioned embodiment, in not lance In the case of shield, it can be combined by any suitable means.In order to avoid unnecessary repetition, the disclosure to it is various can The combination of energy no longer separately illustrates.

In addition, it can also be combined between a variety of embodiments of the disclosure, as long as it is without prejudice to originally Disclosed thought, it should equally be considered as disclosure disclosure of that.

Claims (7)

1. A kind of 1. GaN high electron mobility transistor GaNHEMT drain modulation circuit, it is characterised in that including：Pulse Drive circuit, on-off circuit and overshoot protection circuit；

   The pulse driving circuit is used to produce the opposite pulse signal of two-way level；

   The on-off circuit is used to control turning on and off for N-type metal-oxide semiconductor (MOS) NMOS；

   The overshoot protection circuit is used for the output voltage for controlling the drain modulation circuit of the GaNHEMT.
2. 2. GaNHEMT according to claim 1 drain modulation circuit, it is characterised in that the on-off circuit includes：The One input port, the second input port, the first amplifier, the second amplifier, the first NMOS and the 2nd NMOS；

   Wherein, the first input port is connected with a pin of first amplifier, first amplifier it is another Individual pin is connected with the grid of the first NMOS；One pin of second input port and second amplifier connects Connect, another pin of second amplifier is connected with the grid of the 2nd NMOS；

   First NMOS and the 2nd NMOS series connection, drain electrode the first power supply of connection of the first NMOS, described second NMOS source ground；The drain modulation circuit of the GaNHEMT is connected between first NMOS and the 2nd NMOS Output port；The output port of the drain modulation circuit of the GaNHEMT is connected with the drain electrode of the GaNHEMT.
3. 3. GaNHEMT according to claim 2 drain modulation circuit, it is characterised in that also include：Booster circuit；

   One end of the booster circuit is connected with second source, and the of the other end of the booster circuit and first amplifier Three pin connections.
4. 4. GaNHEMT according to claim 2 drain modulation circuit, it is characterised in that the pulse driving circuit bag Include：Negative voltage generating circuit, pulse control signal generation circuit and door and NOT gate；

   One end of the negative voltage generating circuit and the pulse control signal generation circuit are connected to described and door；Described and door An output end be connected with the first input port；It is described to connect with another output end of door and the input of the NOT gate Connect, the output end of the NOT gate is connected with second input port；The other end of the negative voltage generating circuit with it is described GaNHEMT grid connection.
5. 5. GaNHEMT according to claim 2 drain modulation circuit, it is characterised in that the overshoot protection circuit bag Include：First diode and the second diode；

   First diode is in parallel with the first NMOS, and second diode is in parallel with the 2nd NMOS.
6. 6. GaNHEMT according to claim 3 drain modulation circuit, it is characterised in that the of second amplifier Three pins are connected with the second source, the 4th pin ground connection of second amplifier.
7. 7. GaNHEMT according to claim 2 drain modulation circuit, it is characterised in that the of first amplifier Four pins are connected with the output port of the drain modulation circuit of the GaNHEMT.