CN206993123U - Optical module based on infraluminescence source - Google Patents
Optical module based on infraluminescence source Download PDFInfo
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- CN206993123U CN206993123U CN201720546766.9U CN201720546766U CN206993123U CN 206993123 U CN206993123 U CN 206993123U CN 201720546766 U CN201720546766 U CN 201720546766U CN 206993123 U CN206993123 U CN 206993123U
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- 230000003287 optical effect Effects 0.000 title claims abstract description 47
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 10
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 10
- 239000002131 composite material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003090 exacerbative effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
A kind of optical module based on infraluminescence source is the utility model is related to, including：Carinate type LED light emitting sources, receiver, synthesis chip, memory and optical interface；Wherein, synthesis chip includes driver, amplifier and processor, and is connected respectively with light emitting source and receiver；Light emitting source and receiver are connected with optical interface respectively.Optical module provided by the utility model based on infraluminescence source, using the light emitting source of high luminous efficiency, and then reduce the power consumption of optical module；The production cost of light emitting source is less than existing LASER Light Source simultaneously, reduces the production cost of optical module.
Description
Technical Field
The utility model relates to an optical communication technical field especially relates to an optical module based on infrared light emitting source.
Background
With the rapid development of internet technology, the demand of people for network resources is rapidly increased, services provided by the internet tend to be diversified, and all the realization needs a high-speed optical network as a carrier. At present, the construction of a high-speed optical network becomes a national will, the convergence of three networks becomes a great trend, and rich network resources provide complete services for enterprises and merchants while providing brand-new interactive entertainment modes and life experiences for users.
With the more mature optical network construction, the optical communication industry is gradually pursued by large equipment suppliers, raw material suppliers and device suppliers, thereby exacerbating the commercial and technical competition of the optical communication industry chain. The optical module is a core component of an optical fiber communication system, and has a great demand for the optical module in the current world, but with the increase of the demand of the optical module, the problems of high manufacturing cost of the existing optical module, high power consumption of the optical module and the like are more and more prominent.
However, currently, due to the limitation of the light emitting sources in the optical module, it becomes difficult to reduce the cost and power consumption of the optical module. Therefore, it becomes very important to select the light emitting source and to increase the light emitting efficiency of the light emitting source to reduce power consumption.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model provides an optical module based on infrared light emitting source, include: the LED light source comprises a ridge-shaped LED light source, a receiver, a synthesis chip, a memory and an optical interface; wherein,
the synthesis chip comprises a driver, an amplifier and a processor, and is respectively connected with the luminous source and the receiver; the light source and the receiver are respectively connected with the optical interface.
In one embodiment of the present invention, the memory is an electrically erasable programmable read-only memory (EEPROM) and is connected to the composite chip via a two-wire serial bus (I2C).
In one embodiment of the present invention, the receiver is electrically connected to the amplifier.
In one embodiment of the present invention, the negative terminal of the light emitting source is connected to the composite chip, and the positive terminal of the light emitting source is connected to the dc power source.
In one embodiment of the invention, a Ge ridge waveguide type infrared LED is provided in the light emitting source.
Compared with the prior art, the utility model discloses following beneficial effect has:
1. the optical module of the infrared luminous source adopts the luminous source with high luminous efficiency, thereby reducing the power consumption of the optical module; meanwhile, the production cost of the luminous source is lower than that of the existing laser light source, namely the production cost of the optical module is reduced.
2. The utility model discloses an optical module of infrared light emitting source because of it has modified Ge ridge waveguide type LED active area for device luminous efficacy promotes.
3. The utility model discloses a ridge type LED has the advantage that Ge epitaxial layer dislocation density is low to further improve infrared emitting diode's luminous efficacy.
Drawings
For the sake of clarity of the description of the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. The drawings in the following description are examples of the present invention, and other drawings may be derived from those drawings by those skilled in the art without inventive effort.
Fig. 1 is a schematic structural diagram of an optical module of an infrared light source according to an embodiment of the present invention;
fig. 2 is a schematic circuit connection diagram of a ridge-shaped LED light source according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a ridge-shaped LED according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
The present invention will be described in further detail with reference to specific examples, but the present invention is not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of an optical module of an infrared light source according to an embodiment of the present invention, where the optical module 1 includes: the ridge-shaped LED luminous source 11, the receiver 12, the synthesizing chip 13, the memory 14 and the optical interface 15; wherein,
the synthesis chip comprises a driver, an amplifier and a processor, and is respectively connected with the luminous source and the receiver; the light source and the receiver are respectively connected with the optical interface.
Preferably, the memory is an EEPROM and is connected to the composite chip by an I2C bus.
Preferably, the driver is electrically connected to the light source, and is configured to drive the light source to emit light and control a voltage of the light source to change a light intensity, so as to convert the data signal into the optical signal.
Furthermore, the synthesis chip is connected with a DATA receiving end DATA through a signal input end, and receives a sending or receiving control instruction and a DATA signal sent by a user. The bias current output end and the modulation current terminal of the synthesis chip are respectively connected with the negative end of the luminous source, and the positive end of the luminous source is connected with the direct current power supply. When a user needs to send data, the driver in the synthesis chip generates a bias current to act on the light-emitting source to drive the light-emitting source to emit light. Meanwhile, a data signal sent by a user is input into the driver, so that a modulation current is generated and modulated onto the bias current, the light intensity of the light source is changed by controlling the conduction degree of the light source, and the data signal is converted into an optical signal.
Preferably, the receiver is electrically connected to an amplifier for converting the received optical signal into an electrical signal for transmission to the amplifier via an output thereof.
Further, in the aspect of receiving the optical signal, the receiver receives the optical signal input through the optical fiber through a photodiode therein, converts the optical signal into an electrical signal, and outputs the electrical signal through an output terminal thereof. After the direct current component in the signal output by the receiver is isolated, the signal is input into an amplifier in a synthesis chip to amplify the amplitude of the received signal and then output to a subsequent circuit.
Further, please refer to fig. 2, fig. 2 is a schematic circuit connection diagram of a ridge-shaped LED light-emitting source according to an embodiment of the present invention, wherein a negative terminal of the light-emitting source is connected to the composite chip, and a positive terminal of the light-emitting source is connected to the dc power supply.
Preferably, a Ge ridge waveguide type infrared LED is provided in the light emission source.
Wherein the Ge ridge waveguide type LED includes: the device comprises an SOI substrate, a modified Ge layer, an intrinsic Ge layer, an N-type Ge region, a P-type Ge region and a passivation layer; wherein,
the modified Ge layer, the intrinsic Ge layer and the passivation layer are sequentially stacked on the SOI substrate;
the N-type Ge region and the P-type Ge region are distributed on two sides of the modified Ge layer and the intrinsic Ge layer.
The N-type Ge region and the P-type Ge region are formed by ion implantation of the modified Ge layer and the intrinsic Ge layer.
Furthermore, the negative electrode is connected with the N-type Ge region, and the positive electrode is connected with the P-type Ge region.
Compared with the optical module in the prior art, the optical module based on the infrared luminous source provided by the embodiment has smaller power consumption and lower cost.
Example two
Referring to fig. 3, fig. 3 is a schematic structural diagram of a ridge-shaped LED according to an embodiment of the present invention. The present embodiment focuses on the structure and process of the ridge-shaped LED based on the above embodiments.
Specifically, the ridge type LED includes:
the SOI substrate comprises an SOI substrate (301), a modified Ge layer (302), an intrinsic Ge layer (303) and a passivation layer (304), wherein the modified Ge layer (302), the intrinsic Ge layer (303) and the passivation layer (304) are sequentially laminated on the SOI substrate (301).
Furthermore, the ridge-shaped LED also comprises an N-type Ge region (305) and a P-type Ge region (306), wherein the N-type Ge region (305) and the P-type Ge region (306) are distributed on two sides of the modified Ge layer (302) and the intrinsic Ge layer (303).
Further, the N-type Ge region (305) and the P-type Ge region (306) are formed by ion implantation of the modified Ge layer (302) and the intrinsic Ge layer (303).
Furthermore, the negative electrode (307) and the positive electrode (308) are further included, the negative electrode (307) is connected with the N-type Ge region (305), and the positive electrode (308) is connected with the P-type Ge region (306).
Specifically, the negative electrode (307) and the positive electrode (308) are both made of Cr-Au alloy.
Further, the modified Ge layer (302) is formed by performing Laser re-crystallization (LRC) process crystallization on the Ge epitaxial layer after the Ge epitaxial layer is grown on the SOI substrate (301) and performing thermal annealing process treatment, wherein Laser wavelength in the LRC process is 808nm, Laser spot size is 10mm multiplied by 1mm, and Laser power is 1.5kW/cm2The laser moving speed was 25 mm/s.
The LRC process is a thermal phase transition crystallization method, the Ge epitaxial layer on the SOI substrate is melted and recrystallized through laser heat treatment, the dislocation defect of the Ge epitaxial layer is transversely released, the Ge epitaxial layer with high quality can be obtained, meanwhile, because the LRC process can accurately control the crystallization area, on one hand, the problem of mutual expansion of Si and Ge between the SOI substrate and the Ge epitaxial layer in the conventional process is avoided, and on the other hand, the material interface characteristic between Si and Ge is good.
Wherein the thickness of the intrinsic Ge layer (303) is 500-550 nm.
Further, the intrinsic Ge layer (303) is a ridge structure, and the thickness of the ridge part is 350nm and the width of the ridge part is 1 μm. The thickness of the ridge part is the height difference between the N-type Ge region and the intrinsic Ge layer.
Further, the P-type Ge region (306) has a doping concentration of 1 × 1019cm-3。
Further, the doping concentration of the N-type Ge region (305) is 1 multiplied by 1019cm-3。
Further, in order to facilitate clearer understanding of the present embodiment, the following detailed description will be given with specific examples taken.
In summary, the principle and the implementation of the optical module based on the infrared light source of the present invention are explained herein by using specific examples, and the above descriptions of the embodiments are only used to help understand the method and the core idea of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the specific implementation and application scope, and in summary, the content of the present specification should not be understood as the limitation of the present invention, and the protection scope of the present invention should be subject to the appended claims.
Claims (5)
1. An optical module based on an infrared light emitting source, comprising: the LED light source comprises a ridge-shaped LED light emitting source (11), a receiver (12), a composite chip (13), a memory (14) and an optical interface (15); wherein,
the synthesis chip 13 comprises a driver, an amplifier and a processor, and is respectively connected with the light emitting source (11) and the receiver (12); the light emitting source (11) and the receiver (12) are respectively connected with the optical interface (15).
2. Optical module according to claim 1, characterized in that said memory (14) is an EEPROM and is connected to said composite chip (13) by an I2C bus.
3. A light module as claimed in claim 1, characterized in that the receiver (12) is electrically connected to the amplifier.
4. The light module according to claim 1, characterized in that the negative terminal of the light emitting source (11) is connected to the composite chip (13) and the positive terminal of the light emitting source (11) is connected to a direct current power supply.
5. A light module as claimed in claim 1, characterized in that a Ge ridge waveguide type infrared LED is provided in the light emitting source (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720546766.9U CN206993123U (en) | 2017-05-17 | 2017-05-17 | Optical module based on infraluminescence source |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720546766.9U CN206993123U (en) | 2017-05-17 | 2017-05-17 | Optical module based on infraluminescence source |
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| CN206993123U true CN206993123U (en) | 2018-02-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107248885A (en) * | 2017-05-17 | 2017-10-13 | 西安科锐盛创新科技有限公司 | Optical module based on infraluminescence source |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107248885A (en) * | 2017-05-17 | 2017-10-13 | 西安科锐盛创新科技有限公司 | Optical module based on infraluminescence source |
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Effective date of registration: 20180606 Address after: 510650 self compiled B building 101, Henggang head 5, Tianhe District, Guangzhou, Guangdong Patentee after: Guangzhou Redong Electronic Technology Co., Ltd. Address before: 710065 Xi'an new hi tech Zone, Shaanxi, No. 86 Gaoxin Road, No. second, 1 units, 22 stories, 12202 rooms, 51, B block. Patentee before: Xi'an CREE Sheng Creative Technology Limited |