CN206992124U - A kind of multijunction solar cell containing embedded aluminum back surface field - Google Patents
A kind of multijunction solar cell containing embedded aluminum back surface field Download PDFInfo
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- CN206992124U CN206992124U CN201720817372.2U CN201720817372U CN206992124U CN 206992124 U CN206992124 U CN 206992124U CN 201720817372 U CN201720817372 U CN 201720817372U CN 206992124 U CN206992124 U CN 206992124U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The utility model discloses a kind of multijunction solar cell containing embedded aluminum back surface field,The sub- battery being arranged in series including a p-substrate and three or more than three,And at least one sub- battery is the sub- batteries of GaInNAs containing embedded aluminum back surface field in all sub- batteries,The sub- batteries of the GaInNAs are included from the bottom to top by the p-type back surface field of layer structure superposition,The GaInNAs bases unintentionally adulterated,N-type launch site,N-type window layer,Containing embedded aluminum back surface field close to p-type back surface field direction in the GaInNAs bases unintentionally adulterated,The embedded aluminum back surface field is the cylindrical-array consistent with p-type back surface field material therefor and doping condition,Few sub- offer potential barrier that the cylindrical-array can not be collected effectively for remote space-charge region,Few son is reflected back space-charge region,So as to improve less sub- collection efficiency,And then improve the photoelectric transformation efficiency of short-circuit current density and multijunction cell.
Description
Technical field
The technical field of solar energy power generating is the utility model is related to, is referred in particular to a kind of containing embedded aluminum back surface field
Multijunction solar cell.
Background technology
Because the Energy distribution of sunshine spectrum is wider, existing any semi-conducting material, which can only all absorb, wherein can
The amount photon higher than its energy gap value.The less photon of energy will transmit through battery by back electrode Metal absorption in sunshine, turn
Become heat energy；And high-energy photon exceeds the excess energy of energy gap, then effect is released by the energy calorimetric of photo-generated carrier and be transmitted to
The lattice atoms of battery material in itself, make material generate heat in itself.These energy can not all be transmitted to load by photo-generated carrier, become
Into effective electric energy.Based on the high-efficiency multi-junction solar cell that III-V compound semiconductor material is prepared be using MBE or
Continuously growth has the sub- battery of p-n junction of different energy gaps to MOCVD technologies, and insert and surpass between each sub- battery from bottom to up
Thin tunnel junctions, allow the most short light of wavelength to be utilized by the wide bandgap material battery of the top, and longer wavelengths of light is transmissive into
Allow and utilized compared with low energy gap width material cell, this is possible to that luminous energy is become into electric energy to greatest extent, and its conversion efficiency is much
Other the various photovoltaic cells being currently known are exceeded.
The method for improving stacked solar cell, cascade solar cell conversion efficiency mainly has two kinds：A kind of is the knot number for increasing sub- battery, as far as possible
Make the sunshine spectrum that every knot battery absorbs close to the spectrum of actual sunshine, so as to increase output voltage；Another method
It is that the output current for making each knot battery reaches matching, and the electric current of current limliting knot is reached highest as far as possible.In recent years, Hen Duoji
Structure is also in the multijunction solar cell of exploitation new structure to improve the currents match between more sub- batteries, raising efficiency.These
The multijunction solar cell of new structure carries out cell band gap again for 880~1800nm wave bands of its electric current unreasonable distribution
Distribution and combination, to be more reasonably utilized long wave band solar spectral, so as to arrive higher photoelectric transformation efficiency.Dilute nitrogen
Compound GaInNAs materials can by controlling the content of In atoms and N atoms in material, can in GaAs or Ge substrates lattice
Epitaxial growth is matched, and realizes energy gap continuously adjustabe between 0.8~1.4eV, is lifting stacked solar cell, cascade solar cell of new generation
One of most potential material of efficiency.Lattice matched materials system solar cell based on dilute nitrogen compound, it is complete that battery can be achieved
The secondary growth of Lattice Matching one of structure, the difficulty and complexity of device technology are reduced while improving solar cell extension tablet quality
Degree.
MOCVD has the advantages of low cost, high yield, is current solar cell epitaxial wafer suitable for large-scale production
The main means of production.However, using MOCVD technologies prepare GaInNAs materials during main problem is that：Due to
GaInNAs needs low-temperature epitaxy just to can guarantee that effectively being incorporated to for N atoms, can introduce substantial amounts of C atoms in material simultaneously,
The defects of excessive in GaInNAs materials and p-type GaInNAs doping problem will cause that the material carrier life-span is shorter, mobility
It is low, the separating capacity of inside battery photo-generated carrier with transport collect greatly restricted, this cause the sub- batteries of GaInNAs into
For the current limliting knot in multijunction cell.Now, if GaInNAs material layers are too thick, effective receipts to photo-generated carrier can not be formed
Collection；Cause battery absorptivity too low if GaInNAs materials are too thin, it is impossible to fully absorb the photon of corresponding wave band.
The content of the invention
The shortcomings that the purpose of this utility model is to overcome prior art and deficiency, there is provided one kind contains embedded back surface field knot
The multijunction solar cell of structure, by introducing embedded aluminum back surface field in the sub- batteries of GaInNAs in thickening, away from space electricity
He Qu base is internally formed potential barrier and produces an auxiliary electric field, few son is reflected back, so as to improve the sub- batteries of GaInNAs
Short-circuit current density.
To achieve the above object, technical scheme provided by the utility model is：It is a kind of containing the more of embedded aluminum back surface field
Joint solar cell, including a p-substrate and three or more than the three sub- batteries being arranged in series, each sub- battery with it is adjacent
Structure keeps Lattice Matching, is connected between each sub- battery with tunnel junctions, and at least one sub- battery in all sub- batteries
For the sub- batteries of GaInNAs containing embedded aluminum back surface field, the sub- batteries of the GaInNAs are included from the bottom to top by layer structure superposition
P-type back surface field, the GaInNAs bases unintentionally adulterated, n-type launch site, n-type window layer, wherein, it is described unintentionally to adulterate
GaInNAs bases are containing embedded aluminum back surface field close to p-type back surface field direction, the embedded aluminum back surface field for p-type back surface field institute
With the consistent cylindrical-array of material and doping condition, the cylindrical-array is away from space-charge region and what can not effectively be collected lack
Son provides potential barrier, few son is reflected back into space-charge region, so as to improve less sub- collection efficiency.
Sub- cell band gap battery than GaInNAs under the sub- batteries of GaInNAs is narrow；The sub- batteries of GaInNAs
On sub- cell band gap battery than GaInNAs it is wide, and require that the band gap of each sub- battery is incremented by successively from top to bottom.
The p-type back surface field, which uses but is not limited to the band gap such as GaInP, AlGaInP, GaAs or AlInP, is higher than GaInNAs materials
The III-V group semi-conductor material of material.
The n-type launch site uses but is not limited to the III-V group semi-conductor materials such as GaAs or GaInNAs.
The band gap of the n-type window layer needs to be higher than GaInNAs materials, using but be not limited to GaInP, AlGaAs or
The III-V group semi-conductor material of the greater band gaps such as AlInP.
The thickness of the p-type back surface field is 100~150nm；The thickness of the GaInNAs bases unintentionally adulterated is 1500
~3000nm；A diameter of 100~the 500nm of cylindrical-array, distance of center circle are 5~10 μm, are highly 1000~1500nm；It is described
N-type launch site thickness is 50~150nm；The thickness of the n-type window is 20~50nm.
The p-substrate is Ge substrates or GaAs substrates.
The utility model compared with prior art, has the following advantages that and beneficial effect：
The utility model produces additional electric field by introducing embedded aluminum back surface field in the sub- batteries of GaInNAs, improves light
The collection efficiency of raw carrier, so as to improve the photoelectric transformation efficiency of short-circuit current density and multijunction cell.
Brief description of the drawings
Fig. 1 is the sub- battery structure schematic diagrames of GaInNAs containing embedded aluminum back surface field.
Fig. 2 is the SiO of patterning2Mask sectional view and top view.
Fig. 3 is the three-joint solar cell structural representation containing embedded aluminum back surface field.
Fig. 4 is the five-junction solar cell structural representation containing embedded aluminum back surface field.
Embodiment
With reference to specific embodiment, the utility model is described in further detail.
Embodiment 1 (three-joint solar cell containing embedded aluminum back surface field)
As shown in figure 3, the three-joint solar cell containing embedded aluminum back surface field described in the present embodiment, includes p-type lining
Bottom 1, can be GaAs substrates or Ge substrates, wherein, on the p-substrate 1, according to stratiform overlaying structure from the bottom to top according to
The secondary sub- batteries 2 of GaInNAs being provided with containing embedded aluminum back surface field, the sub- batteries 3 of GaAs and the sub- batteries 4 of GaInP, each sub- battery it
Between connected by tunnel knot 5, all epitaxial film materials and p-substrate 1 keep Lattice Matching.
Carried on the back as shown in figure 1, the structure of the sub- batteries 2 of the GaInNAs containing embedded aluminum back surface field includes p-type from top to bottom
Field 21, cylindrical-array 22, the GaInNAs bases 23 of unintentional doping, n-type launch site 24 and n-type window layer 25, this contains embedded
The gross thickness of the sub- batteries of GaInNAs of aluminum back surface field is 2000~3000nm, and GaInNAs material band gaps are 1.0eV.
The sub- battery gross thickness of GaAs is 3000~3500nm, and GaAs material band gaps are 1.42eV.
The sub- battery gross thickness of GaInP is 600~800nm, and GaInP material band gaps are 1.9eV.
It is below the specific preparation method of the above-mentioned three-joint solar cell containing embedded aluminum back surface field of the present embodiment, the party
Method specifically includes following steps：
Step 1：A p-substrate is selected, the p-substrate can use Ge substrates or GaAs substrates.
Step 2：Cushion is prepared in the p-substrate using metal-organic chemical vapor deposition equipment technology；
Step 3：GaInNAs battery of the growth containing embedded aluminum back surface field, it is described containing embedded aluminum back surface field
The concrete structure of the sub- batteries of GaInNAs is as shown in Figure 1；
The p-type of the sub- batteries of GaInNAs is grown on the cushion using metal-organic chemical vapor deposition equipment technology
Back surface field, the p-type back surface field, which can use but be not limited to the band gap such as GaInP, AlGaInP, GaAs or AlInP, is higher than GaInNAs materials
III-V group semi-conductor material, the p-type back surface field thickness is 100~150nm, and doping concentration is 1e18~1e19/cm3；
The SiO2 masks of patterning are prepared using the method for electron beam lithography on p-type back surface field, the patterning
The sectional view of SiO2 masks 6 and top view are as shown in Fig. 2 wherein, 22 a diameter of 100~500nm of cylindrical-array, distance of center circle is about 5
~10 μm, be highly 1000~1500nm；
Cylindrical-array is prepared using metal-organic chemical vapor deposition equipment technology, the cylindrical-array is using consistent with back surface field
Material and doping concentration；
SiO2 masks are removed using buffered oxide etch liquid (BOE) selective corrosion；
The GaInNAs bases unintentionally adulterated using metal-organic chemical vapor deposition equipment technology growth, it is described unintentionally
The GaInNAs bases thickness of doping is 1500~3000nm, material band gap 1.0eV；
Using metal-organic chemical vapor deposition equipment technology growth n-type launch site, the n-type launch site can use but unlimited
In III-V group semi-conductor materials such as GaAs or GaInNAs, n-type launch site thickness is 50~150nm, and doping concentration is
5e17~5e18/cm3；
Using metal-organic chemical vapor deposition equipment technology growth n-type window layer, the band gap of the n-type window layer needs height
In GaInNAs materials, it can use but be not limited to the Group III-V semiconductor material of the greater band gaps such as GaInP, AlGaAs or AlInP
Material, the n-type window layer thickness is 20~50nm, doping concentration is 5e17~5e18/cm3；
Step 4：First tunnel knot, institute are prepared in the sub- batteries of GaInNAs using metal-organic chemical vapor deposition equipment technology
The first tunnel knot growth temperature is stated as 500~560 DEG C, the first tunnel knot gross thickness is 25nm；
Step 5：The sub- batteries of GaAs, institute are grown on the first tunnel knot using metal-organic chemical vapor deposition equipment technology
The sub- battery bag back surface fields containing p-type of GaAs, p-type base, n-type launch site, n-type window layer are stated, the sub- battery growth temperatures of GaAs are
600~650 DEG C, gross thickness is 3000~3500nm, and GaAs material band gaps are 1.42eV；
Step 6：Using metal-organic chemical vapor deposition equipment technology on the sub- batteries of GaAs the tunnel knot of growth regulation two, institute
The second tunnel knot growth temperature is stated as 500~560 DEG C, the second tunnel knot gross thickness is 25nm；
Step 7：The sub- batteries of GaInP are grown on the second tunnel knot using metal-organic chemical vapor deposition equipment technology,
The sub- battery growth temperatures of GaInP are 600~650 DEG C, and gross thickness is 600~800nm, and GaInP material band gaps are 1.8eV；
Step 8：Multijunction solar cell containing embedded aluminum back surface field is annealed.
Embodiment 2 (five-junction solar cell containing embedded aluminum back surface field)
As shown in figure 4, the five-junction solar cell containing embedded aluminum back surface field described in the present embodiment, includes p-type Ge
Substrate 01, wherein on the p-type Ge substrate 01, Ge batteries are disposed with from the bottom to top according to stratiform overlaying structure
02nd, the sub- batteries 03 of GaInNAs, the sub- batteries 04 of GaAs, the sub- batteries 05 of AlGaInAs and AlGaInP containing embedded aluminum back surface field
Battery 06, connected by tunnel knot 07 between each sub- battery, all epitaxial film materials keep Lattice Matching with substrate.
The Ge batteries form n-type launch site by the pre- logical phosphine on p-type Ge substrate and growth GaInP nucleating layers
Obtain.
The structure of the sub- batteries of the GaInNAs containing embedded aluminum back surface field includes p-type back surface field, cylindrical array from top to bottom
Row, the GaInNAs bases of unintentional doping, n-type launch site and n-type window layer, this contains GaInNAs of embedded aluminum back surface field
The gross thickness of battery is 2000~3000nm, and GaInNAs material band gaps are 1.0eV.
The sub- battery gross thickness of GaAs is 3000~3500nm, and GaAs material band gaps are 1.42eV.
The sub- battery gross thickness of AlGaInAs is 2000~3000nm, and AlGaInAs material band gaps are 1.72eV.
The sub- battery gross thickness of AlGaInP is 300~600nm, and AlGaInP material band gaps are 2.08~2.18eV.
It is below the specific preparation method of the above-mentioned five-junction solar cell containing embedded aluminum back surface field of the present embodiment, the party
Method specifically includes following steps：
Step 1：A p-substrate is selected, the p-substrate can use Ge substrates or GaAs substrates.
Step 2：One layer of low temperature is grown on the p-substrate using metal-organic chemical vapor deposition equipment technology
GaInP nucleating layers, growth temperature are 500~550 DEG C, thickness 10nm；Low temperature GaInP nucleating layers are used to increase substrate surface
Nucleation density.
Step 3：GaInAs cushions are grown on GaInP nucleating layers using metal-organic chemical vapor deposition equipment technology；
The buffer growth temperature is 600~650 DEG C, and the buffer layer thickness is 500~1000nm, and doping concentration is 5e18~1e19/
cm3；The defects of cushion is used to reduce epitaxial layer density, improves crystal mass.
Step 4：First tunnel knot is prepared on GaInAs cushions using metal-organic chemical vapor deposition equipment technology,
The first tunnel knot growth temperature is 500~560 DEG C, and the first tunnel knot gross thickness is 25nm.
Step 5：Grown using metal-organic chemical vapor deposition equipment technology on the first tunnel knot and contain the embedded back of the body
The sub- batteries of GaInNAs of field structure, concrete structure such as Fig. 1 institutes of the sub- batteries of the GaInNAs containing embedded aluminum back surface field
Show；
The p-type of the sub- batteries of GaInNAs is grown on the cushion using metal-organic chemical vapor deposition equipment technology
Back surface field, the p-type back surface field, which can use but be not limited to the band gap such as GaInP, AlGaInP, GaAs or AlInP, is higher than GaInNAs materials
III-V group semi-conductor material, the p-type back surface field thickness is 100~150nm, and doping concentration is 1e18~1e19/cm3；
The SiO2 masks of patterning are prepared using the method for electron beam lithography on p-type back surface field, the patterning
SiO2 masks sectional view and top view are as shown in Fig. 2 wherein, a diameter of 100~500nm of cylindrical-array, distance of center circle is about 5~10
μm, it is highly 1000~1500nm；
Cylindrical-array is prepared using metal-organic chemical vapor deposition equipment technology, the cylindrical-array is using consistent with back surface field
Material and doping concentration；
SiO2 masks are removed using buffered oxide etch liquid (BOE) selective corrosion；
The GaInNAs bases unintentionally adulterated using metal-organic chemical vapor deposition equipment technology growth, it is described unintentionally
The GaInNAs bases thickness of doping is 1500~3000nm, material band gap 1.0eV；
Using metal-organic chemical vapor deposition equipment technology growth n-type launch site, the n-type launch site can use but unlimited
In III-V group semi-conductor materials such as GaAs or GaInNAs, n-type launch site thickness is 50~150nm, and doping concentration is
5e17~5e18/cm3；
Using metal-organic chemical vapor deposition equipment technology growth n-type window layer, the band gap of the n-type window layer needs height
In GaInNAs materials, it can use but be not limited to the Group III-V semiconductor material of the greater band gaps such as GaInP, AlGaAs or AlInP
Material, the n-type window layer thickness is 20~50nm, doping concentration is 5e17~5e18/cm3；
Step 6：Second tunnel knot, institute are prepared in the sub- batteries of GaInNAs using metal-organic chemical vapor deposition equipment technology
The second tunnel knot growth temperature is stated as 500~560 DEG C, the second tunnel knot gross thickness is 25nm；
Step 7：The sub- batteries of GaAs, institute are grown on the second tunnel knot using metal-organic chemical vapor deposition equipment technology
The sub- battery bag back surface fields containing p-type of GaAs, p-type base, n-type launch site, n-type window layer are stated, the sub- battery growth temperatures of GaAs are
600~650 DEG C, gross thickness is 3000~3500nm, and GaAs material band gaps are 1.42eV；
Step 8：Using metal-organic chemical vapor deposition equipment technology on the sub- batteries of GaAs the tunnel knot of growth regulation three, institute
The 3rd tunnel knot growth temperature is stated as 500~560 DEG C, the 3rd tunnel knot gross thickness is 25nm；
Step 9：AlGaInAs electricity is grown on the 3rd tunnel knot using metal-organic chemical vapor deposition equipment technology
Pond, the sub- battery growth temperatures of AlGaInAs are 650~700 DEG C, and gross thickness is 2000~3000nm, AlGaInAs material strips
Gap is 1.72eV；
Step 10：Using metal-organic chemical vapor deposition equipment technology on the sub- batteries of GaAs the tunnel knot of growth regulation four,
The 4th tunnel knot growth temperature is 500~560 DEG C, and the 4th tunnel knot gross thickness is 25nm；
Step 11：AlGaInP electricity is grown on the 4th tunnel knot using metal-organic chemical vapor deposition equipment technology
Pond, the sub- battery growth temperatures of AlGaInAs are 650~700 DEG C, and gross thickness is 300~600nm, AlGaInP material band gaps
For 2.08~2.18eV.
Step 12：Multijunction solar cell containing embedded aluminum back surface field is annealed.
Embodiment described above is only the preferred embodiment of the utility model, not limits implementation of the present utility model with this
Scope, therefore the change that all shape, principles according to the utility model are made, all should cover in the scope of protection of the utility model.
Claims (6)
- A kind of 1. multijunction solar cell containing embedded aluminum back surface field, it is characterised in that：Including a p-substrate and three Or more than the three sub- batteries being arranged in series, each sub- battery keep Lattice Matching with adjacent structure, tunnelling are used between each sub- battery Knot connection, and at least one sub- battery is the sub- batteries of GaInNAs containing embedded aluminum back surface field in all sub- batteries, should The sub- batteries of GaInNAs are included from the bottom to top by the p-type back surface field of layer structure superposition, the GaInNAs bases unintentionally adulterated, n-type Launch site, n-type window layer, wherein, the GaInNAs bases unintentionally adulterated contain embedded in close p-type back surface field direction Aluminum back surface field, the embedded aluminum back surface field are the cylindrical-array consistent with p-type back surface field material therefor and doping condition, the cylindrical array The few sub- offer potential barrier that can not be effectively collected away from space-charge region is provided, few son is reflected back space-charge region, so as to Improve few sub- collection efficiency.
- A kind of 2. multijunction solar cell containing embedded aluminum back surface field according to claim 1, it is characterised in that：It is described Sub- cell band gap battery than GaInNAs under the sub- batteries of GaInNAs is narrow；Sub- battery on the sub- batteries of GaInNAs Band gap battery than GaInNAs is wide, and requires that the band gap of each sub- battery is incremented by successively from top to bottom.
- A kind of 3. multijunction solar cell containing embedded aluminum back surface field according to claim 1, it is characterised in that：It is described The band gap of p-type back surface field needs to be higher than GaInNAs materials.
- A kind of 4. multijunction solar cell containing embedded aluminum back surface field according to claim 1, it is characterised in that：It is described The band gap of n-type window layer needs to be higher than GaInNAs materials.
- A kind of 5. multijunction solar cell containing embedded aluminum back surface field according to claim 1, it is characterised in that：It is described The thickness of p-type back surface field is 100~150nm；The thickness of the GaInNAs bases unintentionally adulterated is 1500~3000nm；Institute A diameter of 100~the 500nm of cylindrical-array is stated, distance of center circle is 5~10 μm, is highly 1000~1500nm；The n-type launch site is thick Spend for 50~150nm；The thickness of the n-type window is 20~50nm.
- A kind of 6. multijunction solar cell containing embedded aluminum back surface field according to claim 1, it is characterised in that：It is described P-substrate is Ge substrates or GaAs substrates.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107403850A (en) * | 2017-07-07 | 2017-11-28 | 中山德华芯片技术有限公司 | A kind of multijunction solar cell containing embedded aluminum back surface field and preparation method thereof |
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2017
- 2017-07-07 CN CN201720817372.2U patent/CN206992124U/en not_active Withdrawn - After Issue
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107403850A (en) * | 2017-07-07 | 2017-11-28 | 中山德华芯片技术有限公司 | A kind of multijunction solar cell containing embedded aluminum back surface field and preparation method thereof |
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