CN206759336U - SPM and air conditioner - Google Patents
SPM and air conditioner Download PDFInfo
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- CN206759336U CN206759336U CN201720295465.3U CN201720295465U CN206759336U CN 206759336 U CN206759336 U CN 206759336U CN 201720295465 U CN201720295465 U CN 201720295465U CN 206759336 U CN206759336 U CN 206759336U
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Abstract
The utility model discloses a kind of SPM, the module includes：Input pin；Output pin；Inverter circuit, the input of inverter circuit is connected with input pin, the output end of inverter circuit is connected with output pin, inverter circuit includes multiple power switch MOSFET pipes and respectively multiple free wheeling mosfet pipes in parallel corresponding with multiple power switch MOSFET pipes, power switch MOSFET is managed and free wheeling mosfet pipe is MOSFET pipes, and it is alternating current that inverter circuit, which is used for the DC inverter of input pin input,；Driver element, grid of the driver element respectively with multiple power switch MOSFET pipes is connected, driver element is used for the turn-on and turn-off for driving multiple power switch MOSFET pipes, to control inverter circuit to carry out inversion, it is thus possible to which that improves power switch MOSFET pipes opens speed, reduce current noise, reduce power attenuation, improve the applicability of product, especially suitable for super low-power consumption requirement or the electric-control system using high-frequency pulsed width modulation algorithm.The invention also discloses a kind of air conditioner.
Description
Technical field
Technical field of electric appliances is the utility model is related to, more particularly to a kind of SPM and there is the intelligent power
The air conditioner of module.
Background technology
In the related art, SPM integrates power switch MOSFET tube devices and high-voltage driving circuit and set
Put, increasing market won with advantages such as its high integration, high reliability, be particularly suitable for motor frequency converter and
Various inverters.
As shown in figure 1, the SPM in correlation technique, generally by power switch MOSFET tube devices IGBT pipes and
Fast recovery diode FRD as afterflow effect is used cooperatively, in order to reduce damage of the power switch MOSFET tube devices to electric energy
Consumption, it is necessary to improve IGBT pipes open speed and selection the less diode of forward voltage drop.But its problem of existing, is,
The speed of opening of IGBT pipes improves and current noise can be caused to increase, and the forward voltage drop of diode is smaller, and current noise is bigger,
Current noise is excessive easily to be interfered to circuit system, detonator circuit malfunction, or even damage circuit system.
Therefore, correlation technique needs to be improved.
Utility model content
The utility model is intended to one of technical problem at least solving in correlation technique to a certain extent.Therefore, this reality
It is to propose a kind of SPM with low current noise, low-power consumption with a new purpose.
Another purpose of the present utility model is to propose a kind of air conditioner.
To reach above-mentioned purpose, on the one hand a kind of SPM that the utility model proposes, including：Input pin；
Output pin；Inverter circuit, the input of the inverter circuit are connected with the input pin, the output end of the inverter circuit
Be connected with the output pin, the inverter circuit include multiple power switch MOSFET manage and respectively with the multiple power
The corresponding multiple free wheeling mosfet pipes in parallel of MOSFET pipes are switched, the inverter circuit is straight for the input pin to be inputted
It is alternating current to flow electric inversion；Driver element, the driver element grid phase with the multiple power switch MOSFET pipes respectively
Even, the driver element is used for the turn-on and turn-off for driving the multiple power switch MOSFET pipes, to control the inversion electricity
Road carries out inversion.
According to the utility model proposes SPM, inverter circuit include multiple power switch MOSFET manage and
The multiple free wheeling mosfet pipes in parallel with multiple power switch MOSFET pipes respectively, driver element drive multiple power switch
The turn-on and turn-off of MOSFET pipes, to control inverter circuit by the DC inverter that input pin inputs as alternating current.Thus,
The SPM of the utility model embodiment, as power switch and afterflow, can improve power switch using MOSFET pipes
Open speed, reduce current noise, reduce power attenuation, improve the applicability of product.
Specifically, the SPM includes：PFC output pins, the PFC output pins and the input pin
It is connected；PFC input pins；PFC pfc circuit, the input and the PFC of the PFC PFC are defeated
Enter pin to be connected, the output end of the PFC PFC is connected with the PFC output pins, the PFC
Pfc circuit includes PFC power switch MOSFET pipes and PFC free wheeling mosfet pipes, the PFC power switch MOSFET pipes and institute
It is that MOSFET is managed to state PFC free wheeling mosfet pipes, grid and the driver element phase of the PFC power switch MOSFET pipes
Even, wherein, the driver element is used for the turn-on and turn-off for driving the PFC power switch MOSFET pipes, to control the PFC
Circuit carries out PFC.
Preferably, the multiple power switch MOSFET pipes and PFC power switch MOSFET pipes are carborundum
MOSFET is managed, and the multiple free wheeling mosfet pipe and the PFC free wheeling mosfets pipe are that MOSFET pipes are sowed in nitridation.
Further, the input pin includes the first input pin to the 3rd input pin, and the output pin includes
First output pin to the second output pin, the multiple power switch MOSFET pipes include the first MOSFET pipes to the 4th
MOSFET is managed, and the multiple free wheeling mosfet pipe is managed including the 7th MOSFET pipes to the tenth MOSFET, wherein, described first
The drain electrode of MOSFET pipes is connected with first input pin, grid and the driver element phase of the first MOSFET pipes
Even, the drain electrode of the 2nd MOSFET pipes is connected with the source electrode of the first MOSFET pipes and has a first node, and described second
The source electrode of MOSFET pipes is connected with second input pin, grid and the driver element phase of the 2nd MOSFET pipes
Even, wherein, the first node is connected with first output pin；The drain electrode and described first of the 7th MOSFET pipes
The drain electrode of MOSFET pipes is connected, source electrode with the first MOSFET pipes after the source electrodes of the 7th MOSFET pipes is connected with grid
It is connected；The drain electrode of the 8th MOSFET pipes is connected with the drain electrode of the 2nd MOSFET pipes, the source of the 8th MOSFET pipes
Pole is connected after being connected with grid with the source electrode of the 2nd MOSFET pipes；The drain electrode of the 3rd MOSFET pipes and described first defeated
Enter pin to be connected, the grid of the 3rd MOSFET pipes is connected with the driver element, the drain electrode of the 4th MOSFET pipes with
The source electrode of the 3rd MOSFET pipes is connected and has section point, and the source electrode of the 4th MOSFET pipes inputs with the described 3rd
Pin is connected, and the grid of the 4th MOSFET pipes is connected with the driver element, wherein, the section point and described second
Output pin is connected；The drain electrode of the 9th MOSFET pipes is connected with the drain electrode of the 3rd MOSFET pipes, and the described 9th
The source electrode of MOSFET pipes is connected after being connected with grid with the source electrode of the 3rd MOSFET pipes；The drain electrode of the tenth MOSFET pipes
Drain electrode with the 4th MOSFET pipes is connected, the source electrodes of the tenth MOSFET pipes be connected with grid after with the described 4th
The source electrode of MOSFET pipes is connected.
Further, the input pin also includes the 4th input pin, and the output pin also includes the 3rd efferent duct
Pin, the multiple power switch MOSFET pipes are also managed including the 5th MOSFET pipes to the 6th MOSFET, the multiple afterflow
MOSFET pipes are also managed including the 11st MOSFET pipes to the 12nd MOSFET, wherein, the drain electrode of the 5th MOSFET pipes and institute
State the first input pin to be connected, the grid of the 5th MOSFET pipes is connected with the driver element, the 6th MOSFET pipes
Drain electrode be connected with the source electrode of the 5th MOSFET pipes and there is the 3rd node, the source electrode of the 6th MOSFET pipes with it is described
4th input pin is connected, and the grid of the 6th MOSFET pipes is connected with the driver element, wherein, the 3rd node with
3rd output pin is connected；The drain electrode of the 11st MOSFET pipes is connected with the drain electrode of the 5th MOSFET pipes, institute
State the 11st MOSFET pipes source electrode be connected with grid after be connected with the source electrode of the 5th MOSFET pipes；Described 12nd
The drain electrode of MOSFET pipes is connected with the drain electrode of the 6th MOSFET pipes, and the source electrode of the 12nd MOSFET pipes is connected with grid
The source electrode with the 6th MOSFET pipes is connected afterwards.
Specifically, the grid that the driver element passes through the multiple first driving resistance and the multiple power switch MOSFET pipes
It is extremely corresponding to be connected.
Preferably, the span of the multiple first driving resistance can be 0 Ω to 56 Ω.
Further, the PFC output pins include the 4th output pin and the 5th output pin, and the PFC power is opened
Closing MOSFET pipes includes the 13rd MOSFET pipes, and the PFC free wheeling mosfets pipe is managed including the 14th MOSFET, wherein, it is described
The drain electrode of 14th MOSFET pipes is connected with the 4th output pin, the source electrode and grid phase of the 14th MOSFET pipes
Even；The drain electrode of the 13rd MOSFET pipes is connected with the source electrode of the 14th MOSFET pipes and has fourth node, described
The source electrode of 13rd MOSFET pipes is connected with the 5th output pin, grid and the driving of the 13rd MOSFET pipes
Unit is connected, wherein, the fourth node is connected with the PFC input pins.
Specifically, the grid phase that the driver element passes through the second driving resistance and the PFC power switch MOSFET pipes
Even.
Preferably, the span of the second driving resistance can be 0 Ω to 56 Ω.
To reach above-mentioned purpose, on the other hand a kind of air conditioner that the utility model proposes, including described intelligent power
Module.
According to the utility model proposes air conditioner, by above-mentioned SPM, opening for power switch can be improved
Logical speed, reduces current noise, reduces power attenuation, improves the applicability of product.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of the SPM in correlation technique；
Fig. 2 is the block diagram according to the SPM of the utility model one embodiment；
Fig. 3 is the block diagram according to the SPM of the utility model another embodiment；
Fig. 4 is the circuit theory diagrams according to the SPM of one specific embodiment of the utility model；
Fig. 5 a are that SPM in correlation technique opens waveform diagram；And
Fig. 5 b are to open waveform diagram according to the SPM of the utility model embodiment.
Reference：
Input pin IN, output pin OUT, inverter circuit 10 and driver element 20；
Multiple power switch MOSFET pipes 101 and multiple free wheeling mosfet pipes 102；
PFC output pins PO, PFC input pin PI and PFC pfc circuit 30；
PFC power switch MOSFET pipes 301 and PFC free wheeling mosfets pipe 302；
First input pin IN1 to the 4th input pin IN4；First output pin OUT1 to the 3rd output pin OUT3,
4th output pin PO-OUT4 and the 5th output pin PO-OUT5；
First MOSFET pipes MOS1 to the 14th MOSFET pipes MOS14；
First driving resistance R10 and the second driving resistance R20；
First resistor R1 to the 6th resistance R6.
Embodiment
Embodiment of the present utility model is described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning
Same or similar element is represented to same or similar label eventually or there is the element of same or like function.Below by ginseng
The embodiment for examining accompanying drawing description is exemplary, it is intended to for explaining the utility model, and it is not intended that to the utility model
Limitation.
Below with reference to the accompanying drawings describe the SPM of the utility model embodiment and there is the SPM
Air conditioner.
Fig. 2 is the block diagram according to the SPM of the utility model one embodiment.As shown in Fig. 2 should
SPM includes：Input pin IN, output pin OUT, inverter circuit 10 and driver element 20.
Wherein, the input of inverter circuit 10 is connected with input pin IN, the output end and output pin of inverter circuit 10
OUT is connected, and inverter circuit 10 includes multiple power switch MOSFET pipes 101 and managed respectively with multiple power switch MOSFET
101 corresponding multiple free wheeling mosfet pipes 102 in parallel, inverter circuit 10 for being by the input pin IN DC inverters inputted
Alternating current；Grid G of the driver element 20 respectively with multiple power switch MOSFET pipes 101 is connected, and driver element 20 is used to drive
The turn-on and turn-off of multiple power switch MOSFET pipes 101, to control inverter circuit 10 to carry out inversion.
Specifically, in the course of work of SPM, multiple power switch MOSFET pipes 101 are opened as power
Pass turn-on and turn-off, each free wheeling mosfet pipe can manage under the control of driver element 20 in corresponding power switch MOSFET
Afterflow is carried out during shut-off.Thus, because the conduction voltage drop of MOSFET pipes is smaller, and MOSFET pipes are made an uproar as electric current caused by afterflow
Sound Irr is almost nil, therefore can improve the speed of opening of power switch, reduces current noise, reduces power attenuation.
Thus, the power switch MOSFET pipes of the SPM of the utility model embodiment to open speed larger,
Power consumption is relatively low, and current noise is smaller, so as to improve the applicability of SPM, especially suitable for low-power consumption
It is required that the or electric-control system using high-frequency pulsed width modulation algorithm.
Show that SPM includes according to one embodiment of the present utility model, such as Fig. 3：PFC output pins PO, PFC
Input pin PI and PFC pfc circuit 30.
Wherein, PFC output pins PO is connected with input pin IN；The input and PFC of PFC pfc circuit 30
Input pin PI is connected, and the output end of PFC pfc circuit 30 is connected with PFC output pins PO, PFC
Pfc circuit 30 includes PFC power switch MOSFET pipes 301 and PFC free wheeling mosfets pipe 302, PFC power switch MOSFET pipes
301 and PFC free wheeling mosfets pipe 302 is that MOSFET is managed, the grid G and driver element of PFC power switch MOSFET pipes 301
20 are connected, wherein, driver element 20 is used to drive the turn-on and turn-off of PFC power switch MOSFET pipes 301, with control power because
Number correction pfc circuit 30 carries out PFC.
Specifically, in the course of work of SPM, PFC power switch MOSFET pipes 301 are opened as power
Close, PFC free wheeling mosfets pipe 302 is used for afterflow.External power source by PFC input pins PI by direct current be supplied to power because
Number correction pfc circuit 30, driver element 20 outputs control signals to the grid of PFC power switch MOSFET pipes 301, with control
The on or off of PFC power switch MOSFET pipes 301, thus, PFC pfc circuit 30 can be carried out to external power source
Capability correction, and inverter circuit 10 can be supplied to after capability correction.
According to a specific embodiment of the present utility model, multiple power switch MOSFET pipes 101 and PFC power switch
MOSFET pipes 301 can be that carborundum (SiC) MOSFET is managed, and multiple free wheeling mosfet pipe 102 and PFC free wheeling mosfets pipes 302 can
(GaN) MOSFET pipes are sowed for nitridation.
Specifically, the SPM of the utility model embodiment is opened using silicon carbide MOSFET pipe as power
Close, managed using gallium nitride MOSFET for afterflow, to the related skill being used as using IGBT pipes as power switch, using diode
Art is compared, and because silicon carbide MOSFET pipe is smaller than the pressure drop of IGBT pipe, it is smaller than the pressure drop of diode that MOSFET pipes are sowed in nitridation, and
MOSFET pipes are sowed in nitridation can make current noise Irr almost be reduced to zero as afterflow, so as to improve SPM
Open speed, reduce power attenuation.Wherein, the SPM in correlation technique opens waveform diagram such as Fig. 5 a
Shown, the SPM of the present embodiment opens waveform diagram as shown in Figure 5 b, and this is can be seen that from Fig. 5 a and Fig. 5 b
The current noise of the SPM of utility model embodiment is significantly less than the current noise in correlation technique.
In a specific example of the present utility model, multiple power switch MOSFET pipes 101 may make up three-phase (such as U
Phase, V phases and W phases) full bridge inverter, the output end of three-phase full-bridge inverting circuit can be with threephase load by output pin OUT
It is connected, the DC inverter that three-phase full-bridge inverting circuit inputs input pin IN under control of driver element 20 intersects for three
Stream electricity, and three-phase alternating current is supplied to by threephase load such as three phase alternating current motor by output pin OUT.
The SPM of the utility model embodiment is further described by taking three-phase full-bridge inverting circuit as an example below
Circuit structure, operation principle.
According to a specific embodiment of the present utility model, as shown in figure 4, input pin IN includes the first input pin
IN1 to the 3rd input pin IN3, output pin OUT include the first output pin OUT1 to the second output pin OUT2, multiple
Power switch MOSFET pipes 101 include the first MOSFET pipes MOS1 to the 4th MOSFET pipe MOS4, multiple free wheeling mosfet pipes
102 include the 7th MOSFET pipes MOS7 to the tenth MOSFET pipe MOS10, wherein, the first MOSFET pipes MOS1 drain D and first
Input pin IN1 is connected, and the first MOSFET pipes MOS1 grid G is connected with driver element 20, the 2nd MOSFET pipes MOS2 leakage
Pole D is connected with the source S of the first MOSFET pipes and has first node, and the 2nd MOSFET pipes MOS2 source S inputs with second
Pin IN2 is connected, and the 2nd MOSFET pipes MOS2 grid G is connected with driver element 20, wherein, first node and the first efferent duct
Pin OUT1 is connected；7th MOSFET pipes MOS7 drain D is connected with the drain D of the first MOSFET pipes, the 7th MOSFET pipes MOS7
Source S be connected with grid G after be connected with the source S of the first MOSFET pipes；8th MOSFET pipes MOS8 drain D and second
MOSFET pipes MOS2 drain D is connected, and the 8th MOSFET pipes MOS8 source S is connected with grid G manages with the 2nd MOSFET afterwards
MOS2 source S is connected；3rd MOSFET pipes MOS3 drain D is connected with the first input pin IN1, the 3rd MOSFET pipes
MOS3 grid G is connected with driver element 20, the 4th MOSFET pipes MOS4 drain D and the 3rd MOSFET pipes MOS3 source S
It is connected and there is section point, the 4th MOSFET pipes MOS4 source S is connected with the 3rd input pin IN3, the 4th MOSFET pipes
MOS4 grid G is connected with driver element 20, wherein, section point is connected with the second output pin OUT2；9th MOSFET is managed
MOS9 drain D is connected with the 3rd MOSFET pipes MOS3 drain D, the source Ss of the 9th MOSFET pipes be connected with grid G after with
3rd MOSFET pipes MOS3 source S is connected；Tenth MOSFET pipes MOS10 drain D and the 4th MOSFET pipes MOS4 drain electrode
D is connected, and the tenth MOSFET pipes MOS10 source S is connected with grid G to be connected with the 4th MOSFET pipes MOS4 source S afterwards.
According to a specific embodiment of the present utility model, as shown in figure 4, input pin also includes the 4th input pin
IN4, output pin also include the 3rd output pin OUT3, and multiple power switch MOSFET pipes 101 also include the 5th MOSFET and managed
MOS5 also includes the 11st MOSFET pipes MOS11 to the 12nd to the 6th MOSFET pipe MOS6, multiple free wheeling mosfet pipes 102
MOSFET pipe MOS12, wherein, the 5th MOSFET pipes MOS5 drain D is connected with the first input pin IN1, the 5th MOSFET pipes
MOS5 grid G is connected with driver element 20, the 6th MOSFET pipes MOS6 drain D and the 5th MOSFET pipes MOS5 source S
It is connected and there is the 3rd node, the 6th MOSFET pipes MOS6 source S is connected with the 4th input pin IN4, the 6th MOSFET pipes
MOS6 grid G is connected with driver element 20, wherein, the 3rd node is connected with the 3rd output pin OUT3；11st MOSFET
Pipe MOS11 drain D is connected with the 5th MOSFET pipes MOS5 drain D, the 11st MOSFET pipes MOS11 source S and grid
G is connected after being connected with the 5th MOSFET pipes MOS5 source S；12nd MOSFET pipes MOS12 drain D and the 6th MOSFET
Pipe MOS6 drain D is connected, and the 12nd MOSFET pipes MOS12 source S is connected afterwards with grid G with the 6th MOSFET pipes MOS6's
Source S is connected.
According to a specific embodiment of the present utility model, as shown in figure 4, driver element 20 passes through the multiple first driving electricity
Resistance 201 is corresponding with the grid G of multiple power switch MOSFET pipes 101 to be connected.
According to a specific embodiment of the present utility model, the span of multiple first driving resistance 201 can be for 0 Ω extremely
56 Ω。
Specifically, the first input pin IN1 is connected with PFC output pins PO, and the first input pin IN1 can be inversion electricity
The positive pole of the power supply on road 10, the second input pin IN2 to the 4th input pin IN4 can be the power supply of inverter circuit 10
Negative pole, wherein, the second input pin IN2 to the 4th input pin IN4 can be circuit equivalent point, that is, say, the second input pin
IN2 to the 4th input pin IN4 can be the same point on circuit board.OUT3 points of first output pin OUT1 to the 3rd output pin
Not Wei inverter circuit 10 three-phase output end.
More specifically, the first MOSFET pipes MOS1 to the 6th MOSFET pipes MOS6 can be carborundum (SiC) MOSFET
Pipe, and the power switch as SPM, the 7th MOSFET pipes MOS7 to the 12nd MOSFET pipes MOS12 can be nitrogen
(GaN) MOSFET pipes are sowed in change, and are used as afterflow.Multiple first driving resistance 201 may include first resistor R1 to the 6th resistance R6,
Wherein, first resistor R1 one end is connected with driver element 20, the first resistor R1 other end and the first MOSFET pipes MOS1's
Grid G is connected, and second resistance R2 one end is connected with driver element 20, and the second resistance R2 other end and the 2nd MOSFET are managed
MOS2 grid G is connected, and 3rd resistor R3 one end is connected with driver element 20, the 3rd resistor R3 other end and the 3rd
MOSFET pipes MOS3 grid G is connected, and the 4th resistance R4 one end is connected with driver element 20, the 4th resistance R4 other end
It is connected with the 4th MOSFET pipes MOS4 grid G, the 5th resistance R5 one end is connected with driver element 20, and the 5th resistance R5's is another
One end is connected with the 5th MOSFET pipes MOS5 grid G, and the 6th resistance R6 one end is connected with driver element 20, the 6th resistance
The R6 other end is connected with the 6th MOSFET pipes MOS6 grid G, wherein, first resistor R1 to the 6th resistance R6 is used separately as
One MOSFET pipes MOS1 to the 6th MOSFET pipes MOS6 raster data model resistance.
According to a specific embodiment of the present utility model, as shown in figure 4, PFC output pins PO includes the 4th efferent duct
Pin PO-OUT4 and the 5th output pin PO-OUT5, PFC power switch MOSFET pipes 301 are managed including the 13rd MOSFET
MOS13, PFC free wheeling mosfet pipe 302 includes the 14th MOSFET pipe MOS14, wherein, the 14th MOSFET pipes MOS14 leakage
Pole D is connected with the 4th output pin PO-OUT4, and the 14th MOSFET pipes MOS14 source S is connected with grid G；13rd
MOSFET pipes MOS13 drain D is connected with the 14th MOSFET pipes MOS14 source S and has a fourth node, and the 13rd
MOSFET pipes MOS13 source S is connected with the 5th output pin PO-OUT5, the 13rd MOSFET pipes MOS13 grid G and drive
Moving cell 20 is connected, wherein, fourth node is connected with PFC input pins PI.
According to a specific embodiment of the present utility model, as shown in figure 4, driver element 20 passes through the second driving resistance
R20 is connected with the grid G of PFC power switch MOSFET pipes 301.
According to a specific embodiment of the present utility model, the second driving resistance R20 span can be 0 Ω to 56
Ω。
Specifically, the 4th output pin PO-OUT4 is connected with input pin IN, and PFC pfc circuit 30 is logical
The 4th output pin PO-OUT4 is crossed by the direct current electricity output after capability correction to input pin IN, thinks that inverter circuit 10 is powered,
5th output pin PO-OUT5 can be as the negative pole end of direct current.Also, the 13rd MOSFET pipes MOS13 can be carborundum
(SiC) MOSFET is managed, and the PFC power switch as SPM, the 14th MOSFET pipes MOS14 can sow for nitridation
(GaN) MOSFET is managed, and is used as PFC afterflows.
More specifically, in embodiment of the present utility model, driver element 20 outputs control signals to the 13rd MOSFET
Pipe MOS13 grid G, to drive the 13rd MOSFET pipe MOS13 on or off, thus, PFC pfc circuit
30 can carry out capability correction to external power source, and inverter circuit 10 can be supplied to after capability correction.
Further, in the course of work of SPM, driver element 20 outputs control signals to first respectively
MOSFET pipes MOS1 to the 6th MOSFET pipe MOS6, to drive the first MOSFET pipes MOS1 to the 6th MOSFET pipes MOS6 to turn on
Or shut-off.For example, the first MOSFET pipes MOS1 can be U phases on bridge arm, the 2nd MOSFET pipes MOS2 can be U phases under bridge arm, the 3rd
MOSFET pipes MOS3 can be bridge arm in V phases, and the 4th MOSFET pipes MOS4 can be bridge arm under V phases, and the 5th MOSFET pipes MOS5 can be W
Bridge arm in phase, the 6th MOSFET pipes MOS6 can be bridge arm in W phases, when inverter circuit 10 is 180 ° of conductivity type three phase full bridge inversions
During circuit, each power switch MOSFET pipes are that each bridge arm is conductive 180 °, the power switch of two bridge arms above and below same phase
MOSFET pipe alternate conductions, that is, say, if the first MOSFET pipes MOS1 is turned on, the 2nd MOSFET pipes MOS2 shut-offs；If the
Three MOSFET pipes MOS3 are turned on, then the 4th MOSFET pipes MOS4 is turned off；If the 5th MOSFET pipes MOS5 is turned on, the 6th
MOSFET pipes MOS6 is turned off.Also, each mutually to start 120 ° conductive of angle difference, any instant can have three bridge arms while lead
It is logical, and the change of current can be carried out above and below same phase between two bridge arms every time, for example, at a time, the first MOSFET can be driven
Pipe MOS1, the 4th MOSFET pipes MOS4 and the 5th MOSFET pipes MOS5 conductings, and the 2nd MOSFET pipes MOS2, the 3rd MOSFET
Pipe MOS3 and the 6th MOSFET pipes MOS6 shut-offs.So, driver element 20 can drive the first MOSFET pipes according to default rule
MOS1, the 6th MOSFET pipes MOS6, the 3rd MOSFET pipes MOS3, the 2nd MOSFET pipes MOS2, the 5th MOSFET pipes MOS5 and
Four MOSFET pipes MOS4 turn-on and turn-off, so as to which it is straight that driver element 20 controls inverter circuit 10 to input input pin IN
It is three-phase alternating current to flow electric inversion, and the alternating current after inversion is supplied into threephase load (such as three-phase by output pin OUT
Alternating current generator).The specific work process of inverter circuit and three phase full bridge inversion of the prior art in the utility model embodiment
The course of work of circuit is similar, and this is no longer going to repeat them.
According to a specific embodiment of the present utility model, when multiple first driving (examples of resistance 201 of SPM
Such as first resistor R1 to the 6th resistance R6) resistance when being 0 Ω, the second driving resistance R20 resistance can be 0 Ω.
According to another specific embodiment of the present utility model, when multiple first driving resistance 201 of SPM
When the resistance of (such as first resistor R1 to the 6th resistance R6) is 10 Ω, the second driving resistance R20 resistance can be
7.5Ω。
According to another specific embodiment of the present utility model, when multiple first driving resistance 201 of SPM
When the resistance of (such as first resistor R1 to the 6th resistance R6) is 56 Ω, the second driving resistance R20 resistance can be
56Ω。
It should be noted that in the utility model embodiment, multiple first drivings resistance 201 (such as first resistor R1
To the 6th resistance R6) and the second driving resistance R20 from the less resistance of resistance, (such as resistance scope can be 0
Ω to 56 Ω), open speed so as to improve MOSFET pipes.
To sum up, the SPM proposed according to the utility model embodiment, inverter circuit include multiple power switch
MOSFET is managed and multiple free wheeling mosfet pipes in parallel with multiple power switch MOSFET pipes respectively, and driver element driving is more
The turn-on and turn-off of individual power switch MOSFET pipes, to control inverter circuit by the DC inverter that input pin inputs as exchange
Electricity.Thus, the effective rate of doing works of MOSFET are switched MOSFET pipes and afterflow by the SPM of the utility model embodiment
MOSFET is managed, and can improve the speed of opening of power switch, reduces current noise, reduces power attenuation, improves the suitable of product
The property used.
The utility model also proposed a kind of air conditioner, and the air conditioner includes the SPM of above-described embodiment.
To sum up, the air conditioner proposed according to the utility model embodiment, by above-mentioned SPM, can improve work(
Rate switch opens speed, reduces current noise, reduces power attenuation, improves the applicability of product.
In description of the present utility model, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width
Degree ", " thickness ", " on ", " under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outer ", " suitable
The orientation or position relationship of the instruction such as hour hands ", " counterclockwise ", " axial direction ", " radial direction ", " circumference " are based on orientation shown in the drawings
Or position relationship, be for only for ease of description the utility model and simplify and describe, rather than instruction or imply signified device or
Element must have specific orientation, with specific azimuth configuration and operation, therefore it is not intended that to limit of the present utility model
System.
In addition, term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can be expressed or
Implicitly include at least one this feature.In description of the present utility model, " multiple " are meant that at least two, such as two
It is individual, three etc., unless otherwise specifically defined.
In the utility model, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ", " Gu
It is fixed " etc. term should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or integrally；Can be
Mechanically connect or electrically connect；Can be joined directly together, can also be indirectly connected by intermediary, can be two
The connection of element internal or the interaction relationship of two elements, limited unless otherwise clear and definite.For the common skill of this area
For art personnel, concrete meaning of the above-mentioned term in the utility model can be understood as the case may be.
In the utility model, unless otherwise clearly defined and limited, fisrt feature is "above" or "below" second feature
Can be that the first and second features directly contact, or the first and second features pass through intermediary mediate contact.Moreover, first is special
Sign second feature " on ", " top " and " above " can be fisrt feature directly over second feature or oblique upper, or only
Represent that fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " lower section " and " below " can be with
Be fisrt feature immediately below second feature or obliquely downward, or be merely representative of fisrt feature level height and be less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the spy for combining the embodiment or example description
Point is contained at least one embodiment or example of the present utility model.In this manual, to the schematic table of above-mentioned term
State and be necessarily directed to identical embodiment or example.Moreover, specific features, structure, material or the feature of description can be with
Combined in an appropriate manner in any one or more embodiments or example.In addition, in the case of not conflicting, this area
Technical staff the different embodiments or example and the feature of different embodiments or example described in this specification can be entered
Row combines and combination.
Although embodiment of the present utility model has been shown and described above, it is to be understood that above-described embodiment is
Exemplary, it is impossible to it is interpreted as to limitation of the present utility model, one of ordinary skill in the art is in the scope of the utility model
It is interior above-described embodiment to be changed, changed, replaced and modification.
Claims (11)
- A kind of 1. SPM, it is characterised in that including：Input pin；Output pin；Inverter circuit, the input of the inverter circuit are connected with the input pin, the output end of the inverter circuit and institute Output pin is stated to be connected, the inverter circuit include multiple power switch MOSFET manage and respectively with the multiple power switch The corresponding multiple free wheeling mosfet pipes in parallel of MOSFET pipes, the inverter circuit are used for the direct current for inputting the input pin Inversion is alternating current；Driver element, grid of the driver element respectively with the multiple power switch MOSFET pipes are connected, and the driving is single Member is used for the turn-on and turn-off for driving the multiple power switch MOSFET pipes, to control the inverter circuit to carry out inversion.
- 2. SPM according to claim 1, it is characterised in that including：PFC output pins, the PFC output pins are connected with the input pin；PFC input pins；PFC pfc circuit, the input of the PFC PFC is connected with the PFC input pins, described PFC PFC output end is connected with the PFC output pins, and the PFC pfc circuit includes PFC work( Rate switch MOSFET pipes and PFC free wheeling mosfet pipes, grid and the driver element phase of the PFC power switch MOSFET pipes Even, wherein, the driver element is used for the turn-on and turn-off for driving the PFC power switch MOSFET pipes, to control the PFC Circuit carries out PFC.
- 3. SPM according to claim 2, it is characterised in that the multiple power switch MOSFET pipes and institute It is silicon carbide MOSFET pipe, the multiple free wheeling mosfet pipe and the PFC free wheeling mosfets to state PFC power switch MOSFET pipes Manage and sow MOSFET pipes for nitridation.
- 4. SPM according to claim 1, it is characterised in that the input pin includes the first input pin To the 3rd input pin, the output pin includes the first output pin to the second output pin, the multiple power switch MOSFET pipes include the first MOSFET pipes to the 4th MOSFET and managed, the multiple free wheeling mosfet pipe including the 7th MOSFET manage to Tenth MOSFET is managed, wherein,The drain electrode of the first MOSFET pipes is connected with first input pin, the grid of the first MOSFET pipes with it is described Driver element is connected, and the drain electrode of the 2nd MOSFET pipes is connected with the source electrode of the first MOSFET pipes and has a first segment Point, the source electrode of the 2nd MOSFET pipes are connected with second input pin, the grid of the 2nd MOSFET pipes with it is described Driver element is connected, wherein, the first node is connected with first output pin；The drain electrode of the 7th MOSFET pipes is connected with the drain electrode of the first MOSFET pipes, the source electrode of the 7th MOSFET pipes It is connected after being connected with grid with the source electrode of the first MOSFET pipes；The drain electrode of the 8th MOSFET pipes is connected with the drain electrode of the 2nd MOSFET pipes, the source electrode of the 8th MOSFET pipes It is connected after being connected with grid with the source electrode of the 2nd MOSFET pipes；The drain electrode of the 3rd MOSFET pipes is connected with first input pin, the grid of the 3rd MOSFET pipes with it is described Driver element is connected, and the drain electrode of the 4th MOSFET pipes is connected with the source electrode of the 3rd MOSFET pipes and has second to save Point, the source electrode of the 4th MOSFET pipes are connected with the 3rd input pin, the grid of the 4th MOSFET pipes with it is described Driver element is connected, wherein, the section point is connected with second output pin；The drain electrode of the 9th MOSFET pipes is connected with the drain electrode of the 3rd MOSFET pipes, the source electrode of the 9th MOSFET pipes It is connected after being connected with grid with the source electrode of the 3rd MOSFET pipes；The drain electrode of the tenth MOSFET pipes is connected with the drain electrode of the 4th MOSFET pipes, the source electrode of the tenth MOSFET pipes It is connected after being connected with grid with the source electrode of the 4th MOSFET pipes.
- 5. SPM according to claim 4, it is characterised in that the input pin also includes the 4th input pipe Pin, the output pin also include the 3rd output pin, and the multiple power switch MOSFET pipes also include the 5th MOSFET and managed To be managed to the 6th MOSFET, the multiple free wheeling mosfet pipe is also managed including the 11st MOSFET pipes to the 12nd MOSFET, wherein,The drain electrode of the 5th MOSFET pipes is connected with first input pin, the grid of the 5th MOSFET pipes with it is described Driver element is connected, and the drain electrode of the 6th MOSFET pipes is connected with the source electrode of the 5th MOSFET pipes and has Section three Point, the source electrode of the 6th MOSFET pipes are connected with the 4th input pin, the grid of the 6th MOSFET pipes with it is described Driver element is connected, wherein, the 3rd node is connected with the 3rd output pin；The drain electrode of the 11st MOSFET pipes is connected with the drain electrode of the 5th MOSFET pipes, the 11st MOSFET pipes Source electrode is connected after being connected with grid with the source electrode of the 5th MOSFET pipes；The drain electrode of the 12nd MOSFET pipes is connected with the drain electrode of the 6th MOSFET pipes, the 12nd MOSFET pipes Source electrode is connected after being connected with grid with the source electrode of the 6th MOSFET pipes.
- 6. SPM according to claim 5, it is characterised in that the driver element drives by multiple first Resistance is corresponding with the grid of the multiple power switch MOSFET pipes to be connected.
- 7. SPM according to claim 6, it is characterised in that the value model of the multiple first driving resistance Enclose for 0 Ω to 56 Ω.
- 8. SPM according to claim 2, it is characterised in that the PFC output pins include the 4th output Pin and the 5th output pin, the PFC power switch MOSFET pipes include the 13rd MOSFET pipes, the PFC afterflows MOSFET pipes include the 14th MOSFET pipes, wherein,The drain electrode of the 14th MOSFET pipes is connected with the 4th output pin, the source electrode of the 14th MOSFET pipes with Grid is connected；The drain electrode of the 13rd MOSFET pipes is connected with the source electrode of the 14th MOSFET pipes and has fourth node, described The source electrode of 13rd MOSFET pipes is connected with the 5th output pin, grid and the driving of the 13rd MOSFET pipes Unit is connected, wherein, the fourth node is connected with the PFC input pins.
- 9. SPM according to claim 8, it is characterised in that the driver element passes through the second driving resistance It is connected with the grid of the PFC power switch MOSFET pipes.
- 10. SPM according to claim 9, it is characterised in that the span of the second driving resistance For 0 Ω to 56 Ω.
- 11. a kind of air conditioner, it is characterised in that including the SPM according to any one of claim 1-10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720295465.3U CN206759336U (en) | 2017-03-23 | 2017-03-23 | SPM and air conditioner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720295465.3U CN206759336U (en) | 2017-03-23 | 2017-03-23 | SPM and air conditioner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206759336U true CN206759336U (en) | 2017-12-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720295465.3U Active CN206759336U (en) | 2017-03-23 | 2017-03-23 | SPM and air conditioner |
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| Country | Link |
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| CN (1) | CN206759336U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106849729A (en) * | 2017-03-23 | 2017-06-13 | 广东美的制冷设备有限公司 | SPM and air-conditioner |
| CN111342638A (en) * | 2020-04-02 | 2020-06-26 | 广东美的白色家电技术创新中心有限公司 | Power device, bridge arm circuit, power module and electronic equipment |
| WO2024012187A1 (en) * | 2022-07-14 | 2024-01-18 | 佛山市顺德区美的电子科技有限公司 | Pfc circuit, control method for pfc circuit, medium and household appliance |
-
2017
- 2017-03-23 CN CN201720295465.3U patent/CN206759336U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106849729A (en) * | 2017-03-23 | 2017-06-13 | 广东美的制冷设备有限公司 | SPM and air-conditioner |
| CN111342638A (en) * | 2020-04-02 | 2020-06-26 | 广东美的白色家电技术创新中心有限公司 | Power device, bridge arm circuit, power module and electronic equipment |
| WO2024012187A1 (en) * | 2022-07-14 | 2024-01-18 | 佛山市顺德区美的电子科技有限公司 | Pfc circuit, control method for pfc circuit, medium and household appliance |
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| GR01 | Patent grant | ||
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| TR01 | Transfer of patent right |
Effective date of registration: 20230117 Address after: 400064 plant 1, No. 70, Meijia Road, Nan'an District, Chongqing Patentee after: Meiken Semiconductor Technology Co.,Ltd. Address before: 528311 refrigeration complex building, East District, Midea industrial city, Beijiao Town, Shunde District, Foshan City, Guangdong Province Patentee before: GD MIDEA AIR-CONDITIONING EQUIPMENT Co.,Ltd. Patentee before: MIDEA GROUP Co.,Ltd. |
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